CN110379761B - 微发光二极管转移基板及装置 - Google Patents

微发光二极管转移基板及装置 Download PDF

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CN110379761B
CN110379761B CN201910651165.8A CN201910651165A CN110379761B CN 110379761 B CN110379761 B CN 110379761B CN 201910651165 A CN201910651165 A CN 201910651165A CN 110379761 B CN110379761 B CN 110379761B
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electrode
emitting diode
transfer
micro light
substrate
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CN110379761A (zh
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孙含嫣
刘东琦
郑辉
杨啸剑
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Abstract

本发明提供一种微发光二极管转移基板及装置，属于显示技术领域，其可解决现有的微发光二极管元件巨量转移普遍精确度不高的问题。本发明的微发光二极管转移基板，包括：基底，具有间隔设置多个基座；基座，用于承载待进行转移的微发光二极管；调距单元，设置在两相邻基座之间，用于调整基座之间的距离。

Description

微发光二极管转移基板及装置
技术领域
本发明属于显示技术领域，具体涉及一种微发光二极管转移基板及装置。
背景技术
微发光二极管(micro light emitting diode，Micro–LED)显示技术是将传统的显示器件进行微小化和矩阵化，并采用集成电路工艺制成驱动电路，以实现每一个像素点定址控制和单独驱动的显示技术。由于其亮度、寿命、对比度、反应时间、能耗、可视角度和分辨率等各种指标均由于传统的显示技术。并且其属于自发光、结构简单、体积小以及节能的优点，被视为下一代显示技术。
目前制作Micro-LED显示面板的过程中，首先在转移基板上形成微发光二极管，再将巨量的微发光二极管转移至接收基板，实现微发光二极管的巨量转移。
发明人发现现有技术中至少存在如下问题：现有的微发光二极管元件巨量转移普遍精确度不高，微发光二极管元件之间的间距较大，不能满足巨量转移对高精确度的要求。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提供一种微发光二极管转移基板及装置。
解决本发明技术问题所采用的技术方案是一种微发光二极管转移基板，该微发光二极管转移基板包括：
基底，具有间隔设置多个基座；所述基座，用于承载待进行转移的微发光二极管；
调距单元，设置在两相邻所述基座之间，用于调整所述基座之间的距离。
可选地，所述调距单元，包括：相对设置的第一起电结构和第二起电结构；其中，
所述第一起电结构和所述第二起电结构的两端分别连接两相邻的所述基座，且二者在外力的作用下发生形变，并能够在相互接触时产生不同极性的电荷。
可选地，所述第一起电结构包括：第一电极，设置在所述第一电极上的第一薄膜层；
所述第二起电结构包括：与所述第一电极相对设置的第二电极，设置在所述第二电极靠近所述第一电极的侧面上的第二薄膜层；其中，
所述第一薄膜层和所述第二薄膜层的介电常数不同。
可选地，在所述基座上设置有转移电极；其中，
所述转移电极与所述第一电极电连接。
可选地，所述转移电极与所述第一电极为一体式结构。
可选地，所述转移电极的材料包括：铜。
可选地，所述第一薄膜层的材料包括聚酰亚胺；所述第二薄膜层的材料包括聚对苯二甲酸乙二醇酯。
可选地，所述基座与待进行转移的所述微发光二极管一一对应。
解决本发明技术问题所采用的技术方案是一种微发光二极管转移装置，该微发光二极管转移装置上述提供的微发光二极管转移基板。
可选地，该微光二极管转移装置还包括推动模块，与所述调距单元连接，用于为所述调距单元施加外力，以使所述调距单元对所述基座之间的距离进行调整。
附图说明
图1a、图1b、图3a和图3b为本发明实施例提供的一种微发光二极管转移基板的侧视结构示意图；
图2a和图2b为本发明实施例提供的一种微发光二极管转移基板的俯视结构示意图。
其中附图标记为：101-基底、102-调距单元、103-第一起电结构、104-第二起电结构、105-转移电极、1011-基座、1031-第一电极、1032-第一薄膜层、1041-第二电极、及1042-第二薄膜层。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例一
本发明实施例提供了一种微发光二极管转移基板，可以用于微发光二极管显示面板制作过程中的微发光二极管的巨量转移，图1a和图1b为本发明实施例提供的一种微发光二极管转移基板的侧视结构示意图，如图1a和图1b所示，本发明实施例提供的微发光二极管转移基板包括：基底101和调距单元102。基底101具有间隔设置多个基座1011；基座1011用于承载待进行转移的微发光二极管；调距单元102设置在两相邻基座1011之间，用于调整基座1011之间的距离。
本发明实施例提供的微发光二极管转移基板，在初始状态时，通过施加外力使得设置在两个基座1011之间调距单元102处于伸展状态，从而使得相邻的两个基座1011之间的距离处于最大距离。在实际应用中，相邻的两个基座1011之间的最大距离可以为现有技术中相邻的两个待进行转移的微发光二极管之间可以达到的距离。然后，利用沉积方式，在基底101的基座1011位置上对应制作微发光二极管，形成巨量的呈矩阵式排列的微发光二极管。微发光二极管制作完成后，通过施加外力使得设置在两个基座1011之间的调距单元102收缩至一定程度，从而使得相邻的两个基座1011之间的距离缩短至最小，进而使得在基座1011上的微发光二极管之间的距离缩短。最后，将基座1011上的待进行转移的微发光二极管进行转移。图2a和图2b为本发明实施例提供的一种微发光二极管转移基板的俯视结构示意图，由图2a和图2b可以看出，本发明实施例提供的微发光二极管转移基板，通过调距单元102可以缩短相邻的基座1011之间的距离，从而缩短待进行转移的微发光二极管之间的距离，进而提高微发光二极管巨量转移的精确度，实现微发光二极管的高精确度的巨量转移。并且，在制作微发光二极管时，调距单元102处于伸展状态，因此微发光二极管之间的距离较大，对于加工精确度要求较低，从而可以降低微发光二极管的制作难度，节约制作成本。
在一个具体的例子中，如图3a和图3b所示，该调距单元102可以包括：相对设置的第一起电结构103和第二起电结构104；其中，第一起电结构103和第二起电结构104的两端分别连接两相邻的基座1011，且二者在外力的作用下发生形变，并能够在相互接触时产生不同极性的电荷。
需要说明的是，在本发明实施例中，调距单元102由相对设置的第一起电结构103和第二起电结构104组成。在初始状态时，通过施加外力，可以使得第一起电结构103和第二起电结构104沿着平行于基底101所在平面方向上处于伸展状态，并相互接触，该外力的方向可以是垂直于基底101所在平面方向。可以将第一起电结构103和第二起电结构104反复的伸展与收缩，由于摩擦起电效应，在第一起电结构103和第二起电结构104接触的表面可以产生数量相等、极性相反的电荷。此时，由于第一起电结构103和第二起电结构104之间具有一定的间隙，该间隙较小，并小于预设的临界值，第一起电结构103和第二起电结构104处于一个平衡态，可以使得电荷被屏蔽在第一起电结构103和第二起电结构104之间，而且不向外传导，也不进行中和。可以通过施加外力，根据微发光二极管显示面板上的微发光二极管的精度，可以使得第一起电单元103和第二起电单元104收缩至一定程度，第一起电单元103和第二起电单元104的接触面分离，从而使得相邻的基座1011之间的距离缩短，进而使得相邻的待进行转移的微发光二极管之间的距离缩短。此时，第一起电结构103和第二起电结构104处于之间处于分离状态，第一起电结构103和第二起电结构104之间的间隙较大，并大于预设的临界值，第一起电结构103和第二起电结构104的平衡态被打破，其中的电荷不被屏蔽，相应的电荷可以进行转移至微发光二极管相应的位置，使得产生的电荷可以用于对微发光二极管进行吸附，起到固定的作用。
具体地，如图3a和图3b所示，第一起电结构103包括：第一电极1031，设置在第一电极1031上的第一薄膜层1032；第二起电结构104包括：与第一电极1031相对设置的第二电极1041，设置在第二电极1041靠近第一电极1031的侧面上的第二薄膜层1042；其中，第一薄膜层1032和第二薄膜层1042的介电常数不同。
需要说明的是，第一薄膜层1032和第二薄膜层1042为两种介电常数不同的绝缘材料。在初始状态时，可以将第一薄膜层1032和第二薄膜层1042可以进行反复的伸展与收缩，由于摩擦起电效应，在第一薄膜层1032和第二薄膜层1042的表面可以产生数量相等且极性相反的电荷，此时，第一薄膜层1032和第二薄膜层1042之间的间隙较小，并小于预设的临界值，在第一薄膜层1032和第二薄膜层1042的界面出形成一个偶极层。由于第一薄膜层1032和第二薄膜层1042自身绝缘，所有的极性相反的电荷在界面处互相屏蔽，产生的电荷不会被传导或者被中和，处于平衡态。然后，通过施加外力，使得第一薄膜层1032和第二薄膜层1042分离，由于第一薄膜层1032和第二薄膜层1042处于分离状态，第一薄膜层1032和第二薄膜层1042之间的间隙较大，并大于预设的临界值，两个薄膜层上的极性相反的电荷不能完全屏蔽，产生电势差，此时，第一电极1031被诱导出与第一薄膜层1032产生的电荷的极性相反的电荷，第二电极1041被诱导出与第二薄膜层1042产生的电荷的极性相反的电荷，从而，第一电极1031和第二电极1041上的电荷的极性也相反。由于第一电极1031为导体，可以将诱导产生的相应极性的进行传导至基座1011位置处，利用静电对于微发光二极管的吸附能力，可以将微发光二极管进行固定，进而进行巨量转移。可以理解的是，第一电极1031和第二电极1042的可以在外力作用下使得其上的薄膜层相互接触或相互分离，其结构可以设置为如图3a和图3b所示的弯折形结构，也可以设置成圆弧形结构，也可以为其他形状的结构，在此不再一一列举。
可选地，基座1011上设置有转移电极105；其中，转移电极105与第一电极1031电连接。
需要说明的是，转移电极105与第一电极1031电连接，可以将第一电极1031诱导出相应极性的电荷传导至基座1011上的转移电极，从而转移电极105上的电荷与第一电极1031上的电荷的极性相同。并且，转移电极105和第一电极1031一般为同材质的材料制成，同材质的材料利于电荷从第一电极1031向转移电极105的传导。当转移电极105带电时，可以激发位于其上的待进行转移微发光二极管内的电荷向上下侧移动，从而，待进行转移微发光二极管的下侧的电荷与转移电极105的电荷极性相反，进而转移电极105可以对待进行转移的微发光二极管进行吸附，实现对微发光二极管的固定，进而实现巨量转移。
可选地，转移电极105与第一电极1031为一体式结构。
需要说明的是，转移电极105与第一电极1031的材料相同，两者制成一体式结构，便于电极的制作，可以降低工艺难度。
可选地，转移电极105的材料包括：铜。
需要说明的是，转移电极105可以为铜，也可以为其他利于传导电荷的材料，在此不再一一列举。
可选地，第一薄膜层1032的材料包括聚酰亚胺；第二薄膜层1042的材料包括聚对苯二甲酸乙二醇酯。
需要说明的是，第一膜层1032的材料为聚酰亚胺，第二膜层1042的材料为聚对苯二甲酸乙二醇酯，聚酰亚胺的介电常数小于聚对苯二甲酸乙二醇酯的介电常数，根据静电摩擦序列，按照柯恩法则，序列中介电常数比较大的带正电，介电常数比较小的带负电，因此，当二者相互接触时，第一薄膜层1032可以产生负电荷，第二膜层1042可以产生数量相等的正电荷，二者相互屏蔽，并诱导对应的第一电极1031产生正电荷，第二电极1041产生负电荷。当二者相互分离时，二者之间的屏蔽作用消失，并可以通过第一电极1031和第二电极1041将电荷传导至相应的位置处，用于微发光二极管的巨量转移。
可选地，基座1011与待进行转移的微发光二极管一一对应。
需要说明的是，每个基座1011可以用于承载一个微发光二极管，可以设置与待进行转移的发光二极管数量相等的基座，以实现微发光二极管的巨量转移。
可选地，在进行微发光二极管巨量转移时，需将转移基板上的微发光二极管转移至接收基板，该接收基板可以为显示基板，可以将转移基板上制作的微发光二极管直接转移至显示基板，也可以通过接收基板进行间接转移。该接收基板可以包括基底和位于基底上的接收电极，接收电极可以与上述微发光二极管转移基板的第二电极1041连接，通过第二电极1041将电荷传导至接收电极。由于第一电极1031和第二电极1041的电荷极性相反，因此传导至转移电极105和接收电极的电荷极性也相反。同时，由于待进行转移微发光二极管下侧的电荷由转移电极105激发产生的，微发光二极管下侧的电荷与转移电极105的电荷极性相反，上侧的电荷与转移电极105的电荷极性相同，因此，待进行转移发光二极管上端的电荷与接收基板的电荷极性相反，从而接收基板可以吸附待进行转移微发光二极管，实现微发光二极管的巨量转移。
实施例二
基于同一发明构思，本发明实施例提供了一种微发光二极管转移装置，该微发光二极管转移转置包括上述实施例提供的微发光二极管转移基板，还包括推动模块，该推动模块与调距单元连接，用于为调距单元施加外力，以使调距单元对基座之间的距离进行调整。
需要说明的是，推动模块可以对微发光二极管转移基板施加外力，使得调距单元处于伸展状态或收缩状态，因此可以缩短相邻基座之间的距离，从而缩短待进行转移的微发光二极管之间的距离，进而提高微发光二极管巨量转移的精确度，实现微发光二极管的高精确度的巨量转移。同时，推动模块可以对微发光二极管转移基板施加外力，可以将机械能转换为电能，采用静电吸附的方式对待进行转移的微发光二极管进行固定，实现微发光二极管的无源转移。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (8)

1.一种微发光二极管转移基板，其特征在于，包括：
基底，具有间隔设置多个基座；所述基座，用于承载待进行转移的微发光二极管；
调距单元，设置在两相邻所述基座之间，用于调整所述基座之间的距离；
所述调距单元，包括：相对设置的第一起电结构和第二起电结构；其中，
所述第一起电结构和所述第二起电结构的两端分别连接两相邻的所述基座，且二者在外力的作用下发生形变，并能够在相互接触时产生不同极性的电荷；
所述第一起电结构包括：第一电极，设置在所述第一电极上的第一薄膜层；
所述第二起电结构包括：与所述第一电极相对设置的第二电极，设置在所述第二电极靠近所述第一电极的侧面上的第二薄膜层；其中，
所述第一薄膜层和所述第二薄膜层的介电常数不同。
2.根据权利要求1所述的微发光二极管转移基板，其特征在于，在所述基座上设置有转移电极；其中，
所述转移电极与所述第一电极电连接。
3.根据权利要求2所述的微发光二极管转移基板，其特征在于，所述转移电极与所述第一电极为一体式结构。
4.根据权利要求2所述的微发光二极管转移基板，其特征在于，所述转移电极的材料包括：铜。
5.根据权利要求1所述的微发光二极管转移基板，其特征在于，所述第一薄膜层的材料包括聚酰亚胺；所述第二薄膜层的材料包括聚对苯二甲酸乙二醇酯。
6.根据权利要求1所述的微发光二极管转移基板，其特征在于，所述基座与待进行转移的所述微发光二极管一一对应。
7.一种微发光二极管转移装置，其特征在于，包括权利要求1-6中任一项所述的微发光二极管转移基板。
8.根据权利要求7所述的微发光二极管转移装置，其特征在于，还包括推动模块，与所述调距单元连接，用于为所述调距单元施加外力，以使所述调距单元对所述基座之间的距离进行调整。
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