CN114623418A - Light emitting device with high red light brightness and high reliability - Google Patents
Light emitting device with high red light brightness and high reliability Download PDFInfo
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- CN114623418A CN114623418A CN202210269680.1A CN202210269680A CN114623418A CN 114623418 A CN114623418 A CN 114623418A CN 202210269680 A CN202210269680 A CN 202210269680A CN 114623418 A CN114623418 A CN 114623418A
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Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/71—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks using a combination of separate elements interconnected by heat-conducting means, e.g. with heat pipes or thermally conductive bars between separate heat-sink elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
- F21V7/24—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
- F21V7/28—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a light-emitting device, which comprises a heat-conducting substrate, a reflecting layer and a light-emitting layer which are sequentially stacked from bottom to top, and is characterized in that: the reflecting layer is a gold reflecting layer, and the luminescent layer comprises Y3Al5O12:Ce3+Fluorescent powder, (Y, Gd)3Al5O12:Ce3+Phosphor, alpha-SiAlON: Eu2+Phosphor and (Sr, Ca) AlSiN3:Eu2+Any one or more of the phosphors, Y3Al5O12:Ce3+Ce in phosphor3+Has a doping concentration of 1.2 mol% or more, wherein (Y, Gd)3Al5O12:Ce3+Ce in phosphor3+Has a doping concentration of 0.5 mol% or more and Gd3+The doping concentration of (A) is 10 mol% or more.
Description
The present application is a divisional application entitled "a light emitting device with high red luminance and high reliability" filed by the applicant at 2018, 12, month and 26, under application number 201811596755.7.
Technical Field
The present invention relates to a light emitting device having high red luminance and high reliability.
Background
At present, the conventional technology in the field of laser light sources emits light of corresponding colors by irradiating fluorescent powder with laser. It is known that when a laser light source is applied to white light illumination, the color rendering index of the illumination can be improved by increasing the red light proportion of the laser light source; when the laser light source is applied to plant illumination, the improvement of the red light proportion of the laser light source can be beneficial to photosynthesis and photoperiod effect, because the red light is not only beneficial to the synthesis of plant carbohydrate, but also can accelerate the growth of plants in long days; and in laser display application, the color reduction can be better realized by improving the red light proportion of a laser light source, and the problems of partial purple and partial yellow of the red color of a picture are solved. One of the methods for increasing the red light ratio in the prior art is to add a red light source, such as a red LED or a red laser, but the method has significant problems, such as the increase of the system volume and the limitation of the output power of the red laser caused by the temperature, so the method for adding the red light source has limitations. Another method for increasing the red light ratio in the prior art is to use red phosphor, but the red phosphor itself absorbs a large amount of short-wavelength light when being irradiated by laser, so that the generated heat is larger, and the temperature effect is more obvious. However, aluminum has a low reflectance and generates a high amount of heat, and thus the heat dissipation effect is not good enough. On the other hand, although the reflectance of the silver reflective layer is relatively high, it is easily oxidized and vulcanized, and thus the reliability is low. In addition, there is a method of generating red light using a long wavelength yellow light combined filter using Ce: YAG having good thermal stability and good light saturation3+The heat effect of the yellow light source is smaller than that of the red light source, so that the red light generated by the method has better brightness and efficiency, but the cost is improved and the structure is not compact due to the adoption of the optical filter. Therefore, the laser fluorescent light source for generating red light in the prior art is high in cost and not compact in structure, or the red light efficiency and the brightness are low, so that the improvement of the brightness and the color gamut of a laser display product is restricted.
Therefore, it is desirable to provide a light emitting device having high luminance of red light and high reliability, so that the luminance and color gamut of laser display of a laser display product thereof can be significantly improved.
Disclosure of Invention
In view of the above, the present invention is directed to a light emitting device with high red light emitting efficiency, compact structure, low cost and excellent heat dissipation performance.
According to an aspect of the present invention, a light emitting device is provided, which includes a heat conducting substrate, a reflective layer and a light emitting layer, which are sequentially stacked from bottom to top, wherein the reflective layer is a gold reflective layer, and the light emitting layer includes Y3Al5O12:Ce3+Fluorescent powder, (Y, Gd)3Al5O12:Ce3+Phosphor, alpha-SiAlON: Eu2+Phosphor and (Sr, Ca) AlSiN3:Eu2+Any one or more of the phosphors, Y3Al5O12:Ce3+Ce in phosphor3+Has a doping concentration of 1.2 mol% or more, the (Y, Gd)3Al5O12:Ce3+Ce in phosphor3+Has a doping concentration of 0.5 mol% or more and Gd3+The doping concentration of (A) is 10 mol% or more.
Further, the light emitting device further includes a transition layer disposed between the light emitting layer and the reflective layer, and the transition layer is made of nickel or a nickel-chromium alloy.
Further, the thickness of the transition layer is less than 2 nm.
Further, the light emitting device further includes a soldering layer disposed between the reflective layer and the heat conductive substrate, the soldering layer being configured to securely join the reflective layer and the heat conductive substrate.
Further, the welding layer is an alloy welding flux layer selected from gold tin, silver tin and bismuth tin.
Further, the heat conducting substrate is selected from a copper substrate, a copper substrate with a nickel-gold plated surface, or a silicon carbide and aluminum nitride substrate with a nickel-gold plated surface.
Further, the thickness of the gold reflecting layer is 80-200 nm.
Further, the light-emitting layer is fluorescent ceramic or fluorescent glass.
Further, the fluorescent ceramic is any one of the following ceramics: y is3Al5O12:Ce3+Phosphor or (Y, Gd)3Al5O12:Ce3+Pure phase ceramics of phosphor; al (aluminum)2O3、Y2O3、Mg2AlO4Are each independently of Y3Al5O12:Ce3+Phosphor or (Y, Gd)3Al5O12:Ce3+Complex phase ceramic formed by fluorescent powder; eu, alpha-SiAlON2+Phosphor or (Sr, Ca) AlSiN3:Eu2+Pure phase ceramics of phosphor; and alpha-SiAlON Eu2+Phosphor or (Sr, Ca) AlSiN3:Eu2+The fluorescent powder and the fluoride form the complex phase ceramic.
Furthermore, the light emitting device further comprises at least one second light emitting layer and at least one second reflecting layer, the second light emitting layer and the light emitting layer are arranged in a coplanar manner, the second reflecting layer and the reflecting layer are arranged in a coplanar manner, and the second reflecting layer is arranged below the second light emitting layer and used for reflecting light emitted by the second light emitting layer.
Further, the second light emitting layer includes at least one of scattering particles, yellow phosphor, and green phosphor.
Further, the second reflective layer is a silver reflective layer or an inorganic diffuse reflective layer.
Further, a protective layer made of gold, platinum, or an alloy thereof is disposed under the second reflective layer to protect the second reflective layer from vulcanization and oxidation.
Advantageous effects
The invention provides a light-emitting device which comprises a heat conduction substrate, a reflecting layer and a light-emitting layer which are sequentially stacked from bottom to top, wherein the reflecting layer is a gold reflecting layer, and the light-emitting layer comprises Y3Al5O12:Ce3+Fluorescent powder, (Y, Gd)3Al5O12:Ce3+Phosphor, alpha-SiAlON: Eu2+Phosphor and (Sr, Ca) AlSiN3:Eu2+Any one or more of the phosphors, Y3Al5O12:Ce3+Ce in phosphor3+Has a doping concentration of 1.2 mol% or more, the (Y, Gd)3Al5O12:Ce3+Ce in phosphor3+Has a doping concentration of 0.5 mol% or more and Gd3+The doping concentration of (A) is 10 mol% or more. Since gold is not easily oxidized and sulfurized like silver, the reliability of the light emitting device using gold as a reflective layer in the present invention is higher, compared to the prior art using silver as a reflective layer. In addition, the gold reflective layer of the present invention has a reflectance of 80% or more only for light having a wavelength of 555nm or more and a reflectance of 95% or more for light having a wavelength of 650nm or more, that is, the gold reflective layer 12 has a certain absorption for light having a wavelength of 650nm or less, and particularly, the absorption for light having a wavelength of 555nm or less is serious. That is, the gold reflective layer of the present invention has a function of selectively reflecting red light and absorbing green, blue and violet light, and can reflect only red light without using a color filter, thereby simplifying the structure and saving the cost. In addition, the fluorescent powder with specific doping concentration in the light emitting layer of the light emitting device enables the wavelength of the excited light to be close to the wavelength of red light, so that the red light occupation ratio is improved, and the heat effect caused by the fact that the gold reflecting layer absorbs green light and the like is reduced. Therefore, the light emitting device of the present invention has high red luminance and high reliability, and can realize higher luminance and higher reliability while reducing the costCompact optical structures.
Drawings
The drawings represent non-limiting exemplary embodiments described herein. It will be appreciated by those skilled in the art that the drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention.
In the drawings:
fig. 1 is a schematic view of a light emitting device according to the present invention.
Fig. 2 is a graph showing the reflectance of several metallic materials at different wavelength ranges of light.
Fig. 3 is a schematic structural view of a light-emitting device according to embodiment 1 of the present invention.
Fig. 4 is a schematic view and a schematic cross-sectional view of a rotating color wheel according to embodiment 2 of the present invention.
List of reference numerals:
10,45: excitation light
11,41: luminescent layer
14,44,55: heat-conducting substrate
15,46: stimulated luminescence
12,42: reflective layer
13,43,54: solder layer
51 a: red light emitting layer
51 b: green light emitting layer
51 c: blue light emitting layer
51 d: yellow light emitting layer
52 a: red light reflecting layer
52 b: green light reflecting layer
52 c: blue light reflecting layer
52 d: yellow light reflecting layer
53b,53c,53 d: protective layer
Detailed Description
One or more exemplary embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which one or more exemplary embodiments of the invention can be readily ascertained by one of ordinary skill in the pertinent art. As those skilled in the art will recognize, the exemplary embodiments may be modified in various different ways without departing from the spirit or scope of the present invention, which is not limited to the exemplary embodiments described herein.
The present invention will now be described in detail with reference to the accompanying drawings.
As shown in fig. 1, the present invention provides a light emitting device including a heat conductive substrate 14, a reflective layer 12, and a light emitting layer 11, which are sequentially stacked from bottom to top. The heat conductive substrate 14 has high thermal conductivity, and is preferably a copper substrate or a copper substrate with a nickel-gold plated surface, and may be a nickel-gold plated silicon carbide (SiC) or aluminum nitride (AlN) substrate.
The light-emitting layer 11 may be Y having an emission peak wavelength of more than 555nm3Al5O12:Ce3+Phosphor or (Y, Gd)3Al5O12:Ce3+Pure phase ceramics of phosphors, or Al2O3、Y2O3、Mg2AlO4Respectively connected with Y with the wavelength of the luminous peak value larger than 555nm3Al5O12:Ce3+Phosphor or (Y, Gd)3Al5O12:Ce3+The complex phase ceramic formed by the fluorescent powder can also be alpha-SiAlON: Eu2+Pure phase ceramic of fluorescent powder or (Sr, Ca) AlSiN3:Eu2+The pure phase ceramic of the fluorescent powder or the complex phase ceramic formed by the fluorescent powder and fluoride such as calcium fluoride, magnesium fluoride and the like, and also can be fluorescent glass formed by mixing and sintering the fluorescent powder and glass powder. Further, Y3Al5O12:Ce3+Middle Ce3+Has a doping concentration of 1.2 mol% or more, (Y, Gd)3Al5O12:Ce3+Middle Ce3+Has a doping concentration of 0.5 mol% or more and Gd3+The doping concentration of (2) is 10 mol% or more. Ce3+At Y3Al5O12The higher the doping concentration in (A), Y3Al5O12The longer the luminescence wavelength of Ce is3+When the doping concentration of (2) is 1.2 mol%, Y3Al5O12Has a luminescence peak wavelength of 555nm and Gd3+In (Y, Gd)3Al5O12Doping concentration ofThe higher the degree, (Y, Gd)3Al5O12The longer the luminescence wavelength of (C), Ce3+Has a doping concentration of 0.5 mol% and Gd3+When the doping concentration of (D) is 10 mol%, (Y, Gd)3Al5O12The peak wavelength of light emission of (2) was 555 nm. The luminescent layer 11 can generate yellow or red fluorescence after being excited by the blue laser (excitation light) 10 of the excitation light source, and the thickness of the luminescent layer 11 is preferably greater than 0.15mm, so as to ensure that the absorptivity of the luminescent layer 11 of the invention made of the above fluorescent powder to the blue laser 10 from the laser light source can reach more than 95%.
The reflective layer 12 is used to reflect yellow or red fluorescence generated in the light-emitting layer 11. The reflective layer 12 is a gold (Au) reflective layer, and has a thickness of 80-200nm, and is too thin to sufficiently reflect red fluorescence, resulting in a decrease in red light reflectance, and too thick generates stress, resulting in a decrease in adhesion between the reflective layer and the light emitting layer, which also results in a decrease in reflectance. The gold reflective layer 12 has a reflectance of 80% or more for only light having a wavelength of 555nm or more and a reflectance of 95% or more for light having a wavelength of 650nm or more, that is, the gold reflective layer 12 has a certain absorption for light having a wavelength of 650nm or less, and particularly, the absorption for light having a wavelength of 555nm or less is serious. That is, the gold reflective layer 12 absorbs green, blue and violet light more seriously. When the excited light generated in the light emitting layer 11 is red light, the gold reflective layer 12 can reflect most of the red light, has a high reflectance to the red light, generates less heat, and has higher reliability because gold is not easily oxidized and sulfurized like silver as compared with the prior art in which silver is used as a reflective layer. When the excited light generated in the light emitting layer 11 is yellow light, since the yellow light generated by the light emitting layer 11 is a broad-spectrum light, rather than a monochromatic light of a single wavelength, and can be regarded as a mixed light of green light and red light, and since the gold reflective layer 12 has strong absorption to the green light portion and strong reflection to the red light portion, the gold reflective layer 12 of the present invention can function as both a reflective layer that reflects the red light portion and a filter that absorbs the green light portion so as to reflect only the red light portion. In addition, in order to improve the red light proportion and reduce the heat effect caused by absorbing a large amount of green light by the gold reflecting layer 12, the light emitting layer 11 of the invention contains yellow fluorescent powder with specific doping concentration, so that the wavelength of the excited light is close to the wavelength of the red light, the components of the green light are reduced, the proportion of the red light part is improved, the heat generated by absorbing the green light by the gold reflecting layer 12 is reduced, the emergence of the red light part is enhanced, the heat effect of the fluorescent powder is reduced, the red light with higher purity can be obtained, a light filter is not needed, the volume and the cost of the system are reduced, and a more compact optical structure is realized. That is, in the present invention, a light emitting device with low thermal effect, high red light ratio, and compact structure can be realized by constituting the light emitting layer 11 of the present invention by using yellow phosphor having a certain doping concentration and by using a gold reflective layer as the reflective layer 12 of the present invention.
In addition, as shown in fig. 1, a soldering layer 13 may be further included in the light emitting device of the present invention, wherein the soldering layer 13 is disposed between the heat conductive substrate 14 and the reflective layer 12. The soldering layer 13 is used to firmly solder the reflective layer 12 to the heat conductive substrate 14 to increase the adhesion between the reflective layer 12 and the heat conductive substrate 14 so that the two are firmly bonded. The solder layer 13 may be an alloy solder layer of gold tin, silver tin, bismuth tin, or the like.
In addition, a transition layer may be disposed between the light emitting layer 11 and the reflective layer 12 to increase adhesion between the light emitting layer 11 and the reflective layer 12. The transition layer can be a nickel layer or a nickel-chromium alloy layer, and the thickness of the transition layer is less than 2 nm. When the thickness of the transition layer is 2nm or less, the excited light generated in the light-emitting layer 11 can penetrate the transition layer and reach the gold reflective layer 12, so as to be reflected by the gold reflective layer 12. In order to prevent the stimulated luminescence generated in the light-emitting layer 11 from further penetrating the gold reflective layer 12, the thickness of the gold reflective layer 12 is set to 80 to 200nm to ensure sufficient reflection of the stimulated luminescence generated in the light-emitting layer 11.
The invention selects Y which can be excited by blue light and has a luminescence peak wavelength of more than 555nm3Al5O12:Ce3+Fluorescent powder, (Y, Gd)3Al5O12:Ce3+Phosphor, alpha-SiAlON: Eu2+Phosphor and (Sr, Ca) AlSiN3:Eu2+One or more kinds of phosphors are used as a wavelength conversion material of the light emitting layer 11, and metallic gold (Au) is used as a material of the reflective layer 12, and the phosphors and the gold constitute the light emitting layer 11 and the reflective layer 12 of the light emitting device of the present invention, respectively, and then are bonded to the heat conductive substrate 14, thereby constituting the light emitting device of the present invention. The gold has a higher reflectance to the excited red light generated in the light emitting layer 11 than aluminum, has better chemical stability and thermal stability than silver, and can be directly soldered to a copper heat sink having high thermal conductivity, and more importantly, has a reflectance to the fluorescence having a light emitting wavelength of more than 555nm of more than 80%.
On the other hand, referring to the reflectance curve of fig. 2, it can be seen from the reflectance curve of gold without a plating layer on the surface that the gold layer functions as a filter to absorb light having a wavelength shorter than 555 nm. That is, the gold layer reflects light having a wavelength greater than 555nm back and absorbs light having a wavelength shorter than 555 nm. The luminescent layer 11 made of the phosphor with the specific doping concentration as described above in the present invention can red-shift the stimulated luminescence light generated in the luminescent layer 11, so that the green light content in the stimulated luminescence light is reduced, and then the green light absorbed by the gold reflective layer 12 is reduced, thereby the heat generated is also reduced, and the thermal effect of the phosphor is reduced. Therefore, the fluorescent material and the gold reflecting layer are matched, so that high-brightness red light can be realized without a filter, the cost is reduced, and a more compact optical structure can be realized.
In the above description, it is described that the light emitting device of the present invention has only the red light emitting structure capable of emitting red light, but the present invention is not limited thereto, and the light emitting device of the present invention may include at least one light emitting structure of another color and may be capable of emitting light of at least one color other than the above-described structure. For example, the light emitting device of the present invention may further include a second light emitting layer disposed coplanar with the light emitting layer 11, and a second reflective layer disposed coplanar with the reflective layer 12 and below the second light emitting layer, the second reflective layer being for reflecting light emitted from the second light emitting layer. The second light emitting layer may be a scattering layer containing only scattering particles, and in this case, when the blue laser light 10 is irradiated on the second light emitting layer, diffuse reflection occurs, thereby emitting blue light. Alternatively, the second light emitting layer may include yellow phosphor or green phosphor, and when the blue laser 10 is irradiated on the second light emitting layer, the second light emitting layer absorbs the excitation light and emits yellow light or green light. Of course, the second light emitting layer may also include any two or three of the scattering particles, the yellow phosphor, and the green phosphor at the same time, and in this case, it is preferable to dispose the scattering particles, the yellow phosphor, and the green phosphor in different regions. That is, the second light emitting layer is formed with three regions respectively rich in scattering particles, yellow phosphor and green phosphor, and when the blue laser light 10 is irradiated on the three regions, blue, yellow and green light are emitted, respectively.
The following description refers to specific embodiments of the present invention.
Example 1 (light emitting device having fixed Red light emitting Module)
A schematic diagram of the structure of a light emitting device having a fixed red light emitting module according to embodiment 1 of the present invention is shown in fig. 3, and the fixed red light emitting module of the light emitting device is composed of a light emitting layer 41, a reflective layer 42, a solder layer 43, and a heat conductive substrate 44. The solder layer 43 is disposed on the heat conductive substrate 44. The reflective layer 42 is disposed on the solder layer 43. The light emitting layer 41 is disposed on the reflective layer 42. In the present embodiment, the light-emitting layer 41 is specifically constituted by a luminescent ceramic as a light-emitting part, wherein the luminescent ceramic is preferably Ce3+Doping concentration of 1.2 mol% of Y3Al5O12Pure phase ceramics or Al2O3-Y3Al5O12Complex phase ceramics, or Ce3+A doping concentration of more than 0.5 mol% and Gd3+The doping concentration is more than 10mol% of (Y, Gd)3Al5O12Pure phase ceramics or Al2O3-(Y,Gd)3Al5O12The heterogeneous ceramic or luminescent ceramic is alpha-SiAlON: Eu2+Ceramic or (Sr, Ca) AlSiN3:Eu2+A ceramic. The luminescent ceramic emits fluorescence having a dominant wavelength of more than 555nm after being excited by blue laser (excitation light) 45 of a laser light source. The reflective layer 42 of the light-emitting device is mainly used for reflecting red light (excited light) 46 generated in the light-emitting layer 41 made of the above-described luminescent ceramic, and the reflective layer 42 is made of reflective metal gold (Au).
As described above, the reflective layer 42 made of gold has the following advantages compared to the silver reflective layer: on the one hand, since gold is an inert metal, thermal stability and chemical stability are stronger, so that the reliability of use of the reflective layer 42 made of gold is increased; on the other hand, the reflectance of gold to light with a wavelength of more than 555nm exceeds 80%, while the reflectance to light with a wavelength of less than 500nm is only about 50%, and this selective reflection characteristic makes the relative intensity of light with a wavelength of more than 555nm among reflected light higher, that is, the luminance of red light in the light emitting device is higher. The solder layer 43 is mainly used to solder the light-emitting layer 41 and the reflective layer 42 to the heat conductive substrate 44, so that heat transfer of the light-emitting device is facilitated, and the solder of the solder layer 43 is preferably gold tin, silver tin, or bismuth tin alloy. The heat conducting substrate 44 is mainly used for transferring heat in the light emitting module, and is preferably a copper substrate or a copper substrate with a surface plated with nickel and gold, or a silicon carbide or aluminum nitride substrate plated with nickel and gold.
The light-emitting device according to embodiment 1 of the present invention is a light-emitting device having high red light emission efficiency, a compact structure, and excellent heat dissipation performance.
Embodiment 2 of the invention (rotating fluorescent color wheel)
In embodiment 2 according to the present invention, a rotating fluorescent color wheel is provided, and a schematic structural diagram thereof is shown in fig. 4, the rotating fluorescent color wheel includes a ring-shaped heat conducting substrate 55, a soldering layer 54, a reflecting layer (including a red light reflecting layer 52a, a green light reflecting layer 52b, a blue light reflecting layer 52c and a yellow light reflecting layer 52d which are disposed in a coplanar manner), and a light emitting layer (including a red light emitting layer 51a, a green light emitting layer 51b, a blue light emitting layer 51c and a yellow light emitting layer 51d which are disposed in a coplanar manner). The solder layer 54 is disposed on the heat conductive substrate 55. A red light reflection layer 52a, a green light reflection layer 52b, a blue light reflection layer 52c, and a yellow light reflection layer 52d are respectively provided on different portions of the soldering layer 54. The red light emitting layer 51a is disposed on the red light reflecting layer 52 a. The green light emitting layer 51b, the blue light emitting layer 51c, and the yellow light emitting layer 51d are disposed on the green light reflecting layer 52b, the blue light reflecting layer 52c, and the yellow light reflecting layer 52d, respectively. The red light emitting layer 51a and the red light reflecting layer 52a constitute a red light emitting module; the green light emitting layer 51b and the green light reflecting layer 52b constitute a green light emitting module; the blue light emitting layer 51c and the blue light reflecting layer 52c constitute a blue light emitting module; the yellow light emitting layer 51d and the yellow light reflecting layer 52d constitute a yellow light emitting module.
In this embodiment, the light emitting portion of the rotating fluorescent color wheel is composed of four light emitting modules, namely a red light emitting module, a green light emitting module, a blue light emitting module and a yellow light emitting module. The four light emitting modules are individually fabricated and then bonded to a heat conducting substrate 55 through a solder layer 54 to form the fluorescent color wheel, and the heat conducting substrate 55 may be aluminum. The light emitting modules are made of fluorescent materials which can be excited by exciting light to generate fluorescence with corresponding colors, for example, red fluorescent powder, green fluorescent powder, blue fluorescent powder and yellow fluorescent powder which are packaged by glass or fluorescent ceramics which are formed by sintering the fluorescent powders can be selected. Specifically, when the excitation light is all blue light (e.g., blue laser light), the blue light emitting layer 51c may be mainly composed of scattering particles, and the blue light is irradiated on the blue light emitting layer 51c and then reflected by the scattering particles and the blue light reflecting layer 52 c. In this case, the green phosphor and the yellow phosphor are commonly used phosphors, and the red phosphor is preferably Ce3+Doping concentration of 1.2 mol% of Y3Al5O12Or Ce3+A doping concentration of more than 0.5 mol% and Gd3+(Y, Gd) ion-doped to a concentration of greater than 10 mol%3Al5O12Or alpha-SiAlON: Eu2+Or (Sr, Ca) AlSiN3:Eu2+。
The reflective layer of the rotating color wheel is made of different materials, wherein the red reflective layer 52a is made of metal gold (Au), and the green reflective layer 52b, the blue reflective layer 52c and the yellow reflective layer 52d are made of metal silver (Ag) due to the small thermal effect of their reflected light. In addition, because silver is unstable in property and is easily vulcanized and oxidized in air, a protective material is required to be wrapped outside the silver layer to serve as the protective layers 53b,53c and 53d of the silver layer, and the protective material can be selected from metal gold, platinum or alloy thereof, mainly plays a role in isolating air and water vapor, and prevents the silver reflecting layer from being vulcanized and oxidized. Specifically, the protective layers 53b,53c, and 53d are disposed at the interfaces of the green light reflecting layer 52b, the blue light reflecting layer 52c, and the yellow light reflecting layer 52d with air, such as the outer edges of the fluorescent color wheel. The soldering layer 54 is mainly used to solder the light emitting layer, the reflective layer and the protective layer to the heat conductive substrate 55, so that the light emitting module is easy to conduct heat and dissipate heat. The heat conducting substrate 55 is a heat dissipating part of the color wheel, and is mainly used for conducting heat in the light emitting layer, so that it needs to have good heat dissipating performance, for example, it may be a ceramic heat conducting substrate such as silicon carbide or aluminum nitride, and further, in order to improve the bonding and heat dissipating effects, nickel gold may be plated on the surfaces of the silicon carbide substrate and the aluminum nitride substrate.
In particular, when the green light-emitting layer 51b employs Lu having an emission wavelength of 510nm3Al5O12:Ce3+The green phosphor adopts Y with the luminous wavelength of 540-555 nm for the yellow luminous layer 51d3Al5O12:Ce3+The red light emitting layer 51a of the yellow fluorescent powder adopts Y with the light emitting wavelength longer than 555nm3Al5O12:Ce3+、(Y,Gd)3Al5O12:Ce3+Or alpha-SiAlON: Eu2+、(Sr,Ca)AlSiN3:Eu2+And during fluorescent powder, a high-efficiency compact fluorescent color wheel structure without a decorative sheet can be realized.
Because the fluorescent color wheel needs to rotate for a long time when in use, the fluorescent color wheel has higher requirement on the adhesive force between the luminous layer and the metal reflecting layer, at the moment, a transition layer which can improve the adhesive force between the luminous layer and the metal reflecting layer, such as a nickel layer or a nickel-chromium alloy layer, is preferably arranged between the luminous layer and the metal reflecting layer, and the thickness of the transition layer is less than 2 nm.
The rotating fluorescent color wheel according to the embodiment 2 of the invention can obtain a light-emitting device with high red light emitting efficiency, high efficiency and compactness.
The raw materials listed in the invention, the upper and lower limits of the raw materials, the upper and lower limits of the process parameters and the values of the intervals can all realize the invention, and the examples are not listed; any simple modifications or equivalent changes made to the above embodiments according to the technical spirit of the present invention still fall within the scope of the technical solution of the present invention.
Claims (10)
1. The utility model provides a light-emitting device, includes from the bottom up and stacks gradually the reflection stratum and the luminescent layer that set up which characterized in that: the reflecting layer is a gold reflecting layer, the light emitting layer comprises one or more of Y3Al5O12: Ce3+ fluorescent powder with the light emitting peak wavelength larger than 555nm, and (Y, Gd)3Al5O12: Ce3+ fluorescent powder with the light emitting peak wavelength larger than 555nm, alpha-SiAlON: Eu2+ fluorescent powder and (Sr, Ca) AlSiN3: Eu2+ fluorescent powder, and the light emitting layer is used for receiving exciting light and emitting wide-spectrum laser.
2. The light-emitting device according to claim 1, further comprising a thermally conductive substrate disposed below the reflective layer, wherein the thermally conductive substrate is selected from an aluminum substrate, a copper substrate plated with nickel and gold, or a silicon carbide and aluminum nitride substrate plated with nickel and gold.
3. The light-emitting device according to claim 1, further comprising a transition layer disposed between the light-emitting layer and the reflective layer, the transition layer having a thickness of less than 2 nm.
4. A light-emitting device according to claim 3, wherein the transition layer is made of nickel or a nickel-chromium alloy.
5. The light-emitting device according to claim 2, further comprising a solder layer disposed between the reflective layer and the thermally conductive substrate, wherein the solder layer is an alloy solder layer selected from gold tin, silver tin, or bismuth tin.
6. The light-emitting device according to claim 1, wherein a doping concentration of Ce3+ in the Y3Al5O12: Ce3+ phosphor is 1.2 mol% or more.
7. The light-emitting device according to claim 1, wherein a doping concentration of Ce3+ in the (Y, Gd)3Al5O12: Ce3+ phosphor is 0.5 mol% or more and a doping concentration of Gd3+ is 10 mol% or more.
8. The light-emitting device according to claim 1, wherein the thickness of the gold reflective layer is 80 to 200 nm.
9. The light-emitting device according to any one of claims 1 to 8, further comprising a second light-emitting layer coplanar with the light-emitting layer, wherein a second reflective layer is disposed below the second light-emitting layer, wherein the second light-emitting layer comprises at least one of scattering particles, green phosphor, and yellow phosphor having an emission peak wavelength of not more than 555nm, and the second reflective layer is a silver reflective layer or an inorganic diffuse reflective layer.
10. The light-emitting device according to any one of claims 9, wherein the light-emitting layer is any one of a pure phase ceramic, a complex phase ceramic, or a fluorescent glass.
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| CN111365685B (en) | 2022-04-19 |
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