CN111357179A - Bridge type silicon carbide field effect tube driving circuit - Google Patents
Bridge type silicon carbide field effect tube driving circuit Download PDFInfo
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- CN111357179A CN111357179A CN201980005670.3A CN201980005670A CN111357179A CN 111357179 A CN111357179 A CN 111357179A CN 201980005670 A CN201980005670 A CN 201980005670A CN 111357179 A CN111357179 A CN 111357179A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The embodiment of the application discloses a bridge-type silicon carbide field effect tube driving circuit, which comprises a first silicon carbide field effect tube circuit, a second silicon carbide field effect tube circuit, a first driving module, a second driving module, a driving chip and a weak level control module; first carborundum field effect transistor circuit respectively with first drive module drive chip with second carborundum field effect transistor circuit electric connection, second carborundum field effect transistor circuit respectively with second drive module with drive chip electric connection, drive chip with weak level control module electric connection. By adopting the embodiment of the application, the silicon carbide field effect tube can be quickly turned off without a complex negative pressure driving circuit, so that the complexity of the circuit is reduced, and the applicability of the circuit is improved.
Description
Technical Field
The invention relates to the technical field of power supplies and power electronics, in particular to a bridge type silicon carbide field effect tube driving circuit.
Background
With the continuous development of the switching power supply technology, the requirements on the switching power supply in the market are higher and higher, and the requirements are not only to be safe, reliable and efficient, but also to be minimum in size. The miniaturization of the volume requires higher power density, and the switching tube is used as a core component of the switching power supply, so that the loss is required to be minimum, the voltage resistance is required to be higher, and the performance is required to be better. Silicon carbide MOS pipe compares in traditional silicon MOS pipe to higher withstand voltage, lower on-resistance, minimum junction capacitance has received more and more power supply producer's favor, especially in high-power, in order to compromise the volume, often switching frequency is all than higher, and traditional silicon MOS pipe junction capacitance is great, and it is slower to turn off, and under high switching frequency operating condition, MOS pipe turn-off loss is very big, and silicon carbide has become the best choice this moment. However, because the conduction threshold voltage of the silicon carbide MOS tube is low, the reliable shutoff can be ensured only by giving GS negative pressure of about-4V to-2V when the silicon carbide MOS tube is shut down. Particularly, the silicon carbide used in the bridge-type upper and lower tubes is often complex in driving circuit, so that not only is a negative voltage circuit additionally added, but also the problem that the upper and lower tubes are not grounded is also existed.
Disclosure of Invention
The embodiment of the application provides a bridge type silicon carbide field effect transistor drive circuit, aims at solving the problem that a silicon carbide field effect transistor drive circuit needs to additionally increase a negative voltage circuit to turn off the silicon carbide field effect transistor in the prior art, and can realize the quick turn-off of the silicon carbide field effect transistor without a complex negative voltage drive circuit by adopting the embodiment of the application, thereby reducing the complexity of the circuit and improving the applicability of the circuit.
In a first aspect, an embodiment of the present application provides a bridge-type silicon carbide field effect transistor driving circuit, where the circuit includes a first silicon carbide field effect transistor circuit, a second silicon carbide field effect transistor circuit, a first driving module, a second driving module, a driving chip, and a weak level control module;
the first silicon carbide field effect tube circuit is electrically connected with the first driving module, the driving chip and the second silicon carbide field effect tube circuit respectively, the second silicon carbide field effect tube circuit is electrically connected with the second driving module and the driving chip respectively, and the driving chip is electrically connected with the weak level control module;
the weak level control module is used for controlling the driving chip so that the driving chip can control the driving signals output by the first driving module and the second driving module;
the driving chip is used for inputting a first driving signal output by the first driving module into the first silicon carbide field effect tube circuit to control the connection and disconnection of the first silicon carbide field effect tube and inputting a second driving signal output by the second driving module into the second silicon carbide field effect tube circuit to control the connection and disconnection of the second silicon carbide field effect tube, wherein the first driving signal comprises a first positive-pressure driving signal and a first negative-pressure driving signal, the first positive-pressure driving signal is used for driving the first silicon carbide field effect tube to be connected, the first negative-pressure driving signal is used for connecting and disconnecting the first silicon carbide field effect tube, the second driving signal comprises a second positive-pressure driving signal and a second negative-pressure driving signal, the second positive-pressure driving signal is used for driving the second silicon carbide field effect tube to be connected, the second negative pressure driving signal is used for turning off the second silicon carbide field effect tube.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the first silicon carbide field effect transistor circuit includes a first silicon carbide field effect transistor Q1, a resistor R11, a resistor R12, a resistor R13, and a diode D1;
the second silicon carbide field effect transistor circuit comprises a second silicon carbide field effect transistor Q2, a resistor R21, a resistor R22, a resistor R23 and a diode D2;
the drain of the first silicon carbide field effect transistor Q1 is connected to a power supply connection VBUS, and is configured to provide a preset voltage signal for the first silicon carbide field effect transistor Q1; one end of the resistor R11 is connected to the gate of the first silicon carbide field effect transistor Q1, the other end of the resistor R11 is connected to the positive terminal of the diode D1, the negative terminal of the diode D1 is connected to the driving chip, one end of the resistor R12 is connected to one end of the resistor R11, the other end of the resistor R12 is connected to the negative terminal of the diode D1, one end of the resistor R13 is connected to one end of the resistor R12, and the other end of the resistor R13 is connected to the first driving module; the drain electrode of second carborundum field effect transistor Q2 with first carborundum field effect transistor Q1's source electrode is connected, second carborundum field effect transistor Q2's source ground, again, resistance R21's one end with second carborundum field effect transistor Q2's grid is connected, resistance R21's the other end with diode D2's positive terminal is connected, diode D2's negative pole end again with drive chip connects, resistance R22's one end with resistance R21's one end is connected, resistance R22's the other end with diode D2's negative pole end is connected, again, resistance R23's one end with resistance R22's one end is connected, resistance R23's the other end with the second drive module is connected.
With reference to the first aspect or the first possible implementation manner of the first aspect, in a second possible implementation manner of the first aspect, the first driving module includes a first input terminal, a first forward converter, and a first driving output circuit, which are connected in sequence, where the first input terminal is configured to input a first signal into the first forward converter, and the first forward converter is configured to boost the first signal and transmit the boosted first signal to the first driving output circuit to output the first driving signal.
With reference to the second possible implementation manner of the first aspect, in a third possible implementation manner of the first aspect, the first forward converter includes a magnetic reset module, a two-tap step-up transformer, a third fet, and a pulse driving signal input terminal, where one end of the magnetic reset module is electrically connected to one end of a primary side of the two-tap step-up transformer, the other end of the magnetic reset module is electrically connected to the other end of the primary side of the two-tap step-up transformer, the other end of the primary side of the two-tap step-up transformer is electrically connected to a drain of the third fet, a source of the third fet is grounded, the pulse driving signal input terminal is electrically connected to a gate of the third fet, and the pulse driving signal input terminal is used to input a first control signal for controlling the third fet to be turned on and off, the magnetic reset module is used for demagnetizing the double-tap boosting transformer when the third field effect transistor is cut off, and the double-tap boosting transformer is used for transmitting the first signal to the first drive output circuit to output the first drive signal after boosting.
With reference to the third possible implementation manner of the first aspect, in a fourth possible implementation manner of the first aspect, when the first control signal is at a high level, the third fet is turned on, and the first signal passes through the primary side of the two-tap step-up transformer, and then transfers signal energy to the secondary side of the two-tap step-up transformer for output.
With reference to the fourth possible implementation manner of the first aspect, in a fifth possible implementation manner of the first aspect, when the first control signal is at a low level, the third fet is turned off, and the double-tap step-up transformer is demagnetized by the magnetic reset module.
With reference to the third possible implementation manner of the first aspect, the fourth possible implementation manner of the first aspect, or the fifth possible implementation manner of the first aspect, in a sixth possible implementation manner of the first aspect, the first driving output circuit includes a first positive driving output circuit and a first negative driving output circuit;
the first forward driving output circuit comprises a first diode, N capacitors, a first resistor and a first voltage-regulator tube; the N capacitors are connected with the first resistor in parallel, the negative electrode of the first voltage-stabilizing tube is connected with one end of the first resistor, the positive electrode of the first voltage-stabilizing tube is electrically connected with the other end of the first resistor, the negative electrode of the first diode is electrically connected with one end of the first resistor, the positive electrode of the first diode is electrically connected with the first positive electrode end of the secondary side of the double-tap step-up transformer, and N is an integer greater than zero;
the first negative-direction driving output circuit comprises a second diode, M capacitors and a second resistor; m the electric capacity with second resistance parallel connection, the one end of second resistance with the second positive terminal electric connection of two taking out first step-up transformer's vice limit, simultaneously, the one end of second resistance with the other end electric connection of first resistance, the other end of second resistance with the positive terminal electric connection of second diode, the negative pole end of second diode with the negative pole end electric connection of two taking out first step-up transformer's vice limit, wherein, M is for being greater than zero integer.
With reference to the sixth possible implementation manner of the first aspect, in a seventh possible implementation manner of the first aspect, the driver chip includes a first driving signal input terminal, a first driving signal output terminal, a first ground terminal, and a first weak level control input terminal; first drive signal input with first positive drive output circuit electric connection, first drive signal output with first silicon carbide field effect transistor circuit electric connection, first earthing terminal with first negative drive output circuit electric connection, first weak level control input is used for inputing weak level control signal, weak level control signal is used for control switch on and turn-off between first drive signal input, first drive signal output and the first earthing terminal are in order to control switch on and turn-off of first silicon carbide field effect transistor.
With reference to the seventh possible implementation manner of the first aspect, in an eighth possible implementation manner of the first aspect, when the weak level control signal is at a high level, the first driving signal input end and the first driving signal output end are turned on, the first positive voltage driving signal output by the first positive direction driving output circuit is input to the driving chip through the first driving signal input end, and is output to the gate of the first silicon carbide field effect transistor in the first silicon carbide field effect transistor circuit by the first driving signal output end, and the first silicon carbide field effect transistor is turned on.
With reference to the seventh possible implementation manner of the first aspect or the eighth possible implementation manner of the first aspect, in a ninth possible implementation manner of the first aspect, when the weak level control signal is at a low level, the first driving signal output end and the first ground end are turned on, the first negative driving signal output by the first negative driving output circuit is transmitted to a gate of the first silicon carbide field effect transistor in the first silicon carbide field effect transistor circuit, is input to the driving chip through the first driving signal output end, and returns to the first negative driving output circuit through the first ground end, and a signal with a direction opposite to that of the first positive driving signal is formed at the gate of the first silicon carbide field effect transistor.
To sum up, this application embodiment provides a bridge type carborundum field effect transistor drive circuit, aims at solving among the prior art carborundum field effect transistor drive circuit and need additionally increase the problem that negative voltage circuit shut off carborundum field effect transistor, adopts this application embodiment can realize the quick shutoff of carborundum field effect transistor without complicated negative voltage drive circuit to the complexity of circuit has been reduced, the suitability of circuit has been improved.
Drawings
The drawings to be used in the embodiments of the present application will be described below.
Fig. 1 is a schematic structural diagram of a bridge-type sic fet driving circuit according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of the first silicon carbide field effect transistor circuit and the second silicon carbide field effect transistor circuit shown in fig. 1;
FIG. 3 is a schematic structural diagram of the first driving module shown in FIG. 1;
FIG. 4 is a schematic diagram of the first positive-direction driving output circuit and the second negative-direction driving output circuit shown in FIG. 3;
fig. 5 is a schematic structural diagram of the driving chip and the weak level control module shown in fig. 1.
Detailed Description
The embodiment of the application provides a bridge type silicon carbide field effect transistor drive circuit, aims at solving the problem that a silicon carbide field effect transistor drive circuit needs to additionally increase a negative voltage circuit to turn off the silicon carbide field effect transistor in the prior art, and can realize the quick turn-off of the silicon carbide field effect transistor without a complex negative voltage drive circuit by adopting the embodiment of the application, thereby reducing the complexity of the circuit and improving the applicability of the circuit.
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a bridge-type sic fet driving circuit according to an embodiment of the present disclosure, where the bridge-type sic fet driving circuit includes a first sic fet circuit 101, a second sic fet circuit 102, a first driving module 103, a second driving module 104, a driving chip 105, and a weak level control module 106. The first silicon carbide field effect transistor circuit 101 is electrically connected with the first driving module 103, the driving chip 105 and the second silicon carbide field effect transistor circuit 102, the second silicon carbide field effect transistor circuit 102 is electrically connected with the second driving module 104 and the driving chip 105, the first driving module 103 and the second driving module 104 are electrically connected with the driving chip 105, and the driving chip 105 is electrically connected with the weak level control module 106.
In a specific embodiment, the weak level control module 106 is configured to control the driving chip 105 so that the driving chip 105 can control the driving signals output by the first driving module 103 and the second driving module 104; the driving chip 105 is configured to input a first driving signal output by the first driving module 103 into the first silicon carbide fet circuit 101 to control the first silicon carbide fet to be turned on and off, and is used for inputting a second driving signal output by the second driving module 104 into the second silicon carbide fet circuit 102 to control the second silicon carbide fet to be turned on and off, wherein the first drive signal comprises a first positive voltage drive signal and a first negative voltage drive signal, the first positive-pressure driving signal is used for driving the first silicon carbide field effect tube to be conducted, the first negative-pressure driving signal is used for switching off the first silicon carbide field effect tube, the second driving signal comprises a second positive-pressure driving signal and a second negative-pressure driving signal, the second positive-pressure driving signal is used for driving the second silicon carbide field effect tube to be conducted, and the second negative-pressure driving signal is used for being switched off the second silicon carbide field effect tube.
Referring to fig. 2, the first sic fet circuit 101 includes a first sic fet Q1, a resistor R11, a resistor R12, a resistor R13, and a diode D1. The drain of the first silicon carbide fet Q1 is connected to the power supply connection VBUS, and is configured to provide a preset voltage signal to the first silicon carbide fet Q1, where the preset voltage may be 5V or 12V, and so on; one end of a resistor R11 is connected with the gate of the first silicon carbide field effect transistor Q1, the other end of the resistor R11 is connected with the positive electrode end of the diode D1, the negative electrode end of the diode D1 is connected with the driving chip 105, one end of a resistor R12 is connected with one end of a resistor R11, the other end of the resistor R12 is connected with the negative electrode end of the diode D1, one end of a resistor R13 is connected with one end of the resistor R12, and the other end of the resistor R13 is connected with the first driving module. The connection is such that when it is necessary to drive the first silicon carbide field effect transistor Q1 to be turned on, the positive voltage driving signal output by the first driving module 103 is output through the driving chip 105, and is input to the gate of the first silicon carbide field effect transistor Q1 through the resistor R12, so that the first silicon carbide field effect transistor Q1 is turned on, when it is necessary to turn off the first silicon carbide field effect transistor Q1, the first driving module 103 outputs the negative voltage driving signal, the negative voltage driving signal flows to the gate of the first silicon carbide field effect transistor Q1 through the resistor R13, a signal opposite to the signal direction when the first silicon carbide field effect transistor Q1 is turned on is formed at the gate of the first silicon carbide field effect transistor Q1, so that the first silicon carbide field effect transistor Q1 can be turned off quickly.
The second silicon carbide fet circuit 102 includes a second silicon carbide fet Q2, a resistor R21, a resistor R22, a resistor R23, and a diode D2. The drain electrode of the second silicon carbide field effect tube Q2 is connected with the source electrode of the first silicon carbide field effect tube Q1, and the source electrode of the second silicon carbide field effect tube Q2 is grounded, so that the first silicon carbide field effect tube Q1 and the second silicon carbide field effect tube Q2 are grounded through the connection, the circuit is simplified, the complexity of the circuit is reduced, and the applicability of the circuit is improved; one end of the resistor R21 is connected to the gate of the second silicon carbide fet Q2, the other end of the resistor R21 is connected to the positive terminal of the diode D2, the negative terminal of the diode D2 is connected to the driver chip 105, one end of the resistor R22 is connected to one end of the resistor R21, the other end of the resistor R22 is connected to the negative terminal of the diode D2, one end of the resistor R23 is connected to one end of the resistor R22, and the other end of the resistor R23 is connected to the second driver module. The connection is such that when the second silicon carbide fet Q2 needs to be driven to be turned on, the positive voltage driving signal output by the second driving module 104 is output through the driving chip 105, and then is input to the gate of the second silicon carbide fet Q2 through the resistor R22, so that the second silicon carbide fet Q2 is turned on, when the second silicon carbide fet Q2 needs to be turned off, the second driving module 104 outputs the negative voltage driving signal, the control signal flows to the gate of the second silicon carbide fet Q2 through the resistor R23, a signal opposite to the signal direction when the second silicon carbide fet Q2 is turned on is formed at the gate of the second silicon carbide fet Q2, so that the second silicon carbide fet Q2 can be turned off quickly.
Referring to fig. 3, the first driving module 103 includes an input terminal 1031, a forward converter 1032 and a driving output circuit 1033; wherein, the input terminal 1031 is connected to the forward converter 1032 for inputting a preset voltage signal to the forward converter, the preset voltage may be 12V or the like; the forward converter 1032 is connected to the drive output circuit 1033, and the forward converter 1032 is configured to boost a signal input by the input terminal 1031 and transfer the boosted signal to the drive output circuit 1033 for output.
Specifically, the forward converter 1032 includes a resistor R31, a capacitor C3, a double-tap step-up transformer T1, a field-effect transistor Q3, a pulse driving signal input end PWM1, a resistor R32, and a resistor R33, where the resistor R31 and the capacitor C3 constitute a magnetic reset module, a secondary side of the double-tap step-up transformer T1 includes a first positive terminal, a second positive terminal, and a negative terminal, the first positive terminal is used to output a forward control signal, i.e., a positive voltage driving signal, for driving the first silicon carbide field-effect transistor to be turned on, the second positive terminal is used to output a reverse control signal, i.e., a negative voltage driving signal, for rapidly turning off the first silicon carbide field-effect transistor, and the negative voltage driving signal is returned to the negative terminal of the double-tap step-up transformer T1 by the driving chip 105 through the first silicon carbide field-effect transistor. Specifically, the primary side input end of the double-tap boosting transformer T1 is connected to the input end 1031, the primary side output end of the double-tap boosting transformer T1 is connected to the drain of the fet Q3, the gate of the fet Q3 is connected to the resistor R32 and then to the pulse drive signal input end PWM1, the source of the fet Q3 is grounded, the resistor R33 is connected to the gate of the fet Q3 and then to the ground, which plays a role in current limiting, one end of the resistor R31 is connected to the primary side input end of the double-tap boosting transformer T1, the other end of the resistor R31 is connected to one end of the capacitor C3, and the other end of the capacitor C3 is connected to the primary side output end of the double-tap boosting transformer T1. When the driving signal input by the pulse driving signal input end PWM1 is at a high level, the field effect transistor Q3 is turned on, and the signal input by the input end 1031 is boosted by the double tap step-up transformer T1 and then output; when the driving signal input by the pulse driving signal input end PWM1 is at low level, the field effect transistor Q3 is turned off, and at the moment, the double-tap boosting transformer T1 is demagnetized through the magnetic reset module to avoid saturation, so that stable power supply voltage is provided for the driving circuit.
Specifically, the driving output circuit 1033 includes a first positive driving output circuit and a first negative driving output circuit, and referring to fig. 4, the first positive driving output circuit includes a diode D3, N capacitors, a resistor R41, and a zener diode D5, in this embodiment, N is taken as 5, and the 5 capacitors are respectively labeled as C4, C5, C6, C7, and C8; the first negative-driving output circuit includes a diode D4, M capacitors, and a resistor R42, where M is 3 in this embodiment, and the 3 capacitors are respectively labeled as C9, C10, and C11. The anode of the diode D3 is connected to the first anode of the secondary side of the dual tap step-up transformer T1, the cathode of the capacitor C4, the capacitor C5, the capacitor C6, the resistor R41, the zener diode D5, the capacitor C7 and the capacitor C8 are connected in parallel, specifically, the cathode of the zener diode D5 is connected to the cathode of the diode D3, the anode of the zener diode D5 is connected to the second anode of the secondary side of the dual tap step-up transformer T1, the capacitor C9, the capacitor C10, the capacitor C11 and the resistor R42 are connected in parallel, meanwhile, one end of the capacitor C9, the capacitor C10, the capacitor C11 and the resistor R42 is connected to the second anode of the secondary side of the dual tap step-up transformer T1, the other end of the capacitor C9, the capacitor C10, the capacitor C11 and the resistor R42 is connected to the anode of the diode D4, and the cathode of the diode D4 is connected to the secondary side of the dual tap-step-up transformer T1. The capacitor C4, the capacitor C5, the capacitor C6, the capacitor C7, the capacitor C8, the capacitor C9, the capacitor C10 and the capacitor C11 are used for energy storage and filtering, the resistor R41 and the resistor R42 are used for current limiting, and the voltage regulator tube D5 is used for keeping voltage stable.
It should be noted that, the structural composition, the connection mode, the corresponding circuits, and the functions of the components of the second driving module 104 and the first driving module 103 may be completely the same, the second driving module 104 also includes an input terminal 1031, a forward converter 1032 and a driving output circuit 1033, the driving output circuit 1033 also includes a forward driving output circuit and a reverse driving output circuit, and for convenience of distinction, the forward driving output circuit and the reverse driving output circuit included in the second driving module 104 are respectively referred to as a second forward driving output circuit and a second reverse driving output circuit.
Referring to fig. 5, the driving chip 105 includes 16 pins, where pin 1 is used for inputting a control signal to control the on and off among pin 16, pin 15 and pin 14, pin 16 is an input terminal of the driving signal, pin 15 is an output terminal of the signal, and pin 14 is a ground terminal; the pin 2 is used for inputting a control signal to control the on and off among the pin 11, the pin 10 and the pin 9, the pin 11 is an input end of a driving signal, the pin 10 is an output end of the signal, and the pin 9 is a ground end; pins 13 and 12 are not particularly useful and are typically floating, with pins 3 and 8 being used to power the driver chip 105, pin 4 being used to ground, and pin 5 being an enable pin for controlling the enabling and disabling of the chip. The weak level control module 106 includes control signal input terminals PWM2 and PWM3, a ground terminal GND, a power supply input terminal VIN, six resistors respectively labeled as R51, R52, R53, R54, R55, and R56, and five capacitors respectively labeled as C12, C13, C14, C15, and C16. Specifically, a control signal input end PWM2 is connected to a resistor R53 and then connected to a pin 1 for inputting a first path of control signal, a control signal input end PWM3 is connected to a resistor R54 and then connected to a pin 2 for inputting a second path of control signal, a pin 4 and a pin 5 are connected to a ground terminal GND, a power supply input end VIN is connected to a resistor R55 and then connected to a pin 3 for supplying power to the driving chip 105, the rest capacitors and resistors are respectively connected to corresponding pins and then grounded, the capacitors are mainly used for filtering, and the resistors are mainly used for current limiting. Pin 16 is connected to the first positive drive output circuit, pin 15 is connected to the first silicon carbide field effect transistor circuit 101, the first silicon carbide field effect transistor circuit 101 is connected to the first negative drive output circuit, and pin 14 is connected to the first negative drive output circuit; pin 13 and pin 12 are suspended; the pin 11 is connected with the second positive driving output circuit, the pin 10 is connected with the second silicon carbide field effect tube circuit 102, the second silicon carbide field effect tube circuit 102 is connected with the second negative driving output circuit, and the pin 9 is connected with the second negative driving output circuit.
When the control signal input by the control signal input end PWM2 is at a high level, the pin 16 and the pin 15 are closed and conducted, the positive voltage driving signal output by the first positive direction driving output circuit is input to the driving chip 105 through the pin 16, and is output to the first silicon carbide field effect transistor circuit 101 through the pin 15, so that the first silicon carbide field effect transistor is conducted; when the control signal input by the control signal input end PWM2 is at a low level, the pin 16 and the pin 15 are disconnected, the pin 15 and the pin 14 are closed and connected, the negative-voltage driving signal output by the first negative-direction driving output circuit passes through the first silicon carbide field effect transistor circuit 101, then is input into the driving chip 105 through the pin 15, and is output to the first negative-direction driving output circuit through the pin 14 to form a loop, thereby implementing fast turn-off of the first silicon carbide field effect transistor.
Similarly, when the control signal input by the control signal input terminal PWM3 is at a high level, the pin 11 and the pin 10 are turned on, the positive voltage driving signal output by the second forward driving output circuit is input to the driving chip 105 through the pin 11, and is output to the second silicon carbide fet circuit 102 through the pin 10, so that the second silicon carbide fet is turned on; when the control signal input by the control signal input end PWM3 is at a low level, the pin 11 and the pin 10 are disconnected, the pin 10 and the pin 9 are closed and connected, the negative-voltage driving signal output by the second negative-direction driving output circuit passes through the second silicon carbide field effect transistor circuit 102, then the negative-voltage driving signal is input to the driving chip 105 through the pin 10, and then the negative-voltage driving signal is output to the second negative-direction driving output circuit through the pin 9 to form a loop, so that the second silicon carbide field effect transistor is rapidly turned off.
To sum up, this application embodiment provides a bridge type carborundum field effect transistor drive circuit, aims at solving among the prior art carborundum field effect transistor drive circuit and need additionally increase the problem that negative voltage circuit shut off carborundum field effect transistor, adopts this application embodiment can realize the quick shutoff of carborundum field effect transistor without complicated negative voltage drive circuit to the complexity of circuit has been reduced, the suitability of circuit has been improved.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Claims (10)
1. A bridge type silicon carbide field effect tube driving circuit is characterized by comprising a first silicon carbide field effect tube circuit, a second silicon carbide field effect tube circuit, a first driving module, a second driving module, a driving chip and a weak level control module;
the first silicon carbide field effect tube circuit is electrically connected with the first driving module, the driving chip and the second silicon carbide field effect tube circuit respectively, the second silicon carbide field effect tube circuit is electrically connected with the second driving module and the driving chip respectively, and the driving chip is electrically connected with the weak level control module;
the weak level control module is used for controlling the driving chip;
the driving chip is used for inputting a first driving signal output by the first driving module into the first silicon carbide field effect tube circuit to control the connection and disconnection of the first silicon carbide field effect tube and inputting a second driving signal output by the second driving module into the second silicon carbide field effect tube circuit to control the connection and disconnection of the second silicon carbide field effect tube, wherein the first driving signal comprises a first positive-pressure driving signal and a first negative-pressure driving signal, the first positive-pressure driving signal is used for driving the first silicon carbide field effect tube to be connected, the first negative-pressure driving signal is used for connecting and disconnecting the first silicon carbide field effect tube, the second driving signal comprises a second positive-pressure driving signal and a second negative-pressure driving signal, the second positive-pressure driving signal is used for driving the second silicon carbide field effect tube to be connected, the second negative pressure driving signal is used for turning off the second silicon carbide field effect tube.
2. The bridge silicon carbide FET driver circuit of claim 1,
the first silicon carbide field effect transistor circuit comprises a first silicon carbide field effect transistor Q1, a resistor R11, a resistor R12, a resistor R13 and a diode D1;
the second silicon carbide field effect transistor circuit comprises a second silicon carbide field effect transistor Q2, a resistor R21, a resistor R22, a resistor R23 and a diode D2;
the drain of the first silicon carbide field effect transistor Q1 is connected to a power supply connection VBUS, and is configured to provide a preset voltage signal for the first silicon carbide field effect transistor Q1; one end of the resistor R11 is connected with the gate of the first silicon carbide field effect transistor Q1, and the other end of the resistor R11 is connected with the positive end of the diode D1; the negative electrode end of the diode D1 is connected with the driving chip; one end of the resistor R12 is connected with one end of the resistor R11, and the other end of the resistor R12 is connected with the negative electrode end of the diode D1; one end of the resistor R13 is connected with one end of the resistor R12, and the other end of the resistor R13 is connected with the first driving module; the drain electrode of second silicon carbide field effect transistor Q2 with first silicon carbide field effect transistor Q1's source electrode is connected, second silicon carbide field effect transistor Q2's source ground, resistance R21's one end with second silicon carbide field effect transistor Q2's grid is connected, resistance R21's the other end with diode D2's positive terminal is connected, diode D2's negative pole end with drive chip connects, resistance R22's one end with resistance R21's one end is connected, resistance R22's the other end with diode D2's negative pole end is connected, resistance R23's one end with resistance R22's one end is connected, resistance R23's the other end with the second drive module is connected.
3. A bridge silicon carbide FET driver circuit according to claim 1 or claim 2,
the first driving module comprises a first input end, a first forward converter and a first driving output circuit which are sequentially connected, wherein the first input end is used for inputting a first signal into the first forward converter, and the first forward converter is used for boosting the first signal and then transmitting the first signal to the first driving output circuit to output the first driving signal.
4. The bridge silicon carbide fet driving circuit according to claim 3, wherein the first forward converter comprises a magnetic reset module, a two-tap step-up transformer, a third fet, and a pulse driving signal input terminal, wherein one end of the magnetic reset module is electrically connected to one end of a primary side of the two-tap step-up transformer, the other end of the magnetic reset module is electrically connected to the other end of the primary side of the two-tap step-up transformer, the other end of the primary side of the two-tap step-up transformer is electrically connected to a drain of the third fet, a source of the third fet is grounded, the pulse driving signal input terminal is electrically connected to a gate of the third fet, and the pulse driving signal input terminal is used for inputting a first control signal for controlling the third fet to be turned on and off, the magnetic reset module is used for demagnetizing the double-tap boosting transformer when the third field effect transistor is cut off, and the double-tap boosting transformer is used for transmitting the first signal to the first drive output circuit to output the first drive signal after boosting.
5. The bridge silicon carbide fet driving circuit of claim 4, wherein the third fet is turned on when the first control signal is at a high level, and the first signal passes through the primary side of the two-tap step-up transformer and transfers signal energy to the secondary side of the two-tap step-up transformer for output.
6. The bridge silicon carbide fet driving circuit according to claim 5, wherein the third fet is turned off when the first control signal is at a low level, and the double-tap step-up transformer is demagnetized by the magnetic reset module.
7. The bridge silicon carbide fet driving circuit of claims 4-6, wherein the first driving output circuit comprises a first positive driving output circuit and a first negative driving output circuit;
the first forward driving output circuit comprises a first diode, N capacitors, a first resistor and a first voltage-regulator tube; the N capacitors are connected with the first resistor in parallel, the negative electrode of the first voltage-stabilizing tube is connected with one end of the first resistor, the positive electrode of the first voltage-stabilizing tube is electrically connected with the other end of the first resistor, the negative electrode of the first diode is electrically connected with one end of the first resistor, the positive electrode of the first diode is electrically connected with the first positive electrode end of the secondary side of the double-tap step-up transformer, and N is an integer greater than zero;
the first negative-direction driving output circuit comprises a second diode, M capacitors and a second resistor; m the electric capacity with second resistance parallel connection, the one end of second resistance with the second positive terminal electric connection of two taking out first step-up transformer's vice limit, simultaneously, the one end of second resistance with the other end electric connection of first resistance, the other end of second resistance with the positive terminal electric connection of second diode, the negative pole end of second diode with the negative pole end electric connection of two taking out first step-up transformer's vice limit, wherein, M is for being greater than zero integer.
8. The bridge silicon carbide fet driving circuit of claim 7, wherein the driver chip comprises a first driving signal input terminal, a first driving signal output terminal, a first ground terminal, and a first weak level control input terminal; first drive signal input with first positive drive output circuit electric connection, first drive signal output with first silicon carbide field effect transistor circuit electric connection, first earthing terminal with first negative drive output circuit electric connection, first weak level control input is used for inputing weak level control signal, weak level control signal is used for control switch on and turn-off between first drive signal input, first drive signal output and the first earthing terminal are in order to control switch on and turn-off of first silicon carbide field effect transistor.
9. The bridge silicon carbide fet driving circuit according to claim 8, wherein when the weak level control signal is at a high level, the first driving signal input terminal and the first driving signal output terminal are turned on, the first positive voltage driving signal output by the first forward driving output circuit is input to the driving chip through the first driving signal input terminal, and is output to the gate of the first silicon carbide fet in the first silicon carbide fet circuit through the first driving signal output terminal, and the first silicon carbide fet is turned on.
10. The bridge silicon carbide fet driving circuit according to claim 8 or 9, wherein when the weak level control signal is at a low level, the first driving signal output terminal is connected to the first ground terminal, the first negative driving signal output by the first negative driving output circuit is transmitted to a gate of the first silicon carbide fet in the first silicon carbide fet circuit, is input to the driving chip through the first driving signal output terminal, and returns to the first negative driving output circuit through the first ground terminal, and a signal having a direction opposite to that of the first positive driving signal is formed at the gate of the first silicon carbide fet.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/097536 WO2021012223A1 (en) | 2019-07-24 | 2019-07-24 | Bridge type silicon carbide field effect transistor driving circuit |
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| CN111357179B CN111357179B (en) | 2023-08-11 |
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| CN114362484A (en) * | 2022-01-04 | 2022-04-15 | 易事特集团股份有限公司 | High-frequency driving circuit for driving silicon carbide semiconductor field effect transistor |
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| CN204696909U (en) * | 2015-06-17 | 2015-10-07 | 华域汽车电动系统有限公司 | A kind of IGBT module driving power |
| CN108880206A (en) * | 2018-07-19 | 2018-11-23 | 西安理工大学 | A kind of bootstrap power supply formula SiC MOSFET driving circuit inhibiting bridge arm crosstalk |
| CN210246595U (en) * | 2019-07-24 | 2020-04-03 | 深圳欣锐科技股份有限公司 | Bridge type silicon carbide field effect tube driving circuit |
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| CN114362484A (en) * | 2022-01-04 | 2022-04-15 | 易事特集团股份有限公司 | High-frequency driving circuit for driving silicon carbide semiconductor field effect transistor |
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