CN107196517B - The driving circuit of clamp switch in Switching Power Supply - Google Patents
The driving circuit of clamp switch in Switching Power Supply Download PDFInfo
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- CN107196517B CN107196517B CN201710537192.3A CN201710537192A CN107196517B CN 107196517 B CN107196517 B CN 107196517B CN 201710537192 A CN201710537192 A CN 201710537192A CN 107196517 B CN107196517 B CN 107196517B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
Abstract
The present invention provides a kind of driving circuit of clamp switch in Switching Power Supply, clamp switch uses upper clamp circuit, clamp switch is NMOS tube, including associated drive circuitry and dead zone function circuit, the associated drive circuitry, auxiliary winding NS and capacitor C1 including transformer, auxiliary winding NS generates the backward voltage complementary with the PWM drive signal of main switch as the driving voltage of clamp switch, the grid of clamp switch is added to by capacitor C1, with when main switch turns off, control clamp switch is connected；The dead zone function circuit generates the dead time between clamp switch and the turn-on time of main switch, with before main switch is connected, control clamp switch is turned off.
Description
Technical field
The present invention relates to a kind of Switching Power Supplies, in particular to the driving circuit of clamp switch and driving side in Switching Power Supply
Method, to be suitable for driving for double-switch complementary floatingly.Can apply normal shock active clamp topology, flyback active clamp topology,
The clamping switch tube driving of asymmetrical half-bridge topology, asymmetrical half-bridge flyback topologies.
Background technique
With the fast development of semiconductor devices and super large-scale integration, to high current, low-voltage, low cost isolation
The demand of Switching Power Supply is also significantly increased therewith.Normal shock active clamp technology is the patent that VICOR company invents in nineteen eighty-two, because
There is preferable working efficiency for it, higher power density may be implemented.By major modular power source manufacturer after patent unlock in 2002
It is widely used.
Normal shock active clamp technology is divided to two kinds of clamp technology and lower clamp technology, and lower clamp technology is mainly used in low defeated
Enter in voltage application, its advantage is that the driving of clamper tube and the driving of supervisor can share reference point, the disadvantage is that clamper
Switch must use PMOS tube, and clamp switch and main switch are in parallel, and the voltage stress of clamp switch is relatively high, due to high pressure
PMOS tube model is not easy to select on the market, following clamp technology be typically employed in the DC-DC module of low pressure.Upper clamper
Technology can be clamp switch, the primary side winding parallel connection of clamp switch metal-oxide-semiconductor and transformer, clamp switch MOS using NMOS tube
Tube voltage is far below main switch metal-oxide-semiconductor voltage, but the disadvantage is that the reference point of clamp switch is floating-point, it is necessary to it is driven using bootstrapping
Dynamic or isolation drive.
Circuit as shown in Figure 1 is a kind of existing upper clamp technology circuit, and drive scheme is to be controlled by a common PWM
Chip and high pressure bootstrapping driving chip composition, PWM control IC one driving signal of offer of single channel driving is booted to high pressure to be driven
By after signal amplification, formation is driven all the way for directly driving main switch Q1 by IC, high pressure bootstrapping driving IC.In addition all the way will
The control of input forms the floating driving in two tunnels after carrying out complementary reversed, Bootstrap, for driving clamp switch Q2.All the way driving and
It is common to prevent that dead time is provided between the driving of two tunnels.
The shortcomings that technical solution is, general high voltage bootstrapping driving chip expensive using the bootstrapping driving chip of high pressure
The delay for outputting and inputting driving signal it is very big, much more than 100nS, in hiccup formula short-circuit protection, when limiting work
Between section minimum duty cycle, cause short circuit current protection big, be easily damaged main switch.
Circuit as shown in Figure 2 is a kind of existing lower clamp technology circuit, in the DC-DC module power source of low input
It is relatively common.Its drive scheme is the pwm chip using a profession.1 road PWM of profession drive control chip output drives
Dynamic signal directly drives main switch Q1, and 2 road PWM drive signals of output pass through to be generated by the negative voltage that capacitor and diode form
The advantages of circuit, the negative voltage driving signal for generating a phase shift drive clamp switch Q2, the circuit is driving circuit compares
Relatively simply, the shortcomings that this technical solution is can only can be selected using the control chip of profession, no substitute materials.And it is this special
Expensive, usually 5 times or more of general control chip of the pwm chip of industry.The power source project of some low costs is opened
It hopes and halts on hair.
The main problem point of two kinds of synchronous rectification actuation techniques in summary is as shown in following table one.
Table one
| Driving delay | Cost | |
| Clamp technology on Fig. 1 | Greatly | Greatly |
| Clamp technology under Fig. 2 | Greatly |
Summary of the invention
To solve the problems of above-mentioned prior art, it is an object of the present invention to provide a kind of circuit structure is simple
And driving is delayed the driving circuit of clamp switch in small Switching Power Supply.
With this corresponding, the switch electricity that and a kind of driving simple it is a further object to provide circuit structure is delayed small
The driving method of clamp switch in source.
In order to achieve the above-mentioned object of the invention, the present invention provides a kind of driving circuit of clamp switch in Switching Power Supply, clamper
Switch uses upper clamp circuit, and clamp switch is NMOS tube, including associated drive circuitry and dead zone function circuit, and the auxiliary is driven
Dynamic circuit, auxiliary winding NS and capacitor C1 including transformer, auxiliary winding NS are generated mutual with the PWM drive signal of main switch
The backward voltage of benefit is added to the grid of clamp switch by capacitor C1 as the driving voltage of clamp switch, to close in main switch
When disconnected, control clamp switch conducting；The dead zone function circuit generates dead between clamp switch and the turn-on time of main switch
Area's time, with before main switch is connected, control clamp switch is turned off.
Preferably, the different name end of the auxiliary winding NS of the associated drive circuitry is connected to one end of capacitor C1, capacitor C1
The other end be connected to the grid of clamp switch Q3；The Same Name of Ends of auxiliary winding NS be connected respectively to clamp switch Q3 source electrode and
The drain electrode of main switch Q4；The dead zone function circuit, including metal-oxide-semiconductor Q2, capacitor C2, resistance R2, diode D2, the one of resistance R2
End connects the different name end of the auxiliary winding NS for being followed by associated drive circuitry with the cathode of diode D2, the other end of resistance R2 with
The anode connection of diode D2 is followed by the grid of metal-oxide-semiconductor Q2；One end of capacitor C2 is connected to the grid of metal-oxide-semiconductor Q2, capacitor C2
The other end be connected to the source electrode of metal-oxide-semiconductor Q2；The drain electrode of metal-oxide-semiconductor Q2 is connected to the grid of clamp switch Q3；The source electrode of metal-oxide-semiconductor Q2
It is also connected to the drain electrode of main switch Q4.
Preferably, the associated drive circuitry, further includes resistance R1, resistance R1 be connected on the different name end of auxiliary winding NS with
Between capacitor C1, clamp switch Q3 and the dead time between the turn-off time of main switch Q4 are formed, to turn off in main switch Q4
Afterwards, make clamp switch Q3 Delayed conducting.
The present invention also provides a kind of driving circuit of clamp switch in Switching Power Supply, clamp switch uses upper clamp circuit,
Including associated drive circuitry and dead zone function circuit, the associated drive circuitry, auxiliary winding NS and capacitor including transformer
C1, the different name end of auxiliary winding NS are connected to one end of capacitor C1, and the other end of capacitor C1 is connected to the grid of clamp switch Q3；
The Same Name of Ends of auxiliary winding NS is connected respectively to the drain electrode of the source electrode and main switch Q4 of clamp switch Q3；The dead zone function electricity
Road, including metal-oxide-semiconductor Q2, capacitor C2, resistance R2, diode D2 are connected to after one end of resistance R2 is connected with the cathode of diode D2
The different name end of the auxiliary winding NS of associated drive circuitry, the other end of resistance R2 is connected with the anode of diode D2 is followed by MOS
The grid of pipe Q2；One end of capacitor C2 is connected to the grid of metal-oxide-semiconductor Q2, and the other end of capacitor C2 is connected to the source electrode of metal-oxide-semiconductor Q2；
The drain electrode of metal-oxide-semiconductor Q2 is connected to the grid of clamp switch Q3；The source electrode of metal-oxide-semiconductor Q2 is also connected to the drain electrode of main switch Q4.
Preferably, the associated drive circuitry, further includes resistance R1, resistance R1 be connected on the different name end of auxiliary winding NS with
Between capacitor C1, clamp switch Q3 and the dead time between the turn-off time of main switch Q4 are formed, to turn off in main switch Q4
Afterwards, make clamp switch Q3 Delayed conducting.
The present invention separately provides a kind of driving method of clamp switch in Switching Power Supply, and clamp switch uses upper clamp circuit,
Steps are as follows: Auxiliary Drive Signal generates step, is generated by the auxiliary winding of transformer mutual with the PWM drive signal of main switch
The backward voltage of benefit and is added to by capacitor the grid of clamp switch as the driving voltage of clamp switch, to close in main switch
When disconnected, control clamp switch conducting；First dead zone control step generates dead between clamp switch and the turn-on time of main switch
Area's time, with before main switch is connected, control clamp switch is turned off.
Preferably, further include the second dead zone control step before Auxiliary Drive Signal generates step, pass through resistance and pincers
The gate-source interpolar junction capacity Cgs of bit switch forms RC network, generates clamp switch and the dead zone between the turn-off time of main switch
Time, after main switch turns off, to make clamp switch Delayed conducting.
The present invention provides a kind of driving circuit of clamp switch in Switching Power Supply, including clamper driving circuit 1, dead zone control again
Circuit 2 processed.A kind of driving circuit 1 of clamp switch, which generates a clamp switch driving signal, described
Clamp switch driving signal it is characterized in that it forms complementary with main path switch PWM drive signal, and possess dead time.Institute
The another feature for the clamp switch driving signal stated is to float driving signal, and reference point is the source electrode of clamp switch MOS.
The clamper driving circuit 1 includes a transformer auxiliary winding NS and driving capacitor C1, transformer auxiliary winding
The Same Name of Ends of NS is connected to the drain electrode of main switch metal-oxide-semiconductor Q4, and the different name end of auxiliary winding NS is connected to one end of driving capacitor C1,
The other end of driving capacitor C1 is connected to the grid of the clamp switch metal-oxide-semiconductor Q3 of normal shock active clamp.
The dead zone function circuit 2 includes switch metal-oxide-semiconductor Q2, capacitor C2, resistance R2, diode D2.The one of resistance R2
After end is connected with the cathode of diode D2, it is connected to the different name end of the auxiliary winding NS of the clamper driving circuit 1, resistance R2's is another
One end connects with the anode of diode D2 and is followed by the grid of control switch metal-oxide-semiconductor Q2.One end of capacitor C2 is connected to switch
On the grid of metal-oxide-semiconductor Q2, the other end is connected on switch metal-oxide-semiconductor Q2 source electrode.Switch metal-oxide-semiconductor Q2 drain electrode is connected to clamp switch Q3
Grid, switch metal-oxide-semiconductor Q2 source electrode be connected in the drain electrode of main switch Q4.
When the main switch Q4 drive level is converted into low level by high level, when main switch Q4 is turned off, become
The main winding NP voltage reversal of depressor, different name end voltage is high, Same Name of Ends voltage is low.Auxiliary winding NS's is also that different name end voltage is high
Same Name of Ends is low.Positive drive level is by driving capacitor C1 to be added on the grid of clamp switch Q3, clamp switch metal-oxide-semiconductor Q3 quilt
The main winding NP of driving conducting, transformer carries out degaussing.
When the different name end high Same Name of Ends of voltage of the auxiliary winding NS is low, the resistance R2 of the dead zone function circuit 2
It charges to capacitor C2, when level reaches switching tube metal-oxide-semiconductor Q2 driving threshold values on C2, switching tube metal-oxide-semiconductor Q2 is switched on,
The gate drive level of the clamp switch metal-oxide-semiconductor Q3 is pulled low, and clamp switch metal-oxide-semiconductor Q3 is turned off in advance, thus shape
At the dead zone between main switch Q4 and clamp switch metal-oxide-semiconductor Q3.
The transformer auxiliary winding NS is the winding on the main transformer T1 of normal shock active clamp topology.Itself and
The phase relation of main winding is as shown in Figure 3.
The switch metal-oxide-semiconductor Q2, which does not limit to, is limited to metal-oxide-semiconductor, can be the controllable crystal switch of other forms.
The driving circuit of clamp switch of the invention background circuit more shown in FIG. 1 has the following advantages that,
1, additional bootstrapping driving chip is not needed, circuit is simple, small in size.
2, main switch driving signal is no-delay, short-circuit protection high reliablity.
3, pwm chip is versatile, is easier to realize the chip substitution of multi-brand polytypic.
Detailed description of the invention
Fig. 1 is the existing upper clamp technology circuit of normal shock active clamp；
Fig. 2 is the existing lower clamp technology circuit of normal shock active clamp；
Fig. 3 is the circuit diagram of the driving circuit of clamp switch in the Switching Power Supply of the embodiment of the present invention one；
Fig. 4 is the drive waveforms of each switching tube in the driving circuit of clamp switch in the Switching Power Supply of the embodiment of the present invention one
Figure；
Fig. 5 is the circuit diagram of the driving circuit of clamp switch in the Switching Power Supply of the embodiment of the present invention two；
Fig. 6 is the drive waveforms of each switching tube in the driving circuit of clamp switch in the Switching Power Supply of the embodiment of the present invention two
Figure；
Fig. 7 is the description of symbols in Figure of description of the invention.
Specific embodiment
Made improvement compared with the existing technology for a better understanding of the present invention, specific real to of the invention two kinds
Before the mode of applying is described in detail, first present inventive concept combination attached drawing is illustrated.
As shown in figure 3, a kind of driving circuit of Switching Power Supply clamp switch, using the backward voltage of transformer auxiliary winding
The driving voltage of clamp switch metal-oxide-semiconductor is done, increases by a dead zone function circuit to generate a dead band control logic signal, described is dead
Area's control circuit 2 exports a control logic signal, and clamp switch metal-oxide-semiconductor is allowed to turn off in advance.Allow the master of normal shock active clamp circuit
The conducting for switching metal-oxide-semiconductor and clamp switch metal-oxide-semiconductor generates a dead time.The dead time typically refers to two in this field
It is a to switch the time zone being all not turned on.
Embodiment one
Fig. 3 shows the driving circuit of the Switching Power Supply clamp switch of the embodiment of the present invention one, the clamp switch
Driving circuit includes clamper driving circuit 1, dead zone function circuit 2.
The clamper driving circuit 1 generates the driving signal of a clamp switch, the driving signal feature of clamp switch be it with
Main switch PWM drive signal forms complementation, and possesses dead time.Another feature of the driving signal of the clamp switch
It is to float driving signal, reference point is the source electrode of clamp switch MOS.
The clamper driving circuit 1 includes a transformer auxiliary winding NS and driving capacitor C1, transformer auxiliary winding
The Same Name of Ends of NS is connected respectively to the drain electrode of the source electrode and main switch Q4 of clamp switch Q3, and the different name end of auxiliary winding NS is connected to
One end of capacitor C1 is driven, the other end of driving capacitor C1 is connected to the grid of the clamp switch metal-oxide-semiconductor Q3 of normal shock active clamp.
Therefore, clamper driving circuit 1 is alternatively referred to as associated drive circuitry.Wherein, clamp switch metal-oxide-semiconductor Q3 may be simply referred to as clamp switch
Q3 is NMOS tube.Main switch metal-oxide-semiconductor Q4 may be simply referred to as main switch Q4, be NMOS tube.
The dead zone function circuit 2 includes switch metal-oxide-semiconductor Q2, capacitor C2, resistance R2, diode D2.The one of resistance R2
After end is connected with the cathode of diode D2, it is connected to the different name end of the auxiliary winding NS of the clamper driving circuit 1, resistance R2's is another
One end connects with the anode of diode D2 and is followed by the grid of control switch metal-oxide-semiconductor Q2.One end of capacitor C2 is connected to switch
On the grid of metal-oxide-semiconductor Q2, the other end of capacitor C2 is connected on the source electrode of switch metal-oxide-semiconductor Q2.Switch the drain electrode connection of metal-oxide-semiconductor Q2
To the grid of clamp switch Q3, the source electrode for switching metal-oxide-semiconductor Q2 is connected in the drain electrode of main switch Q4.
Fig. 4 shows the embodiment of the present invention one, and respectively the drive waveforms of switch metal-oxide-semiconductor and clamp switch metal-oxide-semiconductor Q3 and master are opened
The turn-on time and the dead time TD between them for closing metal-oxide-semiconductor Q4.Wherein, VGS1 is the duty ratio waveform of PWM in IC1, i.e.,
It is the PWM drive signal of the main switch Q4 of IC1 output.VGS2 is the drive waveforms of switching tube Q2.VGS3 is clamp switch Q3
Drive waveforms, which forms complementary with the PWM drive signal of main switch Q4, and possesses dead time TD.This hair
Bright to be formed by main switch metal-oxide-semiconductor drive waveforms and clamper metal-oxide-semiconductor drive waveforms, without the delay in generation time, short circuit is protected
Protect high reliablity.
When main switch Q4 drive level is converted into low level by high level, when main switch Q4 is turned off, transformation
The main winding NP voltage reversal of device, different name end voltage is high, Same Name of Ends voltage is low.Auxiliary winding NS's is also that different name end voltage height is same
Name end is low.By driving capacitor C1 to be added on the grid of clamp switch Q3, clamp switch metal-oxide-semiconductor Q3 is driven positive drive level
The main winding NP of dynamic conducting, transformer carries out degaussing.This circuit is due to using auxiliary winding NS to provide driving for clamp switch Q3
Signal, does not need additional bootstrapping driving chip, and circuit is simple, small in size.
When the different name end high Same Name of Ends of voltage of the auxiliary winding NS is low, the resistance R2 of the dead zone function circuit 2
It charges to capacitor C2, when level reaches switching tube metal-oxide-semiconductor Q2 driving threshold values on capacitor C2, switching tube metal-oxide-semiconductor Q2 is led
Logical, the gate drive level of the clamp switch metal-oxide-semiconductor Q3 is pulled low, and clamp switch metal-oxide-semiconductor Q3 is turned off in advance, thus
Form the dead zone between main switch Q4 and clamp switch metal-oxide-semiconductor Q3.
Driving signal all the way is converted into two-way complementation and floated all the way to drive since driving circuit of the invention realizes
Driving signal dynamic, that dead time can be generated between two-way driving signal, can directly select general in the selection of control chip
Property single channel strong, at low cost control chip.
Embodiment two
Fig. 5 shows the driving circuit of the Switching Power Supply clamp switch of the embodiment of the present invention two, and case study on implementation one
Difference is to increase by a resistance R1 in clamper driving circuit 1, and connection relationship is that one end of resistance R1 is connected to auxiliary winding NS's
Different name end, the other end of resistance R1 are connected to one end of driving capacitor C1, and other connection relationships remain unchanged.
Present case increased resistance R1 and clamp switch metal-oxide-semiconductor Q3 gate-to-source junction capacity Cgs form RC network,
When the different name end voltage of auxiliary winding NS is timing, the grid voltage GS3 of clamp switch metal-oxide-semiconductor Q3 reaches driving threshold values after being delayed
Voltage, clamp switch metal-oxide-semiconductor Q3 are delayed by conducting.The course of work later is consistent with case study on implementation one.
Fig. 6 shows the embodiment of the present invention two respectively drive waveforms of switch metal-oxide-semiconductor and clamp switch metal-oxide-semiconductor and main switch
The turn-on time of metal-oxide-semiconductor and two dead times between them, that is, when being created on the shutdown of clamp switch Q3 and main switch Q4
Between between dead time TD1, and generate the dead time TD2 between clamp switch Q3 and the turn-on time of main switch Q4.Its
In, VGS1 is the duty ratio waveform of PWM in IC1, and VGS2 is the drive waveforms of switching tube Q2, and VGS3 is the driving of clamp switch Q3
Waveform.
The driving circuit of clamp switch in Switching Power Supply of the present invention is not necessarily to the floating ground driving principle of double-switch complementary
The complementary circuit such as bootstrapping driving or isolation drive eliminates the design limit of the existing control IC performance indicator such as bootstrapping driving chip
System designs the driving circuit of clamp switch more flexible.And the driving circuit does not choose circuit topology, may be applied not only in normal shock has
Source clamper topology, the floating ground driving principle based on double-switch complementary is it is found that the driving circuit of clamp switch of the invention can be with
The driving in flyback active clamp topology, asymmetrical half-bridge topology, the clamp switch of asymmetrical half-bridge flyback topologies is applied, equally
Without complementary circuits such as additional bootstrapping driving or isolation drives.
Claims (4)
1. the driving circuit of clamp switch in a kind of Switching Power Supply, clamp switch uses upper clamp circuit, clamp switch NMOS
Pipe, including associated drive circuitry and dead zone function circuit,
The associated drive circuitry, auxiliary winding NS and capacitor C1 including transformer, auxiliary winding NS are generated and main switch
The backward voltage of PWM drive signal complementation is added to the grid of clamp switch by capacitor C1 as the driving voltage of clamp switch,
With when main switch turns off, control clamp switch is connected；The different name end of the auxiliary winding NS of the associated drive circuitry is connected to
One end of capacitor C1, the other end of capacitor C1 are connected to the grid of clamp switch Q3；The Same Name of Ends of auxiliary winding NS is separately connected
To the drain electrode of the source electrode and main switch Q4 of clamp switch Q3；
It is characterized by: the dead zone function circuit, generates the dead time between clamp switch and the turn-on time of main switch,
With before main switch is connected, control clamp switch is turned off；The dead zone function circuit, including metal-oxide-semiconductor Q2, capacitor C2, resistance R2,
One end of diode D2, resistance R2 connect the different name for being followed by the auxiliary winding NS of associated drive circuitry with the cathode of diode D2
End, the other end of resistance R2 connect the grid for being followed by metal-oxide-semiconductor Q2 with the anode of diode D2；One end of capacitor C2 is connected to
The grid of metal-oxide-semiconductor Q2, the other end of capacitor C2 are connected to the source electrode of metal-oxide-semiconductor Q2；The drain electrode of metal-oxide-semiconductor Q2 is connected to clamp switch Q3
Grid；The source electrode of metal-oxide-semiconductor Q2 is also connected to the drain electrode of main switch Q4.
2. the driving circuit of clamp switch in Switching Power Supply according to claim 1, it is characterised in that: the auxiliary drive
Circuit further includes resistance R1, and resistance R1 is connected between the different name end of auxiliary winding NS and capacitor C1, formed clamp switch Q3 with
Dead time between the turn-off time of main switch Q4, to make clamp switch Q3 Delayed conducting after main switch Q4 shutdown.
3. the driving circuit of clamp switch in a kind of Switching Power Supply, clamp switch uses upper clamp circuit, including auxiliary drive electricity
Road and dead zone function circuit,
The associated drive circuitry, auxiliary winding NS and capacitor C1 including transformer, the different name end of auxiliary winding NS is connected to
One end of capacitor C1, the other end of capacitor C1 are connected to the grid of clamp switch Q3；The Same Name of Ends of auxiliary winding NS is separately connected
To the drain electrode of the source electrode and main switch Q4 of clamp switch Q3；
It is characterized by: the dead zone function circuit, including metal-oxide-semiconductor Q2, capacitor C2, resistance R2, diode D2, the one of resistance R2
After end is connected with the cathode of diode D2, it is connected to the different name end of the auxiliary winding NS of associated drive circuitry, the other end of resistance R2
The grid for being followed by metal-oxide-semiconductor Q2 is connected with the anode of diode D2；One end of capacitor C2 is connected to the grid of metal-oxide-semiconductor Q2, capacitor
The other end of C2 is connected to the source electrode of metal-oxide-semiconductor Q2；The drain electrode of metal-oxide-semiconductor Q2 is connected to the grid of clamp switch Q3；The source of metal-oxide-semiconductor Q2
Pole is also connected to the drain electrode of main switch Q4.
4. the driving circuit of clamp switch in Switching Power Supply according to claim 3, it is characterised in that: the auxiliary drive
Circuit further includes resistance R1, and resistance R1 is connected between the different name end of auxiliary winding NS and capacitor C1, formed clamp switch Q3 with
Dead time between the turn-off time of main switch Q4, to make clamp switch Q3 Delayed conducting after main switch Q4 shutdown.
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| CN201710537192.3A CN107196517B (en) | 2017-07-04 | 2017-07-04 | The driving circuit of clamp switch in Switching Power Supply |
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| US11990841B2 (en) * | 2022-03-08 | 2024-05-21 | Minmax Technology Co., Ltd. | Multi-mode hybrid control DC-DC converting circuit and control method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW521481B (en) * | 2000-05-17 | 2003-02-21 | Sony Corp | Switching power supply apparatus with active clamp circuit |
| US7095638B2 (en) * | 2003-09-03 | 2006-08-22 | Tyco Electronics Power Systems, Inc. | Controller for complementary switches of a power converter and method of operation thereof |
| US7006364B2 (en) * | 2004-03-15 | 2006-02-28 | Delta Electronics, Inc. | Driving circuit for DC/DC converter |
| CN103346678B (en) * | 2013-07-11 | 2015-09-23 | 广州金升阳科技有限公司 | A kind of auxiliary switch pipe isolated drive circuit of active clamp circuit of reversed excitation |
| CN103795260B (en) * | 2014-01-21 | 2016-01-20 | 广州金升阳科技有限公司 | A kind of incomplementarity flyback active clamp converter |
| CN104578739B (en) * | 2015-01-20 | 2017-04-26 | 无锡三石电子有限公司 | Active clamping circuit of quasi-resonant flyback converter |
| CN106787633B (en) * | 2016-12-16 | 2019-07-19 | 广州金升阳科技有限公司 | Isolation drive system |
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2017
- 2017-07-04 CN CN201710537192.3A patent/CN107196517B/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4243262A1 (en) * | 2022-03-09 | 2023-09-13 | Minmax Technology Co., Ltd. | Self-driven active clamp circuit |
| EP4243270A1 (en) * | 2022-03-09 | 2023-09-13 | Minmax Technology Co., Ltd. | Multi-mode hybrid control dc-dc converting circuit and control method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107196517A (en) | 2017-09-22 |
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