CN201568811U - White light LED backlight - Google Patents
White light LED backlight Download PDFInfo
- Publication number
- CN201568811U CN201568811U CN200920170531XU CN200920170531U CN201568811U CN 201568811 U CN201568811 U CN 201568811U CN 200920170531X U CN200920170531X U CN 200920170531XU CN 200920170531 U CN200920170531 U CN 200920170531U CN 201568811 U CN201568811 U CN 201568811U
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- China
- Prior art keywords
- aluminum nitride
- metal substrate
- thin layer
- white light
- nitride thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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Abstract
The utility model provides a white light LED backlight which includes a metal substrate, a thin aluminum nitride layer adhered on the upper surface of the metal substrate, a plurality of blue light-emitting diodes arranged on the middle position of the thin aluminum nitride layer through eutectic welding, a Schottky diode arranged in a position relatively far from the central part of the blue light-emitting diodes, a plurality of electrodes introduced out from the side surface of the metal substrate, and a fluorescence adhesive layer which is solidified by the fluorescence adhesive coated on the thin aluminum nitride layer, a plurality of blue light-emitting diodes and the Schottky diode. The fluorescence adhesive comprises red, green and orange fluorescent powder. The structure reduces the thermal resistance of the whole apparatus and improves the coloration performance.
Description
Technical field
The utility model relates to a kind of white light LEDs backlight, belongs to technical field of semiconductor device.
Background technology
Because white light LEDs has lot of advantages such as luminous efficiency height, low in energy consumption, life-span length, environmental protection, therefore be considered to be hopeful most to replace in the future the lighting source of conventional light source, recently white light LEDs carried out as the research and development that the backlight of display etc. uses.The concrete structure of existing white light LEDs is, GaN chip and yttrium-aluminium-garnet (YAG) fluorescent material is packaged together makes, wherein, the blue light of GaN chip emission λ p=465nm, Wd=30nm sends gold-tinted after the YAG fluorescent material that contains Ce3+ that high temperature sintering is made is subjected to this blue-light excited.And blue chip is installed in the bowl-type reflection cavity, is covered with the thin resin layer that is mixed with YAG fluorescent material.The part of the blue light that above-mentioned blue chip sends is absorbed by fluorescent material, and the yellow light mix that another part blue light and fluorescent material send just can obtain white light.Thisly obtain the method for white light by blue chip, simple structure, with low cost, technology maturity is high.
But,, cause being difficult to effectively controlling chromaticity coordinates and colour temperature because the composition of the YAG fluorescent material that is covered is fixed, and the color of the white light pipe that so encapsulates is soft inadequately, and colour rendering is relatively poor, and colour rendering index is also lower, usually between 50-80, be difficult to satisfy people's requirement.Moreover the light decay speed of YAG fluorescent material is very fast, and the lost of life of white light can't obtain stable light and export and keep higher device lifetime, is difficult to satisfy the long-life requirement of people to lighting source.
The utility model content
The utility model is to make in order to solve the above-mentioned problems in the prior art point, and its purpose is to provide a kind of and had not only reduced thermal resistance, but also improved the white light LEDs backlight of color developing.
To achieve these goals, the utility model provides a kind of backlight, and it comprises: metal substrate; Aluminum nitride thin layer is attached to the upper surface of described metal substrate; A plurality of blue LEDs are arranged on the described aluminum nitride thin layer by eutectic weldering mode, and are positioned at the medium position of described aluminum nitride thin layer; Schottky diode is arranged on the farther position of distance center portion with respect to described blue LED; A plurality of electrodes are drawn from the side of described metal substrate, are used for being electrically connected with described a plurality of blue LEDs and described Schottky diode; And the fluorescence glue-line, solidify by the fluorescent glue of the top that covers described aluminum nitride thin layer and a plurality of blue LED and Schottky diode and to form, described fluorescent glue comprises red, green, fluorescent orange powder.
In addition, preferred construction is that described a plurality of blue LEDs, described Schottky diode are smooth flat with the bottom surface of described aluminum nitride thin layer combination.
In addition, preferred construction is, forms the retaining edge of given sizes in four sides of described metal substrate, and the upper edge on this retaining edge exceeds certain size and concordant with the upper surface of described fluorescence glue-line than the upper surface of metal substrate.
Moreover, preferred construction is, red, green, the fluorescent orange powder that comprise in the described fluorescent glue are respectively: composition is the TMR-300595-01C090 type fluorescent material of Silicate, composition is the TMG300530-01B200 type fluorescent material of Silicate, and composition is the TMO100582-390480 type fluorescent material of Silicate.
In addition, preferred construction is, described fluorescence glue-line is to have mixed the fluorescent glue that DOW CORNING 6550 silica gel of TMR-300595-01C090 type fluorescent material that the 0.30g composition is Silicate, TMG300530-01B200 type fluorescent material that the 0.69g composition is Silicate, TMO100582-390480 type fluorescent material that the 0.01g composition is Silicate and 10g constitute by coating to form.
According to aforesaid structure, by the eutectic weldering a plurality of blue LEDs are arranged on the aluminum nitride thin layer, thereby improved the integrated structure of blue LED, therefore greatly reduced the thermal resistance after entire product encapsulates, improved heat dispersion with aluminum nitride thin layer and metal substrate.Moreover, because red, green, orange fluorescent material forms fluorescent glue, improved color developing significantly.
Description of drawings
By below in conjunction with accompanying drawing embodiment being described, above-mentioned feature of the present utility model and technological merit will become apparent and understand easily.
Fig. 1 is the vertical view of the concrete structure of the white light LEDs backlight that relates to of expression the utility model.
Fig. 2 is the partial sectional view of the concrete structure of the white light LEDs backlight that relates to of expression the utility model.
Fig. 3 is the equivalent circuit figure of the electrical connection of blue LED in the white light LEDs backlight that relates to of expression the utility model and Schottky diode.
Reference numeral
1: metal substrate, 2: aluminum nitride thin layer,
3: electrode, 4,4 ': blue LED,
5: Schottky diode, 6: the retaining edge,
7: the fluorescence glue-line
The specific embodiment
Below, be described with reference to the accompanying drawings the specific embodiment of the present utility model.
Fig. 1 is the vertical view of the concrete structure of the white light LEDs backlight that relates to of expression the utility model, and Fig. 2 is the partial sectional view of the concrete structure of the white light LEDs backlight that relates to of expression the utility model.In order clearly to represent the concrete structure of white light LEDs backlight, ignored the existence of fluorescence glue-line among this figure, and shown the structure that should be coated under the fluorescence glue-line.As shown in Figure 1 and Figure 2, the white light LEDs backlight that present embodiment relates to comprises: metal substrate 1, and for example the copper base by 1mm thickness constitutes, and establishes it in the present embodiment and is of a size of 6mm * 4mm; Aluminum nitride thin layer 2 is attached to the upper surface of described metal substrate 2; 2 blue LEDs 4,4 ' are arranged on the described aluminum nitride thin layer 2 by eutectic weldering mode, and are positioned at the medium position of described aluminum nitride thin layer 2; 1 Schottky diode 5 is positioned at the farther position of distance center portion with respect to 2 blue LEDs 4,4 ', is fixed on the described aluminum nitride thin layer 2 by elargol; 6 electrodes are drawn from the side of described metal substrate 1.
Wherein, described blue LED 4,4 ', Schottky diode 5 are smooth flat with the bottom surface of described aluminum nitride thin layer 2 combinations.
In addition, paste the PC materials of white in four sides of described metal substrate 1, the retaining that forms given size is along 6, and the upper edge of this retaining along 6 exceeds given size than the upper surface of metal substrate 1, in the present embodiment, described retaining exceeds about the upper surface 0.5mm of metal substrate 1 along 6.
2 blue LEDs being provided with by eutectic weldering on described aluminum nitride thin layer 24,4 ' are connected in series by the spun gold weldering, and, described 2 blue LEDs 4,4 ' and Schottky diode 5 between be connected in parallel.Its road of equal value as shown in Figure 3.
In addition, according to the design of white light LEDs backlight, described 2 blue LEDs 4,4 ' and each pin of Schottky diode 5 link respectively on 6 electrodes 3.At this, for example blue LED adopts the light emitting diode of 0.2W, and it can send the blue light of 460nm～462.5nm, and brightness is 2000mcd.
In addition, above described metal substrate 1, apply the fluorescent glue that mixes by red fluorescence powder, green emitting phosphor, fluorescent orange powder and DOW CORNING silica gel equably, form fluorescence glue-line 7, this fluorescence glue-line 7 covers described 2 blue LEDs 4,4 ' and described Schottky diode 5, and fluorescence glue-line 7 upper surfaces after the coating are with concordant along 6 upper edge by described retaining.In the present embodiment, for example, it is the TMR-300595-01C090 type fluorescent material of Silicate that described red fluorescence powder adopts composition, it is the TMG300530-01B200 type fluorescent material of Silicate that described green emitting phosphor adopts composition, it is the TMO100582-390480 type fluorescent material of Silicate that described fluorescent orange powder adopts composition, and described DOW CORNING silica gel adopts 6550 silica gel.Preferred structure is, described fluorescent glue is that DOW CORNING 6550 silica gel with the described fluorescent orange powder of the described green emitting phosphor of the described red fluorescence powder of 0.30g, 0.69g, 0.01g and 10g mix in proportion.
In the present embodiment, because the fluorescent glue that applies on blue led chips comprises red, green, orange three-color phosphor, therefore by adjusting three's ratio, the ratio that can regulate each coloured light neatly.When blue LED applies predetermined electric current, described fluorescent orange powder can remedy deficiency of all kinds, makes the white light that finally sends more near daylight, has improved colour rendering, chromaticity coordinates can reach X=0.3218, Y=0.3246, and white light is comfortable more soft.
Below, detailed description has the manufacturing process of the white light LEDs backlight of said structure.
At first, process the metal substrate 1 of for example thick 1mm, long 6mm, wide 4mm.
Secondly, the upper surface at described metal substrate 1 adheres to aluminum nitride thin layer 2.
Then, on described metal substrate 1, draw 6 electrodes 3, and plate for example golden film of 2um thickness of one deck in the entire upper surface of aluminum nitride thin layer 2.
Then, utilize for example GJL-225 eutectic stove of No.2 Research Institute of Electronics Industry Company production, be welded in by eutectic 2 blue LEDs 4,4 ' are set respectively on the aluminum nitride thin layer 2 that is coated with golden film, described 2 blue LEDs 4,4 ' are positioned at the medium position of aluminum nitride thin layer 2.Then, aluminum nitride thin layer 2 be positioned at the farther position of distance center portion with respect to 2 blue LEDs 4,4 ', with elargol a Schottky diode 5 is installed.At this, above-mentioned 2 blue LEDs 4,4 ' and Schottky diode 5 be smooth flat with the bottom surface of aluminum nitride thin layer 2 combinations.
Afterwards, after by spun gold welding 2 blue LEDs 4,4 ' being connected in series, 2 blue LEDs will connecting again 4,4 ' and Schottky diode 5 be together in parallel, and then be connected respectively on separately the electrode 3.
Then, paste the PC material of white in the side of metal substrate 1, the retaining that forms given size is along 6, and the upper edge of this retaining along 6 exceeds given size than the upper surface of metal substrate.
Then, mix TMR-300595-01C090 type fluorescent material that the 0.30g composition is Silicate, TMG300530-01B200 type fluorescent material that the 0.69g composition is Silicate, TMO100582-390480 type fluorescent material that the 0.01g composition is Silicate and DOW CORNING 6550 silica gel of 10g, after mixing, vacuumize the stipulated time, for example 15 minutes.Afterwards, utilize point gum machine the above-mentioned fluorescent glue for preparing evenly to be coated on the aluminum nitride thin layer 2 that is formed at metal substrate 1 top, to form fluorescence glue-line 7, and, this fluorescence glue-line 7 covers described 2 blue LEDs 4 and described Schottky diode 5, simultaneously, the upper surface of this this fluorescence glue-line 7 is concordant along 6 upper edge with the described retaining that is made of described PC material.
At last, metal substrate 1 is sent into baking oven, baking was taken out after the stipulated time, has promptly finished the manufacturing process of the white light LEDs backlight that the utility model relates to.
According to aforesaid the utility model, owing to 2 blue LEDs are arranged on the aluminum nitride thin layer by the eutectic weldering, thereby improved the integrated structure of blue LED with aluminum nitride thin layer and metal substrate, therefore greatly reduce the thermal resistance after entire product encapsulates, improved heat dispersion.Moreover, owing to do not use YAG fluorescent material, and be to use the fluorescent glue that has mixed TMR-300595-01C090 type fluorescent material that composition is Silicate, TMG300530-01B200 type fluorescent material that composition is Silicate, TMO100582-390480 type fluorescent material that composition is Silicate, solve the problem of the colour rendering difference of white light LEDs backlight, improved color developing significantly.
In the above-described embodiment, be that example illustrates so that 2 blue LEDs to be set, but the quantity of blue LED is not limited to 2, and the blue LED more than 3 also can be set; Moreover, be that example illustrates so that 6 electrodes to be set, but number of electrodes is not limited to 6, can be a plurality of electrodes of other quantity.
Under above-mentioned instruction of the present utility model; those skilled in the art can carry out various improvement and distortion on the basis of the foregoing description; and these improvement and distortion; all drop in the protection domain of the present utility model; those skilled in the art should be understood that; above-mentioned specific descriptions are just better explained the purpose of this utility model, and protection domain of the present utility model is limited by claims and equivalent thereof.
Claims (3)
1. a white light LEDs backlight is characterized in that, comprising:
Metal substrate;
Aluminum nitride thin layer is attached to the upper surface of described metal substrate;
A plurality of blue LEDs are arranged on the described aluminum nitride thin layer by eutectic weldering mode, and are positioned at the medium position of described aluminum nitride thin layer;
Schottky diode is arranged on the farther position of distance center portion with respect to described blue LED;
A plurality of electrodes are drawn from the side of described metal substrate, are used for being electrically connected with described a plurality of blue LEDs and described Schottky diode; And
The fluorescence glue-line is solidified by the fluorescent glue of the top that covers described aluminum nitride thin layer and a plurality of blue LED and Schottky diode and to form, described fluorescent glue comprises red, green, fluorescent orange powder.
2. white light LEDs backlight as claimed in claim 1 is characterized in that,
Described a plurality of blue LED, described Schottky diode are smooth flat with the bottom surface of described aluminum nitride thin layer combination.
3. white light LEDs backlight as claimed in claim 1, it is characterized in that, form the retaining edge of given size in four sides of described metal substrate, the upper edge on this retaining edge exceeds certain size and concordant with the upper surface of described fluorescence glue-line than the upper surface of metal substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920170531XU CN201568811U (en) | 2009-08-06 | 2009-08-06 | White light LED backlight |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920170531XU CN201568811U (en) | 2009-08-06 | 2009-08-06 | White light LED backlight |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201568811U true CN201568811U (en) | 2010-09-01 |
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ID=42661101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200920170531XU Expired - Fee Related CN201568811U (en) | 2009-08-06 | 2009-08-06 | White light LED backlight |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201568811U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101988656B (en) * | 2009-08-06 | 2013-08-07 | 歌尔声学股份有限公司 | White light-emitting diode (LED) backlight source and manufacturing method thereof |
-
2009
- 2009-08-06 CN CN200920170531XU patent/CN201568811U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101988656B (en) * | 2009-08-06 | 2013-08-07 | 歌尔声学股份有限公司 | White light-emitting diode (LED) backlight source and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100901 Termination date: 20140806 |
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| EXPY | Termination of patent right or utility model |