CN108752032A - 一种陶瓷基覆铜板的制备方法 - Google Patents
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Abstract
本发明属于覆铜板制备技术领域,尤其涉及一种陶瓷基覆铜板的制备方法。本发明利用胶膜/覆胶膜热压法,解决了氧化亚铜喷涂法需要喷涂设备带来的设备维护和维修、喷涂不均、因温湿度问题造成喷头堵塞等技术问题。本发明通过粗糙、助剂的处理,解决了胶膜/覆胶膜与陶瓷基板的耐热低、起泡分层、铜线脱落等问题,制得的覆铜板耐热性高、层间结合力强、层间剥离强度高,提高产品的可靠性;陶瓷基覆铜板的制备方法,具有成本低、生产效率高、操作简单等特点,满足工业化大规模生产。
Description
技术领域
本发明属于覆铜板制备技术领域,尤其涉及一种陶瓷基覆铜板的制备方法。
背景技术
随着科学技术的发展,对许多电气设备的承载载体覆铜板,提出了更高的导热、耐热、抗高压、高电流、高尺寸稳定性、低信号损耗等要求,尤其是综合需求以上其中部分性能。目前常规的覆铜板,例如:FR-4、金属基板、CEM-3、CEM-1等远远不能满足,从而开发了陶瓷基覆铜板。
陶瓷基覆铜板具有热导率高、高耐热、耐化学腐蚀、抗高电压电流、高尺寸稳定性、低信号损耗等性能,是理想的特殊电气电路用载体。
生产陶瓷基板的工艺大概可分为以下几种方法:
1、直接键合法(烧结法)
铜箔在高温和一定氧化气氛下,不添加任何粘结剂直接键合到陶瓷基板,牢固致密地结合在一起;Cu2O和Al2O3发生如下化学反应:
Cu2O+Al2O3→CuAlO2
待冷却后,Cu2O和Al2O3通过Cu-Al-O化学键致密地键合在一起;而氧化亚铜的添加,目前多采用氧化亚铜喷涂法,氧化亚铜喷涂法需要喷涂设备,并随之带来设备维护和维修、喷涂不均、因温湿度问题造成的喷头堵塞等技术问题。
2、粘结热压法
在陶瓷基片和铜箔之间加入粘结剂或胶膜,热压,将两者粘结在一起。但是,陶瓷基板与粘结剂或胶膜剂之间因粘结力弱小,经常出现耐热低、起泡分层、铜线脱落等问题,使产品不具备安全可靠性。
3、真空溅射法
真空溅射的方式对陶瓷基板进行镀铜。它的优点在于:精度高、平整度好、结合力好。而缺点在于:这种技术只能制作薄板(厚度<300μm),而且它的成本较高,产量受限,经常导致不能按时出货。
上述方法均有各种缺陷,例如:操作繁琐、条件苛刻、各层厚度不均匀、层间结合力不好、层间剥离强度低、成本高、生产效率低、难以工业化大规模生产等,导致生产应用性不强。这些问题都是本领域亟待解决的技术问题。
发明内容
本发明针对上述现有技术存在的不足,提供一种陶瓷基覆铜板的制备方法。
本发明解决上述技术问题的技术方案如下:一种陶瓷基覆铜板的制备方法,步骤如下:
(1)对陶瓷板进行粗化处理,粗化至Ra值为8-20μm;
(2)将步骤(1)粗化后的陶瓷板清洗后,涂覆助剂;
(3)再涂覆一层胶膜或覆胶膜;
(4)在经过步骤(3)处理后的陶瓷板含胶面一侧覆加一层铜箔,热固化成型。
进一步,步骤(1)所述的粗化处理为物理法或化学法的一种或两种结合。
进一步,所述的物理法为金刚砂削切打磨、激光斜切打磨或喷砂;
所述的化学法为酸洗或碱洗;其中,所述酸洗使用的酸洗液为强酸溶液;所述碱洗使用的碱洗液为强碱溶液。
更进一步,所述的强酸溶液为氢氟酸、硝酸或盐酸;所述的强碱溶液为氢氧化钠溶液或氢氧化钾溶液。
进一步,步骤(2)中所述的清洗为:将步骤(1)粗化后的陶瓷板采用浓度5-10wt%的氢氧化钠溶液冲洗5-10min,再采用软水在0.3-2MPa条件下冲洗,最后用风刀吹干。
进一步,步骤(2)中所述的助剂为N-苯基-r-氨丙基三甲基硅烷或二(γ-三甲氧基甲硅烷基丙基)胺的一种或两种,助剂层厚为0.5-5μm。
进一步,步骤(3)中所述的胶膜为环氧类、导热胶类、聚乙烯醇类或苯氧树脂类为主树脂的粘结剂;所述的覆胶膜为环氧类、导热胶类、聚乙烯醇类或苯氧树脂类为主树脂的未完全固化的PP;
所述的胶膜或覆胶膜的厚度为30-130μm。
更进一步,所述的环氧类胶膜/覆胶膜为:按重量份数计,将100份双酚A型含溴环氧树脂、2.3份双氰胺、0.08份咪唑、100份DMF和30份二氧化硅混合,搅拌溶解后,直接涂覆在陶瓷基表面烘干成膜,或浸渍增强材料后烘干成膜;
所述的导热胶类胶膜/覆胶膜为:按重量份数计,将1份双氰胺、13份二氨基二苯砜、0.08份咪唑、120份DMF、15份苯氧树脂、5份聚乙烯醇缩丁醛、10份丁腈橡胶、100份环氧树脂和500份导热填料(陶瓷粉)混合,搅拌溶解后,直接涂覆在陶瓷基表面烘干成膜,或浸渍增强材料后烘干成膜;
所述的聚乙烯醇类胶膜/覆胶膜为:按重量份数计,将20份聚乙烯醇、220份甲醇、10份酚醛树脂和50份无机填料混合,搅拌溶解后,直接涂覆在陶瓷基表面烘干成膜,或浸渍增强材料后烘干成膜;
所述的苯氧树脂类胶膜/覆胶膜为:按重量份数计,将40份苯氧树脂、220份甲苯、20份酚醛树脂、0.4份咪唑和60份无机填料混合,搅拌溶解后,直接涂覆在陶瓷基表面烘干成膜,或浸渍增强材料后烘干成膜;
进一步,步骤(4)中所述的热固化成型为:在50-220℃、0.2-5MPa条件下固化10-200min成型。
本发明的特点和有益效果在于:
1、本发明利用胶膜/覆胶膜热压法,解决了氧化亚铜喷涂法需要喷涂设备带来的设备维护和维修、喷涂不均、因温湿度问题造成喷头堵塞等技术问题。
2、本发明通过粗糙、助剂的处理,解决了胶膜/覆胶膜与陶瓷基板的耐热低、起泡分层、铜线脱落等问题,制得的覆铜板耐热性高、层间结合力强、层间剥离强度高,提高产品的可靠性;陶瓷基覆铜板的制备方法,具有成本低、生产效率高、操作简单等特点,满足工业化大规模生产。
具体实施方式
以下结合实例对本发明的原理和特征进行描述,所举实例只用于解释本发明,并非用于限定本发明的范围。
实施例1
一种陶瓷基覆铜板的制备方法,步骤如下:
(1)对陶瓷板采用物理法进行粗化处理,粗化至Ra值为8-20μm;
(2)将步骤(1)粗化后的陶瓷板采用浓度5wt%的氢氧化钠溶液冲洗10min,再采用软水在1.0MPa条件下冲洗,最后用风刀吹干;涂覆一层厚度为2.5μm的N-苯基-r-氨丙基三甲基硅烷;
(3)再涂覆一层厚度为100μm的环氧类胶膜;
(4)在经过步骤(3)处理后的陶瓷板含胶面一侧覆加一层铜箔,在100-120℃、5MPa条件下固化50-120min成型。
对比例1
一种粘结热压法陶瓷基覆铜板的制备方法,步骤如下:
(1)直接使用陶瓷板,在其一面涂覆胶膜;
(2)在陶瓷板含胶面覆加一层铜箔,在100-120℃、5MPa条件下固化50-120min成型。
将实施例1和对比例1所得覆铜板进行性能测试,各项主要指标如下表1。
表1
技术参数 | 对比例1 | 实施例1 |
常态剥离强度N/mm | 1.2 | 1.6 |
1000h/150℃处理后离强度N/mm | 0.8 | 1.4 |
热应力S/288℃ | 120 | 300 |
热阻℃/W | 180 | 190 |
介电常数(1GHz) | 4 | 3.8 |
击穿电压KV/mm | 14 | 16 |
电阻率Ω.CM | 1014 | 1014 |
绝缘电阻MΩ | 4X10-3 | 4X10-4 |
由表1可以看出,与对比例1相比,本发明制得的覆铜板的性能得到很大提升。
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (8)
1.一种陶瓷基覆铜板的制备方法,其特征在于,步骤如下:
(1)对陶瓷板进行粗化处理,粗化至Ra值为8-20μm;
(2)将步骤(1)粗化后的陶瓷板清洗后,涂覆助剂;
(3)再涂覆一层胶膜或覆胶膜;
(4)在经过步骤(3)处理后的陶瓷板含胶面一侧覆加一层铜箔,热固化成型。
2.根据权利要求1所述的制备方法,其特征在于,步骤(1)所述的粗化处理为物理法或化学法的一种或两种结合。
3.根据权利要求2所述的制备方法,其特征在于,所述的物理法为金刚砂削切打磨、激光斜切打磨或喷砂;
所述的化学法为酸洗或碱洗;其中,所述酸洗使用的酸洗液为强酸溶液;所述碱洗使用的碱洗液为强碱溶液。
4.根据权利要求3所述的制备方法,其特征在于,所述的强酸溶液为氢氟酸、硝酸或盐酸;所述的强碱溶液为氢氧化钠溶液或氢氧化钾溶液。
5.根据权利要求1所述的制备方法,其特征在于,步骤(2)中所述的清洗为:将步骤(1)粗化后的陶瓷板采用浓度5-10wt%的氢氧化钠溶液冲洗5-10min,再采用软水在0.3-2MPa条件下冲洗,最后用风刀吹干。
6.根据权利要求1所述的制备方法,其特征在于,步骤(2)中所述的助剂为N-苯基-r-氨丙基三甲基硅烷或二(γ-三甲氧基甲硅烷基丙基)胺的一种或两种,助剂层厚为0.5-5μm。
7.根据权利要求1所述的制备方法,其特征在于,步骤(3)中所述的胶膜为环氧类、导热胶类、聚乙烯醇类或苯氧树脂类为主树脂的粘结剂;所述的覆胶膜为环氧类、导热胶类、聚乙烯醇类或苯氧树脂类为主树脂的未完全固化的PP;
所述的胶膜或覆胶膜的厚度为30-130μm。
8.根据权利要求1所述的制备方法,其特征在于,步骤(4)中所述的热固化成型为:在50-220℃、0.2-5MPa条件下固化10-200min成型。
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CN109676533A (zh) * | 2018-12-29 | 2019-04-26 | 深圳仕上电子科技有限公司 | 金属工件的表面处理方法 |
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CN109676533A (zh) * | 2018-12-29 | 2019-04-26 | 深圳仕上电子科技有限公司 | 金属工件的表面处理方法 |
CN111320487A (zh) * | 2020-03-05 | 2020-06-23 | 哈尔滨工业大学(威海) | 氮化硅陶瓷表面改性辅助直接扩散连接方法 |
CN114423173A (zh) * | 2021-12-13 | 2022-04-29 | 南通威斯派尔半导体技术有限公司 | 一种高键合强度的覆铜陶瓷基板及其制备工艺 |
CN118239797A (zh) * | 2024-03-26 | 2024-06-25 | 江苏富乐华功率半导体研究院有限公司 | 一种高可靠性的zta陶瓷覆铜基板的制备方法 |
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