TWI697131B - White light-emitting diode structure and manufacturing method thereof - Google Patents

White light-emitting diode structure and manufacturing method thereof Download PDF

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TWI697131B
TWI697131B TW108133261A TW108133261A TWI697131B TW I697131 B TWI697131 B TW I697131B TW 108133261 A TW108133261 A TW 108133261A TW 108133261 A TW108133261 A TW 108133261A TW I697131 B TWI697131 B TW I697131B
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phosphor
emitting diode
white light
diode structure
powder
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TW202114247A (en
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林俊良
黃立宇
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崑山科技大學
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Abstract

The present invention discloses a white light-emitting diode structure and a manufacturing method thereof. The white light-emitting diode structure comprises a base having a recessed portion and an opening, a light-emitting diode chip disposed at a bottom of the recessed portion, an encapsulant gel filled in the recessed portion for encapsulating the light-emitting diode chip, and a fluorescent glass covering the opening of the base. The encapsulant gel comprises a first fluorescent material and a silicone material, and the fluorescent glass is prepared by sintering a mixture having glass powders and a second fluorescent material at a low temperature. Accordingly, the white light-emitting diode structure of the present invention has a continuous and flat spectrum in the range of visible light.

Description

白光發光二極體結構及其製造方法 White light emitting diode structure and manufacturing method thereof

本發明係關於一種白光發光二極體結構及其製造方法,在可見光波段具有連續且平坦的光譜。 The invention relates to a white light emitting diode structure and a manufacturing method thereof, which have a continuous and flat spectrum in the visible light band.

發光二極體(Light-emitting diode,簡稱LED)是一種能發光的半導體電子元件,能將電能轉化成光能;目前製作白光發光二極體的方法包含利用藍光發光二極體晶粒激發包含黃色螢光材料的封裝膠或螢光玻璃,黃色螢光材料被藍光激發後會發出黃光,黃光再與未被吸收的藍光混合並互補形成白光,例如中華民國專利第TW I396303(B)號發明專利,為具螢光粉的基板與白光LED光源元件的製造方法,具螢光粉的基板的製造方法包括將螢光粉與助熔劑均勻混合並覆燒以形成一半熔狀的玻璃體,將玻璃體研磨成螢光粉體並塗佈於一基板上,以及加熱螢光粉體使其成為螢光膜,螢光膜受到藍光LED晶粒的激發後,便會發出白色光;但此方法所產生的白光色溫偏高,且因發光的紅光光譜較弱以至於演色性較差,平均演色性指數(color rendering index,CRI)較低。 Light-emitting diode (LED) is a light-emitting semiconductor electronic component that can convert electrical energy into light energy; current methods of making white light-emitting diodes include the use of blue-light-emitting diode grain excitation to include Encapsulation glue or fluorescent glass of yellow fluorescent material. After being excited by blue light, the yellow fluorescent material will emit yellow light. The yellow light is then mixed with unabsorbed blue light and complementary to form white light, for example, TW I396303(B) The invention patent is a method for manufacturing a substrate with phosphor powder and a white LED light source element. The method for manufacturing a substrate with phosphor powder includes uniformly mixing and firing the phosphor powder and flux to form a semi-melted glass body. Grind the glass body into phosphor powder and coat it on a substrate, and heat the phosphor powder to make it into a fluorescent film. After the fluorescent film is excited by the blue LED die, it will emit white light; but this method The color temperature of the generated white light is high, and because the red light spectrum is weak, the color rendering is poor, and the average color rendering index (CRI) is low.

又,另一種製作白光發光二極體的方法,是將多色的螢光粉添加於發光二極體的封裝膠中,例如在透明封裝膠內混合一定比例的藍色螢光粉、綠色螢光粉或紅色螢光粉,且經由藍光發光二極體晶粒激發之後,以產生白光;例如中國專利第CN109659420(A)號專利公開案為一種高顯色、寬光譜的白光LED光源,揭露在矽膠內混合藍綠螢光粉、多種不同波峰的綠螢光粉以及紅螢光粉,以獲得一LED螢光膠;但是此種白光發光二極體,發光效率較不足,且封裝膠或是螢光膠具有易老化的缺失。 In addition, another method for manufacturing white light-emitting diodes is to add multi-color phosphors to the encapsulant of the light-emitting diodes. For example, mix a certain proportion of blue phosphors and green phosphors in the transparent encapsulant Light pink or red phosphor, and excited by blue light-emitting diode grains to produce white light; for example, Chinese Patent No. CN109659420(A) Patent Publication is a white LED light source with high color rendering and wide spectrum, disclosed Mixing blue-green phosphors, green phosphors with different wave crests and red phosphors in silicone rubber to obtain an LED fluorescent glue; but this white light-emitting diode has insufficient luminous efficiency, and the encapsulation glue or It is the lack of fluorescent glue that is prone to aging.

今,發明人有鑑於現有白光發光二極體仍有不足之處,於是乃一本孜孜不倦之精神,並藉由其豐富專業知識及多年之實務經驗所輔佐,而加以改善,並據此研創出本發明。 Now, in view of the shortcomings of the existing white light-emitting diodes, the inventor is a tireless spirit, which is supplemented by his rich professional knowledge and many years of practical experience, and improved according to this research. this invention.

本發明係關於一種白光發光二極體結構及其製造方法,白光發光二極體結構發出的白光在可見光波段具有連續且平坦的光譜。 The invention relates to a white light emitting diode structure and a manufacturing method thereof. The white light emitted by the white light emitting diode structure has a continuous and flat spectrum in the visible light band.

本發明之白光發光二極體結構包含一基座,一第一電極與一第二電極,一發光二極體晶片,一封裝膠體以及一螢光玻璃;基座包含一容置槽與一開口;第一電極與第二電極係設置於容置槽中,發光二極體晶片係放置於容置槽中,並電性連接於第一電極與第二電極;封裝膠體填充於容置槽中,並包覆發光二極體晶片,封裝膠體包含一第一螢光粉材料以及矽膠材料;以及螢光玻璃係蓋設於容置槽的開口,且螢光玻璃係將一玻璃粉與一第二螢光粉材料經由一低溫燒結步驟所製得。 The white light-emitting diode structure of the present invention includes a base, a first electrode and a second electrode, a light-emitting diode chip, an encapsulant and a fluorescent glass; the base includes a receiving groove and an opening ; The first electrode and the second electrode are disposed in the containing groove, the light-emitting diode chip is placed in the containing groove, and is electrically connected to the first electrode and the second electrode; the packaging gel is filled in the containing groove , And encapsulates the light-emitting diode chip, the encapsulant contains a first phosphor material and silicone material; and the fluorescent glass cover is set in the opening of the accommodating groove, and the fluorescent glass is a glass powder and a first The two phosphor materials are made through a low temperature sintering step.

本發明白光發光二極體結構的製造方法包含:步驟一,將一發光二極體晶片固定於一基座的一容置槽底部,並將該發光二極體晶片電性連接於第一電極與第二電極,其中基座設有一開口;步驟二,將一封裝膠體填充到基座的容置槽內,並包覆發光二極體晶片,其中封裝膠體包含矽膠材料與第一螢光粉材料;以及步驟三,將一螢光玻璃蓋設於基座的開口,其中螢光玻璃係將玻璃粉與第二螢光粉材料經由一低溫燒結步驟所製得。 The manufacturing method of the white light emitting diode structure of the present invention includes the following steps: Step 1, fix a light emitting diode chip to the bottom of a receiving groove of a base, and electrically connect the light emitting diode chip to the first electrode And the second electrode, wherein the base is provided with an opening; step two, a packaging gel is filled into the accommodating groove of the base, and the light-emitting diode chip is covered, wherein the packaging gel includes a silicone material and the first phosphor Materials; and step three, a fluorescent glass cover is placed on the opening of the base, wherein the fluorescent glass is made by a glass frit and a second phosphor material through a low temperature sintering step.

於本發明之一實施例中,發光二極體晶片為藍光發光二極體晶片。 In one embodiment of the invention, the light-emitting diode chip is a blue light-emitting diode chip.

於本發明之一實施例中,封裝膠體包含10~30wt%之第一螢光粉材料與剩餘百分比之矽膠材料。 In an embodiment of the invention, the encapsulating colloid includes 10-30 wt% of the first phosphor material and the remaining percentage of silicone material.

於本發明之一實施例中,第一螢光粉材料包含一綠色螢光粉,一青色螢光粉以及一紅色螢光粉。 In one embodiment of the present invention, the first phosphor material includes a green phosphor, a cyan phosphor, and a red phosphor.

於本發明之一實施例中,第一螢光粉材料包含10wt%綠色螢光粉,3wt%青色螢光粉以及0.8wt%紅色螢光粉。 In one embodiment of the present invention, the first phosphor material includes 10wt% green phosphor powder, 3wt% cyan phosphor powder and 0.8wt% red phosphor powder.

於本發明之一實施例中,綠色螢光粉之峰值波長為515nm,平均粒徑大小為12nm,該青色螢光粉之青色螢光粉的峰值波長為495nm,平均粒徑大小為20nm,以及該紅色螢光粉之的峰值為波長660nm,平均粒徑大小為14nm。 In one embodiment of the present invention, the peak wavelength of the green phosphor is 515 nm, the average particle size is 12 nm, the peak wavelength of the cyan phosphor of the cyan phosphor is 495 nm, and the average particle size is 20 nm, and The peak value of the red phosphor is 660 nm, and the average particle size is 14 nm.

於本發明之一實施例中,第二螢光粉材料為一釔鋁石榴石(YAG)螢光粉材料。 In an embodiment of the invention, the second phosphor material is a yttrium aluminum garnet (YAG) phosphor material.

於本發明之一實施例中,白光發光二極體的光輸出通量為100~150流明,相對色溫為4000~4500K,顯色指數(CRI)之R9大於70,且平均演色性指數(Ra)大於90。 In one embodiment of the present invention, the light output flux of the white light emitting diode is 100 to 150 lumens, the relative color temperature is 4000 to 4500K, the color rendering index (CRI) R9 is greater than 70, and the average color rendering index (Ra ) Greater than 90.

藉此,本案之白光發光二極體結構及其製造方法,藉由同時使用封裝膠體以及螢光玻璃,且利用最佳比例的螢光材料組合,以製造出在可見光波段具有連續且平坦光譜的白光發光二極體結構。 In this way, the white light emitting diode structure and its manufacturing method of this case, by using encapsulating colloid and fluorescent glass at the same time, and using the optimal ratio of fluorescent material combination, to produce a continuous and flat spectrum in the visible light band White light emitting diode structure.

1:基座 1: pedestal

11:容置槽 11: accommodating slot

12:開口 12: opening

2:第一電極 2: the first electrode

3:第二電極 3: second electrode

4:發光二極體晶片 4: LED chip

41:銀膠 41: Silver plastic

5:封裝膠體 5: encapsulating colloid

51:綠色螢光粉 51: Green phosphor

52:青色螢光粉 52: Cyan phosphor

53:紅色螢光粉 53: Red phosphor

6:螢光玻璃 6: Fluorescent glass

7:導電金屬線 7: conductive metal wire

第一圖:本案白光發光二極體結構之剖面圖。 The first picture: the cross-sectional view of the white light emitting diode structure in this case.

第二圖:本案白光發光二極體結構之製作流程圖。 Figure 2: The flow chart of the white light emitting diode structure in this case.

第三圖:本案含有不同比例之綠色螢光粉之封裝膠體之發光二極體的可見光光譜分析圖。 Third figure: Visible light spectrum analysis diagram of light-emitting diodes containing encapsulating colloids of green phosphors in different proportions in this case.

第四圖:本案含有10wt%綠色螢光粉與不同比例之青色螢光粉之封裝膠體之發光二極體的可見光光譜分析圖。 Fourth figure: Visible light spectrum analysis diagram of the light-emitting diode of the encapsulating colloid containing 10wt% green phosphor and different proportion of cyan phosphor in this case.

第五圖:本案含有10wt%綠色螢光粉、3wt%青色螢光粉與不同比例之紅色螢光粉之封裝膠體之發光二極體的可見光光譜分析圖。 Fifth figure: Visible light spectrum analysis diagram of the light-emitting diode of the encapsulating colloid containing 10wt% green phosphor powder, 3wt% cyan phosphor powder and different proportion of red phosphor powder in this case.

第六圖:本案含有10wt%綠色螢光粉、3wt%青色螢光粉與0.8wt%螢光粉之封裝膠體之發光二極體的可見光光譜分析圖。 Sixth figure: Visible light spectrum analysis diagram of the light-emitting diode of the encapsulating colloid containing 10wt% green phosphor powder, 3wt% cyan phosphor powder and 0.8wt% phosphor powder in this case.

本發明之目的及其結構功能上的優點,將依據以下圖面所示,配合具體實施例予以說明,俾使審查委員能對本發明有更深入且具體之瞭解。 The purpose of the present invention and its structural and functional advantages will be explained based on the following figures and in conjunction with specific embodiments, so that the reviewers can have a more in-depth and specific understanding of the present invention.

本發明係關於一種白光發光二極體結構及其製造方法,白光發光二極體結構在可見光波段具有連續且平坦的光譜。 The invention relates to a white light emitting diode structure and a method for manufacturing the same. The white light emitting diode structure has a continuous and flat spectrum in the visible light band.

請參閱第一圖,本發明之白光發光二極體結構包含一基座(1),一第一電極(2),一第二電極(3),一發光二極體晶片(4),一封裝膠體(5)以及一螢光 玻璃(6)。基座(1)包含一容置槽(11)與一開口(12),第一電極(2)與第二電極(3)係設置於容置槽(11)底部,發光二極體晶片(4)亦設置於容置槽(11)底部,並與第一電極(2)與第二電極(3)電性連接;封裝膠體(5)填充於容置槽(11)內,並包覆住第一電極(2)、第二電極(3)以及發光二極體晶片(4),封裝膠體(5)包含第一螢光粉材料與矽膠,第一螢光粉材料中又包含綠色螢光粉(51)、青色螢光粉(52)與紅色螢光粉(53);螢光玻璃(6)蓋設並固定於基座(1)的開口(12),其中螢光玻璃(6)係將一玻璃粉與一第二螢光粉材料經由低溫燒結步驟所製得。 Please refer to the first figure, the white light emitting diode structure of the present invention includes a base (1), a first electrode (2), a second electrode (3), a light emitting diode chip (4), a Encapsulation gel (5) and a fluorescent Glass (6). The base (1) includes an accommodating groove (11) and an opening (12). The first electrode (2) and the second electrode (3) are disposed at the bottom of the accommodating groove (11), and the light-emitting diode chip ( 4) It is also arranged at the bottom of the accommodating groove (11) and is electrically connected to the first electrode (2) and the second electrode (3); the encapsulant (5) is filled in the accommodating groove (11) and covered Housing the first electrode (2), the second electrode (3) and the light emitting diode chip (4), the encapsulating colloid (5) contains the first phosphor material and the silicon gel, and the first phosphor material contains the green phosphor Light powder (51), cyan phosphor (52) and red phosphor (53); the fluorescent glass (6) is covered and fixed to the opening (12) of the base (1), wherein the fluorescent glass (6) ) Is prepared by a glass frit and a second phosphor material through a low temperature sintering step.

此外,藉由下述具體實施例,可進一步證明本發明可實際應用之範圍,但不意欲以任何形式限制本發明之範圍。 In addition, the following specific examples can further prove the practical application of the present invention, but it is not intended to limit the scope of the present invention in any form.

一、白光發光二極體結構的製造 1. Manufacture of white light emitting diode structure

(一)、螢光玻璃製造 (1) Manufacturing of fluorescent glass

本案所使用的螢光玻璃,係將玻璃粉與釔鋁石榴石(YAG)螢光粉以重量比87:13的比例混勻,經過機器擠壓之後,以650℃之溫度進行燒結,以製成螢光碇;將螢光碇進一步進行切片、研磨並拋光,最後再利用雷射切割的技術,將其切割成所需要的大小,本實施例中,所切割的大小為5×5mm2The fluorescent glass used in this case is a mixture of glass powder and yttrium aluminum garnet (YAG) fluorescent powder in a weight ratio of 87:13. After being extruded by a machine, it is sintered at a temperature of 650°C to produce Into a fluorescent slab; further slicing, grinding and polishing the fluorescent slab, and finally using laser cutting technology to cut it into the required size. In this embodiment, the cut size is 5×5mm 2 .

(二)、白光發光二極體結構製造 (Two), white light emitting diode structure manufacturing

請一併參見第一圖與第二圖,先將第一電極(2)與第二電極(3)固設於基座(1)的底部,其中第一電極(2)與第二電極(3)為相反的電極,例如第一電極(2)為正極(anode)時,第二電極(3)便為負極(cathode);將發光二極體晶片(4)利用銀膠(41)固定於第一電極(2)或第二電極(3)上,本實施例中,發光二極體晶片(4)以銀膠(41)固定於第二電極(3)上;接著,將發光二極體晶片(4)連接上導電金屬線(7),例如導電金線,並對應連接到第一電極(2),以使發光二極體晶片(4)、第 一電極(2)與第二電極(3)電性連接;接著,配製封裝膠體(5),本案所使用的封裝膠體(5)中包含矽膠(silicone)與10~30wt%的第一螢光粉材料,將第一螢光粉材料與矽膠均勻混合後以獲得封裝膠體(5),再把封裝膠體(5)填充至底座(1)的容置槽(11)中,例如以點膠的方式注入容置槽(11),再將封裝膠體(5)以150℃作用4小時,以烘乾封裝膠體(5);最後,再將以玻璃粉與釔鋁石榴石(YAG)螢光粉製備的螢光玻璃(6)覆蓋並固定於底座(1)的開口(12),以完成本案白光發光二極體結構。 Please refer to the first picture and the second picture together, first fix the first electrode (2) and the second electrode (3) on the bottom of the base (1), wherein the first electrode (2) and the second electrode ( 3) Opposite electrodes, for example, when the first electrode (2) is an anode, the second electrode (3) is a cathode (cathode); the light-emitting diode wafer (4) is fixed with silver glue (41) On the first electrode (2) or the second electrode (3), in this embodiment, the light-emitting diode wafer (4) is fixed on the second electrode (3) with silver glue (41); then, the light-emitting diode The diode wafer (4) is connected with a conductive metal wire (7), such as a conductive gold wire, and is correspondingly connected to the first electrode (2), so that the light-emitting diode wafer (4), the first One electrode (2) is electrically connected to the second electrode (3); then, an encapsulating colloid (5) is prepared. The encapsulating colloid (5) used in this case contains silicone and 10~30wt% of the first fluorescent light Powder material, evenly mix the first phosphor material and the silicone rubber to obtain the encapsulating colloid (5), and then fill the encapsulating colloid (5) into the accommodating groove (11) of the base (1), for example, by dispensing Inject into the accommodating tank (11), and then apply the encapsulating colloid (5) at 150 ℃ for 4 hours to dry the encapsulating colloid (5); finally, the glass powder and yttrium aluminum garnet (YAG) fluorescent powder The prepared fluorescent glass (6) covers and is fixed to the opening (12) of the base (1) to complete the white light emitting diode structure in this case.

本實施例所使用的發光二極體晶片(4)為氮化銦鎵(InGaN)藍光發光二極體晶片,尺寸為45×45mm2,所發出的可見光主波長為460nm的藍光,操作電流為350mA;本案利用發光二極體晶片(4)發出的藍光激發封裝膠體(5)中的第一螢光粉材料,以及螢光玻璃(6)中的YAG螢光粉,以產生白光。 The light-emitting diode chip (4) used in this embodiment is an indium gallium nitride (InGaN) blue light-emitting diode chip with a size of 45×45mm 2 , the visible light emitted has a blue wavelength of 460nm, and the operating current is 350mA; in this case, the blue light emitted from the light-emitting diode chip (4) is used to excite the first phosphor material in the encapsulation gel (5) and the YAG phosphor in the fluorescent glass (6) to generate white light.

(三)、第一螢光粉材料 (3) First phosphor material

(1)綠色螢光粉 (1) Green phosphor

此試驗測試以含有10wt%、15wt%或20wt%綠色螢光粉的封裝膠體,所製備的白光發光二極體結構的發光光譜,所使用的綠色螢光粉峰值波長為515nm,平均粒徑大小為12nm,可為但不限於鋁酸鹽(Aluminates)螢光粉材料;請參見第三圖,以含有綠色螢光粉(GreenP)封裝膠體製成的白光發光二極體結構,發出的光譜具有兩個明顯的波峰,第一個波峰的主峰落在460nm,第二個波峰主峰落在約550nm;又,以加入10wt%綠色螢光粉(GreenP)的組別,第一波峰的強度較強,故後續便使用加入10wt%綠色螢光粉(GreenP)的封裝膠體。 In this test, the luminescence spectrum of the white light-emitting diode structure prepared with the encapsulating colloid containing 10wt%, 15wt% or 20wt% green phosphor powder, the peak wavelength of the green phosphor powder used is 515nm, and the average particle size 12nm, which can be but not limited to aluminate phosphor material; please refer to the third figure, the white light emitting diode structure made of green phosphor (Green P ) encapsulating colloid, the spectrum emitted There are two distinct peaks. The main peak of the first peak falls at 460nm, and the main peak of the second peak falls at about 550nm. In addition, with the addition of 10wt% green phosphor (Green P ), the intensity of the first peak It is stronger, so the packaging gel with 10wt% green phosphor (Green P ) added will be used later.

(2)青色螢光粉 (2) Cyan phosphor

本試驗使用包含0.5wt%、1.0wt%與3wt%之青色螢光粉,與10wt%綠色螢光粉的封裝膠體,所製備的白光發光二極體結構的光譜;此實施例所使用的青色螢光粉的峰值波長為495nm,平均粒徑大小為20nm,可為但不限於氧化氮(Nitrogen oxides,NOX)材料;請參見第四圖,0.5wt%青色螢光粉(CyanP)組以及1.0wt%青色螢光粉(CyanP)組,所發出的光譜圖具有兩個波峰,第一個波峰主峰落在460nm,第二個波峰約為550nm;加入3wt%青色螢光粉(CyanP)組,其主要波峰範圍介於500~600nm之間,且具有一較平坦的光譜,故選擇含有10wt%綠色螢光粉(GreenP)以及3wt%青色螢光粉(CyanP)的封裝膠體,繼續進行以下的試驗。 In this experiment, the encapsulating colloid containing 0.5wt%, 1.0wt% and 3wt% cyan phosphor and 10wt% green phosphor was used. The spectrum of the white light emitting diode structure prepared; the cyan used in this example The peak wavelength of the phosphor is 495nm, and the average particle size is 20nm, which can be but not limited to Nitrogen oxides (NO X ) materials; see the fourth figure, 0.5wt% cyan phosphor (Cyan P ) group And 1.0wt% cyan phosphor (Cyan P ) group, the emitted spectrum has two peaks, the main peak of the first peak falls at 460nm, the second peak is about 550nm; add 3wt% cyan phosphor (Cyan Group P ), whose main peak range is between 500~600nm and has a relatively flat spectrum, so choose packages containing 10wt% green phosphor (Green P ) and 3wt% cyan phosphor (Cyan P ) Colloid, continue with the following test.

(3)紅色螢光粉 (3) Red phosphor

本試驗使用包含0.5wt%、0.8wt%以及1wt%之紅色螢光粉,與10wt%綠色螢光粉以及3wt%青色螢光粉的封裝膠體,製備的白光發光二極體結構的光譜;本實施例所使用的紅色螢光粉的峰值為波長660nm,平均粒徑大小為14nm,可為但不限於氮化物(Nitride)材料;請參見第五圖與第六圖,雖然添加0.5wt%、0.8wt%以及1wt%紅色螢光粉(RedP)的三組,其發光的波峰範圍都有擴大的趨勢,但以添加0.8wt%紅色螢光粉(RedP)組,其在可見光範圍,發光強度較一致,且具有連續且平坦的發光光譜,可見光的波段色域廣,為較佳的添加比例。 In this test, the encapsulation colloids containing 0.5wt%, 0.8wt% and 1wt% of red phosphor, 10wt% green phosphor and 3wt% cyan phosphor were used to prepare the spectrum of white light emitting diode structure; The red phosphor used in the examples has a peak wavelength of 660 nm and an average particle size of 14 nm, which can be, but is not limited to, a nitride (Nitride) material; please refer to the fifth and sixth figures, although adding 0.5 wt%, For the three groups of 0.8wt% and 1wt% red phosphor (Red P ), the peak range of their light emission tends to expand, but with the addition of 0.8wt% red phosphor (Red P ) group, which is in the visible light range, The luminous intensity is relatively consistent, and has a continuous and flat luminous spectrum, and the visible light has a wide color gamut, which is a better addition ratio.

本實施例製得的白光發光二極體結構,尺寸為5×5mm2,光輸出通量為104.3流明(lm),色溫為4200K,屬於暖白光;另,本實施例製得的白光發光二極體結構,顯色指數(CRI)之R9為73,且平均演色性指數(Ra)為90.9。 The white light emitting diode structure prepared in this embodiment has a size of 5×5mm 2 , a light output flux of 104.3 lumens (lm), and a color temperature of 4200K, which belongs to warm white light; in addition, the white light emitting diode prepared in this embodiment Polar body structure, R9 of color rendering index (CRI) is 73, and average color rendering index (Ra) is 90.9.

由上述之實施說明可知,本發明具有以下優點: It can be seen from the above implementation description that the present invention has the following advantages:

1.本發明之白光發光二極體結構,同時具有含有螢光粉的封裝膠體以及螢光玻璃,且封裝膠體與螢光玻璃中包含了不同種類的螢光粉,因此發出來的白光顯色能力佳,且具有寬廣的色域範圍。 1. The white light emitting diode structure of the present invention has both encapsulating colloid and fluorescent glass containing fluorescent powder, and the encapsulating colloid and fluorescent glass contain different kinds of fluorescent powder, so the white light emitted is colored Good ability, and has a wide color gamut range.

2.本發明之白光發光二極體結構,封裝膠體中同時加入綠色螢光粉、青色螢光粉以及紅色螢光粉,搭配藍光發光二極體晶片的光譜,於可見光波段範圍具有連續且平坦的光譜。 2. In the white light emitting diode structure of the present invention, green phosphor powder, cyan phosphor powder and red phosphor powder are added to the encapsulating colloid at the same time, and the spectrum of the blue light emitting diode chip is continuous and flat in the visible light band. Spectrum.

3.本發明之白光發光二極體結構所使用的螢光玻璃,係將玻璃粉與螢光粉混合後低溫燒結製成,能有效避免螢光粉沉澱的缺失,以達到較好的空間光色分布均勻性。 3. The fluorescent glass used in the white light-emitting diode structure of the present invention is made by mixing glass powder and fluorescent powder and sintering at low temperature, which can effectively avoid the lack of precipitation of fluorescent powder and achieve better space light Uniformity of color distribution.

綜上所述,本發明之白光發光二極體結構及其製造方法,的確能藉由上述所揭露之實施例,達到所預期之使用功效,且本發明亦未曾公開於申請前,誠已完全符合專利法之規定與要求。爰依法提出發明專利之申請,懇請惠予審查,並賜准專利,則實感德便 In summary, the white light emitting diode structure of the present invention and its manufacturing method can indeed achieve the expected use effect by the embodiments disclosed above, and the present invention has not been disclosed before the application. Comply with the provisions and requirements of the Patent Law. I filed an application for an invention patent in accordance with the law, pleaded for the review, and granted the patent.

惟,上述所揭之說明,僅為本發明之較佳實施例,非為限定本發明之保護範圍;大凡熟悉該項技藝之人士,其所依本發明之特徵範疇,所作之其它等效變化或修飾,皆應視為不脫離本發明之設計範疇。 However, the above disclosure is only a preferred embodiment of the present invention, and is not intended to limit the scope of protection of the present invention; those who are familiar with this skill, according to the characteristic scope of the present invention, make other equivalent changes Or modification should be regarded as not departing from the design scope of the present invention.

1:基座 1: pedestal

11:容置槽 11: accommodating slot

12:開口 12: opening

2:第一電極 2: the first electrode

3:第二電極 3: second electrode

4:發光二極體晶片 4: LED chip

41:銀膠 41: Silver plastic

5:封裝膠體 5: encapsulating colloid

51:綠色螢光粉 51: Green phosphor

52:青色螢光粉 52: Cyan phosphor

53:紅色螢光粉 53: Red phosphor

6:螢光玻璃 6: Fluorescent glass

7:導電金屬線 7: conductive metal wire

Claims (9)

一種白光發光二極體結構,包含:一基座,具有一容置槽以及一開口;一第一電極與一第二電極,係設置於該容置槽內;一發光二極體晶片,係設置於該容置槽內並電性連接該第一電極與該第二電極;一封裝膠體,係填充於該容置槽並包覆該藍光發光二極體晶片,其中該封裝膠體包含一10~30wt%之第一螢光粉材料與剩餘百分比之一矽膠材料;以及一螢光玻璃,係蓋設於該基座之該開口,其中該螢光玻璃係將一玻璃粉與一第二螢光粉材料經由一燒結步驟所製得。 A white light emitting diode structure includes: a base with a receiving groove and an opening; a first electrode and a second electrode are arranged in the receiving groove; a light emitting diode chip is a Disposed in the accommodating groove and electrically connecting the first electrode and the second electrode; an encapsulant is filled in the accommodating groove and covers the blue light-emitting diode chip, wherein the encapsulant includes a 10 ~30wt% of the first phosphor material and one percent of the remaining silicone material; and a fluorescent glass covering the opening of the base, wherein the fluorescent glass is a glass powder and a second fluorescent The powder material is prepared through a sintering step. 如申請專利範圍第1項所述之白光發光二極體結構,該第一螢光粉材料包含一綠色螢光粉,一青色螢光粉以及一紅色螢光粉。 According to the white light emitting diode structure described in item 1 of the patent application scope, the first phosphor material includes a green phosphor, a cyan phosphor, and a red phosphor. 如申請專利範圍第2項所述之白光發光二極體結構,其中該第一螢光粉材料包含10wt%綠色螢光粉,3wt%青色螢光粉以及0.8wt%紅色螢光粉。 The white light emitting diode structure as described in item 2 of the patent application scope, wherein the first phosphor material includes 10wt% green phosphor powder, 3wt% cyan phosphor powder and 0.8wt% red phosphor powder. 如申請專利範圍第2項所述之白光發光二極體結構,其中該綠色螢光粉之峰值波長為515nm,平均粒徑大小為12nm,該青色螢光粉之青色螢光粉的峰值波長為495nm,平均粒徑大小為20nm,以及該紅色螢光粉之的峰值為波長660nm,平均粒徑大小為14nm。 The white light emitting diode structure as described in item 2 of the patent application scope, wherein the peak wavelength of the green phosphor is 515 nm, the average particle size is 12 nm, and the peak wavelength of the cyan phosphor of the cyan phosphor is 495nm, the average particle size is 20nm, and the peak of the red phosphor is a wavelength of 660nm, and the average particle size is 14nm. 如申請專利範圍第1項所述之白光發光二極體結構,其中該螢光玻璃之該第二螢光粉材料為一釔鋁石榴石(YAG)螢光粉材料。 The white light emitting diode structure as described in item 1 of the patent application scope, wherein the second phosphor material of the fluorescent glass is a yttrium aluminum garnet (YAG) phosphor material. 如申請專利範圍第1項所述之白光發光二極體結構,其光輸出通量為100~150流明,相對色溫為4000~4500K,顯色指數(CRI)之R9大於70,且平均演色性指數(Ra)大於90。 The white light emitting diode structure as described in item 1 of the patent scope has a light output flux of 100 to 150 lumens, a relative color temperature of 4000 to 4500K, a color rendering index (CRI) R9 greater than 70, and an average color rendering The index (Ra) is greater than 90. 一種白光發光二極體結構的製造方法,係包含:步驟一:將一發光二極體晶片固定於一基座的一容置槽底部,並將該發光二極體晶片電性連接於一第一電極與一第二電極,其中該基座設有一開口;步驟二:將一封裝膠體填充到該基座的該容置槽內,並包覆該發光二極體晶片,其中該封裝膠體係包含一10~30wt%之第一螢光粉材料與剩餘百分比之一矽膠材料;以及步驟三:將一螢光玻璃蓋設於該基座之該開口,其中該螢光玻璃係將一玻璃粉與一第二螢光粉材料經由一燒結步驟所製得。 A method for manufacturing a white light-emitting diode structure includes: Step 1: fix a light-emitting diode chip to the bottom of a receiving groove of a base, and electrically connect the light-emitting diode chip to a first An electrode and a second electrode, wherein the base is provided with an opening; step 2: filling an encapsulant into the accommodating groove of the base and covering the light-emitting diode chip, wherein the encapsulant system Containing a 10~30wt% of the first phosphor material and a remaining percentage of silicone material; and Step 3: a fluorescent glass cover is placed on the opening of the base, wherein the fluorescent glass is a glass powder It is prepared with a second phosphor material through a sintering step. 如申請專利範圍第7項所述之白光發光二極體結構的製造方法,其中該封裝膠體之該第一螢光粉材料係包含一綠色螢光粉,一青色螢光粉以及一紅色螢光粉,且該螢光玻璃之該第二螢光粉材料為一釔鋁石榴石(YAG)螢光粉材料。 The method for manufacturing a white light emitting diode structure as described in item 7 of the patent application range, wherein the first phosphor material of the encapsulating colloid includes a green phosphor, a cyan phosphor and a red phosphor Powder, and the second phosphor material of the fluorescent glass is a yttrium aluminum garnet (YAG) phosphor material. 如申請專利範圍第8項所述之白光發光二極體結構的製造方法,該第一螢光粉材料係包含10wt%綠色螢光粉,3wt%青色螢光粉以及0.8wt%紅色螢光粉,且該綠色螢光粉之峰值波長為515nm,平均粒徑大小為12nm,該青色螢光粉之青色螢光粉的峰值波長為495nm,平均粒徑大小為20nm,以及該紅色螢光粉之的峰值為波長660nm,平均粒徑大小為14nm。 The method for manufacturing a white light emitting diode structure as described in item 8 of the patent application scope, the first phosphor material includes 10wt% green phosphor powder, 3wt% cyan phosphor powder and 0.8wt% red phosphor powder And the peak wavelength of the green phosphor is 515nm, the average particle size is 12nm, the peak wavelength of the cyan phosphor of the cyan phosphor is 495nm, the average particle size is 20nm, and the The peak value is 660nm and the average particle size is 14nm.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140312376A1 (en) * 2013-04-19 2014-10-23 Cree, Inc. Semiconductor Light Emitting Devices Including Red Phosphors that Exhibit Good Color Rendering Properties and Related Red Phosphors
TW201542491A (en) * 2015-08-03 2015-11-16 Tech System Co Ltd A Fluorescent glass component, fluorescent glass body containing the component and light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140312376A1 (en) * 2013-04-19 2014-10-23 Cree, Inc. Semiconductor Light Emitting Devices Including Red Phosphors that Exhibit Good Color Rendering Properties and Related Red Phosphors
TW201542491A (en) * 2015-08-03 2015-11-16 Tech System Co Ltd A Fluorescent glass component, fluorescent glass body containing the component and light emitting device

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