CN108469865A - In high precision, the working method of the band gap reference of low-power dissipation power supply device - Google Patents
In high precision, the working method of the band gap reference of low-power dissipation power supply device Download PDFInfo
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- CN108469865A CN108469865A CN201810323049.9A CN201810323049A CN108469865A CN 108469865 A CN108469865 A CN 108469865A CN 201810323049 A CN201810323049 A CN 201810323049A CN 108469865 A CN108469865 A CN 108469865A
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- resistance
- pmos tube
- triode
- operational amplifier
- connects
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The present invention relates to power technique fields more particularly to high-precision, the working methods of the band gap reference of low-power dissipation power supply device.A kind of low-power consumption band gap reference in the present invention, including input stabilizing circuit and benchmark source generating circuit.The present invention also provides a kind of supply units.The present invention, by increasing temperature-compensating branch, reduces the temperature coefficient of output voltage, and have lower power consumption on the basis of traditional bandgap reference voltage circuit.The low-power consumption band gap reference and supply unit of the present invention, efficiently solve the problems, such as that band gap reference low precision, power consumption are high in the prior art, on the basis of traditional benchmark potential circuit, by increasing temperature-compensating branch, the temperature coefficient of output voltage is reduced, and there is lower power consumption.
Description
Technical field
The present invention relates to Analogical Circuit Technique field more particularly to the band gap bases of high-precision, low-power dissipation power supply device
The working method in quasi- source.
Background technology
Reference voltage generating circuit is the basic mould in Analog Circuit Design, mixed-signal circuit design and Digital Design
Module unit, its effect are to provide a reference voltage not changed with temperature and supply voltage for system.It is produced in reference voltage
In raw circuit, temperature coefficient（TC, Temperature Coefficient）And power supply rejection ratio（PSRR, Power Supply
Rejection Ratio）The two parameters play conclusive effect, high-precision, low-power consumption, high electricity to the quality of power source performance
Source inhibits most important for entire circuit than, the reference voltage generating circuit of low-temperature coefficient.Traditional band-gap reference
Voltage by two voltages with Positive and Negative Coefficient Temperature by carrying out the reference voltage that linear superposition can be obtained zero-temperature coefficient.
The difference of the base emitter voltage of two double pole triodes is and absolute temperature is proportional to, the base stage-of bipolar transistor
Emitter voltage has negative temperature coefficient property, using both voltages of different nature with obtaining in certain proportion and temperature
Change unrelated reference voltage.Since traditional reference voltage generating circuit only carries out linear compensation, low precision, in temperature range
When changing greatly, the voltage of generation is usually not satisfactory, especially in some require relatively high circuit to voltage accuracy, line
Property compensation after the voltage that generates far can not meet the requirements.Based on this, the present invention provides a kind of low work(with higher precision
Consume band gap reference.In addition, the present invention also provides a kind of supply units.
Invention content
The purpose of the present invention is to solve the high problems of the height of band gap reference temperature coefficient in the prior art, power consumption, carry
A kind of working method of the low-power consumption band gap reference of higher precision is supplied.
The present invention provides a kind of low-power consumption band gap references, including input stabilizing circuit and benchmark source generating circuit；Institute
It includes the first operational amplifier OP1 to state input stabilizing circuit, and the first operational amplifier OP1 positive inputs connect input voltage
One end of the grid and the first capacitance C1 of the first PMOS tube P1 of output end connection of VIN, the first operational amplifier OP1, first
The other end and first resistor of the first capacitance C1 of drain electrode connection of source electrode connection the voltage VDD, the first PMOS tube P1 of PMOS tube P1
One end of R1, the reverse input end of the first operational amplifier OP1 of other end connection of first resistor R1 and the one of second resistance R2
End, the other end ground connection of second resistance R2；The benchmark source generating circuit includes：Second PMOS tube P2, the second PMOS tube P2's
Source electrode connects the drain electrode of the first PMOS tube P1, and the grid of the second PMOS tube P2 connects the output end of second operational amplifier OP2, the
The drain and gate of the first NMOS tube N1 of drain electrode connection of two PMOS tube P2 and the grid of the second NMOS tube N2, the first NMOS tube
The first end of the source electrode connection 3rd resistor R3 of N1, the other end ground connection of 3rd resistor R3；One end connection the of 4th resistance R4
The drain electrode of one PMOS tube P1, the source electrode of the other end connection third PMOS tube P3 of the 4th resistance R4, the grid of third PMOS tube P3
Connect the output end of second operational amplifier OP2, one end of the 5th resistance R5 of drain electrode connection of third PMOS tube P3, the 5th resistance
The other end of R5 connects the 6th resistance R6, one end of the 7th resistance R7 and the drain electrode of the second NMOS tube N2, the 6th resistance R6's
The other end connects the reverse input end of one end and second operational amplifier OP2 of the 8th resistance R8, the other end of the 8th resistance R8
Connect the emitter of the first triode Q1, the positive input of the other end connection second operational amplifier OP2 of the 7th resistance R7
With the emitter of the second triode Q2, the grounded collector of the first triode Q1, the 9th electricity of base stage connection of the first triode Q1
Hinder one end of R9, the other end ground connection of the 9th resistance R9, the grounded collector of the second triode Q2, the base stage of the second triode Q2
One end of the tenth resistance R10 is connected, the drain electrode of the other end ground connection of the tenth resistance R10, third PMOS tube P3 is a reference source electricity
The output end VOUT on road.The first triode Q1, the second triode Q2 are PNP pipe.
The present invention also provides a kind of supply unit, the supply unit includes above-mentioned band gap reference, further includes electricity
Voltage conversion circuit, the voltage conversion circuit are used to provide DC voltage for band gap reference.The voltage conversion circuit includes
Voltage conversion chip, the first inductance L1, eleventh resistor R11, twelfth resistor R12, the second capacitance C2, diode D1.Wherein
Voltage conversion chip includes input pin IN, output pin SW and feedback pin FB, the cathode of output pin SW and diode D1
It is connected, one end of the plus earth of diode D1, the first inductance L1 is connected with the cathode of diode D1, and the second of the first inductance L1
End is connected with one end of eleventh resistor R11, and the other end of eleventh resistor R11 is connected with one end of twelfth resistor R12, the
The other end of 12 resistance R12 is grounded, and feedback pin FB is connected between eleventh resistor R11 and twelfth resistor R12.Second
One end of capacitance C2 is connected between the first inductance L1 and eleventh resistor R11, other end ground connection；The output electricity of output pin SW
Press the input as band gap reference.
A kind of low-power consumption band gap reference and supply unit provided by the present invention, efficiently solve band in the prior art
The high problem of gap a reference source low precision, power consumption, on the basis of traditional benchmark potential circuit, by increasing temperature-compensating branch,
The temperature coefficient of output voltage is reduced, and there is lower power consumption.
Description of the drawings
Fig. 1 is a kind of low-power consumption band gap reference schematic diagram provided by the invention；
Fig. 2 is a kind of temperature characteristics of low-power consumption band gap reference output voltage provided by the invention；
Fig. 3 is a kind of structural schematic diagram of supply unit provided by the invention.
Specific implementation mode
The present invention provides a kind of low-power consumption band gap reference and supply units, to make the purpose of the present invention, technical solution
And advantage is clearer, clear, the present invention is described in more detail for the embodiment that develops simultaneously referring to the drawings.It should be appreciated that this
The described specific embodiment in place is only used to explain the present invention, is not intended to limit the present invention.
As shown in fig. 1, a kind of low-power consumption band gap reference, including input stabilizing circuit and benchmark source generating circuit；It is described
Input stabilizing circuit includes the first operational amplifier OP1, and the first operational amplifier OP1 positive inputs connect input voltage VIN,
The output end of first operational amplifier OP1 connects one end of the grid and the first capacitance C1 of the first PMOS tube P1, the first PMOS tube
The other end of the first capacitance C1 of drain electrode connection of source electrode connection the voltage VDD, the first PMOS tube P1 of P1 and the one of first resistor R1
End, one end of the reverse input end and second resistance R2 of the first operational amplifier OP1 of other end connection of first resistor R1, second
The other end of resistance R2 is grounded；The benchmark source generating circuit includes：The source electrode of second PMOS tube P2, the second PMOS tube P2 connects
The drain electrode of first PMOS tube P1, the output end of the grid connection second operational amplifier OP2 of the second PMOS tube P2, the second PMOS tube
The drain and gate of the first NMOS tube N1 of drain electrode connection of P2 and the grid of the second NMOS tube N2, the source electrode of the first NMOS tube N1
Connect the first end of 3rd resistor R3, the other end ground connection of 3rd resistor R3；One end of 4th resistance R4 connects the first PMOS tube
The drain electrode of P1, the source electrode of the other end connection third PMOS tube P3 of the 4th resistance R4, the grid connection second of third PMOS tube P3
The output end of operational amplifier OP2, one end of the 5th resistance R5 of drain electrode connection of third PMOS tube P3, the 5th resistance R5's is another
The 6th resistance R6 of end connection, one end of the 7th resistance R7 and the drain electrode of the second NMOS tube N2, the other end of the 6th resistance R6 connect
Connect the reverse input end of one end and second operational amplifier OP2 of the 8th resistance R8, the other end connection first of the 8th resistance R8
The emitter of triode Q1, the positive input and the two or three of the other end connection second operational amplifier OP2 of the 7th resistance R7
The emitter of pole pipe Q2, the grounded collector of the first triode Q1, the base stage of the first triode Q1 connect the one of the 9th resistance R9
End, the other end ground connection of the 9th resistance R9, the grounded collector of the second triode Q2, the base stage connection the tenth of the second triode Q2
One end of resistance R10, the other end ground connection of the tenth resistance R10, the drain electrode of third PMOS tube P3 is the output of reference source circuit
Hold VOUT.
In above-mentioned low-power consumption band-gap reference source circuit, the gate source voltage difference of the second PMOS tube P2 is equal to third PMOS tube P3
Gate source voltage difference adds the voltage at the both ends resistance R4, and third PMOS tube P3 is electric by the output for receiving second operational amplifier OP2
Pressure controls the sum of two branch currents for flowing through the first triode Q1, the second triode Q2, be set separately the second PMOS tube P2,
The breadth length ratio of third PMOS tube P3 similarly, can set the first NMOS tube N1, to obtain the current mirror of corresponding multiple
The breadth length ratio of two NMOS tube N2 obtains the current mirror of corresponding multiple, so as to flow through the second NMOS tube N2's by control
The temperature coefficient that current convection crosses two branch currents of the first triode Q1, the second triode Q2 carries out curvature compensation, goes forward side by side
One step obtains the output voltage of lower temperature coefficient.
Simulation result shows that reference voltage generating circuit of the invention has lower temperature coefficient and lower power consumption,
Wherein, the temperature characteristics of output voltage is as shown in Figure 2.
As shown in figure 3, the present invention also provides a kind of supply unit, the supply unit includes above-mentioned band-gap reference
Source further includes voltage conversion circuit, and the voltage conversion circuit is used to provide DC voltage for band gap reference.The voltage turns
It includes voltage conversion chip to change circuit, the first inductance L1, eleventh resistor R11, twelfth resistor R12, the second capacitance C2, two poles
Pipe D1.Wherein voltage conversion chip includes input pin IN, output pin SW and feedback pin FB, output pin SW and diode
The cathode of D1 is connected, and one end of the plus earth of diode D1, the first inductance L1 is connected with the cathode of diode D1, the first inductance
The second end of L1 is connected with one end of eleventh resistor R11, the other end of eleventh resistor R11 and the one of twelfth resistor R12
End is connected, and the other end ground connection of twelfth resistor R12, feedback pin FB is connected to eleventh resistor R11 and twelfth resistor R12
Between.One end of second capacitance C2 is connected between the first inductance L1 and eleventh resistor R11, other end ground connection；Output pin
Input of the output voltage of SW as band gap reference.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect range.
Claims (1)
1. a kind of working method of low-power consumption band gap reference, the band gap reference includes input stabilizing circuit and a reference source production
Raw circuit；It is characterized in that, the input stabilizing circuit includes the first operational amplifier OP1, the first operational amplifier OP1 positive
Input terminal connects input voltage VIN, and the output end of the first operational amplifier OP1 connects the grid and the first electricity of the first PMOS tube P1
Hold one end of C1, the first capacitance C1's of drain electrode connection of source electrode connection the voltage VDD, the first PMOS tube P1 of the first PMOS tube P1 is another
One end of one end and first resistor R1, the other end of first resistor R1 connect the first operational amplifier OP1 reverse input end and
One end of second resistance R2, the other end ground connection of second resistance R2；The benchmark source generating circuit includes：Second PMOS tube P2,
The source electrode of second PMOS tube P2 connects the drain electrode of the first PMOS tube P1, and the grid of the second PMOS tube P2 connects second operational amplifier
The output end of OP2, the drain and gate and the second NMOS tube N2 of the first NMOS tube N1 of drain electrode connection of the second PMOS tube P2
Grid, the first end of the source electrode connection 3rd resistor R3 of the first NMOS tube N1, the other end ground connection of 3rd resistor R3；4th resistance
One end of R4 connects the drain electrode of the first PMOS tube P1, the source electrode of the other end connection third PMOS tube P3 of the 4th resistance R4, third
The output end of the grid connection second operational amplifier OP2 of PMOS tube P3, the drain electrode of third PMOS tube P3 connect the 5th resistance R5
One end, the other end of the 5th resistance R5 connects the 6th resistance R6, one end of the 7th resistance R7 and the leakage of the second NMOS tube N2
Pole, the reverse input end of one end and second operational amplifier OP2 of the 8th resistance R8 of other end connection of the 6th resistance R6, the 8th
The other end of resistance R8 connects the emitter of the first triode Q1, and the other end of the 7th resistance R7 connects second operational amplifier
The emitter of the positive input of OP2 and the second triode Q2, the grounded collector of the first triode Q1, the first triode Q1's
Base stage connects one end of the 9th resistance R9, and the other end of the 9th resistance R9 is grounded, the grounded collector of the second triode Q2, and second
The base stage of triode Q2 connects one end of the tenth resistance R10, the other end ground connection of the tenth resistance R10, the leakage of third PMOS tube P3
Pole is the output end VOUT of reference source circuit；
The working method, including：The gate source voltage difference of second PMOS tube P2 adds equal to third PMOS tube P3 gate source voltage differences
The voltage at the both ends upper resistance R4, third PMOS tube P3 are flowed through by receiving the output voltage of second operational amplifier OP2 to control
The second PMOS tube P2, third PMOS tube P3 is set separately in the sum of two branch currents of first triode Q1, the second triode Q2
Breadth length ratio, to obtain the current mirror of corresponding multiple；
Similarly, set the first NMOS tube N1, the breadth length ratio of the second NMOS tube N2 obtains the current mirror of corresponding multiple, to logical
Cross the temperature for controlling two branch currents that the current convection for flowing through the second NMOS tube N2 crosses the first triode Q1, the second triode Q2
It spends coefficient and carries out curvature compensation, and obtain the output voltage of lower temperature coefficient.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810323049.9A CN108469865A (en) | 2017-05-09 | 2017-05-09 | In high precision, the working method of the band gap reference of low-power dissipation power supply device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710323011.7A CN106940580B (en) | 2017-05-09 | 2017-05-09 | A kind of low-power consumption band gap reference and supply unit |
| CN201810323049.9A CN108469865A (en) | 2017-05-09 | 2017-05-09 | In high precision, the working method of the band gap reference of low-power dissipation power supply device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710323011.7A Division CN106940580B (en) | 2017-05-09 | 2017-05-09 | A kind of low-power consumption band gap reference and supply unit |
Publications (1)
| Publication Number | Publication Date |
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| CN108469865A true CN108469865A (en) | 2018-08-31 |
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Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810302326.8A Withdrawn CN108445955A (en) | 2017-05-09 | 2017-05-09 | In high precision, the working method of low-power dissipation power supply device |
| CN201810301442.8A Withdrawn CN108427466A (en) | 2017-05-09 | 2017-05-09 | In high precision, low-power dissipation power supply device |
| CN201810302322.XA Withdrawn CN108196615A (en) | 2017-05-09 | 2017-05-09 | A kind of high-precision, low-power dissipation power supply device |
| CN201710323011.7A Active CN106940580B (en) | 2017-05-09 | 2017-05-09 | A kind of low-power consumption band gap reference and supply unit |
| CN201810221822.0A Pending CN108427464A (en) | 2017-05-09 | 2017-05-09 | A kind of supply unit including band gap reference |
| CN201810323049.9A Withdrawn CN108469865A (en) | 2017-05-09 | 2017-05-09 | In high precision, the working method of the band gap reference of low-power dissipation power supply device |
| CN201810322250.5A Withdrawn CN108427467A (en) | 2017-05-09 | 2017-05-09 | A kind of high-precision, the working method of low-power dissipation power supply device |
| CN201810302313.0A Withdrawn CN108376011A (en) | 2017-05-09 | 2017-05-09 | In high precision, the band gap reference of low-power dissipation power supply device |
Family Applications Before (5)
| Application Number | Title | Priority Date | Filing Date |
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| CN201810302326.8A Withdrawn CN108445955A (en) | 2017-05-09 | 2017-05-09 | In high precision, the working method of low-power dissipation power supply device |
| CN201810301442.8A Withdrawn CN108427466A (en) | 2017-05-09 | 2017-05-09 | In high precision, low-power dissipation power supply device |
| CN201810302322.XA Withdrawn CN108196615A (en) | 2017-05-09 | 2017-05-09 | A kind of high-precision, low-power dissipation power supply device |
| CN201710323011.7A Active CN106940580B (en) | 2017-05-09 | 2017-05-09 | A kind of low-power consumption band gap reference and supply unit |
| CN201810221822.0A Pending CN108427464A (en) | 2017-05-09 | 2017-05-09 | A kind of supply unit including band gap reference |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
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| CN201810322250.5A Withdrawn CN108427467A (en) | 2017-05-09 | 2017-05-09 | A kind of high-precision, the working method of low-power dissipation power supply device |
| CN201810302313.0A Withdrawn CN108376011A (en) | 2017-05-09 | 2017-05-09 | In high precision, the band gap reference of low-power dissipation power supply device |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108268080A (en) | 2018-01-26 | 2018-07-10 | 武汉新芯集成电路制造有限公司 | Band-gap reference circuit |
| CN108279730A (en) * | 2018-01-26 | 2018-07-13 | 武汉新芯集成电路制造有限公司 | Band-gap reference circuit |
| CN110377094B (en) | 2019-05-17 | 2020-11-27 | 东南大学 | Low-temperature-drift low-power-consumption linear voltage stabilizer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101251758A (en) * | 2008-04-03 | 2008-08-27 | 哈尔滨工业大学 | Sharing voltage prestabilizing circuit |
| CN101673123A (en) * | 2009-09-25 | 2010-03-17 | 上海宏力半导体制造有限公司 | Bandgap voltage generator with curvature compensation |
| CN103064457A (en) * | 2012-12-21 | 2013-04-24 | 厦门大学 | Complementary metal oxide semiconductor (CMOS) band-gap reference circuit based on negative feedback |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4822431B2 (en) * | 2005-09-07 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | Reference voltage generating circuit, semiconductor integrated circuit, and semiconductor integrated circuit device |
| CN201689355U (en) * | 2009-11-09 | 2010-12-29 | 天津南大强芯半导体芯片设计有限公司 | Unsymmetrical bias voltage compensating band-gap reference circuit |
| CN201887731U (en) * | 2010-09-25 | 2011-06-29 | 苏州华芯微电子股份有限公司 | Adjustable high-precision RC oscillating circuit |
| CN202433799U (en) * | 2012-02-24 | 2012-09-12 | 电子科技大学 | Band-gap reference voltage source |
| CN102681584B (en) * | 2012-05-30 | 2014-04-23 | 昆山锐芯微电子有限公司 | Low noise bandgap reference circuit and reference source generation system |
| CN103412595A (en) * | 2013-06-20 | 2013-11-27 | 中国矿业大学 | Low-power-source-dependency band-gap reference voltage circuit design based on PTAT current |
| CN104765405B (en) * | 2014-01-02 | 2017-09-05 | 意法半导体研发(深圳)有限公司 | The current reference circuit of temperature and technological compensa tion |
| CN205334278U (en) * | 2015-12-30 | 2016-06-22 | 北京同方微电子有限公司 | Linear voltage regulator with voltage pre -stabilizing circuit |
| CN106125811B (en) * | 2016-06-15 | 2017-07-21 | 北京工业大学 | A kind of ultra-low temperature drift high PSRR bandgap voltage reference |
-
2017
- 2017-05-09 CN CN201810302326.8A patent/CN108445955A/en not_active Withdrawn
- 2017-05-09 CN CN201810301442.8A patent/CN108427466A/en not_active Withdrawn
- 2017-05-09 CN CN201810302322.XA patent/CN108196615A/en not_active Withdrawn
- 2017-05-09 CN CN201710323011.7A patent/CN106940580B/en active Active
- 2017-05-09 CN CN201810221822.0A patent/CN108427464A/en active Pending
- 2017-05-09 CN CN201810323049.9A patent/CN108469865A/en not_active Withdrawn
- 2017-05-09 CN CN201810322250.5A patent/CN108427467A/en not_active Withdrawn
- 2017-05-09 CN CN201810302313.0A patent/CN108376011A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101251758A (en) * | 2008-04-03 | 2008-08-27 | 哈尔滨工业大学 | Sharing voltage prestabilizing circuit |
| CN101673123A (en) * | 2009-09-25 | 2010-03-17 | 上海宏力半导体制造有限公司 | Bandgap voltage generator with curvature compensation |
| CN103064457A (en) * | 2012-12-21 | 2013-04-24 | 厦门大学 | Complementary metal oxide semiconductor (CMOS) band-gap reference circuit based on negative feedback |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106940580A (en) | 2017-07-11 |
| CN106940580B (en) | 2018-05-15 |
| CN108427467A (en) | 2018-08-21 |
| CN108445955A (en) | 2018-08-24 |
| CN108376011A (en) | 2018-08-07 |
| CN108427466A (en) | 2018-08-21 |
| CN108427464A (en) | 2018-08-21 |
| CN108196615A (en) | 2018-06-22 |
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Application publication date: 20180831 |