CN108754420A - 一种制备Cu掺杂AlN稀磁半导体薄膜的方法 - Google Patents

一种制备Cu掺杂AlN稀磁半导体薄膜的方法 Download PDF

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CN108754420A
CN108754420A CN201810560532.9A CN201810560532A CN108754420A CN 108754420 A CN108754420 A CN 108754420A CN 201810560532 A CN201810560532 A CN 201810560532A CN 108754420 A CN108754420 A CN 108754420A
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film
aln
substrate
films
vacuum
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彭寿
沈洪雪
姚婷婷
杨勇
李刚
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明公开一种制备Cu掺杂AlN稀磁半导体薄膜的方法，包括：S1、采用具有绒面结构的玻璃作为衬底；S2、采用真空蒸镀设备与磁控溅射设备，将衬底置于真空蒸镀设备的腔体内，在衬底的绒面蒸镀Cu膜层；S3、将衬底转入磁控溅射设备的真空腔体内，以Al靶为溅射靶材，N2为反应气体，通入氩气，在Cu膜层表面溅镀AlN膜层，得到复合薄膜；S4、将复合薄膜置于真空退火炉中，在400℃的温度下退火2小时，得到Cu掺杂AlN稀磁半导体薄膜；蒸发室真空度高，蒸发得到的Cu膜质量好，纯度高；磁控溅射镀制AlN薄膜，工艺非常简单，可控性、操作性强；真空退火，达到对掺杂Cu在薄膜中进行再均匀化分布的作用，同时可以提高整个薄膜的结晶质量。

Description

一种制备Cu掺杂AlN稀磁半导体薄膜的方法
技术领域
本发明涉及一种制备Cu掺杂AlN稀磁半导体薄膜的方法。
背景技术
近年来，稀磁半导体作为一个新型的领域，其关注度越来越高，特别是作为稀磁半导体材料本身的物理内涵和其在自旋电子领域的运用程度。AlN作为目前在氮化物中禁带最宽的一种半导体材料，其本身的物理性能以及在光电，电学，高硬度等方面的优异表现，再加上如果对其进行合适掺杂，能有望成为具有较高载流子浓度，较高的居里温度稀磁半导体材料。如何制备符合要求的AlN稀磁半导体即成为重要的研究课题。
发明内容
本发明的目的在于提供一种制备Cu掺杂AlN稀磁半导体薄膜的方法，该方法工艺简单、可控性强，能够制备得到符合要求的Cu掺杂AlN稀磁半导体薄膜。
本发明解决其技术问题所采用的技术方案是：
一种制备Cu掺杂AlN稀磁半导体薄膜的方法，包括：
S1、采用具有绒面结构的玻璃作为衬底；
S2、采用真空蒸镀设备与磁控溅射设备，将衬底置于真空蒸镀设备的腔体内，在衬底的绒面蒸镀Cu膜层；
S3、将衬底转入磁控溅射设备的真空腔体内，以Al靶为溅射靶材，N2为反应气体，通入氩气，在Cu膜层表面溅镀AlN膜层，得到复合薄膜；
S4、将复合薄膜置于真空退火炉中，在400℃的温度下退火2小时，得到Cu掺杂AlN稀磁半导体薄膜。
本发明的有益效果是，蒸发室真空度高，蒸发得到的Cu膜质量好，纯度高；磁控溅射镀制AlN薄膜，工艺非常简单，可控性、操作性强；真空退火，达到对掺杂Cu在薄膜中进行再均匀化分布的作用，同时可以提高整个薄膜的结晶质量。
具体实施方式
本发明提供一种制备Cu掺杂AlN稀磁半导体薄膜的方法，包括：
S1、采用具有绒面结构的玻璃作为衬底；
S2、采用真空蒸镀设备与磁控溅射设备，将衬底置于真空蒸镀设备的腔体内，开启真空蒸镀设备，当真空度达到5.0*10－6Pa时，进行Cu膜的蒸镀，蒸镀时间3min，在衬底的绒面蒸镀厚度为20nm的 Cu膜层；
S3、将衬底转入磁控溅射设备的真空腔体内，以Al靶为溅射靶材，N2为反应气体，真空度达到5.0*10－4Pa时，通入氩气，设定Al靶功率100W，工作气压0.5Pa，Ar流量25sccm，N2流量为10sccm，溅射时间30min，在Cu膜层表面溅镀厚度为50nm的 AlN膜层，得到复合薄膜；
S4、将复合薄膜置于真空退火炉中，在400℃的温度下退火2小时，得到Cu掺杂AlN稀磁半导体薄膜。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (1)

1.一种制备Cu掺杂AlN稀磁半导体薄膜的方法，其特征在于，包括：
S1、采用具有绒面结构的玻璃作为衬底；
S2、采用真空蒸镀设备与磁控溅射设备，将衬底置于真空蒸镀设备的腔体内，在衬底的绒面蒸镀Cu膜层；
S3、将衬底转入磁控溅射设备的真空腔体内，以Al靶为溅射靶材，N2为反应气体，通入氩气，在Cu膜层表面溅镀AlN膜层，得到复合薄膜；
S4、将复合薄膜置于真空退火炉中，在400℃的温度下退火2小时，得到Cu掺杂AlN稀磁半导体薄膜。
CN201810560532.9A 2018-06-04 2018-06-04 一种制备Cu掺杂AlN稀磁半导体薄膜的方法 Pending CN108754420A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109355626A (zh) * 2018-11-08 2019-02-19 北方民族大学 一种Ca掺杂MgO形成的复合薄膜的制备方法
CN110212065A (zh) * 2019-06-11 2019-09-06 厦门乾照光电股份有限公司 一种pvd溅射设备、led器件及其制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103334083A (zh) * 2013-06-19 2013-10-02 湖北大学 一种Mg掺杂AlN基稀磁半导体薄膜的制备方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103334083A (zh) * 2013-06-19 2013-10-02 湖北大学 一种Mg掺杂AlN基稀磁半导体薄膜的制备方法

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Title
柯兴宇 等: ""热处理对稀磁半导体Al1－xCuxN薄膜性能的影响"", 《人工晶体学报》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109355626A (zh) * 2018-11-08 2019-02-19 北方民族大学 一种Ca掺杂MgO形成的复合薄膜的制备方法
CN110212065A (zh) * 2019-06-11 2019-09-06 厦门乾照光电股份有限公司 一种pvd溅射设备、led器件及其制作方法

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Application publication date: 20181106