CN108268164A - 触控显示装置 - Google Patents

触控显示装置 Download PDF

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CN108268164A
CN108268164A CN201711247869.6A CN201711247869A CN108268164A CN 108268164 A CN108268164 A CN 108268164A CN 201711247869 A CN201711247869 A CN 201711247869A CN 108268164 A CN108268164 A CN 108268164A
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touch control
thickness
display apparatus
layer
profile
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CN108268164B (zh
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林小郎
乐瑞仁
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Innolux Corp
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Innolux Display Corp
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    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
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    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40OLEDs integrated with touch screens
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Abstract

本公开提供一种触控显示装置,包括:基板及多个显示单元设于基板上,显示单元形成具有第一轮廓的显示区域。触控显示装置更包括:设于显示单元上的绝缘层、设于绝缘层上的多个触控单元及设于触控单元上的抗反射层,触控单元形成具有第二轮廓的触控区域,抗反射层接触触控单元并具有第三轮廓,其中,从垂直基板的第一方向观察,第一轮廓与第二轮廓位于第三轮廓内。

Description

触控显示装置
技术领域
本公开是有关于触控显示装置,且特别是有关于一种具有抗反射层的触控显示装置。
背景技术
随着科技不断的进步,使得各种信息设备不断地推陈出新,例如手机、平板电脑、超轻薄笔电、及卫星导航等。除了一般以键盘或鼠标输入或操控之外,利用触控式技术来操控信息设备是一种相当直觉且受欢迎的操控方式。其中,触控显示装置具有人性化及直觉化的输入操作介面,使得任何年龄层的使用者都可直接以手指或触控笔选取或操控信息设备。
然而,由于触控显示装置中的触控模块或显示模块上的金属材料会反射外界光,而对显示品质造成不好的影像。因此,需要一种可更进一步提升显示品质的具有抗反射层的触控显示装置。
发明内容
本公开提供一种触控显示装置,包括:基板及多个显示单元设于基板上,显示单元形成具有第一轮廓的显示区域。触控显示装置更包括:设于显示单元上的绝缘层、设于绝缘层上的多个触控单元及设于触控单元上的抗反射层,触控单元形成具有第二轮廓的触控区域,抗反射层接触触控单元并具有第三轮廓,其中,从垂直基板的第一方向观察,第一轮廓与第二轮廓位于第三轮廓内。
附图说明
为让本发明的上述目的、特征和优点能更明显易懂,以下结合附图对本发明的具体实施方式作详细说明,其中:
图1是本公开实施例的触控显示装置的上视示意图。
图2是沿图1中的A-A’线的剖面示意图。
图3是本公开实施例的抗反射层的结构剖面示意图。
图4A是本公开另一实施例的触控显示装置的剖面示意图。
图4B是本公开另一实施例的触控显示装置的剖面示意图。
符号说明:
1 触控显示装置;
10 基板;
12 显示区域;
121 显示单元;
122 显示信号线;
14 绝缘层;
16 触控区域;
161 触控单元;
162 触控信号线;
18 抗反射层;
181 第一层别;
182 第二层别;
183 第三层别;
D1 第一方向;
OL1 第一轮廓;
OL2 第二轮廓;
OL3 第三轮廓;
OL4 第四轮廓;
P 凸出部;
R 凹陷部;
H 穿孔;
t1 第一厚度;
t2 第二厚度;
t3 第三厚度;
t4 第四厚度;
t21 第五厚度;
t22 第六厚度。
具体实施方式
以下针对本公开的触控显示装置作详细说明。应了解的是,以下的叙述提供许多不同的实施例或例子,用以实施本公开的不同样态。以下所述特定的元件及排列方式仅为简单清楚描述本公开。当然,这些仅用以举例而非本公开的限定。此外,在不同实施例中可能使用重复的标号或标示。这些重复仅为了简单清楚地叙述本公开,不代表所讨论的不同实施例及/或结构之间具有任何关连性。再者,当述及一第一材料层位于一第二材料层上或之上时,包括第一材料层与第二材料层直接接触的情形。或者,亦可能间隔有一或更多其它材料层的情形,在此情形中,第一材料层与第二材料层之间可能不直接接触。
必需了解的是,附图的元件或装置可以本领域技术人员所熟知的各种形式存在。此外,当某层在其它层或基板“上”时,有可能是指“直接”在其它层或基板上,或指某层在其它层或基板上,或指其它层或基板之间夹设其它层。
此外,实施例中可能使用相对性的用语,例如“较低”或“底部”及“较高”或“顶部”,以描述附图的一个元件对于另一元件的相对关系。能理解的是,如果将附图的装置翻转使其上下颠倒,则所叙述在“较低”侧的元件将会成为在“较高”侧的元件。
在此,“约”、“大约”、“大抵”的用语通常表示在一给定值或范围的20%之内,较佳是10%之内,且更佳是5%之内,或3%之内,或2%之内,或1%之内,或0.5%之内。在此给定的数量为大约的数量,亦即在没有特定说明“约”、“大约”、“大抵”的情况下,仍可隐含“约”、“大约”、“大抵”的含义。
能理解的是,虽然在此可使用用语“第一”、“第二”、“第三”等来叙述各种元件、组成成分、区域、层、及/或部分,这些元件、组成成分、区域、层、及/或部分不应被这些用语限定,且这些用语仅是用来区别不同的元件、组成成分、区域、层、及/或部分。因此,以下讨论的一第一元件、组成成分、区域、层、及/或部分可在不偏离本公开的教示的情况下被称为一第二元件、组成成分、区域、层、及/或部分。
除非另外定义,在此使用的全部用语(包括技术及科学用语)具有与此篇公开所属技术领域的技术人员所通常理解的相同涵义。能理解的是这些用语,例如在通常使用的字典中定义的用语,应被解读成具有一与相关技术及本公开的背景或上下文一致的意思,而不应以一理想化或过度正式的方式解读,除非在此特别定义。
本公开实施例可配合附图一并理解,本公开的附图亦被视为公开说明的一部分。需了解的是,本公开的附图并未以实际装置及元件的比例绘示。在附图中可能夸大实施例的形状与厚度以便清楚表现出本公开的特征。此外,附图中的结构及装置是以示意的方式绘示,以便清楚表现出本公开的特征。
在本公开中,相对性的用语例如“下”、“上”、“水平”、“垂直”、“之下”、“之上”、“顶部”、“底部”等等应被理解为该段以及相关附图中所绘示的方位。此相对性的用语仅是为了方便说明之用,其并不代表其所叙述的装置需以特定方位来制造或运作。而关于接合、连接的用语例如“连接”、“互连”等,除非特别定义,否则可指两个结构是直接接触,或者亦可指两个结构并非直接接触,其中有其它结构设于此两个结构之间。且此关于接合、连接的用语亦可包括两个结构都可移动,或者两个结构都固定的情况。
应注意的是,在后文中“基板”一词可包括半导体晶圆上已形成的元件与覆盖在晶圆上的各种膜层,其上可以已形成任何所需的半导体元件,不过此处为了简化附图,仅以平整的基板表示之。此外,“基板表面”是包括半导体晶圆上最上且暴露的膜层,例如一硅表面、一绝缘层及/或金属线。
本公开实施例提供具有与触控单元接触的抗反射层的触控显示装置,借此可改善触控显示装置的显示品质。
图1是本公开实施例的触控显示装置1的上视示意图。图2是沿图1中的A-A’线的剖面示意图。如图1-2所示,触控显示装置1包括一基板10,且多个显示单元121排列设置于基板10的主要表面上。为了简化说明,于图1-2中仅绘示三个显示单元121,并部分地省略显示单元的驱动电路(例如:晶体管、栅极线、数据线、或电容)。基板10的材料可包括石英、玻璃、金属箔膜、聚甲基丙烯酸甲酯(polymethylmethacrylate,PMMA)、聚酰亚胺(polyimide,PI)、聚对苯二甲酸乙二酯(polyethylene terephthalate,PET)、聚萘二甲酸乙二醇酯(polyethylene naphthalate,PEN)、以及聚萘二甲酸丁二醇酯(polybutylenenaphthalate,PBN)等,但不以此为限。
如图1所示,显示单元121排列以形成一显示区域12,用以显示画面,且显示单元121可包括有机发光二极管(organic light emitting diodes,OLED)、无机发光二极管(inorganic light emitting diodes,LED)、或液晶像素(像素为具有部分电极与部分液晶元件用以显示基本点画面的一个单元)。显示区域12由显示单元121集合的外边界所定义,显示区域12的轮廓包围所有的显示单元121,意即所有的显示单元121皆设置于显示区域12内,显示区域12内的显示单元121用于显示画面。显示单元121的形状可为菱形、多边形、长方形、正方形、三角形、圆形、或其他适合用以显示及布局排列的形状。此外,每个显示单元121包括多个子像素,例如红色子像素、蓝色子像素、及绿色子像素,举例而言,三个子像素可形成一像素。在其他实施例中,显示单元121可包括红色子像素、蓝色子像素、绿色子像素、及白色子像素,或是红色子像素、蓝色子像素、绿色子像素、及黄色子像素。另外,触控显示装置1可更包括多个条显示信号线122电性连接显示单元121,例如栅极线及数据线。触控显示装置1可更包括多个电路元件电性连接显示单元121,例如晶体管及电容。
触控显示装置1可更包括一绝缘层14设置于显示单元121上,绝缘层的材料可为有机绝缘材料,例如光敏树脂(光阻),或是无机绝缘材料,例如氧化硅、氮化硅、氮氧化硅、碳化硅、氧化铝、或上述的组合。
触控显示装置1可更包括多个触控单元161设置于绝缘层14上,触控单元161形成一触控区域16用以检测触控事件,触控区域16由触控单元161集合的外边界所定义,触控区域16的轮廓包围所有的触控单元161,意即所有的触控单元161皆设置于触控区域16内。触控单元161的形状可为菱形、多边形、长方形、正方形、三角形、圆形、条状、网状、或其他适合用以触控感测及布局排列形状。为了简单说明,图1仅绘示出一些触控单元161。触控单元161的材料可为透明导电材料,例如铟锡氧化物(ITO)、氧化锡(SnO)、氧化铟锌(IZO)、氧化铟镓锌(IGZO)、氧化铟锡锌(ITZO)、氧化锑锡(ATO)、氧化锑锌(AZO)、上述的组合或其它任何适合的透明导电氧化物材料,或是金属,例如铜、铝、钼、钨、金、铬、镍、铂、钛、铱、铑、上述的合金、上述的组合或其它适合的金属材料。另一方面,触控显示装置1可更包括多个条触控信号线162电性连接触控单元161及触控驱动芯片(touch driver IC)。
此外,触控显示装置1可更包括一抗反射层18设置于触控单元161上,且可与触控单元161接触,抗反射层18可覆盖至少部分的触控单元161、至少部分的绝缘层14、以及至少部分的触控信号线162,抗反射层18也可与基板10接触。
请继续参阅图1,其为以垂直基板10的第一方向D1观察触控显示装置1的上视示意图。值得注意的是,显示区域12形成有一第一轮廓OL1实质上围绕显示单元121,触控区域16形成有一第二轮廓OL2实质上围绕触控单元161,抗反射层18则形成有一第三轮廓OL3实质上对应抗反射层18的边缘,具体而言,第一轮廓OL1与第二轮廓OL2皆位于第三轮廓OL3内。此外,绝缘层14形成有一第四轮廓OL4实质上对应绝缘层14的边缘,第四轮廓OL4位于第三轮廓OL3内。
由于第一轮廓OL1与第二轮廓OL2皆位于第三轮廓OL3内,也就是说,由第一方向D1(俯视)观察,显示单元121与触控单元161亦位于抗反射层18内。如此一来,降低反射的效果更加显著,并且因为抗反射层18覆盖全部的显示单元121及触控单元161,抗反射层18可保护显示单元121与触控单元161避免水气侵蚀,故可改善触控显示装置1的显示品质,以及提高触控显示装置1的可靠度。
请参阅图2,绝缘层14对应显示区域12在第一方向D1具有一第一厚度t1,抗反射层18对应显示区域12在第一方向D1具有一第二厚度t2,于此实施例中,第一厚度t1大于第二厚度t2。在一些实施例中,第一厚度t1的范围大约介于2微米(μm)到50微米(μm)之间,第二厚度t2的范围则大约介于0.05微米(μm)到20微米(μm)之间,但不以此为限。
触控单元161设置于绝缘层14上,且触控单元161位于绝缘层14与抗反射层18之间,因此需考量绝缘层14的平坦度。此外,抗反射层18是借由破坏性干涉来降低反射,所以第一厚度t1大于第二厚度t2。
图3为本公开实施例的抗反射层18的结构剖面示意图。如图3所示,抗反射层18可包括一第一层别181及一第二层别182。举例而言,在一实施例中,第一层别181可借由旋转涂布法、物理气相沉积法(PVD)、化学气相沉积法(CVD)或其他沉积方式设置于触控单元161上,第一层别181是相邻于触控单元161,并与触控单元161接触。第二层别182设置于第一层别181,第一层别181对应显示区域12于第一方向D1具有一第三厚度t3,第二层别182对应显示区域12于第一方向D1具有一第四厚度t4,第三厚度t3不同于第四厚度t4,举例而言,第三厚度t3大于第四厚度t4。在一些实施例中,第三厚度t3的范围大约介于15纳米(μm)到80纳米(μm)之间,第四厚度t4的范围大约介于5纳米(μm)到15纳米(μm)之间,但不以此为限。第一层别181的材料可为氧化硅、氮化硅、氮氧化硅、氧化铌、氧化钛、氧化锆、或上述的组合及其他适合的绝缘材料,但不以此为限。第二层别182的材料则可为铜、铝、钼、钨、金、银、钴、镍、铂、钛、铱、铑、铌、铬、上述金属的合金、或上述金属的组合或其他适合的金属材料,但不以此为限。
由于第二层别182的材料为金属材料,第四厚度t4不能太厚(小于或等于15纳米),否则触控显示装置1的穿透率会受到不好的影响。
此外,抗反射层18可更包括一第三层别183,设置于第二层别182上。换句话说,第二层别182设置于第一层别181与第三层别183之间。在一些实施例中,第三层别183的厚度及材料与第一层别181类似,但不以此为限。
图4A为本公开另一实施例的触控显示装置1的剖面示意图。值得注意的是,于此实施例中,抗反射层18于第一方向D1形成有多个凹陷部R对应显示单元12,抗反射层18可更形成有多个凸出部P,凹陷部R与凸出部P是彼此交替排列,举例而言,每两个凹陷部R之间具有一个凸出部P,或是每两个凸出部P之间具有一个凹陷部R。此外,抗反射层18对应凹陷部R的其中之一于第一方向D1具有一第五厚度t21,且抗反射层18对应凸出部P的其中之一于第一方向D1具有一第六厚度t22,第五厚度t21小于第六厚度t22。
图4B为本公开另一实施例的触控显示装置1的剖面示意图。值得注意的是,于此实施例中,抗反射层18于第一方向D1形成有多个穿孔H对应显示单元12。
由于抗反射层18可包括凹陷部R或穿孔H对应显示单元12,可因此改善触控显示装置1的穿透率。
综上所述,本公开实施例是提供具有与触控单元161接触的抗反射层18的触控显示装置1。此外,显示区域12的第一轮廓OL1与触控区域16的第二轮廓OL2位于抗反射层18的第三轮廓OL3内,借此可改善触控显示装置1的显示品质。
值得注意的是,以上所述的元件尺寸、元件参数、以及元件形状皆非为本公开的限制条件。所属技术领域的技术人员可以根据不同需要调整这些设定值。另外,本公开的触控显示装置并不仅限于图1-4B所图示的状态。本公开可以仅包括图1-4B的任何一或多个实施例的任何一或多项特征。换言之,并非所有图示的特征均须同时实施于本公开的触控显示装置中。
虽然本公开的实施例及其优点已公开如上,但应该了解的是,任何所属技术领域中具有通常知识者,在不脱离本公开的精神和范围内,当可作更动、替代与润饰。此外,本公开的保护范围并未局限于说明书内所述特定实施例中的制程、机器、制造、物质组成、装置、方法及步骤,任何所属技术领域中具有通常知识者可从本公开揭示内容中理解现行或未来所发展出的制程、机器、制造、物质组成、装置、方法及步骤,只要可以在此处所述实施例中实施大抵相同功能或获得大抵相同结果皆可根据本公开使用。因此,本公开的保护范围包括上述制程、机器、制造、物质组成、装置、方法及步骤。另外,每一申请专利范围构成个别的实施例,且本公开的保护范围也包括各个申请专利范围及实施例的组合。

Claims (10)

1.一种触控显示装置,其特征在于,包括:
一基板;
多个显示单元,设置于该基板上并形成一显示区域,该显示区域具有一第一轮廓;
一绝缘层,设置于该多个显示单元上;
多个触控单元,设置于该绝缘层上并形成一触控区域,该触控区域具有一第二轮廓;以及
一抗反射层,设置于该多个触控单元上并接触该多个触控单元,该抗反射层具有一第三轮廓;
其中沿垂直于该基板的一第一方向观察,该第一轮廓位于该第三轮廓内,且该第二轮廓位于该第三轮廓内。
2.如权利要求1所述的触控显示装置,其特征在于,该绝缘层于该第一方向具有一第一厚度,该抗反射层于该第一方向具有一第二厚度,且该第一厚度大于该第二厚度。
3.如权利要求2所述的触控显示装置,其特征在于,该第一厚度的范围为2微米到50微米。
4.如权利要求1所述的触控显示装置,其特征在于,该抗反射层接触该绝缘层的至少一部分,且该抗反射层接触该基板的至少一部分。
5.如权利要求1所述的触控显示装置,其特征在于,该抗反射层包括一第一层别与一第二层别,该第一层别设置于该多个触控单元与该第二层别之间,该第一层别于该第一方向具有一第三厚度,该第二层别于该第一方向具有一第四厚度,且该第三厚度大于该第四厚度。
6.如权利要求1所述的触控显示装置,其特征在于,该抗反射层包括多个凹陷部对应该多个显示单元。
7.如权利要求6所述的触控显示装置,其特征在于,该抗反射层包括多个凸出部,该多个凸出部与该多个凹陷部是交替排列。
8.如权利要求7所述的触控显示装置,其特征在于,该抗反射层于该第一方向具有一第五厚度对应该多个凹陷部其中之一及一第六厚度对应该多个凸出部其中之一,且该第五厚度小于该第六厚度。
9.如权利要求1所述的触控显示装置,其特征在于,该抗反射层包括多个穿孔对应该多个显示单元。
10.如权利要求1所述的触控显示装置,其特征在于,该绝缘层具有一第四轮廓,且沿该第一方向观察,该第四轮廓位于该第三轮廓内。
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US20200278767A1 (en) 2020-09-03
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