CN108172573A - 适用于35GHz交流频率下工作的GaN整流器及其制备方法 - Google Patents

适用于35GHz交流频率下工作的GaN整流器及其制备方法 Download PDF

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CN108172573A
CN108172573A CN201711351659.1A CN201711351659A CN108172573A CN 108172573 A CN108172573 A CN 108172573A CN 201711351659 A CN201711351659 A CN 201711351659A CN 108172573 A CN108172573 A CN 108172573A
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CN108172573B (zh
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王文樑
李国强
李筱婵
李媛
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South China University of Technology SCUT
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Abstract

本发明公开了适用于35GHz交流频率下工作的GaN整流器的制备方法：在硅衬底上依次生长N极性面GaN缓冲层、碳掺杂半绝缘化N极性面GaN层、非掺杂N极性面AlGaN层、非掺杂N极性面GaN层和非掺杂N极性面InGaN薄膜，得到整流器外延片；在GaN整流器外延上制备肖特基接触电极图案凹槽，并在凹槽中沉积肖特基接触电极；制备欧姆接触电极图案，并在外延片表面沉积器件欧姆接触电极；随后在外延片表面无电极部分沉积氮化硅钝化层，制备表面电极区域；最后再对GaN整流器外延片进行台面隔离处理。本发明实现了高频GaN整流器的制备，提高整流器件在大功率工作下的性能稳定性。

Description

适用于35GHz交流频率下工作的GaN整流器及其制备方法
技术领域
本发明涉及整流器，特别涉及适用于35GHz交流频率下工作的GaN整流器及其制备方法。
背景技术
整流器作为一种在国防、传能等领域具有重要作用的功率电子元器件而备受各界关注。传统的Si基整流晶闸管由于材料本身禁带宽度窄、电子饱和迁移速率低、热导系数低等缺点，造成器件体积大、反向漏电流大、中频工作条件下发热严重，性能稳定性等问题，难以满足日益增长的器件小型化、集成化、高频化需求，因此急需开发一种能应用与高频领域并同时满足器件小型化、集成化应用需求的新一代整流器件。关于以GaN为代表的III族氮化物整流器的研究由此兴起。以GaN为代表的第三代氮化物半导体材料相比于传统Si基材料，具有更宽的禁带宽度、更高的临界击穿电场、更高的极限工作温度与饱和电子迁移率等优异特性意味着GaN整流器件相比于Si基整流晶闸管更适合应用于高压、高频的工作场合，更优异的导热特性更赋予了GaN整流器在小型化、集成化应用领域更广阔的应用前景与性能稳定性。因此，探索35GHz高交流频率下工作的GaN整流器的实现方法具有开创性的革命意义与社会应用价值。
发明内容
为了克服现有技术的上述缺点与不足，本发明的目的在于提供一种适用于35GHz交流频率下工作的GaN整流器的制备方法，该方法具有制备，与现有生产手段匹配性高且易于实现的优点。
本发明的目的通过以下技术方案实现：
适用于35GHz交流频率下工作的GaN整流器的制备方法，包括以下步骤：
(1)在硅衬底上依次生长N极性面GaN缓冲层、碳掺杂半绝缘化N极性面GaN层、非掺杂N极性面AlGaN层、非掺杂N极性面GaN层和非掺杂N极性面InGaN薄膜，得到整流器外延片；
(2)将步骤(1)所得GaN整流器外延片依次置于丙酮、去离子水、无水乙醇中超声处理，拿出后经去离子水清洗再用热高纯氮气吹干；
(3)对步骤(2)得到的GaN整流器外延片进行肖特基接触电极图案光刻制备：通过旋涂匀胶在步骤(2)所得GaN整流器外延片上均匀涂抹光刻胶，将涂有光刻胶的GaN整流器外延片进行预烘，随后放入光刻机中进行曝光，最后将曝光后的外延片浸入显影液中进行光刻显影并清洗；
(4)对光刻后GaN整流器外延片进行反应离子刻蚀，在GaN整流器外延片中，沿肖特基接触电极图案刻蚀出凹槽，得到欧姆接触电极；
(5)将步骤(4)所得刻有欧姆接触电极对应图案凹槽的GaN整流器外延片放入电子束蒸发设备中，对蒸发腔体抽真空，随后依次蒸镀肖特基接触电极金属，蒸镀结束后，对GaN整流器外延片进行退火；
(6)将GaN整流器外延片浸入去胶液后去除，使用去离子水冲洗并使用丙酮对GaN整流器外延片表面残留的光刻胶与蒸镀金属进行超声处理去除，超声后再经去离子水清洗，再用热高纯氮气吹干；
(7)通过掩膜板中的对准标记，对GaN整流器外延片进行对准，重复步骤(3)工艺，在相应位置上光刻显影，制备器件欧姆接触电极图案并清洗；
(8)对GaN整流器外延片进行欧姆接触电极制备：将步骤(7)所得光刻显影出欧姆接触电极图案的GaN整流器外延片放入电子束蒸发设备中，对蒸发腔抽真空，随后依次蒸镀欧姆接触电极金属，蒸镀结束后，对GaN整流器外延片进行退火；
(9)重复步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN外延片表面残留的光刻胶与蒸镀金属；
(10)使用等离子体增强化学气相沉积方法制备氮化硅钝化层：将步骤(9)所得的GaN整流器外延片放入等离子体增强化学气相沉积设备中，升温并在抽高真空后通入载气与反应气体，在GaN整流器外延片表面沉积SiNx钝化层；其中x＝1.33-1.5；
(11)重复步骤(3)工艺，通过光刻显影在GaN外延片表面制备掩膜板，将欧姆接触电极与肖特基接触电极图案上的SiNx暴露出来；
(12)使用湿法刻蚀方法，将暴露出来的SiNx刻蚀掉，最后重复步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN整流器外延片表面残留的光刻胶与氮化硅钝化层并清洗；
(13)通过掩膜板对准标记对准，重复步骤(3)工艺，在GaN外延片表面光刻显影制备台面隔离图案；
(14)台面隔离：重复步骤(4)工艺，使用反应离子刻蚀设备，对步骤(13)得到的GaN整流器外延片表面进行凹槽刻蚀并清洗；
(15)台面隔离钝化层制作：将步骤(14)所得的GaN整流器外延片放入等离子体辅助化学气象沉积设备中，重复步骤(10)工艺，在GaN整流器外延片刻蚀凹槽内沉积SiNx钝化层；
(16)使用步骤(12)湿法腐蚀工艺去除步骤(15)处理后的GaN整流器外延片表面多余SiNx层后，采用步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN整流器外延片表面残余SiNx与光刻胶；最后制得硅衬底上适用于35GHz交流频率下工作的GaN整流器芯片。
步骤(1)所述的硅衬底以(111)密排面为外延面；
所述N极性面GaN缓冲层、碳掺杂半绝缘化N极性面GaN层、非掺杂N极性面AlGaN层、非掺杂N极性面GaN层和非掺杂N极性面InGaN薄膜均以(0001)为外延方向。
步骤(2)和步骤(6)所述超声处理的时间均为3～15min。
步骤(3)所述光刻胶的厚度在0.2～0.7μm；所述曝光的时间为1～4s；所显影的时间为45～95s。
步骤(4)所述凹槽的深度为150～400nm。
步骤(5)和(8)所述真空的真空度均为1～5×10-5Pa；步骤(5)和(8)所述退火的温度均为450～800℃，所述退火的时间均为30～120min。
步骤(6)所述浸泡时间为45～100min。
步骤(10)和步骤(15)所述SiNx钝化层的沉积时间均为60～120min。
步骤(14)所述凹槽的深度为1～2.5μm。
适用于35GHz交流频率下工作的GaN整流器，由所述适用于35GHz交流频率下工作的GaN整流器的制备方法制备得到。
与现有技术相比，本发明具有以下优点和有益效果：
(1)本发明实现了高频(35GHz)GaN整流器的制备，在肖特基接触电极结构设计部分采用T型栅设计方案，能够有效提高整流器件栅控特性并有效减少整流器件工作过程中的电流集中效应，提高整流器件在大功率工作下的性能稳定性。
(2)本发明使用以GaN为代表的III族氮化物作为整流器基础材料，依托于III族氮化物相比与传统Si材料更加优异的材料特性，能更好地实现器件在更高频应用上的小型化与集成化。
(3)本发明使用N极性面III族氮化物作为器件基底材料，相比于传统金属极性面III族氮化物，可有效增强AlGaN/GaN异质结界面处的二维电子气限阈性并增强器件栅控性，易于制作性能更适用于35GHz交流频率下工作的增强型整流器件。
(4)本发明选用集成电路最普遍应用的Si材料作为器件外延衬底，易于实现器件集成应用。
附图说明
图1是本发明的实施例1制备GaN整流器芯片的截面示意图。
图2是本发明的实施例1的GaN(0002)X射线摇摆曲线图。
图3是本发明的实施例1的GaN外延片表面形貌原子力显微镜图。
具体实施方式
下面结合实施例，对本发明作进一步地详细说明，但本发明的实施方式不限于此。
实施例1
本实施例的硅衬底上适用于35GHz交流频率下工作的GaN整流器芯片的制备方法：
(1)如图1所示，采用金属有机物化学气相沉积技术在硅衬底上生长GaN整流器外延片，包括生长在硅衬底1上的N极性面GaN缓冲层2，生长在N极性面GaN缓冲层2上的碳掺杂半绝缘化N极性面GaN层3，其掺杂浓度为5.9×1018cm-3，生长在碳掺杂半绝缘化N极性GaN薄膜3上的非掺杂N极性面AlGaN层4，生长在非掺杂N极性面AlGaN层4上的非掺杂N极性面GaN层5，生长在非掺杂N极性面GaN层5上的非掺杂N极性面InGaN薄膜6；所述GaN缓冲层厚度为800nm；所述碳掺杂GaN层厚度4为100nm；所述非掺杂AlGaN层厚度为450nm；所述非掺杂GaN层厚度为500nm；所述非掺杂InGaN层厚度为150nm。
(2)将GaN整流器外延片依次置于丙酮、无水乙醇、去离子水中各自超声3min，去除后经去离子水冲洗，冲洗后的GaN整流器外延片用热高纯氮气吹干。
(3)对清洗后的GaN整流器外延片旋涂正性光刻胶，型号为RZJ304，光刻胶厚度为0.3μm，将涂有光刻胶的外延片置于热台上预烘45s，随后将涂有光刻胶的外延片放入光刻机中进行曝光，曝光时间为3s，再之后将曝光后的外延片浸泡入正性显影液中，显影液型号为RZX3038，浸泡时间为60s，最后将显影完成的外延片取出，用去离子水冲洗并用热高纯氮气吹干，置于热台上烘烤坚膜，烘烤时间为45s。
(4)将光刻后GaN整流器外延片置入反应离子刻蚀机中对光刻暴露出的肖特基接触电极8图案进行反应离子刻蚀，刻蚀出对应图案的凹槽，凹槽深度为200nm。
(5)对GaN整流器外延片进行肖特基接触电极8制备：将经反应离子刻蚀后的GaN整流器外延片放入电子束蒸发设备中，将腔体真空度抽至1×10-5Pa，随后依次蒸镀电极金属MoS2/Ni/Au，蒸镀结束后，对GaN整流器外延片进行退火，退火温度500℃，退火时间60min。
(6)将制备好欧姆电极的GaN整流器外延片浸入去胶液中浸泡60min，捞出后用去离子水冲洗并置于丙酮中超声5min，拿出后经去离子水冲洗并用热氮气吹干。
(7)通过掩膜板中的对准标记，对GaN整流器外延片进行对准，重复步骤(3)光刻工艺，在相应位置上光刻显影，制备GaN整流器外延片上暴露出器件肖特基接触电极图案区域。
(8)对光刻后GaN整流器外延片进行欧姆接触电极9制备：将制备有器件欧姆接触图案的GaN整流器外延片放入电子束蒸发设备中，将腔体真空度抽至1×10-5Pa，随后依次蒸镀欧姆接触电极物质Ti/Al/Ni/Au。
(9)重复步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN外延片表面残留的光刻胶与蒸镀金属。
(10)使用等离子体增强化学气相沉积方法制备SiNx钝化层7：将制备好电极的GaN整流器外延片放入等离子体增强化学气相沉积设备中，仪器升温至800℃，腔体真空度抽至1×10-5Pa，沉积时间60min。
(11)重复步骤(3)工艺，通过光刻显影在GaN外延片表面制备掩膜板，将欧姆接触电极与肖特基接触电极图案上的SiNx(x＝1.33-1.5)暴露出来；
(12)使用湿法刻蚀方法，将暴露出的SiNx钝化层刻蚀掉，取出后用去离子水冲洗，最后重复步骤(6)工艺，通过去胶液浸泡与超声清洗去除外延片表面残留的光刻胶与SiNx；
(13)通过掩膜板对准标记对准，重复步骤(3)工艺，在GaN外延片表面光刻显影制备台面隔离图案；
(14)台面隔离图形刻蚀：重复步骤(4)工艺，使用反应离子刻蚀设备，对步骤(13)得到的GaN整流器外延片表面进行凹槽刻蚀，刻蚀深度为2μm，刻蚀完毕后使用去离子水冲洗外延片表面并用热氮气吹干；
(15)台面隔离钝化层制作：GaN整流器外延片放入等离子体辅助化学气象沉积设备中，重复步骤(10)工艺，在GaN整流器外延片刻蚀凹槽内沉积SiNx钝化层，沉积时间60min；
(16)使用步骤(12)湿法腐蚀工艺去除表面多余SiNx层后，采用步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN整流器外延片表面残余SiNx与光刻胶。最后制得硅衬底上适用于35GHz交流频率下工作的GaN整流器芯片。
本实施例制得的GaN整流器结构如图1所示，GaN薄膜的GaN(0002)X射线摇摆曲线如图2所示，半高宽值为0.0096°。GaN外延片表面形貌原子力显微镜图如3所示，表面微观形貌呈现平滑理想的层流状结构，表面粗糙度RMS≤0.9埃，表面形貌和晶体质量均十分良好。
实施例2
本实施例的硅衬底上适用于35GHz交流频率下工作的GaN整流器芯片的制备方法：
(1)采用金属有机物化学气相沉积技术在硅衬底上生长GaN整流器外延片，包括生长在硅衬底上的N极性面GaN缓冲层，生长在N极性面GaN缓冲层上的碳掺杂半绝缘化N极性面GaN层，其掺杂浓度为5.9×1018cm-3，生长在碳掺杂半绝缘化N极性GaN薄膜上的非掺杂N极性面AlGaN层，生长在非掺杂N极性面AlGaN层上的非掺杂N极性面GaN层，生长在非掺杂N极性面GaN层上的非掺杂N极性面InGaN薄膜；所述GaN缓冲层厚度为600nm；所述碳掺杂GaN层厚度为150nm；所述非掺杂AlGaN层厚度为300nm；所述非掺杂GaN层厚度为400nm；所述非掺杂InGaN层厚度为70nm。
(2)将GaN整流器外延片依次置于丙酮、无水乙醇、去离子水中各自超声3min，去除后经去离子水冲洗，冲洗后的GaN整流器外延片用热高纯氮气吹干。
(3)对清洗后的GaN整流器外延片旋涂正性光刻胶，型号为RZJ304，光刻胶厚度为0.2μm，将涂有光刻胶的外延片置于热台上预烘45s，随后将涂有光刻胶的外延片放入光刻机中进行曝光，曝光时间为1s，再之后将曝光后的外延片浸泡入正性显影液中，显影液型号为RZX3038，浸泡时间为30s，最后将显影完成的外延片取出，用去离子水冲洗并用热高纯氮气吹干，置于热台上烘烤坚膜，烘烤时间为45s。
(4)将光刻后GaN整流器外延片置入反应离子刻蚀机中对光刻暴露出的肖特基接触电极图案进行反应离子刻蚀，刻蚀出对应图案的凹槽，凹槽深度为200nm。
(5)对GaN整流器外延片进行肖特基接触电极制备：将经反应离子刻蚀后的GaN整流器外延片放入电子束蒸发设备中，将腔体真空度抽至3×10-5Pa，随后依次蒸镀电极金属MoS2/Ni/Au，蒸镀结束后，对GaN整流器外延片进行退火，退火温度800℃，退火时间120min。
(6)将制备好欧姆电极的GaN整流器外延片浸入去胶液中浸泡45min，捞出后用去离子水冲洗并置于丙酮中超声5min，拿出后经去离子水冲洗并用热氮气吹干。
(7)通过掩膜板中的对准标记，对GaN整流器外延片进行对准，重复步骤(3)光刻工艺，在相应位置上光刻显影，制备GaN整流器外延片上暴露出器件肖特基接触电极图案区域。
(8)对光刻后GaN整流器外延片进行欧姆接触电极制备：将制备有器件欧姆接触图案的GaN整流器外延片放入电子束蒸发设备中，将腔体真空度抽至1×10-5Pa，随后依次蒸镀欧姆接触电极物质Ti/Al/Ni/Au，蒸镀结束后，对GaN整流器外延片进行退火，退火温度800℃，退火时间120min。
(9)重复步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN外延片表面残留的光刻胶与蒸镀金属。
(10)使用等离子体增强化学气相沉积方法制备SiNx钝化层：将制备好电极的GaN整流器外延片放入等离子体增强化学气相沉积设备中，仪器升温至800℃，腔体真空度抽至5×10-5Pa，沉积时间60min。
(11)重复步骤(3)工艺，通过光刻显影在GaN外延片表面制备掩膜板，将欧姆接触电极与肖特基接触电极图案上的SiNx(x＝1.33-1.5)暴露出来；
(12)使用湿法刻蚀方法，将暴露出的SiNx钝化层刻蚀掉，取出后用去离子水冲洗，最后重复步骤(6)工艺，通过去胶液浸泡与超声清洗去除外延片表面残留的光刻胶与SiNx(x＝1.33-1.5)；
(13)通过掩膜板对准标记对准，重复步骤(3)工艺，在GaN外延片表面光刻显影制备台面隔离图案；
(14)台面隔离图形刻蚀：重复步骤(4)工艺，使用反应离子刻蚀设备，对步骤(13)得到的GaN整流器外延片表面进行凹槽刻蚀，刻蚀深度为1μm，刻蚀完毕后使用去离子水冲洗外延片表面并用热氮气吹干；
(15)台面隔离钝化层制作：GaN整流器外延片放入等离子体辅助化学气象沉积设备中，重复步骤(10)工艺，在GaN整流器外延片刻蚀凹槽内沉积SiNx钝化层，沉积时间90min；
(16)使用步骤(12)湿法腐蚀工艺去除步骤(15)处理后的GaN整流器外延片表面多余SiNx层后，采用步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN整流器外延片表面残余SiNx与光刻胶。最后制得硅衬底上适用于35GHz交流频率下工作的GaN整流器芯片。
本实施例制得的GaN整流器测试结果与实施例1类似，在此不再赘述。
实施例3
本实施例的硅衬底上适用于35GHz交流频率下工作的GaN整流器芯片的制备方法：
(1)采用金属有机物化学气相沉积技术在硅衬底上生长GaN整流器外延片，包括生长在硅衬底上的N极性面GaN缓冲层，生长在N极性面GaN缓冲层上的碳掺杂半绝缘化N极性面GaN层，其掺杂浓度为5.9×1018cm-3，生长在碳掺杂半绝缘化N极性GaN薄膜上的非掺杂N极性面AlGaN层，生长在非掺杂N极性面AlGaN层上的非掺杂N极性面GaN层，生长在非掺杂N极性面GaN层上的非掺杂N极性面InGaN薄膜；所述GaN缓冲层厚度为850nm；所述碳掺杂GaN层厚度为200nm；所述非掺杂AlGaN层厚度为450nm；所述非掺杂GaN层厚度为650nm；所述非掺杂InGaN层厚度为150nm。
(2)将GaN整流器外延片依次置于丙酮、无水乙醇、去离子水中各自超声3min，去除后经去离子水冲洗，冲洗后的GaN整流器外延片用热高纯氮气吹干。
(3)对清洗后的GaN整流器外延片旋涂正性光刻胶，型号为RZJ304，光刻胶厚度为0.2μm，将涂有光刻胶的外延片置于热台上预烘45s，随后将涂有光刻胶的外延片放入光刻机中进行曝光，曝光时间为4s，再之后将曝光后的外延片浸泡入正性显影液中，显影液型号为RZX3038，浸泡时间为30s，最后将显影完成的外延片取出，用去离子水冲洗并用热高纯氮气吹干，置于热台上烘烤坚膜，烘烤时间为45s。
(4)将光刻后GaN整流器外延片置入反应离子刻蚀机中对光刻暴露出的肖特基接触电极图案进行反应离子刻蚀，刻蚀出对应图案的凹槽，凹槽深度为400nm。
(5)对GaN整流器外延片进行肖特基接触电极制备：将经反应离子刻蚀后的GaN整流器外延片放入电子束蒸发设备中，将腔体真空度抽至5×10-5Pa，随后依次蒸镀电极金属MoS2/Ni/Au，蒸镀结束后，对GaN整流器外延片进行退火，退火温度800℃，退火时间120min。
(6)将制备好欧姆电极的GaN整流器外延片浸入去胶液中浸泡100min，捞出后用去离子水冲洗并置于丙酮中超声15min，拿出后经去离子水冲洗并用热氮气吹干。
(7)通过掩膜板中的对准标记，对GaN整流器外延片进行对准，重复步骤(3)光刻工艺，在相应位置上光刻显影，制备GaN整流器外延片上暴露出器件肖特基接触电极图案区域。
(8)对光刻后GaN整流器外延片进行欧姆接触电极制备：将制备有器件欧姆接触图案的GaN整流器外延片放入电子束蒸发设备中，将腔体真空度抽至1×10-5Pa，随后依次蒸镀欧姆接触电极物质Ti/Al/Ni/Au。
(9)重复步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN外延片表面残留的光刻胶与蒸镀金属。
(10)使用等离子体增强化学气相沉积方法制备SiNx(x＝1.33-1.5)钝化层：将制备好电极的GaN整流器外延片放入等离子体增强化学气相沉积设备中，仪器升温至800℃，腔体真空度抽至5×10-5Pa，沉积时间120min。
(11)重复步骤(3)工艺，通过光刻显影在GaN外延片表面制备掩膜板，将欧姆接触电极与肖特基接触电极图案上的SiNx暴露出来；
(12)使用湿法刻蚀方法，将暴露出的SiNx钝化层刻蚀掉，取出后用去离子水冲洗，最后重复步骤(6)工艺，通过去胶液浸泡与超声清洗去除外延片表面残留的光刻胶与SiNx。
(13)通过掩膜板对准标记对准，重复步骤(3)工艺，在GaN外延片表面光刻显影制备台面隔离图案；
(14)台面隔离图形刻蚀：重复步骤(4)工艺，使用反应离子刻蚀设备，对步骤(13)得到的GaN整流器外延片表面进行凹槽刻蚀，刻蚀深度为2.5μm，刻蚀完毕后使用去离子水冲洗外延片表面并用热氮气吹干；
(15)台面隔离钝化层制作：GaN整流器外延片放入等离子体辅助化学气象沉积设备中，重复步骤(10)工艺，在GaN整流器外延片刻蚀凹槽内沉积SiNx钝化层，沉积时间120min；
(16)使用步骤(12)湿法腐蚀工艺去除步骤(15)处理后的GaN整流器外延片表面多余SiNx层后，采用步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN整流器外延片表面残余SiNx与光刻胶。最后制得硅衬底上适用于35GHz交流频率下工作的GaN整流器芯片。
本实施例制得的GaN整流器测试结果与实施例1类似，在此不再赘述。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受所述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (10)

1.适用于35GHz交流频率下工作的GaN整流器的制备方法，其特征在于，包括以下步骤：
(1)在硅衬底上依次生长N极性面GaN缓冲层、碳掺杂半绝缘化N极性面GaN层、非掺杂N极性面AlGaN层、非掺杂N极性面GaN层和非掺杂N极性面InGaN薄膜，得到整流器外延片；
(2)将步骤(1)所得GaN整流器外延片依次置于丙酮、去离子水、无水乙醇中超声处理，拿出后经去离子水清洗再用热高纯氮气吹干；
(3)对步骤(2)得到的GaN整流器外延片进行肖特基接触电极图案光刻制备：通过旋涂匀胶在步骤(2)所得GaN整流器外延片上均匀涂抹光刻胶，将涂有光刻胶的GaN整流器外延片进行预烘，随后放入光刻机中进行曝光，最后将曝光后的外延片浸入显影液中进行光刻显影并清洗；
(4)对光刻后GaN整流器外延片进行反应离子刻蚀，在GaN整流器外延片中，沿肖特基接触电极图案刻蚀出凹槽，得到欧姆接触电极；
(5)将步骤(4)所得刻有欧姆接触电极对应图案凹槽的GaN整流器外延片放入电子束蒸发设备中，对蒸发腔体抽真空，随后依次蒸镀肖特基接触电极金属，蒸镀结束后，对GaN整流器外延片进行退火；
(6)将GaN整流器外延片浸入去胶液后去除，使用去离子水冲洗并使用丙酮对GaN整流器外延片表面残留的光刻胶与蒸镀金属进行超声处理去除，超声后再经去离子水清洗，再用热高纯氮气吹干；
(7)通过掩膜板中的对准标记，对GaN整流器外延片进行对准，重复步骤(3)工艺，在相应位置上光刻显影，制备器件欧姆接触电极图案并清洗；
(8)对GaN整流器外延片进行欧姆接触电极制备：将步骤(7)所得光刻显影出欧姆接触电极图案的GaN整流器外延片放入电子束蒸发设备中，对蒸发腔抽真空，随后依次蒸镀欧姆接触电极金属，蒸镀结束后，对GaN整流器外延片进行退火；
(9)重复步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN外延片表面残留的光刻胶与蒸镀金属；
(10)使用等离子体增强化学气相沉积方法制备氮化硅钝化层：将步骤(9)所得的GaN整流器外延片放入等离子体增强化学气相沉积设备中，升温并在抽高真空后通入载气与反应气体，在GaN整流器外延片表面沉积SiNx钝化层；其中x＝1.33-1.5；
(11)重复步骤(3)工艺，通过光刻显影在GaN外延片表面制备掩膜板，将欧姆接触电极与肖特基接触电极图案上的SiNx暴露出来；
(12)使用湿法刻蚀方法，将暴露出来的SiNx刻蚀掉，最后重复步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN整流器外延片表面残留的光刻胶与氮化硅钝化层并清洗；
(13)通过掩膜板对准标记对准，重复步骤(3)工艺，在GaN外延片表面光刻显影制备台面隔离图案；
(14)台面隔离：重复步骤(4)工艺，使用反应离子刻蚀设备，对步骤(13)得到的GaN整流器外延片表面进行凹槽刻蚀并清洗；
(15)台面隔离钝化层制作：将步骤(14)所得的GaN整流器外延片放入等离子体辅助化学气象沉积设备中，重复步骤(10)工艺，在GaN整流器外延片刻蚀凹槽内沉积SiNx钝化层；
(16)使用步骤(12)湿法腐蚀工艺去除步骤(15)处理后的GaN整流器外延片表面多余SiNx层后，采用步骤(6)工艺，通过去胶液浸泡与超声清洗去除GaN整流器外延片表面残余SiNx与光刻胶；最后制得硅衬底上适用于35GHz交流频率下工作的GaN整流器芯片。
2.根据权利要求1所述的适用于35GHz交流频率下工作的GaN整流器的制备方法，其特征在于，步骤(1)所述的硅衬底以(111)密排面为外延面；
所述N极性面GaN缓冲层、碳掺杂半绝缘化N极性面GaN层、非掺杂N极性面AlGaN层、非掺杂N极性面GaN层和非掺杂N极性面InGaN薄膜均以为外延方向。
3.根据权利要求1所述的适用于35GHz交流频率下工作的GaN整流器的制备方法，其特征在于，步骤(2)和步骤(6)所述超声处理的时间均为3～15min。
4.根据权利要求1所述的适用于35GHz交流频率下工作的GaN整流器的制备方法，其特征在于，步骤(3)所述光刻胶的厚度在0.2～0.7μm；所述曝光的时间为1～4s；所显影的时间为45～95s。
5.根据权利要求1所述的适用于35GHz交流频率下工作的GaN整流器的制备方法，其特征在于，步骤(4)所述凹槽的深度为150～400nm。
6.根据权利要求1所述的适用于35GHz交流频率下工作的GaN整流器的制备方法，其特征在于，步骤(5)和(8)所述真空的真空度均为1～5×10-5Pa；步骤(5)和(8)所述退火的温度均为450～800℃，所述退火的时间均为30～120min。
7.根据权利要求1所述的适用于35GHz交流频率下工作的GaN整流器的制备方法，其特征在于，步骤(6)所述浸泡时间为45～100min。
8.根据权利要求1所述的适用于35GHz交流频率下工作的GaN整流器的制备方法，其特征在于，步骤(10)和步骤(15)所述SiNx钝化层的沉积时间均为60～120min。
9.根据权利要求1所述的适用于35GHz交流频率下工作的GaN整流器的制备方法，其特征在于，步骤(14)所述凹槽的深度为1～2.5μm。
10.适用于35GHz交流频率下工作的GaN整流器，其特征在于，由权利要求1～9任一项所述适用于35GHz交流频率下工作的GaN整流器的制备方法制备得到。
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