CN104157717B - 一种全背电极n型晶硅异质结太阳电池的制备方法 - Google Patents
一种全背电极n型晶硅异质结太阳电池的制备方法 Download PDFInfo
- Publication number
- CN104157717B CN104157717B CN201410424158.1A CN201410424158A CN104157717B CN 104157717 B CN104157717 B CN 104157717B CN 201410424158 A CN201410424158 A CN 201410424158A CN 104157717 B CN104157717 B CN 104157717B
- Authority
- CN
- China
- Prior art keywords
- type
- layer
- silicon
- substrate
- crystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 159
- 239000000758 substrate Substances 0.000 claims abstract description 61
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 57
- 239000011574 phosphorus Substances 0.000 claims abstract description 57
- 238000009792 diffusion process Methods 0.000 claims abstract description 56
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 230000007797 corrosion Effects 0.000 claims abstract description 5
- 238000005260 corrosion Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 132
- 229910052710 silicon Inorganic materials 0.000 claims description 132
- 239000010703 silicon Substances 0.000 claims description 132
- 239000013078 crystal Substances 0.000 claims description 50
- 239000010409 thin film Substances 0.000 claims description 35
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 18
- 239000002002 slurry Substances 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 6
- 230000003197 catalytic effect Effects 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 230000001413 cellular effect Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000009766 low-temperature sintering Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 2
- 229910004205 SiNX Inorganic materials 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
- 238000001035 drying Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000628997 Flos Species 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
本发明公开了一种全背电极N型晶硅异质结太阳电池的制备方法,该方法包括:在N型硅基底前表面制备纳米绒面、N+型磷浅扩散晶硅层和SiOx钝化/SiNx减反层;在N型硅基底背面制备N++型磷重扩散晶硅层,然后采用印刷腐蚀浆料实现对N++型磷重扩散晶硅层局部腐蚀,再依次沉积一层本征非晶硅薄膜层和一层p型非晶硅薄膜层,去除N++型磷重扩散晶硅层区域表层的本征和p型非晶硅;然后溅射一层透明导电薄膜层,用激光将N型硅基底背面的P区和N区分开;最后印刷电极,低温烧结。该方法将金属电极全部移至电池背面,受光面没有电极,降低了组件生产成本、电池的复合损失,从而光学损失和电阻均显著减少,效率大幅提升。
Description
技术领域
本发明涉及一种太阳能电池结构的制备方法,具体涉及一种全背电极N型晶硅异质结太阳电池的制备方法。
背景技术
随着晶硅太阳能电池技术不断发展,高效单晶硅太阳能电池研究已取得巨大成就。美国Sunpower公司开发的基于N型硅基底全背电极(IBC)电池结构,将其栅状电极全部设计到电池背面,正负极交叉排列,量产效率可达23%,实验室最高效率达到24.2%。2014年4月,松下公司宣布通过将异质结技术(HIT)和背面接触电极技术(IBC)相结合,其最新研发的商用尺寸(143.7cm2)单晶硅电池光电转换效率已达到25.6%,去年2月,松下采用101.8cm2硅片的HIT电池已经达到的24.7%的转换效率。松下公司此次的突破将效率提高了0.9个百分点,也打破了澳洲新南威尔士大学25%的晶硅电池效率世界记录。然而,Sunpower的IBC全背电极电池结构的制备工艺步骤已经非常繁多,松下公司提出的HIT和IBC结合电池,成本高势必也将成为大规模量产推广的瓶颈。此外,这类电池前表面绒面仍采用常规结构,因此前表面对光的吸收方面有很大提升空间。
此外,由于HIT和IBC技术结合的电池需要厚度比常规电池厚度更薄,这势必会降低硅片对光的吸收效果。然而,这类技术(如公开号为CN102214719A和CN102185030A等)都没有对硅片表面织构做特殊处理,会降低短路电流,所以需要增强硅片表面的陷光能力。在公开号为CN102214719A和CN102185030A的中国专利中采用PECVD法在硅片前表面沉积掺杂非晶硅薄膜,虽然也能达到提升开压的效果,但与传统扩散制备的晶硅扩散层无疑增加了生产成本。最致命的问题是,CN102214719A专利中“P型区域形成n+a-si/i-a-si/N-c-si/N+c-si/i-a-si/p-a-si异质结结构”中“背面N+c-si扩散晶硅层”的存在导致了势垒增加,大大降低了开路电压,因此需要去除P型区域该N+扩散层;而CN102185030A专利中N型区域的“前表面n+非晶硅薄膜/N型硅基底/N区电极”同样使得电子很难越过势垒到达N区电极。
基于上述现有的技术的不足,需要开发一种简单廉价的太阳电池结构,进一步增强陷光能力,提高短路电流;优化电池结构和工艺,增加开路电压。
发明内容
本发明所要解决的技术问题是:提出一种新的HIT与IBC制备电池技术相结合的工艺,并采用黑硅技术将N型硅基底前表面制备成纳米绒面结构,设计出全新的电池结构,该方法所制备的太阳能电池结构不仅提高电池对光的吸收能力、转换效率,提高短路电流,而且简化工艺步骤、降低生产成本。
本发明的技术方案是:
一种全背电极N型晶硅异质结太阳电池的制备方法,包括以下具体步骤:
(1)采用金属催化化学刻蚀法或等离子体刻蚀法在N型硅基底前表面制备纳米绒面,所述纳米绒面为类金字塔状或蜂窝状;
(2)通过磷源高温扩散或离子注入法,在N型硅基底背面重扩磷制备N++型磷重扩散晶硅层;
(3)通过磷源高温扩散或离子注入法,在N型硅基底前表面浅扩磷制备N+型磷浅扩散晶硅层;
(4)在N型硅基底前表面的纳米绒面上依次沉积SiOx薄膜和SiNx薄膜作为钝化层和减反层,得SiOx钝化/SiNx减反层;
(5)将N型硅基底背面的N++型磷重扩散晶硅层采用丝网印刷腐蚀性浆料腐蚀,将N++型磷重扩散晶硅层局部去除,部分露出N型硅基底;
(6)再采用PECVD沉积法,在步骤(5)的基础上,依次沉积一层本征非晶硅薄膜层和一层p型非晶硅薄膜层;
(7)在N型硅基底背面的N++型磷重扩散晶硅层区域上方印刷腐蚀性浆料,去除其表面生长的本征非晶硅薄膜层和p型非晶硅薄膜层,露出N++型磷重扩散晶硅层;
(8)在步骤(7)的基础上,在N型硅基底背面溅射一层透明导电薄膜层;
(9)用激光将N型硅基底背面刻蚀开膜,开膜宽度为1μm~50μm,将N型硅基底背面分为P区和N区;
(10)最后在N型硅基底背面丝网印刷背电极,在100℃~300℃的温度下烧结,烧结时间为10s~600s,得全背电极N型晶硅异质结太阳电池。
所述全背电极N型晶硅异质结太阳电池包括N型硅基底,在所述N型硅基底的前表面上由里至外依次有纳米绒面、N+型磷浅扩散晶硅层以及SiOx钝化/SiNx减反层;所述N型硅基底的背面分为P区、N区和位于P区、N区之间的开膜区;所述P区从上到下包括本征非晶硅薄膜层、p型非晶硅薄膜层、透明导电薄膜层和背电极,且所述本征非晶硅薄膜层与N型硅基底的背表面连接;所述N区从上到下包括N++型磷重扩散晶硅层、透明导电薄膜层以及背电极,且所述N++型磷重扩散晶硅层与所述N型硅基底的背表面连接。
优选方案:步骤(1)所述N型硅基底为N型单晶硅或多晶硅,厚度为50μm~300μm。
优选方案:步骤(1)所述纳米绒面的厚度为50nm~900nm。所述的硅片前表面纳米绒面结构具有极低的反射率,具有提高对光的吸收,增加太阳电池电流的作用。
优选方案:步骤(2)所述N++型磷重扩散晶硅层的厚度为0.1μm~0.5μm,方块电阻为20~150ohm/Sq。
优选方案:步骤(3)所述N+型扩散晶硅层的厚度为0.1μm~0.5μm,方块电阻为50~200ohm/Sq。
优选方案:步骤(4)所述SiOx钝化/SiNx减反层的总厚度为25nm~150nm,所述的SiOx薄膜作为钝化层是通过热氧化法制备获得,SiNx薄膜作为减反层是通过PECVD法制备获得,其中SiOx厚度为5nm~50nm,SiNx为20nm~100nm,SiNx折射率为1.9~2.3。它具有很好的钝化作用,减少前表面载流子复合,并且具有很好的减反作用,降低前表面光的反射,增加光的吸收。
优选方案:步骤(5)中,所述的腐蚀浆料为碱性,通过控制烘干温度和时间,将硅片背面浆料局部覆盖的N++型磷重扩散晶硅层去除,露出N型硅基底,使得其为“指插状”,见图5.
优选方案:步骤(6)所述本征非晶硅薄膜层的厚度为1nm~50nm,所述p型非晶硅薄膜层厚度为2nm~20nm,方阻为10~100ohm/Sq。它能起到很好的背面钝化作用。
优选方案:步骤(7)中,所述的腐蚀浆料为碱性,通过控制烘干温度和时间,在剩余N++型磷重扩散晶硅层区域上方印刷腐蚀性浆料,去除其表面生长的本征非晶硅薄膜层和p型非晶硅薄膜层,露出N++型磷重扩散晶硅层。
优选方案:步骤(8)所述透明导电薄膜层的厚度为50nm~500nm,所述的透明导电薄膜层通过磁控溅射或反应离子沉积制备获得,材料可为In2O3:Sn(ITO)、In2O3、SnO2、SnO2:F(FTO)、ZnO:Al(ZAO)、In2O3:Mo(IMO)、SnO2:Sb(ATO)、ZnO2-SnO2、ZnO2-In2O3、ZnAl2O4、In4Sn3O12、CdIn2O4、Zn2SnO4、GaInO3中一种。
优选方案:步骤(10)所述背电极的材料为Ag、Au、Al、Ni、Cu/Ni或Ti/Pd/Ag,背电极的厚度为10μm~100μm。
下面对本发明做进一步解释和说明:
通过本发明的方法所制备得到的电池结构的P型区域从上到下由N+型磷浅扩散晶硅层(N+-c-Si)、N型硅基底层(N-c-Si)、本征非晶硅薄膜层(i-a-Si)、p型非晶硅薄膜层(p-a-Si)、透明导电薄膜(TCO)、背电极构成,形成N+-c-Si/N-c-Si/i-a-Si/p-a-Si异质结构,可以提高太阳电池的转换效率本发明的电池结构的N型区域由N+型磷浅扩散晶硅层(N+-c-Si)、N型晶体硅(N-c-Si)、N++型磷重扩散晶硅层(N++-c-Si)、透明导电薄膜(TCO)、背电极构成。所述的硅片背面由N型区域的磷重扩散晶硅层(N++-c-Si)、N型晶硅基底(N-c-Si)和前表面磷浅扩散晶硅层(N+-c-Si)形成高低结,起到背面钝化和提升开路电压的作用。该电池结构受光面没有电极,不仅增加了受光面积,而且降低组件生产成本。
通过本发明的方法所制备得到的电池结构前表面纳米绒面结构大大增加了光的吸收;全背电极结构与晶硅/非晶硅异质结结构的相结合,将金属电极全部移至电池背面,受光面没有电极,降低了组件生产成本、电池的复合损失,从而光学损失和电阻均显著减少,效率大幅提升。因此,本发明能快速的应用于当前常规硅基太阳电池产业,可以显著提高太阳能电池的效率。
本发明的优势在于:
通过本发明的方法所制备得到的电池结构不会出现常规P型晶硅太阳能电池的光致衰退现象;全背电极有效降低了受光面的遮光面积和接触电阻,简化了后续组件生产的焊接工序,从而提高了太阳电池转换效率,并降低了生产成本;表面纳米绒面结构大大降低了光的反射率,增加了光的吸收,从而大大提高了电池的短路电流,有效提高了电池的转化效率。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是本发明的步骤(1)的结构示意图;
图2是本发明的步骤(2)的结构示意图;
图3是本发明的步骤(3)的结构示意图;
图4是本发明的步骤(4)的结构示意图;
图5是本发明的步骤(5)的结构示意图;
图6是本发明的步骤(6)的结构示意图;
图7是本发明的步骤(7)的结构示意图;
图8是本发明的步骤(8)的结构示意图;
图9是本发明的步骤(9)的结构示意图;
图10是本发明的步骤(10)的结构示意图;
其中,1是N型硅基底,2是纳米绒面层,3是N++型磷重扩散晶硅层,4是N+型磷浅扩散晶硅层,5是SiOx钝化/SiNx减反层,6.是本征非晶硅薄膜层,7是p型非晶硅薄膜层,8是透明导电薄膜层,9是背电极,10是开膜区,11是N区,12是P区。
具体实施方式
下面结合实施例和附图对本发明做进一步的解释和说明:
一种全背电极N型晶硅异质结太阳电池结构,包括N型硅基底1,在所述N型硅基底1的前表面上由里至外依次有纳米绒面层2、N+型磷浅扩散晶硅层4以及SiOx钝化/SiNx减反层5;所述N型硅基底1的背面分为P区12、N区11和位于P区12、N区11之间的开膜区10;所述P区12从上到下包括本征非晶硅薄膜层6、p型非晶硅薄膜层7、透明导电薄膜层8和背电极9,且所述本征非晶硅薄膜层6与N型硅基底1的背表面连接;所述N区11从上到下包括N++型磷重扩散晶硅层3、透明导电薄膜层8以及背电极9,且所述N++型磷重扩散晶硅层3与所述N型硅基底1的背表面连接。
实施例1,如图1-10所示,一种全背电极N型晶硅异质结太阳电池的制备方法,包括以下步骤,
(1)采用金属催化化学刻蚀法,在N型硅基底前表面制备出类金字塔的纳米绒面,纳米绒面尺度为200nm,再用清洗工艺将残留金属粒子等有害物质清洗掉;
(2)通过磷源高温扩散,在N型硅基底背面制备获得N++型磷重扩散层晶硅层,其厚度为0.3μm,方块电阻为80ohm/Sq;
(3)通过磷源高温浅扩散,在N型硅基底背面制备获得N+型磷浅扩散层晶硅层,其厚度为0.3μm,方块电阻为130ohm/Sq;
(4)通过热氧化法,在N型硅基底前表面纳米绒面上先沉积SiOx薄膜作为钝化层,然后通过PECVD沉积法沉积SiNx薄膜作为减反层,其中SiOx厚度为20nm,SiNx厚度为50nm,SiNx折射率为2.2;
(5)通过控制腐蚀性浆料的烘干温度和时间,将硅片背面浆料局部覆盖的N++型磷重扩散层晶硅层去除,露出N型硅基底;
(6)通过PECVD沉积法,在硅片背面采用PECVD沉积法依次沉积一层本征非晶硅薄膜层和一层p型非晶硅薄膜层,其中本征非晶硅薄膜层厚度为10nm,p型非晶硅薄膜层厚度为10nm,方阻为80ohm/Sq;
(7)在硅片背面剩余N++型磷重扩散层晶硅层区域上方印刷腐蚀性浆料,通过控制烘干温度和时间,去除其表面生长的本征非晶硅薄膜层和p型非晶硅薄膜层,露出N++型磷重扩散层晶硅层;
(8)通过磁控溅射法,在硅片背面溅射一层透明导电薄膜层,其厚度为200nm。
(9)激光开膜法,将N型硅基底背面的本征非晶硅薄膜层、p型非晶硅薄膜层和TCO透明导电膜用激光划开,使得硅片背面的P区和N区分开,开膜宽度为20μm。
(10)N型硅基底背面通过丝网印刷银电极,低温烧结,烧结温度200℃,其厚度为20μm。
实施例2,如图1-10所示,一种全背电极N型晶硅异质结太阳电池的制备方法,包括以下步骤,
(1)采用金属催化化学刻蚀法,在N型硅基底前表面制备出类金字塔的纳米绒面,纳米绒面尺度为150nm,再用清洗工艺将残留金属粒子等有害物质清洗掉;
(2)通过离子注入法,在N型硅基底背面制备获得N++型磷重扩散层晶硅层,其厚度为0.2μm,方块电阻为70ohm/Sq;
(3)通过离子注入法,在N型硅基底背面制备获得N+型磷浅扩散层晶硅层,其厚度为0.2μm,方块电阻为150ohm/Sq;
(4)通过热氧化法,在N型硅基底前表面纳米绒面上先沉积SiOx薄膜作为钝化层,然后通过PECVD沉积法沉积SiNx薄膜作为减反层,其中SiOx厚度为15nm,SiNx厚度为50nm,SiNx折射率为2.0;
(5)通过控制腐蚀性浆料的烘干温度和时间,将硅片背面浆料局部覆盖的N++型磷重扩散层晶硅层去除,露出N型硅基底;
(6)通过PECVD沉积法,在硅片背面采用PECVD沉积法依次沉积一层本征非晶硅薄膜层和一层p型非晶硅薄膜层,其中本征非晶硅薄膜层厚度为15nm,p型非晶硅薄膜层厚度为15nm,方阻为10~100ohm/Sq;
(7)在硅片背面剩余N++型磷重扩散层晶硅层区域上方印刷腐蚀性浆料,通过控制烘干温度和时间,去除其表面生长的本征非晶硅薄膜层和p型非晶硅薄膜层,露出N++型磷重扩散层晶硅层;
(8)通过磁控溅射法,在硅片背面溅射一层透明导电薄膜层,其厚度为180nm。
(9)激光开膜法,将N型硅基底背面的本征非晶硅薄膜层、p型非晶硅薄膜层和TCO透明导电膜用激光划开,使得硅片背面的P区和N区分开,开膜宽度为10μm。
(10)N型硅基底背面通过丝网印刷银电极,低温烧结,烧结温度200℃,其厚度为18μm。
Claims (10)
1.一种全背电极N型晶硅异质结太阳电池的制备方法,其特征是,包括以下具体步骤:
(1)采用金属催化化学刻蚀法或等离子体刻蚀法在N型硅基底前表面制备纳米绒面,所述纳米绒面为类金字塔状或蜂窝状;
(2)通过磷源高温扩散或离子注入法,在N型硅基底背面重扩磷制备N++型磷重扩散晶硅层;
(3)通过磷源高温扩散或离子注入法,在N型硅基底前表面浅扩磷制备N+型磷浅扩散晶硅层;
(4)在N型硅基底前表面的纳米绒面上依次沉积SiOx薄膜和SiNx薄膜作为钝化层和减反层,得SiOx钝化/SiNx减反层;
(5)将N型硅基底背面的N++型磷重扩散晶硅层采用丝网印刷腐蚀性浆料腐蚀,将N++型磷重扩散晶硅层局部去除,部分露出N型硅基底;
(6)再采用PECVD沉积法,在步骤(5)的基础上,在N型硅基底背面依次沉积一层本征非晶硅薄膜层和一层p型非晶硅薄膜层;
(7)在N型硅基底背面的N++型磷重扩散晶硅层区域上方印刷腐蚀性浆料,去除其表面生长的本征非晶硅薄膜层和p型非晶硅薄膜层,露出N++型磷重扩散晶硅层;
(8)在步骤(7)的基础上,在N型硅基底背面溅射一层透明导电薄膜层;
(9)用激光将N型硅基底背面刻蚀开膜,开膜宽度为1μm~50μm,将N型硅基底背面分为P区和N区;
(10)最后在N型硅基底背面丝网印刷背电极,在100℃~300℃的温度下烧结,烧结时间为10s~600s,得全背电极N型晶硅异质结太阳电池。
2.根据权利要求1所述全背电极N型晶硅异质结太阳电池的制备方法,其特征是,所述全背电极N型晶硅异质结太阳电池包括N型硅基底,在所述N型硅基底的前表面上由里至外依次有纳米绒面、N+型磷浅扩散晶硅层以及SiOx钝化/SiNx减反层;所述N型硅基底的背面分为P区、N区和位于P区、N区之间的开膜区;所述P区从上到下包括本征非晶硅薄膜层、p型非晶硅薄膜层、透明导电薄膜层和背电极,且所述本征非晶硅薄膜层与N型硅基底的背表面连接;所述N区从上到下包括N++型磷重扩散晶硅层、透明导电薄膜层以及背电极,且所述N++型磷重扩散晶硅层与所述N型硅基底的背表面连接。
3.根据权利要求1或2所述全背电极N型晶硅异质结太阳电池的制备方法,其特征是,步骤(1)所述N型硅基底为N型单晶硅或多晶硅,厚度为50μm~300μm。
4.根据权利要求1或2所述全背电极N型晶硅异质结太阳电池的制备方法,其特征是,步骤(1)所述纳米绒面的厚度为50nm~900nm。
5.根据权利要求1或2所述全背电极N型晶硅异质结太阳电池的制备方法,其特征是,步骤(2)所述N++型磷重扩散晶硅层的厚度0.1μm~0.5μm,方块电阻为20~150ohm/Sq。
6.根据权利要求1或2所述全背电极N型晶硅异质结太阳电池的制备方法,其特征是,步骤(3)所述N+型扩散晶硅层的厚度为0.1μm~0.5μm,方块电阻为50~200ohm/Sq。
7.根据权利要求1或2所述全背电极N型晶硅异质结太阳电池的制备方法,其特征是,步骤(4)所述SiOx钝化/SiNx减反层的总厚度为25nm~150nm,所述的SiOx薄膜作为钝化层是通过热氧化法制备获得,SiNx薄膜作为减反层是通过PECVD法制备获得,其中SiOx厚度为5nm~50nm,SiNx为20nm~100nm,SiNx折射率为1.9~2.3。
8.根据权利要求1或2所述全背电极N型晶硅异质结太阳电池的制备方法,其特征是,步骤(6)所述本征非晶硅薄膜层的厚度为1nm~50nm,所述p型非晶硅薄膜层厚度为2nm~20nm,方阻为10~100ohm/Sq。
9.根据权利要求1或2所述全背电极N型晶硅异质结太阳电池的制备方法,其特征是,步骤(8)所述透明导电薄膜层的厚度为50nm~500nm,所述的透明导电薄膜层通过磁控溅射或反应离子沉积制备获得,材料可为In2O3:Sn(ITO)、In2O3、SnO2、SnO2:F(FTO)、ZnO:Al(ZAO)、In2O3:Mo(IMO)、SnO2:Sb(ATO)、ZnO2-SnO2、ZnO2-In2O3、ZnAl2O4、In4Sn3O12、CdIn2O4、Zn2SnO4、GaInO3中一种。
10.根据权利要求1或2所述全背电极N型晶硅异质结太阳电池的制备方法,其特征是,步骤(10)所述背电极的材料为Ag、Au、Al、Ni、Cu/Ni或Ti/Pd/Ag,背电极的厚度为10μm~100μm。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410424158.1A CN104157717B (zh) | 2014-08-26 | 2014-08-26 | 一种全背电极n型晶硅异质结太阳电池的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410424158.1A CN104157717B (zh) | 2014-08-26 | 2014-08-26 | 一种全背电极n型晶硅异质结太阳电池的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104157717A CN104157717A (zh) | 2014-11-19 |
CN104157717B true CN104157717B (zh) | 2017-01-25 |
Family
ID=51883172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410424158.1A Active CN104157717B (zh) | 2014-08-26 | 2014-08-26 | 一种全背电极n型晶硅异质结太阳电池的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104157717B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105789342B (zh) * | 2016-03-07 | 2018-01-23 | 中山大学 | 一种氧化物‑金属多层膜背接触晶体硅太阳电池及其制备方法 |
CN107799613A (zh) * | 2017-10-17 | 2018-03-13 | 张家港协鑫集成科技有限公司 | 纳米绒面多晶硅电池叠层减反射膜及其制备方法、以及应用 |
WO2019102073A1 (en) * | 2017-11-24 | 2019-05-31 | Aalto-Korkeakoulusäätiö Sr | Photovoltaic semiconductor structure |
CN108963005B (zh) * | 2018-07-05 | 2021-01-26 | 深圳市拉普拉斯能源技术有限公司 | 一种新型复合结构全背面异质结太阳电池及制备方法 |
CN109659397B (zh) * | 2018-12-25 | 2021-03-30 | 浙江晶科能源有限公司 | 一种ibc电池及其制作方法 |
CN112635607A (zh) * | 2020-11-06 | 2021-04-09 | 浙江爱旭太阳能科技有限公司 | 一种n型单晶硅hbc太阳电池结构及其制备方法 |
CN114649422A (zh) * | 2020-12-17 | 2022-06-21 | 浙江爱旭太阳能科技有限公司 | 一种硅基异质结太阳电池结构及制备方法 |
CN117238982A (zh) * | 2022-09-09 | 2023-12-15 | 晶科能源股份有限公司 | 光伏电池及其制备方法、光伏组件 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201212258A (en) * | 2010-09-15 | 2012-03-16 | Kuo-Chiang Hsu | Coplanar type photovoltaic cell and method for fabricating the same |
CN202134564U (zh) * | 2011-06-07 | 2012-02-01 | 合肥海润光伏科技有限公司 | 一种新型ibc 结构n型硅异质结电池 |
CN102931268B (zh) * | 2012-11-29 | 2015-07-01 | 山东力诺太阳能电力股份有限公司 | N型硅衬底背接触型式hit太阳电池结构和制备方法 |
-
2014
- 2014-08-26 CN CN201410424158.1A patent/CN104157717B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN104157717A (zh) | 2014-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104157717B (zh) | 一种全背电极n型晶硅异质结太阳电池的制备方法 | |
CN104167471B (zh) | 一种全背电极p型晶硅异质结太阳电池的制备方法 | |
CN106601855A (zh) | 一种双面发电异质结太阳能电池的制备方法 | |
CN102227002B (zh) | 多晶硅纳米线太阳能电池及其制备方法 | |
CN102184976A (zh) | 背接触异质结太阳电池 | |
CN102184975A (zh) | 一种能增加光电转换效率的薄膜太阳能电池及其制造方法 | |
CN102938429A (zh) | 一种减反射异质结太阳能电池及其制备方法 | |
CN102214719B (zh) | 基于n型硅片的背接触异质结太阳电池 | |
CN102751371A (zh) | 一种太阳能薄膜电池及其制造方法 | |
CN204130563U (zh) | 一种全背电极p型晶硅异质结太阳电池结构 | |
AU2011260301A1 (en) | Photovoltaic component for use under concentrated solar flux | |
EP4345913A1 (en) | Heterojunction solar cell and preparation method therefor | |
CN105449018A (zh) | 一种太阳能电池及其制备方法 | |
CN102214720B (zh) | 基于p型硅片的背接触异质结太阳电池 | |
CN102270668B (zh) | 一种异质结太阳能电池及其制备方法 | |
CN209119123U (zh) | 一种异质结双面太阳电池 | |
CN108735828A (zh) | 一种异质结背接触太阳能电池及其制备方法 | |
CN103227228A (zh) | P型硅衬底异质结电池 | |
CN106159094A (zh) | 一种基于硅基微纳结构的钙钛矿太阳电池及其制备方法 | |
CN202210522U (zh) | 基于p型硅片的背接触异质结太阳电池结构 | |
CN202210533U (zh) | 基于n型硅片的背接触异质结太阳电池结构 | |
CN102280501B (zh) | 一种硅基埋栅薄膜太阳能电池 | |
US8748728B2 (en) | Thin-film solar cell module and a manufacturing method thereof | |
CN203839392U (zh) | 一种太阳能电池 | |
CN202977494U (zh) | 一种晶体硅\非晶硅双节双面电池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |