CN209001922U - A kind of SiC MOSFET drive circuit system - Google Patents
A kind of SiC MOSFET drive circuit system Download PDFInfo
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- CN209001922U CN209001922U CN201821150342.1U CN201821150342U CN209001922U CN 209001922 U CN209001922 U CN 209001922U CN 201821150342 U CN201821150342 U CN 201821150342U CN 209001922 U CN209001922 U CN 209001922U
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Abstract
A kind of SiC MOSFET drive circuit system disclosed by the utility model, including power supply module PM1, power supply module PM1 is connected with bootstrapping power supply circuit in turn, upper bridge arm high-speed isolated driving chip U1, upper bridge arm SiC MOSFET driving circuit and upper bridge arm SiC switch mosfet pipe S1, power supply module PM1 is also connected with lower bridge arm high-speed isolated driving chip U2 in turn, lower bridge arm SiC MOSFET driving circuit and lower bridge arm SiC switch mosfet pipe S2, S1 connects load with the midpoint bridge arm of S2, S1 drain electrode connection half-bridge bus DC_BUS+, S2 source electrode connects half-bridge bus DC_BUS-；It further include thering is logic gate level translation circuit U T1, UT1 to connect respectively with U1 and U2.
Description
Technical field
The utility model belongs to power electronics driving circuit technical field, is related to a kind of SiC MOSFET driving circuit system
System.
Background technique
The wide bandgap semiconductor power electronic devices with silicon carbide (SiC) for representative achieves booming in recent years, with
Silicon (Si) device is compared, and is saturated mobility with higher carrier, therefore have higher critical field strength, higher thermal conductivity
And the advantages that lower on-state loss.SiC MOSFET, can be significant since conducting resistance is small, switching speed is fast, high pressure resistant
Improve switching loss and on-state loss, be conducive to improve transducer effciency, thus is widely used in each type high temp, high pressure and height
Switching frequency occasion.But there are still more problems at present for the design of SiC MOSFET driving circuit.Due to SiC device characterisitic parameter
Difference, result in this way the threshold voltage of the grid of SiC MOSFET and grid voltage can power limit value compare Si MOSFET and
IGBT is lower, if being applied under high-speed switch state, the high du/dt of hourglass source electrode can be in the feedback capacity of its grid leak interpolar
Feedback current is generated in (Miller capacitance), the circuit formed in this way with gate electrode resistance can generate pressure drop, if this value is higher than its grid
Threshold voltage can be easy to cause misleading for SiC MOSFET.For problems, the scheme being usually taken is to driving circuit
Power supply provides certain negative voltage, guarantees with can guarantee grid in down tube SiC switch mosfet stateful switchover process on bridge arm
Interference rejection ability.But since the negative pressure ability to bear of SiC MOSFET is weaker, switch shape is connected in high speed complementation with bridge arm switching tube
The grid source electrode of di/dt meeting and circuit parasitic capacitance in SiC MOSFET under state generates biggish due to voltage spikes, is easy in this way
Puncture its grid oxic horizon, leads to device failure.
In addition to this, for half-bridge SiC MOSFET driving circuit, usually used mode is that upper and lower bridge arm driving is double
Power supply power supply, reliability and the power device grid source electrode to guarantee driving output voltage are reliably open-minded.But multiple power supplies are single-phase
And it will increase the complexity of power supply design in three-phase system.
Utility model content
The purpose of this utility model is to provide a kind of SiC MOSFET drive circuit systems.
The utility model is the technical scheme adopted is that a kind of SiC MOSFET drive circuit system, including power supply
Module PM1, power supply module PM1 are connected with bootstrapping power supply circuit, upper bridge arm high-speed isolated driving chip U1, upper bridge arm in turn
SiC MOSFET driving circuit and upper bridge arm SiC switch mosfet pipe S1, power supply module PM1 are also connected with lower bridge in turn
Arm high-speed isolated driving chip U2, lower bridge arm SiC MOSFET driving circuit and lower bridge arm SiC switch mosfet pipe S2, upper bridge
Arm SiC switch mosfet pipe S1 connects load, upper bridge arm SiC with the midpoint bridge arm of lower bridge arm SiC switch mosfet pipe S2
Switch mosfet pipe S1 drain electrode connection half-bridge bus DC_BUS+, it is female that lower bridge arm SiC switch mosfet pipe S2 source electrode connects half-bridge
Line DC_BUS-；Further include having logic gate level translation circuit U T1, logic gate level translation circuit U T1 respectively with upper bridge arm high speed
Isolation drive chip U1 is connected with lower bridge arm high-speed isolated driving chip U2.
The utility model is also characterized by
Power supply module PM1 uses B2424S chip, and the reference ground of power supply module PM1 is GND-2.
Logic gate level translation circuit U T1 uses 74LVX4245 chip, is used for logic gate level translation circuit U T1 logic
The reference ground of power supply is GND.
Upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2 are all made of 1EDI20N12AF
High speed magnetic isolating chip, the pin VCC1 and lower bridge arm high-speed isolated driving chip U2 of upper bridge arm high-speed isolated driving chip U1
Pin VCC1 be all connected with logic power, the pin GND1 and lower bridge arm high-speed isolated of upper bridge arm high-speed isolated driving chip U1 drives
The pin GND1 of dynamic chip U2 is connect with GND, pin GND2 and the lower bridge arm high speed of upper bridge arm high-speed isolated driving chip U1
The pin GND2 of isolation drive chip U2 is connected with GND-2, the pin IN- and lower bridge of upper bridge arm high-speed isolated driving chip U1
The pin IN- of arm high-speed isolated driving chip U2 is all connected with GND；
The outlet side Uo+ of the pin VCC2 connection power supply module PM1 of lower bridge arm high-speed isolated driving chip U2, upper bridge
The pin VCC2 of arm high-speed isolated driving chip U1 is connect with bootstrapping power supply circuit；Upper bridge arm high-speed isolated driving chip U1's draws
The output terminals A 0 of foot IN+ connection logic gate level translation circuit U T1；The pin IN+ of lower bridge arm high-speed isolated driving chip U2 connects
Connect 1 end of output terminals A of logic gate level translation circuit U T1.
Power supply circuit of booting includes the diode DS1, resistance R2 and bootstrap capacitor Cb1 being sequentially connected in series, diode DS1 anode
Connect with the outlet side Uo+ of power supply module PM1, the both ends bootstrap capacitor Cb1 respectively with upper bridge arm high-speed isolated driving chip
The pin GND2 of U1 is connected with the pin VCC2 of upper bridge arm high-speed isolated driving chip U1.
Upper bridge arm SiC MOSFET driving circuit includes negative voltage generating circuit and driving output circuit.
Negative voltage generating circuit includes zener diode ZD2, electrolytic capacitor CT1 and resistance R3, zener diode ZD2 cathode with
The source electrode of upper bridge arm SiC switch mosfet pipe S1 connects, and zener diode ZD2 anode is connect with GND-2, electrolytic capacitor CT1
It is connected in parallel on zener diode ZD2, the one end resistance R3 is connected on the node between resistance R2 and bootstrap capacitor Cb1, resistance R3
The other end is connect with electrolytic capacitor CT1, forms charge circuit.
Driving output circuit includes triode Q1, gate pole bleed-off circuit resistance R4, low value capacitance C3 and zener diode
ZD1, triode Q1 base stage are connect by resistance R5 with the OUT- of upper bridge arm high-speed isolated driving chip U1, triode Q1 transmitting
Grade is connected with lower bridge arm SiC switch mosfet pipe S2 grid, and triode Q1 collector accesses upper bridge arm SiC switch mosfet pipe
The source electrode of S1；Gate pole bleed-off circuit resistance R4, low value capacitance C3 and zener diode ZD1 are connected in parallel on bridge arm SiC respectively
Between the grid and source electrode of switch mosfet pipe S1.
Upper bridge arm SiC switch mosfet pipe S1 grid is also connected with open resistance Rg1 and shutdown resistance Rg2, opens electricity
Hinder the pin OUT+ that the Rg1 other end connects upper bridge arm high-speed isolated driving chip U1, shutdown one end resistance Rg2 and upper bridge arm high speed
The pin OUT- connection of isolation drive chip U1, the shutdown resistance Rg2 other end are connected to bridge arm SiC switch mosfet pipe S1
Between grid and open resistance Rg1.
Upper bridge arm SiC MOSFET driving circuit is identical with lower bridge arm SiC MOSFET driving circuit structure.
The utility model has the beneficial effects that:
(1) the SiC MOSFET drive circuit system of the inhibition bridge arm crosstalk of the utility model, in SiC switch mosfet
Triode is added in the grid source electrode of pipe, when triode B, E pole tension is less than its threshold voltage by grid active clamp to SiC
Switch mosfet pipe source electrode can increase the turn-off speed of SiC MOSFET, and effectively half-bridge cells can be inhibited to be caused due to crosstalk
Upper bridge arm negative pressure spike and lower bridge arm positive pressure spike；
(2) the SiC MOSFET drive circuit system of the inhibition bridge arm crosstalk of the utility model, using the side of bootstrapping power supply
Formula is the power supply of half-bridge SiC MOSFET driving chip, reduces the quantity of driving power supply, reduces system cost；
(3) the SiC MOSFET drive circuit system of the inhibition bridge arm crosstalk of the utility model, is generated using passive device
Negative pressure can enhance the anti-interference ability of grid source electrode, and switching tube caused by Miller effect is inhibited to mislead, while can be reduced negative pressure production
The use of raw power supply, save the cost.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of SiC MOSFET drive circuit system of the utility model；
Fig. 2 is the structural representation of power supply module PM1 in a kind of SiC MOSFET drive circuit system of the utility model
Figure；
Fig. 3 is the knot of logic gate level translation circuit U T1 in a kind of SiC MOSFET drive circuit system of the utility model
Structure schematic diagram；
Fig. 4 is the structural schematic diagram of half-bridge drive circuit in a kind of SiC MOSFET drive circuit system of the utility model；
Fig. 5 is a kind of a kind of structural schematic diagram of embodiment of SiC MOSFET drive circuit system of the utility model；
Fig. 6 is that upper bridge arm SiC switch mosfet pipe S1 is opened in a kind of SiC MOSFET drive circuit system of the utility model
Circuit working state figure when logical；
Fig. 7 is that lower bridge arm SiC switch mosfet pipe S2 is opened in a kind of SiC MOSFET drive circuit system of the utility model
Circuit working state figure when logical.
Specific embodiment
The utility model is described in detail with reference to the accompanying drawings and detailed description.
A kind of SiC MOSFET drive circuit system of the utility model supplies as shown in Figure 1, including power supply module PM1
Power supply module PM1 is connected with bootstrapping power supply circuit, upper bridge arm high-speed isolated driving chip U1, upper bridge arm SiC MOSFET in turn
Driving circuit and upper bridge arm SiC switch mosfet pipe S1, power supply module PM1 are also connected with lower bridge arm high-speed isolated in turn
Driving chip U2, lower bridge arm SiC MOSFET driving circuit and lower bridge arm SiC switch mosfet pipe S2, upper bridge arm SiC
Switch mosfet pipe S1 connects load with the midpoint bridge arm of lower bridge arm SiC switch mosfet pipe S2, and upper bridge arm SiC MOSFET is opened
Pipe S1 drain electrode connection half-bridge bus DC_BUS+ is closed, lower bridge arm SiC switch mosfet pipe S2 source electrode connects half-bridge bus DC_
BUS-；Further include having logic gate level translation circuit U T1, logic gate level translation circuit U T1 respectively with upper bridge arm high-speed isolated
Driving chip U1 is connected with lower bridge arm high-speed isolated driving chip U2.
As shown in Fig. 2, power supply module PM1 uses B2424S chip, the reference ground of power supply module PM1 is
GND-2, power supply circuit PM1 provide for upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2
+ 24V driving voltage, with the SiC MOSFET gate turn-on voltage of satisfaction.
As shown in figure 3, logic gate level translation circuit U T1 uses 74LVX4245 chip, the reference ground of logic power is
GND, logic level conversion circuit UT1 are used to receive the driving signal from control chip, and main purpose is controller is defeated
Amplitude out is that the pulse of+3.3V is converted into and upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip
+ 5V the logic power that U2 matches, input side possess enable signal PWM/EN control 0E pin protection through high level pull down resistor
It is identical as input side pulse signal to export 8 tunnels by 5V power supply power supply after level conversion by rear class main power circuit, outlet side VCCA
Pwm signal distinguish the end IN+ of supreme bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2.
As shown in figure 4, upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2 are all made of
1EDI20N12AF high speed magnetic isolation drive chip, for receiving the PWM driving issued from logic gate level translation circuit U T1
Signal, and with bridge arm SiC switch mosfet pipe S1 and lower bridge arm SiC in power supply signal VCC2 driving after signal isolation is amplified
Switch mosfet pipe S2 switching tube, chip interior use the structure of push-pull output, to guarantee enough driving currents, accelerate SiC
MOSFET is open-minded；Upper bridge arm high-speed isolated driving chip U1 in lower bridge arm high-speed isolated driving chip U2: pin VCC1 is connected
Logic power, pin GND1 are connect with GND, and pin GND2 is connected with GND-2, pin IN- connection GND, to guarantee single ended input
Driving pulse；Decoupling capacitor C2 is connected between GND-2 and+24V driving voltage, the effect of decoupling capacitor C2 is removal pin
The noise of VCC2；
The pin VCC2 of upper bridge arm high-speed isolated driving chip U1 is connect with bootstrapping power supply circuit, and lower bridge arm high-speed isolated is driven
The outlet side Uo+ of the pin VCC2 connection power supply module PM1 of dynamic chip U2；Upper bridge arm high-speed isolated driving chip U1's
The output terminals A 0 of pin IN+ connection logic gate level translation circuit U T1, pin IN+ receive the level signal from UT1
PWM1A；1 end of output terminals A of the IN+ connection logic gate level translation circuit U T1 of lower bridge arm high-speed isolated driving chip U2, pin
IN+ receives the level signal PWM1B from UT1.
Power supply circuit of booting includes the diode DS1, resistance R2 and bootstrap capacitor Cb1 being sequentially connected in series, to guarantee in Xia Qiao
Cut-in voltage, diode DS1 sun are provided when arm SiC switch mosfet pipe S2 is turned off for upper bridge arm SiC switch mosfet pipe S1
Pole is connect with the outlet side Uo+ of power supply module PM1, and the both ends bootstrap capacitor Cb1 drive core with upper bridge arm high-speed isolated respectively
The pin VCC2 of piece U1 is connected with the pin GND2 of upper bridge arm high-speed isolated driving chip U1.
In lower bridge arm SiC switch mosfet pipe S2 conducting, bridge arm midpoint potential can be by upper bridge arm SiC switch mosfet
High potential DC_BUS+ when pipe S1 is connected is pulled down to the drain potential DC_BUS- of lower bridge arm SiC MOSFET switching tube S2,
During high-speed switch, the current potential at bridge arm midpoint can float between DC_BUS+ and DC_BUS-, and in lower bridge arm SiC
When switch mosfet pipe S2 is connected, the out-put supply side of upper bridge arm high-speed isolated driving chip U1 can be by pin VCC2 through current limliting electricity
It hinders R2 to charge to bootstrap capacitor Cb1, the potential difference at bootstrap capacitor Cb1 capacitor both ends can make lower bridge arm SiC switch mosfet pipe
The grid source electrode of S2 generates potential difference, so that upper bridge arm SiC MOSFET switching tube S1 effectively be connected.Diode DS1 is for obstructing
The ELECTROMOTIVE FORCE FEEDBACK AND LOAD FEED generated due to bridge arm midpoint floating potential is to power circuit.
Upper bridge arm SiC MOSFET driving circuit includes negative voltage generating circuit and driving output circuit.
Negative voltage generating circuit includes zener diode ZD2, electrolytic capacitor CT1 and resistance R3, zener diode ZD2 cathode with
The source electrode of upper bridge arm SiC switch mosfet pipe S1 connects, and zener diode ZD2 anode is connect with GND-2, generates negative pressure, uses
Dual power supply mode, to enhance the vulnerability to jamming after upper bridge arm SiC switch mosfet pipe S1 shutdown, electrolytic capacitor CT1 is in parallel
On zener diode ZD2, for keeping the stabilization of zener diode ZD2 both end voltage, the one end resistance R3 is connected to resistance R2
On node between bootstrap capacitor Cb1, the resistance R3 other end is connect with electrolytic capacitor CT1, is formed and is charged with electrolytic capacitor CT1
Circuit.
According to the upper bridge arm SiC of potential difference offer between zener diode ZD2/ZD4 anode and cathode due to zener effect generation
The negative voltage of switch mosfet pipe S1 and lower bridge arm SiC switch mosfet pipe S2 when off, to guarantee the anti-interference of grid source electrode
Property, preventing SiC MOSFET grid voltage as caused by Miller effect is more than the threshold voltage of SiC MOSFET, so as to cause
Upper and lower bridge arm switching tube misleads.
For the above bridge arm, driving output circuit include triode Q1, gate pole bleed-off circuit resistance R4, low value capacitance C3 and
Zener diode ZD1, triode Q1 base stage are connect by resistance R5 with the OUT- of upper bridge arm high-speed isolated driving chip U1, resistance
R5 is the base resistance of triode Q1 common collector working method, triode Q1 emitting stage and lower bridge arm SiC switch mosfet pipe
S2 grid is connected, as shown in figure 5, when work, in triode Q1 collector through bridge arm SiC MOSFET in low resistance R10 access
The source electrode of switching tube S1, low resistance R10 are the collector load resistor of triode Q1；Gate pole bleed-off circuit resistance R4, low value
Capacitor C3 and zener diode ZD1 is connected in parallel on respectively between the grid and source electrode of bridge arm SiC switch mosfet pipe S1.Pressure stabilizing
Diode ZD1 is for promoting gate-source voltage stability.
Low value capacitance C3/C6 shakes for suppressor grid, and high value resistor R4/R9 releases for accelerating gate charge, pressure stabilizing
Diode ZD1/ZD3 is used to enhance the interference rejection ability of grid.High value resistor R4/R9 and zener diode ZD1/ZD3 are used to increase
The interference rejection ability of strong grid.For upper bridge arm driving circuit, the grid source electrode of resistance R4 and upper bridge arm SiC switch mosfet pipe S1
Parallel connection, gate charge when turning off for upper bridge arm SiC switch mosfet pipe S1 provide discharge loop, accelerate its velocity of discharge；And
Zener diode ZD1 mainly absorbs the raising of grid grid potential due to caused by crosstalk etc., when the +/- potential of grid is more than set
When fixed voltage-stabiliser tube Zener voltage, voltage-stabiliser tube can be punctured, be maintained at gate-source voltage in the voltage stabilized range of voltage-stabiliser tube, protect grid
The danger that pole is punctured by positive/negative-pressure promotes grid robustness.
When system works, when the drain-source voltage that down tube SiC MOSFET S2 shutdown generates changes duCE/ dt and circuit
Parasitic inductance collective effect can generate the source electrode that negative voltage feeds back to upper tube SiC MOSFET S1, and when upper tube is opened, grid are penetrated
Pole can generate negative voltage spike, due to the presence of PNP triode Q1, grid potential can be made to be pulled down to the source electrode of switching tube, i.e.,
By the current potential of the grid active clamp of upper bridge arm SiC MOSFET switching tube S1 to S1 source electrode, bridge-arm tube SiC in guarantee
When MOSFETS1 is opened, lower bridge arm SiC switch mosfet pipe S2 can not receive interference.
Upper bridge arm SiC switch mosfet pipe S1 grid is also connected with open resistance Rg1 and shutdown resistance Rg2, opens electricity
Hinder the pin OUT+ that the Rg1 other end connects upper bridge arm high-speed isolated driving chip U1, shutdown one end resistance Rg2 and upper bridge arm high speed
The pin OUT- connection of isolation drive chip U1, the shutdown resistance Rg2 other end are connected to bridge arm SiC switch mosfet pipe S1
Between grid and open resistance Rg1.
Upper bridge arm SiC MOSFET driving circuit is identical with lower bridge arm SiC MOSFET driving circuit structure.
The half-bridge circuit working principle of the SiC MOSFET drive circuit system of the inhibition bridge arm crosstalk of the utility model is such as
Under:
Fig. 6 is circuit working state figure when upper bridge arm SiC switch mosfet pipe S1 is opened.PWM1A input high level,
Then the outlet side OUT+ of upper bridge arm high-speed isolated driving chip U1 is exported using VCC2 as the driving pulse of amplitude, by grid electricity
The grid of bridge arm SiC MOSFET switching tube S1 in Rg1 inflow is hindered, after upper bridge arm SiC switch mosfet pipe S1 conducting, source
Electric current Is is flowed through in pole, since the service time of SiC MOSFET is short, then can accordingly generate biggish dis/ dt, with lower bridge arm
The Ls2 voltage drop that parasitic inductance around SiC switch mosfet pipe S2 generates can change lower bridge arm SiC switch mosfet pipe S2
Grid potential, and due to the electric discharge of the Miller capacitance of S1 easily cause its mislead and, and Q2 can be effectively by lower bridge arm SiC
Source electrode of the grid clamping of switch mosfet pipe S2 to lower bridge arm SiC switch mosfet pipe S2, i.e. DC_BUS-, and due to
The presence of ZD2 and CT1, grid source electrode can be maintained at negative pressure state, so that it be inhibited to mislead.
Fig. 7 is circuit working state figure when lower bridge arm SiC switch mosfet pipe S2 is opened.With upper bridge arm SiC
The difference that switch mosfet pipe S1 is opened is that the crosstalk generated by lower bridge arm SiC switch mosfet pipe S2 occurs in upper bridge arm
The source electrode of SiC switch mosfet pipe S1, the di generated by high-speed switch state and drain current Idd/ dt can be with upper bridge arm
Parasitic inductance around SiC switch mosfet pipe S1 source electrode generates a potential difference, and negative pressure circuit ZD2 and CT1 are produced in addition
Raw negative pressure, it is easy to cause the negative pressure of grid source electrode to puncture, but due to the presence of concatenated voltage-stabiliser tube ZD1 and Q1, can have
Effect ground inhibits the breakdown of its grid source electrode negative pressure due to caused by crosstalk.
In addition, when lower bridge arm SiC switch mosfet pipe S2 is opened, since bridge arm midpoint potential is clamped at the leakage of S2
Pole, i.e. DC_BUS-, then bootstrap power supply circuit VCC2 is charged by bootstrap diode DS1, R2 to bootstrap capacitor Cb1, charging
Both end voltage can be superimposed upon on the grid source electrode of bridge arm SiC switch mosfet pipe S1, generate pressure drop, when S2 shutdown S1 is opened, energy
Enough reliable conducting S1.
In the above manner, the SiC MOSFET drive circuit system of the inhibition bridge arm crosstalk of the utility model, in SiC
PNP triode is added in the grid source electrode of switch mosfet pipe, when triode B, E pole tension is less than its threshold voltage that grid is active
Grid potential active clamp to source electrode can effectively be inhibited half-bridge cells due to string by clamper to SiC switch mosfet pipe source electrode
Upper bridge arm negative pressure spike and lower bridge arm positive pressure spike caused by disturbing；The SiC MOSFET of the inhibition bridge arm crosstalk of the utility model drives
Dynamic circuit system, the mode for using bootstrapping to power reduce driving power supply for the power supply of half-bridge SiC MOSFET driving chip
Quantity reduces system cost；The SiC MOSFET drive circuit system of the inhibition bridge arm crosstalk of the utility model, utilizes passive device
Part generates negative pressure, can enhance the anti-interference ability of grid source electrode, inhibits switching tube caused by Miller effect to mislead, can be reduced simultaneously
Negative pressure generates the use of power supply, save the cost.
Claims (10)
1. a kind of SiC MOSFET drive circuit system, which is characterized in that including power supply module PM1, the power supply
Module PM1 is connected with bootstrapping power supply circuit, upper bridge arm high-speed isolated driving chip U1, upper bridge arm SiC MOSFET driving electricity in turn
Road and upper bridge arm SiC switch mosfet pipe S1, the power supply module PM1 are also connected with the drive of lower bridge arm high-speed isolated in turn
Dynamic chip U2, lower bridge arm SiC MOSFET driving circuit and lower bridge arm SiC switch mosfet pipe S2, the upper bridge arm SiC
Switch mosfet pipe S1 connects load, the upper bridge arm SiC with the midpoint bridge arm of lower bridge arm SiC switch mosfet pipe S2
Switch mosfet pipe S1 drain electrode connection half-bridge bus DC_BUS+, the lower bridge arm SiC switch mosfet pipe S2 source electrode connection half
Bridge bus DC_BUS-；Further include having logic gate level translation circuit U T1, the logic gate level translation circuit U T1 respectively with it is upper
Bridge arm high-speed isolated driving chip U1 is connected with lower bridge arm high-speed isolated driving chip U2.
2. a kind of SiC MOSFET drive circuit system as described in claim 1, which is characterized in that the power supply module
PM1 uses B2424S chip, and the reference ground of the power supply module PM1 is GND-2.
3. a kind of SiC MOSFET drive circuit system as claimed in claim 2, which is characterized in that the logic gate level turns
Change circuit U T1 and use 74LVX4245 chip, is to the reference of the logic power for the logic gate level translation circuit U T1
GND。
4. a kind of SiC MOSFET drive circuit system as claimed in claim 3, which is characterized in that the upper bridge arm high speed every
Be all made of 1EDI20N12AF high speed magnetic isolating chip from driving chip U1 and lower bridge arm high-speed isolated driving chip U2, it is described on
The pin VCC1 of the pin VCC1 and lower bridge arm high-speed isolated driving chip U2 of bridge arm high-speed isolated driving chip U1, which are all connected with, to patrol
Collect power supply, the pin of the pin GND1 and lower bridge arm high-speed isolated driving chip U2 of the upper bridge arm high-speed isolated driving chip U1
GND1 is connect with GND, and the pin GND2 and lower bridge arm high-speed isolated of the upper bridge arm high-speed isolated driving chip U1 drives core
The pin GND2 of piece U2 is connected with GND-2, pin IN- and the lower bridge arm high speed of the upper bridge arm high-speed isolated driving chip U1
The pin IN- of isolation drive chip U2 is all connected with GND；
The outlet side Uo+ of the pin VCC2 connection power supply module PM1 of the lower bridge arm high-speed isolated driving chip U2, it is described
The pin VCC2 of upper bridge arm high-speed isolated driving chip U1 is connect with bootstrapping power supply circuit；The upper bridge arm high-speed isolated drives core
The output terminals A 0 of the pin IN+ connection logic gate level translation circuit U T1 of piece U1；The lower bridge arm high-speed isolated driving chip U2
Pin IN+ connection logic gate level translation circuit U T1 1 end of output terminals A.
5. a kind of SiC MOSFET drive circuit system as claimed in claim 4, which is characterized in that the bootstrapping power supply circuit
Including diode DS1, the resistance R2 and bootstrap capacitor Cb1, the diode DS1 anode and power supply module being sequentially connected in series
The outlet side Uo+ connection of PM1, the both ends the bootstrap capacitor Cb1 pin with upper bridge arm high-speed isolated driving chip U1 respectively
GND2 is connected with the pin VCC2 of upper bridge arm high-speed isolated driving chip U1.
6. a kind of SiC MOSFET drive circuit system as claimed in claim 5, which is characterized in that the upper bridge arm SiC
MOSFET driving circuit includes negative voltage generating circuit and driving output circuit.
7. a kind of SiC MOSFET drive circuit system as claimed in claim 6, which is characterized in that the negative voltage generating circuit
Including zener diode ZD2, electrolytic capacitor CT1 and resistance R3, the zener diode ZD2 cathode and upper bridge arm SiC MOSFET
The source electrode of switching tube S1 connects, and the zener diode ZD2 anode is connect with GND-2, and the electrolytic capacitor CT1 is connected in parallel on pressure stabilizing
On diode ZD2, the one end the resistance R3 is connected on the node between resistance R2 and bootstrap capacitor Cb1, and the resistance R3 is another
One end is connect with electrolytic capacitor CT1, forms charge circuit.
8. a kind of SiC MOSFET drive circuit system as claimed in claim 7, which is characterized in that the driving output circuit
Including triode Q1, gate pole bleed-off circuit resistance R4, low value capacitance C3 and zener diode ZD1, the triode Q1 base stage is logical
It crosses resistance R5 to connect with the OUT- of upper bridge arm high-speed isolated driving chip U1, the triode Q1 emitting stage and lower bridge arm SiC
Switch mosfet pipe S2 grid is connected, and the triode Q1 collector accesses the source electrode of upper bridge arm SiC switch mosfet pipe S1；
The gate pole bleed-off circuit resistance R4, low value capacitance C3 and zener diode ZD1 are connected in parallel on bridge arm SiC MOSFET respectively and open
Between the grid and source electrode for closing pipe S1.
9. a kind of SiC MOSFET drive circuit system as claimed in claim 4, which is characterized in that the upper bridge arm SiC
Switch mosfet pipe S1 grid is also connected with open resistance Rg1 and shutdown resistance Rg2, the open resistance Rg1 other end connection
The pin OUT+ of upper bridge arm high-speed isolated driving chip U1, described shutdown one end resistance Rg2 and upper bridge arm high-speed isolated drive core
The pin OUT- connection of piece U1, the shutdown resistance Rg2 other end be connected to bridge arm SiC switch mosfet pipe S1 grid and
Between open resistance Rg1.
10. a kind of SiC MOSFET drive circuit system as described in any one of claims 1-9, which is characterized in that described
Upper bridge arm SiC MOSFET driving circuit is identical with lower bridge arm SiC MOSFET driving circuit structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821150342.1U CN209001922U (en) | 2018-07-19 | 2018-07-19 | A kind of SiC MOSFET drive circuit system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821150342.1U CN209001922U (en) | 2018-07-19 | 2018-07-19 | A kind of SiC MOSFET drive circuit system |
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| CN209001922U true CN209001922U (en) | 2019-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821150342.1U Expired - Fee Related CN209001922U (en) | 2018-07-19 | 2018-07-19 | A kind of SiC MOSFET drive circuit system |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111464005A (en) * | 2020-04-26 | 2020-07-28 | 湖南大学 | SiC power tube driving circuit with active crosstalk suppression function and control method |
| WO2021098173A1 (en) * | 2019-11-18 | 2021-05-27 | 阳光电源股份有限公司 | Driver circuit of power conversion device and application device thereof |
| CN113141103A (en) * | 2021-04-27 | 2021-07-20 | 微山县微山湖微电子产业研究院有限公司 | Voltage conversion circuit |
| CN114578119A (en) * | 2022-03-29 | 2022-06-03 | 合肥工业大学 | Current measurement system based on influence of dynamic and static parameters of parallel SiC MOSFET |
| CN115037129A (en) * | 2022-06-17 | 2022-09-09 | 合肥工业大学 | Control circuit based on parallel current sharing of SiC MOSFET |
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2018
- 2018-07-19 CN CN201821150342.1U patent/CN209001922U/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021098173A1 (en) * | 2019-11-18 | 2021-05-27 | 阳光电源股份有限公司 | Driver circuit of power conversion device and application device thereof |
| JP2022544998A (en) * | 2019-11-18 | 2022-10-24 | サングロー パワー サプライ カンパニー リミテッド | Drive circuit for power conversion device and its application device |
| AU2020388721B2 (en) * | 2019-11-18 | 2023-04-27 | Sungrow Power Supply Co., Ltd. | Driver circuit of power conversion device and application device thereof |
| JP7305033B2 (en) | 2019-11-18 | 2023-07-07 | サングロー パワー サプライ カンパニー リミテッド | Drive circuit for power conversion device and its application device |
| CN111464005A (en) * | 2020-04-26 | 2020-07-28 | 湖南大学 | SiC power tube driving circuit with active crosstalk suppression function and control method |
| CN111464005B (en) * | 2020-04-26 | 2021-04-02 | 湖南大学 | SiC power tube driving circuit with active crosstalk suppression function and control method |
| CN113141103A (en) * | 2021-04-27 | 2021-07-20 | 微山县微山湖微电子产业研究院有限公司 | Voltage conversion circuit |
| CN114578119A (en) * | 2022-03-29 | 2022-06-03 | 合肥工业大学 | Current measurement system based on influence of dynamic and static parameters of parallel SiC MOSFET |
| CN114578119B (en) * | 2022-03-29 | 2024-04-12 | 合肥工业大学 | Current measurement system based on parallel SiC MOSFET dynamic-static parameter influence |
| CN115037129A (en) * | 2022-06-17 | 2022-09-09 | 合肥工业大学 | Control circuit based on parallel current sharing of SiC MOSFET |
| CN115037129B (en) * | 2022-06-17 | 2024-03-05 | 合肥工业大学 | Control circuit based on parallelly connected flow equalization of SiC MOSFET |
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