CN108369985B - 防反射材料 - Google Patents

防反射材料 Download PDF

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Publication number
CN108369985B
CN108369985B CN201780004775.8A CN201780004775A CN108369985B CN 108369985 B CN108369985 B CN 108369985B CN 201780004775 A CN201780004775 A CN 201780004775A CN 108369985 B CN108369985 B CN 108369985B
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China
Prior art keywords
group
resin composition
porous filler
curable
epoxy
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Active
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CN201780004775.8A
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English (en)
Chinese (zh)
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CN108369985A (zh
Inventor
高林尚史
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Daicel Corp
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Daicel Corp
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/22—Expanded, porous or hollow particles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/22—Expanded, porous or hollow particles
    • C08K7/24—Expanded, porous or hollow particles inorganic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/013—Additives applied to the surface of polymers or polymer particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
CN201780004775.8A 2016-01-15 2017-01-11 防反射材料 Active CN108369985B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2016006638 2016-01-15
JP2016-006638 2016-01-15
JP2016-173980 2016-09-06
JP2016173980 2016-09-06
PCT/JP2017/000666 WO2017122691A1 (ja) 2016-01-15 2017-01-11 反射防止材

Publications (2)

Publication Number Publication Date
CN108369985A CN108369985A (zh) 2018-08-03
CN108369985B true CN108369985B (zh) 2022-04-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780004775.8A Active CN108369985B (zh) 2016-01-15 2017-01-11 防反射材料

Country Status (5)

Country Link
JP (1) JP7127989B2 (ja)
KR (1) KR20180103862A (ja)
CN (1) CN108369985B (ja)
TW (1) TWI739790B (ja)
WO (1) WO2017122691A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117849914A (zh) * 2016-10-11 2024-04-09 株式会社大赛璐 抗反射材料
RU2020125210A (ru) * 2018-01-23 2022-01-31 Дау Силиконз Корпорейшн Связующая композиция и ее применение
CN114262530A (zh) * 2022-01-06 2022-04-01 山西日盛达太阳能科技股份有限公司 一种减反射镀膜溶液、制备方法和光伏玻璃及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102544331A (zh) * 2010-12-28 2012-07-04 日亚化学工业株式会社 发光装置
CN102796413A (zh) * 2011-05-20 2012-11-28 东友精细化工有限公司 防眩性防反射涂层用组合物、使用该组合物的防眩性防反射薄膜、偏光板以及显示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4010299B2 (ja) * 2001-06-20 2007-11-21 日亜化学工業株式会社 半導体発光装置とその形成方法
US7119031B2 (en) * 2004-06-28 2006-10-10 Micron Technology, Inc. Methods of forming patterned photoresist layers over semiconductor substrates
CN100394215C (zh) * 2005-05-26 2008-06-11 财团法人工业技术研究院 三维纳米多孔薄膜及其制造方法
US7795625B2 (en) 2006-01-16 2010-09-14 Panasonic Corporation Semiconductor light-emitting device
JP5154773B2 (ja) * 2006-07-19 2013-02-27 リンテック株式会社 反射防止フィルム
JP2009037046A (ja) 2007-08-02 2009-02-19 Nof Corp 液晶ディスプレイ用防眩性フィルム及びそれを備える液晶ディスプレイ
JP2011068811A (ja) * 2009-09-28 2011-04-07 Sekisui Chem Co Ltd 光半導体装置用封止剤及び光半導体装置
CN103459469B (zh) 2011-03-30 2015-09-09 旭化成化学株式会社 有机聚硅氧烷、其制造方法和含有有机聚硅氧烷的固化性树脂组合物
EP2800154A4 (en) * 2011-12-26 2015-06-10 Konica Minolta Inc SEALING AGENT FOR LED DEVICE, LED DEVICE, AND METHOD FOR PRODUCING LED DEVICE
TW201509962A (zh) * 2012-06-15 2015-03-16 Mitsubishi Rayon Co 活性能量線硬化性樹脂組成物以及光透射性物品活性能量線硬化性樹脂組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102544331A (zh) * 2010-12-28 2012-07-04 日亚化学工业株式会社 发光装置
CN102796413A (zh) * 2011-05-20 2012-11-28 东友精细化工有限公司 防眩性防反射涂层用组合物、使用该组合物的防眩性防反射薄膜、偏光板以及显示装置

Also Published As

Publication number Publication date
JP7127989B2 (ja) 2022-08-30
KR20180103862A (ko) 2018-09-19
TWI739790B (zh) 2021-09-21
CN108369985A (zh) 2018-08-03
TW201731986A (zh) 2017-09-16
WO2017122691A1 (ja) 2017-07-20
JPWO2017122691A1 (ja) 2018-11-01

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