CN108288439B - 显示装置 - Google Patents

显示装置 Download PDF

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CN108288439B
CN108288439B CN201710018650.2A CN201710018650A CN108288439B CN 108288439 B CN108288439 B CN 108288439B CN 201710018650 A CN201710018650 A CN 201710018650A CN 108288439 B CN108288439 B CN 108288439B
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sub
pixel unit
transistor
electrically connected
display device
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CN108288439A (zh
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陈扬证
吴昱娴
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Innolux Corp
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Priority to US15/841,292 priority patent/US10283580B2/en
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Priority to US16/367,256 priority patent/US10700153B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
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    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0243—Details of the generation of driving signals
    • G09G2310/0251—Precharge or discharge of pixel before applying new pixel voltage
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0262—The addressing of the pixel, in a display other than an active matrix LCD, involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependent on signals of two data electrodes
    • G—PHYSICS
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    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/06—Details of flat display driving waveforms
    • G09G2310/061—Details of flat display driving waveforms for resetting or blanking
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract

本发明提供一种显示装置，包括基板、驱动信号线、第一子像素单元及第二子像素单元。驱动信号线、第一子像素单元及第二子像素单元配置于基板上。第一子像素单元包括第一发光单元、第一驱动晶体管及第一重置晶体管，其中第一驱动晶体管与驱动信号线及第一发光单元电性连接，第一重置晶体管具有第一通道区且与第一发光单元及第一驱动晶体管电性连接。第二子像素单元包括第二发光单元、第二驱动晶体管及第二重置晶体管，其中第二驱动晶体管与驱动信号线及第二发光单元电性连接，第二重置晶体管具有第二通道区且与第二发光单元及第二驱动晶体管电性连接，以及第一通道区的宽度与第二通道区的宽度不同。本发明的显示装置具有高发光效率。

Description

显示装置
技术领域
本发明涉及一种装置，且特别涉及一种显示装置。
背景技术
近年来，随着电子产品发展技术的进步及其日益广泛的应用，具有小体积及低电力消耗特性的显示器的需求与日俱增。在显示器当中，由于发光二极管显示器具有自发光、高亮度、广视角、高反应速度等特性，使得发光二极管显示器成为下一世代显示器的选择之一。开发出具有高发光效率的发光二极管显示器是目前显示技术的主要趋势之一。
发明内容
本发明的显示装置包括基板、驱动信号线、第一子像素单元及第二子像素单元。驱动信号线、第一子像素单元及第二子像素单元配置于基板上。第一子像素单元包括第一发光单元、第一驱动晶体管及第一重置晶体管，其中第一驱动晶体管与驱动信号线及第一发光单元电性连接，第一重置晶体管具有第一通道区且与第一发光单元及第一驱动晶体管电性连接。第二子像素单元包括第二发光单元、第二驱动晶体管及第二重置晶体管，其中第二驱动晶体管与驱动信号线及第二发光单元电性连接，第二重置晶体管具有第二通道区且与第二发光单元及第二驱动晶体管电性连接，以及第一通道区的宽度与第二通道区的宽度不同
为让本发明的上述特征和优点能更明显易懂，下文举例实施方式，并配合附图作详细说明如下。
附图说明
图1是本发明的一实施方式的显示装置的局部电路图。
图2是本发明的一实施方式的显示装置的结构的局部上视示意图。
图3是本发明的一实施方式的触控显示装置的示意图。
图4是本发明的另一实施方式的触控显示装置的示意图。
附图标记说明：
10：显示装置
100：基板
BC、GC、RC、WC：储存电容器
BC1、GC1、RC1、WC1：下电极
BC2、GC2、RC2、WC2：上电极
BCH、GCH、RCH、WCH：通道区
BD1、BD2、BD3、GD1、GD2、GD3、RD1、RD2、RD3、WD1、WD2、WD3：漏极
BG1、BG2、BG3、GG1、GG2、GG3、RG1、RG2、RG3、WG1、WG2、WG3：栅极
BL、GL、RL、WL：半导体层
BS1、BS2、BS3、GS1、GS2、GS3、RS1、RS2、RS3、WS1、WS2、WS3：源极
BT1、GT1、RT1、WT1：驱动晶体管
BT2、GT2、RT2、WT2：开关晶体管
BT3、GT3、RT3、WT3：重置晶体管
BW、GW、RW、WW：宽度
DL1～DL4：数据线
H：接触窗
SL：扫描线
Vdd：驱动信号线
具体实施方式
在本发明中，只要有可能，相同元件符号在附图和描述中用来表示相同或相似部分。
在本发明中，当某层配置在其它层“上”时，有可能是指某层“直接”在其它层上，或指某层“间接”在其它层上，即某层和其它层之间还夹设有至少一层。
在本发明中，任两个用来比较的数值或方向，可存在着一定的误差。若第一值等于第二值，其隐含着第一值与第二值之间可存在着约10％的误差；若第一方向垂直于第二方向，则第一方向与第二方向之间的角度可介于80度至100度之间；若第一方向平行于第二方向，则第一方向与第二方向之间的角度可介于0度至10度之间。
在本发明中，为了便于理解，晶体管的源极与漏极的位置于图中的标示为示范例，并不用以限定本发明。这是因为晶体管的源极与漏极会随着电流的流向改变，或是晶体管为NMOS晶体管或PMOS晶体管而有所不同。
以下，以实施方式详细描述本发明的显示装置，以作为本发明确实能够据以实施的范例，并不用以限定本发明。
图1是本发明的一实施方式的显示装置的局部电路图。图2是本发明的一实施方式的显示装置的结构的局部上视示意图。特别一提的是，图1及图2所揭示的内容分别仅为本发明的显示装置的电路布局的其中一种及结构的其中一种，并不用以限定本发明。实际而言，显示装置的布局方式可依据内部元件的设置或与信号线之间的连接关系而更改。
请同时参照图1及图2，在本实施方式中，显示装置10包括基板100、驱动信号线Vdd、以及多个像素单元U。一个像素单元U包括子像素单元R、子像素单元G、子像素单元B、及子像素单元W。另外，在本实施方式中，显示装置10还包括扫描线SL、数据线DL1～DL4。为了方便说明起见，图1中仅示出一个像素单元U，然而任何所属领域技术人员应可理解，显示装置10中的多个像素单元U一般呈阵列排列。另一方面，同样地，为了方便说明起见，图2中仅揭示出一个像素单元U中的部分构件。另一方面，在本实施方式中，虽每一像素单元U包括子像素单元B、子像素单元G、子画素单元R及子像素单元W，但本发明并不限于此。在本发明的另一实施方式中，一个像素单元U也可包括子像素单元R、子像素单元G及子像素单元B，而未包括子像素单元W。
基板100的材质可为(但不限于)：玻璃、石英、有机聚合物、不透光/反射材料(例如：导电材料、金属、晶圆、陶瓷、或其它可适用的材料)、其它可适用的材料或是上述至少二种材料的堆叠或混合。若基板100的材质为有机聚合物，其可具体实施为聚酰亚胺(polyimide，PI)、聚对苯二甲酸乙二酯(polyethylene terephthalate，PET)、或聚碳酸酯(polycarbonate，PC)，但并不以此为限。
数据线DL1～DL4与扫描线SL配置于基板100上且延伸方向不相同，较佳的是数据线DL1～DL4的延伸方向与扫描线SL的延伸方向垂直。另外，数据线DL1～DL4与扫描线SL属于不同的膜层。基于导电性的考量，数据线DL1～DL4以及扫描线SL一般是使用金属材料。然而，本发明并不限于此，在其他实施方式中，数据线DL1～DL4以及扫描线SL也可以使用例如(但不限于)：合金、金属材料的氮化物、金属材料的氧化物、金属材料的氮氧化物等的其他导电材料，或是金属材料与前述其它导电材料的堆叠层或混合。
驱动信号线Vdd配置于基板100上。在本实施方式中，驱动信号线Vdd电性连接至高准位电压源，以向像素单元U提供高准位电压。驱动信号线Vdd的延伸方向与数据线DL1～DL4的延伸方向平行。然而，本发明不限于此。
子像素单元W、子像素单元R、子像素单元G以及子像素单元B配置于基板100上。详细而言，在本实施方式中，子像素单元W包括发光单元WO、驱动晶体管WT1及重置晶体管WT3；子像素单元R包括发光单元RO、驱动晶体管RT1及重置晶体管RT3；子像素单元G包括发光单元GO、驱动晶体管GT1及重置晶体管GT3；以及子像素单元B包括发光单元BO、驱动晶体管BT1及重置晶体管BT3。另外，在本实施方式中，子像素单元W还包括开关晶体管WT2及储存电容器WC；子像素单元R还包括开关晶体管RT2及储存电容器RC；子像素单元G还包括开关晶体管GT2及储存电容器GC；以及子像素单元B还包括开关晶体管BT2及储存电容器BC。也就是说，在本实施方式中，子像素单元W、子像素单元R、子像素单元G以及子像素单元B皆是以3T1C的架构为例来说明，但并非用以限定本发明。在其他实施方式中，子像素单元W、子像素单元R、子像素单元G以及子像素单元B也可以是4T2C的架构、6T1C的架构、7T2C的架构或是任何可能的架构。本发明的子画素单元的晶体管可采用NMOS晶体管、PMOS晶体管或CMOS晶体管。
另外，在本实施方式中，子像素单元W为白色子像素单元、子像素单元R为红色子像素单元、子像素单元G为绿色子像素单元以及子像素单元B为蓝色子像素单元。也就是说，在本实施方式中，子像素单元W会发出白色光、子像素单元R会发出红色光、子像素单元G会发出绿色光以及子像素单元B会发出蓝色光。再者，在本实施方式中，子像素单元W、R、G、B的发光单元WO、RO、GO、BO皆分别发出相同颜色的光，例如：白光。在发光单元WO、RO、GO、BO中，除了发光单元WO之外，发光单元RO、GO、BO还搭配红色色阻、绿色色阻以及蓝色色阻以显示出各种不同的色光。然而，本发明并不以此为限。在本发明的另一实施方式中，发光单元WO、RO、GO、BO各自发出白色光、红色光、绿色光与蓝色光，而省略搭配各色色阻。在本发明的又一实施方式中，发光单元WO、RO、GO、BO可各自发出白色光、红色光、绿色光与蓝色光，再搭配有各色色阻。
另一方面，在本实施方式中，发光单元WO、发光单元RO、发光单元GO及发光单元BO皆为有机发光二极管。也就是说，在本实施方式中，显示装置10为有机发光二极管显示装置。然而在其他实施方式中，发光单元WO、发光单元RO、发光单元GO、发光单元BO为微型发光二极管(micro-LED)，例如覆晶式微型发光二极管或垂直式微型发光二极管。这样，显示装置10为微型发光二极管显示装置。
具体来说，在本实施方式中，开关晶体管WT2的栅极WG2与扫描线SL电性连接；开关晶体管WT2的源极WS2与数据线DL1电性连接；开关晶体管WT2的漏极WD2与驱动晶体管WT1的栅极WG1电性连接；驱动晶体管WT1的漏极WD1与驱动信号线Vdd电性连接，以接收高准位电压；储存电容器WC的上电极WC2与驱动晶体管WT1的栅极WG1电性连接；储存电容器WC的下电极WC1与驱动晶体管WT1的源极WS1电性连接；重置晶体管WT3的漏极WD3与驱动晶体管WT1的源极WS1电性连接；重置晶体管WT3的栅极WG3与扫描线SL电性连接；重置晶体管WT3的源极WS3与参考电压源Vref电性连接，以接收参考电压；发光单元WO的阳极WOa与驱动晶体管WT1的源极WS1电性连接；以及发光单元WO的阴极WOc与低准位电压源Vss电性连接。也就是说，在本实施方式中，驱动晶体管WT1与驱动信号线Vdd及发光单元WO电性连接；重置晶体管WT3与发光单元WO及驱动晶体管WT1电性连接；储存电容器WC与发光单元WO、驱动晶体管WT1及重置晶体管WT3电性连接；以及开关晶体管WT2与驱动晶体管WT1及储存电容器WC电性连接。
同样地，在本实施方式中，开关晶体管RT2的栅极RG2与扫描线SL电性连接；开关晶体管RT2的源极RS2与数据线DL2电性连接；开关晶体管RT2的漏极RD2与驱动晶体管RT1的栅极RG1电性连接；驱动晶体管RT1的漏极RD1与驱动信号线Vdd电性连接，以接收高准位电压；储存电容器RC的上电极RC2与驱动晶体管RT1的栅极RG1电性连接；储存电容器RC的下电极RC1与驱动晶体管RT1的源极RS1电性连接；重置晶体管RT3的漏极RD3与驱动晶体管RT1的源极RS1电性连接；重置晶体管RT3的栅极RG3与扫描线SL电性连接；重置晶体管RT3的源极RS3与参考电压源Vref电性连接，以接收参考电压；发光单元RO的阳极ROa与驱动晶体管RT1的源极RS1电性连接；以及发光单元RO的阴极ROc与低准位电压源Vss电性连接。也就是说，在本实施方式中，驱动晶体管RT1与驱动信号线Vdd及发光单元RO电性连接；重置晶体管RT3与发光单元RO及驱动晶体管RT1电性连接；储存电容器RC与发光单元RO、驱动晶体管RT1及重置晶体管RT3电性连接；以及开关晶体管RT2与驱动晶体管RT1及储存电容器RC电性连接。
同样地，在本实施方式中，开关晶体管GT2的栅极GG2与扫描线SL电性连接；开关晶体管GT2的源极GS2与数据线DL3电性连接；开关晶体管GT2的漏极GD2与驱动晶体管GT1的栅极GG1电性连接；驱动晶体管GT1的漏极GD1与驱动信号线Vdd电性连接，以接收高准位电压；储存电容器GC的上电极GC2与驱动晶体管GT1的栅极GG1电性连接；储存电容器GC的下电极GC1与驱动晶体管GT1的源极GS1电性连接；重置晶体管GT3的漏极GD3与驱动晶体管GT1的源极GS1电性连接；重置晶体管GT3的栅极GG3与扫描线SL电性连接；重置晶体管GT3的源极GS3与参考电压源Vref电性连接，以接收参考电压；发光单元GO的阳极GOa与驱动晶体管GT1的源极GS1电性连接；以及发光单元GO的阴极GOc与低准位电压源Vss电性连接。也就是说，在本实施方式中，驱动晶体管GT1与驱动信号线Vdd及发光单元GO电性连接；重置晶体管GT3与发光单元GO及驱动晶体管GT1电性连接；储存电容器GC与发光单元GO、驱动晶体管GT1及重置晶体管GT3电性连接；以及开关晶体管GT2与驱动晶体管GT1及储存电容器GC电性连接。
同样地，在本实施方式中，开关晶体管BT2的栅极BG2与扫描线SL电性连接；开关晶体管BT2的源极BS2与数据线DL4电性连接；开关晶体管BT2的漏极BD2与驱动晶体管BT1的栅极BG1电性连接；驱动晶体管BT1的漏极BD1与驱动信号线Vdd电性连接，以接收高准位电压；储存电容器BC的上电极BC2与驱动晶体管BT1的栅极BG1电性连接；储存电容器BC的下电极BC1与驱动晶体管BT1的源极BS1电性连接；重置晶体管BT3的漏极BD3与驱动晶体管BT1的源极BS1电性连接；重置晶体管BT3的栅极BG3与扫描线SL电性连接；重置晶体管BT3的源极BS3与参考电压源Vref电性连接，以接收参考电压；发光单元BO的阳极BOa与驱动晶体管BT1的源极BS1电性连接；以及发光单元BO的阴极BOc与低准位电压源Vss电性连接。也就是说，在本实施方式中，驱动晶体管BT1与驱动信号线Vdd及发光单元BO电性连接；重置晶体管BT3与发光单元BO及驱动晶体管BT1电性连接；储存电容器BC与发光单元BO、驱动晶体管BT1及重置晶体管BT3电性连接；以及开关晶体管BT2与驱动晶体管BT1及储存电容器BC电性连接。
在本实施方式中，低准位电压源Vss为接地，而驱动信号线Vdd提供一大于零的电压，故驱动信号线Vdd与低准位电压源Vss具有一电压差，令电流由发光单元的阳极流向阴极。然而，本发明并不限于此。在其他实施方式中，低准位电压源Vss提供一大于零的电压，但其位准低于驱动信号线Vdd提供的电压，同样可令电流由发光单元的阳极流向阴极。
另外，在本实施方式中，储存电容器RC的面积大于储存电容器GC的面积，储存电容器RC的面积大于储存电容器WC的面积，储存电容器BC的面积大于储存电容器GC的面积，储存电容器BC的面积大于储存电容器WC的面积，储存电容器GC的面积大于储存电容器WC的面积，以及储存电容器RC的面积实质上等于储存电容器BC的面积。也就是说，在本实施方式中，储存电容器WC、储存电容器RC、储存电容器GC以及储存电容器BC中的至少三个的面积不相同。值得一提的是，在本文中，储存电容器的面积定义为：储存电容器的上电极与下电极彼此相重叠的面积。以储存电容器RC为例，储存电容器RC的面积即为上电极RC2与下电极RC1彼此相重叠的面积。从另一观点而言，在本实施方式中，由于上电极(上电极WC2、RC2、GC2、BC2)的面积小于下电极(下电极WC1、RC1、GC1、BC1)，因此储存电容器的面积可视为上电极(上电极WC2、RC2、GC2、BC2)的面积。
值得说明的是，在本实施方式中，通过储存电容器WC、储存电容器RC、储存电容器GC以及储存电容器BC中的至少三个的面积不相同，可使得显示装置10中的子像素单元W、子像素单元R、子像素单元G以及子像素单元B之间具有相近的发光亮度，其原因如下。
一般而言，与红色子像素单元与蓝色子像素单元的发光效率相比，绿色子像素单元与白色子像素单元的发光效率较为优异。而白色子像素单元的发光效率又优于绿色子像素的发光效率。然须知悉的是，前述关于发光效率的比较仅为举例，并不用以限定本发明。基于此，在本实施方式中，通过储存电容器RC的面积大于储存电容器GC的面积，储存电容器RC的面积大于储存电容器WC的面积，储存电容器BC的面积大于储存电容器GC的面积，储存电容器BC的面积大于储存电容器WC的面积，或储存电容器GC的面积大于储存电容器WC的面积，以使得与储存电容器GC及储存电容器WC相比，储存电容器RC与储存电容器BC可储存较大量的电荷；或与储存电容器WC相比，储存电容器GC可储存较大量的电荷，由此可达成子像素单元W、子像素单元R、子像素单元G以及子像素单元B之间具有相近的发光亮度。
另外，在本实施方式中，半导体层WL中对应重置晶体管WT3的源极WS3及漏极WD3的部分分别为重置晶体管WT3的源极掺杂区及漏极掺杂区，其中重置晶体管WT3的源极WS3及漏极WD3分别与源极掺杂区及漏极掺杂区电性连接，而半导体层WL中位于源极掺杂区及漏极掺杂区之间的部分即为重置晶体管WT3的通道区WCH。也就是说，在本实施方式中，通道区WCH位于半导体层WL中。
同样地，在本实施方式中，半导体层RL中对应重置晶体管RT3的源极RS3及漏极RD3的部分分别为重置晶体管RT3的源极掺杂区及漏极掺杂区，其中重置晶体管RT3的源极RS3及漏极RD3分别与源极掺杂区及漏极掺杂区电性连接，而半导体层RL中位于源极掺杂区及漏极掺杂区之间的部分即为重置晶体管RT3的通道区RCH。也就是说，在本实施方式中，通道区RCH位于半导体层RL中。
同样地，在本实施方式中，半导体层GL中对应重置晶体管GT3的源极GS3及漏极GD3的部分分别为重置晶体管GT3的源极掺杂区及漏极掺杂区，其中重置晶体管GT3的源极GS3及漏极GD3分别与源极掺杂区及漏极掺杂区电性连接，而半导体层GL中位于源极掺杂区及漏极掺杂区之间的部分即为重置晶体管GT3的通道区GCH。也就是说，在本实施方式中，通道区GCH位于半导体层GL中。
同样地，在本实施方式中，半导体层BL中对应重置晶体管BT3的源极BS3及漏极BD3的部分分别为重置晶体管BT3的源极掺杂区及漏极掺杂区，其中重置晶体管BT3的源极BS3及漏极BD3分别与源极掺杂区及漏极掺杂区电性连接，而半导体层BL中位于源极掺杂区及漏极掺杂区之间的部分即为重置晶体管BT3的通道区BCH。也就是说，在本实施方式中，通道区BCH位于半导体层BL中。
另外，在本实施方式中，半导体层WL、半导体层RL、半导体层GL及半导体层BL的材质可包括非晶硅、低温多晶硅、金属氧化物半导体材料或上述的组合，但并不以此为限。金属氧化物半导体材料例如包括(但不限于)：铟镓锌氧化物(Indium-Gallium-Zinc Oxide，IGZO)、氧化锌、氧化锡(SnO)、氧化铟锌(Indium-Zinc Oxide，IZO)、氧化镓锌(Gallium-Zinc Oxide，GZO)、氧化锌锡(Zinc-Tin Oxide，ZTO)或氧化铟锡(Indium-Tin Oxide，ITO)。在其他实施方式中，部分晶体管的半导体层可采用多晶硅，而另一部分晶体管的半导体层可采用金属氧化物半导体材料。然而半导体层的混合态样并不以上述为限。
更具体而言，在本实施方式中，通道区RCH的宽度RW大于通道区GCH的宽度GW，通道区RCH的宽度RW大于通道区WCH的宽度WW，通道区BCH的宽度BW大于通道区GCH的宽度GW，通道区BCH的宽度BW大于通道区WCH的宽度WW，通道区GCH的宽度GW大于通道区WCH的宽度WW，或通道区RCH的宽度RW实质上等于通道区BCH的宽度BW。然而，本发明并不以此为限。在另一实施方式中，通道区RCH的宽度RW可大于通道区BCH的宽度BW。在又一实施方式中，通道区RCH的宽度RW可小于通道区BCH的宽度BW。也就是说，在本实施方式中，重置晶体管WT3、重置晶体管RT3、重置晶体管GT3以及重置晶体管BT3中的至少三个的通道区的宽度不相同。举例而言，在一实施例中，在显示装置10的尺寸为65吋的情况下，通道区WCH的宽度WW为8μm，通道区RCH的宽度RW为13μm，通道区GCH的宽度GW为9μm，以及通道区BCH的宽度BW为13μm。然本发明并不以前述例子为限。
值得说明的是，在本实施方式中，通过重置晶体管WT3、重置晶体管RT3、重置晶体管GT3以及重置晶体管BT3中的至少三个的通道区的宽度不相同，使得在重置阶段期间，像素单元U中的子像素单元W、子像素单元R、子像素单元G以及子像素单元B之间可在重置阶段期间内完成重置操作，其原因如下。
一般而言，发光二极管显示器的运作过程包括四个阶段：重置阶段、补偿阶段、资料写入阶段以及发光阶段，其中在重置阶段期间，重置晶体管会被开启以重设储存电容器的电压至参考电压。当储存电容器的面积不同，而重置晶体管的通道区的宽度相同时，使参考电压写入重置晶体管并重置储存电容器的电压至参考电压的时间将会不同。基于此，在本实施方式中，通过通道区RCH的宽度RW大于通道区GCH的宽度GW，通道区RCH的宽度RW大于通道区WCH的宽度WW，通道区BCH的宽度BW大于通道区GCH的宽度GW，通道区BCH的宽度BW大于通道区WCH的宽度WW，或通道区GCH的宽度GW大于通道区WCH的宽度WW，以使得与重置晶体管GT3及重置晶体管WT3相比，重置晶体管RT3的通道区RCH或重置晶体管BT3的通道区BCH可让来自参考电压源Vref的较大量的电流通过；或者与重置晶体管WT3相比，重置晶体管GT3的通道区GCH可让来自参考电压源Vref的较大量的电流通过，由此使得在重置阶段期间内，子像素单元W、子像素单元R、子像素单元G以及子像素单元B之间可完成重置操作。
另外，在本实施方式中，驱动晶体管WT1、开关晶体管WT2、重置晶体管WT3、驱动晶体管RT1、开关晶体管RT2、重置晶体管RT3、驱动晶体管GT1、开关晶体管GT2、重置晶体管GT3、驱动晶体管BT1、开关晶体管BT2及重置晶体管BT3为以顶栅极式结构为例。具体而言，如图2所示，以重置晶体管RT3为例，重置晶体管RT3的源极RS3与漏极RD3分别通过接触窗H而与半导体层WL中的源极掺杂区及漏极掺杂区电性连接。然而前述以顶栅极式结构为例仅为了方便理解，本发明所提到的晶体管也可为底栅极式结构，且顶栅极式结构与底栅极式结构的混合搭配也为可行的实施方式。
另外，在图1及图2的实施方式中，虽然像素单元U包括四个子像素单元(即子像素单元W、子像素单元R、子像素单元G以及子像素单元B)，但本发明并不以此为限。在其他实施方式中，像素单元U也可包括三个子像素单元。在以像素单元U包括子像素单元R、子像素单元G以及子像素单元B为例的实施方式中，如前文所述，由于与红色子像素单元及蓝色子像素单元的发光效率相比，绿色子像素单元的发光效率较优异，因此通过储存电容器RC的面积大于储存电容器GC的面积，或是储存电容器BC的面积大于储存电容器GC的面积，以使得与储存电容器GC相比，储存电容器RC或储存电容器BC可储存较大量的电荷，由此可达到子像素单元R、子像素单元G以及子像素单元B之间具有相近的发光亮度。也就是说，在本发明的显示装置10中，通过储存电容器RC、储存电容器GC以及储存电容器BC中的至少两个的面积不相同，由此可达成子像素单元R、子像素单元G以及子像素单元B之间具有相近的发光亮度。
进一步而言，在以像素单元U包括子像素单元R、子像素单元G以及子像素单元B为例的实施方式中，如前文所述，通过通道区RCH的宽度RW大于通道区GCH的宽度GW，或是通道区BCH的宽度BW大于通道区GCH的宽度GW，以使得与重置晶体管GT3相比，重置晶体管RT3的通道区RCH或重置晶体管BT3的通道区BCH可让来自参考电压源Vref的较大量的电流通过，由此使得在重置阶段期间内，储存电容器的面积不完全相同的子像素单元R、子像素单元G以及子像素单元B之间可完成重置操作。也就是说，在本发明的显示装置10中，通过重置晶体管RT3、重置晶体管GT3以及重置晶体管BT3中的至少两个的通道区的宽度不相同，由此使得在重置阶段期间内，子像素单元R、子像素单元G以及子像素单元B之间可完成重置操作。
另外，在图1及图2的实施方式中，虽然储存电容器RC的面积实质上等于储存电容器BC的面积，但本发明并不特别限定储存电容器RC的面积与储存电容器BC的面积之间的关系。因此，根据实际产品的需求，若红色子像素单元的发光效率优于蓝色子像素单元的发光效率，则储存电容器RC的面积可设计成小于储存电容器BC的面积；若蓝色子像素单元的发光效率优于红色子像素单元的发光效率，则储存电容器BC的面积可设计成小于储存电容器RC的面积。
同样地，在本实施方式中，虽然通道区RCH的宽度RW实质上等于通道区BCH的宽度BW，但本发明并不特别限定宽度RW与宽度BW之间的关系。根据实际产品的需求，通道区RCH的宽度RW也可设计成小于通道区BCH的宽度BW，或者通道区RCH的宽度RW也可设计成大于通道区BCH的宽度BW。
综上所述，在本发明的显示装置中，通过至少两个子像素单元中的重置晶体管的通道区的宽度不相同，由此使得在重置阶段期间内，各子像素单元可完成重置操作。
虽然本发明已以实施方式揭示如上，但各种实施方式所描述的各种技术手段，可以在不互相冲突的前提下混合搭配使用。此外，本发明的各种实施方式可以搭配各式触控装置使用，且可应用于手机、平板、笔记型电脑、电视等各式电子装置。举例来说，图3是本发明的一实施方式的触控显示装置的示意图。请参照图3，在本实施方式中，触控显示装置1包括显示装置10、保护盖板20与触控模组30，其中显示装置10上设置有保护盖板20，且保护盖板20上还设置有触控模组30。图3的架构可统称为外挂式(out-cell)触控显示装置。图4是本发明的另一实施方式的触控显示装置的示意图。请参照图4及图3，图4的实施方式与图3的实施方式不同之处在于：触控显示装置1’的触控模组30’设置于保护盖板20’与显示装置10之间，而触控显示装置1的保护盖板20设置于触控模组30与显示装置10之间。图4的架构可统称为内嵌式(in-cell/on-cell)触控显示装置。须知悉的是，触控模组30、30’可为一触控感测层。触控模组30’也可为一设置于基材上的触控感测层，且该基材可为显示装置的密封层、偏光层或是用以承载触控感测层的基材。又或者，触控模组30、30’包含压力感测功能。又或者，显示装置10还结合有触控模组30、30’以及压力感测模组。
虽然本发明已以实施方式揭示如上，然其并非用以限定本发明，任何所属技术领域技术人员，在不脱离本发明的精神和范围内，当可作些许的更改与润饰，故本发明的保护范围当视权利要求书所界定的为准。

Claims (14)

1.一种显示装置，其特征在于，包括：
基板；
驱动信号线，配置于所述基板上；以及
第一子像素单元，配置于所述基板上，其中所述第一子像素单元包括：
第一发光单元；
第一驱动晶体管，与所述驱动信号线及所述第一发光单元电性连接；以及
第一重置晶体管，具有第一通道区且与所述第一发光单元及所述第一驱动晶体管电性连接；以及
第二子像素单元，配置于所述基板上，其中所述第二子像素单元包括：
第二发光单元；
第二驱动晶体管，与所述驱动信号线及所述第二发光单元电性连接；以及
第二重置晶体管，具有第二通道区且与所述第二发光单元及所述第二驱动晶体管电性连接，
其中所述第一通道区的宽度与所述第二通道区的宽度不同，
其中所述第一子像素单元还包括第一储存电容器，所述第一储存电容器与所述第一发光单元、所述第一驱动晶体管及所述第一重置晶体管电性连接，及所述第二子像素单元还包括第二储存电容器，所述第二储存电容器与所述第二发光单元、所述第二驱动晶体管及所述第二重置晶体管电性连接，其中所述第一储存电容器的上电极的面积与所述第二储存电容器的上电极的面积不同。
2.根据权利要求1所述的显示装置，其特征在于，所述第二通道区的宽度大于所述第一通道区的宽度。
3.根据权利要求2所述的显示装置，其特征在于，所述第一子像素单元为绿色子像素单元，所述第二子像素单元为红色子像素单元。
4.根据权利要求2所述的显示装置，其特征在于，所述第一子像素单元为白色子像素单元，所述第二子像素单元为红色子像素单元。
5.根据权利要求2所述的显示装置，其特征在于，所述第一子像素单元为绿色子像素单元，所述第二子像素单元为蓝色子像素单元。
6.根据权利要求2所述的显示装置，其特征在于，所述第一子像素单元为白色子像素单元，所述第二子像素单元为蓝色子像素单元。
7.根据权利要求2所述的显示装置，其特征在于，所述第一子像素单元为白色子像素单元，所述第二子像素单元为绿色子像素单元。
8.根据权利要求2所述的显示装置，其特征在于，还包括第三子像素单元，配置于所述基板上，其中所述第三子像素单元包括第三重置晶体管，所述第三重置晶体管具有第三通道区，且所述第三通道区的宽度大于所述第一通道区的宽度。
9.根据权利要求8所述的显示装置，其特征在于，所述第三子像素单元为蓝色子像素单元。
10.根据权利要求8所述的显示装置，其特征在于，还包括第四子像素单元，配置于所述基板上，其中所述第四子像素单元包括第四重置晶体管，所述第四重置晶体管具有第四通道区，且所述第四通道区的宽度小于所述第一通道区的宽度、所述第二通道区的宽度及所述第三通道区的宽度。
11.根据权利要求10所述的显示装置，其特征在于，所述第四子像素单元为白色子像素单元。
12.根据权利要求1所述的显示装置，其特征在于，所述第二储存电容器的所述上电极的面积大于所述第一储存电容器的所述上电极的面积。
13.根据权利要求12所述的显示装置，其特征在于，所述第一子像素单元为绿色子像素单元，所述第二子像素单元为红色子像素单元。
14.根据权利要求12所述的显示装置，其特征在于，所述第一子像素单元为绿色子像素单元，所述第二子像素单元为蓝色子像素单元。
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Publication number Priority date Publication date Assignee Title
JP2020134716A (ja) * 2019-02-20 2020-08-31 株式会社ジャパンディスプレイ 表示装置
US10885832B1 (en) * 2019-07-08 2021-01-05 Innolux Corporation Display device
JP2022162339A (ja) * 2021-04-12 2022-10-24 株式会社Joled 表示装置、及び表示装置の制御方法
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101221978A (zh) * 2004-04-29 2008-07-16 三星Sdi株式会社 发光板和发光显示器
CN101714523A (zh) * 2008-09-30 2010-05-26 东部高科股份有限公司 图像传感器及其制造方法
CN103247660A (zh) * 2012-02-10 2013-08-14 三星显示有限公司 有机发光二极管显示器
CN104282279A (zh) * 2014-09-28 2015-01-14 京东方科技集团股份有限公司 移位寄存器单元、移位寄存器、栅极驱动电路和显示装置
CN104952417A (zh) * 2015-07-23 2015-09-30 合肥京东方光电科技有限公司 移位寄存器单元及其驱动方法、栅极驱动电路和显示装置
CN106252363A (zh) * 2016-09-29 2016-12-21 上海中航光电子有限公司 阵列基板、显示面板及显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8120077B2 (en) * 2004-12-16 2012-02-21 Panasonic Corporation Solid-state imaging device comprising doped channel stop at isolation regions to suppress noise
JP5580536B2 (ja) * 2009-01-09 2014-08-27 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 表示装置
JP5539104B2 (ja) * 2009-09-24 2014-07-02 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP2015090813A (ja) 2013-11-06 2015-05-11 株式会社ジャパンディスプレイ 表示装置
KR20180001638A (ko) * 2016-06-24 2018-01-05 삼성디스플레이 주식회사 박막 트랜지스터 기판, 및 표시 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101221978A (zh) * 2004-04-29 2008-07-16 三星Sdi株式会社 发光板和发光显示器
CN101714523A (zh) * 2008-09-30 2010-05-26 东部高科股份有限公司 图像传感器及其制造方法
CN103247660A (zh) * 2012-02-10 2013-08-14 三星显示有限公司 有机发光二极管显示器
CN104282279A (zh) * 2014-09-28 2015-01-14 京东方科技集团股份有限公司 移位寄存器单元、移位寄存器、栅极驱动电路和显示装置
CN104952417A (zh) * 2015-07-23 2015-09-30 合肥京东方光电科技有限公司 移位寄存器单元及其驱动方法、栅极驱动电路和显示装置
CN106252363A (zh) * 2016-09-29 2016-12-21 上海中航光电子有限公司 阵列基板、显示面板及显示装置

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