CN102522476B - Packaging structure of efficient light emitting diode light source - Google Patents
Packaging structure of efficient light emitting diode light source Download PDFInfo
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- CN102522476B CN102522476B CN201110436797.6A CN201110436797A CN102522476B CN 102522476 B CN102522476 B CN 102522476B CN 201110436797 A CN201110436797 A CN 201110436797A CN 102522476 B CN102522476 B CN 102522476B
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Abstract
A packaging structure of an efficient light emitting diode light source comprises an aluminizing substrate or a mirror aluminum substrate, a chip packaging area arranged on the substrate and a covering layer covered on the substrate. Visible light high-reflecting material layers are arranged at the positions between the covering layer and the substrate except an area corresponding to the chip packaging area. The covering layer comprises a first transparent piece, a second transparent piece and a sealing fluorescent glue layer arranged between the first transparent piece and the second transparent piece. The substrate is an aluminum-coated structure, has high reflectivity to wavelength less than 0.46 mum and improves light emitting efficiency of the section of wavelength. Simultaneously, yellow light, green light and red light excited by fluorescent powder have high reflectivity in the visible light high-reflecting material layers, and the light emitting efficiency of a white-light light emitting diode (LED) can be improved remarkably by adopting the packaging structure with a substrate area and a covering layer area.
Description
Technical field
The present invention relates to lighting apparatus field, more particularly refer to a kind of encapsulating structure of efficient light emitting diode light source.
Background technology
Be illustrated in figure 6 the relation between light wavelength and reflectivity of sending out of silver coating and aluminium coated, be illustrated in figure 7 the relation of emission wavelength and the reflectivity of Gold plated Layer.With reference to figure 6, Fig. 7, when the invention of ruddiness or ultrared light-emittingdiode, industry is all usingd the support of Gold plated Layer as pedestal, because emission wavelength is more than 0.6um, therefore can be suitable for, and high brightness ruddiness diode chip equally also be take Gold plated Layer as reflecting surface; Because the wavelength of visible ray green glow, green-yellow light, gold-tinted, orange light light-emittingdiode is 0.5-0.6um, if the stand base by Gold plated Layer, its reflectivity is low, and the stand base of using silver coating instead, just can improve the luminous efficiency of package assembling, this wave band light-emittingdiode chip, also with silver coating, has higher reflectivity relatively; The light-emittingdiode encapsulation of the following wavelength of 0.5um more can not be usingd Gold plated Layer as the stand base reflecting, because of its reflectivity extremely low, the stand base of silver coating is when luminous ripple 0.455um is following, its reflectivity is lower than aluminium coated ground stand base reflectivity on the contrary, the backside reflection face of the light-emittingdiode chip of this wave band also be take aluminium coated as good relatively, more in short-term, its reflection differences is apart from larger for wavelength.And the structure that the blue light of existing industry encapsulation 0.37-0.455um wavelength or ultraviolet light adopt silver coating causes light efficiency to reduce.
The white light LEDs that the habitual silver coating of industry becomes for blue-ray LED excitated fluorescent powder with the stand base of aluminium coated, its encapsulated result light efficiency of silver coating stand base is higher, with existing domestic LED chip, by specular aluminium, be that stand base is made the emitting led 130-150LM/ of reaching watt, yet the stand base with silver coating is made white light LEDs, its light efficiency can reach 160-180 LM/ watt, average increase by 21%, by Fig. 5, Fig. 6, silver coating, the known aluminium coated of reflectivity of aluminium lamination and wavelength is higher to the reflectivity of the blue light of the wavelength below 0.455um, so it excites the green-yellow light of the larger above wavelength of 0.5um, its reflectivity is low compared with silver coating relatively for ruddiness, therefore White-light LED package structure is still used silver coating ground stand base.
The encapsulating structure of existing LED chip, usually adopt the mode of coating fluorescent glue, but adopt the bad control of this kind of mode bright dipping colour temperature, industry adopts the encapsulating structure of the LED chip in silver-plated reflector simultaneously, reflectivity for the wavelength below 0.455um is lower, and light efficiency is low.
Summary of the invention
The encapsulating structure of a kind of efficient light emitting diode light source provided by the invention, its object is to overcome the bad control of encapsulating structure bright dipping colour temperature of existing luminous dipolar object light source, the shortcoming lower to the reflectivity of the wavelength below 0.455um, luminous efficiency is low.
The technical solution used in the present invention is as follows:
An encapsulating structure for efficient light emitting diode light source, comprises and aluminizing or the pedestal of specular aluminium and be located at the chip package district on pedestal.
Also comprise the cover layer being covered on pedestal, outside this cover layer and corresponding region, pedestal Jian Chuyu chip package district, all the other positions are equipped with the high layer of reflective material of visible ray, described cover layer comprise the first slide, the second slide and be located at the first slide and the second slide between sealing fluorescent adhesive layer.
The high layer of reflective material of described visible ray is silver coating.
The high layer of reflective material of described visible ray is multilayer film reflector.
The high layer of reflective material of described visible ray is located on pedestal.
The high layer of reflective material of described visible ray is located at cover surface.
Described chip package district's fixed chip is also coated with transparent silica gel.
Described pedestal and cover layer are square structure.
Described pedestal and cover layer are strip structure.
Known by the above-mentioned description of this invention, compare with existing technology, the invention has the advantages that:
1, the encapsulating structure of this efficient light emitting diode light source adopts and to aluminize or the pedestal of specular aluminium, has improved the reflectivity of the wavelength below 0.455um, and luminous efficiency is high, is applicable to blue light, ultraviolet light that blue light, ultraviolet leds form.
2, the encapsulating structure of this efficient light emitting diode light source, change the result that original the silver-plated pedestal of use just can reach high light efficiency or exceed luminous power completely, adopt fluorescent thin slice coverage mode, bright dipping colour temperature is better controlled, the Huang that simultaneously phosphor powder inspires, green, ruddiness have good reflector in the region of emulsion sheet and visible ray highly reflective material layer, can obtain higher light efficiency.
3, the encapsulating structure of this efficient light emitting diode light source adopts the base construction of aluminium coated or specular aluminium, can increase the luminous efficiency of this wave band, coordinate the waveband selection that excites of phosphor powder, utilize two region-type encapsulating structures of the present invention, can significantly improve the light efficiency of white light diode, reach the level of 230 LM/ watts.
4, the encapsulating structure of this efficient light emitting diode light source can promote white-light emitting efficiency, can reduce costs again, it is the important breakthrough of White-light LED illumination now, with the LED of world level 8-10 watt now, could replace the incandescent lamp of 60 watts completely, with two region-type encapsulating structures of the present invention, white light LEDs is as long as 4-5 watt can replace traditional incandescent lamp of 60 watts, adopt the LED bulb of this encapsulating structure without solving heat dissipation problem with aluminium radiator fin shell or fin, tectal fluorescent material adopts complete sealing means simultaneously, can extend the life-span of fluorescent material.
5, the selection in the chip of light-emittingdiode back of the body plating reflector will elect according to reflectivity the higher person of its emission wavelength, the light-emittingdiode chip of different wave length especially, and multilayer film (DBR) of its back of the body plating also should be take wavelength and be reached best reflectivity as design.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiment mono-.
Fig. 2 is the cutaway view along A-A direction in Fig. 1.
Fig. 3 is the structural representation of embodiment bis-.
Fig. 4 is the cutaway view along B-B direction in Fig. 3.
Fig. 5 is the structural representation of embodiment tri-.
Fig. 6 is the emission wavelength of silver coating and aluminium coated and the graph of a relation between reflectivity.
Fig. 7 is the emission wavelength of Gold plated Layer and the graph of a relation of reflectivity.
Embodiment
Embodiment mono-
With reference to figure 1, Fig. 2, a kind of encapsulating structure of efficient light emitting diode light source, comprise aluminizing or the pedestal 1 of specular aluminium, being located at chip package district 11 on pedestal 1, being covered in the cover layer 2 on pedestal 1 of square structure, outside this cover layer 2 and 11 corresponding regions, pedestal 1 Jian Chuyu chip package district, all the other positions are equipped with the high layer of reflective material 3 of visible ray, and cover layer 2 comprises the first slide 21, the second slide 22 and is located at the first slide 21 and the sealing fluorescent adhesive layer 23 of 22 of the second slidies.
The high layer of reflective material of above-mentioned visible ray is silver coating, and the high layer of reflective material 3 of this visible ray is plated on the second slide 22 bottom surfaces.
A kind of course of work of encapsulating structure of efficient light emitting diode light source is as follows: with reference to figure 1, Fig. 2, cover layer 2 can be separated from each other production with pedestal 1, by the second slide 22 bottom surfaces of cover layer 2 except the position corresponding with chip package district 11, the equal silver coating in other position, chip is fixed on to chip package district 11 and is coated with transparent silica gel, and the 11 bottom wirings in encapsulation region, by cover layer 2 and pedestal 1 gummed.Because pedestal 1 is aluminium coated or specular aluminium structure, wavelength below 0.45um is had to higher reflectivity, increased the luminous efficiency of this section of wavelength, fluorescent material excites simultaneously gold-tinted, green glow, ruddiness have larger reflectivity in the high layer of reflective material 3 of visible ray, adopt the encapsulating structure of two region-types, can significantly improve the luminous efficiency of white light diode LED, reach more than 230LM/ watt, this encapsulating structure is without solving heat dissipation problem with aluminium heat-dissipating casing or fin simultaneously, can use working of plastics instead and make shell, increase the fail safe of LED bulb source.
The white light LEDs that above-mentioned encapsulating structure becomes for blue light, ultraviolet leds excitated fluorescent powder.
In above-described embodiment, the high layer of reflective material 3 of visible ray is plated on the second slide 22 bottom surfaces, can also be plated on the position of pedestal 1 except chip encapsulation region 11, the high layer of reflective material 3 of visible ray can also adopt the form of support to be fixed on pedestal 1 surface simultaneously, the high layer of reflective material 3 of above-mentioned visible ray, except silver-plated, can also be multilayer film reflector simultaneously.
Embodiment bis-
This embodiment and embodiment mono-are roughly the same, with reference to figure 3, Fig. 4, just square pedestal 1 are made into the pedestal of strip.
Embodiment tri-
This embodiment and embodiment mono-, embodiment bis-are roughly the same, with reference to figure 5, have just reduced the high layer of reflective material of cover layer and visible ray, and this structure forms blue light, ultraviolet light for blue light, ultraviolet leds.
Above are only the specific embodiment of the present invention, but design concept of the present invention is not limited to this, allly utilizes this design to carry out the change of unsubstantiality to this structure, all should belong to the behavior of invading protection range of the present invention.
Claims (8)
1. an encapsulating structure for efficient light emitting diode light source, is characterized in that: comprise and aluminizing or the pedestal of specular aluminium and be located at the chip package district on pedestal; Also comprise the cover layer being covered on pedestal, outside this cover layer and corresponding region, pedestal Jian Chuyu chip package district, all the other positions are equipped with the high layer of reflective material of visible ray, described cover layer comprise the first slide, the second slide and be located at the first slide and the second slide between sealing fluorescent adhesive layer.
2. the encapsulating structure of a kind of efficient light emitting diode light source according to claim 1, is characterized in that: the high layer of reflective material of described visible ray is silver coating.
3. the encapsulating structure of a kind of efficient light emitting diode light source according to claim 1, is characterized in that: the high layer of reflective material of described visible ray is multilayer film reflector.
4. the encapsulating structure of a kind of efficient light emitting diode light source according to claim 1, is characterized in that: the high layer of reflective material of described visible ray is located on pedestal.
5. the encapsulating structure of a kind of efficient light emitting diode light source according to claim 1, is characterized in that: the high layer of reflective material of described visible ray is located at cover surface.
6. the encapsulating structure of a kind of efficient light emitting diode light source according to claim 1, is characterized in that: described chip package district's fixed chip is also coated with transparent silica gel.
7. the encapsulating structure of a kind of efficient light emitting diode light source according to claim 1, is characterized in that: described pedestal and cover layer are square structure.
8. the encapsulating structure of a kind of efficient light emitting diode light source according to claim 1, is characterized in that: described pedestal and cover layer are strip structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110436797.6A CN102522476B (en) | 2011-12-23 | 2011-12-23 | Packaging structure of efficient light emitting diode light source |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110436797.6A CN102522476B (en) | 2011-12-23 | 2011-12-23 | Packaging structure of efficient light emitting diode light source |
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| Publication Number | Publication Date |
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| CN102522476A CN102522476A (en) | 2012-06-27 |
| CN102522476B true CN102522476B (en) | 2014-03-12 |
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| CN201110436797.6A Expired - Fee Related CN102522476B (en) | 2011-12-23 | 2011-12-23 | Packaging structure of efficient light emitting diode light source |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103044073A (en) * | 2012-12-11 | 2013-04-17 | 杭州杭科光电股份有限公司 | Surface treatment technology for ceramic substrate of LED (light-emitting diode) area light source |
| CN105098039A (en) * | 2015-06-05 | 2015-11-25 | 青岛海信电器股份有限公司 | Quantum dot light-emitting component, backlight module and display device |
| CN111365685B (en) * | 2018-12-26 | 2022-04-19 | 深圳光峰科技股份有限公司 | Light emitting device with high red light brightness and high reliability |
| CN113654008B (en) * | 2021-07-29 | 2024-01-30 | 广东洲明节能科技有限公司 | White light illuminating device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1071150A (en) * | 1991-09-19 | 1993-04-21 | 北京理工大学 | Method for making imitating gem coloured glass clad |
| CN101307872A (en) * | 2007-05-15 | 2008-11-19 | 株式会社日立制作所 | Lighting system and liquid crystal display using the same |
| CN101431134A (en) * | 2008-12-02 | 2009-05-13 | 山西乐百利特科技有限责任公司 | High-power LED element capable of improving illumination efficiency |
| CN101865378A (en) * | 2010-05-17 | 2010-10-20 | 中山大学佛山研究院 | LED surface light-emitting lamp |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4172196B2 (en) * | 2002-04-05 | 2008-10-29 | 豊田合成株式会社 | Light emitting diode |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1071150A (en) * | 1991-09-19 | 1993-04-21 | 北京理工大学 | Method for making imitating gem coloured glass clad |
| CN101307872A (en) * | 2007-05-15 | 2008-11-19 | 株式会社日立制作所 | Lighting system and liquid crystal display using the same |
| CN101431134A (en) * | 2008-12-02 | 2009-05-13 | 山西乐百利特科技有限责任公司 | High-power LED element capable of improving illumination efficiency |
| CN101865378A (en) * | 2010-05-17 | 2010-10-20 | 中山大学佛山研究院 | LED surface light-emitting lamp |
Non-Patent Citations (1)
| Title |
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| JP特开2003-298117A 2003.10.17 |
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Effective date of registration: 20161226 Address after: Haicang District of Xiamen City, Fujian province 361000 in Cang industrial district Fuquan Road No. 11 two building basement Patentee after: Xiamen morning lighting technology Co., Ltd. Address before: The Eastern Jin Huai street Quanzhou Fengze District in Fujian province 362000 billion villa 2 Commercial Street building 8-4D Patentee before: Quanzhou Wonled Lighting Co., Ltd. |
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Granted publication date: 20140312 Termination date: 20191223 |