CN108291325A - 基板保持装置 - Google Patents
基板保持装置 Download PDFInfo
- Publication number
- CN108291325A CN108291325A CN201580085077.6A CN201580085077A CN108291325A CN 108291325 A CN108291325 A CN 108291325A CN 201580085077 A CN201580085077 A CN 201580085077A CN 108291325 A CN108291325 A CN 108291325A
- Authority
- CN
- China
- Prior art keywords
- chuck
- cupuliform
- sealing element
- substrate
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 238000007789 sealing Methods 0.000 claims abstract description 99
- 239000000463 material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 claims 1
- 239000008151 electrolyte solution Substances 0.000 abstract description 9
- 239000003792 electrolyte Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- -1 polypropylene Polymers 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000639 Spring steel Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/08—Rinsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electroplating Methods And Accessories (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Paints Or Removers (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)
Abstract
本发明公开了一种基板保持装置,包括杯形夹盘(101)、密封件(111)、夹盘板(102)和竖直驱动装置(103)。密封件(111)包括底部(1111)、外壁(1112)和内壁(1114)。内壁(1114)设有唇形密封部(1115)。密封件(111)的底部(1111)和外壁(1112)分别包裹住杯形夹盘(101)的基部(1011)的底壁和侧壁的外表面。唇形密封部(1115)包裹杯形夹盘(101)的支撑部(1014)以密封基板(113)正面的边缘。该装置防止基板正面的边缘、基板的背面及杯形夹盘接触电解液溶液。
Description
技术领域
本发明涉及一种基板保持装置,尤其涉及一种具有密封件的基板保持装置,该密封件包裹住杯形夹盘,当基板固持在该基板保持装置上并被置于化学溶液中进行工艺加工,例如浸没在电解液中电镀,该密封件保护杯形夹盘和基板正面的边缘及基板背面。
背景技术
在集成电路制造行业,金属电镀/沉积工艺越来越普及。除了后道工序中的铜互连结构,在先进晶圆级封装领域,许多技术也使用到金属电镀工艺,例如铜柱、RDL(再分布层)、TSV和转接板。
对于电镀装置来说,固持基板的基板保持装置十分重要。基板保持装置的接触环应该均匀接触基板正面的种子层,同时,该接触环不能直接与电解液接触,因此,利用密封圈来隔离,使电解液无法到达基板正面的边缘,否则,基板正面的边缘处将被镀上金属,沉积在基板上的金属薄膜的均匀性将变得很糟。
专利号US 8,172,992 B2揭示了一种用于金属沉积工艺的夹盘。夹盘的底板,包括边缘密封件,由坚硬的具有疏水涂层的耐腐蚀材料制成,例如聚酰胺-酰亚胺(PAI)和聚四氟乙烯(PTFE),但涂层的厚度非常有限,通常,涂层的厚度为几微米。因此,长时间使用后,在频繁的打开和关闭夹盘的过程中,由于与基板之间的摩擦,涂层会被破坏,导致密封效果变差,整个夹盘需要更换,夹盘的使用寿命太短,而且频繁的更换新夹盘的费用很高,因此,需要有新的发明来降低大批量生产的成本。
发明内容
因此,本发明的目的在于提供一种基板保持装置,该装置包括杯形夹盘、密封件、夹盘板和竖直驱动装置。杯形夹盘包括基部,基部具有底壁、侧壁的外表面和侧壁的内表面,基部的侧壁的内表面倾斜向上突出形成支撑基板正面边缘的支撑部。密封件包括底部、外壁和内壁,内壁设有唇形密封部,密封件的底部和外壁分别包裹住杯形夹盘基部的底壁和侧壁的外表面,唇形密封部包裹杯形夹盘的支撑部以密封基板正面的边缘。竖直驱动装置与夹盘板连接,竖直驱动装置驱动夹盘板下降或上升,以使夹盘板压在基板的背面来夹持基板或使夹盘板离开基板的背面。
综上所述,本发明的基板保持装置利用密封件包裹杯形夹盘,当使用该基板保持装置固持基板并将基板浸没在电解液中电镀时,密封件保护基板正面的边缘、基板的背面和杯形夹盘,避免基板正面的边缘、基板的背面和杯形夹盘接触电解液。密封件是柔软的,且制成杯形夹盘的材料的硬度比密封件的硬度高,当密封件包裹杯形夹盘时,杯形夹盘不会变形。因此,夹持基板后,密封件轻柔地密封基板表面而不会对基板表面造成损伤。密封件具有良好的密封效果。此外,密封件的厚度较厚,因此,密封件的使用寿命长。另外,在该基板保持装置使用一段时间后,只需要更换接触环和密封件,基板保持装置的其他部件都不需要更换,降低了生产成本。
附图说明
图1是本发明的基板保持装置的透视图。
图2是固持有基板的基板保持装置的俯视图。
图3是图2中沿着A-A线的截面图。
图4是图3中D部分圈出的局部放大图。
图5是图4中H部分圈出的局部放大图。
图6是显示了基板保持装置的杯形夹盘、接触环和密封件的爆炸图。
图7是基板保持装置的密封件的透视图。
图8是密封件的俯视图。
图9是图8中沿着B-B线的截面图。
图10是图9中F部分圈出的局部放大图。
图11是基板保持装置的接触环的截面图。
图12是图11中G部分圈出的局部放大图。
图13是本发明的另一实施例的压板和导电环的透视图。
图14是压板和导电环的俯视图。
图15是图14中沿着C-C线的截面图。
图16是图15中J部分圈出的局部放大图。
图17a-17f示意了各种形状的基板。
图18示意了疏水性的基本原理。
具体实施方式
本发明提出了一种在基板处理过程中固持基板的基板保持装置,例如,将基板浸没在电解液中电镀。当基板浸没在电解液中以在基板的正面电镀金属层时,基板正面的边缘和基板背面需要被保护,避免接触到电解液。因此,与现有技术的区别在于,当基板浸没在电解液中电镀时,本发明的基板保持装置利用密封件来阻止电解液接触基板正面的边缘和基板背面,且该密封件是可替换的。
参考图1至图6所示,为本发明的基板保持装置100。该基板保持装置100包括杯形夹盘101和夹盘板102。杯形夹盘101包括杯形的基部1011,基部1011围成穿透的接收空间1012。基部1011具有底壁、侧壁的外表面和侧壁的内表面。基部1011的侧壁的内表面是倾斜的,有利于装载基板113。基部1011的上端向外延伸出边沿1013。基部1011的侧壁的内表面倾斜的向上突出形成支撑部1014,该支撑部1014位于基部1011的下端。当基板113被放入接收空间1012内时,支撑部1014承载基板113。基部1011的下端开设有凹槽1015。杯形夹盘101由金属或碳化纤维材料制成,如不锈钢、钛、钽、铝合金等。
夹盘板102通过万向轴105与竖直驱动装置103相连。竖直驱动装置103驱动夹盘板102上升或下降。当基板113装载到接收空间1012并由支撑部1014支撑时,竖直驱动装置103驱动夹盘板102下降并压在基板113的背面,因此,基板113被杯形夹盘101和夹盘板102夹持。基板113的正面裸露以便进行工艺加工。工艺结束后,竖直驱动装置103驱动夹盘板102上升,夹盘板102离开基板113的背面,然后基板113从接收空间1012中取出。竖直驱动装置103可以是汽缸或马达。夹盘板102与基板113背面接触的一面设有多个狭槽1021,当夹盘板102离开基板113的背面时,空气很容易通过狭槽1021进入夹盘板102和基板113背面之间的空间,从而使基板113能轻易脱离夹盘板102。为了使基板113更容易的脱离夹盘板102,可以通过设置在万向轴105内的气体管道107向基板113的背面通氮气。夹盘板102由聚丙烯(PP)、聚偏二氟乙烯(PVDF)、聚醚醚酮(PEEK)或聚对苯二甲酸乙二醇酯(PET)等材料制成。
夹盘板102和杯形夹盘101之间设有O型密封圈108,当夹盘板102在竖直驱动装置103的驱动下下降以夹持基板113时,O型密封圈108起到缓冲作用。除此以外,当基板113浸入电解液中电镀时,O型密封圈108可以阻止电解液进入接收空间1012。为了满足不同工艺需求,该基板保持装置100还包括角度控制驱动装置104和旋转驱动装置106。当夹盘板102和杯形夹盘101固定基板113以进行工艺加工时,角度控制驱动装置104驱动夹盘板102和杯形夹盘101倾斜一角度。当夹盘板102和杯形夹盘101固定基板113以进行工艺加工时,旋转驱动装置106驱动夹盘板102和杯形夹盘101旋转。
参考图7至图10所示,示意了基板保持装置100的密封件111。密封件111包括底部1111、外壁1112和内壁1114。外壁1112的顶端设有突起1113。内壁1114弯曲形成唇形密封部1115。内壁1114与唇形密封部1115相连的末端水平延伸形成固定部1116。密封件111包裹杯形夹盘101。具体地,如图4和图5所示,密封件111的底部1111包裹杯形夹盘101基部1011的底壁,密封件111的外壁1112包裹杯形夹盘101基部1011的侧壁的外表面,唇形密封部1115包裹杯形夹盘101的支撑部1014。密封件111的固定部1116位于杯形夹盘101的凹槽1015内。为了将密封件111和杯形夹盘101固定在一起,杯形夹盘101的边沿1013的底部设有固定环109。固定环109挤压密封件111的突起1113,然后通过多个螺丝110将固定环109固定在杯形夹盘101边沿1013的底部。密封件111的厚度为0.1mm-2mm,较佳为0.3mm-1mm。在湿法工艺过程中,密封件111的唇形密封部1115密封基板113正面的边缘,使化学液体无法接触到基板113正面的边缘和基板113的背面。因此,湿法工艺完成后,基板113正面的边缘和基板113的背面是干的。除此以外,由于密封件111包裹杯形夹盘101,密封件111保护杯形夹盘101并防止杯形夹盘101接触到化学液体,避免杯形夹盘101被化学液体腐蚀。有了密封件111的保护,该基板保持装置100承载的基板113可以浸没到化学液体中加工,如电镀。为了避免化学液体腐蚀固定环109和螺丝110,化学液体的液面低于固定环109。
密封件111为一体成型,制成密封件111的材料可以是橡胶,如氟橡胶、硅橡胶、丁腈橡胶。制成密封件111的材料还可以是塑料,如聚四氟乙烯。用来制造密封件111的材料是柔软的并具有一定硬度,材料的硬度为硬度计检测出的20-70,较佳为40-60。制成密封件111的材料具有疏水性,并且材料表面粗糙度Ra<8μm。如图18所示,当液滴301和基板313之间的接触角Ф大于90°,则基板313具有疏水性,接触角Ф与材料表面粗糙度有关。当材料表面粗糙度增加,则接触角Ф变小。如果材料表面过于粗糙,大于8μm,那么密封效果会变差。因此,为了达到良好的密封效果,材料表面粗糙度最好小于5μm。
密封件111的内壁1114相对于水平面倾斜有一定角度α,α小于90°。当基板113需要被浸入电解液中电镀时,该基板保持装置100承载基板113,然后基板保持装置100从装载或卸载位置移动到工艺位置。基板113完全浸没在电解液中。在电镀过程中,基板保持装置100旋转,转速为3-200rpm。在基板113浸入电解液的过程中,空气可以顺着密封件111的内壁1114排出。另一方面,在电镀过程中,基板113正面会产生氢气,气泡也能顺着密封件111的内壁1114排出,否则,空气或气泡会引起沉积的金属存在空洞的问题。
当使用该基板保持装置100在基板113正面电镀金属层时,接触环112用来传导电流。如图11和图12所示,接触环112包括主体部1121、多个第一指形部1122和多个第二指形部1123。为了安装接触环112,杯形夹盘101基部1011的下端为可拆卸的。为了更清楚地说明,在本文中,杯形夹盘101基部1011的下端被命名为底座。底座的底部设有多个第一螺孔1016,接触环112的主体部1121设有多个第二螺孔1124。多个螺丝114穿过第一螺孔1016和第二螺孔1124将接触环112的主体部1121、杯形夹盘101的底座与杯形夹盘101的基部1011固定在一起。多个第一指形部1122接触基板113正面边缘处的种子层,且接触点位于距基板113的外边缘小于2mm处。在电镀过程中,基板113与电源电极相连,通过接触环112传导电流。杯形夹盘101由导电材料制成以传导电流。多个第二指形部1123紧压密封件111的固定部1116,将密封件111的固定部1116固定在杯形夹盘101的凹槽1015内,避免密封件111从杯形夹盘101上脱落。第一指形部1122和第二指形部1123交替设置。对于300mm的基板来说,第一指形部1122的数量应该不小于200个。如果第一指形部1122的数量太少,会导致基板113上的电流分布不均匀,进而导致基板113上的沉积速率不均匀。接触环112由导电材料制成,例如不锈钢、铜、钛、铱、钽、金、银、铂金和其他类似合金。接触环112也可以由具有铂金涂层或金涂层的不锈钢、钛、钽、铝制成。接触环112还可以由其他高导电性的材料制成。较佳的,接触环112由弹簧钢制成。
如图17a-17f所示,基板113的形状可以是圆形、椭圆形、三角形、正方形、长方形、八边形等。相应的,杯形夹盘101和夹盘板102设计成与基板113相匹配的形状。
为了装配密封件111和接触环112,首先,从杯形夹盘101的基部1011上拆下基座,然后密封件111的唇形密封部1115包裹杯形夹盘101的支撑部1014,且密封件111的固定部1116位于杯形夹盘101的凹槽1015内。使用多个螺丝将接触环112的主体部1121固定在杯形夹盘101的底座上,接触环112的第二指形部1123将密封件111的固定部1116紧压在杯形夹盘101的凹槽1015内。然后,多个螺丝114穿过杯形夹盘101上的第一螺孔1016和接触环112上的第二螺孔1124以将基座和杯形夹盘101的基部1011固定在一起。随后,密封件111的底部1111和外壁1112分别包裹杯形夹盘101基部1011的底壁和侧壁的外表面。最后,固定环109通过多个螺丝110固定在杯形夹盘101的边沿1013的底部,且固定环109紧压密封件111的突起1113。
使用该基板保持装置100进行电镀工艺包括以下步骤:
步骤1:将基板保持装置100移动到装载或卸载位置。
步骤2:竖直驱动装置103驱动夹盘板102上升。
步骤3:将基板113装载在密封件111的唇形密封部1115上,基板113正面朝下裸露出来。
步骤4:竖直驱动装置103驱动夹盘板102下降夹持基板113,密封件111的唇形密封部1115密封基板113正面的边缘,接触环112的多个第一指形部1112接触基板113正面边缘处的种子层。
步骤5:角度控制驱动装置104驱动夹盘板102和杯形夹盘101倾斜一定角度。
步骤6:旋转驱动装置106驱动夹盘板102和杯形夹盘101以预设的旋转速度转动,同时,基板保持装置100移动到工艺位置,在工艺位置,基板113浸没在电解液中。
步骤7:角度控制驱动装置104驱动夹盘板102和杯形夹盘101转动,使夹盘板102和杯形夹盘101保持垂直状态。
步骤8:打开电源,在基板113的正面电镀金属层。
步骤9:电镀工艺完成后,基板保持装置100移动到冲洗位置,然后高速旋转,将基板113表面的电解液冲洗掉。
步骤10:基板保持装置100移动到卸载位置,向基板113的背面通氮气,竖直驱动装置103驱动夹盘板102上升,然后将基板113从密封件111的唇形密封部1115上取走。
综上所述,本发明的基板保持装置100利用密封件111包裹杯形夹盘101,当使用该基板保持装置100固持基板113并将基板113浸没在电解液中电镀时,密封件111保护基板113正面的边缘、基板113的背面和杯形夹盘101内的接触环112,避免基板113正面的边缘、基板113的背面和杯形夹盘101内的接触环112接触电解液。密封件111是柔软的,且制成杯形夹盘101的材料的硬度比密封件111的硬度高,当密封件111包裹杯形夹盘101时,杯形夹盘101不会变形。因此,夹持基板113后,密封件111轻柔地密封基板表面而不会对基板表面造成损伤。密封件111具有良好的密封效果。此外,密封件111的厚度较厚,因此,密封件111的使用寿命长。另外,在该基板保持装置100使用一段时间后,只需要更换接触环112和密封件111,基板保持装置100的其他部件都不需要更换,降低了生产成本。
如图13至图16所示,在另一个具体实施方式中,提供了传导电流的导电环201和固定密封件111的压板202。导电环201和压板202组合后的功能与接触环112的功能相同,因此,导电环201和压板202的组合可以代替接触环112。当进行化学镀层时,可以省略导电环201。导电环201包括多个接触基板113正面边缘的指形部2011,压板202具有与导电环201的指形部2011相匹配的斜坡2021。为了安装密封件111,首先,从杯形夹盘101的基部1011上拆下底座,然后,密封件111的唇形密封部1115包裹杯形夹盘101的支撑部1014,密封件111的固定部1116位于杯形夹盘101的凹槽1015内。第一组螺丝将压板202和杯形夹盘101的底座固定在一起,压板202将密封件111的固定部1116固定在杯形夹盘101的凹槽1015内。然后,第二组螺丝将杯形夹盘101的底座、压板202和导电环201与杯形夹盘101的基部1011固定。随后,密封件111的底部1111和外壁1112分别包裹杯形夹盘101基部1011的底壁和侧壁的外表面。最后,固定环109通过多个螺丝110固定在杯形夹盘101边沿1013的底部,固定环109紧压密封件111的突起1113。
上面针对本发明的描述是为了说明和描述的目的。所描述的具体实施例并不是本发明的穷举或者是对于本发明的限制,可以显而易见地在本发明的教导下进行种种修改或变化,这些修改和变化对于本领域技术人员来说是显然的,因此被包括在符合权利要求书提到的本发明的范围内。
Claims (19)
1.一种基板保持装置,包括:
杯形夹盘,包括基部,基部具有底壁、侧壁的外表面和侧壁的内表面,基部的侧壁的内表面倾斜向上突出形成支撑基板正面边缘的支撑部;
密封件,包括底部、外壁和内壁,内壁设有唇形密封部,密封件的底部包裹杯形夹盘基部的底壁,密封件的外壁包裹杯形夹盘基部侧壁的外表面,密封件的唇形密封部包裹杯形夹盘的支撑部以密封基板正面的边缘;
夹盘板;以及
竖直驱动装置,与夹盘板连接,竖直驱动装置驱动夹盘板下降或上升,以使夹盘板压在基板的背面来夹持基板或使夹盘板离开基板的背面。
2.根据权利要求1所述的装置,其特征在于,杯形夹盘基部的上端向外延伸形成边沿,密封件外壁的顶端设有突起,一固定环固定在杯形夹盘边沿的底部,该固定环挤压密封件的突起以将密封件和杯形夹盘固定在一起。
3.根据权利要求1所述的装置,其特征在于,密封件的厚度为0.1mm-2mm。
4.根据权利要求3所述的装置,其特征在于,密封件的厚度为0.3mm-1mm。
5.根据权利要求1所述的装置,其特征在于,密封件由橡胶制成。
6.根据权利要求5所述的装置,其特征在于,制造密封件的材料为氟橡胶、硅橡胶、丁腈橡胶。
7.根据权利要求1所述的装置,其特征在于,制造密封件的材料的硬度为硬度计检测出的20-70。
8.根据权利要求1所述的装置,其特征在于,制造密封件的材料具有疏水性。
9.根据权利要求1所述的装置,其特征在于,密封件的内壁相对于水平面倾斜有一定角度α,角度α小于90°。
10.根据权利要求1所述的装置,其特征在于,杯形夹盘基部的下端设有凹槽,与唇形密封部相连的密封件的内壁的末端延伸出固定部,固定部位于凹槽内。
11.根据权利要求10所述的装置,其特征在于,进一步包括用于传导电流的接触环,接触环包括主体部、多个第一指形部和多个第二指形部,主体部固定在杯形夹盘基部的下端,多个第一指形部接触基板正面的边缘,多个第二指形部紧压密封件的固定部。
12.根据权利要求11所述的装置,其特征在于,杯形夹盘基部的下端是可拆卸的,基部下端的底部设有多个第一螺孔,接触环的主体部设有多个第二螺孔,多个螺丝穿过第一螺孔和第二螺孔以将接触环、基部的下端和基部固定在一起。
13.根据权利要求11所述的装置,其特征在于,第一指形部和第二指形部交替设置。
14.根据权利要求10所述的装置,其特征在于,进一步包括用来将密封件的固定部紧压在杯形夹盘凹槽内的压板。
15.根据权利要求1所述的装置,其特征在于,进一步包括用于传导电流的导电环,导电环包括多个与基板正面的边缘接触的指形部。
16.根据权利要求1所述的装置,其特征在于,与基板背面接触的夹盘板的表面设有多个狭槽。
17.根据权利要求1所述的装置,其特征在于,进一步包括设置在夹盘板和杯形夹盘之间的O型密封圈。
18.根据权利要求1所述的装置,其特征在于,进一步包括角度控制驱动装置,当夹盘板和杯形夹盘固定基板进行工艺加工时,角度控制驱动装置驱动夹盘板和杯形夹盘倾斜有一定角度。
19.根据权利要求1所述的装置,其特征在于,进一步包括旋转驱动装置,当夹盘板和杯形夹盘固定基板进行工艺加工时,旋转驱动装置驱动夹盘板和杯形夹盘旋转。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2015/096402 WO2017092029A1 (en) | 2015-12-04 | 2015-12-04 | Apparatus for holding substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108291325A true CN108291325A (zh) | 2018-07-17 |
CN108291325B CN108291325B (zh) | 2019-12-20 |
Family
ID=58796086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580085077.6A Active CN108291325B (zh) | 2015-12-04 | 2015-12-04 | 基板保持装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11008669B2 (zh) |
JP (1) | JP6633756B2 (zh) |
KR (1) | KR102381604B1 (zh) |
CN (1) | CN108291325B (zh) |
SG (1) | SG11201804654WA (zh) |
TW (1) | TWI691619B (zh) |
WO (1) | WO2017092029A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022127515A1 (zh) * | 2020-12-18 | 2022-06-23 | 盛美半导体设备(上海)股份有限公司 | 基板保持装置的杯形夹盘及基板保持装置 |
WO2024022201A1 (zh) * | 2022-07-28 | 2024-02-01 | 福州一策仪器有限公司 | 电镀装置、多通道电镀装置组和电镀反应系统 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11202001662SA (en) * | 2017-09-07 | 2020-03-30 | Acm Res Shanghai Inc | Plating chuck |
JP6963524B2 (ja) * | 2018-03-20 | 2021-11-10 | キオクシア株式会社 | 電解メッキ装置 |
TWI666344B (zh) * | 2018-08-22 | 2019-07-21 | 台灣創智成功科技有限公司 | 導電環、基於其的供電裝置及基於供電裝置的電鍍治具 |
TWI791785B (zh) * | 2019-03-06 | 2023-02-11 | 大陸商盛美半導體設備(上海)股份有限公司 | 電鍍夾盤 |
KR20210157413A (ko) * | 2019-05-17 | 2021-12-28 | 램 리써치 코포레이션 | 기판 부착 및 파손 완화 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030085119A1 (en) * | 2001-11-02 | 2003-05-08 | Innovative Technology Licensing, Llc | Semiconductor wafer plating cathode assembly |
JP2003313697A (ja) * | 2002-04-24 | 2003-11-06 | Tokyo Electron Ltd | 液処理装置及び液処理方法 |
CN1908247A (zh) * | 2005-06-20 | 2007-02-07 | 株式会社山本镀金试验器 | 用于电镀的夹具 |
US20090107836A1 (en) * | 2007-10-30 | 2009-04-30 | Novellus Systems, Inc. | Closed Contact Electroplating Cup Assembly |
CN101798698A (zh) * | 2008-12-10 | 2010-08-11 | 诺发系统有限公司 | 基底板、接触环、唇缘密封件与接触环以及电镀设备和电镀方法 |
CN102953104A (zh) * | 2011-08-15 | 2013-03-06 | 诺发系统有限公司 | 用于半导体电镀设备的唇形密封件和接触元件 |
CN104562123A (zh) * | 2014-12-31 | 2015-04-29 | 上海新阳半导体材料股份有限公司 | 晶圆电镀装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6423636B1 (en) | 1999-11-19 | 2002-07-23 | Applied Materials, Inc. | Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer |
US20030019741A1 (en) | 2001-07-24 | 2003-01-30 | Applied Materials, Inc. | Method and apparatus for sealing a substrate surface during an electrochemical deposition process |
TWI274393B (en) * | 2002-04-08 | 2007-02-21 | Acm Res Inc | Electropolishing and/or electroplating apparatus and methods |
JP3940648B2 (ja) | 2002-08-07 | 2007-07-04 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | ウェハーのめっき装置 |
US7025862B2 (en) | 2002-10-22 | 2006-04-11 | Applied Materials | Plating uniformity control by contact ring shaping |
JP2005248277A (ja) | 2004-03-05 | 2005-09-15 | Ebara Corp | メッキ装置の電極構造 |
US7938942B2 (en) | 2004-03-12 | 2011-05-10 | Applied Materials, Inc. | Single side workpiece processing |
US20090095634A1 (en) | 2007-10-15 | 2009-04-16 | Natsuki Makino | Plating method |
US7935231B2 (en) | 2007-10-31 | 2011-05-03 | Novellus Systems, Inc. | Rapidly cleanable electroplating cup assembly |
US9988734B2 (en) | 2011-08-15 | 2018-06-05 | Lam Research Corporation | Lipseals and contact elements for semiconductor electroplating apparatuses |
KR102112881B1 (ko) | 2012-03-28 | 2020-05-19 | 노벨러스 시스템즈, 인코포레이티드 | 전자도금 기판 홀더들을 세정하기 위한 방법들 및 장치들 |
US20130306465A1 (en) * | 2012-05-17 | 2013-11-21 | Applied Materials, Inc. | Seal rings in electrochemical processors |
US10053793B2 (en) * | 2015-07-09 | 2018-08-21 | Lam Research Corporation | Integrated elastomeric lipseal and cup bottom for reducing wafer sticking |
-
2015
- 2015-12-04 WO PCT/CN2015/096402 patent/WO2017092029A1/en active Application Filing
- 2015-12-04 KR KR1020187018362A patent/KR102381604B1/ko active IP Right Grant
- 2015-12-04 SG SG11201804654WA patent/SG11201804654WA/en unknown
- 2015-12-04 JP JP2018529035A patent/JP6633756B2/ja active Active
- 2015-12-04 US US15/781,410 patent/US11008669B2/en active Active
- 2015-12-04 CN CN201580085077.6A patent/CN108291325B/zh active Active
-
2016
- 2016-08-25 TW TW105127291A patent/TWI691619B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030085119A1 (en) * | 2001-11-02 | 2003-05-08 | Innovative Technology Licensing, Llc | Semiconductor wafer plating cathode assembly |
JP2003313697A (ja) * | 2002-04-24 | 2003-11-06 | Tokyo Electron Ltd | 液処理装置及び液処理方法 |
CN1908247A (zh) * | 2005-06-20 | 2007-02-07 | 株式会社山本镀金试验器 | 用于电镀的夹具 |
US20090107836A1 (en) * | 2007-10-30 | 2009-04-30 | Novellus Systems, Inc. | Closed Contact Electroplating Cup Assembly |
CN101798698A (zh) * | 2008-12-10 | 2010-08-11 | 诺发系统有限公司 | 基底板、接触环、唇缘密封件与接触环以及电镀设备和电镀方法 |
CN102953104A (zh) * | 2011-08-15 | 2013-03-06 | 诺发系统有限公司 | 用于半导体电镀设备的唇形密封件和接触元件 |
CN104562123A (zh) * | 2014-12-31 | 2015-04-29 | 上海新阳半导体材料股份有限公司 | 晶圆电镀装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022127515A1 (zh) * | 2020-12-18 | 2022-06-23 | 盛美半导体设备(上海)股份有限公司 | 基板保持装置的杯形夹盘及基板保持装置 |
WO2024022201A1 (zh) * | 2022-07-28 | 2024-02-01 | 福州一策仪器有限公司 | 电镀装置、多通道电镀装置组和电镀反应系统 |
Also Published As
Publication number | Publication date |
---|---|
JP6633756B2 (ja) | 2020-01-22 |
JP2018537590A (ja) | 2018-12-20 |
TWI691619B (zh) | 2020-04-21 |
KR102381604B1 (ko) | 2022-04-01 |
TW201730382A (zh) | 2017-09-01 |
KR20180087379A (ko) | 2018-08-01 |
CN108291325B (zh) | 2019-12-20 |
US11008669B2 (en) | 2021-05-18 |
WO2017092029A1 (en) | 2017-06-08 |
SG11201804654WA (en) | 2018-06-28 |
US20180320285A1 (en) | 2018-11-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108291325A (zh) | 基板保持装置 | |
US8172989B2 (en) | Prevention of substrate edge plating in a fountain plating process | |
US20010000396A1 (en) | Electric contact element for electrochemical deposition system | |
KR101587819B1 (ko) | 전기화학적 프로세서용 컨택 링 | |
US6444101B1 (en) | Conductive biasing member for metal layering | |
CN111032925B (zh) | 电镀夹盘 | |
CN104047042A (zh) | 电镀以及实施电镀的装置 | |
CN104878435A (zh) | 基板保持架、电镀装置以及电镀方法 | |
JP6218682B2 (ja) | 基板ホルダを備えためっき装置、およびめっき方法 | |
TW557543B (en) | Method and apparatus for sealing a substrate surface during an electrochemical deposition process | |
US10954603B2 (en) | Substrate holder, plating apparatus, plating method, and electric contact | |
US20050274604A1 (en) | Plating apparatus | |
JP6382096B2 (ja) | めっき方法、めっき装置、および基板ホルダ | |
TWI791785B (zh) | 電鍍夾盤 | |
US10612151B2 (en) | Flow assisted dynamic seal for high-convection, continuous-rotation plating | |
JP6216652B2 (ja) | 基板ホルダを備えためっき装置 | |
JP2008202103A (ja) | 基板保持装置、メッキ装置、基板保持方法およびメッキ方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Patentee after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Cailun Road No. fourth 1690 Patentee before: ACM (SHANGHAI) Inc. |