CN108711584A - 一种制备铜铟铝碲薄膜的方法 - Google Patents
一种制备铜铟铝碲薄膜的方法 Download PDFInfo
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- 239000010949 copper Substances 0.000 title claims abstract description 28
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 239000004411 aluminium Substances 0.000 title claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 22
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 22
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910052714 tellurium Inorganic materials 0.000 title claims abstract description 22
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 239000010408 film Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000005693 optoelectronics Effects 0.000 claims abstract description 15
- 239000002243 precursor Substances 0.000 claims abstract description 14
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims abstract description 9
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims abstract description 8
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 229910003069 TeO2 Inorganic materials 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000005357 flat glass Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 239000008236 heating water Substances 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000035484 reaction time Effects 0.000 abstract description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 abstract 2
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 abstract 1
- 238000011161 development Methods 0.000 description 4
- JLDSOYXADOWAKB-UHFFFAOYSA-N aluminium nitrate Inorganic materials [Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O JLDSOYXADOWAKB-UHFFFAOYSA-N 0.000 description 2
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 208000033962 Fontaine progeroid syndrome Diseases 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
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Abstract
一种制备铜铟铝碲薄膜材料的制备方法，属于光电薄膜制备技术领域，本发明通过如下步骤得到，首先清洗玻璃基片，然后将TeO2、Cu(NO3)2、In(NO3)3和Al(NO3)3先后放入溶剂中，配制澄清透明溶液，用旋涂法在玻璃片上得到前驱体薄膜，自然晾干，放入有水合联氨的可密闭容器，使前驱体薄膜样品不与联氨接触，将装有前驱体薄膜样品的密闭容器进行加热后取出样品进行干燥，可通过增加反应次数和热处理工艺改善薄膜质量，得到铜铟铝碲光电薄膜。本发明不需要高温高真空条件，对仪器设备要求低，生产成本低，生产效率高，易于操作。所得铜铟铝碲光电薄膜有较好的连续性和均匀性，这种新工艺为制备高性能的铜铟铝碲光电薄膜提供了一种成本低、可实现工业化的生产方法。
Description
技术领域
本发明属于太阳能电池用光电薄膜制备技术领域，尤其涉及一种制备铜铟铝碲薄膜的方法。
背景技术
众所周知，经济的高速发展必然带来能源消耗量的激增。随着近年来我国社会和经济高速发展，能源紧缺及消费能源带来的污染已成为国内社会发展中的突出问题，因此开发利用清洁能源对保护环境、经济可持续发展和构筑和谐社会都有重要的意义。为了更充分的利用太阳能这种清洁、安全和环保的可再生资源，近年来光电材料的研究和应用日益受到重视。
铜铟铝碲薄膜太阳电池目前可以认为是最有发展前景的薄膜电池，这是因为其吸收层材料CuIn1-xAlxTe2具有较高的光电转化率等一系列优点。特别是以铜铟铝碲光电薄膜的制备研究已经取得了较大的进展。
目前铜铟铝碲薄膜的制备方法主要有溶剂热法、喷射热解法、离子烧结法、化学沉积法、反应溅射法、真空蒸发法等。由于原料成本低，因此是一种非常有发展前途的光电薄膜材料，但现有工艺路线复杂、制备成本高，因而需要探索低成本的制备工艺。
如前面所述方法一样，其它方法也有不同的缺陷。与本发明相关的还有如下文献：
[1] Fahim Ahmed, Naohito Tsujii, Takao Mori. Microstructure analysis andthermoelectric properties of iron doped CuGaTe2. Journal of Materiomics,2018.
主要研究了Fe掺杂对黄铜矿型CuGaTe2结构和热输运性质的影响，采用放电等离子烧结法制备多晶样品CuGa1-xFexTe2（x为0～0.05）。
[1] Zhang Jian, Qin, Xiaoying; Li, Di; et al. Enhanced thermoelectricperformance of CuGaTe2 by Gd-doping and Te incorporation. Intermetallics,2015.
采用熔融法制备了掺杂CuGaTe2，在300～800K的温度范围内研究了它们的热电性能。结果表明，Gd掺杂和Te掺入的协同效应显著提高了CuGaTe2的热电性能。
[2] Fujii, Yosuke; Kosuga, Atsuko. High-Temperature Formation Phasesand Crystal Structure of Hot-Pressed Thermoelectric CuGaTe2 with Chalcopyrite-Type Structure. Journal of Electronic Materials, 2017.
研究了热压CuGaTe2的300～800 K的温度相关的形成相和晶体结构，多晶CuGaTe2具有黄铜矿型结构，通过热压固化是作为中温热电材料的潜在候选材料。
[4] Manorama Lakhea, S.K. Mahapatra b, Nandu B.Chaurea. Developmentof CuInTe2 thin film solar cells by electrochemical route with lowtemperature (80 ◦C) heat treatment procedure. Materials Science andEngineering, 2017.
主要研究了连续低温热处理对电沉积制备CuInTe2（CIT）薄膜的性能的影响。
[5] Li Weixin, Luo Yubo, Zheng Yun, et al. Enhancement of thethermoelectric performance of CuInTe2 via SnO2 in situ replacement. Journal ofMaterials Science-Materials In Electronics, 2018.
采用原位诱导的纳米结构作为提高p型CuInTe2基热电材料热电性能的另一种途径，通过原位取代SnO2和CuInTe2，在SnO2样品中形成分散的氧化铟纳米颗粒。
[6] Zhang Xiao, Yang Lei, Guo Zenglong, et al. Rapid synthesis ofCuInTe2 ultrathin nanoplates with enhanced photoelectrochemical properties.Chemical communications, 2017.
采用快速胶体合成法合成了超薄单晶CuInTe2二维（2D）纳米板，对其生长机理进行了详细的研究。
[7] Ntholeng N., Mojela B., Gqoba S, et al. Colloidal synthesis ofpure CuInTe2 crystallites based on the HSAB theory. New journal of chemistry,2016.
利用胶体法广泛用于合成三元和四元硫化铜和硒化物，研究了这些纳米结构的形成途径和结晶机理。
[8] Li, Shuai; Guo, Yong-Quan. Structures and PhotoelectricProperties of Ce and Co Doped CuInTe2 Semiconductor. 2nd Annual InternationalConference on Advanced Material Engineering (AME),2016.
主要研究了采用真空电弧熔炼法成功合成了CuIn1-xCeCeCOyTe2的样品，对Ce和Co掺杂CuInTe2的结构和光电性能进行了研究。
发明内容
本发明为了解决现有制备技术的不足，发明了一种与现有制备方法完全不同的铜铟铝碲薄膜材料的制备工艺。
本发明采用旋涂-化学共还原法制备铜铟铝碲薄膜材料，采用玻璃片或硅片为基片，以Cu(NO3)2、In(NO3)3、Al(NO3)3和TeO2为原料，以盐酸为溶剂，先在盐酸中添加TeO2，待其反应完全后再加入Cu(NO3)2、In(NO3)3和Al(NO3)3，使其充分反应。先以旋涂法制备一定厚度的铜铟铝碲前驱体薄膜，以水合联氨为还原剂，在密闭容器内在较低温度下加热，使前驱体薄膜还原并发生合成反应，可通过增加反应次数和反应后热处理改善所制备薄膜质量，得到目标产物。
本发明的具体制备方法包括如下顺序的步骤：
a.进行基片的清洗，本实验选择玻璃片或硅片作为基片，首先将玻璃片或硅片切至20mm×20mm×2mm大小作为薄膜基片，然后用去离子水清洗2~3次，随后经过稀硫酸煮沸30~40min、水浴加热40~50min、去离子水超声清洗20min，这三个重要清洗步骤后，用双氧水浸泡保存备用即可。
b.将Cu(NO3)2、In(NO3)3、Al(NO3)3和TeO2放入溶剂中，使溶液中的物质均匀混合。具体地说，可以先将2.0～5.0份TeO2放入30～120份的溶剂中，其中溶剂为盐酸。待其完全反应后，将1.0～3.0份Cu(NO3)2、1.0～3.0份In(NO3)3和0.1～3.0份Al(NO3)3放入，使溶液中的物质均匀混合。
c.制作外部均匀涂布步骤b所述溶液的基片，并烘干，得到前驱体薄膜样品。可以将上述溶液滴到放置在匀胶机上的基片上，再启动匀胶机以200～3500转/分旋转一定时间，使滴上的溶液涂布均匀后，并对基片进行自然晾干后，再次重复滴上前述溶液和旋涂后再自然晾干，如此重复2～8次，于是在基片上得到了一定厚度的前驱体薄膜样品。
d.将步骤c所得前驱体薄膜样品置于支架上，放入有水合联氨的可密闭容器，使前驱体薄膜样品不与联氨接触。水合联氨放入量为30.0～45.0份。将上述装有前驱体薄膜样品的密闭容器放入烘箱中，加热至160～220℃之间，保温时间10～60小时，然后冷却到室温取出。
e.取出自然干燥后，重复b、c和d步骤2~6次，以增加所制备薄膜的厚度，减少薄膜缺陷。
f.将步骤e所得物，使其常温自然干燥后，增加热处理工艺，在管式加热炉中加热至200~400℃，保温5~15小时，即得到铜铟铝碲光电薄膜。
本发明不需要高真空条件，对仪器设备要求低，生产成本低，生产效率高，易于操作。所得铜铟铝碲光电薄膜有较好的连续性和均匀性，主相为CuIn1-xAlxTe2相，可以实现低成本大规模的工业化生产。
具体实施方式
实施例1
a.玻璃基片或硅基片的清洗：如前所述进行清洗基片,大小为20mm×20mm×2mm。
b.可以先将2.0份TeO2放入30～120份的溶剂中，其中溶剂为盐酸。待其完全反应后，将1.0份Cu(NO3)2、0.9份In(NO3)3和0.7份Al(NO3)3放入，使溶液中的物质均匀混合。
c.将上述溶液滴到放置在匀胶机上的玻璃基片上，再启动匀胶机，匀胶机以200转/分转动5秒，以3000转/分旋转15秒，使滴上的溶液涂布均匀后，对基片进行烘干后，再次重复滴上前述溶液和旋涂后再烘干，如此重复6次，于是在基片上得到了一定厚度的前驱体薄膜样品。
d.将步骤c所得前驱体薄膜样品置于支架上，放入有水合联氨的可密闭容器，使前驱体薄膜样品不与联氨接触。水合联氨放入量为40.0份。将上述装有前驱体薄膜样品的密闭容器放入烘箱中，加热至200℃之间，保温时间20小时，然后冷却到室温取出。
e.取出自然干燥后，重复b、c和d步骤4次，以增加所制备薄膜的厚度，减少薄膜缺陷。
f.将步骤e所得物，使其常温自然干燥后，增加热处理工艺，在管式加热炉中加热至300℃，保温10小时，即得到铜铟铝碲光电薄膜。
Claims (5)
1.一种制备铜铟铝碲薄膜的方法，包括如下顺序的步骤：
玻璃基片或硅基片的清洗；
先将2.0～5.0份TeO2放入30～120份的溶剂中，待其完全反应后，将1.0～3.0份Cu(NO3)2、1.0～3.0份In(NO3)3和0.1～3.0份Al(NO3)3放入，使溶液中的物质均匀混合；
制作表面均匀涂布步骤b所述溶液的基片，自然晾干，得到前驱体薄膜样品；
d.将步骤c所得前驱体薄膜样品置于支架上，放入有水合联氨的可密闭容器，使前驱体薄膜样品不与联氨接触；水合联氨放入量为30.0～45.0份；将上述装有前驱体薄膜样品的密闭容器放入烘箱中，加热至160～220℃之间，保温时间10～60小时，然后冷却到室温取出；
e.取出自然干燥后，重复b、c和d步骤2~6次，以增加所制备薄膜的厚度；
f.将步骤e所得物，使其常温自然干燥后，增加热处理工艺，在管式加热炉中加热至200~400℃，保温5~15小时，即得到铜铟铝碲光电薄膜。
2.如权利要求1所述的一种制备铜铟铝碲光电薄膜的方法，其特征在于，步骤a所述清洗，将玻璃片或硅片切至20mm×20mm×2mm大小作为薄膜基片，然后用去离子水清洗2~3次，随后经过稀硫酸煮沸30~40min、水浴加热40~50min、去离子水超声清洗20min这三个重要清洗步骤后，用双氧水浸泡保存备用即可。
3.如权利要求1所述的一种制备铜铟铝碲光电薄膜的方法，其特征在于，步骤b所述溶剂为盐酸溶液。
4.如权利要求1所述的一种制备铜铟铝碲光电薄膜的方法，其特征在于，步骤c所述均匀涂抹的基片，是通过匀胶机旋涂，匀胶机以200～3500转/分旋转，然后对基片进行烘干后，再次如此重复2～8次，得到了一定厚度的前驱体薄膜样品。
5.如权利要求1所述的一种制备铜铟铝碲光电薄膜的方法，其特征在于，步骤d所述密闭容器内放入30.0～45.0份水合联氨。
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| CN102484164A (zh) * | 2010-03-05 | 2012-05-30 | 株式会社东芝 | 化合物薄膜太阳能电池及其制造方法 |
| CN103396009A (zh) * | 2013-07-09 | 2013-11-20 | 山东建筑大学 | 一种制备铜铝碲薄膜的方法 |
| CN103449734A (zh) * | 2013-07-09 | 2013-12-18 | 山东建筑大学 | 一种制备铜铝硫光电薄膜的方法 |
| CN106057930A (zh) * | 2016-06-15 | 2016-10-26 | 山东建筑大学 | 一种由氯化铜和氯化镓制备铜镓硒光电薄膜的方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102484164A (zh) * | 2010-03-05 | 2012-05-30 | 株式会社东芝 | 化合物薄膜太阳能电池及其制造方法 |
| CN103396009A (zh) * | 2013-07-09 | 2013-11-20 | 山东建筑大学 | 一种制备铜铝碲薄膜的方法 |
| CN103449734A (zh) * | 2013-07-09 | 2013-12-18 | 山东建筑大学 | 一种制备铜铝硫光电薄膜的方法 |
| CN106057930A (zh) * | 2016-06-15 | 2016-10-26 | 山东建筑大学 | 一种由氯化铜和氯化镓制备铜镓硒光电薄膜的方法 |
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