CN108203830B - 金属线蚀刻液组合物 - Google Patents
金属线蚀刻液组合物 Download PDFInfo
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- CN108203830B CN108203830B CN201711347546.4A CN201711347546A CN108203830B CN 108203830 B CN108203830 B CN 108203830B CN 201711347546 A CN201711347546 A CN 201711347546A CN 108203830 B CN108203830 B CN 108203830B
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- compound
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- film
- copper
- acid
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- 238000005530 etching Methods 0.000 title claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 65
- 239000002184 metal Substances 0.000 title claims abstract description 65
- 239000000203 mixture Substances 0.000 title claims abstract description 58
- 239000007788 liquid Substances 0.000 title description 7
- -1 diol compound Chemical class 0.000 claims abstract description 67
- 125000003277 amino group Chemical group 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007800 oxidant agent Substances 0.000 claims abstract description 15
- 150000003851 azoles Chemical class 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 33
- 229910052802 copper Inorganic materials 0.000 claims description 30
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 21
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 20
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 14
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 13
- 239000011737 fluorine Substances 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 8
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 7
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 7
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 6
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 claims description 6
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 5
- 229960004063 propylene glycol Drugs 0.000 claims description 5
- 235000013772 propylene glycol Nutrition 0.000 claims description 5
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 claims description 4
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 4
- IVDFJHOHABJVEH-UHFFFAOYSA-N pinacol Chemical compound CC(C)(O)C(C)(C)O IVDFJHOHABJVEH-UHFFFAOYSA-N 0.000 claims description 4
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 3
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 3
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims description 3
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 3
- 239000012964 benzotriazole Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 3
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 3
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 3
- 235000011151 potassium sulphates Nutrition 0.000 claims description 3
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 3
- 235000011152 sodium sulphate Nutrition 0.000 claims description 3
- 229960002317 succinimide Drugs 0.000 claims description 3
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 3
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- FOTKYAAJKYLFFN-UHFFFAOYSA-N decane-1,10-diol Chemical compound OCCCCCCCCCCO FOTKYAAJKYLFFN-UHFFFAOYSA-N 0.000 claims description 2
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 claims description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 claims 1
- MFEWNFVBWPABCX-UHFFFAOYSA-N 1,1,2,2-tetraphenylethane-1,2-diol Chemical compound C=1C=CC=CC=1C(C(O)(C=1C=CC=CC=1)C=1C=CC=CC=1)(O)C1=CC=CC=C1 MFEWNFVBWPABCX-UHFFFAOYSA-N 0.000 claims 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 claims 1
- 229940035437 1,3-propanediol Drugs 0.000 claims 1
- ALVZNPYWJMLXKV-UHFFFAOYSA-N 1,9-Nonanediol Chemical compound OCCCCCCCCCO ALVZNPYWJMLXKV-UHFFFAOYSA-N 0.000 claims 1
- PQHYOGIRXOKOEJ-UHFFFAOYSA-N 2-(1,2-dicarboxyethylamino)butanedioic acid Chemical compound OC(=O)CC(C(O)=O)NC(C(O)=O)CC(O)=O PQHYOGIRXOKOEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910017855 NH 4 F Inorganic materials 0.000 claims 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 claims 1
- 239000004146 Propane-1,2-diol Substances 0.000 claims 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims 1
- 229940092714 benzenesulfonic acid Drugs 0.000 claims 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims 1
- PFURGBBHAOXLIO-WDSKDSINSA-N cyclohexane-1,2-diol Chemical compound O[C@H]1CCCC[C@@H]1O PFURGBBHAOXLIO-WDSKDSINSA-N 0.000 claims 1
- VKONPUDBRVKQLM-UHFFFAOYSA-N cyclohexane-1,4-diol Chemical compound OC1CCC(O)CC1 VKONPUDBRVKQLM-UHFFFAOYSA-N 0.000 claims 1
- VCVOSERVUCJNPR-UHFFFAOYSA-N cyclopentane-1,2-diol Chemical compound OC1CCCC1O VCVOSERVUCJNPR-UHFFFAOYSA-N 0.000 claims 1
- SXCBDZAEHILGLM-UHFFFAOYSA-N heptane-1,7-diol Chemical compound OCCCCCCCO SXCBDZAEHILGLM-UHFFFAOYSA-N 0.000 claims 1
- 229940098779 methanesulfonic acid Drugs 0.000 claims 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 64
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052783 alkali metal Inorganic materials 0.000 description 6
- 150000001340 alkali metals Chemical class 0.000 description 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 5
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 5
- 229910001431 copper ion Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 238000011109 contamination Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
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- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IOQLGFCIMRCCNA-UHFFFAOYSA-N 2-(carboxymethylamino)acetic acid Chemical compound OC(=O)CNCC(O)=O.OC(=O)CNCC(O)=O IOQLGFCIMRCCNA-UHFFFAOYSA-N 0.000 description 1
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- IDEOPBXRUBNYBN-UHFFFAOYSA-N 2-methylbutane-2,3-diol Chemical compound CC(O)C(C)(C)O IDEOPBXRUBNYBN-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- BNNMDMGPZUOOOE-UHFFFAOYSA-N 4-methylbenzenesulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1.CC1=CC=C(S(O)(=O)=O)C=C1 BNNMDMGPZUOOOE-UHFFFAOYSA-N 0.000 description 1
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- HJMNHQWHKVNGNB-UHFFFAOYSA-N N(C(C(=O)O)CC(=O)O)C(C(=O)O)CC(=O)O.N(C(C(=O)O)CC(=O)O)C(C(=O)O)CC(=O)O Chemical compound N(C(C(=O)O)CC(=O)O)C(C(=O)O)CC(=O)O.N(C(C(=O)O)CC(=O)O)C(C(=O)O)CC(=O)O HJMNHQWHKVNGNB-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- BWWVAYHQAKOPEK-UHFFFAOYSA-N benzenesulfonic acid;phenylmethanesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1.OS(=O)(=O)CC1=CC=CC=C1 BWWVAYHQAKOPEK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OVYQSRKFHNKIBM-UHFFFAOYSA-N butanedioic acid Chemical compound OC(=O)CCC(O)=O.OC(=O)CCC(O)=O OVYQSRKFHNKIBM-UHFFFAOYSA-N 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- CAPAZTWTGPAFQE-UHFFFAOYSA-N ethane-1,2-diol Chemical compound OCCO.OCCO CAPAZTWTGPAFQE-UHFFFAOYSA-N 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- GXHMMDRXHUIUMN-UHFFFAOYSA-N methanesulfonic acid Chemical compound CS(O)(=O)=O.CS(O)(=O)=O GXHMMDRXHUIUMN-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- OJTDGPLHRSZIAV-UHFFFAOYSA-N propane-1,2-diol Chemical compound CC(O)CO.CC(O)CO OJTDGPLHRSZIAV-UHFFFAOYSA-N 0.000 description 1
- YRVCHYUHISNKSG-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO.OCCCO YRVCHYUHISNKSG-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- VYECFMCAAHMRNW-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O.NS(O)(=O)=O VYECFMCAAHMRNW-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
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- C23F11/14—Nitrogen-containing compounds
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Abstract
本发明公开一种蚀刻金属膜而形成构成半导体线路的薄膜晶体管的栅极及源漏区域的金属线蚀刻液组合物。所述金属线蚀刻液组合物,包括:氧化剂;二元醇化合物;不包含氨基的唑类化合物;及水。
Description
技术领域
本发明涉及金属线蚀刻液组合物,更详细地,涉及一种蚀刻金属膜而形成构成半导体线路的薄膜晶体管的栅极及源漏区域的金属线蚀刻液组合物。
背景技术
在液晶显示器(LCD)等显示屏工业领域中对应屏幕的高品质化、高画质化及大面积化,需要提高液晶显示器(LCD)屏幕的应答速度。为此,使用将构成显示屏的半导体线路的薄膜晶体管(Thin film Transistor,TFT)的栅极(Gate)及源漏(Source Drain,S/D)区域由非以往的铬、铝及其合金的即阻抗较低的铜金属形成,而栅极电极运作时,增加源漏极之间的信道形成速度的方法。并且,为了提高上述铜金属膜与下部的玻璃基板或硅绝缘膜的粘接力,并抑制向硅膜的铜扩散,在上述铜金属膜的下部混用钛(Ti)、钼(Mo)、钛合金(Ti-alloy)、钼合金(Mo-alloy)等中间金属膜,由此,具有如下优点:可根据上述中间金属膜的厚度使得电子的移动速度发生变化,而能够控制电子的移动速度。并且,需去除上述中间金属膜的残渣,而在后续模块工艺时能够阻断因线路的短路引起的驱动不良等。将上述金属膜进行蚀刻而形成金属线的蚀刻液组合物,为了极大化工艺利润,需要蚀刻的金属线的刻蚀剖面优秀,基板的处理张数(竞争性)要多。因此,需要能够满足上述条件,并且,相比以往的产品收率(3,000ppm)更加优秀的组合物。
发明内容
发明要解决的技术问题
从而,本发明的目的为提供一种刻蚀剖面优秀的金属线蚀刻液组合物。本发明的另一目的为提供一种基板的处理张数(经时性)提高的金属线蚀刻液组合物。
解决问题的技术方案
为了实现上述目的,本发明提供一种金属线蚀刻液组合物,包括:氧化剂;胺类化合物;二元醇化合物;不包含氨基的唑类化合物;及水。
并且,本发明提供一种金属线蚀刻液组合物,包括:氧化剂;二元醇化合物;不包含氨基的唑类化合物;胺类化合物;蚀刻剂,包括一个以上选自由硫酸盐化合物、氟基化合物及其混合物形成的群的化合物;及水。
发明的效果
本发明的金属线蚀刻液组合物,在形成需选择性地蚀刻铜/钼或钛及铜合金/钼合金的双层膜及多层膜的铜金属膜的线路时,可获得较快的蚀刻工艺和优秀的锥度刻蚀剖面。并且,为了提高蚀刻液的竞争性,使得蚀刻液从铜离子稳定化,而提高生产收率。
附图说明
图1为测定蚀刻后截面的扫描电子显微镜图片。
具体实施方式
以下,参照附图更详细地说明本发明。
根据本发明的金属线蚀刻液组合物,是蚀刻铜(Cu)、钛(Ti)、钼(Mo)、铜合金(Cu-alloy)、钛合金(Ti-alloy)及钼合金(Mo-alloy)等金属膜而形成半导体线路的金属线,例如作为形成薄膜晶体管的栅极电极及源漏电极的组合物,包括氧化剂、胺类化合物、二元醇化合物及不包含氨基的唑类化合物及水。
所述氧化剂的作用是氧化金属膜,详细地,可使用过氧化氢(H2O2),例如,根据下述反应式1将包含铜(Cu)的金属膜氧化及蚀刻,并且,根据下述反应式2,发生过氧化氢分解反应。所述氧化剂(过氧化氢)的含量是对于整体蚀刻液组合物,为5至25重量%,详细地,为10至25重量%,更详细地,为20至25重量%。在所述氧化剂的含量范围内可获得要得到的蚀刻速度,并且,能够防止过度地蚀刻,而以适当量蚀刻铜金属膜。
[反应式1]
M+H2O2→MO+H2O
[反应式2]
H2O2+M+→.OH+OH-+M2+
在所述反应式1及2中,M是指铜、钛、钼、铜合金、钛合金及钼合金等金属膜。
所述胺类化合物的作用是在铜金属的蚀刻时与二价铜离子进行配体结合(与金属离子的配位结合),而螯合(chelating)铜离子,使得铜离子稳定化,提高蚀刻能力,增加处理张数。所述胺类化合物是,例如,为水溶性配体剂,琥珀酸(succinic acid)、琥珀酰亚胺(succinimide)、亚氨基二乙酸(Iminodiacetic acid)、亚氨基二琥珀酸(Iminodisuccinicacid)或其混合物等,详细地,可示例亚氨基二乙酸。所述胺类化合物的含量是对于蚀刻液整体,为0.01至5重量%,详细地,为0.1至3重量%,更详细地,为2至3重量%。所述胺类化合物的含量在所述范围内时,可使得铜离子稳定化,并提高蚀刻能力。
所述二元醇化合物起到在蚀刻液内使得氧化剂(过氧化氢)稳定化的稳定剂的作用,使得药液的寿命延长,例如,可将以往的碱金属的污染浓度3,000至4,000ppm延长至7,000ppm。简略地说明所述二元醇化合物的机制,随着处理张数增加,金属污染浓度成比例地增加,因碱金属(例如Cu2+等)发生过氧化氢的自由基分解,如果所述碱金属过剩存在,使得与过氧化氢持续地反应进行分解,其成为使得过氧化氢急速分解的要因,而成为发热及爆发等危险因素,因此,使用二元醇化合物,即使所述碱金属过剩存在,也能够静电式地稳定化,防止与过氧化氢反应,而提高生产工艺的收率。并且,所述二元醇化合物对EPD(Endpoint detect)、CD-Bias、Taper angle等的蚀刻特性产生较小的影响,因此,能够使用,如果使用一元醇或三元醇等,对所述蚀刻特性产生影响,即变动性大,因此,难以利用。
所述二元醇化合物为乙二醇化合物,详细地,乙二醇(1,2-ethanediol)、二甘醇(Diethyleneglycol)、丙烷-1,2-二醇(propane-1,2-diol)、三甘醇(Triethyleneglycol),1,2-丙二醇(Trimethyleneglycol)、1,3-丙二醇(1,3-propanediol)、丙二醇(PropyleneGlycol)、1,4-丁二醇、1,5-戊二醇、1,6-己二醇、1,7-庚二醇、1,8-辛二醇、1,9-壬二醇、1,10-癸二醇、频哪醇、氢化苯偶姻、苯频哪醇、环戊烷-1,2-二醇、环己烷-1,2-二醇、环己烷-1,4-二醇或其混合物等,更详细地,为二甘醇(DEG)。所述二元醇化合物的含量是对于蚀刻液整体为0.1至10重量%,详细地,为1至7重量%,更详细地,为1至5重量%。所述二元醇化合物的含量超过所述范围时,无法获得要提高生产工艺的收率的效果。
不包括所述氨基的唑类化合物(环状胺类化合物)的作用是,在包含铜的金属层的上部及下部形成与铜不同的金属层的多层膜上调整所述铜与其他金属(例如,钛、钼、钛合金、钼合金等)之间的蚀刻速度。并且,所述唑类化合物能够减少通过蚀刻形成的金属线的切割尺寸损失(cut dimension loss,CD loss),从而,使得形成的金属线能够以栅极及数据线路有用地使用。所述唑类化合物是包含氮原子的五元杂环(5-membered heterocyclicring)化合物,例如,为甲基四氮唑(5-methyltetrazole_MTZ)、苯并三唑(benzotriazole)、咪唑(imidazole)、吡唑(pyrazole)、甲基苯并三氮唑(tolytriazole)或其混合物等,详细地,为甲基四氮唑。并且,所述唑类化合物不包含氨基。如果唑类化合物包含氨基,通过与金属离子(Cu2+等)的反应进行分解,而作为蚀刻抑制剂的寿命缩短,或不稳定化,因此,所述唑类化合物不包含氨基,与所述金属离子不产生反应,由此,能够延长作为蚀刻抑制剂的寿命,并且,稳定性优秀。
不包含所述氨基的唑类化合物的含量,对于蚀刻液整体,为0.03至1.5重量%,详细地,为0.05至1.2重量%,更详细地,为0.08至0.7重量%。如果不包含所述氨基的唑类化合物的含量在所述范围内,能够获得适当的蚀刻速度及优秀的线路的直进性。并且,如果包含得过少时,无法调整铜的蚀刻速度,而发生过度的蚀刻,或增加CD损失,并且,使得线路的直进性低下,从而,适用于量产工艺时,也可能引起深刻的问题,并可能使得形成的金属线的刻蚀剖面不良,而如果包含得过多,则使得蚀刻速度低下,使蚀刻工艺的时间延长。
剩余的所述水的含量为使得蚀刻液总重量成为100%。
所述金属线蚀刻液组合物还可包括包含一个以上选自硫酸盐化合物、氟基化合物及其混合物形成的群的化合物的蚀刻剂。
所述蚀刻剂为铜金属膜的辅助氧化剂,起到调整铜的蚀刻速度的作用,或金属膜的阻障(barrier)膜即钛、钼,钛合金、钼合金的蚀刻时,在双层膜或多层膜中形成锥度角的作用,包括一个以上硫酸盐化合物、氟基化合物及其混合物,详细地,同时包括硫酸盐化合物及氟基化合物。
所述硫酸盐化合物为铜金属膜的辅助氧化剂,起到调整铜的蚀刻速度的作用,例如,为硫酸钠(sodium sulfate)、硫酸钾(potassium sulfate)、硫铵(ammonium sulfate),过硫酸钠(sodium persulfate)、过硫酸钾(potassium persulfate)、过硫酸铵(ammoniumpersulfate)、硝酸铵(ammonium nitrate)、苯磺酸(benzenesulfonic acid)、对甲苯磺酸(p-toluenesulfonate)、硫酸铵(ammonium sulfate acid)、磺酰胺酸(amidosulfonicacid)、甲磺酸(methanesulfonic acid)、环状磺酸化合物(cyclic sulfonic acid)、碳氢基磺酸化合物其混合物等,详细地,为甲磺酸。
所述氟基化合物的作用是在蚀刻金属膜的阻障(barrier)膜即钛、钼、钛合金、钼合金的蚀刻时,在双层膜或多层膜中形成锥度角。所述氟基化合物的详细的示例为,氢氟酸(KF)、氟化钠(NaF)、氟化铵(NH4F)、氟化氢铵(NH4HF2)、氟硅酸(H2SiF6)、氟硼酸(HBF4)、氟钛酸(H2TiF6)、氟锆酸(H2ZrF6)或其混合物等,详细地,为氟化氢铵(NH4HF2)。
所述蚀刻剂的含量是对于整体蚀刻液组合物,为0.01至5重量%,详细地,为0.5至3重量%,更详细地,为1至2重量%。如果所述蚀刻剂的含量超过所述范围,可能导致作为蚀刻剂的效率降低。
更详细地,所述硫酸盐化合物的含量是对于整体蚀刻液组合物,为0.01至5重量%,详细地,0.5至3重量%,更详细地,为1至2重量%。如果所述硫酸盐化合物的含量过少,难以蚀刻铜膜,如果在所述范围内,能够使得铜膜的蚀刻速度较快,使得工艺上的调整容易。并且,所述氟基化合物的含量是对于整体蚀刻液组合物,为0.01至1重量%,详细地,为0.05至0.2重量%,更详细地,为0.07至0.15重量%。如果所述氟基化合物的含量过少,阻障(barrier)膜的蚀刻速度降低,形成锥度角的不良,出现下部膜的残膜不良,如果含量过多,导致金属膜下部的玻璃膜被蚀刻,或阻挡膜被多度地蚀刻。
作为本发明的蚀刻液组合物,剩余的成分为水,详细地,为脱离子水(deionizedwater,DI)、蒸馏水等。根据本发明的蚀刻液组合物,根据需要在实现发明的目的及效果的范围内还可包括pH调节剂、防腐剂等通常的添加剂。根据本发明的蚀刻液组合物可通过公知的任意方法制造。例如,将所述二元醇化合物、不包括氨基的唑类化合物、胺类化合物、硫酸盐化合物及氟基化合物等以所需的浓度添加在脱离子水、蒸馏水等水介质后,以所需的浓度添加所述过氧化氢,而制造本发明的组合物。
根据本发明的蚀刻液组合物,可进行栅极及源漏(2种)的统一蚀刻,并且,相比以往使得处理张数2倍增加,而提高生产收率,可适用于开口率增加的高分辨率。并且,锥度的变动较低,而能够最小化TFT-复合膜构成的堆叠(stack)不良。
根据本发明的蚀刻液组合物适用于蚀刻金属膜而形成半导体线路的金属线。通过本发明的组合物被蚀刻的金属膜包括:包含铜(Cu)的单一金属膜,包含铜合金膜的合金膜及上部膜的铜膜,作为下部膜,可示例包括至少一个以上的钛膜、钛合金膜、钼膜及钼合金膜等的多层膜等。并且,在蚀刻所述多层膜时,可将所述上部膜及所述下部膜统一或选择性地进行蚀刻。
根据本发明的金属线形成方法,作为半导体等集成线路的制造,在基板上形成由所述铜单一膜或铜/钛、铜/钼、铜/钛合金及/或铜/钼合金形成的多层膜等金属膜,并在所述金属膜的上面形成光刻胶图案。然后,将所述光刻胶图案以蒙板使用,而在所述金属膜上接触本发明的蚀刻液组合物将所述金属膜进行蚀刻,从而,形成金属线,例如,栅极电极或源漏电极。
以下,通过实施例更详细地说明本发明,但,本发明并非限定于下述实施例。
[实施例1至8及比较例1至13]蚀刻液组合物的制造
为了评价蚀刻液组合物的蚀刻性能,制造了包括下述表1中表示的化合物及剩余水(deionized)的蚀刻液组合物(实施例1至8,比较例1至13)。在此,过氧化氢是指过氧化氢、IDA是指亚氨基二乙酸、ABF是指氟化铵、DEG是指二甘醇、MTZ是指5-甲基四氮唑、ATZ是指5-氨基四唑。
【表1】
[实验例1]蚀刻液组合物的评价
在铜/钼及铜/钼合金双层膜上形成光刻胶图案,并终点检测使用实施例1至8及比较例1至13的蚀刻液组合物由垂直截面蚀刻的时间(EPD:End Point Detection),并以此为基准,进行过蚀刻(over etching)。通过扫描电子显微镜观察被蚀刻的金属膜的截面,并将蚀刻速度、偏侧CD变化range、锥度变化range及处理张数表示在下述表2中。在此,range值是对于竞争性的判断标准,判断药液的处理张数,提高生产收率,并且,CD skew(criticaldimension skew)是指光刻胶图案末端与下部膜或Barrier膜末端之间的距离,为了使得段差较少,而均匀地锥度蚀刻,要形成偏侧0.5至0.8μm。并且,锥度角是从被蚀的金属膜的侧面观察的倾斜,45至60°为适合。在此,◎是指"非常优秀"(蚀刻速度:/sec/CD变化range:偏侧≤0.1μm/Taper变化range:≤5°/处理张数:≥7000ppm)、○是指"良好"(蚀刻速度:/sec/CD变化range:偏侧0.11~0.20μm/Taper变化range:6°~9°/处理张数:4000~5000ppm)、△是指"不良"(蚀刻速度:/secor/sec/CD变化range:偏侧≥0.20μm/Taper变化range:≥10°/处理张数:≤3000ppm)。
【表2】
图1为蚀刻后测定截面的扫描电子显微镜图片。图1是实施例及比较例评价的基准,如在表2中表示,可知晓不包含过氧化氢的比较例1相比实施例1至8,蚀刻速度、偏侧CD、锥度角及处理张数均不良,并且,使用包含氨基的唑类化合物的比较例9,相比使用不包含氨基的唑类化合物的实施例1至8,锥度角及处理张数出现不良,而能够知晓不包含氨基的唑类化合物对于蚀刻速度、锥度角及处理张数产生影响。
并且,使用不包含氨基的唑类化合物,胺类化合物(IDA)的含量较低的比较例4,不仅锥度角及处理张数不良,偏侧CD不也良,从而,能够知晓胺类化合物对于偏侧产生影响,并且,代替二元醇化合物而使用三元醇化合物的比较例11,除了蚀刻速度的偏侧CD、锥度角及处理张数不良。
并且,所述实施例6及7,如果包含氟基化合物或硫酸盐基化合物,偏侧、锥度角及处理张数表现非常优秀,不同时包括氟基化合物和硫酸盐化合物的实施例8也偏侧CD、锥度角及处理张数非常优秀,不包含胺类化合物的比较例4及不包含二元醇的比较例5,蚀刻速度表现良好,但,其他特性表现不良,包括包含氨基的唑类化合物的比较例9,蚀刻速度表现不良。由此,能够知晓使用本发明的蚀刻液组合物时,蚀刻速度、偏侧CD、锥度角及处理张数优秀,尤其,处理张数优秀,而使得药液的寿命相比以往延长。
并且,使用超过数值限定范围的硫酸铵蚀刻剂的比较例3,蚀刻速度、偏侧CD、Taper range、处理张数均为良好的水平,但,发生因过蚀刻引起的局部侵蚀,需蚀刻剂的数值范围不超过5%,并且,使用超过数值限定范围的二元醇的比较例6表现收率不良。
并且,使用小于数值限定范围的过氧化氢的比较例12不仅蚀刻速度不良,偏侧CD、锥度角及处理张数也不良,使用包含氨基的唑类化合物的比较例13,如果小于数值限定范围,蚀刻速度、偏侧CD、处理张数不良。
Claims (6)
1.一种金属线蚀刻液组合物,其特征在于,包括:
氧化剂;
胺类化合物;
二元醇化合物;
不包含氨基的唑类化合物;
蚀刻剂,包含一个以上选自由硫酸盐化合物、氟基化合物及其混合物形成的群的化合物;及
水,
其中对于整体蚀刻液组合物,所述氧化剂的含量为5至25重量%,所述胺类化合物的含量为0.01至5重量%,所述二元醇化合物的含量为0.1至10重量%,所述不包含氨基的唑类化合物为0.03至1.5重量%,所述蚀刻剂的含量为0.01至5重量%,剩余的含量为水,
所述氧化剂为过氧化氢,
所述胺类化合物选自由琥珀酸、琥珀酰亚胺、亚氨基二乙酸、亚氨基二琥珀酸及其混合物形成的群,
所述二元醇化合物选自由乙二醇、二甘醇、丙烷-1,2-二醇、三甘醇、1,2-丙二醇、1,3-丙二醇、丙二醇、1,4-丁二醇、1,5-戊二醇、1,6-己二醇、1,7-庚二醇、1,8-辛二醇、1,9-壬二醇、1,10-癸二醇、频哪醇、氢化苯偶姻、苯频哪醇、环戊烷-1,2-二醇、环己烷-1,2-二醇、环己烷-1,4-二醇及其混合物形成的群,以及
不包含所述氨基的唑类化合物选自由甲基四氮唑、苯并三唑、咪唑、吡唑、甲基苯并三氮唑及其混合物形成的群。
2.根据权利要求1所述的金属线蚀刻液组合物,其特征在于,
所述硫酸盐化合物是选自由硫酸钠、硫酸钾、过硫酸钠、过硫酸钾,过硫酸铵、硫铵、硝酸铵、苯磺酸、对甲苯磺酸、硫酸铵、磺酰胺酸、甲磺酸、环状磺酸化合物、碳氢基磺酸化合物及其混合物形成的群。
3.根据权利要求1所述的金属线蚀刻液组合物,其特征在于,
所述氟基化合物选自由KF、NaF、NH4F、NH4HF2、H2SiF6、HBF4、H2TiF6、H2ZrF6及其混合物形成的群。
4.根据权利要求1所述的金属线蚀刻液组合物,其特征在于,
对于整体蚀刻液组合物,所述氧化剂的含量为10至25重量%,所述二元醇化合物的含量为1至7重量%,所述不包含氨基的唑类化合物的含量为0.05至1.2重量%,所述胺类化合物的含量为0.1至3重量%,所述蚀刻剂的含量为0.5至3重量%,剩余的含量为水。
5.根据权利要求1所述的金属线蚀刻液组合物,其特征在于,
金属线路是由铜、钛、钼、铜合金、钛合金及钼合金形成的群选择一个以上。
6.根据权利要求1至5中任一项所述的金属线蚀刻液组合物,其特征在于,
所述金属线包括包含铜的单一金属膜、包含铜合金膜的合金膜及上部膜的铜膜,下部膜选自由多层膜形成的群,所述多层膜选自由钛、钛合金、钼、钼合金形成的群。
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