CN108123037B - Mim电容器及其制作方法 - Google Patents
Mim电容器及其制作方法 Download PDFInfo
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- CN108123037B CN108123037B CN201711350249.5A CN201711350249A CN108123037B CN 108123037 B CN108123037 B CN 108123037B CN 201711350249 A CN201711350249 A CN 201711350249A CN 108123037 B CN108123037 B CN 108123037B
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- Prior art keywords
- groove
- layer
- conductive substrate
- trench
- mim capacitor
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- 239000003990 capacitor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 32
- 239000004020 conductor Substances 0.000 claims abstract description 30
- 230000000149 penetrating effect Effects 0.000 claims abstract description 19
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN201711350249.5A CN108123037B (zh) | 2017-12-15 | 2017-12-15 | Mim电容器及其制作方法 |
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CN201711350249.5A CN108123037B (zh) | 2017-12-15 | 2017-12-15 | Mim电容器及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN108123037A CN108123037A (zh) | 2018-06-05 |
CN108123037B true CN108123037B (zh) | 2020-11-20 |
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CN201711350249.5A Active CN108123037B (zh) | 2017-12-15 | 2017-12-15 | Mim电容器及其制作方法 |
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CN (1) | CN108123037B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113130444B (zh) * | 2019-12-30 | 2022-08-26 | 中芯国际集成电路制造(北京)有限公司 | 一种半导体结构及其形成方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104681403A (zh) * | 2013-11-26 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7535079B2 (en) * | 2005-06-09 | 2009-05-19 | Freescale Semiconductor, Inc. | Semiconductor device comprising passive components |
KR20100041179A (ko) * | 2008-10-13 | 2010-04-22 | 매그나칩 반도체 유한회사 | 유전체, 이를 구비한 캐패시터 및 그 제조방법, 반도체 소자 제조방법 |
CN102420102B (zh) * | 2011-05-26 | 2013-06-26 | 上海华力微电子有限公司 | 一种形成mim电容器结构的方法及mim电容器 |
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2017
- 2017-12-15 CN CN201711350249.5A patent/CN108123037B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104681403A (zh) * | 2013-11-26 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
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Publication number | Publication date |
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CN108123037A (zh) | 2018-06-05 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20201102 Address after: Longtian Daqiao North Road East industrial assembly area, group 25, Dali Village, Hai'an City, Nantong City, Jiangsu Province 226602 Applicant after: Jiangsu Xiliou Intelligent Electrical Technology Co.,Ltd. Address before: 518000 Guangdong city of Shenzhen province Baoan District Fuyong Street Peace community Junfeng Industrial Zone A3 building the first floor Applicant before: SHENZHEN JINGTE SMART MANUFACTURING TECHNOLOGY Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: MIM capacitors and their manufacturing methods Granted publication date: 20201120 Pledgee: Haian Xinyuan rural small loan Co.,Ltd. Pledgor: Jiangsu Xiliou Intelligent Electrical Technology Co.,Ltd. Registration number: Y2024980022851 |