CN108461428A - 半导体整流器件用加工装置 - Google Patents

半导体整流器件用加工装置 Download PDF

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CN108461428A
CN108461428A CN201810255573.7A CN201810255573A CN108461428A CN 108461428 A CN108461428 A CN 108461428A CN 201810255573 A CN201810255573 A CN 201810255573A CN 108461428 A CN108461428 A CN 108461428A
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许卫岗
蒋祖良
吴志新
毛韦娟
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Suzhou Good Ark Electronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
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Abstract

本发明公开一种半导体整流器件用加工装置,其第二铜引线的一端通过焊锡连接到所述二极管芯片的P极面,第二铜引线的另一端作为所述轴向型二极管输入端,所述二极管芯片、第一铜引线第二铜引线与二极管芯片接触的一端由环氧体包覆;周转装置包括条状基板、若干个梳料齿和若干个定向齿,若干个所述梳料齿位于条状基板中部且沿其长度方向呈一字排列,若干个所述定向齿位于条状基板一侧边且沿其长度方向呈一字排列;所述左、右手柄与梳料齿、定向齿分别位于条状基板两侧,所述左、右手柄与条状基板的夹角为30°。本发明可以将焊接好的二极管从石墨舟上梳起来并旋转180度材料不会掉下,从而达到减少周转工具的目的,提高人工效率。

Description

半导体整流器件用加工装置
技术领域
本发明涉及整流器件的生产,特别涉及一种半导体整流器件用加工装置。
背景技术
现有技术在二极管制造中通过梳料条将材料梳到铝条上,然后再将铝条上的材料转移到成型模具的上料架上。这样的方式带来的 问题是增加周转工具、增加人工成本、增加一道工序对产品造成损伤的风险。
发明内容
本发明目的是提供一种半导体整流器件用加工装置,该半导体整流器件用加工装置将焊接好的二极管从石墨舟上梳起来并旋转180度材料不会掉下,从而达到直接上料的目的,可以减少周转工具、提高人工效率、减少二极管周转的工序,提高产品良率。
为达到上述目的,本发明采用的技术方案是:一种半导体整流器件用加工装置,所述轴向型二极管包括二极管芯片、第一铜引线、第二铜引线,所述第一铜引线的一端通过焊锡连接到所述二极管芯片的N极面,第一铜引线的另一端作为所述轴向型二极管输入端;所述第二铜引线的一端通过焊锡连接到所述二极管芯片的P极面,第二铜引线的另一端作为所述轴向型二极管输入端,所述二极管芯片、第一铜引线第二铜引线与二极管芯片接触的一端由环氧体包覆;
所述周转装置包括条状基板、若干个梳料齿和若干个定向齿,若干个所述梳料齿位于条状基板中部且沿其长度方向呈一字排列,若干个所述定向齿位于条状基板一侧边且沿其长度方向呈一字排列,从而在若干个梳料齿和若干个定向齿之间形成一长沟槽,相邻梳料齿之间具有梳料齿间槽,相邻定向齿之间具有定向齿间槽,所述梳料齿间槽、定向齿间槽的间隙大于所述第一铜引线、第二铜引线的直径;
所述梳料齿和定向齿位于条状基板同侧且相向设置,所述条状基板沿长度方向的两端分别设置有左、右手柄,所述梳料齿的上端具有一伸入长沟槽的钩部;
所述左、右手柄与梳料齿、定向齿分别位于条状基板两侧,所述左、右手柄与条状基板的夹角为30°。
上述技术方案中进一步改进的技术方案如下:
1. 作为优选方案,所述左、右手柄与梳料齿、定向齿分别位于条状基板两侧。
2. 作为优选方案,所述左、右手柄与条状基板的夹角为20°~40°。
由于上述技术方案运用,本发明与现有技术相比具有下列优点和效果:
本发明半导体整流器件用加工装置,其可以将焊接好的二极管从石墨舟上梳起来并旋转180度材料不会掉下,从而达到直接上料的目的,可以减少周转工具、提高人工效率、减少二极管周转的工序,提高产品良率。
附图说明
附图1为现有轴向型二极管结构示意图;
附图2为本发明半导体整流器件用加工装置结构示意图;
附图3为附图2的局部结构示意图;
附图4为附图3的侧视结构示意图;
附图5为本发明半导体整流器件用加工装置使用状态示意图。
以上附图中:1、二极管芯片;2、第一铜引线;3、第二铜引线;4、焊锡;5、环氧体;6、条状基板;7、梳料齿;71、梳料齿间槽;8、定向齿;81、梳料齿间槽;9、长沟槽;10、钩部;11、左手柄;12、右手柄。
具体实施方式
下面结合附图及实施例对本发明作进一步描述:
实施例:一种半导体整流器件用加工装置,所述轴向型二极管包括二极管芯片1、第一铜引线2、第二铜引线3,所述第一铜引线2的一端通过焊锡4连接到所述二极管芯片1的N极面,第一铜引线2的另一端作为所述轴向型二极管输入端;所述第二铜引线3的一端通过焊锡4连接到所述二极管芯片1的P极面,第二铜引线3的另一端作为所述轴向型二极管输入端,所述二极管芯片1、第一铜引线2第二铜引线3与二极管芯片接触的一端由环氧体5包覆;
所述周转装置包括条状基板6、若干个梳料齿7和若干个定向齿8,若干个所述梳料齿7位于条状基板6中部且沿其长度方向呈一字排列,若干个所述定向齿8位于条状基板6一侧边且沿其长度方向呈一字排列,从而在若干个梳料齿7和若干个定向齿8之间形成一长沟槽9,相邻梳料齿7之间具有梳料齿间槽71,相邻定向齿8之间具有定向齿间槽81,所述梳料齿间槽71、定向齿间槽81的间隙大于所述第一铜引线2、第二铜引线3的直径;
所述梳料齿7和定向齿8位于条状基板6同侧且相向设置,所述条状基板6沿长度方向的两端分别设置有左、右手柄11、12,所述梳料齿7的上端具有一伸入长沟槽9的钩部10。
上述左、右手柄11、12与梳料齿7、定向齿8分别位于条状基板6两侧。
上述左、右手柄11、12与条状基板6的夹角为30°。
上述半导体整流器件用加工装置工作过程如下:梳料齿间槽71用于固定二极管,长沟槽9用于避开二极管中间的晶粒部分,钩部10目的是当周转装置旋转180度后可以支撑二极管,使二极管不会掉落,左、右手柄11、12便于手工操作。
采用上述半导体整流器件用加工装置时,其可以将焊接好的二极管从石墨舟上梳起来并旋转180度材料不会掉下,从而达到直接上料的目的。达到该目的就可以减少周转工具、提高人工效率、减少铝条周转的工序,提高产品良率。
上述实施例只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰,都应涵盖在本发明的保护范围之内。

Claims (1)

1.一种半导体整流器件用加工装置,其特征在于:所述半导体整流器件包括二极管芯片(1)、第一铜引线(2)、第二铜引线(3),所述第一铜引线(2)的一端通过焊锡(4)连接到所述二极管芯片(1)的N极面,第一铜引线(2)的另一端作为所述轴向型二极管输入端;所述第二铜引线(3)的一端通过焊锡(4)连接到所述二极管芯片(1)的P极面,第二铜引线(3)的另一端作为所述轴向型二极管输入端,所述二极管芯片(1)、第一铜引线(2)、第二铜引线(3)与二极管芯片(1)接触的一端由环氧体(5)包覆;
所述高效加工装置包括条状基板(6)、若干个梳料齿(7)和若干个定向齿(8),若干个所述梳料齿(7)位于条状基板(6)中部且沿其长度方向呈一字排列,若干个所述定向齿(8)位于条状基板(6)一侧边且沿其长度方向呈一字排列,从而在若干个梳料齿(7)和若干个定向齿(8)之间形成一长沟槽(9),相邻梳料齿(7)之间具有梳料齿间槽(71),相邻定向齿(8)之间具有定向齿间槽(81),所述梳料齿间槽(71)、定向齿间槽(81)的间隙大于所述第一铜引线(2)、第二铜引线(3)的直径;
所述梳料齿(7)和定向齿(8)位于条状基板(6)同侧且相向设置,所述条状基板(6)沿长度方向的两端分别设置有左、右手柄(11、12),所述梳料齿(7)的上端具有一伸入长沟槽(9)的钩部(10);
所述左、右手柄(11、12)与梳料齿(7)、定向齿(8)分别位于条状基板(6)两侧,所述左、右手柄(11、12)与条状基板(6)的夹角为30°。
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