CN108368341A - 有机硅树脂组合物及半导体发光元件用封装材料 - Google Patents
有机硅树脂组合物及半导体发光元件用封装材料 Download PDFInfo
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- CN108368341A CN108368341A CN201680074185.8A CN201680074185A CN108368341A CN 108368341 A CN108368341 A CN 108368341A CN 201680074185 A CN201680074185 A CN 201680074185A CN 108368341 A CN108368341 A CN 108368341A
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- resin composition
- silicon
- organosilicon resin
- silicon atoms
- organic siliconresin
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- 239000011342 resin composition Substances 0.000 title claims abstract description 175
- 239000000463 material Substances 0.000 title claims abstract description 112
- 239000004065 semiconductor Substances 0.000 title claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 144
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 99
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- 125000005448 ethoxyethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
- C08G77/08—Preparatory processes characterised by the catalysts used
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K13/00—Use of mixtures of ingredients not covered by one single of the preceding main groups, each of these compounds being essential
- C08K13/08—Ingredients of unknown constitution and ingredients covered by the main groups C08K3/00 - C08K9/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Electromagnetism (AREA)
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| JP2015-248969 | 2015-12-21 | ||
| JP2015248969 | 2015-12-21 | ||
| PCT/JP2016/087244 WO2017110623A1 (ja) | 2015-12-21 | 2016-12-14 | シリコーン樹脂組成物および半導体発光素子用封止材 |
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| CN112054109B (zh) * | 2020-09-11 | 2022-09-27 | 天津中环电子照明科技有限公司 | 一种高光提取效率且耐光老化的紫外led封装胶及封装结构 |
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| CN103524741A (zh) * | 2013-09-18 | 2014-01-22 | 烟台德邦先进硅材料有限公司 | 一种甲基乙烯基mq硅树脂合成方法 |
| CN104428372A (zh) * | 2012-07-18 | 2015-03-18 | 道康宁公司 | 有机硅氧烷组合物 |
| JP2015143294A (ja) * | 2014-01-31 | 2015-08-06 | 住友化学株式会社 | Ｕｖ−ｌｅｄ用ポリシルセスキオキサン系封止材組成物及びそのためのアセチルアセトネート系触媒の使用 |
| JP2015151507A (ja) * | 2014-02-18 | 2015-08-24 | 住友化学株式会社 | シリコーン樹脂組成物 |
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| JP4519869B2 (ja) * | 2007-03-05 | 2010-08-04 | 株式会社東芝 | 半導体装置 |
| JP2009292855A (ja) * | 2008-06-02 | 2009-12-17 | Jsr Corp | 光半導体封止用重合体およびその製造方法、ならびに光半導体封止用組成物 |
| JP2012057000A (ja) * | 2010-09-07 | 2012-03-22 | Shin-Etsu Chemical Co Ltd | シリコーン樹脂組成物、半導体装置の封止材、及び半導体装置 |
| JP6146856B2 (ja) | 2012-03-06 | 2017-06-14 | 公立大学法人首都大学東京 | ポリシルセスキオキサン液体及びポリシルセスキオキサンガラスならびにその製造方法 |
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- 2016-12-14 KR KR1020187020712A patent/KR20180097664A/ko unknown
- 2016-12-19 TW TW105142076A patent/TW201726814A/zh unknown
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104428372A (zh) * | 2012-07-18 | 2015-03-18 | 道康宁公司 | 有机硅氧烷组合物 |
| CN103524741A (zh) * | 2013-09-18 | 2014-01-22 | 烟台德邦先进硅材料有限公司 | 一种甲基乙烯基mq硅树脂合成方法 |
| JP2015143294A (ja) * | 2014-01-31 | 2015-08-06 | 住友化学株式会社 | Ｕｖ−ｌｅｄ用ポリシルセスキオキサン系封止材組成物及びそのためのアセチルアセトネート系触媒の使用 |
| JP2015151507A (ja) * | 2014-02-18 | 2015-08-24 | 住友化学株式会社 | シリコーン樹脂組成物 |
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| JP2017115145A (ja) | 2017-06-29 |
| TW201726814A (zh) | 2017-08-01 |
| KR20180097664A (ko) | 2018-08-31 |
| WO2017110623A1 (ja) | 2017-06-29 |
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