CN201383873Y - Silicon condenser microphone with enlarged back cavity - Google Patents
Silicon condenser microphone with enlarged back cavity Download PDFInfo
- Publication number
- CN201383873Y CN201383873Y CN200920018529.0U CN200920018529U CN201383873Y CN 201383873 Y CN201383873 Y CN 201383873Y CN 200920018529 U CN200920018529 U CN 200920018529U CN 201383873 Y CN201383873 Y CN 201383873Y
- Authority
- CN
- China
- Prior art keywords
- lid
- back cavity
- capacitor microphone
- wiring board
- silicon capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Landscapes
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
Abstract
The utility model discloses a silicon condenser microphone with an enlarged back cavity, which comprises a protection structure of the silicon condenser microphone. The protection structure is formed by a housing and a circuit board; an MEMS acoustical-electrical transition chip is mounted in the protection structure; a sound aperture communicated with the outer space of the MEMS acoustical-electrical transition chip is formed on the protection structure; a cover in sealing combination with the surface of the circuit board is mounted on the surface of the circuit board inside the protection structure; the cover comprises a boss part provided with a hollow cavity and a planar part with a breather hole formed thereon, and the MEMS acoustical-electrical transition chip is mounted on the planar part; a ventilation channel is formed at the joint part of the bottom surface of the cover and the surface of the circuit board; and an integrated-circuit chip is mounted on the boss part. By adopting the silicon condenser microphone, the air space (back cavity) at the rear part of the MEMS acoustical-electrical transition chip is effectively enlarged without excessively increasing the height of the product and enlarging the flat area of the product due to the addition of the cover.
Description
Technical field
The utility model relates to a kind of microphone, especially relates to a kind of silicon capacitor microphone with novel package structure.
Background technology
In recent years, along with electronic product volumes such as mobile phone, notebook constantly reduce, performance is more and more higher, also require the volume of supporting electronic component constantly to reduce, performance and consistency improve.Under this background, also released a lot of novel products as the microphone products of one of strength member, the silicon capacitor microphone that utilizes MEMS (MEMS (micro electro mechanical system)) technology to produce is a representative products wherein.And the key technology in the silicon capacitor microphone is a package design, and it is higher to encapsulate shared cost ratio.So, a lot of patents about the silicon capacitor microphone encapsulation technology have also appearred recently.
Publication number be US20020102004 U.S. Patent Publication the microphone package patent of a kind of by name " small-sized silicon capacitor microphone and manufacture method thereof (miniature silicon condenser microphone and method forproducing same) ", silicon capacitor microphone in this patent comprises a shell, shell is provided with the sound hole that can see through sound, a wiring board is arranged, shell and wiring board are combined into a cavity, MEMS (MEMS (micro electro mechanical system)) acoustic-electro conversion chip and integrated circuit are installed on the wiring board, and MEMS acoustic-electro conversion chip and integrated circuit can be converted into the signal of telecommunication with voice signal jointly.The key technology point (shown in Fig. 6 in this patent documentation) of patent US20020102004 is: make certain depression by technologies such as corrosion on the wiring board of the position below the MEMS acoustic-electro conversion chip.The advantage of this design is: (the sound hole is arranged on the position beyond the MEMS acoustic-electro conversion chip to affact the product structure of MEMS acoustic-electro conversion chip top at voice signal, the voice signal of extraneous transmission acts on MEMS acoustic-electro conversion chip top), the air space that can increase MEMS acoustic-electro conversion chip below (is referred to as " back cavity-Back volume " usually in the industry, refer to that sound wave runs into after the MEMS acoustic-electro conversion chip, the space at MEMS acoustic-electro conversion chip rear), can make the sensitivity of silicon capacitor microphone higher, frequency response curve is better.Yet the wiring board that passes through MEMS acoustic-electro conversion chip below of this simplicity of design caves in and increases back cavity, and is very limited to the contribution that back cavity increases, also very little to the contribution that performance improves; And this design will make the thickness of wiring board increase greatly, too much increase the height of product, and cause cost to increase.
Publication number is to disclose a kind of silicon capacitor microphone equally during the PCT of W02007126179A1 applies for a patent, this patent has disclosed a kind of silicon capacitor microphone that can increase back cavity equally, a lid that has the middle part projection is installed in the circuit board, the MEMS acoustic-electro conversion chip is installed on the middle part lug boss of lid, on the lug boss of middle part and the position of MEMS acoustic-electro conversion chip correspondence is provided with air-vent, thereby the space that forms between the middle part lug boss of wiring board and lid can be used as back cavity.This design can still will make the integral thickness of product increase greatly so that the space of back cavity becomes big.
The utility model content
Technical problem to be solved in the utility model provides a kind of height and planar dimension that increases product of exceeding, and but can significantly increase the silicon capacitor microphone of the increase back cavity of cavity space behind the MEMS acoustic-electro conversion chip.
For solving the problems of the technologies described above; the technical solution of the utility model is: the silicon capacitor microphone that increases back cavity; comprise shell and wiring board; described shell and described wiring board constitute the protection structure of silicon capacitor microphone; described protection inside configuration is equipped with the MEMS acoustic-electro conversion chip; described protection structure is provided with the sound hole that is communicated with described MEMS acoustic-electro conversion chip space outerpace; and: the lid that comprises a par and a lug boss is installed on the PCB surface of described protection inside configuration; the periphery of described lid and the airtight combination of described PCB surface; described lug boss inner space forms a cavity; described par is provided with at least one air-vent; on the described par of described air-vent top described MEMS acoustic-electro conversion chip is installed; the joint portion of described lid bottom surface and described PCB surface is provided with the gas-permeable channels that is communicated with described air-vent and described cavity, on the described lug boss integrated circuit (IC) chip is installed.By this design, can effectively increase the air space (back cavity) at MEMS acoustic-electro conversion chip rear, and the MEMS acoustic-electro conversion chip is installed on the par of lid, do not increase the height of product too much; Because the integrated circuit (IC) chip height of using in the general silicon capacitor microphone is lower than MEMS acoustic-electro conversion chip height, so integrated circuit (IC) chip is installed on the lug boss of lid, too much do not increase the product height on the whole, do not become big because of the interpolation of lid and the area of plane of product also has.
The improvement of the technical program is: electric capacity is installed or/and resistance on the wiring board of the cavity inside that described lug boss forms.All designed electric capacity or/and the resistance part in the circuit on the general silicon capacitor microphone wiring board, form filter circuit or antistatic circuit etc., opposing electromagnetic interference, effect such as antistatic are arranged, with electric capacity or/and resistance be installed on the wiring board of the cavity inside that lug boss forms, contrast original design, be equivalent to not take the area of plane, further reduced the planar dimension of product than original design.
The improvement of the technical program is: described lid is electrically connected the earthed circuit on the described wiring board.With lid ground connection, the interference free performance that helps the wiring board internal circuit strengthens.
The improvement of the technical program is: the groove of described gas-permeable channels for being provided with on described wiring board.The spatial communication air-vent of MEMS acoustic-electro conversion chip below, air-vent is communicated to the cavity of lug boss and PCB surface formation by the groove that is provided with on the wiring board, this wiring board does not need to be provided with the too much number of plies, generally can use wiring board and another layer of one deck hollow out not to have the wiring board of hollow out to be combined together to form, perhaps can be by metal level being set in PCB surface, groove of design designs comparatively simple on metal level.
The improvement of the technical program is: the groove of described gas-permeable channels for being provided with on described lid par.The spatial communication air-vent of MEMS acoustic-electro conversion chip below, air-vent is communicated to the cavity that lug boss and PCB surface form by the groove that is provided with on the lid par, and this wiring board can be the plane, designs comparatively simple.
The improvement of the technical program is: be provided with the ring seal layer between described lid and the described PCB surface, made by described ring seal layer to form the slit between described lid and the described PCB surface, thereby form described gas-permeable channels.Applied lid of this design and wiring board do not need to be provided with groove, only need ring seal layer formation certain height and seal well just can be effective.
The improvement of the technical program is: the par of described lid and lug boss are one, and the edge of described lug boss is provided with horizontal-extending portion, and described horizontal-extending portion and described PCB surface combine.This lid can be avoided too much installation procedure as integrative-structure; And the edge of lug boss is provided with horizontal-extending portion, makes between lid edge and the wiring board contact area bigger, and sealing property is better.
Improvement of the technical scheme is: be provided with the support salient point between the centre of described par and the described PCB surface.
The improvement of the technical program is: described air-vent is a plurality of micro-holes.This air-vent that is made of a plurality of micro-holes can be avoided impurity such as dust, the particle contact MEMS acoustic-electro conversion chip in the back cavity effectively, causes various bad.
The improvement of the technical program is: described lid is a metal lid.Lid can be by multiple material, but the ductility of metal material (for example aluminium) is better, and the part of making complicated shape under less size is more or less freely, with low cost, other for example plastic material or ceramic material also can use,
For the air seal that guarantees lid periphery and PCB surface is good, lid and PCB surface can adopt viscose to combine, and also can adopt other materials such as scolding tin to combine; Shell can be that integrally formed or a plurality of parts are combined in integrally formed for metal or resin material making; The sound hole can be arranged on shell or the wiring board, as long as can being communicated with described MEMS acoustic-electro conversion chip space outerpace, the sound hole just can play the effect that increases back cavity, but the position with the lid correspondence can not be set in the circuit board, otherwise product will not have the effect that increases back cavity, accept the external sound signal from the below of MEMS acoustic-electro conversion chip and become; Board substrate can be resin or other materials.
Generally speaking, the wiring board outer surface of silicon capacitor microphone is provided with and is used for a plurality of pads that circuit connects, design has circuit communication between MEMS acoustic-electro conversion chip, conversion of signals chip and the pad, the design of the design of this type of technology and MEMS acoustic-electro conversion chip itself does not influence purport of the present utility model, and belonged to known technology, do not done detailed description; The silicon capacitor microphone shell can adopt metal or wiring board material, and the adjustment of this type of design does not influence purport of the present utility model yet.
Owing to adopted technique scheme, the beneficial effects of the utility model are: the air space (back cavity) that can increase MEMS acoustic-electro conversion chip rear effectively, and the MEMS acoustic-electro conversion chip is installed on the par of lid, does not increase the height of product too much; And because the integrated circuit (IC) chip height of using in the general silicon capacitor microphone is lower than MEMS acoustic-electro conversion chip height, so integrated circuit (IC) chip is installed on the lug boss of lid, too much do not increase the product height on the whole, do not become big because of the interpolation of lid and the area of plane of product also has.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment one;
Fig. 2 is the perspective exploded view of the utility model embodiment one;
Fig. 3 is the structural representation of the utility model embodiment two;
Fig. 4 is the structural representation of the utility model embodiment three;
Fig. 5 is the schematic top plan view of the utility model embodiment three lids.
Embodiment
Embodiment one: as shown in Figure 1 and Figure 2, increase the silicon capacitor microphone of back cavity, comprise the metal shell 1 of a square groove shape, shell 1 is provided with the sound hole 11 that is used to receive voice signal; The square wiring board 2 that resin material is made as base material; Shell 1 and wiring board 2 bond together, and become a protection structure; Wiring board 2 surfaces of protection inside configuration are gone up to paste an one metal lid 3 that comprises a par 32 and a lug boss 31 are installed, the periphery of lid 3 and wiring board 2 surperficial airtight combinations, lug boss 31 and wiring board 2 surfaces form a cavity 34, par 32 is concordant with wiring board 2 surfaces, par 32 is provided with an air-vent 33, air-vent 33 tops are equipped with a MEMS acoustic-electro conversion chip 4, the position, joint portion of wiring board 2 surfaces and par 32 is provided with a horizontal gas-permeable channels 21 that can be communicated with air-vent 33 and cavity 34, in the implementation case, horizontal gas-permeable channels 21 realizes by the elongated recess that a level is set on the base material on wiring board 2 surfaces, equally also can be by metal level being set on wiring board 2 surfaces, groove of design is realized on metal level; On the lug boss 31 of lid 3 integrated circuit (IC) chip 5 is installed, integrated circuit (IC) chip 5, MEMS acoustic-electro conversion chip 4 are realized the necessary circuit connection by metal wire 6 and circuit are connected on the wiring board 2.The silicon capacitor microphone of this structure, MEMS acoustic-electro conversion chip 4 utilizes that viscose is airtight to be bonded on the par 32, space 41 under the MEMS acoustic-electro conversion chip 4 and air-vent 33 are communicated with, air-vent 33 and horizontal gas-permeable channels 21 are communicated with, horizontal gas-permeable channels 21 and cavity 34 are communicated with, and the space of this connection is airtight.Thereby, space 41 under the MEMS acoustic-electro conversion chip 4, air-vent 33, horizontal gas-permeable channels 21 and cavity 34 all become the back cavity (Back volume) of MEMS acoustic-electro conversion chip 4, wherein the space 41 under the MEMS acoustic-electro conversion chip 4 is for forming naturally, air-vent 33 and horizontal gas-permeable channels 21 mainly play the effect of air communication, and cavity 34 is the key factor that back cavity (Back volume) increases.By this design, can effectively increase the air space (back cavity) at MEMS acoustic-electro conversion chip rear, and the MEMS acoustic-electro conversion chip is installed on the par of lid, integrated circuit (IC) chip is installed in the lug boss 31 of lid, do not increase the height of product too much, can solve the defective that exists in the existing patent of background technology effectively.
In the implementation case, horizontal gas-permeable channels is to realize by depression is set on PCB surface, equally also can realize by depression is set on the surface of lid and wiring board combination.
Embodiment two: the implementation case has been made certain changes and improvements on the basis of case study on implementation one.
As shown in Figure 3, on wiring board 2 surfaces in the cavity 34 that metal lid 3 lug bosses 31 form filter capacitor 7 is installed, and the earthed circuit (not shown) on the metal lid 3 connection line plates 2.All designed electric capacity or/and the resistance part in the circuit on the general silicon capacitor microphone wiring board, form filter circuit or antistatic circuit etc., opposing electromagnetic interference, effect such as antistatic are arranged, with electric capacity or/and resistance be installed on the wiring board of the cavity inside that lug boss forms, contrast original design, be equivalent to not take the area of plane, further reduced the planar dimension of product than original design.And with lid ground connection, the interference free performance that helps the wiring board internal circuit strengthens.
Embodiment three: as Fig. 4, shown in Figure 5, the main distinction of the implementation case and case study on implementation one is, the edge of lid 3 lug bosses 31 is provided with the extension 35 of level, horizontal-extending portion 35 and par 32 are by airtight the combining of confining bed 8 and wiring board 2 surfaces of an annular, the two bond area increases, and, the height of confining bed 8 suitably increases, make the enough ventilation spaces of reservation between wiring board 2 and the lid 3, this design can no longer be provided with the horizontal gas-permeable channels on wiring board 2 surfaces, confining bed 8 can use cohesiveness and seal glue class material preferably, also can use soldering tin material to make; Air-vent 33 is made of a plurality of tiny air-vents, and this structure can prevent that the impurity in the back cavity is attached on the MEMS acoustic-electro conversion chip 4, causes various bad phenomenon; In order to guarantee metal lid 3 integrated circuit (IC) chip 5 and the 4 back generation vibrations of MEMS acoustic-electro conversion chip are being installed, can between the centre of metal lid 3 and wiring board 2, be provided with and support salient point 36, salient point 36 can be one or more, can be arranged on the metal lid 3 or salient point on the wiring board 2 or independently, can play supporting role preferably.
Claims (10)
1. increase the silicon capacitor microphone of back cavity; comprise shell and wiring board; described shell and described wiring board constitute the protection structure of silicon capacitor microphone; described protection inside configuration is equipped with the MEMS acoustic-electro conversion chip; described protection structure is provided with the sound hole that is communicated with described MEMS acoustic-electro conversion chip space outerpace; it is characterized in that: the lid that comprises a par and a lug boss is installed on the PCB surface of described protection inside configuration; the periphery of described lid and the airtight combination of described PCB surface; described lug boss inner space forms a cavity; described par is provided with at least one air-vent; on the described par of described air-vent top described MEMS acoustic-electro conversion chip is installed; the joint portion of described lid bottom surface and described PCB surface is provided with the gas-permeable channels that is communicated with described air-vent and described cavity, on the described lug boss integrated circuit (IC) chip is installed.
2. the silicon capacitor microphone of increase back cavity according to claim 1 is characterized in that: electric capacity is installed or/and resistance on the wiring board of the cavity inside that described lug boss forms.
3. the silicon capacitor microphone of increase back cavity according to claim 1 is characterized in that: described lid is electrically connected the earthed circuit on the described wiring board.
4. the silicon capacitor microphone of increase back cavity according to claim 1 is characterized in that: the groove of described gas-permeable channels for being provided with on described wiring board.
5. the silicon capacitor microphone of increase back cavity according to claim 1 is characterized in that: the groove of described gas-permeable channels for being provided with on described lid par.
6. the silicon capacitor microphone of increase back cavity according to claim 1, it is characterized in that: be provided with the ring seal layer between described lid and the described PCB surface, make by described ring seal layer to form the slit between described lid and the described PCB surface, thereby form described gas-permeable channels.
7. the silicon capacitor microphone of increase back cavity according to claim 6 is characterized in that: be provided with the support salient point between the centre of described par and the described PCB surface.
8. according to the silicon capacitor microphone of the described increase back cavity of the arbitrary claim of claim 1 to 7, it is characterized in that: the par of described lid and lug boss are one, the edge of described lug boss is provided with horizontal-extending portion, and described horizontal-extending portion and described PCB surface combine.
9. the silicon capacitor microphone of increase back cavity according to claim 8 is characterized in that: described air-vent is a plurality of micro-holes.
10. the silicon capacitor microphone of increase back cavity according to claim 8 is characterized in that: described lid is a metal lid.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920018529.0U CN201383873Y (en) | 2009-01-19 | 2009-01-19 | Silicon condenser microphone with enlarged back cavity |
| PCT/CN2009/073551 WO2010048833A1 (en) | 2008-10-28 | 2009-08-27 | Silicon capacitor microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920018529.0U CN201383873Y (en) | 2009-01-19 | 2009-01-19 | Silicon condenser microphone with enlarged back cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201383873Y true CN201383873Y (en) | 2010-01-13 |
Family
ID=41527344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200920018529.0U Expired - Lifetime CN201383873Y (en) | 2008-10-28 | 2009-01-19 | Silicon condenser microphone with enlarged back cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201383873Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105323688A (en) * | 2014-08-04 | 2016-02-10 | 北京卓锐微技术有限公司 | Silicon capacitance microphone with enlarged back cavity |
| CN105516871A (en) * | 2014-09-24 | 2016-04-20 | 北京卓锐微技术有限公司 | Silicon-condenser microphone being able to enlarge back volume |
| CN108807286A (en) * | 2018-07-06 | 2018-11-13 | 武汉耐普登科技有限公司 | sensor LGA package structure |
| CN108966103A (en) * | 2018-08-29 | 2018-12-07 | 汤小贾 | MEMS microphone package method, structure and electronic product |
| CN109451383A (en) * | 2018-12-29 | 2019-03-08 | 华景科技无锡有限公司 | A kind of microphone |
| CN113840218A (en) * | 2021-06-21 | 2021-12-24 | 荣成歌尔微电子有限公司 | Microphone packaging structure and electronic equipment |
-
2009
- 2009-01-19 CN CN200920018529.0U patent/CN201383873Y/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105323688A (en) * | 2014-08-04 | 2016-02-10 | 北京卓锐微技术有限公司 | Silicon capacitance microphone with enlarged back cavity |
| CN105516871A (en) * | 2014-09-24 | 2016-04-20 | 北京卓锐微技术有限公司 | Silicon-condenser microphone being able to enlarge back volume |
| CN108807286A (en) * | 2018-07-06 | 2018-11-13 | 武汉耐普登科技有限公司 | sensor LGA package structure |
| CN108966103A (en) * | 2018-08-29 | 2018-12-07 | 汤小贾 | MEMS microphone package method, structure and electronic product |
| CN109451383A (en) * | 2018-12-29 | 2019-03-08 | 华景科技无锡有限公司 | A kind of microphone |
| CN113840218A (en) * | 2021-06-21 | 2021-12-24 | 荣成歌尔微电子有限公司 | Microphone packaging structure and electronic equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101394687A (en) | Microphone with silicon capacitor | |
| CN201383873Y (en) | Silicon condenser microphone with enlarged back cavity | |
| US11178494B2 (en) | Sound generating device | |
| CN201114761Y (en) | Dustproof silicon microphone | |
| CN206100450U (en) | Packaging structure of MEMS microphone | |
| CN208924506U (en) | The encapsulating structure and MEMS microphone of sensor | |
| CN101426166A (en) | Silicon microphone | |
| CN201138866Y (en) | Silicon microphone with improved structure | |
| CN201153325Y (en) | Silicon capacitor microphone | |
| CN201226592Y (en) | Silicon microphone packaged by flexible circuit board | |
| CN102158775A (en) | MEMS (Micro Electro Mechanical System) microphone packaging structure and forming method thereof | |
| CN209283511U (en) | A kind of MEMS microphone that signal-to-noise ratio is high | |
| CN205622875U (en) | MEMS microphone | |
| CN201403198Y (en) | Micro-electro-mechanical system microphone | |
| CN101150886A (en) | Encapsulation structure and its encapsulation method for computer electric microphone | |
| CN201294632Y (en) | Silicon microphone | |
| CN201294631Y (en) | Silicon capacitance microphone | |
| CN202425037U (en) | MEMS (Micro Electronic Mechanical System) microphone | |
| CN107113485B (en) | The chip carrier based on lead frame used in the manufacture of MEMS transducer packaging part | |
| CN205616568U (en) | Packaging structure of integrated sensor | |
| CN201966990U (en) | Encapsulating structure for loudspeaker | |
| CN201226593Y (en) | Silicon microphone capable of being welding on two sides | |
| CN206940423U (en) | A kind of encapsulating structure of chip | |
| CN201011742Y (en) | Improved silicon microphone | |
| CN205754730U (en) | A kind of encapsulating structure of mike |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100113 |