CN108376707A - A kind of enhanced HEMT device of GaN base and preparation method thereof - Google Patents
A kind of enhanced HEMT device of GaN base and preparation method thereof Download PDFInfo
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- CN108376707A CN108376707A CN201810025970.5A CN201810025970A CN108376707A CN 108376707 A CN108376707 A CN 108376707A CN 201810025970 A CN201810025970 A CN 201810025970A CN 108376707 A CN108376707 A CN 108376707A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 149
- 238000005036 potential barrier Methods 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 230000004888 barrier function Effects 0.000 claims abstract description 40
- 238000002161 passivation Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000003647 oxidation Effects 0.000 claims abstract description 16
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 12
- 230000006378 damage Effects 0.000 claims abstract description 9
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Present invention relates particularly to enhanced HEMT devices of a kind of GaN base and preparation method thereof.The device includes substrate and epitaxial layer, and epitaxial layer includes successively from bottom to up buffer layer, GaN channel layers, AlGaN potential barrier, p-type AlGaN potential barrier, further includes AlGaN oxide layers, passivation layer, Source and drain metal level and barrier metal layer.Source and drain metal level is vaporized on the AlGaN potential barrier of source drain region, and barrier metal layer is stacked on p-type AlGaN potential barrier, and AlGaN oxide layers side wall connects with p-type AlGaN potential barrier side wall, and AlGaN oxide layers are between source-drain electrode and p-type AlGaN potential barrier.The p-type AlGaN of the present invention can exhaust the two-dimensional electron gas at grid groove as gate barrier layer, which is enhanced；The problems such as autoregistration oxidation may be implemented, while avoiding the ion dam age brought when etching p-type AlGaN single crystalline layers.
Description
Technical field
The present invention relates to field of semiconductor integration technology more particularly to a kind of enhanced HEMT device of GaN base and its preparations
Method.
Background technology
The research of GaN material and device and forward position and hot spot that application is current global semiconductor research.GaN material with
SiC and diamond are known as third generation semi-conducting material together.GaN material wide, critical breakdown electric field with energy gap
The advantages that height, electron saturation velocities are high, thermal conductivity is high, heterojunction boundary two-dimensional electron gas is high, is next-generation power device
Ideal substitute.
The operating mode of traditional GaN device is mostly depletion device, and in switching mode circuit, there are power consumption height and designs
Complicated problem.In order to meet the commercial demand of GaN power electronic devices, the safety of circuit work is improved, GaN base is enhanced
HEMT (high electron mobility transistor) device has become a current important research direction.
In order to realize enhanced work, the realization of the enhanced HEMT device of GaN base at present one is use p-type barrier layer,
To exhaust the two-dimensional electron gas of grid lower zone, enhanced work is realized.The material layer of the p-type barrier layer in other regions passes through
The method of dry etching removes, relatively high to etching apparatus requirement, and can cause lattice damage, and process repeatability is poor, influences
The stability and reliability of device.There is important researching value and wide application without the etching enhanced HEMT device of GaN base
Foreground.
Invention content
Present invention aims at use p-type AlGaN potential barrier, the material layer of the p-type AlGaN potential barrier other than area of grid
AlGaN oxide layers are formed using the method for oxidation, realize that the enhanced HEMT device of GaN base without etching, the present invention will disclose one
Kind enhanced HEMT device of GaN base and preparation method thereof.
In order to achieve the above objectives, the present invention provides a kind of enhanced HEMT device of GaN base, the enhanced HEMT of GaN base
Device includes substrate, buffer layer, GaN channel layers, AlGaN potential barrier, p-type AlGaN potential barrier, AlGaN oxide layers, passivation layer,
Source and drain metal level and barrier metal layer.
The buffer layer is stacked in the substrate；The GaN channel layers are stacked on the buffer layer：It is described
AlGaN potential barrier is stacked on the GaN channel layers；The p-type AlGaN potential barrier be stacked in the AlGaN potential barrier it
The upper position close to side；The AlGaN oxide layers are stacked on the AlGaN potential barrier, and one side and the p-type
AlGaN potential barrier connects；The Source and drain metal level is stacked in the both sides on the AlGaN potential barrier, and it is close to grid one
Side connects with the AlGaN oxide layers；The passivation layer is stacked on the AlGaN oxide layers；The barrier metal layer is stacked
In the p-type AlGaN potential barrier.
The substrate is one kind in silicon, sapphire, single-crystal silicon carbide substrate.
The buffer layer can be AlN, AlGaN, GaN in one kind or its stack combinations form, the thickness of the buffer layer
Degree is between 1 micron -3 microns.
The thickness of the GaN channel layers is between 1 nanometer -500 nanometers.
The thickness of the AlGaN potential barrier is between 3 angstroms -100 nanometers.
The thickness of the p-type AlGaN potential barrier is between 1 nanometer -100 nanometers；The doping of the p-type AlGaN potential barrier
Element is Mg, and doping concentration is 1 × 1018-1×1020cm-3Between, the AlGaN oxide layers and the p-type AlGaN potential barrier
Middle Al, Ga are identical with the atomic ratio of Mg, and the AlGaN oxide layers are the material layers of the p-type AlGaN potential barrier through peroxidating shape
At；The group of Al is divided into x in the p-type AlGaN potential barrier, and the group of Ga is divided into 1-x, and the value range of x is 0≤x≤1, the p-type
The atomic ratio of Al, Ga, N are x in AlGaN potential barrier：(1-x)：1.
The passivation layer can be silicon nitride, silica or aluminium base, zirconium base, hafnium base, gadolinium base, gallium base, lanthanum base, the oxidation of tantalum base
Object, the thickness of the passivation layer is between 1 nanometer -100 nanometers；
The barrier metal layer can be one or more layers metal group of tantalum nitride, titanium nitride, titanium, nickel, platinum, gold, tungsten or aluminium
It closes, the thickness of the barrier metal layer is between 1 nanometer -1 micron.
The Source and drain metal level can be nickel, germanium, gold, palladium, titanium, copper, platinum, tungsten, aluminium one or more layers metallic combination and
At the thickness of the Source and drain metal level is between 1 nanometer -1 micron.
In addition, the present invention also provides a kind of preparation method of the aforementioned enhanced HEMT device of GaN base, the method includes such as
Lower step：
Step 1：Buffer layer described in extension, the GaN channel layers, the AlGaN potential barrier, P successively over the substrate
Type AlGaN single crystalline layers one；
Step 2：The material layer of the p-type AlGaN single crystalline layers one at source and drain Ohmic contact is removed, it is mono- to form p-type AlGaN
Crystal layer two evaporates metal ohmic contact, forms the Source and drain metal level；
Step 3：Evaporate the barrier metal layer；
Step 4：The material layer of the p-type AlGaN single crystalline layers two between the Source and drain metal level and the barrier metal layer is aoxidized,
Form the AlGaN oxide layers and the p-type AlGaN potential barrier；
Step 5：The material layer of the passivation layer is deposited, and forms the passivation by way of photoetching, etching or corrosion
Layer.
It is to use MBE (molecular beam epitaxy) or MOCVD (Metal Organic Chemical Vapor Deposition) in the step 1
Mode extension described in buffer layer, the GaN channel layers, the AlGaN potential barrier, the p-type AlGaN single crystalline layers one.
In the step 2, the epitaxial substrate first obtained with organic chemical reagent cleaning step 1 is needed, using high selection
The alkaline solution of ratio erodes the material layer of the p-type AlGaN single crystalline layers one of source and drain ohmic contact regions, to avoid dry etching
Technique ion dam age caused by source and drain ohmic contact regions and process repeatability problem, with diluted before source and drain evaporation of metal
The natural oxide of hydrochloric acid or phosphoric acid removal sample surfaces.
In the step 3, the barrier metal layer is formed by the way of photoetching, evaporation, etching or stripping, in grid gold
Belong to the preceding natural oxide that sample surfaces are removed with diluted hydrochloric acid or phosphoric acid of layer evaporation.
In the step 4, it is masking with the Source and drain metal level and the barrier metal layer, utilizes ozone, oxygen or oxygen etc.
Gas ions aoxidize the material layer of the p-type AlGaN single crystalline layers two between the Source and drain metal level and the barrier metal layer, shape
At the AlGaN oxide layers；One layer of dielectric layer can be deposited in sample surfaces before oxidation, for controlling oxidation in oxidation process
Rate, reduction surface damage etc., the dielectric layer, which can remove, after the completion of oxidation to retain；The Source and drain metal level and institute
Stating the material layer of the p-type AlGaN single crystalline layers two between barrier metal layer can all aoxidize, can also with the AlGaN
There are a small amount of remnants in barrier layer interface；After generating the AlGaN oxide layers, the GaN ditches below the AlGaN oxide layers
Channel layer and AlGaN potential barrier interface formation high density two-dimensional electron gas, and the GaN channel layers below area of grid
With the two-dimensional electron gas of the AlGaN potential barrier interface since the presence of the p-type AlGaN potential barrier is spent condition.
The deposition method of the material layer of the passivation layer includes atomic layer deposition, plasma reinforced chemical vapour deposition, magnetic
One or more deposition methods in control sputtering, molecular beam epitaxy or metal organic chemical vapor deposition.
Advantages of the present invention and technique effect are as follows：
The enhanced HEMT device of GaN base has following compared to traditional enhanced HEMT device of p-type barrier layer GaN base
Advantage：1. in preparation method, the p-type AlGaN single crystalline layers other than p-type AlGaN potential barrier need not be performed etching, be avoided
The problems such as etching lattice damage and poor process repeatability；2. oxidation process is masking, the generation of AlGaN oxide layers with barrier metal layer
It is self aligned；3. AlGaN oxide layers can have good as the passivation layer of GaN base HEMT with AlGaN potential barrier
MOS interfacial characteristics.
Description of the drawings
Fig. 1 is the structural schematic diagram of the enhanced HEMT device of GaN base provided by the present invention；
Fig. 2 buffer layer, the GaN channel layers, the AlGaN potential barrier, p-type AlGaN monocrystalline described in extension on substrate
Structural schematic diagram after layer；
Fig. 3 is the structural schematic diagram to be formed after the Source and drain metal level；
Fig. 4 is the structural schematic diagram after the deposition barrier metal layer；
Fig. 5 is the structural schematic diagram to be formed after the AlGaN oxide layers；
Wherein：
1 it is substrate, 2 be buffer layer, 3 be GaN channel layers, 4 be AlGaN potential barrier, 5 be p-type AlGaN potential barrier, 6 is source
Leakage metal layer, 7 be barrier metal layer, 8 be AlGaN oxide layers, 9 be passivation layer, 5a is p-type AlGaN single crystalline layers one, 5b is p-type
AlGaN single crystalline layers two.
Specific implementation mode
To keep the purpose of the present invention, content and advantage clearer, with reference to the accompanying drawings and examples, to the present invention's
Specific implementation mode is described in further detail.The following examples are only intended to illustrate the technical solution of the present invention more clearly,
And not intended to limit the protection scope of the present invention.
The present embodiment specifically describes a kind of enhanced HEMT device of GaN base provided by the present invention and preparation method thereof.
As shown in Figure 1, the enhanced HEMT device of GaN base that the present embodiment is provided, by substrate 1, buffer layer 2, GaN raceway grooves
Layer 3, AlGaN potential barrier 4, p-type AlGaN potential barrier 5, Source and drain metal level 6, barrier metal layer 7, AlGaN oxide layers 8 and passivation layer 9
Composition.
The buffer layer 2 is stacked on the substrate 1；The GaN channel layers 3 are stacked on the buffer layer 2：Institute
AlGaN potential barrier 4 is stated to be stacked on the GaN channel layers 3；The p-type AlGaN potential barrier 5 is stacked in the AlGaN potential barriers
Close to the position of side (the present embodiment is left-of-center position) on layer 4, since GaN device is generally as mesohigh device
Part, this unsymmetric structure can increase drain breakdown voltage, and deviateing intermediate distance can be according to device property requirement come really
It is fixed；The AlGaN oxide layers 8 are stacked on the AlGaN potential barrier 4, and one side and 5 phase of p-type AlGaN potential barrier
It connects；The Source and drain metal level 6 is stacked in the both sides on the AlGaN potential barrier 4, and its close to grid side with it is described
AlGaN oxide layers 8 connect；The passivation layer 9 is stacked on the AlGaN oxide layers 8；The barrier metal layer 7 is stacked in institute
It states in p-type AlGaN potential barrier 5.
The substrate 1 is silicon.
The buffer layer 2 is AlN/AlGaN/GaN laminated construction, and the thickness of the buffer layer 2 is 1.5 microns.
The thickness of the GaN channel layers 3 is 50 nanometers.
The thickness of the AlGaN potential barrier 4 is 30 nanometers.
The thickness of the p-type AlGaN potential barrier 5 is 10 nanometers；The doped chemical of the p-type AlGaN potential barrier 5 is Mg,
Doping concentration is 5 × 1019cm-3, the atomic ratio of Al, Ga and Mg in the AlGaN oxide layers 8 and the p-type AlGaN potential barrier 5
Identical, the group of the p-type AlGaN potential barrier Ga is divided into 0, and the AlGaN oxide layers 8 are the materials of the p-type AlGaN potential barrier 5
The bed of material is formed through peroxidating；
The passivation layer 9 is silicon nitride, and the thickness of the passivation layer 9 is 30 nanometers.
The barrier metal layer 7 is Ni/Au laminations, and the thickness of the barrier metal layer 7 is 200 nanometers.
The Source and drain metal level 6 is Ti/Al/Ni/Au laminations, and the thickness of the Source and drain metal level 6 is 200 nanometers.
In addition, the present embodiment also provides a kind of preparation method of the enhanced HEMT device of aforementioned GaN base, the method includes
Following steps：
Step 1：As shown in Fig. 2, buffer layer 2, the GaN channel layers 3 described in extension, described successively on the substrate 1
AlGaN potential barrier 4, one 5a of p-type AlGaN single crystalline layers；
Step 2：As shown in figure 3, one 5a of p-type AlGaN single crystalline layers at removal source and drain Ohmic contact, forms the P
Two 5b of type AlGaN single crystalline layers evaporates metal ohmic contact, forms the Source and drain metal level 6；
Step 3：As shown in figure 4, evaporating the barrier metal layer 7；
Step 4：As shown in figure 5, aoxidizing the p-type AlGaN monocrystalline between the Source and drain metal level 6 and the barrier metal layer 7
The material layer of two 5b of layer, forms the AlGaN oxide layers 8 and the p-type AlGaN potential barrier 5；
Step 5：As shown in Figure 1, the material layer of the passivation layer 9 is deposited, and the shape by way of photoetching, etching or corrosion
At the passivation layer 9；
It is buffer layer 2 described in extension, the GaN channel layers 3, the AlGaN by the way of MOCVD in the step 1
Barrier layer 4, one 5a of p-type AlGaN single crystalline layers.
In the step 2, the epitaxial substrate first obtained with organic chemical reagent cleaning step 1 is needed, using high selection
The alkaline solution of ratio erodes the material layer of one 5a of p-type AlGaN single crystalline layers of source and drain ohmic contact regions, is carved to avoid dry method
Etching technique ion dam age caused by source and drain ohmic contact regions and process repeatability problem, with dilution before source and drain evaporation of metal
Hydrochloric acid or phosphoric acid removal sample surfaces natural oxide.
In the step 3, the barrier metal layer 7 is formed by the way of photoetching, evaporation, etching or stripping, in the grid
Metal layer 7 removes the natural oxide of sample surfaces with diluted hydrochloric acid or phosphoric acid before evaporating.
In the step 4, it is masking with the Source and drain metal level 6 and the barrier metal layer 7, utilizes ozone, oxygen or oxygen
Plasma aoxidizes the material of two 5b of p-type AlGaN single crystalline layers between the Source and drain metal level 6 and the barrier metal layer 7
The bed of material forms the AlGaN oxide layers 8；One layer of dielectric layer is deposited in sample surfaces before oxidation, for being controlled in oxidation process
Oxidation rate, reduction surface damage etc., remove after the completion of oxidation；Institute between the Source and drain metal level 6 and the barrier metal layer 7
The material layer for stating two 5b of p-type AlGaN single crystalline layers all aoxidizes；After generating the AlGaN oxide layers 8, the AlGaN oxide layers
The GaN channel layers 3 of 8 lower sections and 4 interface of AlGaN potential barrier formation high density two-dimensional electron gas, and area of grid
The GaN channel layers 3 of lower section are with the two-dimensional electron gas of 4 interface of the AlGaN potential barrier due to the p-type AlGaN potential barriers
The presence of layer 5 is spent condition.
The deposition method of the material layer of the passivation layer is plasma reinforced chemical vapour deposition.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of enhanced HEMT device of GaN base, which is characterized in that including substrate, buffer layer, GaN channel layers, AlGaN potential barriers
Layer, p-type AlGaN potential barrier, AlGaN oxide layers, passivation layer, Source and drain metal level and barrier metal layer；The buffer layer is stacked in institute
State substrate；The GaN channel layers are stacked on the buffer layer：The AlGaN potential barrier is stacked in the GaN raceway grooves
On layer；The p-type AlGaN potential barrier is stacked in the position close to side on the AlGaN potential barrier；The AlGaN oxygen
Change layer to be stacked on the AlGaN potential barrier, and one side connects with the p-type AlGaN potential barrier；The Source and drain metal level
The both sides on the AlGaN potential barrier are stacked in, and it connects close to grid side with the AlGaN oxide layers；It is described blunt
Change layer to be stacked on the AlGaN oxide layers；The barrier metal layer is stacked in the p-type AlGaN potential barrier.
2. a kind of enhanced HEMT device of GaN base as described in claim 1, which is characterized in that the p-type AlGaN potential barrier
Doped chemical be Mg, doping concentration is 1 × 1018-1×1020cm-3Between；The AlGaN oxide layers and the p-type AlGaN
Al, Ga are identical with the atomic ratio of Mg in barrier layer, and AlGaN oxide layers are the material layers of the p-type AlGaN potential barrier through peroxidating
It is formed.
3. a kind of enhanced HEMT device of GaN base as described in claim 1, which is characterized in that the p-type AlGaN potential barrier
The group of middle Al is divided into x, and the group of Ga is divided into 1-x, and the value range of x is 0≤x≤1；Al, Ga, N in the p-type AlGaN potential barrier
Atomic ratio be x：(1-x)：1.
4. a kind of enhanced HEMT device of GaN base as described in claim 1, which is characterized in that the p-type AlGaN potential barrier
Thickness between 1-100 nanometers, the AlGaN oxide layers be same thickness the p-type AlGaN potential barrier material layer warp
Peroxidating forms.
5. the preparation method of the enhanced HEMT device of GaN base described in a kind of claim 1, which is characterized in that include the following steps：
Step 1：Buffer layer described in extension, the GaN channel layers, the AlGaN potential barrier, p-type AlGaN are mono- successively on substrate
Crystal layer one；
Step 2：The material layer of the p-type AlGaN single crystalline layers one at source and drain Ohmic contact is removed, p-type AlGaN single crystalline layers are formed
Two, metal ohmic contact is evaporated, the Source and drain metal level is formed；
Step 3：Evaporate the barrier metal layer；
Step 4：The material layer of the p-type AlGaN single crystalline layers two between the Source and drain metal level and the barrier metal layer is aoxidized,
Form the AlGaN oxide layers and the p-type AlGaN potential barrier；
Step 5：The material layer of the passivation layer is deposited, and forms the passivation layer by way of photoetching, etching or corrosion.
6. the preparation method of the enhanced HEMT device of GaN base as claimed in claim 5, which is characterized in that in the step 1,
Due to the presence of the p-type AlGaN single crystalline layers one, the Two-dimensional electron of the GaN channel layers and the AlGaN potential barrier interface
Gas is spent condition.
7. the preparation method of the enhanced HEMT device of GaN base as claimed in claim 5, which is characterized in that in the step 2,
The material layer that the p-type AlGaN single crystalline layers one of source and drain ohmic contact regions are eroded using the alkaline solution of high selectivity, to keep away
Exempt from dry etch process ion dam age caused by source and drain ohmic contact regions and process repeatability problem.
8. the preparation method of the enhanced HEMT device of GaN base as claimed in claim 5, which is characterized in that in the step 4,
It is masking with the Source and drain metal level and the barrier metal layer, the source and drain is aoxidized using ozone, oxygen or oxygen plasma
The material layer of the p-type AlGaN single crystalline layers two between metal layer and the barrier metal layer, forms the AlGaN oxide layers.
9. the preparation method of the enhanced HEMT device of GaN base as claimed in claim 5, which is characterized in that in the step 4,
The material layer of the p-type AlGaN single crystalline layers two between Source and drain metal level described in direct oxidation and the barrier metal layer, Huo Zhe
One layer of dielectric layer is deposited in sample surfaces before oxidation, for controlling oxidation rate in oxidation process, reducing surface damage, has been aoxidized
The dielectric layer is removed or retained after.
10. the preparation method of the enhanced HEMT device of GaN base as claimed in claim 5, which is characterized in that in the step 4,
The material layer of the p-type AlGaN single crystalline layers two between the Source and drain metal level and the barrier metal layer all aoxidizes, Huo Zhe
Have a small amount of remnants with the AlGaN potential barrier interface, the GaN channel layers below the AlGaN oxide layers with it is described
AlGaN potential barrier interface forms high density two-dimensional electron gas.
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