CN108807286A - sensor LGA package structure - Google Patents
sensor LGA package structure Download PDFInfo
- Publication number
- CN108807286A CN108807286A CN201810741594.XA CN201810741594A CN108807286A CN 108807286 A CN108807286 A CN 108807286A CN 201810741594 A CN201810741594 A CN 201810741594A CN 108807286 A CN108807286 A CN 108807286A
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- China
- Prior art keywords
- gasket
- sensor
- lga package
- package structure
- hole
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Pressure Sensors (AREA)
Abstract
The present invention provides a kind of sensor LGA package structures, the encapsulating structure includes shell and substrate, the encapsulating structure is used for packaging transducer chip, the sensor LGA package structure further includes gasket, gasket is used for being bonded transducer chip, and the upper and lower surface of gasket is through with through-hole, the bottom of gasket and the lower surface of substrate connection, due to being equipped with through-hole, remaining area of gasket is adhered to by glue on substrate.The encapsulating structure, by the above method, can optimize base plate stress in volume production, solve the electrical signal drifting problem exported due to transducer chip caused by stress.
Description
Technical field
The present invention relates to sensor encapsulation fields, more particularly, to a kind of sensor LGA package structure.
Background technology
Encapsulation technology is most important for chip.Currently, the encapsulation technology of semiconductor chip cover Filp Chip,
There are many forms by COB and LGA etc., wherein in view of LGA package technology in its rich interface degree, mechanical stability and heat dissipation
The good behaviour of aspect is received more and more attention and is applied.LGA full name are called Land Grid Array, or are known as flat
Surface grids array package belongs to the surface mounting technique of integrated circuit (IC), and the chip using this packing forms is often quilt
It connects or is welded direct on printed circuit board (PCB substrate).
It is past specific to the LGA construction packages, such as silicon microphone, pressure gauge, infrared sensor, thermometer etc. of sensor
Toward using metal shell to be welded in PCB substrate, the transducer chip to seal the inside (is responsible for sound, optics, power
The extraneous non-electrical physical quantity such as, kinematics and magnetic is changed into electricity physical quantity) and dedicated IC chip (asic chip)
Scheme.In order to improve the characteristic of product sensor, such as patent CN201383873Y keeps silicon electric by the way that the scheme of gasket is arranged
Hold microphone in its sound-electric conversion medium sensitivity higher, frequency response curve is more preferable, and the material of industry generally use gasket has more at present
Kind, including glass, ceramics, copper (nickel plating is gold-plated), PCB substrate and stainless steel etc., in addition in connection, if using copper
(nickel plating is gold-plated) or PCB substrate, the often mode of preferred welding, such as patent CN205122573U, although welding manner is given birth to
Produce efficient, but if doing pad in PCB substrate or plating the metals such as welding gold/nickel on copper, cost is relatively high,
And the temperature of tin metal in the welding process is up to 250~300 DEG C, can undergo liquefaction and cured process so that the shape of tin
Shape/shrinking percentage generates large change, larger internal stress may be will produce, to influence the final performance of product.So industry is existing
The technical solution being attached in the way of gluing knot is being had developed, in patent CN108012447A, is describing and utilizes glue
The main process such as water spot glue, attachment, solidification complete the packaging technology of semiconductor.
But, transducer chip also suffers from the influence of encapsulation stress when being encapsulated using gluing, and this influence derives from
The interior change and external change of encapsulating material itself.Wherein, interior change is mainly caused due to glue stress release, this
It, can be by selecting thixotropy and the suitable glue model of condition of cure to evade falling internal stress therein in the case of kind；In addition
It is external change, this variation using glue on the one hand because bond transducer chip, when carrying out pressing fixed downwards, glue
Can be overflowed from transducer chip edge, the part of spilling after hardening equivalent to increase transducer chip and gasket, gasket with
The contact area of PCB substrate, and be FR4 resins or BT resins, this kind of material since the material of PCB substrate used at present is common
After processing is completed, under the influence of by conditions such as extraneous mechanics, time, temperature, humidity, it may occur that irreversible plasticity
Deformation, this deformation often drive the deformation for the component pasted above it, regardless of this component is transducer chip sheet
Body still connects transducer chip by gasket, and the deformation in PCB substrate can all cause transducer chip to turn to electrical signal
Output during changing changes, and this phenomenon is also referred to as the drift of electrical signal.
Invention content
Present invention particularly provides a kind of LGA package structures of transducer chip, to be answered in volume production by optimizing substrate
The electrical signal drifting problem that transducer chip caused by the influence of power exports.Specific technical solution is as follows：
A kind of sensor LGA package structure, including shell and substrate, substrate and shell form encapsulating structure, encapsulating structure
For packaging transducer chip, which further includes gasket, and the upper surface of gasket is adhered to transducing with glue
The upper and lower surface of the lower surface of device chip, gasket is through with through-hole, and the gasket underrun glue for removing through-hole position is adhered to
On substrate.
As a preferred option, the maximal side size of the gasket is not more than the maximal side of the transducer chip
3 times.
As a preferred option, the upper and lower surface of gasket penetrates through at least one through-hole, offers convenience for glue application.
As a preferred option, through-hole penetrates through the area of the gasket bottom surface and accounts for the 30~70% of the gasket area.
As preferred embodiment, through-hole is stepped hole.
As a preferred option, the step surface of stepped hole spacer thickness below is more than the spacer thickness of step surface or more
2 times.
As a preferred option, the bottom edge position of gasket is provided with groove structure.
As a preferred option, the material selection stainless steel of gasket.
As a preferred option, the material of gasket passes through at least one of high temperature quenching, tempering, annealing
Heat treatment process processing.
As a preferred option, encapsulating structure is also used for encapsulating IC chip.
Beneficial effects of the present invention：
1. by limiting the area of gasket or opening stepped hole in gasket centre position, the contact surface of gasket and substrate is reduced
Product, effectively reduces influence of the base plate stress to transducer chip, and sensor output electrical signals data wander is reduced to reach
Technique effect；
2. by the marginal position recessing structure in gasket, can obstruct between transducer chip and gasket and gasket
Glue is directly connected between substrate, to weakening influence of the base plate stress to transducer chip；
3. the stainless steel gasket used fully discharges gasket material after the heat treatment process such as high annealing and tempering
The stress of material itself, influence of effective isolating substrate stress variation to transducer chip.
Description of the drawings
Fig. 1 is the structural schematic diagram of sensor LGA package structure in the present invention.
Specific implementation mode
Below using embodiment and attached drawing come the embodiment that the present invention will be described in detail, how skill is applied to the present invention whereby
Art means solve technical problem, and the realization process for reaching technique effect can fully understand and implement.
The embodiment of the invention discloses a kind of sensor LGA package structures, to pass through optimization base plate stress in volume production
Influence caused by transducer chip export electrical signal drifting problem.
As shown in Figure 1, the sensor LGA package structure of the present embodiment, including shell 10 and substrate 20, substrate 20 and shell
10 composition encapsulating structures, encapsulating structure are used for packaging transducer chip 40, which further includes gasket 60,
Gasket 60 is used for being bonded transducer chip 40, and bonding uses adhesive means, the upper and lower surface of gasket 60 to set there are one through-hole 30, should
Through-hole has penetrated through entire gasket, removes 60 underrun glue of the gasket adherency at 30 position of through-hole on the base plate 20.
As a preferred embodiment, the full-size of gasket 60 is not more than the maximal side of transducer chip 40
3 times.That is, the size of gasket 60 with small as possible for principle, long wide direction full-size be not more than transducer chip 40
3 times of maximal side are optimal.
As a preferred embodiment, through-hole 30 accounts for the 30 of 60 total sectional area of gasket through 60 base area of gasket
~70%.The purpose that gasket 60 opens hole 30 is exactly the area for reducing the bottom surface of gasket 60 and not being in direct contact with lower substrate.One
As for, the area of through-hole 30 is bigger, gasket 60 remove through-hole 30 position area it is smaller, to realize to reduce contact surface
Long-pending mode come reduce electrical signal drift technique effect.However on the other hand, through-hole 30, which crosses conference, leads to 60 side wall of gasket
Fragile even degenerate of structure is thin-wall construction, is easily failed when substrate 20 deforms or is acted on by extraneous stress, to shadow
Ring the reliability of product.Therefore from the aspect of synthesis two, preferably selection is that through-hole 30 is made to account for pad through 60 base area of gasket
The 30~70% of 60 total sectional area of piece.
As a preferred embodiment, through-hole 30 is stepped hole.Setting gasket upper table can further be separately optimized
The quantity and area in face and bottom surface through-hole so that the contact shape area and gasket 60 and top transducing of gasket 60 and substrate 20
The contact shape area of device chip 40 can completely cut off angle from stress and optimize more reasonable.In view of 20 upper table of substrate
Face and the lower surface of transducer chip 40 are not necessarily smooth, and trepanning number of the through-hole 30 on about 60 two surfaces of gasket need not phase
Together, shape, but can be respectively according to the contact on about 60 two surfaces of gasket also not necessarily with corresponding congruence or similarity relation
Demand is arranged.
As a preferred embodiment, the step surface of stepped hole spacer thickness below is more than the pad of step surface or more
2 times of piece thickness.In the present solution, gasket 60 is divided into two parts of different-thickness, i.e. step surface part below by stepped hole
With part more than step surface, the step surface spacer thickness below of stepped hole is more than 2 times of the spacer thickness of step surface or more,
In this way, can be on the one hand the spilling slot milling for accommodating lower section bonding glue, lower substrate on the other hand can be reduced to the greatest extent
Stress influence.
As a preferred embodiment, the bottom edge position of gasket 60 is provided with groove structure, and utilize groove knot
Structure, in gasket quadrangle at eaves wall.In the present solution, this structure is identical as the gasket setting purpose of stepped hole.Since glue exists
It can be upwardly extended along the side wall of gasket or transducer chip 40 under the action of capillary mechanics in solidification process, if with collection
It is mixed at the glue of 50 lower section of circuit chip, the bond area of transducer chip 40 and gasket 60 can be increased, to generate
Asymmetric stress.And the eaves wall for the stretching that can be formed by 60 bottom of gasket in figure, effectively glue can be prevented to pass through hair
Thin power upwardly extends the generation of phenomenon, effectively reduces the contact area between glue and gasket 60, while can also obstruct top and change
The glue that energy device chip 40 is bonded to gasket 60 is connected with the glue of inferior shim 60 to substrate bonding, to play under decrease
The effect that square base plate stress influences.
As a preferred embodiment, the material of gasket 60 includes but not limited to stainless steel.
As a preferred embodiment, the material of gasket 60 passes through at least one of high temperature quenching, tempering, annealing
Heat treatment process processing.By techniques such as high temperature quenching, annealing, tempering, fully heat treatment ensures gasket strength and discharges gasket
For completely cutting off base plate stress in being arranged again after the material stress of itself to sensor LGA package.
As a preferred embodiment, encapsulating structure is also used for encapsulating IC chip 50.In addition, shell 10
Top can open up the accessory structure in hole 11 and hole 11.
In conclusion the electrical signal output of transducer chip, often not only with it by the sound, light, power for really needing sensitivity
Signal is related, also related with the encapsulation stress that it is subject in a package.It is acted in extraneous factors such as environment temperature, humidity, times
Under, the stress of the substrate of the bonding below transducer chip changes, and drifts about so as to cause energy converter electrical signal
Phenomenon is the FAQs in the class wrapper.The scheme of the present embodiment is bonded in by designing a kind of gasket on substrate, gasket with
The contact area of substrate is small as far as possible, convenient in volume production so as to reduce influence of the base plate stress to transducer chip
Optimizing base plate stress influences caused energy converter output shift problem.In addition, the term "top" in specification and claims,
"bottom", "upper", "lower", " left side ", the (if present)s such as " right side " are for explanatory purposes and permanent opposite not necessarily for describing
Position.It can be understood that the term so used can exchange in the appropriate case so that the implementation of invention as described herein
Example can be operated on other directions for example different from above-mentioned or described herein direction.Such as due in the present invention
The upper and lower surface for describing gasket 60 is simultaneously Nian Jie with substrate 20 and transducer chip 40 respectively, if necessary its position relationship be can be with
It is exchanged with each other.
The above described is only a preferred embodiment of the present invention, being not that the invention has other forms of limitations, appoint
What those skilled in the art changed or be modified as possibly also with the technology contents of the disclosure above equivalent variations etc.
Imitate embodiment.But it is every without departing from technical solution of the present invention content, according to the technical essence of the invention to above example institute
Make it is any it is simple modification, equivalent variations or with remodeling, still fall within the protection domain of technical solution of the present invention.
Claims (10)
1. a kind of sensor LGA package structure, including shell and substrate, the encapsulating structure is used for packaging transducer chip,
It is characterized in that, which further includes gasket, and the gasket is used for being bonded the transducer chip, the pad
Piece is provided at least one through-hole, and the gasket bottom surface removes the position adherency of the through-hole on the substrate.
2. sensor LGA package structure as described in claim 1, which is characterized in that the maximal side size of the gasket is not
More than 3 times of the maximal side of the transducer chip.
3. sensor LGA package structure as described in claim 1, which is characterized in that the adherent fashion of the gasket is to use glue
Water is bonded.
4. sensor LGA package structure as described in claim 1, which is characterized in that the through-hole penetrates through the gasket bottom surface
Area account for the 30~70% of the gasket area.
5. sensor LGA package structure as described in claim 1, which is characterized in that the through-hole is stepped hole.
6. sensor LGA package structure as claimed in claim 4, which is characterized in that the step surface of the stepped hole is below
Spacer thickness is more than 2 times of the spacer thickness of step surface or more.
7. sensor LGA package structure as described in claim 1, which is characterized in that open the bottom edge position of the gasket
Fluted structure.
8. sensor LGA package structure as described in claim 1, which is characterized in that the material of the gasket is stainless steel.
9. sensor LGA package structure as described in claim 1, which is characterized in that the material of the gasket is quenched by high temperature
The heat treatment process processing of at least one of fire, tempering, annealing.
10. sensor LGA package structure as described in claim 1, which is characterized in that the encapsulating structure is also used for encapsulating collection
At circuit chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810741594.XA CN108807286A (en) | 2018-07-06 | 2018-07-06 | sensor LGA package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810741594.XA CN108807286A (en) | 2018-07-06 | 2018-07-06 | sensor LGA package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108807286A true CN108807286A (en) | 2018-11-13 |
Family
ID=64075403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810741594.XA Pending CN108807286A (en) | 2018-07-06 | 2018-07-06 | sensor LGA package structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109769184A (en) * | 2019-01-16 | 2019-05-17 | 钰太芯微电子科技（上海）有限公司 | A kind of encapsulating structure of microphone |
| CN110958549A (en) * | 2019-12-31 | 2020-04-03 | 歌尔股份有限公司 | A dustproof construction and MEMS microphone packaging structure for MEMS device |
| CN112857276A (en) * | 2021-03-21 | 2021-05-28 | 中北大学 | Surface acoustic wave strain sensor and preparation method thereof |
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| WO2007126179A1 (en) * | 2006-05-03 | 2007-11-08 | Bse Co., Ltd. | Silicon condenser microphone having additional back chamber |
| CN201383873Y (en) * | 2009-01-19 | 2010-01-13 | 歌尔声学股份有限公司 | Silicon condenser microphone with enlarged back cavity |
| CN102045632A (en) * | 2009-10-19 | 2011-05-04 | 宝星电子股份有限公司 | Silicon condenser microphone having an additional back chamber and a fabrication method therefor |
| CN105516871A (en) * | 2014-09-24 | 2016-04-20 | 北京卓锐微技术有限公司 | Silicon-condenser microphone being able to enlarge back volume |
| CN105764017A (en) * | 2014-12-16 | 2016-07-13 | 北京卓锐微技术有限公司 | Silicon capacitance microphone |
| CN108012447A (en) * | 2017-11-29 | 2018-05-08 | 强半导体（苏州）有限公司 | Semiconductor packages multilayer organic substrate attachment process |
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2018
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007126179A1 (en) * | 2006-05-03 | 2007-11-08 | Bse Co., Ltd. | Silicon condenser microphone having additional back chamber |
| CN201383873Y (en) * | 2009-01-19 | 2010-01-13 | 歌尔声学股份有限公司 | Silicon condenser microphone with enlarged back cavity |
| CN102045632A (en) * | 2009-10-19 | 2011-05-04 | 宝星电子股份有限公司 | Silicon condenser microphone having an additional back chamber and a fabrication method therefor |
| CN105516871A (en) * | 2014-09-24 | 2016-04-20 | 北京卓锐微技术有限公司 | Silicon-condenser microphone being able to enlarge back volume |
| CN105764017A (en) * | 2014-12-16 | 2016-07-13 | 北京卓锐微技术有限公司 | Silicon capacitance microphone |
| CN108012447A (en) * | 2017-11-29 | 2018-05-08 | 强半导体（苏州）有限公司 | Semiconductor packages multilayer organic substrate attachment process |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109769184A (en) * | 2019-01-16 | 2019-05-17 | 钰太芯微电子科技（上海）有限公司 | A kind of encapsulating structure of microphone |
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| CN110958549A (en) * | 2019-12-31 | 2020-04-03 | 歌尔股份有限公司 | A dustproof construction and MEMS microphone packaging structure for MEMS device |
| WO2021135110A1 (en) * | 2019-12-31 | 2021-07-08 | 潍坊歌尔微电子有限公司 | Dustproof structure and mems microphone packaging structure used for mems device |
| CN112857276A (en) * | 2021-03-21 | 2021-05-28 | 中北大学 | Surface acoustic wave strain sensor and preparation method thereof |
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Effective date of registration: 20201113 Address after: 214000 5th floor, building C, swan tower, Wuxi Software Park, No.111, Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province Applicant after: Wuxi Weil Semiconductor Co.,Ltd. Address before: 430074 Three Floors of Henglong Building D Building in Huazhong Dawn Software Park, No. 1 Guanshan Road, Donghu New Technology Development Zone, Wuhan City, Hubei Province Applicant before: WUHAN NAIPUDENG TECHNOLOGY Co.,Ltd. |
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Application publication date: 20181113 |