CN108336896A - Negative pressure driving circuit - Google Patents
Negative pressure driving circuit Download PDFInfo
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- CN108336896A CN108336896A CN201810272518.9A CN201810272518A CN108336896A CN 108336896 A CN108336896 A CN 108336896A CN 201810272518 A CN201810272518 A CN 201810272518A CN 108336896 A CN108336896 A CN 108336896A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
A kind of negative pressure driving circuit, including：First power switch tube, the second power switch tube, isolation drive transformer, the first driving circuit and the second driving circuit；The primary side winding both ends of isolation drive transformer are respectively connected to the first pwm signal and the second pwm signal with the first pwm signal phase cross-over；First driving circuit, the second driving circuit are used to access the induced voltage of the vice-side winding, to provide the positive driving voltage turned it on to first, second power switch tube and its described first, second power switch tube closed is made to bear driving voltage.Compared to traditional driving circuit; high frequency negative pressure driving energy is enough to rapidly switch off power switch tube during switching disconnection with minus negative pressure; it effectively prevent the secondary conduction problem that the Miller effect is brought; eliminate circuit loss caused by Miller oscillation; the anti-interference of driving circuit is improved, switching device is protected.
Description
Technical field
The invention belongs to power electronics field more particularly to a kind of negative pressure driving circuits.
Background technology
With the rapid development of power electronic technique, power inverter is just sent out towards high power density and efficient direction
Exhibition.With the release of the wide band gap semiconductor device based on third generation semi-conducting material, the working frequency of power inverter and
Conversion efficiency, which is obtained for, to be obviously improved.As the Typical Representative of wide band gap semiconductor device, SiC (Silicon
Carbide, silicon carbide), the devices such as GaN (Gallium Nitride, gallium nitride) there is small conducting resistance and minimum parasitism
Capacitance so that it can be operated at the switching frequency of MHz, to ensure that transducer effciency is comparable, greatly
The volume and weight for reducing passive device improves the power density of converter.
Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal-oxygen
Change layer semiconductcor field effect transistor) belong to voltage-controlled device, when the voltage applied between its grid and source electrode is more than its valve
When threshold voltage, MOSFET will be connected.Since MOSFET is there are miller capacitance, due to the Miller effect when shutdown, drain voltage
Interference voltage will be generated by miller capacitance in grid by flying up, and interference voltage be easy to cause the false triggering of MOSFET, produces
It gives birth to secondary conducting and damages device.
Although traditional complementary drive circuit turn-off circuit impedance is smaller, turn-off speed is very fast, it cannot provide negative pressure
Driving, interference free performance is poor, leads to device failure there are secondary caused by Miller oscillation.
Invention content
The present invention provides a kind of negative pressure driving circuit, and negative pressure drive cannot be provided to solve presence in traditional technical solution
Dynamic, interference free performance is poor, there are problems that secondary caused by Miller oscillation leading to device failure.
A kind of negative pressure driving circuit, including：
First power switch tube, high potential terminate power supply signal；
Second power switch tube, high potential terminate the cold end of first power switch tube, and second power is opened
Close the cold end ground connection of pipe；
Isolation drive transformer has a primary side winding, the first vice-side winding and the second vice-side winding to intercouple,
In, the primary side winding both ends are respectively connected to the first pwm signal and the second pwm signal with the first pwm signal phase cross-over；
First driving circuit, first input end connect the Same Name of Ends of first vice-side winding, and second inputs described in termination
The non-same polarity of first vice-side winding, the first output terminate the control terminal of first power switch tube, and second output terminal meets institute
The cold end of the first power switch tube is stated, first driving circuit is used to access the induced electricity of first vice-side winding
Pressure, to provide the positive driving voltage turned it on to first power switch tube and its described first power closed is made to open
It closes pipe and bears driving voltage；And
Second driving circuit, first input end meet the non-same polarity of second vice-side winding, the second input termination institute
The Same Name of Ends of the second vice-side winding is stated, the first output terminates the control terminal of second power switch tube, and second output terminal is grounded,
Second driving circuit is used to access the induced voltage of second vice-side winding, to be provided to second power switch tube
The positive driving voltage turned it on and the negative driving voltage of described second power switch tube for making it close.
In wherein a kind of embodiment, first driving circuit includes the first rectifier, the first diode, the two or two
Pole pipe, the first Voltage stabilizing module, third power switch tube, first resistor, second resistance, 3rd resistor, the 4th resistance and the 5th electricity
Resistance；
First input end and first vice-side winding of the input terminal of first rectifier as first driving circuit
Same Name of Ends connection, the first resistor is in parallel with first rectifier, the output end of first rectifier and described the
One end of two resistance connects, and the other end of the second resistance is as the first output termination of first driving circuit described the
The control terminal of one power switch tube；The hot end of the third power switch tube connects the second resistance by 3rd resistor
The other end, the control terminal of the third power switch tube connect the output end of first rectifier by the 4th resistance, and described
The control terminal of three power switch tubes also connects the cathode of first diode, and the low potential of the third power switch tube terminates institute
The anode of the first diode and the output end of first Voltage stabilizing module are stated, the cathode of first diode is as described
Second input terminal of one driving circuit is connect with the non-same polarity of first vice-side winding；The anode of second diode connects
The other end of the second resistance, the cathode of second diode connect one end of the 5th resistance, the 5th resistance
The other end connects the cold end of first power switch tube as the second output terminal of first driving circuit, and described first
The input of Voltage stabilizing module terminates the other end of the 5th resistance.
In wherein a kind of embodiment, first Voltage stabilizing module includes the first zener diode and the first capacitance, institute
The anode for stating the first zener diode connects the anode of first diode, and the cathode of first zener diode connects described
The other end of five resistance, first capacitance are in parallel with first zener diode.
In wherein a kind of embodiment, the third power switch tube is metal-oxide-semiconductor or triode.
In wherein a kind of embodiment, first rectifier includes a diode, the input of first rectifier
End and output end are respectively the anode and cathode of diode.
In wherein a kind of embodiment, second driving circuit includes the second rectifier, third diode, the four or two
Pole pipe, the second Voltage stabilizing module, the 4th power switch tube, the 6th resistance, the 7th resistance, the 8th resistance, the 9th resistance and the tenth electricity
Resistance；
First input end and second vice-side winding of the input terminal of second rectifier as second driving circuit
Same Name of Ends connection, the 6th resistance is in parallel with second rectifier, the output end of second rectifier and described the
One end of seven resistance connects, and the other end of the 7th resistance is as the first output termination of second driving circuit described the
The control terminal of two power switch tubes；The hot end of 4th power switch tube connects the 7th resistance by the 8th resistance
The other end, the control terminal of the 4th power switch tube connect the output end of second rectifier by the 9th resistance, and described
The control terminal of four power switch tubes also connects the cathode of the third diode, and the low potential of the 4th power switch tube terminates institute
The anode of third diode and the output end of second Voltage stabilizing module are stated, the cathode of the third diode is as described
Second input terminal of two driving circuits is connect with the Same Name of Ends of second vice-side winding；The anode of 4th diode meets institute
State the other end of the 7th resistance, the cathode of the 4th diode connects one end of the tenth resistance, the tenth resistance it is another
One end connects the cold end of second power switch tube as the second output terminal of second driving circuit, and described second is steady
The input of die block terminates the other end of the tenth resistance.
In wherein a kind of embodiment, second Voltage stabilizing module includes the second zener diode and the second capacitance, institute
The anode for stating the second zener diode connects the input terminal of second rectifier, and the cathode of second zener diode connects described
The other end of tenth resistance, second capacitance are in parallel with second zener diode.
In wherein a kind of embodiment, the 4th power switch tube is metal-oxide-semiconductor or triode.
In wherein a kind of embodiment, second rectifier includes a diode, the input of second rectifier
End and output end are respectively the anode and cathode of diode.
In wherein a kind of embodiment, first power switch tube and the second power switch tube are SiCMOS pipes, GaN
Metal-oxide-semiconductor, IGBT or Si metal-oxide-semiconductors.
Above-mentioned negative pressure driving circuit is compared to traditional driving circuit, the enough processes disconnected in switch of high frequency negative pressure driving energy
In power switch tube rapidly switched off with minus negative pressure, the secondary conduction problem for effectivelying prevent the Miller effect to bring eliminates rice
Circuit loss caused by oscillation is strangled, the anti-interference of driving circuit is improved, protects switching device.
Description of the drawings
Fig. 1 is negative pressure drive circuit schematic diagram in the embodiment of the present invention；
Fig. 2 is the driving course of work schematic diagram of negative pressure driving circuit shown in FIG. 1；
Fig. 3 is the driving Process Simulation oscillogram of negative pressure driving circuit shown in FIG. 1；
Fig. 4 is the driving course of work measured waveform figure of negative pressure driving circuit shown in FIG. 1.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Referring to Fig. 1, the negative pressure driving circuit of wide bandgap semiconductor transistor includes first in present pre-ferred embodiments
Power switch tube Q1, the second power switch tube Q2, isolation drive transformer TR, the first driving circuit 11 and the second driving circuit
12。
The high potential termination power supply signal VBULK of first power switch tube Q1；The cold end of first power switch tube Q1
Connect the second power switch tube Q2 hot ends, the cold end ground connection of the second power switch tube Q2；Isolation drive transformer TR tools
There is the primary side winding TR1, the first vice-side winding TR2 and the second vice-side winding TR3 to intercouple, wherein primary side winding TR1 two
The second pwm signal PWMB that end is respectively connected to the first pwm signal PWMA and interlocks with first pwm signal PWMA phase 180 degrees.
First driving circuit 11, first input end connect the Same Name of Ends of the first vice-side winding TR2, the second input termination first
The non-same polarity of vice-side winding TR2, the control terminal of first the first power switch tube Q1 of output termination, second output terminal connect the first work(
The cold end of rate switching tube Q1, the first driving circuit 11 are used to access the induced voltage of the first vice-side winding TR2, with to first
Power switch tube Q1 provides the positive driving voltage turned it on and its first power switch tube Q1 closed is made to bear driving voltage.
Second driving circuit 12, first input end connect the non-same polarity of the second vice-side winding TR3, the second input termination the
The Same Name of Ends of two vice-side winding TR3, the control terminal of first the second power switch tube Q2 of output termination, second output terminal ground connection, the
Two driving circuits 12 are used to access the induced voltage of the second vice-side winding TR3, to make it lead to the second power switch tube Q2 offers
Logical positive driving voltage and the negative driving voltages of second power switch tube Q2 for making it close.
Compared to traditional driving circuit, high frequency negative pressure driving energy is enough with minus negative pressure during switching disconnection
Power switch tube is rapidly switched off, the secondary conduction problem for effectivelying prevent the Miller effect to bring eliminates circuit caused by Miller oscillation
Loss improves the anti-interference of driving circuit, protects switching device.
In wherein a kind of embodiment, the first power switch tube Q1 and the second power switch tube Q2 are SiCMOS pipes, GaN
Metal-oxide-semiconductor, IGBT or Si metal-oxide-semiconductors.In illustrated embodiment, the first power switch tube Q1 and the second power switch tube Q2 are N-channel
Switching device.
In wherein a kind of embodiment, the first driving circuit 11 includes the first rectifier D0, the first diode D1, second
Diode D2, the first Voltage stabilizing module 111, third power switch tube Q3, first resistor R1, second resistance R2,3rd resistor R3,
Four resistance R4 and the 5th resistance R5；
First input end and first vice-side winding TR2 of the input terminal of first rectifier D0 as the first driving circuit 11
Same Name of Ends connects, and first resistor R1 is in parallel with the first rectifier D0, the output end of the first rectifier D0 and the one of second resistance R2
End connection, the other end of second resistance R2 terminate the control of the first power switch tube Q1 as the first output of the first driving circuit 11
End processed；The hot end of third power switch tube Q3 connects the other end of second resistance R2 by 3rd resistor R3, and third power is opened
The control terminal for closing pipe Q3 connects the output end of the first rectifier D0 by the 4th resistance R4, and the control terminal of third power switch tube Q3 is also
The cathode of the first diode D1 is connect, the low potential of third power switch tube Q3 terminates the anode and first of the first diode D1 surely
The output end of die block 111, the cathode of the first diode D1 is as the second input terminal of the first driving circuit 11 and the first secondary side
The non-same polarity of winding TR2 connects；The anode of second diode D2 connects the other end of second resistance R2, the moon of the second diode D2
Pole connects one end of the 5th resistance R5, and the other end of the 5th resistance R5 connects the first work(as the second output terminal of the first driving circuit 11
The cold end of rate switching tube Q1, the other end of the 5th resistance R5 of input termination of the first Voltage stabilizing module 111.
In wherein a kind of embodiment, the first Voltage stabilizing module 111 includes the first zener diode ZD1 and the first capacitance
C1, the anode of the first zener diode ZD1 connect the anode of the first diode D1, and the cathode of the first zener diode ZD1 connects the 5th
The other end of resistance R5, the first capacitance C1 are in parallel with the first zener diode ZD1.
In wherein a kind of embodiment, third power switch tube Q3 is metal-oxide-semiconductor or triode.In diagram embodiment, the
Three power switch tube Q3 are the N-type metal-oxide-semiconductor of small signal, can also use the switch element of other forms in other embodiments,
As p-type metal-oxide-semiconductor or the triode of NPN/PNP types replace.
In wherein a kind of embodiment, the first rectifier D0 include a diode, the input terminal of the first rectifier D0 and
Output end is respectively the anode and cathode of diode.In other embodiments, the first rectifier D0 can be half bridge rectifier
Or full-bridge rectifier.
In wherein a kind of embodiment, the second driving circuit 12 includes the second rectifier D0 ', third diode D3, the
Four diode D4, the second Voltage stabilizing module 121, the 4th power switch tube Q4, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8,
9th resistance R9 and the tenth resistance R10；
First input end and second vice-side winding TR3 of the input terminal of second rectifier D0 ' as the second driving circuit 12
Same Name of Ends connection, the 6th resistance R6 is in parallel with the second rectifier D0 ', the output end and the 7th resistance R7 of the second rectifier D0 '
One end connection, first the second power switch tube Q2 of output termination of the other end of the 7th resistance R7 as the second driving circuit 12
Control terminal；The hot end of 4th power switch tube Q4 connects the other end of the 7th resistance R7, the 4th work(by the 8th resistance R8
The control terminal of rate switching tube Q4 connects the output end of the second rectifier D0 ', the control of the 4th power switch tube Q4 by the 9th resistance R9
End processed also connects the cathode of third diode D3, the anode of the low potential termination third diode D3 of the 4th power switch tube Q4 and
The output end of second Voltage stabilizing module 121, the cathode of third diode D3 is as the second input terminal of the second driving circuit 12 and
The Same Name of Ends of two vice-side winding TR3 connects；The anode of 4th diode D4 meets the other end of the 7th resistance R7, the 4th diode D4
Cathode connect one end of the tenth resistance R10, the other end of the tenth resistance R10 connects as the second output terminal of the second driving circuit 12
The cold end of second power switch tube Q2, the other end of the tenth resistance R10 of input termination of the second Voltage stabilizing module 121.
In wherein a kind of embodiment, the second Voltage stabilizing module 121 includes the second zener diode ZD2 and the second capacitance
C2, the anode of the second zener diode ZD2 connect the input terminal of the second rectifier D0 ', and the cathode of the second zener diode ZD2 connects
The other end of ten resistance R10, the second capacitance C2 are in parallel with the second zener diode ZD2.
In wherein a kind of embodiment, the 4th power switch tube Q4 is metal-oxide-semiconductor or triode.In diagram embodiment, the
Four power switch tube Q3 are the N-type metal-oxide-semiconductor of small signal, can also use the switch element of other forms in other embodiments,
As p-type metal-oxide-semiconductor or the triode of NPN/PNP types replace.
In wherein a kind of embodiment, the second rectifier D0 ' includes a diode, the input terminal of the second rectifier D0 '
It is respectively the anode and cathode of diode with output end.In other embodiments, the first rectifier D0 can be Half bridge rectifier
Device or full-bridge rectifier.
Referring to Fig. 2, driving course of work schematic diagram, the course of work are divided into the following four stage
Stage 1：First pwm signal PWMA is high level, and the second pwm signal PWMB is low level 0V.The electricity of driving circuit
Stream flow direction is as shown in the arrow in schematic diagram.For the first power switch tube Q1, driving current is from source S by voltage stabilizing in parallel
Pipe ZD1 and capacitance C1, the pressure drop of capacitance both ends are equal to the voltage stabilizing value of voltage-stabiliser tube ZD1, thus provide stable driving negative pressure V_ZD1；
Driving current continues flow through diode D1, and third power switch tube (the small signal metal-oxide-semiconductor of N-channel) Q3 is due to Vgs_Q3=- at this time
0.7V and be closed；Driving current continues flow through the first vice-side winding TR2 of isolation drive transformer TR, diode
D0 drives resistance R2 and reaches the grid G of the first power switch tube Q1.Its driving voltage Vgs_Q1=V_PWMA/N-V_ZD1-
1.4V, the first power switch tube Q1 conductings at this time, wherein N is the turn ratio of isolation drive transformer TR.For the second power switch
The driving voltage of the second vice-side winding TR3 of pipe Q2, isolation drive transformer TR act on the 4th power switch tube, and (N-channel is small
Signal metal-oxide-semiconductor) Q4 grid G and resistance R9, R6 on, Q4 conducting；The gate charge of second power switch tube Q2 is through overdriving
Resistance R8, the 4th power switch tube Q4, voltage-stabiliser tube ZD2 in parallel and capacitance C2 return to source S and are discharged, and driving voltage is
Negative pressure：Vgs_Q2=-V_ZD2 thereby ensures that the reliability of the second power switch tube Q2 shutdowns.
Stage 2：First pwm signal PWMA is that low level 0V, the second pwm signal PWMB are also low level 0V.It drives at this time
The first vice-side winding TR2 of transformer TR and the second vice-side winding TR3 output voltages are 0V, and resistance R1 and R4 become in parallel and close
System, resistance R6 and R9 also become parallel relationship.For the first power switch tube Q1, the charge of grid G by drive resistance R2 with
And R1, R4 in parallel reaches the grid of third power switch tube Q3, and the source S of third power switch tube Q3 is connected to parallel connection
Voltage-stabiliser tube ZD1 and capacitance C1 negative pressure end-V_ZD1, therefore the Q3 conductings of third power switch tube；While the first power switch tube Q1
Gate charge is returned to source S and is discharged by driving resistance R3, MOSFET Q3, voltage-stabiliser tube ZD1 in parallel and capacitance C1,
Driving voltage is negative pressure：Vgs_Q1=-V_ZD1 thereby ensures that the reliability of the first power switch tube Q1 shutdowns.For second
Power switch tube Q2, consistent with the process of the first power switch tube Q1, gate charge is by driving resistance R8, the 4th power to open
It closes pipe Q4, voltage-stabiliser tube ZD2 in parallel and capacitance C2 to return to source S and discharged, driving voltage is also negative pressure：Vgs_Q2=-
V_ZD2 thereby ensures that the reliability of the second power switch tube Q2 shutdowns.The effect of diode D2 and resistance R5 be circuit not
Electrostatic charge being provided to the first power switch tube Q1 when work and discharging access, diode D2 can be with the storage on holding capacitor C1 capacitances
The negative voltage charge deposited is not easy to be released；The effect of diode D4 and resistance R10 are as diode D2 and resistance R5
Effect, the negative voltage for providing the storage on electrostatic charge release access and holding capacitor C2 to the second power switch tube Q2
Charge.
Stage 3：First pwm signal PWMA is low level 0V, and the second pwm signal PWMB is high level.The work in this stage
It is similar to the stage 1 to make process, the second power switch tube Q2 obtain positive driving voltage Vgs_Q2=V_PWMB/N-V_ZD2-1.4V and
Conducting；First power switch tube Q1, which is obtained, to be born driving voltage Vgs_Q1=-V_ZD1 and remains turned-off.
Stage 4：PWMA is that low level 0V, the second pwm signal PWMB are also low level 0V.The course of work in this stage with
Stage 2 is similar, and the first power switch tube Q1 and the second power switch tube Q2 obtain negative driving voltage and keep reliably closing
State.
Referring to Fig. 3, being the simulation waveform of aforementioned four stage work process.In terms of simulation result, meet worked
The analysis of journey describes.Further, referring to Fig. 4, being the Vgs waveforms and Vds waveforms in kind built according to simulation parameter,
It matches with simulation result.
By the aforementioned four stage, the negative of half-bridge topology the first power switch tube Q1 and the second power switch tube Q2 is realized
Voltage drives, and improves anti-interference ability, improves the reliability of system.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (10)
1. a kind of negative pressure driving circuit, which is characterized in that including：
First power switch tube, high potential terminate power supply signal；
Second power switch tube, high potential terminate the cold end of first power switch tube, second power switch tube
Cold end ground connection；
Isolation drive transformer has a primary side winding, the first vice-side winding and the second vice-side winding to intercouple, wherein
The primary side winding both ends are respectively connected to the first pwm signal and the second pwm signal with the first pwm signal phase cross-over；
First driving circuit, first input end connect the Same Name of Ends of first vice-side winding, the second input termination described first
The non-same polarity of vice-side winding, the first output terminate the control terminal of first power switch tube, and second output terminal connects described the
The cold end of one power switch tube, first driving circuit are used to access the induced voltage of first vice-side winding, with
First power switch tube for providing the positive driving voltage turned it on to first power switch tube and it being made to close
Negative driving voltage；And
Second driving circuit, first input end connect the non-same polarity of second vice-side winding, the second input termination described the
The Same Name of Ends of two vice-side windings, the first output terminate the control terminal of second power switch tube, and second output terminal ground connection is described
Second driving circuit is used to access the induced voltage of second vice-side winding, to make it to second power switch tube offer
The positive driving voltage of conducting and the negative driving voltage of described second power switch tube for making it close.
2. negative pressure driving circuit as described in claim 1, which is characterized in that first driving circuit includes the first rectification
Device, the first diode, the second diode, the first Voltage stabilizing module, third power switch tube, first resistor, second resistance, third electricity
Resistance, the 4th resistance and the 5th resistance；
First input end and first vice-side winding of the input terminal of first rectifier as first driving circuit
Same Name of Ends connection, the first resistor is in parallel with first rectifier, the output end of first rectifier and described the
One end of two resistance connects, and the other end of the second resistance is as the first output termination of first driving circuit described the
The control terminal of one power switch tube；The hot end of the third power switch tube connects the second resistance by 3rd resistor
The other end, the control terminal of the third power switch tube connect the output end of first rectifier by the 4th resistance, and described
The control terminal of three power switch tubes also connects the cathode of first diode, and the low potential of the third power switch tube terminates institute
The anode of the first diode and the output end of first Voltage stabilizing module are stated, the cathode of first diode is as described
Second input terminal of one driving circuit is connect with the non-same polarity of first vice-side winding；The anode of second diode connects
The other end of the second resistance, the cathode of second diode connect one end of the 5th resistance, the 5th resistance
The other end connects the cold end of first power switch tube as the second output terminal of first driving circuit, and described first
The input of Voltage stabilizing module terminates the other end of the 5th resistance.
3. negative pressure driving circuit as claimed in claim 2, which is characterized in that first Voltage stabilizing module includes the first voltage stabilizing two
Pole pipe and the first capacitance, the anode of first zener diode connect the anode of first diode, first voltage stabilizing two
The cathode of pole pipe connects the other end of the 5th resistance, and first capacitance is in parallel with first zener diode.
4. negative pressure driving circuit as claimed in claim 2, which is characterized in that the third power switch tube is metal-oxide-semiconductor or three
Pole pipe.
5. negative pressure driving circuit as claimed in claim 2, which is characterized in that first rectifier includes a diode, institute
State the first rectifier input terminal and output end be respectively diode anode and cathode.
6. such as negative pressure driving circuit described in any one of claim 1 to 5, which is characterized in that second driving circuit includes
Second rectifier, third diode, the 4th diode, the second Voltage stabilizing module, the 4th power switch tube, the 6th resistance, the 7th electricity
Resistance, the 8th resistance, the 9th resistance and the tenth resistance；
First input end and second vice-side winding of the input terminal of second rectifier as second driving circuit
Non-same polarity connection, the 6th resistance is in parallel with second rectifier, the output end of second rectifier with it is described
One end of 7th resistance connects, and the other end of the 7th resistance is exported as the first of second driving circuit described in termination
The control terminal of second power switch tube；The hot end of 4th power switch tube connects the 7th resistance by the 8th resistance
The other end, the control terminal of the 4th power switch tube connects the output end of second rectifier by the 9th resistance, described
The control terminal of 4th power switch tube also connects the cathode of the third diode, the low potential termination of the 4th power switch tube
The output end of the anode of the third diode and second Voltage stabilizing module, described in the cathode of the third diode is used as
Second input terminal of the second driving circuit is connect with the Same Name of Ends of second vice-side winding；The anode of 4th diode connects
The cathode of the other end of 7th resistance, the 4th diode connects one end of the tenth resistance, the tenth resistance
The other end connects the cold end of second power switch tube as the second output terminal of second driving circuit, and described second
The input of Voltage stabilizing module terminates the other end of the tenth resistance.
7. negative pressure driving circuit as claimed in claim 6, which is characterized in that second Voltage stabilizing module includes the second voltage stabilizing two
Pole pipe and the second capacitance, the anode of second zener diode connect the input terminal of second rectifier, second voltage stabilizing
The cathode of diode connects the other end of the tenth resistance, and second capacitance is in parallel with second zener diode.
8. negative pressure driving circuit as claimed in claim 6, which is characterized in that the 4th power switch tube is metal-oxide-semiconductor or three
Pole pipe.
9. negative pressure driving circuit as claimed in claim 6, which is characterized in that second rectifier includes a diode, institute
State the second rectifier input terminal and output end be respectively diode anode and cathode.
10. negative pressure driving circuit as described in claim 1, which is characterized in that first power switch tube and the second power
Switching tube is SiC metal-oxide-semiconductors, GaN metal-oxide-semiconductors, IGBT or Si metal-oxide-semiconductors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810272518.9A CN108336896A (en) | 2018-03-29 | 2018-03-29 | Negative pressure driving circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109687693A (en) * | 2018-12-29 | 2019-04-26 | 航天柏克(广东)科技有限公司 | A kind of driver for isolating and high frequency switch power |
| CN109921615A (en) * | 2019-03-15 | 2019-06-21 | 湖北三江航天万峰科技发展有限公司 | Instantaneous negative pressure switch-off power metal-oxide-semiconductor driving circuit and driving method |
| CN110572014A (en) * | 2019-08-29 | 2019-12-13 | 合肥博雷电气有限公司 | MOS tube driving circuit with turn-off negative voltage |
| CN113643882A (en) * | 2021-06-30 | 2021-11-12 | 北京精密机电控制设备研究所 | High-temperature-resistant self-power supply type wide-bandgap power device drive control circuit |
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| US5949273A (en) * | 1996-07-12 | 1999-09-07 | Semikron Elektronik Gmbh | Short circuit protection for parallel connected devices |
| CN203056951U (en) * | 2012-12-28 | 2013-07-10 | 深圳市易能电气技术有限公司 | IGBT driving circuit |
| CN105024530A (en) * | 2015-08-07 | 2015-11-04 | 姚晓武 | Full-bridge soft switching MOS drive circuit |
| CN208094427U (en) * | 2018-03-29 | 2018-11-13 | 钛白金科技（深圳）有限公司 | Negative pressure driving circuit |
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| US5949273A (en) * | 1996-07-12 | 1999-09-07 | Semikron Elektronik Gmbh | Short circuit protection for parallel connected devices |
| CN203056951U (en) * | 2012-12-28 | 2013-07-10 | 深圳市易能电气技术有限公司 | IGBT driving circuit |
| CN105024530A (en) * | 2015-08-07 | 2015-11-04 | 姚晓武 | Full-bridge soft switching MOS drive circuit |
| CN208094427U (en) * | 2018-03-29 | 2018-11-13 | 钛白金科技（深圳）有限公司 | Negative pressure driving circuit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109687693A (en) * | 2018-12-29 | 2019-04-26 | 航天柏克(广东)科技有限公司 | A kind of driver for isolating and high frequency switch power |
| CN109687693B (en) * | 2018-12-29 | 2020-02-07 | 航天柏克(广东)科技有限公司 | Isolation driver and high-frequency switching power supply |
| CN109921615A (en) * | 2019-03-15 | 2019-06-21 | 湖北三江航天万峰科技发展有限公司 | Instantaneous negative pressure switch-off power metal-oxide-semiconductor driving circuit and driving method |
| CN110572014A (en) * | 2019-08-29 | 2019-12-13 | 合肥博雷电气有限公司 | MOS tube driving circuit with turn-off negative voltage |
| CN113643882A (en) * | 2021-06-30 | 2021-11-12 | 北京精密机电控制设备研究所 | High-temperature-resistant self-power supply type wide-bandgap power device drive control circuit |
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