CN104091842B - 分布式局域硼掺杂的双面感光晶体硅太阳电池及其制备方法 - Google Patents
分布式局域硼掺杂的双面感光晶体硅太阳电池及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种分布式局域硼掺杂的双面感光晶体硅太阳电池及其制备方法，该电池包括硅衬底，在硅衬底正面设有N型掺杂区、N型掺杂区上设有正面减反钝化膜，硅衬底背面设有背面钝化膜，制备方法还包括以下步骤：在背面钝化膜上以分布式短线的图案将背面钝化膜局部去除，露出硅衬底，形成多个去除通道；然后局域印刷硼硅浆料以覆盖去除通道；随后分别印刷背面电极层和正面电极层，并烘干；然后进行高温烧结，去除通道内的硼硅浆料与硅衬底接触界面形成分布式的P型硼重掺杂区域，组成P型硼重掺杂层；并在高温烧结过程中，同时形成正面电极层和背面电极层。本发明不仅降低了太阳能电池背面的少子在接触界面的复合速率，有利于电池开路电压和转换效率的提升，而且降低了开膜面积，进一步降低了表面的复合速率。
Description
技术领域
本发明涉及一种分布式局域硼掺杂的双面感光晶体硅太阳电池及其制备方法，属于太阳能电池制备技术领域。
背景技术
目前，晶体硅太阳电池局域铝背场是目前光伏行业的研究热点，被普遍认为是提高晶体硅电池转换效率的可大规模生产的技术。目前，常规的工艺是用AlOx/SiNx:H或者SiO2/SiNx:H叠层膜钝化背表面，以平行线的图案用激光或者化学腐蚀将背面膜打开，然后整面印刷铝浆。在高温过程中接触界面的铝与硅形成液态合金相，液态合金相在冷却过程中凝固，一部分硅原子在重结晶过程中被铝原子取代了在晶格中的位置，形成铝掺杂的局域背面场。
这种局域铝背场电池的局限在于：1、背面采用铝掺杂形成局部背场，掺杂浓度仅在1×1018cm-3量级，且掺杂深度较浅，无法防止少数载流子穿越局部背场到达金属接触的复合；2、背面掺杂占总体面积较大，减少了钝化膜的面积，导致额外的表面复合。
发明内容
本发明所要解决的技术问题是克服现有技术的缺陷，提供一种分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法，它不仅降低了太阳能电池背面的少子在接触界面的复合速率，有利于电池开路电压和转换效率的提升，而且降低了开膜面积，进一步降低了表面的复合速率。
为了解决上述技术问题，本发明的技术方案是：一种分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法，该电池包括硅衬底，在硅衬底正面设有N型掺杂区，N型掺杂区上设有正面减反钝化膜，硅衬底背面设有背面钝化膜，还包括以下步骤：
1)在背面钝化膜上以分布式短线的图案将背面钝化膜局部去除，露出硅衬底，形成多个去除通道；
2)然后局域印刷硼硅浆料以覆盖去除通道；
3)随后分别印刷背面电极层和正面电极层，并烘干；
4)然后进行高温烧结，去除通道内的硼硅浆料与硅衬底接触界面形成分布式的P型硼重掺杂区域；并在高温烧结过程中，同时形成正面电极层和背面电极层，正面减反钝化膜上未被正面电极层覆盖的区域形成正面感光区域，背面钝化膜上未被背面电极层覆盖的区域形成背面感光区域。
进一步提供了一种短线图形结构的具体尺寸，所述的去除通道的短线图形结构为：线宽为1～500μm，线长为0.1mm～100mm，在其宽度方向上，相邻的去除通道的线间距为0.1mm～10mm。
进一步为了使双面均能接收光线，从而增加背面收集光辐照的能力，提高本电池实际发电性能，所述的正面电极层包括呈交叉状态的正面主栅和正面细栅；所述的背面电极包括呈交叉状态的背面主栅和背面细栅，并且背面细栅与P型硼重掺杂层电性连接。
进一步提供了一种正面和背面感光区域的具体面积比例以满足收集光辐照的性能，所述的正面感光区域面积占正面总区域的90％～98％，所述的背面感光区域占背面总区域的30％～95％。
进一步，所述的P型硼重掺杂层的掺杂浓度为1×1017～2×1020cm-3，掺杂深度为0.1～15μm。
进一步，所述的背面电极层由银、铝、镍、锡中的一种或几种制成。
进一步，所述的正面电极层由银、铝、铜、镍、锡中的一种或几种制成。
本发明还提供了一种分布式局域硼掺杂的双面感光晶体硅太阳电池，该电池包括
一硅衬底，其具有一正面和一背面；
一N型掺杂区，其设在硅衬底的正面上；
一正面减反钝化膜，其设在N型掺杂区的上表面上；
一背面钝化膜，其设在硅衬底的背面上，并且其上开有多个去除通道，并且多个去除通道呈分布式短线阵列结构；
一正面电极层，其设在正面减反钝化膜上，并且与N型掺杂区接触，正面减反钝化膜上未被正面电极层覆盖的区域形成正面感光区域；
一背面电极层，其设在背面钝化膜上，并且背面钝化膜上未被背面电极层覆盖的区域形成背面感光区域；
一P型硼重掺杂层，其具有多个和去除通道对应的P型硼重掺杂区域，P型硼重掺杂区域呈分布式地设置，并且该P型硼重掺杂区域的上侧与硅衬底接触，下侧通过去除通道与背面电极层电性接触。
采用了上述技术方案后，本发明具有以下的有益效果：
(1)采用硼掺杂代替铝掺杂，极大地提高了掺杂浓度和掺杂深度，降低了少子在接触界面的复合，有利于电池开路电压和效率的提升。
(2)采用分布式短线的开膜代替常规的平行线图形，降低了开膜面积，降低了表面的复合速率。
(3)硼掺杂通过印刷硼硅浆料，在一次高温烧结中完成掺杂和电极制备，不需要长时间的硼扩散，工艺简单，便于产业化。
(4)正面和背面都采用主栅和细栅设计，双面都能接收光线，相对于常规背钝化电池增加了背面收集光辐照的能力，提高了电池的实际发电性能。
附图说明
图1为本发明的分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法的流程图一；
图2为本发明的分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法的流程图二；
图3为图2中的A部取样结构示意图；
图4为本发明的分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法的流程图四。
具体实施方式
为了使本发明的内容更容易被清楚地理解，下面根据具体实施例并结合附图，对本发明作进一步详细的说明。
实施例一
本实施例提供的一种分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法，如图1所示，在P型的硅衬底3上，完成包括p-n结N区，即N型掺杂区2的制备，正面减反钝化膜1的沉积，以及背面钝化膜4的沉积之后，采用激光对背面钝化膜4局部去除，图形为分布线图案，如图2所示。短线的长度为2cm，宽度为60μm，沿短线方向的线与线中心之间的间距为2.2cm，在垂直短线方向，线与线中心之间的间距为700μm，激光去除之后露出硅衬底3，采用丝网印刷的方法在硅衬底3上印刷一层厚度为50μm，宽度为400μm的硼硅浆料，硼硅浆料覆盖去除通道，同时在正面和背面丝网印刷银浆和铝浆，经过800摄氏度高温烧结，烧结之后形成P型硼重掺杂区域6，背面电极层8和正面电极层7，其中背面电极8与P型硼重掺杂区域6连接，如图2所示，其背面俯视图如图4所示，在背面电极层8下面是P型硼重掺杂区域6，背面未被背面电极层8覆盖的区域也能接收光线，产生光生电流，提高器件收集辐照的能力。所述的硼硅浆料的主要成分包括硼和硅。
正面电极层7包括呈交叉状态的正面主栅和正面细栅；所述的背面电极层8包括呈交叉状态的背面主栅和背面细栅，并且背面细栅与P型硼重掺杂层电性连接。
背面电极层8由银、铝、镍、锡中的一种或几种制成，但不限于此。描述的几种制成指的是形成合金的方式。
正面电极层7由银、铝、铜、镍、锡中的一种或几种制成，但不限于此。
实施例二
本实施例提供的一种分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法，如图1所示，在P型的硅片衬底3上，完成包括p-n结N区，即N型掺杂区2的制备，正面减反钝化膜1的沉积，以及背面钝化膜4的沉积之后，采用刻蚀浆料对背面钝化膜4局部去除，图形为分布线图案，如图2所示。短线的长度为0.5cm，宽度为55μm，沿短线方向的线与线中心之间的间距为1.2cm，在垂直短线方向，线与线中心之间的间距为600μm，激光去除之后露出硅衬底3上，采用丝网印刷的方法在硅衬底3上印刷一层厚度为30μm，宽度为200μm的硼硅浆料，浆料覆盖去除通道，同时在正面和背面丝网印刷银浆和铝浆，经过800摄氏度高温烧结，烧结之后形成P型硼重掺杂区域6，背面电极层8和正面电极层7，其中背面电极层8与P型硼重掺杂区域6连接，如图2所示。其背面俯视图如图4所示，在背面电极层8下面是P型硼重掺杂区域6，背面未被背面电极层8覆盖的区域也能接收光线，产生光生电流，提高器件收集辐照的能力。所述的硼硅浆料的主要成分包括硼和硅。
正面电极层7包括呈交叉状态的正面主栅和正面细栅；所述的背面电极层8包括呈交叉状态的背面主栅和背面细栅，并且背面细栅与P型硼重掺杂层电性连接。
背面电极层8由银、铝、镍、锡中的一种或几种制成，但不限于此。描述的几种制成指的是形成合金的方式。
正面电极层7由银、铝、铜、镍、锡中的一种或几种制成，但不限于此。
本发明的优点如下：
(1)采用硼掺杂代替铝掺杂，极大地提高了掺杂浓度和掺杂深度，降低了少子在接触界面的复合，有利于电池开路电压和效率的提升。
(2)采用分布式的开膜代替常规的平行线图形，降低了开膜面积，降低了表面的复合速率。
(3)硼掺杂通过印刷硼硅浆料，在一次高温烧结中完成掺杂和电极制备，不需要长时间的硼扩散，工艺简单，便于产业化。
(4)正面和背面都采用主栅和细栅设计，双面都能接收光线，相对于常规背钝化电池增加了背面收集光辐照的能力，提高了电池的实际发电性能。
以上所述的具体实施例，对本发明解决的技术问题、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (6)
1.一种分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法，该电池包括硅衬底(3)，在硅衬底(3)正面设有N型掺杂区(2)，N型掺杂区(2)上设有正面减反钝化膜(1)，硅衬底(3)背面设有背面钝化膜(4)，其特征在于，还包括以下步骤：
1)在背面钝化膜(4)上以分布式短线的图案将背面钝化膜(4)局部去除，露出硅衬底(3)，形成多个去除通道；所述的去除通道的短线图形结构为：线宽为55～60μm，线长为0.1mm～100mm，在其宽度方向上，相邻的去除通道的线间距为100μm～700μm；
2)然后局域印刷硼硅浆料以覆盖去除通道；
3)随后分别印刷背面电极层(8)和正面电极层(7)，并烘干；
4)然后进行高温烧结，去除通道内的硼硅浆料与硅衬底接触界面形成分布式的P型硼重掺杂区域(6)；并在高温烧结过程中，同时形成正面电极层(7)和背面电极层(8)，正面减反钝化膜(1)上未被正面电极层(7)覆盖的区域形成正面感光区域，背面钝化膜(4)上未被背面电极层(8)覆盖的区域形成背面感光区域；
所述的正面感光区域面积占正面总区域的90％～98％，所述的背面感光区域占背面总区域的30％～95％；
所述的P型硼重掺杂层的掺杂浓度为1×1017～2×1020cm-3，掺杂深度为0.1～15μm。
2.根据权利要求1所述的分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法，其特征在于：所述的正面电极层(7)包括呈交叉状态的正面主栅和正面细栅；所述的背面电极(8)包括呈交叉状态的背面主栅和背面细栅，并且背面细栅与P型硼重掺杂层电性连接。
3.根据权利要求1或2所述的分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法，其特征在于：所述的背面电极层(8)由银、铝、镍、锡中的一种或几种制成。
4.根据权利要求1或2所述的分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法，其特征在于：所述的正面电极层(7)由银、铝、铜、镍、锡中的一种或几种制成。
5.根据权利要求1所述的分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法，其特征在于：所述的步骤2)中，采用激光销蚀法或浆料刻蚀法在背面钝化膜(4)上局部去除，露出硅衬底(3)，形成多个去除通道。
6.一种如权利要求1至5中任一项所述的分布式局域硼掺杂的双面感光晶体硅太阳电池的制备方法中制备的分布式局域硼掺杂的双面感光晶体硅太阳电池，包括
一硅衬底(3)，其具有一正面和一背面；
一N型掺杂区(2)，其设在硅衬底(3)的正面上；
一正面减反钝化膜(1)，其设在N型掺杂区(2)的上表面上；
一背面钝化膜(4)，其设在硅衬底(3)的背面上；
其特征在于：
所述的背面钝化膜(4)上开有多个去除通道，并且多个去除通道呈分布式短线阵列结构；所述的去除通道的短线图形结构为：线宽为55～60μm，线长为0.1mm～100mm，在其宽度方向上，相邻的去除通道的线间距为100μm～700μm；
它还包括：
一正面电极层(7)，其设在正面减反钝化膜(1)上，并且与N型掺杂区(2)接触，正面减反钝化膜(1)上未被正面电极层(7)覆盖的区域形成正面感光区域；
一背面电极层(8)，其设在背面钝化膜(4)上，并且背面钝化膜(4)上未被背面电极层(8)覆盖的区域形成背面感光区域；
一P型硼重掺杂层，其具有多个和去除通道对应的P型硼重掺杂区域(6)，P型硼重掺杂区域(6)呈分布式地设置，并且该P型硼重掺杂区域(6)的上侧与硅衬底(3)接触，下侧通过去除通道与背面电极层(8)电性接触；
所述的正面感光区域面积占正面总区域的90％～98％，所述的背面感光区域占背面总区域的30％～95％；
所述的P型硼重掺杂层的掺杂浓度为1×1017～2×1020cm-3，掺杂深度为0.1～15μm。
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