CN108475026B - 热点及工艺窗监测 - Google Patents

热点及工艺窗监测 Download PDF

Info

Publication number
CN108475026B
CN108475026B CN201780005930.8A CN201780005930A CN108475026B CN 108475026 B CN108475026 B CN 108475026B CN 201780005930 A CN201780005930 A CN 201780005930A CN 108475026 B CN108475026 B CN 108475026B
Authority
CN
China
Prior art keywords
elements
sub
along
asymmetric
metrology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780005930.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN108475026A (zh
Inventor
B·戈洛瓦尼夫斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Priority to CN202110404661.0A priority Critical patent/CN112925177B/zh
Publication of CN108475026A publication Critical patent/CN108475026A/zh
Application granted granted Critical
Publication of CN108475026B publication Critical patent/CN108475026B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Image Analysis (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN201780005930.8A 2016-01-11 2017-01-06 热点及工艺窗监测 Active CN108475026B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110404661.0A CN112925177B (zh) 2016-01-11 2017-01-06 热点及工艺窗监测

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662277274P 2016-01-11 2016-01-11
US62/277,274 2016-01-11
PCT/US2017/012490 WO2017123464A1 (en) 2016-01-11 2017-01-06 Hot spot and process window monitoring

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202110404661.0A Division CN112925177B (zh) 2016-01-11 2017-01-06 热点及工艺窗监测

Publications (2)

Publication Number Publication Date
CN108475026A CN108475026A (zh) 2018-08-31
CN108475026B true CN108475026B (zh) 2021-04-23

Family

ID=59312167

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201780005930.8A Active CN108475026B (zh) 2016-01-11 2017-01-06 热点及工艺窗监测
CN202110404661.0A Active CN112925177B (zh) 2016-01-11 2017-01-06 热点及工艺窗监测

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202110404661.0A Active CN112925177B (zh) 2016-01-11 2017-01-06 热点及工艺窗监测

Country Status (8)

Country Link
US (2) US10354035B2 (https=)
EP (1) EP3403142B1 (https=)
JP (2) JP7117242B2 (https=)
KR (1) KR102424805B1 (https=)
CN (2) CN108475026B (https=)
IL (2) IL259823B (https=)
TW (1) TWI730031B (https=)
WO (1) WO2017123464A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10628544B2 (en) * 2017-09-25 2020-04-21 International Business Machines Corporation Optimizing integrated circuit designs based on interactions between multiple integration design rules
US10795268B2 (en) * 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
CN109581817B (zh) * 2017-09-29 2021-07-06 联华电子股份有限公司 半导体装置的形成方法
KR102154959B1 (ko) 2020-04-29 2020-09-10 동아에스티 주식회사 지속형 glp-1 및 글루카곤 수용체 이중작용제
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
EP4341752A4 (en) * 2021-12-17 2025-07-30 Kla Corp COVER TARGET DESIGN FOR IMPROVED TARGET PLACEMENT ACCURACY
WO2023113850A1 (en) 2021-12-17 2023-06-22 Kla Corporation Overlay target design for improved target placement accuracy
US20240053673A1 (en) * 2022-08-11 2024-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method of signal enhancement for alignment patterns
CN116341139B (zh) * 2023-03-23 2025-10-17 浙江大学 一种提高非对称柱塞泵极限转速的过渡区偏置设计方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6128089A (en) * 1998-07-28 2000-10-03 International Business Machines Corporation Combined segmented and nonsegmented bar-in-bar targets
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
EP1314198B1 (en) 2000-08-30 2017-03-08 KLA-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US6884552B2 (en) * 2001-11-09 2005-04-26 Kla-Tencor Technologies Corporation Focus masking structures, focus patterns and measurements thereof
US6772084B2 (en) * 2002-01-31 2004-08-03 Timbre Technologies, Inc. Overlay measurements using periodic gratings
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US20070222088A1 (en) 2003-04-08 2007-09-27 Aoti Operating Company, Inc, Overlay Metrology Mark
US7112890B2 (en) 2003-10-30 2006-09-26 Asml Holding N.V. Tunable alignment geometry
JP2006039148A (ja) * 2004-07-26 2006-02-09 Toshiba Corp ホトマスク、それを用いたフォーカス測定方法および半導体装置の製造方法
US7655388B2 (en) 2005-01-03 2010-02-02 Chartered Semiconductor Manufacturing, Ltd. Mask and method to pattern chromeless phase lithography contact hole
US7557921B1 (en) * 2005-01-14 2009-07-07 Kla-Tencor Technologies Corporation Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools
DE102005046973B4 (de) * 2005-09-30 2014-01-30 Globalfoundries Inc. Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers
US20070111109A1 (en) 2005-11-14 2007-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography scattering bar structure and method
NL1036856A1 (nl) 2008-04-24 2009-10-27 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
EP2392970A3 (en) 2010-02-19 2017-08-23 ASML Netherlands BV Method and apparatus for controlling a lithographic apparatus
JP5821100B2 (ja) 2010-12-17 2015-11-24 カール ツァイス エスエムエス ゲーエムベーハー フォトリソグラフィマスクによって処理されるウェーハ上の誤差を補正する方法及び装置
KR102057879B1 (ko) * 2012-06-22 2019-12-20 에이에스엠엘 네델란즈 비.브이. 포커스를 결정하는 방법, 검사 장치, 패터닝 장치, 기판, 및 디바이스 제조 방법
JP6478974B2 (ja) * 2013-04-10 2019-03-06 ケーエルエー−テンカー コーポレイション 標的設計及び製造における誘導自己組織化
US20150043391A1 (en) 2013-08-08 2015-02-12 Sharp Laboratories Of America, Inc. Systems and methods for reconfiguration signaling
NL2013838A (en) * 2013-12-17 2015-06-18 Asml Netherlands Bv Inspection method, lithographic apparatus, mask and substrate.
WO2015196168A1 (en) * 2014-06-21 2015-12-23 Kla-Tencor Corporation Compound imaging metrology targets
WO2016187062A1 (en) * 2015-05-15 2016-11-24 Kla-Tencor Corporation System and method for focus determination using focus-sensitive overlay targets

Also Published As

Publication number Publication date
CN112925177B (zh) 2022-09-06
JP7477564B2 (ja) 2024-05-01
KR102424805B1 (ko) 2022-07-22
US20190286781A1 (en) 2019-09-19
JP2019502959A (ja) 2019-01-31
CN112925177A (zh) 2021-06-08
EP3403142B1 (en) 2022-11-09
JP7117242B2 (ja) 2022-08-12
IL259823B (en) 2021-09-30
JP2022153592A (ja) 2022-10-12
KR20180095717A (ko) 2018-08-27
US10755016B2 (en) 2020-08-25
IL285530A (en) 2021-09-30
TW201732660A (zh) 2017-09-16
EP3403142A4 (en) 2019-09-04
IL259823A (en) 2018-07-31
CN108475026A (zh) 2018-08-31
WO2017123464A1 (en) 2017-07-20
EP3403142A1 (en) 2018-11-21
US20180232478A1 (en) 2018-08-16
TWI730031B (zh) 2021-06-11
IL285530B (en) 2022-06-01
US10354035B2 (en) 2019-07-16

Similar Documents

Publication Publication Date Title
CN108475026B (zh) 热点及工艺窗监测
US9910348B2 (en) Method of simultaneous lithography and etch correction flow
CN101334586A (zh) 用于半导体器件的掩模的制造方法
Kahng et al. Fast dual graph-based hotspot detection
US7820346B2 (en) Method for collecting optical proximity correction parameter
US8782572B1 (en) Method of optical proximity correction
US8443309B2 (en) Multifeature test pattern for optical proximity correction model verification
TWI575308B (zh) 修正輔助圖案的方法
CN115933304B (zh) 光学邻近效应修正方法、装置及电子设备、存储介质
CN109119353A (zh) 蚀刻后阶段监控叠对情形与临界尺寸的半导体图案
US10748821B2 (en) Method and system for measuring pattern placement error on a wafer
Sarma et al. 3D physical modeling for patterning process development
JP4952420B2 (ja) 多重露光技術用フォトマスクの設計パタン検証方法
Ghosh et al. Full-chip high sigma probabilistic modeling, defect detection and repair in advanced EUV nodes
Rittman Nanometer DFM–the tip of the ice
Wu et al. Lithography process calibration with applications in defect printability analysis
O'Brien et al. OPC on real-world circuitry
Melvin III et al. Assist feature placement analysis using focus sensitivity models
Zheng et al. Assist feature printability prediction by 3-D resist profile reconstruction
Yu et al. Production-worthy full chip image-based verification
Al-Imam et al. SEM based data extraction for model calibration
Choi et al. Control of CD errors and Hotspots by using a design based verification system

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant