JP2018537590A - 基板把持装置 - Google Patents
基板把持装置 Download PDFInfo
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- JP2018537590A JP2018537590A JP2018529035A JP2018529035A JP2018537590A JP 2018537590 A JP2018537590 A JP 2018537590A JP 2018529035 A JP2018529035 A JP 2018529035A JP 2018529035 A JP2018529035 A JP 2018529035A JP 2018537590 A JP2018537590 A JP 2018537590A
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- 239000000758 substrate Substances 0.000 title claims abstract description 149
- 238000007789 sealing Methods 0.000 claims abstract description 94
- 239000000463 material Substances 0.000 claims description 20
- 238000003825 pressing Methods 0.000 claims description 9
- 229920001971 elastomer Polymers 0.000 claims description 4
- 230000002209 hydrophobic effect Effects 0.000 claims description 4
- 239000005060 rubber Substances 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 229920000459 Nitrile rubber Polymers 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 238000007747 plating Methods 0.000 description 17
- 239000008151 electrolyte solution Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000639 Spring steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/08—Rinsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)
- Paints Or Removers (AREA)
Abstract
Description
Claims (19)
- ベース部を有するカップ型チャックであって、前記ベース部が、下側面と、外側面と、内側面とを有し、前記内側面が前記ベース部の下端部において斜め上方に突出して基板の前面縁部を支持する支持部が形成されたカップ型チャックと、
底壁と、外壁と、前記リップシール部を形成する内壁とを有する封止シェルであって、前記封止シェルの前記底壁が前記カップ型チャックの前記ベース部の前記下側面を覆い、前記封止シェルの前記外壁が前記カップ型チャックの前記ベース部の前記外側面を覆い、前記封止シェルの前記リップシール部が前記カップ型チャックの前記支持部を覆って前記基板の前面縁部を封止する封止シェルと、
チャックプレートと、
前記チャックプレートに接続された垂直駆動装置であって、前記チャックプレートを昇降させることにより、前記チャックプレートを前記基板の裏面に押し付けて前記基板を前記封止シェルの前記リップシール部に固定させる、又は、前記基板の裏面から離脱させる垂直駆動装置とを備えることを特徴とする基板把持装置。 - 前記カップ型チャックの前記ベース部の上端が外方向へ延在して鍔部を形成しており、前記封止シェルの前記外壁の先端が突出部を有しており、固定リングが複数のネジによって前記鍔部の下面に固定されており、前記固定リングが、前記突出部を圧迫して前記封止シェルと前記カップ型チャックとを固定していることを特徴とする請求項1に記載の基板把持装置。
- 前記封止シェルの厚みが0.1mm〜2mmであることを特徴とする請求項1に記載の基板把持装置。
- 前記封止シェルの厚みが0.3mm〜1mmであることを特徴とする請求項3に記載の基板把持装置。
- 前記封止シェルの材料がゴムであることを特徴とする請求項1に記載の基板把持装置。
- 前記封止シェルの材料がフッ素ゴム、シリコンゴム、又は、ニトリルブタジエンゴムであることを特徴とする請求項5に記載の基板把持装置。
- デュロメータによる試験での前記封止シェルの材料の硬度が20〜70の範囲であることを特徴とする請求項1に記載の基板把持装置。
- 前記封止シェルの材料が疎水性であることを特徴とする請求項1に記載の基板把持装置。
- 前記封止シェルの前記内壁は水平面に対して角度αに傾斜しており、前記角度αが90度より小さいことを特徴とする請求項1に記載の基板把持装置。
- 前記カップ型チャックのベース部の下端部に溝が形成されており、前記リップシール部に接続する前記封止シェルの前記内壁の先端が固定部を形成するように延在し、前記固定部が前記溝内に配置されていることを特徴とする請求項1に記載の基板把持装置。
- 電流導通用の接触リングをさらに備え、前記接触リングは、本体部と、複数の第1指部と、複数の第2指部とを有し、前記本体部は前記カップ型チャックの前記ベース部の前記下端部に固定されており、前記複数の第1指部は前記基板の前面縁部に接触しており、前記複数の第2指部は前記封止シェルの前記固定部に押し付けられていることを特徴とする請求項10に記載の基板把持装置。
- 前記カップ型チャックの前記ベース部の前記下端部は、前記ベース部の前記下端部に前記接触リングを取り付けるために取り外し可能であり、前記ベース部の前記下端部の下側面は複数の第1ネジ孔を画定しており、前記接触リングの前記本体部は複数の第2ネジ孔を画定しており、複数のネジが前記第1ネジ孔及び前記第2ネジ孔に通されることにより、前記接触リング、前記ベース部の前記下端部、及び、前記ベース部が互いに固定されていることを特徴とする請求項11に記載の基板把持装置。
- 前記第1指部及び前記第2指部は交互に配置されていることを特徴とする請求項11に記載の基板把持装置。
- 前記封止シェルの前記固定部を前記カップ型チャックの前記溝に押し付ける押圧プレートをさらに備えることを特徴とする請求項10に記載の基板把持装置。
- 電流導通用の導電リングをさらに備え、前記導電リングは、前記基板の前面縁部と接触する複数の指部を有することを特徴とする請求項1に記載の基板把持装置。
- 前記基板の裏面と接触する前記チャックプレートの表面は、複数のスロットを画定していることを特徴とする請求項1に記載の基板把持装置。
- 前記チャックプレートと前記カップ型チャックとの間に配置されたOリングをさらに備えていることを特徴とする請求項1に記載の基板把持装置。
- 角度制御駆動装置をさらに備え、前記角度制御駆動装置は、前記基板が処理用に前記チャックプレートと前記カップ型チャックとに固定されている際に、前記チャックプレートと前記カップ型チャックとを任意の角度に傾斜させることを特徴とする請求項1に記載の基板把持装置。
- 回転駆動装置をさらに備え、前記回転駆動装置は、前記基板が処理用に前記チャックプレートと前記カップ型チャックとに固定されている際に、前記チャックプレートと前記カップ型チャックとを回転させることを特徴とする請求項1に記載の基板把持装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/CN2015/096402 WO2017092029A1 (en) | 2015-12-04 | 2015-12-04 | Apparatus for holding substrate |
Publications (2)
Publication Number | Publication Date |
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JP2018537590A true JP2018537590A (ja) | 2018-12-20 |
JP6633756B2 JP6633756B2 (ja) | 2020-01-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2018529035A Active JP6633756B2 (ja) | 2015-12-04 | 2015-12-04 | 基板把持装置 |
Country Status (7)
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US (1) | US11008669B2 (ja) |
JP (1) | JP6633756B2 (ja) |
KR (1) | KR102381604B1 (ja) |
CN (1) | CN108291325B (ja) |
SG (1) | SG11201804654WA (ja) |
TW (1) | TWI691619B (ja) |
WO (1) | WO2017092029A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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SG11202001662SA (en) * | 2017-09-07 | 2020-03-30 | Acm Res Shanghai Inc | Plating chuck |
JP6963524B2 (ja) * | 2018-03-20 | 2021-11-10 | キオクシア株式会社 | 電解メッキ装置 |
TWI666344B (zh) * | 2018-08-22 | 2019-07-21 | 台灣創智成功科技有限公司 | 導電環、基於其的供電裝置及基於供電裝置的電鍍治具 |
TWI791785B (zh) * | 2019-03-06 | 2023-02-11 | 大陸商盛美半導體設備(上海)股份有限公司 | 電鍍夾盤 |
KR20210157413A (ko) * | 2019-05-17 | 2021-12-28 | 램 리써치 코포레이션 | 기판 부착 및 파손 완화 |
CN114645311A (zh) * | 2020-12-18 | 2022-06-21 | 盛美半导体设备(上海)股份有限公司 | 基板保持装置的杯形夹盘及基板保持装置 |
CN115142104B (zh) * | 2022-07-28 | 2024-04-26 | 福州一策仪器有限公司 | 电镀装置、多通道电镀装置组和电镀反应系统 |
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2015
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WO2017092029A1 (en) | 2017-06-08 |
TW201730382A (zh) | 2017-09-01 |
TWI691619B (zh) | 2020-04-21 |
US20180320285A1 (en) | 2018-11-08 |
CN108291325B (zh) | 2019-12-20 |
US11008669B2 (en) | 2021-05-18 |
CN108291325A (zh) | 2018-07-17 |
SG11201804654WA (en) | 2018-06-28 |
KR102381604B1 (ko) | 2022-04-01 |
KR20180087379A (ko) | 2018-08-01 |
JP6633756B2 (ja) | 2020-01-22 |
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