CN108753287A - A kind of fluorescent material and its application for LED filament - Google Patents
A kind of fluorescent material and its application for LED filament Download PDFInfo
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- CN108753287A CN108753287A CN201810577749.0A CN201810577749A CN108753287A CN 108753287 A CN108753287 A CN 108753287A CN 201810577749 A CN201810577749 A CN 201810577749A CN 108753287 A CN108753287 A CN 108753287A
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- 239000000463 material Substances 0.000 title claims abstract description 45
- 230000000737 periodic effect Effects 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 229910052718 tin Inorganic materials 0.000 claims abstract description 4
- 229910021475 bohrium Inorganic materials 0.000 claims abstract description 3
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 3
- 229910052730 francium Inorganic materials 0.000 claims abstract description 3
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 3
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 3
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 3
- 150000002367 halogens Chemical class 0.000 claims abstract description 3
- 229910052738 indium Inorganic materials 0.000 claims abstract description 3
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 3
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 3
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 3
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 3
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 3
- 229910052716 thallium Inorganic materials 0.000 claims abstract description 3
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 30
- 239000003292 glue Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 4
- 238000013007 heat curing Methods 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 241001025261 Neoraja caerulea Species 0.000 claims 1
- 230000037237 body shape Effects 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 238000009877 rendering Methods 0.000 abstract description 6
- 239000000843 powder Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000005284 excitation Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 229910020491 K2TiF6 Inorganic materials 0.000 description 5
- 229910004014 SiF4 Inorganic materials 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000714 At alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
- C09K11/665—Halogenides with alkali or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
- C09K11/674—Halogenides
- C09K11/675—Halogenides with alkali or alkaline earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to luminescent material technical field more particularly to a kind of fluorescent material and its application for LED filament, the fluorescent material for LED filament is based on VII B races element in the periodic table of elements is single or+4 valence fluorescent material A of multiple element combinationn（BjCe）：D4+, in formula：A is IA races in the periodic table of elements（H,Li,Na,K,Rb,Cs,Fr）,NH4Single-element or multiple element combination；B is Group IIIA element in the periodic table of elements（B,Al,Ga,In,Tl）, Zn, Ge, Si, Sn single-element or multiple element combination；C is VIIA halogens in the periodic table of elements（F,CI,Br,I,Ai）The combination of single or multiple element；D is VII B races element（Mn,Te,Re,Bh）The combination of single or multiple element；N >=0, j >=0, e >=0.It can realize that the white light of CCT 1800K-8000K, Ra are more than the high color rendering index (CRI) that 80, Ra is more than 90 using the luminescent device of fluorescent material of the present invention.
Description
Technical field
The present invention relates to luminescent material technical field more particularly to a kind of fluorescent materials and its application for LED filament.
Background technology
LED (Light Emitting Diode), light emitting diode are a kind of can to convert electrical energy into consolidating for visible light
The semiconductor devices of state, it can directly be converted electricity to light.The appearance of LED light has relative to ordinary lamps (incandescent lamp etc.)
The advantages that energy saving, long lifespan, applicability are good, the response time is short, environmentally friendly.
There are mainly two types of existing LED visible light devices：A kind of implementation be yellow fluorescent glue (yttrium aluminium garnet YAG) plus
440~470nm of blue chip, excitation yellow light and blue light visible light, low but there is colour rendering indexs, luminous flux is low, and
Can not realization low color temperature CCT≤5000K the shortcomings that；Another implementation is that blue chip 440~470nm excitations yellow is glimmering
520~560nm of optical cement excite simultaneously 610~650nm of nitride red fluorescent powder generate white light, colour rendering index can accomplish Ra >=
80, but as Ra >=90 luminous flux be less than Ra80 when 12%, luminous flux is undesirable.As CCT reductions and/or person CRI increase,
LED light flux usually reduces, substantially less than high color temperature (CCT >=5000K) when leading to low color temperature (CCT≤3000K).
Invention content
The present invention is low in order to overcome colour rendering index present in traditional LED visible light device, and luminous flux is low, and can not reality
The problem of existing low color temperature, provide after a kind of light excitation by 400~490nm wavelength can emission peak wavelength be 600~
The fluorescent material for LED filament of the spectrum of 660nm.
The application that the present invention also provides a kind of for the fluorescent material of LED filament on luminescent device, provides one kind
The semiconductor packing device LED filament of the visible light of 380~780nm can be sent out.
To achieve the goals above, the present invention uses following technical scheme：
A kind of fluorescent material for LED filament, the fluorescent material for LED filament are based on VII in the periodic table of elements
B races element is single or+4 valence fluorescent material A of multiple element combinationn(BjCe)：D4+, in formula：A be the periodic table of elements in IA races (H,
Li、Na、K、Rb、Cs、Fr)、NH4Single-element or multiple element combination；B be the periodic table of elements in Group IIIA element (B, Al,
Ga, In, Tl), Zn, Ge, Si, Sn single-element or multiple element combination；C be the periodic table of elements in VIIA halogens (F, CI,
Br, I, Ai) combination of single or multiple element；D is that VII B races element (Mn, Te, Re, Bh) is single or multiple element combines；Its
In：N >=0, j >=0, e >=0.Such as K2GeF6:Mn4+、K2TiF6:Mn4+、K2SiF4:Mn4+Deng.
Preferably, the fluorescent material for LED filament sends out narrow half-wave wide spectrum after being excited, half-wave is wide
(FWHM)≤25nm。
A kind of luminescent device, including holder, semiconductor chip and fluorescent glue, the fluorescent glue include above-mentioned for LED light
The fluorescent material of silk.
Meaning fluorescent glue of the invention, refers to that the light that can be sent out by semiconductor inspires the fluorescence for giving off another wavelength
Glue, wherein fluorescent glue can also it is above-mentioned for the fluorescent material of LED filament in mix into the yellow with 500~570nm of wavelength
Or yellow-green fluorescence powder, or one or more nitride red fluorescent powders are mixed again.
Preferably, the holder includes substrate and conductive electrode, the holder is that substrate both ends carry positive and negative anodes metal
Conductive terminal structure；
Or conductive circuit layer and positive and negative electrode line construction are furnished on substrate；
Or it is furnished with conductive circuit layer on substrate and carries positive and negative anodes metallic conduction terminal structure at the both ends of substrate simultaneously.
Preferably, the substrate is transparent, translucent or opaque material.
Preferably, the substrate is hard substrate or flexible base board.
Preferably, the semiconductor chip is blue-light LED chip or UV LED chips；The hair of the blue-light LED chip
Light dominant wavelength ranges are in 400~490nm；The luminous dominant wavelength ranges of the UV LED chips are in 350~400nm.
Preferably, fluorescent glue further includes a kind of transparent or semitransparent enclosed material, fluorescent material is mixed with sealing material
Together.
Preferably, the enclosed material is liquid enclosed material or solid-like enclosed material, it is described liquid closed
Material is selected from silica gel, epoxy resin or UV glue；The solid-like enclosed material is selected from heat-curing plastic, glass or quartz.
Preferably, the luminescent device is to be arranged in a matrix on substrate and realized by one or more semiconductor chips
The LED packagings of ohm conducting, the LED packagings electric current by when send out the visible light of 380~780nm, it is such as white
Light, feux rouges, green light, yellow light etc..
The semiconductor chip of the present invention is divided into two kinds of positive cartridge chip and flip-chip, and positive cartridge chip passes through bonding on substrate
Glue (silica type, epoxy resin, silver paste, tin cream, eutectic solder etc.) is fixed on by matrix on substrate, and one is pass through bonding line
(gold thread, closes silver wire, copper wire, aluminum steel etc. at alloy wire) realizes the conducting of chip positive and negative anodes ohm, at the same with holder positive and negative electrode ohm
Conducting, another way are that flip-chip adds brazing metal to be welded on the holder for be furnished with circuit by Reflow Soldering or eutectic to realize
Ohm conducting.
Therefore, the present invention has the advantages that：
(1) provide after a kind of light excitation by 400~490nm wavelength can emission peak wavelength be the new of 600~660nm
Type fluorescent material sends out narrow half-wave wide spectrum, wide (the FWHM)≤15nm of half-wave after excitation；
(2) luminescent device made from the fluorescent material is used, luminous flux and CRI are improved by narrow half-wave wide (FWHM), is realized
The white light of CCT 1800K-8000K, Ra are more than the high color rendering index (CRI) that 80, Ra is more than 90；It disclosure satisfy that star and the Europe of american energy
The requirement of continent ERP standards simultaneously ensures color tolerance≤7SDCM (MacAdam's ellipse be less than 7step), at the same do not reduce product its
His parameter.
Description of the drawings
Fig. 1 is the excitation-emission spectrogram of fluorescent material of the present invention.
Fig. 2 is that the present invention is based on the spectrograms of the luminescent device of above-mentioned fluorescent material.
Fig. 3 is the LED filament formal dress holder appearance diagram of the embodiment of the present invention 1.
Fig. 4 is the LED filament structural schematic diagram of the embodiment of the present invention 1.
Fig. 5 is the LED filament formal dress holder appearance diagram of the embodiment of the present invention 2.
The LED filament structural schematic diagram of Fig. 6 embodiment of the present invention 2.
Fig. 7 is the LED filament upside-down mounting holder appearance diagram of the embodiment of the present invention 3.
The LED filament structural schematic diagram of Fig. 8 embodiment of the present invention 3.
Fig. 9 is the LED filament holder appearance diagram of the embodiment of the present invention 4.
The LED filament structural schematic diagram of Figure 10 embodiment of the present invention 4.
In figure：Substrate 1, metal electrode 2, adhesive glue 3, positive electrode circuit 4, negative electrode circuit 5, line layer 6, semiconductor core
Piece 7, fluorescent glue 8.
Specific implementation mode
Below by specific embodiment, and in conjunction with attached drawing, the technical solutions of the present invention will be further described.
In the present invention, if not refering in particular to, all devices and raw material is commercially available or the industry is common are following
Method in embodiment is unless otherwise instructed this field conventional method.
Embodiment 1
As shown in Figure 3 and Figure 4, a kind of luminescent device, including formal dress holder, semiconductor chip 7 and fluorescent glue 8, the luminescent device
LED filament formal dress holder surface structure it is as shown in Figure 3：The both ends of transparent flexible substrate 1 pass through adhesive glue 3 and metal electricity respectively
Pole 2 is fixedly connected.Specific LED filament structure is as shown in figure 4, semiconductor chip is solid by matrix by epoxy resin bonded adhesives
Be scheduled on transparent hard substrate, the conducting of semiconductor chip positive and negative anodes ohm realized by gold thread, electric current by when send out 380~
The visible light of 780nm.Semiconductor chip is to shine dominant wavelength ranges in the blue-light LED chip of 400~490nm, and substrate is without conducting wire
Circuit.Fluorescent glue is mixed to prepare by silica gel and fluorescent powder, fluorescent powder K2GeF6:Mn4+、K2TiF6:Mn4+、K2SiF4:Mn4+Deng.
Embodiment 2
As shown in Figure 5 and Figure 6, a kind of luminescent device, including formal dress holder, semiconductor chip 7 and fluorescent glue 8, LED filament formal dress
Holder surface structure is as shown in figure 5, the both ends of translucent hard substrate 1 are respectively sleeved on metal electrode 2.Specific LED filament knot
Structure realizes semiconductor core as shown in fig. 6, semiconductor chip is fixed on by matrix on translucent hard substrate by silver paste by copper wire
Piece positive and negative anodes ohm is connected, electric current by when send out the visible light of 380~780nm.Semiconductor chip is the dominant wavelength ranges that shine
In the UV LED chips of 350~400nm, substrate is without wire circuit.Fluorescent glue is mixed to prepare by heat-curing plastic and fluorescent powder, glimmering
Light powder is K2GeF6:Mn4+、K2TiF6:Mn4+、K2SiF4:Mn4+Deng the mixing of the yellow fluorescent powder with wavelength 500-570nm.
Embodiment 3
As shown in Figure 7 and Figure 8, a kind of luminescent device, including upside-down mounting holder, semiconductor chip 7 and fluorescent glue 8, LED filament upside-down mounting
Holder surface structure is as shown in fig. 7, be furnished with conductive circuit layer 6 simultaneously in opaque flexible base board on opaque flexible base board 1
Both ends carry positive electrode circuit 4 and negative electrode circuit 5, and specific LED filament structure is as shown in figure 8, flip-chip semiconductor chip adds
Brazing metal by Reflow Soldering or eutectic be welded on the holder for be furnished with circuit realize ohm conducting, electric current by when send out 380
The visible light of~780nm.Semiconductor chip is blue-light LED chip of the luminous dominant wavelength ranges in 400~490nm.Fluorescent glue by
Epoxy resin and fluorescent powder are mixed to prepare, fluorescent powder K2GeF6:Mn4+、K2TiF6:Mn4+、K2SiF4:Mn4+Deng and wavelength 500-
The mixing of the yellow-green fluorescence powder of 570nm.
Embodiment 4
As shown in Figure 9 and Figure 10, a kind of luminescent device, including formal dress holder, semiconductor chip 7 and fluorescent glue 8, LED filament branch
Frame surface structure carries positive and negative anodes at the both ends of substrate simultaneously as shown in figure 9, being furnished with conductive circuit layer 6 on transparent flexible substrate 1
Metallic conduction terminal metal electrode 2, specific LED filament structure is as shown in Figure 10, and semiconductor chip presses square by eutectic solder
Battle array is fixed on transparent flexible substrate, is added brazing metal to be welded on the holder for be furnished with circuit by Reflow Soldering or eutectic and is realized Europe
Nurse is connected, electric current by when send out the visible light of 380~780nm.Semiconductor chip be shine dominant wavelength ranges 350~
The UV LED chips of 400nm.Fluorescent glue is mixed to prepare by epoxy resin and fluorescent powder, K2GeF6:Mn4+、K2TiF6:Mn4+、
K2SiF4:Mn4+Deng the mixing with nitride red fluorescent powder.
The excitation-emission spectrogram of fluorescent material used in the luminescent device of embodiment 1-4 as shown in Figure 1, the fluorescent material by
To 400~490nm wavelength light excitation after can emission peak wavelength be 600~660nm, the wide light of narrow half-wave is sent out after excitation
Spectrum, wide (the FWHM)≤25nm of half-wave.
The spectrogram of the luminescent device of embodiment 1-4 is as shown in Fig. 2, the luminescent device of 1-4 of the embodiment of the present invention can be real
The white light of existing CCT 1800K-8000K, Ra are more than the high color rendering index (CRI) that 80, Ra is more than 90；Disclosure satisfy that american energy star and
The requirement of European ERP standards simultaneously ensures color tolerance≤7SDCM (MacAdam's ellipse is less than 7step), while not reducing product
Other parameters.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the present invention in any form, and is not surpassing
There are other variations and modifications under the premise of going out the technical solution recorded in claim.
Claims (10)
1. a kind of fluorescent material for LED filament, which is characterized in that the fluorescent material for LED filament is based on member
VII B races element is single in plain periodic table or+4 valence fluorescent material A of multiple element combinationn(BjCe)：D4+, in formula：A is element
IA races (H, Li, Na, K, Rb, Cs, Fr), NH in periodic table4Single-element or multiple element combination；B is in the periodic table of elements
Group IIIA element (B, Al, Ga, In, Tl), Zn, Ge, Si, Sn single-element or multiple element combination；C is in the periodic table of elements
VIIA halogens (F, CI, Br, I, Ai) are single or multiple element combines；D is that VII B races element (Mn, Te, Re, Bh) is single
Or multiple element combination；Wherein：N >=0, j >=0, e >=0.
2. the fluorescent material according to claim 1 for LED filament, which is characterized in that described for the glimmering of LED filament
Luminescent material sends out narrow half-wave wide spectrum after being excited, and half-wave is wide≤15nm.
3. a kind of luminescent device, which is characterized in that including holder, semiconductor chip and fluorescent glue, the fluorescent glue include as weighed
Profit requires the fluorescent material for LED filament described in 1 or 2.
4. luminescent device according to claim 3, which is characterized in that the holder includes substrate and electrode, the holder
Positive and negative anodes metallic conduction terminal structure is carried for substrate both ends；
Or conductive circuit layer and positive and negative electrode line construction are furnished on substrate；
Or it is furnished with conductive circuit layer on substrate and carries positive and negative anodes metallic conduction terminal structure at the both ends of substrate simultaneously.
5. luminescent device according to claim 4, which is characterized in that the substrate is transparent, translucent or opaque material
Material.
6. luminescent device according to claim 4, which is characterized in that the substrate is hard substrate or flexible base board.
7. according to the luminescent device described in claim 3 or 4 or 5 or 6, which is characterized in that the semiconductor chip is blue-ray LED
Chip or UV LED chips；The luminous dominant wavelength ranges of the blue-light LED chip are in 400~490nm；The UV LED chips
The dominant wavelength ranges that shine are in 350~400nm.
8. luminescent device according to claim 7, which is characterized in that the fluorescent glue further includes a kind of transparent or semitransparent
Enclosed material.
9. luminescent device according to claim 8, which is characterized in that the enclosed material is for liquid enclosed material or admittedly
Body shape enclosed material, the liquid enclosed material are selected from silica gel, epoxy resin or UV glue；The solid-like enclosed material is selected from
Heat-curing plastic, glass or quartz.
10. luminescent device according to claim 9, which is characterized in that the luminescent device is to be led by one or more half
Body chip is arranged in a matrix on substrate and realizes that the LED packagings of ohm conducting, the LED packagings pass through in electric current
When send out the visible light of 380~780nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810577749.0A CN108753287A (en) | 2018-06-05 | 2018-06-05 | A kind of fluorescent material and its application for LED filament |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810577749.0A CN108753287A (en) | 2018-06-05 | 2018-06-05 | A kind of fluorescent material and its application for LED filament |
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| CN108753287A true CN108753287A (en) | 2018-11-06 |
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| CN201810577749.0A Pending CN108753287A (en) | 2018-06-05 | 2018-06-05 | A kind of fluorescent material and its application for LED filament |
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Application publication date: 20181106 |