CN108667434B - Low-voltage low-output impedance trans-impedance amplifier - Google Patents

Low-voltage low-output impedance trans-impedance amplifier Download PDF

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Publication number
CN108667434B
CN108667434B CN201810324422.2A CN201810324422A CN108667434B CN 108667434 B CN108667434 B CN 108667434B CN 201810324422 A CN201810324422 A CN 201810324422A CN 108667434 B CN108667434 B CN 108667434B
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mos tube
electrode
low
drain electrode
voltage
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CN108667434A (en
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陈超
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Southeast University Wuxi Institute Of Integrated Circuit Technology
Southeast University
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Southeast University Wuxi Institute Of Integrated Circuit Technology
Southeast University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a low-voltage low-output impedance trans-impedance amplifier, which comprises first to tenth MOS (metal oxide semiconductor) tubes, a first resistor and a second resistor, wherein the MOS tubes form a two-stage amplifier, the first stage is of a common-gate amplifier structure, and the second stage is of a common-source amplifier structure; the resistor is bridged between the input end and the output end, so that low input impedance and low output impedance are ensured. The structure can work under low power supply voltage, improves the current conversion efficiency and relieves the influence of out-of-band interference signals on the working point of the circuit.

Description

Low-voltage low-output impedance trans-impedance amplifier
Technical Field
The invention belongs to the technical field of transimpedance amplifiers, and particularly relates to a low-voltage low-output impedance transimpedance amplifier.
Background
With the continuous reduction of the process size and the driving of low power consumption applications, the power supply voltage of the analog integrated circuit is continuously moving toward a lower direction. However, due to the problems of leakage current, etc., the threshold voltage of the transistor is not continuously reduced with the feature size but stabilized at the level of 350mV to 450mV, which brings a great challenge to the conventional analog circuit design. The swing of the analog circuit is greatly limited under the low voltage condition, so the signal operation and processing method based on the current mode becomes an important means for designing the low voltage analog circuit. As a core module of the current mode circuit, the design of the transimpedance amplifier plays a key role. The transimpedance amplifier not only needs to be capable of working under a lower power supply voltage, but also has low input impedance and low output impedance which directly determine the current conversion efficiency and the driving capability. On one hand, the traditional OTA-based trans-impedance amplifier is difficult to work under a lower power supply voltage, on the other hand, the traditional OTA-based trans-impedance amplifier can only provide a lower input impedance in a bandwidth, and can bring about the deviation of an operating point under the action of a stronger out-of-band interference signal.
Disclosure of Invention
The invention aims to provide a low-voltage low-output impedance trans-impedance amplifier which can work under low power supply voltage, improve the current conversion efficiency and relieve the influence of an out-of-band interference signal on a circuit working point.
In order to achieve the above purpose, the solution of the invention is:
a low-voltage low-output impedance trans-impedance amplifier comprises first to tenth MOS tubes, a first resistor and a second resistor, wherein the grid electrode of the first MOS tube is connected with a first bias voltage, the source electrode of the first MOS tube is connected with a power supply, and the drain electrode of the first MOS tube is connected with the source electrode of a third MOS tube; the source electrode of the third MOS tube is an input current anode, the grid electrode of the third MOS tube is grounded, and the drain electrode of the third MOS tube is connected with the drain electrode of the seventh MOS tube; the grid electrode of the seventh MOS tube is connected with the second bias voltage, and the source electrode of the seventh MOS tube is grounded; the source electrode of the second MOS tube is connected with a power supply, the grid electrode of the second MOS tube is connected with the drain electrode of the third MOS tube, the drain electrode of the second MOS tube is connected with the drain electrode of the eighth MOS tube, and the drain electrode of the second MOS tube is a voltage output cathode; the grid electrode of the eighth MOS tube is connected with the second bias voltage, and the source electrode of the eighth MOS tube is grounded; the anode of the first resistor is connected with the source electrode of the third MOS tube, and the cathode of the first resistor is connected with the voltage output cathode; the grid electrode of the fifth MOS tube is connected with the first bias voltage, the source electrode of the fifth MOS tube is connected with the power supply, and the drain electrode of the fifth MOS tube is connected with the source electrode of the sixth MOS tube; the source electrode of the sixth MOS tube is the negative electrode of the input current, the grid electrode of the sixth MOS tube is grounded, and the drain electrode of the sixth MOS tube is connected with the drain electrode of the tenth MOS tube; the grid electrode of the tenth MOS tube is connected with the second bias voltage, and the source electrode of the tenth MOS tube is grounded; the source electrode of the fourth MOS tube is connected with the power supply, the grid electrode of the fourth MOS tube is connected with the drain electrode of the sixth MOS tube, the drain electrode of the fourth MOS tube is connected with the drain electrode of the ninth MOS tube, and the drain electrode of the fourth MOS tube is a voltage output anode; the grid electrode of the ninth MOS tube is connected with the second bias voltage, and the source electrode of the ninth MOS tube is grounded; the anode of the second resistor is connected with the source electrode of the sixth MOS tube, and the cathode of the second resistor is connected with the voltage output anode.
The first to sixth MOS transistors are PMOS transistors.
The seventh to tenth MOS transistors are NMOS transistors.
After the scheme is adopted, the amplifier structure provided by the invention consists of two stages of amplifiers, wherein the first stage is a common-gate amplifier structure, and the second stage is a common-source amplifier structure; the load impedance is bridged between the input end and the output end, so that low input impedance and low output impedance are ensured. Compared with the traditional trans-impedance amplifier based on the OTA structure, the structure can work under the power voltage as low as 0.6V, the common-gate amplifier at the input end can effectively reduce the input impedance at the high frequency, the current conversion efficiency is improved, and the influence of an out-of-band interference signal on the working point of the circuit is relieved.
The invention has the following effects:
(1) the amplifier reasonably distributes voltage margin through the self structure, so that the amplifier can work under lower power supply voltage;
(2) the amplifier is of a common-gate input structure, and the input impedance of the amplifier is lower, so that the in-band and out-of-band input impedances lower than that of an OTA trans-impedance amplifier can be realized, the current conversion efficiency is improved, and the influence of out-of-band interference on a circuit working point is inhibited.
Drawings
FIG. 1 is a circuit diagram of the present invention;
fig. 2 is a graph comparing the variation of input impedance with operating frequency of the present invention (solid line) to the input impedance of a transimpedance amplifier of a conventional OTA configuration (dashed line);
fig. 3 is a graph of the output impedance of the present invention as a function of operating frequency.
Detailed Description
The technical solution and the advantages of the present invention will be described in detail with reference to the accompanying drawings.
The invention provides a low-voltage low-output impedance trans-impedance amplifier, which comprises a first-stage common-gate tube and a second-stage common-source tube, wherein a load resistor is bridged between a source electrode of the first-stage common-gate tube and an output end of the second stage. The common-gate tube of the first stage is a P-type metal oxide metal tube (hereinafter referred to as PMOS tube), the source and the drain of the common-gate tube are respectively connected with a fixed current source, and the resistor connected across the source of the common-gate tube can play the roles of shunting mismatched current and stabilizing a direct-current working point. The grid electrode of the common grid tube is grounded so as to save voltage margin. The input tube of the second-stage common source amplifier is a PMOS tube, and the load tube is a current source formed by an N-type metal oxide metal tube (hereinafter referred to as NMOS tube).
As shown in fig. 1, a specific implementation structure of the present invention includes: first PMOS pipe, second PMOS pipe, third PMOS pipe, fourth PMOS pipe, fifth PMOS pipe, sixth PMOS pipe, first NMOS pipe, second NMOS pipe, third NMOS pipe, fourth NMOS pipe and first resistance R1, second resistance R2, wherein: the grid electrode of the first PMOS tube P1 is connected with a bias voltage 1, the source electrode of the P1 is connected with a power supply, and the drain electrode of the P1 is connected with the source electrode of the third PMOS tube P3; the source electrode of the P3 is an input current anode, the grid electrode of the P3 is grounded, and the drain electrode of the P3 is connected with the drain electrode of the first NMOS tube N1; the grid of N1 is connected with bias voltage 2, and the source of N1 is grounded; the source electrode of the second PMOS tube P2 is connected with a power supply, the grid electrode of P2 is connected with the drain electrode of P3, the drain electrode of P2 is connected with the drain electrode of the second NMOS tube N2, and the drain electrode of P2 is a voltage output negative electrode; the grid of N2 is connected with bias voltage 2, and the source of N2 is grounded; the anode of the first resistor R1 is connected with the source of the P3, and the cathode of the R1 is connected with the cathode of the voltage output; the grid electrode of the fifth PMOS tube P5 is connected with the bias voltage 1, the source electrode of the P5 is connected with the power supply, and the drain electrode of the P5 is connected with the source electrode of the sixth PMOS tube P6; the source electrode of the P6 is the negative electrode of the input current, the grid electrode of the P6 is grounded, and the drain electrode of the P6 is connected with the drain electrode of the fourth NMOS tube N4; the grid of N4 is connected with bias voltage 2, and the source of N4 is grounded; the source electrode of the fourth PMOS tube P4 is connected with a power supply, the grid electrode of P4 is connected with the drain electrode of P6, the drain electrode of P4 is connected with the drain electrode of the third NMOS tube N3, and the drain electrode of P4 is a voltage output positive electrode; the grid of N3 is connected with bias voltage 2, and the source of N3 is grounded; the anode of the second resistor R2 is connected with the source of P6, and the cathode of R2 is connected with the anode of the voltage output.
Fig. 2 is a graph showing the variation of the input impedance of the transimpedance amplifier according to the present invention with the operating frequency (solid line) in comparison with the input impedance of the transimpedance amplifier of the conventional OTA configuration (dotted line). Thanks to the low impedance characteristic of the input stage common-gate amplifier itself, the input impedance of the present invention is lower than that of an OTA architecture over the entire frequency range. The input impedance characteristic outside the loop bandwidth is much lower than that of the OTA structure, so that the suppression degree of the trans-impedance amplifier structure to the out-of-band interference is expected to be obviously improved.
As shown in fig. 3, which is a variation curve of the output impedance of the transimpedance amplifier according to the present invention with the operating frequency, it can be seen that the circuit can achieve an output impedance value within 200 ohms in the range of 10M, thanks to the higher loop gain.
In summary, the present invention provides a transimpedance amplifier with low output impedance which can operate at low supply voltage. The amplifier is of a fully differential structure, and the main idea is to realize higher loop gain by using a two-stage amplifier and realize lower input impedance and output impedance by combining with the cross-over resistors of input and output ends. The common-gate structure of the first stage can provide node impedance not higher than 1/gm in the whole frequency spectrum range while realizing lower input impedance in the band, and can effectively reduce voltage disturbance caused by out-of-band interference signals so as to stabilize a direct-current working point. The amplifier optimizes the circuit structure aiming at the application condition of low voltage, so that the power supply voltage of the whole circuit can be compressed to the sum of a grid source voltage and a drain source voltage, and the amplifier can work at the power supply voltage as low as 0.6V.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modifications made on the basis of the technical scheme according to the technical idea of the present invention fall within the protection scope of the present invention.

Claims (3)

1. A low voltage low output impedance transimpedance amplifier characterized by: the circuit comprises first to tenth MOS tubes, a first resistor and a second resistor, wherein the grid electrode of the first MOS tube is connected with a first bias voltage, the source electrode of the first MOS tube is connected with a power supply, and the drain electrode of the first MOS tube is connected with the source electrode of the third MOS tube; the source electrode of the third MOS tube is an input current anode, the grid electrode of the third MOS tube is grounded, and the drain electrode of the third MOS tube is connected with the drain electrode of the seventh MOS tube; the grid electrode of the seventh MOS tube is connected with the second bias voltage, and the source electrode of the seventh MOS tube is grounded; the source electrode of the second MOS tube is connected with a power supply, the grid electrode of the second MOS tube is connected with the drain electrode of the third MOS tube, the drain electrode of the second MOS tube is connected with the drain electrode of the eighth MOS tube, and the drain electrode of the second MOS tube is a voltage output cathode; the grid electrode of the eighth MOS tube is connected with the second bias voltage, and the source electrode of the eighth MOS tube is grounded; the anode of the first resistor is connected with the source electrode of the third MOS tube, and the cathode of the first resistor is connected with the voltage output cathode; the grid electrode of the fifth MOS tube is connected with the first bias voltage, the source electrode of the fifth MOS tube is connected with the power supply, and the drain electrode of the fifth MOS tube is connected with the source electrode of the sixth MOS tube; the source electrode of the sixth MOS tube is the negative electrode of the input current, the grid electrode of the sixth MOS tube is grounded, and the drain electrode of the sixth MOS tube is connected with the drain electrode of the tenth MOS tube; the grid electrode of the tenth MOS tube is connected with the second bias voltage, and the source electrode of the tenth MOS tube is grounded; the source electrode of the fourth MOS tube is connected with the power supply, the grid electrode of the fourth MOS tube is connected with the drain electrode of the sixth MOS tube, the drain electrode of the fourth MOS tube is connected with the drain electrode of the ninth MOS tube, and the drain electrode of the fourth MOS tube is a voltage output anode; the grid electrode of the ninth MOS tube is connected with the second bias voltage, and the source electrode of the ninth MOS tube is grounded; the anode of the second resistor is connected with the source electrode of the sixth MOS tube, and the cathode of the second resistor is connected with the voltage output anode.
2. A low voltage low output impedance transimpedance amplifier according to claim 1, characterized in that: the first MOS tube, the second MOS tube, the third MOS tube and the fourth MOS tube adopt PMOS tubes.
3. A low voltage low output impedance transimpedance amplifier according to claim 1, characterized in that: and the seventh to tenth MOS tubes adopt NMOS tubes.
CN201810324422.2A 2018-04-12 2018-04-12 Low-voltage low-output impedance trans-impedance amplifier Expired - Fee Related CN108667434B (en)

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CN113316895B (en) * 2019-11-25 2024-08-27 深圳市汇顶科技股份有限公司 Amplifying circuit
CN111697936B (en) * 2020-06-19 2023-08-25 东南大学 Low-power consumption complementary digital variable gain amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101807891A (en) * 2010-01-20 2010-08-18 南通大学 Front-end amplifier circuit based on magnetoelectric transducer made of relaxor ferroelectric material
US8654600B1 (en) * 2011-03-01 2014-02-18 Lattice Semiconductor Corporation Low-voltage current sense amplifier
CN106026948A (en) * 2016-05-16 2016-10-12 华南理工大学 CMOS trans-impedance amplifier having high capacitance driving and low power consumption

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7626460B2 (en) * 2007-10-30 2009-12-01 Raytheon Company Low noise, low power and high bandwidth capacitive feedback trans-impedance amplifier with differential FET input and bipolar emitter follower feedback

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101807891A (en) * 2010-01-20 2010-08-18 南通大学 Front-end amplifier circuit based on magnetoelectric transducer made of relaxor ferroelectric material
US8654600B1 (en) * 2011-03-01 2014-02-18 Lattice Semiconductor Corporation Low-voltage current sense amplifier
CN106026948A (en) * 2016-05-16 2016-10-12 华南理工大学 CMOS trans-impedance amplifier having high capacitance driving and low power consumption

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
155Mb/s光通信用CMOS自动增益控制跨阻前置放大器;韩鹏等;《电子学报》;20071115(第11期);第159-162页 *
Realization of Trans-impedance Amplifier for Particle Counting Chip;Jung-tang Huang等;《 2005 IEEE Asian Solid-State Circuits Conference》;20051103;第97-100页 *

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