CN108155250A - 一种低成本mwt硅太阳能电池及其制备方法 - Google Patents

一种低成本mwt硅太阳能电池及其制备方法 Download PDF

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Publication number
CN108155250A
CN108155250A CN201711447555.0A CN201711447555A CN108155250A CN 108155250 A CN108155250 A CN 108155250A CN 201711447555 A CN201711447555 A CN 201711447555A CN 108155250 A CN108155250 A CN 108155250A
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CN
China
Prior art keywords
electrode
silicon
silicon chip
solar cells
prepared
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Pending
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CN201711447555.0A
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English (en)
Chinese (zh)
Inventor
李质磊
安欣睿
逯好峰
吴仕梁
路忠林
盛雯婷
张凤鸣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Day Care Pv Polytron Technologies Inc
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Nanjing Day Care Pv Polytron Technologies Inc
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Publication date
Application filed by Nanjing Day Care Pv Polytron Technologies Inc filed Critical Nanjing Day Care Pv Polytron Technologies Inc
Priority to CN201711447555.0A priority Critical patent/CN108155250A/zh
Priority to PCT/CN2018/088320 priority patent/WO2019128072A1/fr
Publication of CN108155250A publication Critical patent/CN108155250A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201711447555.0A 2017-12-27 2017-12-27 一种低成本mwt硅太阳能电池及其制备方法 Pending CN108155250A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201711447555.0A CN108155250A (zh) 2017-12-27 2017-12-27 一种低成本mwt硅太阳能电池及其制备方法
PCT/CN2018/088320 WO2019128072A1 (fr) 2017-12-27 2018-05-25 Cellule solaire à base de silicium mwt à faible coût et son procédé de préparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711447555.0A CN108155250A (zh) 2017-12-27 2017-12-27 一种低成本mwt硅太阳能电池及其制备方法

Publications (1)

Publication Number Publication Date
CN108155250A true CN108155250A (zh) 2018-06-12

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Family Applications (1)

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CN201711447555.0A Pending CN108155250A (zh) 2017-12-27 2017-12-27 一种低成本mwt硅太阳能电池及其制备方法

Country Status (2)

Country Link
CN (1) CN108155250A (fr)
WO (1) WO2019128072A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109585590A (zh) * 2019-01-21 2019-04-05 南通苏民新能源科技有限公司 一种太阳能电池片、组件及制作方法
CN109599447A (zh) * 2019-01-21 2019-04-09 南通苏民新能源科技有限公司 一种新型太阳能电池片、组件及制作方法
CN112186046A (zh) * 2019-07-01 2021-01-05 泰州隆基乐叶光伏科技有限公司 一种太阳能电池及制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111211179B (zh) * 2019-10-30 2023-05-19 横店集团东磁股份有限公司 一种mwt太阳电池背电场结构及其制造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102522459A (zh) * 2011-12-29 2012-06-27 彩虹集团公司 一种晶硅太阳能电池的刻槽埋栅方法
CN103337553A (zh) * 2013-06-04 2013-10-02 南京日托光伏科技有限公司 一种薄膜覆盖正面电极的硅太阳能电池及其制造工艺
CN103413838A (zh) * 2013-07-23 2013-11-27 新奥光伏能源有限公司 一种晶体硅太阳电池及其制备方法
CN103413858A (zh) * 2013-06-08 2013-11-27 中山大学 一种mwt晶体硅太阳能电池的制备方法
CN103560175A (zh) * 2013-11-13 2014-02-05 山东力诺太阳能电力股份有限公司 一种太阳电池正面导体电极制备方法
CN203674218U (zh) * 2013-11-27 2014-06-25 奥特斯维能源（太仓）有限公司 Mwt与背钝化结合的晶硅太阳能电池
US20150280022A1 (en) * 2014-03-28 2015-10-01 International Business Machines Corporation Surface preparation and uniform plating on through wafer vias and interconnects for photovoltaics
CN205140994U (zh) * 2015-11-11 2016-04-06 厦门乾照光电股份有限公司 一种倒置结构太阳能电池

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102522459A (zh) * 2011-12-29 2012-06-27 彩虹集团公司 一种晶硅太阳能电池的刻槽埋栅方法
CN103337553A (zh) * 2013-06-04 2013-10-02 南京日托光伏科技有限公司 一种薄膜覆盖正面电极的硅太阳能电池及其制造工艺
CN103413858A (zh) * 2013-06-08 2013-11-27 中山大学 一种mwt晶体硅太阳能电池的制备方法
CN103413838A (zh) * 2013-07-23 2013-11-27 新奥光伏能源有限公司 一种晶体硅太阳电池及其制备方法
CN103560175A (zh) * 2013-11-13 2014-02-05 山东力诺太阳能电力股份有限公司 一种太阳电池正面导体电极制备方法
CN203674218U (zh) * 2013-11-27 2014-06-25 奥特斯维能源（太仓）有限公司 Mwt与背钝化结合的晶硅太阳能电池
US20150280022A1 (en) * 2014-03-28 2015-10-01 International Business Machines Corporation Surface preparation and uniform plating on through wafer vias and interconnects for photovoltaics
CN205140994U (zh) * 2015-11-11 2016-04-06 厦门乾照光电股份有限公司 一种倒置结构太阳能电池

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109585590A (zh) * 2019-01-21 2019-04-05 南通苏民新能源科技有限公司 一种太阳能电池片、组件及制作方法
CN109599447A (zh) * 2019-01-21 2019-04-09 南通苏民新能源科技有限公司 一种新型太阳能电池片、组件及制作方法
CN112186046A (zh) * 2019-07-01 2021-01-05 泰州隆基乐叶光伏科技有限公司 一种太阳能电池及制备方法
CN112186046B (zh) * 2019-07-01 2022-05-17 泰州隆基乐叶光伏科技有限公司 一种太阳能电池及制备方法

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Address after: 214028 Xishi Road, Xinwu District, Wuxi City, Jiangsu Province

Applicant after: Jiangsu Rituo Photovoltaic Technology Co., Ltd.

Address before: 211800 No. 29 Buyue Road, Pukou Economic Development Zone, Nanjing City, Jiangsu Province

Applicant before: Nanjing day care PV Polytron Technologies Inc

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20180612