CN108206225A - 一种单晶硅片制绒剂组合物及其应用 - Google Patents
一种单晶硅片制绒剂组合物及其应用 Download PDFInfo
- Publication number
- CN108206225A CN108206225A CN201810022448.1A CN201810022448A CN108206225A CN 108206225 A CN108206225 A CN 108206225A CN 201810022448 A CN201810022448 A CN 201810022448A CN 108206225 A CN108206225 A CN 108206225A
- Authority
- CN
- China
- Prior art keywords
- monocrystalline silicon
- wool
- fine
- chitosan oligosaccharide
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 45
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 12
- 239000000203 mixture Substances 0.000 title abstract description 5
- 210000002268 wool Anatomy 0.000 claims abstract description 42
- 235000008216 herbs Nutrition 0.000 claims abstract description 41
- RQFQJYYMBWVMQG-IXDPLRRUSA-N chitotriose Chemical compound O[C@@H]1[C@@H](N)[C@H](O)O[C@H](CO)[C@H]1O[C@H]1[C@H](N)[C@@H](O)[C@H](O[C@H]2[C@@H]([C@@H](O)[C@H](O)[C@@H](CO)O2)N)[C@@H](CO)O1 RQFQJYYMBWVMQG-IXDPLRRUSA-N 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- CADWTSSKOVRVJC-UHFFFAOYSA-N benzyl(dimethyl)azanium;chloride Chemical compound [Cl-].C[NH+](C)CC1=CC=CC=C1 CADWTSSKOVRVJC-UHFFFAOYSA-N 0.000 claims abstract description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical class CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229960000686 benzalkonium chloride Drugs 0.000 claims abstract description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 47
- 239000000654 additive Substances 0.000 claims description 29
- 230000000996 additive effect Effects 0.000 claims description 29
- 239000007788 liquid Substances 0.000 claims description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 230000006196 deacetylation Effects 0.000 claims description 9
- 238000003381 deacetylation reaction Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 150000002576 ketones Chemical class 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 8
- 238000013082 photovoltaic technology Methods 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 238000003912 environmental pollution Methods 0.000 abstract 1
- 238000009472 formulation Methods 0.000 abstract 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000003643 water by type Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 229920001661 Chitosan Polymers 0.000 description 6
- 229920001542 oligosaccharide Polymers 0.000 description 5
- 150000002482 oligosaccharides Chemical class 0.000 description 5
- 238000005457 optimization Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001720 carbohydrates Chemical group 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810022448.1A CN108206225B (zh) | 2018-01-10 | 2018-01-10 | 一种单晶硅片制绒剂组合物及其应用 |
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CN201810022448.1A CN108206225B (zh) | 2018-01-10 | 2018-01-10 | 一种单晶硅片制绒剂组合物及其应用 |
Publications (2)
Publication Number | Publication Date |
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CN108206225A true CN108206225A (zh) | 2018-06-26 |
CN108206225B CN108206225B (zh) | 2019-10-29 |
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CN201810022448.1A Active CN108206225B (zh) | 2018-01-10 | 2018-01-10 | 一种单晶硅片制绒剂组合物及其应用 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111394797A (zh) * | 2020-05-25 | 2020-07-10 | 彭晓晨 | 一种用于n型单晶硅的正金字塔结构的添加剂制备方法 |
CN112813501A (zh) * | 2020-12-29 | 2021-05-18 | 广东省科学院化工研究所 | 一种单晶硅片制绒添加剂及其应用 |
CN112899791A (zh) * | 2021-01-19 | 2021-06-04 | 阎新燕 | 一种金刚线切割单晶硅片用制绒剂及其制备方法 |
CN114959909A (zh) * | 2021-02-23 | 2022-08-30 | 南通圣威斯特能源科技有限公司 | 一种单晶制绒添加剂、制备方法及其应用 |
CN115073752A (zh) * | 2022-06-27 | 2022-09-20 | 天津鑫泰士特电子有限公司 | 一种低反射率单晶硅用制绒添加剂及其制备方法和应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010091630A (ja) * | 2008-10-03 | 2010-04-22 | Tokyo Ohka Kogyo Co Ltd | パターン微細化用被覆剤、及びそれを用いた微細パターンの形成方法 |
CN106087068A (zh) * | 2016-07-08 | 2016-11-09 | 合肥中南光电有限公司 | 一种壳聚糖‑氨基磺酸单晶硅太阳能电池片表面织构液及其制备方法 |
-
2018
- 2018-01-10 CN CN201810022448.1A patent/CN108206225B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010091630A (ja) * | 2008-10-03 | 2010-04-22 | Tokyo Ohka Kogyo Co Ltd | パターン微細化用被覆剤、及びそれを用いた微細パターンの形成方法 |
CN106087068A (zh) * | 2016-07-08 | 2016-11-09 | 合肥中南光电有限公司 | 一种壳聚糖‑氨基磺酸单晶硅太阳能电池片表面织构液及其制备方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111394797A (zh) * | 2020-05-25 | 2020-07-10 | 彭晓晨 | 一种用于n型单晶硅的正金字塔结构的添加剂制备方法 |
CN112813501A (zh) * | 2020-12-29 | 2021-05-18 | 广东省科学院化工研究所 | 一种单晶硅片制绒添加剂及其应用 |
CN112899791A (zh) * | 2021-01-19 | 2021-06-04 | 阎新燕 | 一种金刚线切割单晶硅片用制绒剂及其制备方法 |
CN114959909A (zh) * | 2021-02-23 | 2022-08-30 | 南通圣威斯特能源科技有限公司 | 一种单晶制绒添加剂、制备方法及其应用 |
CN115073752A (zh) * | 2022-06-27 | 2022-09-20 | 天津鑫泰士特电子有限公司 | 一种低反射率单晶硅用制绒添加剂及其制备方法和应用 |
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CN108206225B (zh) | 2019-10-29 |
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Effective date of registration: 20210315 Address after: 211111 No. 12, Mazhou East Road, Mau Ling Street, Jiangning District, Nanjing, Jiangsu Patentee after: JIANGSU ZHIJU INTELLECTUAL PROPERTY SERVICE Co.,Ltd. Address before: 223 zechu Road, Qianchen village, Zeguo Town, Taizhou City, Zhejiang Province Patentee before: WENLING HANDE HIGH-MOLECULAR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20220303 Address after: 462000 No. 1, Dongfanghong Road, Luohe economic and Technological Development Zone, Henan Province Patentee after: HENAN GCL PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address before: 211111 No. 12, Mazhou East Road, Mau Ling Street, Jiangning District, Nanjing, Jiangsu Patentee before: JIANGSU ZHIJU INTELLECTUAL PROPERTY SERVICE CO.,LTD. |