CN208461686U - A kind of driving device applied to SiC-MOSFET - Google Patents

A kind of driving device applied to SiC-MOSFET Download PDF

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Publication number
CN208461686U
CN208461686U CN201821228025.7U CN201821228025U CN208461686U CN 208461686 U CN208461686 U CN 208461686U CN 201821228025 U CN201821228025 U CN 201821228025U CN 208461686 U CN208461686 U CN 208461686U
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resistance
capacitor
voltage
triode
circuit
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CN201821228025.7U
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张波
吴忠强
郭华为
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Zhejiang arrow network energy technology Co.,Ltd.
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Zhejiang Elong Network Energy Technology Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The utility model relates to electronic technology fields, more particularly to a kind of driving device applied to SiC-MOSFET, it include: controller, isolation circuit, driving power circuit and active clamp driving circuit, the controller, isolation circuit, active clamp driving circuit are sequentially connected, the driving power circuit is separately connected isolation circuit and active clamp driving circuit, wherein, driving power circuit includes capacitor C1, C2 of connection, C3, C4, resistance R1, R2, triode Q1, Q2, the first voltage regulation unit, the second voltage regulation unit.For the utility model the utility model has the advantages that simplifying and optimizing driving power design, raising driving power stability provides more accurate suitable driving voltage;Active driving circuit is used nearby, road surface product can be zoomed back out compared with limits, is reduced to periphery interference and coupling, is reduced parasitic parameter, greatly improve drive waveforms, improves the stability and reliability of SiC-MOSFET work.

Description

A kind of driving device applied to SiC-MOSFET
Technical field
The utility model relates to electronic technology field more particularly to a kind of driving devices applied to SiC-MOSFET.
Background technique
SiC-MOSFET, i.e. silicon carbide-Metal-Oxide Semiconductor field effect transistor.In the exploitation of SiC-MOSFET With application aspect, compared with the Si MOSFET of equal-wattage grade, SiC-MOSFET conducting resistance, switching loss are greatly reduced, Suitable for higher working frequency, separately due to its hot operation characteristic, high-temperature stability is substantially increased.
But SiC-MOSFET, since switching speed is exceedingly fast, di/dt and du/dt are very big, so very to parasitic parameter Sensitivity, switching process easily generates concussion, for the more demanding of driving circuit.The driving circuit of existing SiC-MOSFET Since stability is poor, shock range frequently results in SiC-MOSFET damage beyond specification positive-negative power limit value.
Utility model content
To solve the above problems, the utility model proposes the stability and reliability of a kind of raising SiC-MOSFET work Driving device.
A kind of driving device applied to SiC-MOSFET, comprising: controller, isolation circuit, driving power circuit and Active clamp driving circuit, the controller, isolation circuit, active clamp driving circuit are sequentially connected, the driving power electricity Road is separately connected isolation circuit and active clamp driving circuit, wherein driving power circuit include capacitor C1, C2, C3, C4, Resistance R1, R2, triode Q1, Q2, the first voltage regulation unit, the second voltage regulation unit, one end connecting triode Q1 of the capacitor C1 Collector, the other end connect capacitor C2, the collector of the other end connecting triode Q2 of the capacitor C2, in capacitor C1, C2 Both ends be also respectively connected with prime positive electricity source output terminal, prime negative electricity source output terminal, one end connecting triode of the resistance R1 The collector of Q1, the base stage of other end connecting triode Q1, the collector of one end connecting triode Q2 of the resistance R2 are another The base stage of connecting triode Q2, the base stage of the cathode connecting triode Q1 of first voltage regulation unit are held, anode is separately connected the One end of the cathode of two voltage regulation units, capacitor C1, C3 and C4, the base of the positive connecting triode Q2 of second voltage regulation unit Pole, the emitter of one end connecting triode Q1 of the capacitor C3, the other end connect the anode of the first voltage regulation unit, the capacitor The emitter of one end connecting triode Q1 of C4, the other end connect the anode of the first voltage regulation unit.
Preferably, first voltage regulation unit includes voltage-stabiliser tube ZD1, and second voltage regulation unit includes voltage-stabiliser tube ZD2, institute State the base stage of the cathode connecting triode Q1 of voltage-stabiliser tube ZD1, the cathode of anode connection voltage-stabiliser tube ZD2, the anode of voltage-stabiliser tube ZD2 The base stage of connecting triode Q2.
Preferably, first voltage regulation unit includes controllable accurate source of stable pressure ZD3, resistance R3, R4, the second pressure stabilizing list Member includes voltage-stabiliser tube ZD2, the base stage of the cathode connected to the transistor Q1 of the controllable accurate source of stable pressure ZD3, anode connection connection The cathode of voltage-stabiliser tube ZD2 is separately connected one end of resistance R3, R4, the other end connecting triode of the resistance R3 with reference to pole The emitter of Q1, the cathode of the other end connection voltage-stabiliser tube ZD2 of the resistance R4, three poles of anode connection of the voltage-stabiliser tube ZD2 The base stage of pipe Q2.
Preferably, active clamp driving circuit include capacitor C21, C22, resistance R21, R22, R23, R24, triode Q21, Q22, the resistance R22, capacitor C21, C22 are sequentially connected, the collector of the other end connecting triode Q21 of resistance R22, capacitor The collector of the other end connecting triode Q22 of C22 is also respectively connected with the output of capacitor C3, C4 at the both ends of capacitor C21, C22 The one end at end, the resistance R21 connects isolation circuit output end, and the other end is separately connected the base stage of triode Q21, triode One end of the base stage of Q22, the resistance R23 is separately connected the emitter of the emitter of triode Q21, triode Q22, the other end It is separately connected the grid of SiC-MOSFET, one end of resistance R24, the other end of the resistance R24 is separately connected SiC-MOSFET Source electrode, capacitor C21 and C22 intermediate node.
Preferably, the isolation circuit include optocoupler or magnetic every or hold every.
By using the utility model, following effect may be implemented:
Simplify and optimization driving power designs, improve driving power stability, more accurate suitable driving voltage is provided;Just Active driving circuit is closely used, road surface product can be zoomed back out compared with limits, reduces to periphery interference and coupling, reduces parasitic parameter, greatly Width improves drive waveforms, improves the stability and reliability of SiC-MOSFET work.
Detailed description of the invention
Utility model will be further described in detail below with reference to the attached drawings and specific embodiments.
Fig. 1 is integral module connection figure in the utility model embodiment one;
Fig. 2 is driving power circuit diagram in the utility model embodiment one;
Fig. 3 is active clamp driver circuit schematic diagram in the utility model embodiment one
Fig. 4 is driving power circuit diagram in the utility model embodiment two.
Specific embodiment
Below in conjunction with attached drawing, the technical solution of the utility model is further described, but the utility model and unlimited In these embodiments.
Embodiment 1
In conjunction with attached drawing 1, a kind of driving device applied to SiC-MOSFET, comprising: controller, isolation circuit, driving electricity Source circuit and active clamp driving circuit, the controller, isolation circuit, active clamp driving circuit are sequentially connected, described Driving power circuit is separately connected isolation circuit, active clamp driving circuit and SiC-MOSFET.
Control pwm signal is generated by controller, which inputs to isolation circuit primary side;There is driving power circuit on secondary side, Generating positive and negative voltage needed for the circuit adjusts driving, gives isolation circuit pair side, active clamp drive circuitry;Isolation circuit pair side The signal of primary side is passed into active clamp driving circuit, is realized to SiC-MOSFET drive control.
In conjunction with attached drawing 2, specifically, driving power circuit include capacitor C1, C2, C3, C4, resistance R1, R2, triode Q1, Q2, the first voltage regulation unit, the second voltage regulation unit, the collector of one end connecting triode Q1 of the capacitor C1, other end connection The collector of the other end connecting triode Q2 of capacitor C2, the capacitor C2, are also respectively connected with prime at the both ends of capacitor C1, C2 Positive electricity source output terminal, prime negative electricity source output terminal, the collector of one end connecting triode Q1 of the resistance R1, other end connection The base stage of triode Q1, the collector of one end connecting triode Q2 of the resistance R2, the base stage of other end connecting triode Q2, The base stage of the cathode connecting triode Q1 of first voltage regulation unit, anode are separately connected cathode, the capacitor of the second voltage regulation unit One end of one end of C1, C3 and C4, the base stage of the positive connecting triode Q2 of second voltage regulation unit, the capacitor C3 connects The emitter of triode Q1 is connect, the other end connects the anode of the first voltage regulation unit, one end connecting triode Q1 of the capacitor C4 Emitter, the other end connects the anode of the first voltage regulation unit, and the both ends of capacitor C3, C4 are respectively as driving positive supply, driving Negative supply.Wherein, the first voltage regulation unit includes voltage-stabiliser tube ZD1, and second voltage regulation unit includes voltage-stabiliser tube ZD2, the pressure stabilizing The base stage of the cathode connecting triode Q1 of pipe ZD1, the cathode of anode connection voltage-stabiliser tube ZD2, the anode connection three of voltage-stabiliser tube ZD2 The base stage of pole pipe Q2.
The positive and negative power input of the prime that capacitor C1, C2 are generated by front end power circuit respectively.Prime positive electricity on capacitor C1 By resistance R1, the suitable driving positive voltage of voltage-stabiliser tube ZD1, triode Q1 adjusting, which exports, gives capacitor C3 in source.Voltage-stabiliser tube ZD1 breakdown Voltage is V1, then the driving positive voltage value on capacitor C3 is about voltage-stabiliser tube ZD1 breakdown voltage (V1-0.7)V.Similarly, capacitor Prime negative supply on C2 adjusts suitable driving positive voltage by resistance R2, voltage-stabiliser tube ZD2, triode Q2 and exports to capacitor C3.Voltage-stabiliser tube ZD2 breakdown voltage is V2, then the driving negative supply voltage value on capacitor C4 is about voltage-stabiliser tube ZD2 breakdown voltage (V2- 0.7)V.Stable drive is adjusted to using the stabilizing voltage characteristic of voltage-stabiliser tube ZD1, ZD2, while by the positive and negative power input of the prime of fluctuation Positive and negative supply voltage output is moved, provides more accurate suitable driving voltage for active clamp driving circuit.
In conjunction with attached drawing 3, specifically, active clamp driving circuit include capacitor C21, C22, resistance R21, R22, R23, R24, Triode Q21, Q22, the resistance R22, capacitor C21, C22 are sequentially connected, the other end connecting triode Q21's of resistance R22 Collector, the collector of the other end connecting triode Q22 of capacitor C22 are also respectively connected with connection at the both ends of capacitor C21, C22 The output end of capacitor C3, C4 drive positive supply, driving negative supply, and one end of the resistance R21 connects isolation circuit output end Pwm signal is received, the other end is separately connected the base stage of the base stage of triode Q21, triode Q22, one end point of the resistance R23 The emitter of the emitter of other connecting triode Q21, triode Q22, the other end be separately connected SiC-MOSFET S1 grid, One end of resistance R24, the other end of the resistance R24 are separately connected the source electrode of SiC-MOSFET S1, in capacitor C21 and C22 Intermediate node.
Driving positive supply, driving negative supply are respectively applied to C21, and on C22, the pwm signal of optical coupling secondary edges output is sent to Resistance R21, controls triode Q21, and Q22 switch is realized and controlled the driving switch of SiC-MOSFET S1.SiC-MOSFET S1 Drive control circuit is limited in by capacitor C21, C22, resistance R22, triode Q21, in the circuit that Q22, resistance R23 are constituted, The circuit leans against SiC-MOSFET S1 nearby, and road surface product can be zoomed back out compared with limits, is reduced to periphery interference and coupling, reduction is posted Raw parameter, greatly improves drive waveforms, improves the stability and reliability of SiC-MOSFET work.
Specifically, isolation circuit include optocoupler or magnetic every or hold every, the part interfered from circuit interference source and easily every It leaves and, to achieve the purpose that the interference of isolation scene
Embodiment two
Embodiment two and the difference of embodiment one be, controllable accurate source of stable pressure ZD3, the resistance that the first voltage regulation unit is R3,R4.In conjunction with attached drawing 4, the first voltage regulation unit includes controllable accurate source of stable pressure ZD3, resistance R3, R4, second voltage regulation unit Including voltage-stabiliser tube ZD2, the base stage of the cathode connected to the transistor Q1 of the controllable accurate source of stable pressure ZD3, anode connection connection is surely The cathode of pressure pipe ZD2 is separately connected one end of resistance R3, R4, the other end connecting triode Q1 of the resistance R3 with reference to pole Emitter, the resistance R4 the other end connection voltage-stabiliser tube ZD2 cathode, the positive connecting triode of the voltage-stabiliser tube ZD2 The base stage of Q2.
Resistance R3 is adjusted, the resistance value of R4 obtains required driving positive voltage value, while controllable accurate source of stable pressure ZD3 The more common voltage-stabiliser tube of precision it is higher, output driving positive voltage is more accurate.
Those skilled in the art of the present invention can do described specific embodiment various The similar mode of modify or supplement or adopt substitutes, but without departing from the spirit of the present application or surmounts appended right and want Seek range defined in book.

Claims (5)

1. a kind of driving device applied to SiC-MOSFET characterized by comprising controller, isolation circuit, driving electricity Source circuit and active clamp driving circuit, the controller, isolation circuit, active clamp driving circuit are sequentially connected, described Driving power circuit is separately connected isolation circuit and active clamp driving circuit, wherein driving power circuit include capacitor C1, C2, C3, C4, resistance R1, R2, triode Q1, Q2, the first voltage regulation unit, the second voltage regulation unit, one end connection of the capacitor C1 The collector of triode Q1, the other end connect capacitor C2, the collector of the other end connecting triode Q2 of the capacitor C2, in electricity The both ends for holding C1, C2 are also respectively connected with prime positive electricity source output terminal, prime negative electricity source output terminal, one end connection of the resistance R1 The collector of triode Q1, the base stage of other end connecting triode Q1, the current collection of one end connecting triode Q2 of the resistance R2 Pole, the base stage of other end connecting triode Q2, the base stage of the cathode connecting triode Q1 of first voltage regulation unit, anode is respectively Connect the cathode of the second voltage regulation unit, one end of capacitor C1, C3 and C4, the positive connecting triode of second voltage regulation unit The base stage of Q2, the emitter of one end connecting triode Q1 of the capacitor C3, the other end connect the anode of the first voltage regulation unit, institute The emitter of one end connecting triode Q1 of capacitor C4 is stated, the other end connects the anode of the first voltage regulation unit.
2. the driving device according to claim 1 applied to SiC-MOSFET, which is characterized in that first pressure stabilizing Unit includes voltage-stabiliser tube ZD1, and second voltage regulation unit includes voltage-stabiliser tube ZD2, the cathode connecting triode of the voltage-stabiliser tube ZD1 The base stage of Q1, the cathode of anode connection voltage-stabiliser tube ZD2, the base stage of the positive connecting triode Q2 of voltage-stabiliser tube ZD2.
3. the driving device according to claim 1 applied to SiC-MOSFET, which is characterized in that first pressure stabilizing Unit includes controllable accurate source of stable pressure ZD3, resistance R3, R4, and second voltage regulation unit includes voltage-stabiliser tube ZD2, the controllable essence The base stage of the cathode connected to the transistor Q1 of close source of stable pressure ZD3, the cathode of anode connection connection voltage-stabiliser tube ZD2, with reference to pole point Not Lian Jie resistance R3, R4 one end, the emitter of the other end connecting triode Q1 of the resistance R3, the resistance R4's is another The cathode of end connection voltage-stabiliser tube ZD2, the base stage of the positive connecting triode Q2 of the voltage-stabiliser tube ZD2.
4. the driving device according to claim 1 applied to SiC-MOSFET, which is characterized in that the active clamp Driving circuit includes capacitor C21, C22, resistance R21, R22, R23, R24, triode Q21, Q22, the resistance R22, capacitor C21, C22 are sequentially connected, the collector of the other end connecting triode Q21 of resistance R22, and the other end of capacitor C22 connects three poles The collector of pipe Q22 is also respectively connected with the output end of capacitor C3, C4 at the both ends of capacitor C21, C22, and the one of the resistance R21 End connection isolation circuit output end, the other end are separately connected the base stage of the base stage of triode Q21, triode Q22, the resistance One end of R23 is separately connected the emitter of the emitter of triode Q21, triode Q22, and the other end is separately connected SiC- One end of the grid of MOSFET, resistance R24, the other end of the resistance R24 are separately connected the source electrode of SiC-MOSFET, capacitor The intermediate node of C21 and C22.
5. the driving device according to claim 1 applied to SiC-MOSFET, which is characterized in that the isolation circuit Including optocoupler or magnetic every or hold every.
CN201821228025.7U 2018-08-01 2018-08-01 A kind of driving device applied to SiC-MOSFET Active CN208461686U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111030452A (en) * 2019-12-19 2020-04-17 中车永济电机有限公司 Driving device of high-power full SiC-MOSFET module
CN111404411A (en) * 2020-02-26 2020-07-10 北京交通大学 Three-level active driving circuit for inhibiting crosstalk
WO2021012223A1 (en) * 2019-07-24 2021-01-28 深圳欣锐科技股份有限公司 Bridge type silicon carbide field effect transistor driving circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021012223A1 (en) * 2019-07-24 2021-01-28 深圳欣锐科技股份有限公司 Bridge type silicon carbide field effect transistor driving circuit
CN111030452A (en) * 2019-12-19 2020-04-17 中车永济电机有限公司 Driving device of high-power full SiC-MOSFET module
CN111404411A (en) * 2020-02-26 2020-07-10 北京交通大学 Three-level active driving circuit for inhibiting crosstalk

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Address after: 311500 No. 288 Shizhu Road, Tonglu Economic Development Zone, Hangzhou City, Zhejiang Province

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