CN108122908A - A kind of high voltage positive-negative-positive counnter attack fills analog line driver and its manufacturing method - Google Patents
A kind of high voltage positive-negative-positive counnter attack fills analog line driver and its manufacturing method Download PDFInfo
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- CN108122908A CN108122908A CN201611079421.3A CN201611079421A CN108122908A CN 108122908 A CN108122908 A CN 108122908A CN 201611079421 A CN201611079421 A CN 201611079421A CN 108122908 A CN108122908 A CN 108122908A
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- line driver
- analog line
- counnter attack
- pnp pipe
- positive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0783—Lateral bipolar transistors in combination with diodes, or capacitors, or resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
Abstract
The present invention relates to a kind of high voltage positive-negative-positive counnter attacks to fill analog line driver and its manufacturing method, the analog line driver includes PNP pipe and pull-up resistor, one end of the pull-up resistor is connected to the emitter of the PNP pipe and the other end is connected to the base stage of the PNP pipe, to realize that the current potential of the base stage pulls up, the input terminal of the PNP pipe transmitting extremely analog line driver, the analog line driver further includes a counnter attack and fills diode, counnter attack fills the collector of the diode anode connection PNP pipe, and counnter attack fills the output terminal that diode cathode is analog line driver.Compared with prior art, present invention tool power-actuator structures are simple, manufacturing process is easy, performance is good, at low cost.
Description
Technical field
The present invention relates to one kind to extend out with analog line driver and its manufacturing method, more particularly, to a kind of high voltage positive-negative-positive
Counnter attack fills analog line driver and its manufacturing method.
Background technology
With making constant progress for power device, application circuit also becomes increasingly complex, to control circuit and actuation techniques
Requirement it is also higher and higher.Although the efficiency of single power device improves, controls and simplifies, the complexity of circuit is to using
Person proposes new requirement, it is therefore desirable to provide a kind of integrated high voltage analog line driver.
The basic functional principle of LDO (low pressure difference linear voltage regulator) is such：System powers up, if enabled foot is in height
During level, circuit starts to start, and constant-current source circuit provides biasing to entire circuit, and a reference source voltage quickly establishes, export with
Input constantly rises, and when output is up to specified value, the output feedback voltage obtained by feedback network is also close to benchmark
Voltage value, at this time error amplifier the error small-signal exported between feedback voltage and reference voltage is amplified, then through adjusting
Homogeneous tube is amplified to output, so as to form negative-feedback, ensure that output voltage stabilization on specified value, similarly if input voltage becomes
Change or output current variation, this closed loop will remain unchanged output voltage.
The existing anti-sink current Producing reason of LDO power supplys, the moment of switching on and shutting down typically in power supply, in practical application
The output voltage for being present with the short time is higher than the situation of input voltage, since output terminal is connected to the voltage stabilizing electricity of larger capacitance value
Hold, electric current can lead to from output terminal to input terminal reverse flow, so as to cause the damage to analog line driver or preceding polar circuit.
The method that usually counnter attack fills at present is in the external discrete component of input terminal, can use diode or metal-oxide-semiconductor, however this side
Formula cost performance is low, and reliability is low, thus how to design a kind of high voltage and from belt current counnter attack fill function analog line driver be
One major issue.
The content of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of high voltage positive-negative-positive is prevented
It is anti-to fill analog line driver and its manufacturing method.
The purpose of the present invention can be achieved through the following technical solutions：
A kind of high voltage positive-negative-positive counnter attack fills analog line driver, which includes PNP pipe and pull-up resistor, described
One end of pull-up resistor be connected to the emitter of the PNP pipe and the other end is connected to the base stage of the PNP pipe, to realize
The current potential pull-up of the base stage, the input terminal of PNP pipe transmitting extremely analog line driver, the PNP pipe base stage is described
Analog line driver control terminal, the analog line driver further includes counnter attack and fills diode, and counnter attack fills diode anode
The collector of the connection PNP pipe, counnter attack fill the output terminal that diode cathode is analog line driver.
The PNP pipe is managed for longitudinal P NP.
The PNP pipe is positive pressure-resistant for 40V, maximum drive current 1A.
The pull-up resistor is that resistance value is the pull-up resistor realized with PNP pipe in same process for making.
It is using the making of substrate epitaxial material and with PNP pipe and pull-up resistor same that the counnter attack, which fills diode,
The counnter attack realized in one process for making fills diode.
A kind of high voltage positive-negative-positive counnter attack fills the manufacturing method of analog line driver, and this method comprises the following steps：
(1) N+/P- type epitaxial substrates are chosen, the P- layers of epitaxial substrate fill diode as the collector of PNP pipe and counnter attack
Anode, the N+ layers of epitaxial substrate fill the cathode of diode as counnter attack；
(2) PNP areas and resistance area are chosen in N+/P- type epitaxial substrates, passes through light in PNP areas and resistance area both sides respectively
It carves injection and is formed under p-type and isolated；
(3) N- extensions are deposited, isolation, which separates, under being formed respectively in PNP areas and resistance area by the p-type forms two N-
Epi island：
(4) formed in p-type and isolated in isolation under the p-type；
(5) multiple n+ areas, base of the Zhong n+ areas of PNP areas as PNP pipe are formed on two N- epi islands
Pole at least forms Liang Ge n+ areas in the resistance area, is used separately as two contact jaws of pull-up resistor；
(6) multiple p+ areas, emitter of the p+ areas as PNP pipe are formed on the N- epi islands in the PNP areas；
(7) by PNP pipe base stage, PNP pipe emitter and counnter attack fill diode cathode draw, using PNP pipe emitter as
The input terminal of analog line driver, counnter attack fill output terminal of the diode cathode as analog line driver, and PNP pipe base stage is driven as power
The control terminal of dynamic device.
According to the requirement of the voltage value of analog line driver output terminal come really when choosing N+/P- type epitaxial substrates in step (1)
Determine the concentration proportioning of N+/P- type epitaxial materials, counnter attack is made to fill the diode reversely pressure-resistant output voltage more than analog line driver, is prevented
It is 10V that anti-filling diode is reversely pressure-resistant.
The concentration of the outer delay adjustment N- of deposition N- and thickness cause the beta values of the PNP pipe in 0.5A in step (3)
It is more than 50 during driving current, and the PNP pipe is positive pressure-resistant for 40V.
Compared with prior art, the invention has the advantages that：
(1) analog line driver of the present invention is by setting PNP pipe, pull-up resistor and counnter attack to fill diode, so as to provide one
Kind high-gain high voltage simultaneously has the function of the analog line driver of anti-current flowing backwards；
(2) present invention reaches electric current counnter attack filling function by being internally integrated counnter attack filling diode in analog line driver, compared with
It is traditional to realize that electric current counnter attack fills function using independent transistor, present invention saves cost, be substantially improved cost performance and
Reliability；
(3) analog line driver manufacturing method of the present invention is the simplification to traditional Bipolar techniques, and tradition is omitted
Base and launch site in Bipolar techniques promote the common Bipolar techniques of technique ratio to simplify 30%, and the flow cycle is short, into
This is cheap；
(4) present invention chooses N+/P- type epitaxial substrates, using N+/P- types epitaxial substrate there are PN junction, so that material is in itself
Characteristic form counnter attack in analog line driver of the present invention and fill diode, suitable P- layers of extension concentration and thickness can be chosen,
It ties pressure-resistant and longitudinal counnter attack so as to take into account longitudinal P NP transistor collectors series resistance and B, C and fills the reversed resistance to of diode
Pressure, realization is simple and convenient, at low cost；
(5) in analog line driver manufacturing method of the present invention by adjust N- concentration and thickness so that PNP pipe is positive
Pressure-resistant is 40V, and method is simple, and it is convenient to realize；
(6) pull-up resistor realizes that resistance value is accurate by N- epi islands in analog line driver manufacturing method of the present invention, resistance
Value can be adjusted by layout size according to the design needs.
Description of the drawings
Fig. 1 is the structure diagram of analog line driver of the present invention；
Fig. 2 is the FB(flow block) of the manufacturing method of analog line driver of the present invention；
Fig. 3 is the cross-sectional view of analog line driver of the present invention；
Fig. 4 extends out scheme application circuit schematic diagram for analog line driver of the present invention in LDO.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment
As shown in Figure 1, a kind of high voltage positive-negative-positive counnter attack fills analog line driver, which includes PNP pipe and pull-up
Resistance, one end of pull-up resistor is connected to the emitter of the PNP pipe and the other end is connected to the base stage of the PNP pipe, to
Realize the current potential pull-up of the base stage, the input terminal of PNP pipe transmitting extremely analog line driver, PNP pipe base stage is driven as the power
The control terminal of dynamic device, analog line driver further include a counnter attack and fill diode, and counnter attack fills the current collection of diode anode connection PNP pipe
Pole, counnter attack fill the output terminal that diode cathode is analog line driver.R is pull-up resistor in Fig. 1, and D fills diode for counnter attack, and B is
The base stage of PNP pipe, E are the emitter of PNP pipe, and C is the collector of PNP pipe.PNP pipe is managed for longitudinal P NP.PNP pipe forward direction is pressure-resistant
For 40V, maximum drive current 1A.Pull-up resistor resistance value is 2K ohm.Pull-up resistor effect is in the base potential to PNP pipe
It draws, it is ensured that PNP pipe original state turns off, and counnter attack fills diode and plays counnter attack filling.
The flow chart that a kind of high voltage positive-negative-positive counnter attack of the present invention fills the manufacturing method of analog line driver is illustrated in figure 2, it should
Method includes the following steps：
Step 1：N+/P- type epitaxial substrates are chosen, the P- layers of epitaxial substrate fill two poles as the collector of PNP pipe and counnter attack
The anode of pipe, the N+ layers of epitaxial substrate fill the cathode of diode as counnter attack；
Step 2：PNP areas and resistance area are chosen in N+/P- type epitaxial substrates, is led to respectively in PNP areas and resistance area both sides
It crosses photoetching and injects to be formed under p-type and isolate；
Step 3：N- extensions are deposited, is formed in PNP areas and resistance area form two N- extensions by isolating partition under p-type respectively
Island：
Step 4：It is formed in p-type and isolated in isolation under the p-type；
Step 5：Form multiple n+ areas on two N- epi islands, base stage of the Zhong n+ areas of PNP areas as PNP pipe,
Liang Ge n+ areas are at least formed in the resistance area, are used separately as two contact jaws of pull-up resistor；
Step 6：Multiple p+ areas, emitter of the p+ areas as PNP pipe are formed on N- epi islands in the PNP areas；
Step 7：The cathode that PNP pipe base stage, PNP pipe emitter and counnter attack are filled to diode is drawn, and PNP pipe emitter is made
For the input terminal of analog line driver, counnter attack fills output terminal of the diode cathode as analog line driver, and PNP pipe base stage is as the work(
The control terminal of rate driver.
N is determined according to the requirement of the voltage value of analog line driver output terminal when N+/P- type epitaxial substrates are chosen in step 1
The concentration proportioning of +/P-type epitaxial material, makes counnter attack fill the diode reversely pressure-resistant output voltage more than driver, and counnter attack fills two
It is 10V that pole pipe is reversely pressure-resistant.
The concentration and thickness that the outer delay adjustment N- of N- are deposited in step 3 cause the beta values of PNP pipe in 0.5A driving currents
When be more than 50, and PNP pipe it is positive it is pressure-resistant be 40V.
As shown in figure 3, it is the cross-sectional view of analog line driver of the present invention, it is real that PNP pipe adopts longitudinal positive-negative-positive structure
Existing, collector is that the P- epitaxial layers of substrate and the anode of counnter attack filling diode share same layer, and the cathode that counnter attack fills diode is
The N+ layers of substrate, using the N+/P- type extension base materials of customization, take into account consider PNP pipe collector series resistance and B, C knot it is pressure-resistant with
And counnter attack filling diode is reversely pressure-resistant.N-type epitaxial layer is made on N+/P- type extension base materials, by controlling N- extensions in technique
The resistivity and thickness of layer and the injection of P+ type launch site and annealing conditions, it is accurate to control emitter junction depth, reach longitudinal P NP
The best compromise of pipe beta and BVCE0, typical beta values are more than 50 in 0.5A driving currents, and corresponding chip area is
0.4mm2, while BVCE0 is more than 40V.The separation N- epi islands realization that resistance is irised out using p-type isolation, resistance 2Kohm.
It is 10V that it is reversely pressure-resistant, which to fill diode, for counnter attack.
The present invention realizes high power longitudinal to the process flow chart of diode, longitudinal power P NP pipes and pull-up resistor simultaneously.It should
Technique has 7 photoetching altogether, and simple for process, flow is of low cost.It is using the N+/P- type epitaxial substrate materials of customization, base first
The N+ parts of piece are the cathode that counnter attack fills diode, and the output terminal as analog line driver, meeting, counnter attack filling diode is reversed
Should be as far as possible dense on the premise of resistance to pressure request, series resistance can be so reduced, improves the driveability of analog line driver, substrate
P- parts fill the anode of diode as the collector of power P NP pipes and counnter attack simultaneously, and the selection of N+/P- type extension base materials needs
It takes into account consideration PNP pipe collector series resistance and B, C knot is pressure-resistant and counnter attack filling diode is reversely pressure-resistant.BP is isolated under p-type,
Specific position is injected by photoetching selection, plays a part of to separate N- epi islands.The concentration and thickness of N- extensions are very crucial, directly
Connecing influences the beta of power P NP pipes and pressure-resistant, is adjusted by testing, it is big in 0.5A driving currents can to reach typical beta values
In 50, corresponding chip area is 0.4mm2, while it is positive pressure-resistant more than 40V.DP is to isolate in p-type and lower isolation BP is to logical
Afterwards, different N- epi islands are irised out, are used separately as PNP pipe base and pull-up resistor.The photoetching injection of N+ regions, while do PNP pipe
Base is drawn and the contact jaw of pull-up resistor is drawn.The photoetching injection of P+ regions, emitter and extraction as power P NP pipes lead to
The annealing thermal process after fine tuning injection is crossed, accurately controls emitter junction depth, takes into account high power longitudinal to the gain of PNP pipe and resistance to
Pressure, makes up to optimum balance.It finally completes passivation pressure point technique and back of the body gold is thinned, extend out the output terminal of analog line driver chip
It is drawn from substrate.
The manufacturing method of analog line driver of the present invention is simplified Bipolar techniques：1) traditional Bipolar techniques are omitted
In base and launch site promote technique, PNP pipe is high pressure resistant vertical bipolar device；2) collecting zone depth phosphorus technique, work(is omitted
The anode of the collector of rate PNP pipe and counnter attack filling diode shares the P- layers of extension base material；3) the N+ layers of extension base material are as anti-
The anti-cathode for filling diode, after forming good Ohmic contact by TiNiAg back of the body technology for gold, for making the output of driver
End；4) N-type epitaxial layer is made on N+/P- type epitaxial substrate materials, by adjusting the thickness and resistivity of N-type epitaxial layer,
Accurate control high power longitudinal is finally reached the optimum balance of high-gain high voltage, can do at present to the gain of PNP pipe and pressure-resistant
Pressure-resistant up to more than 40V to highest, maximum current can be more than 0.5V@1A, and typical beta values are more than 50；5) individual isolated island is used
N- epitaxial layers make high-precision 2K ohm of pull-up resistor, which can carry out conveniently by modification layout size
Adjustment.
The analog line driver of the present invention is suitble to LDO to extend out application, can provide larger current driving force, while can expire
The voltage stabilizing function of sufficient LDO.It is answered as shown in figure 4, filling analog line driver for high voltage positive-negative-positive counnter attack of the present invention and extending out scheme in LDO
With circuit diagram, LDO inputs the B poles for being connected on PNP pipe, and the cathode that LDO outputs are connected on counnter attack filling diode is rear defeated as extending out
The Vout ends gone out, the Vin ends of the E poles of PNP pipe as the input for extending out application, input capacitance Cin is connected between Vin and GND, defeated
Go out capacitance Cout to be connected between Vout and GND.Above-mentioned LDO extends out the basic principle of scheme application circuit：Analog line driver is indulged
It is a kind of basic Current amplifier type power device to power P NP triodes, integrated pull-up resistor makes its original state be
Close, integrated reverse-filling diode make it possess counnter attack fill function, when export terminal potential be higher than input terminal when electric current will not flow backwards.
It is controlled using the LDO chips of low-power consumption to carry out the base current of the PNP triode in analog line driver, while with LDO's
Output terminal carrys out sampled power driver output end voltage, and driver output voltage is made to remain the output voltage values of LDO, is entirely closed
Loop back path forms stable negative-feedback, and analog line driver is equivalent to the external Current amplifier adjustment pipe of LDO.The analog line driver
In PNP pipe requirement reach the application design object of high voltage, high-gain, high current.Be attempted by PNP pipe E poles and B extremely on electricity
Resistance, when this is extended out using being in the case of unloaded or extremely light load, thus it is ensured that power P NP pipes are in definite shut-off shape
State generates pressure drop when the load for extending out application starts to increase, after the overcurrent of resistance upstream and reaches VBE threshold values, and PNP pipe is opened at this time
The working condition driven into electric current.The counnter attack for being connected on PNP pipe collector fills the function that diode realizes counnter attack filling.
The preferred embodiment of the simply present invention described in this specification, above example are only to illustrate the present invention
Technical solution rather than limitation of the present invention.All those skilled in the art pass through logic analysis, reasoning under this invention's idea
Or the limited available technical solution of experiment, it all should be within the scope of the present invention.
Claims (8)
1. a kind of high voltage positive-negative-positive counnter attack fills analog line driver, which includes PNP pipe and pull-up resistor, described
One end of pull-up resistor is connected to the emitter of the PNP pipe and the other end is connected to the base stage of the PNP pipe, to realize
The current potential pull-up of base stage is stated, the input terminal of PNP pipe transmitting extremely analog line driver, the PNP pipe base stage is described
The control terminal of analog line driver, which is characterized in that the analog line driver further includes a counnter attack and fills diode, and counnter attack fills two
The collector of the pole pipe anode connection PNP pipe, counnter attack fill the output terminal that diode cathode is analog line driver.
2. a kind of high voltage positive-negative-positive counnter attack according to claim 1 fills analog line driver, which is characterized in that the PNP
It manages and is managed for longitudinal P NP.
3. a kind of high voltage positive-negative-positive counnter attack according to claim 1 fills analog line driver, which is characterized in that the PNP
Pipe is positive pressure-resistant for 40V, maximum drive current 1A.
4. a kind of high voltage positive-negative-positive counnter attack according to claim 1 fills analog line driver, which is characterized in that described is upper
Pull-up resistor is the pull-up resistor realized with PNP pipe in same process for making.
5. a kind of high voltage positive-negative-positive counnter attack according to claim 1 fills analog line driver, which is characterized in that described is anti-
The anti-diode that fills is using the making of substrate epitaxial material and with PNP pipe and pull-up resistor in same process for making
The counnter attack of realization fills diode.
6. a kind of high voltage positive-negative-positive counnter attack as described in claim 1 fills the manufacturing method of analog line driver, which is characterized in that
This method comprises the following steps：
(1) N+/P- type epitaxial substrates are chosen, the P- layers of epitaxial substrate fill the sun of diode as the collector of PNP pipe and counnter attack
Pole, the N+ layers of epitaxial substrate fill the cathode of diode as counnter attack；
(2) PNP areas and resistance area are chosen in N+/P- type epitaxial substrates, is noted respectively in PNP areas and resistance area both sides by photoetching
Enter to be formed and isolate under p-type；
(3) N- extensions are deposited, isolation, which separates, under being formed respectively in PNP areas and resistance area by the p-type forms two N- extensions
Island：
(4) formed in p-type and isolated in isolation under the p-type；
(5) multiple n+ areas, base stage of the Zhong n+ areas of PNP areas as PNP pipe, institute are formed on two N- epi islands
It states and Liang Ge n+ areas is at least formed in resistance area, be used separately as two contact jaws of pull-up resistor；
(6) multiple p+ areas, emitter of the p+ areas as PNP pipe are formed on the N- epi islands in the PNP areas；
(7) cathode that PNP pipe base stage, PNP pipe emitter and counnter attack are filled to diode is drawn, using PNP pipe emitter as power
The input terminal of driver, counnter attack fill output terminal of the diode cathode as analog line driver, and PNP pipe base stage is as analog line driver
Control terminal.
7. a kind of high voltage positive-negative-positive counnter attack according to claim 6 fills the manufacturing method of analog line driver, feature exists
When N+/P- type epitaxial substrates are chosen in, step (1) according to the requirement of the voltage value of analog line driver output terminal come determine N+/
The concentration proportioning of P-type epitaxial material, makes counnter attack fill the diode reversely pressure-resistant output voltage more than analog line driver, and counnter attack fills
It is 10V that diode is reversely pressure-resistant.
8. a kind of high voltage positive-negative-positive counnter attack according to claim 6 fills the manufacturing method of analog line driver, feature exists
In the concentration of the outer delay adjustment N- of deposition N- and thickness cause the beta values of the PNP pipe to drive electricity in 0.5A in step (3)
It is more than 50 during stream, and the PNP pipe is positive pressure-resistant for 40V.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611079421.3A CN108122908A (en) | 2016-11-30 | 2016-11-30 | A kind of high voltage positive-negative-positive counnter attack fills analog line driver and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611079421.3A CN108122908A (en) | 2016-11-30 | 2016-11-30 | A kind of high voltage positive-negative-positive counnter attack fills analog line driver and its manufacturing method |
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| CN108122908A true CN108122908A (en) | 2018-06-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113488526A (en) * | 2021-07-19 | 2021-10-08 | 江苏韦达半导体有限公司 | Miniature programmable surge protection device and manufacturing process thereof |
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|---|---|---|---|---|
| US4989114A (en) * | 1989-03-22 | 1991-01-29 | Sgs-Thomson Microelectronics S.R.L. | Bridge circuit having polarity inversion protection means entailing a reduced voltage drop |
| CN102035238A (en) * | 2010-12-28 | 2011-04-27 | 广东易事特电源股份有限公司 | Solar charging control circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113488526A (en) * | 2021-07-19 | 2021-10-08 | 江苏韦达半导体有限公司 | Miniature programmable surge protection device and manufacturing process thereof |
| CN113488526B (en) * | 2021-07-19 | 2023-10-13 | 江苏韦达半导体有限公司 | Miniature programmable surge protection device and manufacturing process thereof |
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