CN108475661B - 微发光二极管显示装置及其制造方法 - Google Patents

微发光二极管显示装置及其制造方法 Download PDF

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CN108475661B
CN108475661B CN201780003751.0A CN201780003751A CN108475661B CN 108475661 B CN108475661 B CN 108475661B CN 201780003751 A CN201780003751 A CN 201780003751A CN 108475661 B CN108475661 B CN 108475661B
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陈培炫
邹泉波
冯向旭
甘桃
张笑阳
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Abstract

公开了微发光二极管显示装置及其制造方法。所述方法包括：在载体基底上形成微发光二极管，其中，载体基底对于在激光剥离中使用的激光是透明的；以保持材料填充载体基底上的微发光二极管之间的沟槽；在选定的微发光二极管上执行激光剥离，以将选定的微发光二极管从载体基底剥离，其中，选定的微发光二极管通过保持材料保持在载体基底上；将选定的微发光二极管粘结到微发光二极管显示装置的接收基底上；且将选定的微发光二极管从载体基底分离，以将选定的微发光二极管转移到接收基底。

Description

微发光二极管显示装置及其制造方法
技术领域
本发明涉及微发光二极管显示的技术领域，且更特别地涉及制造微发光二极管显示装置的方法和微发光二极管显示装置。
背景技术
微发光二极管技术指以高密度集成在基底上的小尺寸的LED阵列。随着微发光二极管技术的发展，在工业中期望的是高质量的微发光二极管产品可以进入市场。高质量的微发光二极管将对已经在市场中的诸如LCD/OLED的传统显示产品产生深远影响。
在制造微发光二极管的过程中，微发光二极管阵列首先形成在载体基底上。载体基底可以是生长基底或中间基底。然后，微发光二极管阵列转移到显示装置的接收基底。接收基底可以是显示屏或显示面板等。显示装置能够在电子设备中使用，所述电子设备诸如是增强现实装置或虚拟现实装置中的微型显示器、手表、手机、电视等。
在现有技术中，微发光二极管阵列能够通过激光剥离(LLO)从一个基底转移到另一基底。图1示出现有技术中的通过激光剥离将微发光二极管从载体基底转移到显示装置的接收基底的过程。
如图1所示，微发光二极管102形成在载体基底101上。微发光二极管102在顶部上可以具有P-金属。例如，载体基底101可以是蓝宝石基底。概括而言，蓝色或绿色微发光二极管能够在蓝宝石基底101上生长，而红色微发光二极管能够从GaAs基底转移到蓝宝石基底101。在这种情况下，用于剥离的激光可以具有大约248nm的波长。可选的，载体基底101可以是GaAs基底，且红色微发光二极管能够在载体基底上生长。在这种情况下，用于剥离的激光可以具有大约1064nm的波长。
微发光二极管102经由微型隆起103粘结在接收基底107上。微型隆起103布置在TFT电路层106的顶部上的诸如是阳极的电极104上。例如，TFT电路层106由聚酰亚胺层105覆盖以保护TFT电路。微型隆起103由聚酰亚胺层105分开。
激光108从载体基底101侧照射在选定的微发光二极管102上，以执行激光剥离。
如图1所示，发明人发现，在激光剥离的情况下存在微发光二极管102中有裂缝109的风险。微发光二极管的裂缝与激光剥离期间分布在微发光二极管上的非均匀应变有关。微发光二极管上的非均匀应变可归因于显示装置的接收基底的粗糙表面、微发光二极管基底和接收基底上的微型隆起之间的未对准等。裂缝将引起转移时的成品率损失。
因此，在本领域中需要的是，提出在制造微发光二极管显示装置期间转移微发光二极管的新的解决方案，以处理现有技术中的问题中的至少其一。
发明内容
本发明的一个目的是提供在制造微发光二极管显示装置期间转移微发光二极管的新的技术解决方案。
根据本发明的第一方面，提供了一种制造微发光二极管显示装置的方法，包括：在载体基底上形成微发光二极管，其中，载体基底对于在激光剥离中使用的激光是透明的；以保持材料填充载体基底上的微发光二极管之间的沟槽；在选定的微发光二极管上执行激光剥离，以将选定的微发光二极管从载体基底剥离，其中，选定的微发光二极管通过保持材料保持在载体基底上；将选定的微发光二极管粘结到微发光二极管显示装置的接收基底上；并且将选定的微发光二极管与载体基底分离，以将选定的微发光二极管转移到接收基底。
替换地或可选地，所述方法还包括：在执行激光剥离之前将保持材料的厚度减小到低于微发光二极管的厚度。
替换地或可选地，载体基底是蓝宝石基底，且微发光二极管是蓝色微发光二极管或绿色微发光二极管。
替换地或可选地，载体基底是GaAs基底，且微发光二极管是红色微发光二极管。
替换地或可选地，保持材料包括光刻胶、胶、聚合物、硅树脂、或油脂中的至少其一。
替换地或可选地，通过加热保持材料将选定的微发光二极管从载体基底分离。
替换地或可选地，保持材料是光刻胶且在选定的微发光二极管粘结到接收基底上之后被移除。
替换地或可选地，通过移除保持材料且通过将载体基底与接收基底分离而将选定的微发光二极管从载体基底分离。
替换地或可选地，借助于加热而后冷却载体基底和接收基底而将选定的微发光二极管从载体基底分离。
替换地或可选地，保持材料是光刻胶且在将选定的微发光二极管粘结到接收基底上之后被移除。
替换地或可选地，通过移除保持材料将选定的微发光二极管从载体基底分离。
根据本发明的第二方面，提供微发光二极管显示装置，通过利用根据任何实施例的制造微发光二极管显示装置的方法来制造所述微发光二极管显示装置。
根据本申请的一实施例，能够减小在转移期间微发光二极管的裂缝。
通过以下参考附图对根据本发明的示例性实施例的详细描述，本发明的其他特征及其优点将变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1示意性示出现有技术中的激光剥离处理。
图2-6示意性示出根据第一实施例的转移微发光二极管的过程。
图7-11示意性示出根据第二实施例的转移微发光二极管的过程。
图12示意性示出电子设备，其能够使用根据本申请的一实施例制造的微发光二极管显示装置。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其他例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
将参考附图描述实施例和示例。本领域技术人员将理解的是，以下说明将集中于与现有技术不同的特征。所以，能够以现有技术的方式实施本说明书中未描述或未详细描述的处理。
图2-6示意性示出根据第一实施例的转移微发光二极管的过程。
如图2所示，微发光二极管202形成在载体基底201上。载体基底202对于在激光剥离中使用的激光是透明的。例如，激光可以具有大约248nm的波长。载体基底可以是蓝宝石基底，且微发光二极管是蓝色微发光二极管或绿色微发光二极管。可替换地，红色微发光二极管能够预先从生长基底转移到载体基底201。在另一示例中，激光可以具有大约1064nm的波长。载体基底201可以是GaAs基底且红色微发光二极管可以在基底上生长。
在图2中，载体基底201上的微发光二极管202之间的沟槽被保持材料209填充。
保持材料209将在激光剥离之后临时保持微发光二极管。例如，保持材料可以包括光刻胶、胶、聚合物、硅树脂、或油脂中的至少其一。
例如，在保持材料209是光刻胶的情况下，光刻胶能够旋涂到微发光二极管202和载体基底201上。
在图3中，减小保持材料210的厚度以使得其适于与接收基底粘结。
在图4中，在选定的微发光二极管202上执行激光剥离，以将选定的微发光二极管从载体基底201剥离。选定的微发光二极管202通过保持材料210保持在载体基底201上。
在此，保持材料将在激光剥离期间使得一定程度的应变释放。由于在激光剥离期间在微发光二极管上的更均匀的应变分布，微发光二极管将具有更少的裂缝损失。可以消除粗糙接收基底或微发光二极管和接收基底上的微型隆起之间的未对准对微发光二极管的影响。
因此，在激光剥离期间裂缝损失将更少。因此，可以实现更高的从载体基底到接收基底的转移成品率。
从图4能够看见，激光208从载体基底201侧照射。激光可以具有用于蓝宝石基底的大约248nm的波长或用于GaAs基底的大约1064nm的波长。如由附图标记211指示的，选定的微发光二极管202被剥离。
如图5所示，选定的微发光二极管202粘结到微发光二极管显示装置(未示出)的接收基底207上。
例如，微发光二极管202经由微型隆起203与电极204粘结。电极204在接收基底207的薄膜晶体管(TFT)电路层206的顶部上。微型隆起的材料包括但不限于In、Sn、其他金属、合金、或导电粘合剂或抗蚀剂。微型隆起203由聚酰亚胺层205分离。
如图6所示，保持材料210是光刻胶且将在选定的微发光二极管202粘结到接收基底207上之后被移除。在一示例中，通过移除光刻胶210且通过将载体基底201与接收基底207分离而将选定的微发光二极管202从载体基底207分离。
在保持材料是光刻胶的情况下，光刻胶能够通过丙酮、抗蚀剂剥除等移除。而且，能够在微发光二极管202从载体基底201分离之前或之后移除光刻胶。
例如，选定的微发光二极管202从载体基底201转移到接收基底207。例如，通过加热而后冷却载体基底201和接收基底207将选定的微发光二极管202从载体基底201分离。保持材料210、微发光二极管202、载体基底201、和接收基底207具有不同的热膨胀系数，因此可以容易地分离微发光二极管202。
在以上实施例中，在执行激光剥离之前，保持材料209/210的厚度被减小到低于微发光二极管的厚度。在第二实施例中，在执行激光剥离之后，保持材料的厚度将被减小到低于微发光二极管的厚度。图7-11示意性示出根据第二实施例的转移微发光二极管的过程。可以省略第二实施例的与第一实施例类似的部分。
如图7所示，微发光二极管302形成在载体基底301上。载体基底301上的微发光二极管302之间的沟槽被保持材料309填充。保持材料309的厚度大于微发光二极管302的厚度。
在图8中，在选定的微发光二极管302上执行激光剥离，以将选定的微发光二极管从载体基底301剥离。选定的微发光二极管302通过保持材料309保持在载体基底301上。从图8能够看见，激光308从载体基底301侧照射。如附图标记311所示，选定的微发光二极管302被剥离。
在图9中，减小保持材料310的厚度以使得其适于与接收基底粘结。
如图10所示，选定的微发光二极管302粘结到微发光二极管显示装置(未示出)的接收基底307上。例如，微发光二极管302经由微型隆起303与电极304粘结。电极304在接收基底307的薄膜晶体管(TFT)电路层306的顶部上。微型隆起303由聚酰亚胺层305分离。
如图11所示，选定的微发光二极管302从载体基底分离301，以将选定的微发光二极管转移到接收基底307。
能够在制造微发光二极管显示装置的过程中采用以上微发光二极管转移处理。例如，制造微发光二极管显示装置的过程包括通过利用以上微发光二极管转移处理将微发光二极管从载体基底转移到显示装置的接收基底。显示装置例如可以是显示屏或显示面板。
如此制造的微发光二极管显示装置能够在增强现实装置或虚拟现实装置中的微型显示器、手表、手机、电视等中使用。
图12示意性示出电子设备，其能够使用根据本申请的一实施例制造的微发光二极管显示装置。如图12所示，电子设备410包括能够向用户显示信息的显示装置420。显示装置420可以是如上制造的微发光二极管显示装置。
虽然已经通过示例详细阐述本发明的一些特定实施例，但是本领域技术人员将理解到上述示例仅旨在是示意性的而非限制本发明的范围。

Claims (8)

1.一种制造微发光二极管显示装置的方法，包括：
在载体基底上形成微发光二极管，其中，载体基底对于在激光剥离中使用的激光是透明的；
以保持材料填充载体基底上的微发光二极管之间的沟槽；
在选定的微发光二极管上执行激光剥离，以将选定的微发光二极管从载体基底剥离，其中，选定的微发光二极管通过保持材料保持在载体基底上；
将选定的微发光二极管粘结到微发光二极管显示装置的接收基底上；并且
将选定的微发光二极管从载体基底分离，以将选定的微发光二极管转移到接收基底；
在执行激光剥离之前或在执行激光剥离之后将保持材料的厚度减小到低于微发光二极管的厚度。
2.根据权利要求1所述的方法，其中，载体基底是蓝宝石基底，且微发光二极管是蓝色微发光二极管或绿色微发光二极管。
3.根据权利要求1-2任一所述的方法，其中，载体基底是GaAs基底，且微发光二极管是红色微发光二极管。
4.根据权利要求1所述的方法，其中，保持材料包括光刻胶、硅树脂或油脂中的至少其一。
5.根据权利要求4所述的方法，其中，保持材料是光刻胶且在将选定的微发光二极管粘结到接收基底上之后被移除。
6.根据权利要求5所述的方法，其中，通过移除保持材料且通过将载体基底与接收基底分离而将选定的微发光二极管从载体基底分离。
7.根据权利要求6所述的方法，其中，借助于加热而后冷却载体基底和接收基底而将选定的微发光二极管从载体基底分离。
8.一种微发光二极管显示装置，其通过利用根据权利要求1-7任一所述的制造微发光二极管显示装置的方法来制造。
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