CN108642462A - 一种制备Cu掺杂稀磁半导体薄膜的方法 - Google Patents

一种制备Cu掺杂稀磁半导体薄膜的方法 Download PDF

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CN108642462A
CN108642462A CN201810560499.XA CN201810560499A CN108642462A CN 108642462 A CN108642462 A CN 108642462A CN 201810560499 A CN201810560499 A CN 201810560499A CN 108642462 A CN108642462 A CN 108642462A
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substrate
doping
conductor thin
films
magnetron sputtering
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沈洪雪
姚婷婷
杨勇
李刚
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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Abstract

本发明公开一种制备Cu掺杂稀磁半导体薄膜的方法，包括以下步骤：S1、清洗衬底，去除衬底表面油污和杂质；S2、采用离子束沉积设备与磁控溅射设备，衬底置于离子束沉积设备的真空腔室内，通过离子束在衬底表面沉积Cu层；S3、沉积有Cu层的衬底转入磁控溅射设备的真空腔室内，采用Al靶为溅射靶材，工作气体Ar，反应气体N2，在Cu层表面溅镀AlN层，得到复合薄膜；S4、加热磁控溅射设备放置衬底的样品台至500℃，对步骤S3得到的复合薄膜退火处理，最终得到Cu掺杂稀磁半导体薄膜；本方法工艺简单，可控性、操作性强；利用样品台加热系统对样品进行加热，达到对掺杂Cu进行在薄膜中进行再均匀化分布的作用，同时可以提高整个薄膜的结晶质量。

Description

一种制备Cu掺杂稀磁半导体薄膜的方法
技术领域
本发明涉及功能薄膜技术领域，具体是一种制备Cu掺杂稀磁半导体薄膜的方法。
背景技术
稀磁半导体（Diluted magnetic semiconductors, DMS）是指非磁性半导体中的部分原子被过渡金属元素（transition metals, TM）取代后形成的磁性半导体。因为一般掺入的杂质浓度不高，磁性比较弱，因而叫做稀磁半导体，或者半磁半导体。因兼具有半导体和磁性的性质，即在一种材料中同时应用电子电荷和自旋两种自由度，因而引起科研工作者的广泛关注，目前尚处于研究阶段。
发明内容
本发明的目的在于提供一种制备Cu掺杂稀磁半导体薄膜的方法，该方法能够得到符合要求的稀磁半导体薄膜，工艺简单、易于控制。
本发明解决其技术问题所采用的技术方案是：
一种制备Cu掺杂稀磁半导体薄膜的方法，包括以下步骤：
S1、清洗衬底，去除衬底表面油污和杂质；
S2、采用离子束沉积设备与磁控溅射设备，衬底置于离子束沉积设备的真空腔室内，通过离子束在衬底表面沉积Cu层；
S3、沉积有Cu层的衬底转入磁控溅射设备的真空腔室内，采用Al靶为溅射靶材，工作气体Ar，反应气体N2，在Cu层表面溅镀AlN层，得到复合薄膜；
S4、加热磁控溅射设备放置衬底的样品台至500℃，对步骤S3得到的复合薄膜退火处理，最终得到Cu掺杂稀磁半导体薄膜。
进一步的，步骤S2的Cu层厚度为10nm。
进一步的，步骤S3磁控溅射时，Al靶同时采用直流电源与射频电源，Al靶直流功率80W、射频功率70W，工作气压0.6Pa,Ar流量15sccm，N2流量8sccm，溅射时间30min。
进一步的，步骤S4退火时间2小时。
本发明的有益效果是，离子束沉积设备进行掺杂层Cu的制备，工艺简单，所得薄膜致密度高；磁控溅射镀制AlN薄膜，直流与射频电源配合，所得AlN致密，质量高，且工艺非常简单，可控性、操作性强；利用样品台加热系统对样品进行加热，达到对掺杂Cu进行在薄膜中进行再均匀化分布的作用，同时可以提高整个薄膜的结晶质量。
具体实施方式
本发明提供一种制备Cu掺杂稀磁半导体薄膜的方法，包括以下步骤：
S1、清洗衬底，去除衬底表面油污和杂质；衬底可采用普通的玻璃衬底；
S2、采用离子束沉积设备与磁控溅射设备，衬底置于离子束沉积设备的真空腔室内，通过离子束在衬底表面沉积厚度为10nm的Cu层；
S3、沉积有Cu层的衬底转入磁控溅射设备的真空腔室内，采用Al靶为溅射靶材，工作气体Ar，反应气体N2，Al靶同时采用直流电源与射频电源，Al靶直流功率80W、射频功率70W，工作气压0.6Pa,Ar流量15sccm，N2流量8sccm，溅射时间30min，在Cu层表面溅镀AlN层，得到复合薄膜；
S4、加热磁控溅射设备放置衬底的样品台至500℃，对步骤S3得到的复合薄膜退火处理2小时，最终得到Cu掺杂稀磁半导体薄膜。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (4)

1.一种制备Cu掺杂稀磁半导体薄膜的方法，其特征在于，包括以下步骤：
S1、清洗衬底，去除衬底表面油污和杂质；
S2、采用离子束沉积设备与磁控溅射设备，衬底置于离子束沉积设备的真空腔室内，通过离子束在衬底表面沉积Cu层；
S3、沉积有Cu层的衬底转入磁控溅射设备的真空腔室内，采用Al靶为溅射靶材，工作气体Ar，反应气体N2，在Cu层表面溅镀AlN层，得到复合薄膜；
S4、加热磁控溅射设备放置衬底的样品台至500℃，对步骤S3得到的复合薄膜退火处理，最终得到Cu掺杂稀磁半导体薄膜。
2.根据权利要求1所述的一种制备Cu掺杂稀磁半导体薄膜的方法，其特征在于，步骤S2的Cu层厚度为10nm。
3.根据权利要求1所述的一种制备Cu掺杂稀磁半导体薄膜的方法，其特征在于，步骤S3磁控溅射时，Al靶同时采用直流电源与射频电源，Al靶直流功率80W、射频功率70W，工作气压0.6Pa,Ar流量15sccm，N2流量8sccm，溅射时间30min。
4.根据权利要求1所述的一种制备Cu掺杂稀磁半导体薄膜的方法，其特征在于，步骤S4退火时间2小时。
CN201810560499.XA 2018-06-04 2018-06-04 一种制备Cu掺杂稀磁半导体薄膜的方法 Withdrawn CN108642462A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101736292A (zh) * 2008-11-19 2010-06-16 中国科学院沈阳科学仪器研制中心有限公司 一种磁控与离子束复合溅射沉积系统
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Publication number Priority date Publication date Assignee Title
CN101736292A (zh) * 2008-11-19 2010-06-16 中国科学院沈阳科学仪器研制中心有限公司 一种磁控与离子束复合溅射沉积系统
CN103219472A (zh) * 2013-04-19 2013-07-24 云南北方奥雷德光电科技股份有限公司 顶部发光oled器件阳极结构及其制备工艺
CN103334083A (zh) * 2013-06-19 2013-10-02 湖北大学 一种Mg掺杂AlN基稀磁半导体薄膜的制备方法

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J.T. LUO等: ""Enhancement of room temperature ferromagnetism in Cu-doped AlN thin film by defect engineering"", 《JOURNAL OF ALLOYS AND COMPOUNDS》 *
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