CN105118891A - 一种抗氧化正面电极太阳能电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种抗氧化正面电极太阳能电池的制备方法，包括如下步骤：a)对硅片依次进行制绒、热扩散制p-n结和去磷硅玻璃；b)在硅片正面的N+层表面丝网印刷若干条副栅线并烧结；c)用PECVD设备在硅片正面沉积SiNx减反膜，SiNx减反膜覆盖硅片正面100％的面积，将若干条副栅线和N+层表面完全覆盖；d)在硅片背面的P型硅表面丝网印刷Al背场和Ag背电极；e)在SiNx减反膜表面丝网印刷若干条主栅线；f)对硅片进行高温烧结。本发明具有副栅线隔绝外界的氧气，有效保护正面电极，同时提高了SiNx减反膜的有效面积，提高表面钝化效果的优点。本发明还提供一种低反射率晶体硅太阳能电池。
Description
技术领域
本发明涉及太阳能电池技术领域，尤其涉及一种抗氧化正面电极太阳能电池及其制备方法。
背景技术
晶硅太阳能电池占据太阳能电池90％以上的市场份额，其在光伏产业中具有举足轻重的地位。在晶硅太阳能电池的生产过程中，金属电极的制备对电池的转换效率和制造成本的影响特别大，是晶硅太阳能电池制备中最关键的工序。如图1所示的现有技术的太阳能电池的结构示意图，太阳能电池结构从下往上依次为Ag背电极1′、Al背电场2′、P型硅3′、N+层4′、SiNx减反膜5′和Ag正电极6′；Ag正电极6′分为主栅线和副栅线，且垂直交叉，其都会烧穿SiNx减反膜和N+层实现欧姆接触，Ag正电极6′的主栅线和副栅线全部裸露在空气中，极容易被氧化，导致电池转换效率和组件的实际发电量下降。不仅影响电池片的外观，对电池的转换效率，组件的可靠性都有不利的影响。
太阳能电池的正面电极为Ag金属，采用主栅线和副栅线垂直分布的形式。Ag栅线在空气容易氧化，电池片的制备、电池片运输、电池片储存、组件的封装及组件在户外发电过程中，Ag栅线都不可避免的和氧气接触，Ag的氧化会不断加剧，会直接导致太阳能电池组件的发电量下降。因此，如何开发一种太阳能电池，能够避免正面电极的氧化，且能提升电池的转换效率，成为研究者重点关注的领域。
发明内容
本发明所要解决的技术问题在于，提供一种够避免正面电极的氧化的抗氧化正面电极太阳能电池及其制备方法。
为了解决上述技术问题，本发明提供了一种抗氧化正面电极太阳能电池的制备方法，包括如下步骤：
a)对硅片依次进行制绒、热扩散制p-n结和去磷硅玻璃；
b)在硅片正面的N+层表面丝网印刷若干条副栅线并烧结；
c)用PECVD设备在硅片正面沉积SiNx减反膜，SiNx减反膜覆盖硅片正面100％的面积，将若干条副栅线和N+层表面完全覆盖；
d)在硅片背面的P型硅表面丝网印刷Al背场和Ag背电极；
e)在SiNx减反膜表面丝网印刷若干条主栅线；
f)对硅片进行高温烧结。
与现有技术相比，本发明具有如下有益效果：由于先制备副栅线，然后用SiNx减反膜覆盖硅片正面100％的面积，将若干条副栅线和N+层表面完全覆盖，对副栅线进行保护，具有副栅线隔绝外界的氧气，有效保护正面电极，同时提高了SiNx减反膜的有效面积，提高表面钝化效果的优点。
所述副栅线材质为Ag。
所述副栅线中Ag质量分数为96-100％。
由于副栅线中Ag质量分数为96-100％，其Ag质量分数高，不含有破坏N+层的成分,具有在高温烧结过程中不会破坏所述N+层的优点。
所述主栅线材质为Ag。
所述主栅线中Ag质量分数为90-95％，高温烧结后所述主栅线会烧穿所述SiNx减反膜与所述硅片正面的N+层形成欧姆接触。
由于主栅线中Ag质量分数为90-95％，其Ag质量分数高，不含有破坏N+层的成分,具有在高温烧结过程中不会破坏所述N+层的优点。
在步骤c)中，在硅片正面沉积SiNx减反膜前有预放电过程，该过程如下：往PECVD设备充入NH3/N2，流量分别为3-10L/Min和1-5L/Min，开启射频电源，射频电源功率3500-5000W，预放电时间120-300s。
所述主栅线数量为3条，副栅线97条。
所述主栅线数量为4条，副栅线103条。
相应地，本发明还提供一种低反射率晶体硅太阳能电池,其由上述的制备方法制得，抗氧化正面电极太阳能电池包括从下往上依次连接的Ag背电极、Al背电场、P型硅、N+层、SiNx减反膜和Ag正电极，Ag正电极包括若干条主栅线和若干条副栅线，SiNx减反膜覆盖硅片正面100％的面积，将若干条副栅线和N+层表面完全覆盖。
附图说明
图1是现有技术的太阳能电池的结构示意图；
图2是本发明的一种抗氧化正面电极太阳能电池的制备方法流程图；
图3是本发明的一种抗氧化正面电极太阳能电池的结构示意图；
图4是图3沿A-A向结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述。
如图2所示，本发明的一种抗氧化正面电极太阳能电池的制备方法，包括如下步骤：
步骤11：对硅片依次进行制绒、热扩散制p-n结和去磷硅玻璃；
步骤12：在硅片正面的N+层表面丝网印刷多条副栅线并烧结；
步骤13：用PECVD设备在硅片正面沉积SiNx减反膜，SiNx减反膜覆盖硅片正面100％的面积，将若干条副栅线和N+层表面完全覆盖；
步骤14：在硅片背面的P型硅表面丝网印刷Al背场和Ag背电极；
步骤15：在SiNx减反膜表面丝网印刷多条主栅线；
步骤16：对硅片进行高温烧结。
与现有技术相比，本发明具有如下有益效果：由于先制备副栅线，然后用SiNx减反膜覆盖硅片正面100％的面积，将若干条副栅线和N+层表面完全覆盖，对副栅线进行保护，具有副栅线隔绝外界的氧气，有效保护正面电极，同时提高了SiNx减反膜的有效面积，提高表面钝化效果的优点。
在步骤c)中，在硅片正面沉积SiNx减反膜前有预放电过程，该过程如下：往PECVD设备中充入NH3/N2，NH3流量为3-10L/Min和N2流量为1-5L/Min，开启射频电源，射频电源功率3500-5000W，预放电时间120-300s。
副栅线材质为Ag，所述副栅线中Ag质量分数为96-100％，具体的副栅线中Ag质量分数为96％、97％、98％、99％、100％，但不限于此。Ag质量分数高，不含有破坏N+层的成分,具有在高温烧结过程中不会破坏所述N+层的优点。而现有技术的Ag正电极的副栅线通过穿透SiNx减反膜和N+层接触，副栅线和N+层的接触电阻偏大；本实施例的副栅线是和N+层直接接触，可以大大降低接触电阻，提高电池转换效率。
主栅线材质为Ag,所述主栅线中Ag质量分数为90-95％，高温烧结后所述主栅线会烧穿所述SiNx减反膜与所述N+层结形成欧姆接触，具体的主栅线中Ag质量分数为90％、91％、92％、93％、94％、95％，但不限于此。Ag质量分数高，不含有破坏N+层的成分,具有在高温烧结过程中不会破坏所述N+层的优点。
不同的主栅线和副栅线数量搭配得到的电池的外观和电学性能不同，可设置主栅线数量为3条，副栅线97条；也可设置主栅线数量为4条，副栅线数量为103条，电池转换效率相对主栅线数量为3条，副栅线数量为97条时有0.2-0.3％的提升。
本发明的一种抗氧化正面电极太阳能电池，是由上述的制备方法制得。如图3、图4所示，抗氧化正面电极太阳能电池包括从下往上依次连接的Ag背电极1、Al背电场2、P型硅3、N+层4、SiNx减反膜5和Ag正电极6，Ag正电极6包括多条主栅线61和多条副栅线62，SiNx减反膜5覆盖硅片正面100％的面积，将多条副栅线62和N+层4表面完全覆盖，SiNx减反膜5对多条副栅线62进行保护，具有副栅线62隔绝外界的氧气，有效保护正面电极，同时提高了SiNx减反膜5的有效面积，提高表面钝化效果的优点。主栅线61暴露在外，是为了太阳能电池组件的焊接。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。
Claims (9)
1.一种抗氧化正面电极太阳能电池的制备方法，其特征在于，包括如下步骤：
a)对硅片依次进行制绒、热扩散制p-n结和去磷硅玻璃；
b)在硅片正面的N+层表面丝网印刷若干条副栅线并烧结；
c)用PECVD设备在硅片正面沉积SiNx减反膜，SiNx减反膜覆盖硅片正面100％的面积，将若干条副栅线和N+层表面完全覆盖；
d)在硅片背面的P型硅表面丝网印刷Al背场和Ag背电极；
e)在SiNx减反膜表面丝网印刷若干条主栅线；
f)对硅片进行高温烧结。
2.如权利要求1所述的一种抗氧化正面电极太阳能电池的制备方法，其特征在于，所述副栅线材质为Ag。
3.如权利要求2所述的一种抗氧化正面电极太阳能电池的制备方法，其特征在于，所述副栅线中Ag质量分数为96-100％。
4.如权利要求1所述的一种抗氧化正面电极太阳能电池的制备方法，其特征在于，所述主栅线材质为Ag。
5.如权利要求4所述的一种抗氧化正面电极太阳能电池的制备方法，其特征在于，所述主栅线中Ag质量分数为90-95％，高温烧结后所述主栅线会烧穿所述SiNx减反膜与所述硅片正面的N+层形成欧姆接触。
6.如权利要求1所述的一种抗氧化正面电极太阳能电池的制备方法，其特征在于，在步骤c)中，在硅片正面的N+层表面沉积SiNx减反膜前有预放电过程，该过程如下：往PECVD设备充入NH3/N2，流量分别为3-10L/Min和1-5L/Min，开启射频电源，射频电源功率3500-5000W，预放电时间120-300s。
7.如权利要求1所述的一种抗氧化正面电极太阳能电池的制备方法，其特征在于，所述主栅线数量为3条，副栅线97条。
8.如权利要求1所述的一种抗氧化正面电极太阳能电池的制备方法，其特征在于，所述主栅线数量为4条，副栅线103条。
9.一种抗氧化正面电极太阳能电池，其特征在于，其由权利要求1-8任一项所述的制备方法制得，抗氧化正面电极太阳能电池包括从下往上依次连接的Ag背电极、Al背电场、P型硅、N+层、SiNx减反膜和Ag正电极，Ag正电极包括若干条主栅线和若干条副栅线，SiNx减反膜覆盖硅片正面100％的面积，将若干条副栅线和N+层表面完全覆盖。
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