CN102956799A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- CN102956799A CN102956799A CN2011102480160A CN201110248016A CN102956799A CN 102956799 A CN102956799 A CN 102956799A CN 2011102480160 A CN2011102480160 A CN 2011102480160A CN 201110248016 A CN201110248016 A CN 201110248016A CN 102956799 A CN102956799 A CN 102956799A
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- CN
- China
- Prior art keywords
- light
- emitting device
- percentage
- red
- fluorescent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Luminescent Compositions (AREA)
Abstract
The invention relates to a light emitting device. The light emitting device comprises at least one blue chip, at least one red chip and a fluorescent layer covering the blue and red chips in glued manner. The fluorescent layer is formed by evenly mixing yellow phosphor and red phosphor through transparent adhesive. At least part of light is absorbed, light with wavelength different from or the same as that of the absorbed light is emitted, and accordingly luminance and color rendering of white light are increased.
Description
Technical field
The relevant a kind of light-emitting device of the present invention aims to provide a kind of illumination of white light and light-emitting device of color rendering of increasing.
Background technology
Recently advocate the trend of green energy resource, the advanced various countries such as the whole world are based on energy savings and environmental consciousness, all select white light emitting diode to replace gradually conventional illumination device, its advantage specifically long-pending little (but fit applications device miniaturization), power consumption is low, and (power consumption is 1/8th to 1/10th of general bulb, fluorescent lamp 1/2nd), life-span long (can reach more than 100,000 hours), caloric value low (thermal radiation is low) and reaction speed good (but high-frequency operation) etc., therefore can solve the problem that quite a lot of in the past incandescent lamp bulb is difficult to overcome, then claim the new light sources of white light emitting diode as the 21st century illumination, also because having power saving and environmental protection concept concurrently, be called " green illumination light source ".
Wherein with blue light-emitting diode (light emitting-diodes; LEDs) collocation yellow fluorescent powder generation white light is technology comparatively ripe in the present industry.Japan's day inferior chemistry (Nichia Chemical) development of company went out the yttrium-aluminium-garnet (Y with Yellow light-emitting low temperature series in 1996
3Al
5O
12: Ce, YAG:Ce) fluorescent material cooperation InGaN (InGaN) blue LED, can be used as high efficiency white light source.But because in white light quality process, the part blue light must participate in colour mixture to obtain white light, and the higher problem of colour temperature (Color temperature) is therefore arranged, particularly when high current practice, the problem that colour temperature raises will be more serious.
In addition, YAG fluorescent material is under hot environment, and its luminous efficiency can increase with temperature and reduce, and its white-light spectrum contains red composition hardly, therefore its color rendering (Color Rendering Index) approximately only has 50-60, has the puzzlement of color rendering deficiency during with light source as general lighting.
Summary of the invention
Technical problem solved by the invention is namely providing a kind of illumination of white light and light-emitting device of color rendering of increasing.
Technical scheme of the present invention is: a kind of light-emitting device, it is characterized in that, and include: at least more than one blue light wafer; At least more than one red wafer; Fluorescence coating, add that by yellow fluorescent powder material and red fluorescence powder material the transparent adhesive tape material evenly mixes, glue-bondable the covering of this fluorescence coating is connected on blue light wafer and the red wafer, this transparent adhesive tape material is 100 percentage by weights, and this yellow fluorescent powder material is 0.1～60 percentage by weight, and this red fluorescence powder material is 0.1～50 percentage by weight.
Wherein, this yellow fluorescent powder material is gold-plating aluminium garnet (lutetium aluminum garnet, LuAG) fluorescent material material.
This LuAG fluorescent material material is selected from Lu
3Al
5O
12: Ce
3+
This yellow fluorescent powder material is silicate (Silicate) fluorescent material material.
This Silicate fluorescent material material is selected from (Sr, Ca) 2SiO
4: Eu
2+, Ba
2SiO
4: Eu
2+, SrGa
2S
4, ZnS:Cu
+, ZnS:Au
+, ZnS:Al
3+, (Zn, Cd) S:Ag
+Or CaS:Ce
3+Or above-mentioned combination.
This red fluorescence powder material is nitride (Nitride) fluorescent material material.
This Nitride phosphor material is selected from (Ba, Ca, Sr, Eu)
2Si
5N
8-2xO
xC
xOr AE
2Si
5N
8: RE, wherein AE is alkaline earth element (alkaline earth element), RE is rare earth element (rare earth element).
This Nitride phosphor material is Ba
2Si
5N
8: Eu
2+, Ca
2Si
5N
8: Eu
2+Or Sr
2Si
5N
8: Eu
2+
The content of this gold-plating aluminium garnet fluorescent material material is 10 percentage by weights, and the content of this Nitride phosphor material is 0.5 percentage by weight.
The content of this silicate fluorescent powder material is 18 percentage by weights, and the content of this Nitride phosphor material is 0.5 percentage by weight.
Beneficial effect of the present invention is: light-emitting device of the present invention includes at least: at least more than one blue light wafer, at least more than one red wafer and gummed cover the fluorescence coating that is connected on blue light wafer and the red wafer, this fluorescence coating adds that by yellow fluorescent powder material and red fluorescence powder material the transparent adhesive tape material evenly mixes, by at least one part that absorbs light source, and send the light source long with light absorbing wavelength phase XOR same wave, and increase with illumination and the color rendering that reaches white light.
Description of drawings
Fig. 1 is the schematic flow sheet of reflecting wall forming method among the present invention.
The figure number explanation:
Light-emitting device 10
Blue light wafer 11
Red wafer 12
Embodiment
The present invention aims to provide a kind of light-emitting device 10, as shown in Figure 1, at least include: at least more than one blue light wafer 11, at least more than one red wafer 12 and fluorescence coating 13, this blue light wafer 11 is 420～465nm as its wavelength of light source of blue light emitting, red wafer 12 is 590～650nm as its wavelength of light source of red light-emitting, and this fluorescence coating 13 gummeds cover and are connected on blue light wafer 11 and the red wafer 12, and this fluorescence coating 13 adds that by yellow fluorescent powder material and red fluorescence powder material the transparent adhesive tape material evenly mixes.
Wherein, this transparent adhesive tape material is 100 percentage by weights, and this yellow fluorescent powder material is 0.1～60 percentage by weight, this red fluorescence powder material is 0.1～50 percentage by weight, this yellow fluorescent powder material can be gold-plating aluminium garnet (lutetium aluminum garnet, LuAG) fluorescent material material for example can be selected from Lu
3Al
5O
12: Ce
3+, this yellow fluorescent powder material can for example can be selected from (Sr, Ca) 2SiO for silicate (Silicate) fluorescent material material
4: Eu
2+, Ba
2SiO
4: Eu
2+, SrGa
2S
4, ZnS:Cu
+, ZnS:Au
+, ZnS:Al3
+, (Zn, Cd) S:Ag
+Or CaS:Ce
3+Or above-mentioned combination, and this red fluorescence powder material can for example can be selected from for nitride (Nitride) fluorescent material material (Ba, Ca, Sr, Eu)
2Si
5N
8-2xO
xC
xOr AE
2Si
5N
8: RE, wherein AE is alkaline earth element (alkaline earth element), RE is rare earth element (rare earth element), for example Ba
2Si
5N
8: Eu
2+, Ca
2Si
5N
8: Eu
2+Or Sr
2Si
5N
8: Eu
2+, absorb at least one part of light source by this fluorescence coating 13, and send the light source long with light absorbing wavelength phase XOR same wave, and increase with illumination and the color rendering that reaches white light.
Shown in following table one, be the comparison sheet of measured illumination, colour temperature and color rendering of general light-emitting device and light-emitting device of the present invention.
Number as seen from the above table 1 and number 3 and use the blue light wafers to cooperate yellow fluorescent powders (being respectively gold-plating aluminium garnet fluorescent material material or silicate fluorescent powder material), though the white light source illumination that it inspires is higher, but colour temperature is also higher and color rendering is lower, the color that causes illuminated object to present is unnatural, affect the visually-perceptible of human eye, also can't be suitable demonstrate the realistic colour that illuminated object should represent; And number 2 and number the 4 same blue light wafers that use and cooperate yellow fluorescent powder (being respectively gold-plating aluminium garnet fluorescent material material or silicate fluorescent powder material) and red fluorescence powders (Nitride phosphor material), although improved color rendering, but illumination greatly descends, and colour temperature is still high.
Cooperate yellow fluorescent powder (be respectively gold-plating aluminium garnet fluorescent material material or silicate light powder material) and red fluorescence powder (Nitride phosphor material) for the employed blue light wafer of light-emitting device of the present invention and red wafer and number 5 to numbering 14, its illumination all can be kept more than the 70Im/W, the best is 94Im/W, colour temperature on average falls within below the 3000K, and color rendering also can be maintained at more than 70, the best is 91, wherein again to number 6 and number 12 as preferred embodiment, the content of gold-plating aluminium garnet fluorescent material material is take 10 percentage by weights as good among the embodiment of this numbering 6, and the content of this Nitride phosphor material is take 0.5 percentage by weight as good, and the content of the embodiment mesosilicic acid salt fluorescent material material of this numbering 12 is take 18 percentage by weights as good, and the content of this Nitride phosphor material is take 0.5 percentage by weight as good.
Claims (10)
1. a light-emitting device is characterized in that, includes:
At least more than one blue light wafer;
At least more than one red wafer;
Fluorescence coating, add that by yellow fluorescent powder material and red fluorescence powder material the transparent adhesive tape material evenly mixes, glue-bondable the covering of this fluorescence coating is connected on blue light wafer and the red wafer, this transparent adhesive tape material is 100 percentage by weights, and this yellow fluorescent powder material is 0.1 ~ 60 percentage by weight, and this red fluorescence powder material is 0.1 ~ 50 percentage by weight.
2. light-emitting device as claimed in claim 1 is characterized in that, this yellow fluorescent powder material is gold-plating aluminium garnet fluorescent material material.
3. light-emitting device as claimed in claim 2 is characterized in that, this LuAG fluorescent material material is selected from Lu
3Al
5O
12: Ce
3+
4. light-emitting device as claimed in claim 1 is characterized in that, this yellow fluorescent powder material is silicate (Silicate) fluorescent material material.
5. light-emitting device as claimed in claim 4 is characterized in that, this Silicate fluorescent material material is selected from (Sr, Ca) 2SiO
4: Eu
2+, Ba
2SiO
4: Eu
2+, SrGa
2S
4, ZnS:Cu
+, ZnS:Au
+, ZnS:Al
3+, (Zn, Cd) S:Ag
+Or CaS:Ce
3+Or above-mentioned combination.
6. such as each described light-emitting device of claim 1 to 5, it is characterized in that, this red fluorescence powder material is the Nitride phosphor material.
7. light-emitting device as claimed in claim 6 is characterized in that, this Nitride phosphor material is selected from (Ba, Ca, Sr, Eu)
2Si
5N
8-2xO
xC
xOr AE
2Si
5N
8: RE, wherein AE is alkaline earth element, RE is rare earth element.
8. light-emitting device as claimed in claim 7 is characterized in that, this Nitride phosphor material is Ba
2Si
5N
8: Eu
2+, Ca
2Si
5N
8: Eu
2+Or Sr
2Si
5N
8: Eu
2+
9. light-emitting device as claimed in claim 6 is characterized in that, the content of this gold-plating aluminium garnet fluorescent material material is 10 percentage by weights, and the content of this Nitride phosphor material is 0.5 percentage by weight.
10. light-emitting device as claimed in claim 6 is characterized in that, the content of this silicate fluorescent powder material is 18 percentage by weights, and the content of this Nitride phosphor material is 0.5 percentage by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102480160A CN102956799A (en) | 2011-08-26 | 2011-08-26 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102480160A CN102956799A (en) | 2011-08-26 | 2011-08-26 | Light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102956799A true CN102956799A (en) | 2013-03-06 |
Family
ID=47765318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102480160A Pending CN102956799A (en) | 2011-08-26 | 2011-08-26 | Light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102956799A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017082557A1 (en) * | 2015-11-10 | 2017-05-18 | 엘지전자 주식회사 | Yellow light-emitting phosphor and light-emitting device using same |
| CN113437196A (en) * | 2021-06-24 | 2021-09-24 | 深圳市华皓伟业光电有限公司 | SMD packaging and forming method with large divergence angle |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080231171A1 (en) * | 2004-05-27 | 2008-09-25 | Koninklijke Philips Electronics, N.V. | Illumination System Comprising a Radiation Source and Fluorescent Material |
| CN101432897A (en) * | 2006-04-25 | 2009-05-13 | 皇家飞利浦电子股份有限公司 | Fluorescent lighting creating white light |
| US20100264432A1 (en) * | 2009-04-15 | 2010-10-21 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting device with high color rendering index and high luminescence efficiency |
-
2011
- 2011-08-26 CN CN2011102480160A patent/CN102956799A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080231171A1 (en) * | 2004-05-27 | 2008-09-25 | Koninklijke Philips Electronics, N.V. | Illumination System Comprising a Radiation Source and Fluorescent Material |
| CN101432897A (en) * | 2006-04-25 | 2009-05-13 | 皇家飞利浦电子股份有限公司 | Fluorescent lighting creating white light |
| US20100264432A1 (en) * | 2009-04-15 | 2010-10-21 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting device with high color rendering index and high luminescence efficiency |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017082557A1 (en) * | 2015-11-10 | 2017-05-18 | 엘지전자 주식회사 | Yellow light-emitting phosphor and light-emitting device using same |
| CN113437196A (en) * | 2021-06-24 | 2021-09-24 | 深圳市华皓伟业光电有限公司 | SMD packaging and forming method with large divergence angle |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130306 |