CN107196517A - The drive circuit and driving method of clamp switch in Switching Power Supply - Google Patents
The drive circuit and driving method of clamp switch in Switching Power Supply Download PDFInfo
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- CN107196517A CN107196517A CN201710537192.3A CN201710537192A CN107196517A CN 107196517 A CN107196517 A CN 107196517A CN 201710537192 A CN201710537192 A CN 201710537192A CN 107196517 A CN107196517 A CN 107196517A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
Abstract
The present invention provides a kind of drive circuit of clamp switch in Switching Power Supply, clamp switch uses upper clamp circuit, clamp switch is NMOS tube, including associated drive circuitry and dead zone function circuit, the associated drive circuitry, assists winding NS and electric capacity C1 including transformer, assists winding NS, the generation backward voltage complementary with the PWM drive signal of main switch is added to the grid of clamp switch by electric capacity C1 as the driving voltage of clamp switch, so that when main switch is turned off, control clamp switch is turned on；The dead zone function circuit, the dead time between generation clamp switch and the ON time of main switch, so that before main switch is turned on, control clamp switch is turned off.
Description
Technical field
The present invention relates to a kind of Switching Power Supply, the drive circuit of clamp switch and driving side more particularly in Switching Power Supply
Method, to be driven suitable for the floating of double-switch complementary.Can apply normal shock active clamp topology, flyback active clamp topology,
The clamping switch tube driving of asymmetrical half-bridge topology, asymmetrical half-bridge flyback topologies.
Background technology
With the fast development of semiconductor devices and super large-scale integration, to high current, low-voltage, low cost isolation
The demand of Switching Power Supply is also significantly increased therewith.Normal shock active clamp technology is the patent that VICOR companies invent in nineteen eighty-two, because
There is preferable operating efficiency for it, it is possible to achieve higher power density.By major modular power source manufacturers after patent unblock in 2002
It is widely used.
Normal shock active clamp technology is divided to two kinds of clamp technology and lower clamp technology, and lower clamp technology is mainly used in low defeated
Enter in voltage application scenario, its advantage is that the driving of clamper tube and the driving of supervisor can share reference point, and it has the disadvantage clamper
Switch must use PMOS, and clamp switch and main switch are in parallel, and the voltage stress of clamp switch is higher, due to high pressure
PMOS commercially model be difficult selection, following clamp technology be typically employed in the DC-DC module of low pressure.Upper clamper
Technology can do clamp switch, the primary side winding parallel connection of clamp switch metal-oxide-semiconductor and transformer, clamp switch MOS using NMOS tube
Tube voltage is far below main switch metal-oxide-semiconductor voltage, but it has the disadvantage that the reference point of clamp switch is floating-point, it is necessary to driven using bootstrapping
Dynamic or isolation drive.
Circuit as shown in Figure 1 is a kind of existing upper clamp technology circuit, and its drive scheme is to be controlled by a common PWM
Chip and high pressure bootstrapping driving chip composition, PWM control IC one drive signals of offer of single channel driving are booted to high pressure to be driven
IC, after high pressure bootstrapping driving IC amplifies the signal, formation drives for directly driving main switch Q1 all the way.All the way will in addition
The control of input carries out forming the floating driving in two tunnels after complementary reverse, Bootstrap, for driving clamp switch Q2.All the way driving and
It is common to prevent that dead time is provided between the driving of two tunnels.
The shortcoming of the technical scheme is, general high voltage bootstrapping driving chip expensive using the bootstrapping driving chip of high pressure
Input and output drive signal delay it is very big, much more than 100nS, hiccup formula short-circuit protection in, when limiting work
Between section minimum duty cycle, cause short circuit current protection big, be easily damaged main switch.
Circuit as shown in Figure 2 is a kind of existing lower clamp technology circuit, in the DC-DC module power source of low input
It is relatively common.Its drive scheme is the pwm chip using a specialty.1 road PWM of the professional drive control chip output drives
Dynamic signal direct drive main switch Q1,2 road PWM drive signals of output pass through the negative voltage being made up of electric capacity and diode and generated
Circuit, generates the negative voltage driving signal of a phase shift to drive clamp switch Q2, the advantage of the circuit is that drive circuit compares
Relatively simple, the shortcoming of this technical scheme is can only can be selected using professional control chip, no substitute materials.And it is this special
Expensive, usually more than 5 times of general control chip of the pwm chip of industry.Some inexpensive power source projects are opened
Hope and halt on hair.
The subject matter point of two kinds of synchronous rectification actuation techniques in summary is as shown in following table one.
Table one
| Driving delay | Cost | |
| Clamp technology on Fig. 1 | Greatly | Greatly |
| Clamp technology under Fig. 2 | Greatly |
The content of the invention
To solve the problems of above-mentioned prior art, it is an object of the present invention to provide a kind of circuit structure is simple
And drive the drive circuit of clamp switch in the small Switching Power Supply of delay.
Corresponding to this, it is a further object to provide a kind of switch that circuit structure is simple and driving delay is small electricity
The driving method of clamp switch in source.
In order to realize foregoing invention purpose, the present invention provides a kind of drive circuit of clamp switch in Switching Power Supply, clamper
Switch uses upper clamp circuit, and clamp switch is NMOS tube, including associated drive circuitry and dead zone function circuit, and the auxiliary is driven
Dynamic circuit, includes the assists winding NS and electric capacity C1 of transformer, assists winding NS, and generation and the PWM drive signal of main switch are mutual
The backward voltage of benefit is added to the grid of clamp switch by electric capacity C1 as the driving voltage of clamp switch, to be closed in main switch
When disconnected, control clamp switch conducting；The dead zone function circuit, it is dead between generation clamp switch and the ON time of main switch
Area's time, so that before main switch is turned on, control clamp switch is turned off.
It is preferred that, the assists winding NS of associated drive circuitry different name end is connected to electric capacity C1 one end, electric capacity C1
The other end be connected to clamp switch Q3 grid；Assists winding NS Same Name of Ends be connected respectively to clamp switch Q3 source electrode and
Main switch Q4 drain electrode；The dead zone function circuit, including metal-oxide-semiconductor Q2, electric capacity C2, resistance R2, diode D2, the one of resistance R2
End and diode D2 negative electrode connection be followed by associated drive circuitry assists winding NS different name end, the resistance R2 other end and
Diode D2 anode connection is followed by metal-oxide-semiconductor Q2 grid；Electric capacity C2 one end is connected to metal-oxide-semiconductor Q2 grid, electric capacity C2
The other end be connected to metal-oxide-semiconductor Q2 source electrode；Metal-oxide-semiconductor Q2 drain electrode is connected to clamp switch Q3 grid；Metal-oxide-semiconductor Q2 source electrode
It is also connected to main switch Q4 drain electrode.
It is preferred that, the associated drive circuitry, in addition to resistance R1, resistance R1 be connected on assists winding NS different name end with
Between electric capacity C1, the dead time formed between clamp switch Q3 and main switch Q4 turn-off time, to be turned off in main switch Q4
Afterwards, clamp switch Q3 Delayed conductings are made.
The present invention also provides a kind of drive circuit of clamp switch in Switching Power Supply, and clamp switch uses upper clamp circuit,
Including associated drive circuitry and dead zone function circuit, the assists winding NS and electric capacity of the associated drive circuitry, including transformer
C1, assists winding NS different name end is connected to electric capacity C1 one end, and the electric capacity C1 other end is connected to clamp switch Q3 grid；
Assists winding NS Same Name of Ends is connected respectively to the drain electrode of clamp switch Q3 source electrode and main switch Q4；The dead zone function electricity
After road, including metal-oxide-semiconductor Q2, electric capacity C2, resistance R2, diode D2, resistance R2 one end and diode D2 negative electrode connection, it is connected to
The assists winding NS of associated drive circuitry different name end, the anode connection of resistance the R2 other end and diode D2 is followed by MOS
Pipe Q2 grid；Electric capacity C2 one end is connected to metal-oxide-semiconductor Q2 grid, and the electric capacity C2 other end is connected to metal-oxide-semiconductor Q2 source electrode；
Metal-oxide-semiconductor Q2 drain electrode is connected to clamp switch Q3 grid；Metal-oxide-semiconductor Q2 source electrode is also connected to main switch Q4 drain electrode.
It is preferred that, the associated drive circuitry, in addition to resistance R1, resistance R1 be connected on assists winding NS different name end with
Between electric capacity C1, the dead time formed between clamp switch Q3 and main switch Q4 turn-off time, to be turned off in main switch Q4
Afterwards, clamp switch Q3 Delayed conductings are made.
The present invention separately provides a kind of driving method of clamp switch in Switching Power Supply, and clamp switch uses upper clamp circuit,
Step is as follows：Auxiliary Drive Signal produces step, mutual by the assists winding generation and the PWM drive signal of main switch of transformer
The backward voltage of benefit and is added to by electric capacity the grid of clamp switch as the driving voltage of clamp switch, to be closed in main switch
When disconnected, control clamp switch conducting；First dead zone control step, it is dead between generation clamp switch and the ON time of main switch
Area's time, so that before main switch is turned on, control clamp switch is turned off.
It is preferred that, before Auxiliary Drive Signal produces step, in addition to the second dead zone control step, pass through resistance and pincers
The gate-source interpolar junction capacity Cgs composition RC networks of bit switch, the dead band between generation clamp switch and the turn-off time of main switch
Time, after main switch is turned off, to make clamp switch Delayed conducting.
The present invention provides a kind of drive circuit of clamp switch in Switching Power Supply, including clamper drive circuit 1, dead band control again
Circuit 2 processed.A kind of drive circuit 1 of described clamp switch, the drive circuit 1 produces a clamp switch drive signal, described
Clamp switch drive signal it is characterized in that it forms complementation with main path switch PWM drive signal, and possesses dead time.Institute
The another feature for the clamp switch drive signal stated is that, to float drive signal, its reference point is clamp switch MOS source electrode.
Described clamper drive circuit 1 includes a transformer assists winding NS and driving electric capacity C1, transformer assists winding
NS Same Name of Ends is connected to main switch metal-oxide-semiconductor Q4 drain electrode, and assists winding NS different name end is connected to driving electric capacity C1 one end,
The driving electric capacity C1 other end is connected to the clamp switch metal-oxide-semiconductor Q3 of normal shock active clamp grid.
Described dead zone function circuit 2 includes switch metal-oxide-semiconductor Q2, electric capacity C2, resistance R2, diode D2.The one of resistance R2
After end and diode D2 negative electrode connection, the assists winding NS of the clamper drive circuit 1 different name end is connected to, resistance R2's is another
One end and diode D2 anode connection are followed by controlling switch metal-oxide-semiconductor Q2 grid.Electric capacity C2 one end is connected to switch
On metal-oxide-semiconductor Q2 grid, the other end is connected on switch metal-oxide-semiconductor Q2 source electrodes.The Q2 drain electrodes of switch metal-oxide-semiconductor are connected to clamp switch Q3
Grid, switch metal-oxide-semiconductor Q2 source electrodes be connected in main switch Q4 drain electrode.
When the main switch Q4 drive levels are converted into low level by high level, when main switch Q4 is turned off, become
The main winding NP voltage reversals of depressor, different name terminal voltage is high, terminal voltage of the same name is low.Assists winding NS's is also that different name terminal voltage is high
Same Name of Ends is low.Positive drive level is by driving electric capacity C1 to be added on clamp switch Q3 grid, clamp switch metal-oxide-semiconductor Q3 quilts
Driving conducting, the main winding NP of transformer carries out degaussing.
When the described assists winding NS high Same Name of Ends of different name terminal voltage is low, the resistance R2 of described dead zone function circuit 2
Charged to electric capacity C2, when level reaches that switching tube metal-oxide-semiconductor Q2 drives threshold values on C2, switching tube metal-oxide-semiconductor Q2 is switched on,
Described clamp switch metal-oxide-semiconductor Q3 gate drive level is pulled low, and clamp switch metal-oxide-semiconductor Q3 is turned off in advance, thus shape
Dead band between main switch Q4 and clamp switch metal-oxide-semiconductor Q3.
Described transformer assists winding NS, is the winding on the main transformer T1 of normal shock active clamp topology.Itself and
The phase relation of main winding is as shown in Figure 3.
Described switch metal-oxide-semiconductor Q2, which does not limit to, is limited to metal-oxide-semiconductor, can be the controllable crystal switch of other forms.
The drive circuit of the clamp switch of the present invention has advantages below compared with the BACKGROUNDCircuit shown in Fig. 1,
1st, extra bootstrapping driving chip is not needed, circuit is simple, small volume.
2nd, main switch drive signal is no-delay, and short-circuit protection reliability is high.
3rd, pwm chip highly versatile, is easier to realize that the chip of multi-brand polytypic is substituted.
Brief description of the drawings
Fig. 1 is the existing upper clamp technology circuit of normal shock active clamp；
Fig. 2 is the existing lower clamp technology circuit of normal shock active clamp；
Fig. 3 for the embodiment of the present invention one Switching Power Supply in clamp switch drive circuit circuit theory diagrams；
Fig. 4 for the embodiment of the present invention one Switching Power Supply in clamp switch drive circuit in each switching tube drive waveforms
Figure；
Fig. 5 for the embodiment of the present invention two Switching Power Supply in clamp switch drive circuit circuit theory diagrams；
Fig. 6 for the embodiment of the present invention two Switching Power Supply in clamp switch drive circuit in each switching tube drive waveforms
Figure；
Fig. 7 is the description of symbols in the Figure of description of the present invention.
Embodiment
For a better understanding of the present invention relative to the improvement made by prior art, specific real to of the invention two kinds
Before the mode of applying is described in detail, first present inventive concept combination accompanying drawing is illustrated.
As shown in figure 3, a kind of drive circuit of Switching Power Supply clamp switch, using the backward voltage of transformer assists winding
The driving voltage of clamp switch metal-oxide-semiconductor is done, increases by a dead zone function circuit to produce a dead band control logic signal, described is dead
Area's control circuit 2 exports a control logic signal, allows clamp switch metal-oxide-semiconductor to turn off in advance.Allow the master of normal shock active clamp circuit
The conducting for switching metal-oxide-semiconductor and clamp switch metal-oxide-semiconductor produces a dead time.Described dead time typically refers to two in this area
It is individual to switch the time zone being all not turned on.
Embodiment one
Fig. 3 shows the drive circuit of the Switching Power Supply clamp switch of the embodiment of the present invention one, described clamp switch
Drive circuit includes clamper drive circuit 1, dead zone function circuit 2.
The clamper drive circuit 1 produces the drive signal of a clamp switch, the drive signal feature of clamp switch be it with
Main switch PWM drive signal forms complementation, and possesses dead time.Another feature of the drive signal of described clamp switch
It is that, to float drive signal, its reference point is clamp switch MOS source electrode.
Described clamper drive circuit 1 includes a transformer assists winding NS and driving electric capacity C1, transformer assists winding
NS Same Name of Ends is connected respectively to the drain electrode of clamp switch Q3 source electrode and main switch Q4, and assists winding NS different name end is connected to
Electric capacity C1 one end is driven, the driving electric capacity C1 other end is connected to the clamp switch metal-oxide-semiconductor Q3 of normal shock active clamp grid.
Therefore, clamper drive circuit 1 is alternatively referred to as associated drive circuitry.Wherein, clamp switch metal-oxide-semiconductor Q3 may be simply referred to as clamp switch
Q3, is NMOS tube.Main switch metal-oxide-semiconductor Q4 may be simply referred to as main switch Q4, be NMOS tube.
Described dead zone function circuit 2 includes switch metal-oxide-semiconductor Q2, electric capacity C2, resistance R2, diode D2.The one of resistance R2
After end and diode D2 negative electrode connection, the assists winding NS of the clamper drive circuit 1 different name end is connected to, resistance R2's is another
One end and diode D2 anode connection are followed by controlling switch metal-oxide-semiconductor Q2 grid.Electric capacity C2 one end is connected to switch
On metal-oxide-semiconductor Q2 grid, the electric capacity C2 other end is connected on switch metal-oxide-semiconductor Q2 source electrode.Switch metal-oxide-semiconductor Q2 drain electrode connection
To clamp switch Q3 grid, switch metal-oxide-semiconductor Q2 source electrode is connected in main switch Q4 drain electrode.
Fig. 4 shows that the embodiment of the present invention one respectively switchs the drive waveforms of metal-oxide-semiconductor, and clamp switch metal-oxide-semiconductor Q3 and master open
Close metal-oxide-semiconductor Q4 ON time and the dead time TD between them.Wherein, VGS1 is the dutycycle waveform of PWM in IC1, i.e.,
It is the main switch Q4 of IC1 outputs PWM drive signal.VGS2 is switching tube Q2 drive waveforms.VGS3 is clamp switch Q3
Drive waveforms, the drive waveforms and main switch Q4 PWM drive signal form complementation, and possess dead time TD.This hair
Bright formed main switch metal-oxide-semiconductor drive waveforms and clamper metal-oxide-semiconductor drive waveforms, without the delay in generation time, short circuit is protected
Protect reliability high.
When main switch Q4 drive levels are converted into low level by high level, when main switch Q4 is turned off, transformation
The main winding NP voltage reversals of device, different name terminal voltage is high, terminal voltage of the same name is low.Assists winding NS's is also that different name terminal voltage is high same
Name end is low.Positive drive level is by driving electric capacity C1 to be added on clamp switch Q3 grid, and clamp switch metal-oxide-semiconductor Q3 is driven
Dynamic conducting, the main winding NP of transformer carries out degaussing.This circuit provides driving due to using assists winding NS for clamp switch Q3
Signal, it is not necessary to extra bootstrapping driving chip, circuit is simple, small volume.
When the described assists winding NS high Same Name of Ends of different name terminal voltage is low, the resistance R2 of described dead zone function circuit 2
Charged to electric capacity C2, when level reaches that switching tube metal-oxide-semiconductor Q2 drives threshold values on electric capacity C2, switching tube metal-oxide-semiconductor Q2 is led
Logical, described clamp switch metal-oxide-semiconductor Q3 gate drive level is pulled low, and clamp switch metal-oxide-semiconductor Q3 is turned off in advance, thus
Form the dead band between main switch Q4 and clamp switch metal-oxide-semiconductor Q3.
Drive signal all the way is converted into two-way complementation and floated all the way to drive because the drive circuit of the present invention is realized
The drive signal of dead time can be produced between dynamic, two-way drive signal, can be directly from general in the selection of control chip
The property low single channel control chip of strong, cost.
Embodiment two
Fig. 5 shows the drive circuit of the Switching Power Supply clamp switch of the embodiment of the present invention two, itself and case study on implementation one
Difference is to increase by a resistance R1 in clamper drive circuit 1, and annexation is connected to assists winding NS's for resistance R1 one end
Different name end, the resistance R1 other end is connected to driving electric capacity C1 one end, and other annexations keep constant.
Present case increased resistance R1 and clamp switch metal-oxide-semiconductor Q3 gate-to-source junction capacity Cgs composition RC network,
When assists winding NS different name terminal voltage is timing, driving threshold values is reached after clamp switch metal-oxide-semiconductor Q3 grid voltage GS3 delays
Voltage, clamp switch metal-oxide-semiconductor Q3 is delayed by conducting.The course of work afterwards is consistent with case study on implementation one.
Fig. 6 shows that the embodiment of the present invention two respectively switchs the drive waveforms of metal-oxide-semiconductor, and clamp switch metal-oxide-semiconductor and main switch
The ON time of metal-oxide-semiconductor and two dead times between them, that is, when being created on clamp switch Q3 and main switch Q4 shut-off
Between between dead time TD1, generation clamp switch Q3 and main switch Q4 ON time between dead time TD2.Its
In, VGS1 is the dutycycle waveform of PWM in IC1, and VGS2 is switching tube Q2 drive waveforms, and VGS3 is clamp switch Q3 driving
Waveform.
The drive circuit of clamp switch in Switching Power Supply of the present invention, with the floating ground driving principle of double-switch complementary, without
The complementary circuit such as bootstrapping driving or isolation drive, eliminates the design limit of the existing control IC performance indications such as bootstrapping driving chip
System, makes the drive circuit of clamp switch design more flexible.And the drive circuit does not choose circuit topology, may be applied not only in normal shock has
Source clamper topology, knowable to the floating ground driving principle based on double-switch complementary, the drive circuit of clamp switch of the invention can be with
Apply flyback active clamp topology, asymmetrical half-bridge topology, the clamp switch of asymmetrical half-bridge flyback topologies driving, equally
Without complementary circuits such as additional bootstrapping driving or isolation drives.
Claims (7)
1. a kind of drive circuit of clamp switch in Switching Power Supply, clamp switch uses upper clamp circuit, clamp switch is NMOS
Pipe, it is characterised in that：Including associated drive circuitry and dead zone function circuit,
The associated drive circuitry, includes the assists winding NS and electric capacity C1 of transformer, assists winding NS, generation and main switch
The complementary backward voltage of PWM drive signal is added to the grid of clamp switch by electric capacity C1 as the driving voltage of clamp switch,
So that when main switch is turned off, control clamp switch is turned on；
The dead zone function circuit, the dead time between generation clamp switch and the ON time of main switch, with main switch
Before conducting, control clamp switch shut-off.
2. the drive circuit of clamp switch in Switching Power Supply according to claim 1, it is characterised in that：
The assists winding NS of associated drive circuitry different name end is connected to electric capacity C1 one end, electric capacity C1 other end connection
To clamp switch Q3 grid；Assists winding NS Same Name of Ends is connected respectively to the leakage of clamp switch Q3 source electrode and main switch Q4
Pole；
The dead zone function circuit, including metal-oxide-semiconductor Q2, electric capacity C2, resistance R2, diode D2, resistance R2 one end and diode
D2 negative electrode connection is followed by the assists winding NS of associated drive circuitry different name end, the resistance R2 other end and diode D2's
Anode connects the grid for being followed by metal-oxide-semiconductor Q2；Electric capacity C2 one end is connected to metal-oxide-semiconductor Q2 grid, and the electric capacity C2 other end connects
It is connected to metal-oxide-semiconductor Q2 source electrode；Metal-oxide-semiconductor Q2 drain electrode is connected to clamp switch Q3 grid；Metal-oxide-semiconductor Q2 source electrode is also connected to master
Switch Q4 drain electrode.
3. the drive circuit of clamp switch in Switching Power Supply according to claim 1 or 2, it is characterised in that：The auxiliary
Drive circuit, in addition to resistance R1, resistance R1 are connected between assists winding NS different name end and electric capacity C1, form clamp switch
Dead time between Q3 and main switch Q4 turn-off time, after main switch Q4 shut-offs, to make clamp switch Q3 Delayed conductings.
4. a kind of drive circuit of clamp switch in Switching Power Supply, clamp switch uses upper clamp circuit, it is characterised in that：Including
Associated drive circuitry and dead zone function circuit,
The associated drive circuitry, includes the assists winding NS and electric capacity C1 of transformer, and assists winding NS different name end is connected to
Electric capacity C1 one end, the electric capacity C1 other end is connected to clamp switch Q3 grid；Assists winding NS Same Name of Ends is connected respectively
To the drain electrode of clamp switch Q3 source electrode and main switch Q4；
The dead zone function circuit, including metal-oxide-semiconductor Q2, electric capacity C2, resistance R2, diode D2, resistance R2 one end and diode
After D2 negative electrode connection, the assists winding NS of associated drive circuitry different name end, resistance the R2 other end and diode D2 are connected to
Anode connection be followed by metal-oxide-semiconductor Q2 grid；Electric capacity C2 one end is connected to metal-oxide-semiconductor Q2 grid, the electric capacity C2 other end
It is connected to metal-oxide-semiconductor Q2 source electrode；Metal-oxide-semiconductor Q2 drain electrode is connected to clamp switch Q3 grid；Metal-oxide-semiconductor Q2 source electrode is also connected to
Main switch Q4 drain electrode.
5. the drive circuit of clamp switch in Switching Power Supply according to claim 4, it is characterised in that：The process auxiliary drive
Circuit, in addition to resistance R1, resistance R1 are connected between assists winding NS different name end and electric capacity C1, formed clamp switch Q3 with
Dead time between main switch Q4 turn-off time, after main switch Q4 shut-offs, to make clamp switch Q3 Delayed conductings.
6. a kind of driving method of clamp switch in Switching Power Supply, clamp switch uses upper clamp circuit, step is as follows：
Auxiliary Drive Signal produces step, complementary by the assists winding generation of transformer and the PWM drive signal of main switch
Backward voltage and is added to by electric capacity the grid of clamp switch as the driving voltage of clamp switch, with when main switch is turned off,
Control clamp switch conducting；
First dead zone control step, the dead time between generation clamp switch and the ON time of main switch, with main switch
Before conducting, control clamp switch shut-off.
7. the driving method of clamp switch in Switching Power Supply according to claim 6, it is characterised in that：In process auxiliary drive letter
Number produce before step, in addition to the second dead zone control step passes through resistance and the gate-source interpolar junction capacity Cgs of clamp switch
Constitute RC network, the dead time between generation clamp switch and the turn-off time of main switch, after main switch is turned off, to make pincers
Bit switch Delayed conducting.
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| CN201710537192.3A CN107196517B (en) | 2017-07-04 | 2017-07-04 | The driving circuit of clamp switch in Switching Power Supply |
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| US11936287B2 (en) | 2022-03-08 | 2024-03-19 | Minmax Technology Co., Ltd. | Self-driven active clamp circuit |
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| EP4243270A1 (en) * | 2022-03-09 | 2023-09-13 | Minmax Technology Co., Ltd. | Multi-mode hybrid control dc-dc converting circuit and control method thereof |
| EP4243262A1 (en) * | 2022-03-09 | 2023-09-13 | Minmax Technology Co., Ltd. | Self-driven active clamp circuit |
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| US20230291317A1 (en) * | 2022-03-08 | 2023-09-14 | Minmax Technology Co., Ltd. | Multi-mode hybrid control dc-dc converting circuit and control method thereof |
| US11936287B2 (en) | 2022-03-08 | 2024-03-19 | Minmax Technology Co., Ltd. | Self-driven active clamp circuit |
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