CN108321255B - 应用于多晶黑硅太阳能电池的低压扩散工艺 - Google Patents
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Abstract
本发明涉及一种应用于多晶黑硅太阳能电池的低压扩散工艺，其特征是，包括以下步骤：（1）硅片进管；（2）恒温；（3）低温氧化，在硅片表面生成一层薄的氧化层，使后续磷源沉积更均匀；（4）低温淀积，在硅片表面均匀沉积磷源；（5）高温推进，使磷源向硅片体内扩散；所述高温推进的温度为820‑850℃，氮气流量为1000‑3000sccm，干氧气为0‑1000sccm，炉内压强50‑150mbar，时间10‑20分钟；（6）二次扩散，二次扩散的温度为800‑850℃，氮气流量为1000‑3000sccm，携源氮气为0‑400sccm，干氧气为0‑1000sccm，炉内压强50‑150mbar，时间2‑10分钟；（7）降温；（8）充氮，使管内压力达到大气压，以便炉门开启；（9）出管。本发明改善了多晶黑硅扩散后方块电阻的均匀性。
Description
技术领域
本发明涉及一种应用于多晶黑硅太阳能电池的低压扩散工艺，属于光电技术领域。
背景技术
降低成本、提高太阳电池转换效率是光伏行业可以逐渐取代传统能源的关键。目前市场上光伏发电产品仍以多晶太阳电池组件为主，降低多晶太阳电池成本、提高多晶太阳电池转换效率是降本关键。多晶硅片分为砂浆切割硅片、金刚线切割硅片。其中，多晶金刚线切割硅片具有切割速度快、相比于砂浆切割线损更小、损伤层更薄、更环保、成本低等优势，市场份额逐年提升，逐步替代砂浆切割硅片，金刚线切割硅片降低了硅片成本，将成为行业主流，但是使用金刚线切割的多晶太阳电池表面反射率高制约了电池效率的提升，制绒后表面有色差影响了金刚线切割多晶太阳电池的良品率，而湿法黑硅技术成功解决了这些难题，既能提高金刚线切割多晶太阳电池的转换效率、良品率，又能降低电池成本。如图1所示，为常规砂浆硅片绒面结构SEM照片(放大5000倍)。如图2所示，为金刚线多晶黑硅绒面结构SEM照片(放大5000倍)。如图3所示，为黑硅电池与常规电池反射率对比。
湿法黑硅中的金属催化化学腐蚀法采用银、铜等电负性高于硅的金属颗粒在化学腐蚀液的作用下在硅片表面形成多孔结构，从而降低硅片表面反射率，工艺简单，成本低，更适用于工业生产，黑硅纳米绒面可使多晶效率提升0.2-0.3％(绝对值)。
传统的太阳能电池扩散采用常压扩散工艺，扩散过程中，在扩散炉内压力保持常压或微正压。随着高效晶硅太阳电池的发展，扩散结深的不断变浅，常压扩散已难以满足晶体硅太阳能电池高效、低成本发展的技术要求。常压扩散条件下，由于扩散源分布不均匀，导致局部扩散源存在较大的浓度差，扩散后硅片不同区域的方块电阻差异大，方块电阻均匀性差。黑硅绒面为纳米孔结构，常规多晶绒面为微米级蠕虫结构，因此黑硅比表面积大于常规多晶，由于黑硅绒面结构特殊性，在前表面磷扩散制备PN结时表面杂质浓度高，俄歇复合严重，更容易形成扩散“死层”。由于黑硅纳米绒面微结构的存在，使得扩散后方块电阻的均匀性变得更差。因此，扩散制备PN结的质量对于具有纳米绒面的黑硅太阳电池的转换效率具有重要影响。
发明内容
本发明的目的是克服现有技术中存在的不足，提供一种应用于多晶黑硅太阳能电池的低压扩散工艺，改善了多晶黑硅扩散后方块电阻的均匀性。
按照本发明提供的技术方案，所述应用于多晶黑硅太阳能电池的低压扩散工艺，其特征是，包括以下步骤：
(1)硅片进管：管内温度700-750℃，氮气流量1000-3000sccm；
(2)恒温：温度780-800℃，氮气流量1000-3000sccm，炉内压强50-150mbar，时间10-20分钟；
(3)低温氧化，在硅片表面生成一层薄的氧化层，使后续磷源沉积更均匀；所述低温氧化温度为780-800℃，氮气流量1000-3000sccm，炉内压强50-150mbar，干氧气为0-1000sccm，时间2-5分钟；
(4)低温淀积，在硅片表面均匀沉积磷源；所述低温淀积的温度为780-800℃，氮气流量1000-3000sccm，携源氮气为0-400sccm，干氧气为0-1000sccm，炉内压强50-150mbar，时间5-20分钟；
(5)高温推进，使磷源向硅片体内扩散；所述高温推进的温度为820-850℃，氮气流量为1000-3000sccm，干氧气为0-1000sccm，炉内压强50-150mbar，时间10-20分钟；
(6)二次扩散，增加硅片表面掺杂浓度，降低浆料与硅片的欧姆接触电阻；所述二次扩散的温度为800-850℃，氮气流量为1000-3000sccm，携源氮气为0-400sccm，干氧气为0-1000sccm，炉内压强50-150mbar，时间2-10分钟；
(7)降温：温度600-750℃，氮气流量为1000-3000sccm，干氧气为0-1000sccm，炉内压强50-150mbar，时间10-30分钟；
(8)充氮，使管内压力达到大气压，以便炉门开启；所述充氮步骤的温度为600-750℃，氮气流量为1000-3000sccm，压强为常压；
(9)出管：管内温度700-750℃，氮气流量为1000-3000sccm，压强为常压。
进一步地，在所述步骤(5)高温推进和步骤(6)二次扩散之间还包括降温步骤以降低二次扩散磷源沉积量：温度800-820℃，大氮流量1000-3000sccm，炉内压强50-150mbar，时间5-10分钟。
进一步地，在所述步骤(6)二次扩散和步骤(7)降温步骤之间还包括恒温推进步骤：温度800-850℃，大氮流量1000-3000sccm，干氧0-1000sccm，炉内压强50-150mbar，时间2-10分钟。
进一步地，所述硅片为多晶金刚线切割湿法黑硅，具有纳米绒面，硅片电阻率1-3Ω·cm，硅片厚度180-220μm。
本发明具有以下优点：
(1)本发明采用低压两步扩散法，促使磷源在整个纳米结构内具有相同的浓度分布，改善了多晶黑硅扩散后方块电阻的均匀性；
(2)本发明采用低压两步扩散法，在第一步扩散基础上增加二次扩散，增加了表面掺杂浓度，降低了电极与硅的欧姆接触电阻，有效提升了黑硅太阳电池的填充因子。
附图说明
图1为常规砂浆硅片绒面结构SEM照片(放大5000倍)。
图2为金刚线多晶黑硅绒面结构SEM照片(放大5000倍)。
图3为黑硅电池与常规电池反射率对比。
图4为低压扩散和常压扩散的多晶黑硅电池效率对比图。
具体实施方式
下面结合具体附图和实施例对本发明作进一步说明。
本发明实施例中所述的小氮为携源氮气，大氮为氮气，干氧为干氧气。
实施例1：
选择156.75mm*156.75mm的P型金刚线切割多晶硅片为基体材料，电阻率3Ω·cm，经过碱抛、酸洗、沉银、挖孔、脱银、扩孔、碱洗、酸洗、水洗、烘干制备得到绒面，制绒减薄量0.38g，纳米绒面孔径500nm，制绒后硅片表面反射率19.5％。将制绒后的黑硅片上料至扩散石英舟内准备扩散。
扩散工艺如表1：
表1
根据实施例1的工艺参数扩散后的方块电阻值。在炉口、炉中、炉尾分别抽取2片，每片上测试9点的方块电阻值，计算方块电阻均值和方阻不均匀性。
不均匀性计算公式：方阻不均匀性＝(最大值-最小值)/(最大值+最小值)，结构如表2所示。
表2
实施例1采用的低压扩散工艺的硅片与现有技术中正常扩散工艺的硅片，电性能参数对比如表3所示。
表3
将低压扩散和常压扩散的多晶黑硅电池效率进行比较，其结果如图4所示，采用低压扩散能够对多晶黑硅电池效率得到有效地提升。
实施例2：
选择156.75mm*156.75mm的P型金刚线切割多晶硅片为基体材料，电阻率2Ω·cm，经过碱抛、酸洗、沉银、挖孔、脱银、扩孔、碱洗、酸洗、水洗、烘干制备得到绒面，制绒减薄量0.45g，纳米绒面孔径700nm，制绒后硅片表面反射率21.0％。制绒后的黑硅片上料至扩散石英舟内准备扩散。
扩散工艺如表4所示。
表4
根据实施例2的工艺参数扩散后的方块电阻值。在炉口、炉中、炉尾分别抽取2片，每片上测试9点的方块电阻值，计算方块电阻均值和方阻不均匀性。
不均匀性计算公式：方阻不均匀性＝(最大值-最小值)/(最大值+最小值)，结果如表5所示。
表5
Claims (1)
1.一种应用于多晶黑硅太阳能电池的低压扩散工艺，其特征是，包括以下步骤：
（1）硅片进管：管内温度700-750℃，氮气流量1000-3000sccm；
（2）恒温：温度780-800℃，氮气流量1000-3000sccm，炉内压强50-150mbar，时间10-20分钟；
（3）低温氧化，在硅片表面生成一层薄的氧化层，使后续磷源沉积更均匀；所述低温氧化温度为780-800℃，氮气流量1000-3000sccm，炉内压强50-150mbar，干氧气为200-1000sccm，时间2-5分钟；
（4）低温淀积，在硅片表面均匀沉积磷源；所述低温淀积的温度为780-800℃，氮气流量1000-3000sccm，携源氮气为200-400sccm，干氧气为200-1000sccm，炉内压强50-150mbar，时间5-20分钟；
（5）高温推进，使磷源向硅片体内扩散；所述高温推进的温度为820-850℃，氮气流量为1000-3000sccm，干氧气为0-1000sccm，炉内压强50-150mbar，时间10-20分钟；
（6）二次扩散，增加硅片表面掺杂浓度，降低浆料与硅片的欧姆接触电阻；所述二次扩散的温度为800-850℃，氮气流量为1000-3000sccm，携源氮气为200-400sccm，干氧气为200-1000sccm，炉内压强50-150mbar，时间2-10分钟；
（7）降温：温度600-750℃，氮气流量为1000-3000sccm，干氧气为0-1000sccm，炉内压强50-150mbar，时间10-30分钟；
（8）充氮，使管内压力达到大气压，以便炉门开启；所述充氮步骤的温度为600-750℃，氮气流量为1000-3000sccm，压强为常压；
（9）出管：管内温度700-750℃，氮气流量为1000-3000sccm，压强为常压；
在所述步骤（5）高温推进和步骤（6）二次扩散之间还包括降温步骤以降低二次扩散磷源沉积量：温度800-820℃，大氮流量1000-3000sccm，炉内压强50-150mbar，时间5-10分钟；
在所述步骤（6）二次扩散和步骤（7）降温步骤之间还包括恒温推进步骤：温度800-850℃，大氮流量1000-3000sccm，干氧0-1000sccm，炉内压强50-150mbar，时间2-10分钟；
所述硅片为多晶金刚线切割湿法黑硅，具有纳米绒面，硅片电阻率1-3Ω•cm，硅片厚度180-220μm。
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