CN108565259A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN108565259A CN108565259A CN201810304765.2A CN201810304765A CN108565259A CN 108565259 A CN108565259 A CN 108565259A CN 201810304765 A CN201810304765 A CN 201810304765A CN 108565259 A CN108565259 A CN 108565259A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 128
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 17
- 230000003071 parasitic effect Effects 0.000 abstract description 13
- 230000001052 transient effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 238000000137 annealing Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 230000003213 activating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 230000008901 benefit Effects 0.000 description 1
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- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810304765.2A CN108565259B (zh) | 2018-04-08 | 2018-04-08 | 半导体器件及其制造方法 |
Applications Claiming Priority (1)
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CN201810304765.2A CN108565259B (zh) | 2018-04-08 | 2018-04-08 | 半导体器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN108565259A true CN108565259A (zh) | 2018-09-21 |
CN108565259B CN108565259B (zh) | 2022-03-01 |
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CN201810304765.2A Active CN108565259B (zh) | 2018-04-08 | 2018-04-08 | 半导体器件及其制造方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114582859A (zh) * | 2022-05-05 | 2022-06-03 | 微龛(广州)半导体有限公司 | 用于薄膜晶体管的esd防护器件结构及制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103474346A (zh) * | 2012-06-08 | 2013-12-25 | 上海华虹Nec电子有限公司 | 瞬变电压抑制二极管pn结的实现方法 |
CN103579366A (zh) * | 2012-08-03 | 2014-02-12 | 上海华虹Nec电子有限公司 | Tvs器件及制造方法 |
US20150115317A1 (en) * | 2012-03-19 | 2015-04-30 | Analog Devices, Inc. | Protection devices for precision mixed-signal electronic circuits and methods of forming the same |
CN105489612A (zh) * | 2015-12-07 | 2016-04-13 | 上海长园维安微电子有限公司 | 基于soi基底的低漏电低电容tvs阵列及其制备方法 |
CN106098792A (zh) * | 2016-08-27 | 2016-11-09 | 上海长园维安微电子有限公司 | 双向电压完全对称带有超深沟槽超低漏电的tvs器件及制法 |
CN106129058A (zh) * | 2016-08-27 | 2016-11-16 | 上海长园维安微电子有限公司 | 沟槽引出集成型低压双向瞬时电压抑制器及其制造方法 |
CN106449633A (zh) * | 2016-09-23 | 2017-02-22 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
-
2018
- 2018-04-08 CN CN201810304765.2A patent/CN108565259B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150115317A1 (en) * | 2012-03-19 | 2015-04-30 | Analog Devices, Inc. | Protection devices for precision mixed-signal electronic circuits and methods of forming the same |
CN103474346A (zh) * | 2012-06-08 | 2013-12-25 | 上海华虹Nec电子有限公司 | 瞬变电压抑制二极管pn结的实现方法 |
CN103579366A (zh) * | 2012-08-03 | 2014-02-12 | 上海华虹Nec电子有限公司 | Tvs器件及制造方法 |
CN105489612A (zh) * | 2015-12-07 | 2016-04-13 | 上海长园维安微电子有限公司 | 基于soi基底的低漏电低电容tvs阵列及其制备方法 |
CN106098792A (zh) * | 2016-08-27 | 2016-11-09 | 上海长园维安微电子有限公司 | 双向电压完全对称带有超深沟槽超低漏电的tvs器件及制法 |
CN106129058A (zh) * | 2016-08-27 | 2016-11-16 | 上海长园维安微电子有限公司 | 沟槽引出集成型低压双向瞬时电压抑制器及其制造方法 |
CN106449633A (zh) * | 2016-09-23 | 2017-02-22 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114582859A (zh) * | 2022-05-05 | 2022-06-03 | 微龛(广州)半导体有限公司 | 用于薄膜晶体管的esd防护器件结构及制备方法 |
CN114582859B (zh) * | 2022-05-05 | 2022-07-05 | 微龛(广州)半导体有限公司 | 用于薄膜晶体管的esd防护器件结构及制备方法 |
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CN108565259B (zh) | 2022-03-01 |
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Address after: 310051 No. 6 Lianhui Street, Xixing Street, Binjiang District, Hangzhou City, Zhejiang Province Applicant after: Silergy Semiconductor Technology (Hangzhou ) Co., Ltd. Address before: Room A1501-A1505 and A1509-A1511, 71 Building No. 90 Wensan Road, Xihu District, Hangzhou City, Zhejiang Province, 310012 Applicant before: Silergy Semiconductor Technology (Hangzhou ) Co., Ltd. |
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Effective date of registration: 20200305 Address after: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Applicant after: Silergy Semiconductor Technology (Hangzhou) Ltd. Address before: 310051 No. 6 Lianhui Street, Xixing Street, Binjiang District, Hangzhou City, Zhejiang Province Applicant before: Silergy Semiconductor Technology (Hangzhou) Ltd. |
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Address after: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Applicant after: Nanjing Sili Microelectronics Technology Co., Ltd Address before: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Applicant before: Silergy Semiconductor Technology (Hangzhou) Ltd. |
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