CN106487220B - Switch type converter and increasing apparatus - Google Patents
Switch type converter and increasing apparatus Download PDFInfo
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- CN106487220B CN106487220B CN201510545990.1A CN201510545990A CN106487220B CN 106487220 B CN106487220 B CN 106487220B CN 201510545990 A CN201510545990 A CN 201510545990A CN 106487220 B CN106487220 B CN 106487220B
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Abstract
A kind of switch type converter, comprising: upper bridge driver, upper bridge transistor, lower bridge driver, lower bridge transistor, capacitor and active diode.Upper bridge driver receives the bootstrap voltage mode of bootstrapping node and the floating reference voltage of floating reference node, and generates upper bridge output signal.Upper bridge transistor is provided to floating reference node according to upper bridge output signal, by input voltage.Lower bridge driver generates lower bridge output signal.Floating reference node is coupled to ground terminal according to lower bridge output signal by lower bridge transistor.Capacitor is coupled between bootstrapping node and floating reference node.Active diode is provided to bootstrapping node for voltage is supplied.When bootstrap voltage mode is higher than supply voltage, unidirectional switch elements are isolated according to control voltage, by supply voltage with bootstrapping node.
Description
Technical field
The invention relates to a kind of switch type converter and increasing apparatus with bootstrap voltage mode, in particular to
It is a kind of using Improvement type transistor as the switch type converter of bootstrap diode and increasing apparatus.
Background technique
In the application of switch type converter, the auxiliary of unidirectional switch elements and capacitor is generally required, so that upper bridge is brilliant
Body pipe can be fully on.Fig. 1 is the block diagram for showing the upper bridge driving circuit of a switch type converter.As shown in Figure 1, upper bridge
Driving circuit 100 includes upper bridge driver 101, upper bridge transistor 102, unidirectional switch elements 104 and capacitor 103.Due to defeated
Enter voltage VIN and be greater than supply voltage VS, and upper bridge transistor 102 is N-type transistor, in order to maintain upper bridge transistor 102 to continue
Conducting, needs that bootstrap voltage mode VB is promoted to input voltage VIN and supply using unidirectional switch elements 104 and capacitor 103
The sum of voltage VS.
In addition, unidirectional switch elements 104 are in addition to needing to provide the enough forward currents of capacitor 103 from supply voltage VS, it is single
To switch element 104 also to obstruct the bootstrap voltage mode VB after boosting to the reverse current for supplying voltage VS.It would therefore be desirable to
One effective percentage and the unidirectional switch elements 104 that can be integrated into integrated circuit, to promote circuit efficiency and reduce system
Cause this.
Summary of the invention
In view of this, the present invention proposes a kind of switch type converter, comprising: bridge driver on one, bridge transistor, one on one
Lower bridge driver, once bridge transistor, a capacitor and an active diode.Above-mentioned upper bridge driver receives a bootstrapping node
A bootstrap voltage mode and a floating reference node a floating reference voltage, and generate one on bridge output signal.Above-mentioned upper bridge
Transistor is provided to above-mentioned floating reference node according to above-mentioned upper bridge output signal, by an input voltage.Above-mentioned lower bridge driver
Generate bridge output signal.Above-mentioned lower bridge transistor couples above-mentioned floating reference node according to above-mentioned lower bridge output signal
To a ground terminal.Above-mentioned capacitor is coupled between above-mentioned bootstrapping node and above-mentioned floating reference node.Above-mentioned active two pole
One supply voltage is provided to above-mentioned bootstrapping node by pipe, wherein when above-mentioned bootstrap voltage mode is higher than above-mentioned supply voltage, above-mentioned list
To switch element according to a control voltage, above-mentioned supply voltage is isolated with above-mentioned bootstrapping node.
An embodiment according to the present invention, further includes a control logic.Above-mentioned control logic receives above-mentioned supply voltage, and
According to an input signal generate on one bridge driving signal to above-mentioned upper bridge driver and once bridge driving signal to above-mentioned lower bridge
Driver.
An embodiment according to the present invention, above-mentioned upper bridge driver further include: one first P-type transistor and one the oneth N
Transistor npn npn.The source terminal of above-mentioned first P-type transistor is coupled to above-mentioned bootstrapping node, and drain electrode end generates above-mentioned upper bridge output letter
Number, gate terminal receives above-mentioned upper bridge driving signal.The source terminal of above-mentioned first N-type transistor is coupled to above-mentioned floating reference section
Point, drain electrode end generate above-mentioned upper bridge output signal, and gate terminal receives above-mentioned upper bridge driving signal.
An embodiment according to the present invention, above-mentioned lower bridge driver further include: one second P-type transistor and one the 2nd N
Transistor npn npn.The source terminal of above-mentioned second P-type transistor receives above-mentioned supply voltage, and drain electrode end generates above-mentioned lower bridge output letter
Number, gate terminal receives above-mentioned lower bridge driving signal.The source terminal of above-mentioned second N-type transistor is coupled to above-mentioned ground terminal, drain electrode
End generates above-mentioned lower bridge output signal, and gate terminal receives above-mentioned lower bridge driving signal.
An embodiment according to the present invention, wherein above-mentioned active diode is a normally on transistors, when above-mentioned floating is joined
When examining node and being coupled to above-mentioned ground terminal, above-mentioned normally on transistors determines above-mentioned supply voltage to upper according to above-mentioned control voltage
A forward current of capacitor is stated, so that a voltage difference of above-mentioned capacitor storage, wherein when above-mentioned input voltage is provided to above-mentioned float
When dynamic reference mode, above-mentioned bootstrap voltage mode is the sum of above-mentioned input voltage and above-mentioned voltage difference, above-mentioned normally on transistors more root
According to above-mentioned control voltage, above-mentioned supply voltage and above-mentioned first node are isolated.
An embodiment according to the present invention, above-mentioned active diode are a N-type depletion mode transistor.
An embodiment according to the present invention, above-mentioned active diode are a p-type depletion mode transistor.
An embodiment according to the present invention, above-mentioned active diode are a N type junction field effect transistor.
An embodiment according to the present invention, above-mentioned active diode are a p-type junction field effect transistor.
The present invention more proposes a kind of increasing apparatus, comprising: a capacitor and an active diode.Above-mentioned capacitor includes one
First node and a second node, wherein above-mentioned second node alternately receives a first voltage and a second voltage.On
State active diode and one supply voltage be provided to above-mentioned first node, and according to a control voltage by above-mentioned first node with
Above-mentioned supply voltage isolation, wherein above-mentioned supply voltage is less than above-mentioned second voltage, and above-mentioned supply voltage is greater than above-mentioned first
Voltage.
An embodiment according to the present invention, wherein above-mentioned active diode is a normally on transistors, when above-mentioned second section
When point receives above-mentioned first voltage, above-mentioned supply voltage is provided to above-mentioned first node by above-mentioned normally on transistors, to upper
State capacitor charging.When above-mentioned second node receives above-mentioned second voltage, above-mentioned normally on transistors will according to above-mentioned control voltage
Above-mentioned supply voltage and the isolation of above-mentioned first node.
An embodiment according to the present invention, when above-mentioned second node receives above-mentioned first voltage, above-mentioned normally on transistors
According to above-mentioned control voltage, above-mentioned supply voltage is determined to a forward current of above-mentioned capacitor, so that the one of the storage of above-mentioned capacitor
Voltage difference, wherein the voltage of above-mentioned first node is above-mentioned second electricity when above-mentioned second node is coupled to above-mentioned second voltage
Pressure and the sum of above-mentioned voltage difference, above-mentioned normally on transistors is more according to above-mentioned control voltage, by above-mentioned supply voltage and above-mentioned
First node isolation avoids above-mentioned capacitor to above-mentioned supply tension discharge, wherein above-mentioned voltage difference is that above-mentioned supply voltage subtracts
Above-mentioned first voltage.
An embodiment according to the present invention, above-mentioned active diode are a N-type depletion mode transistor.
An embodiment according to the present invention, above-mentioned active diode are a p-type depletion mode transistor.
An embodiment according to the present invention, above-mentioned active diode are a N type junction field effect transistor.
An embodiment according to the present invention, above-mentioned active diode are a p-type junction field effect transistor.
By the switch type converter of aforementioned present invention, circuit efficiency can be promoted and reduce manufacturing cost.
Detailed description of the invention
Fig. 1 is the block diagram for showing the upper bridge driving circuit of a switch type converter；
Fig. 2 is the block diagram for showing suitching type circuit described in an embodiment according to the present invention；
Fig. 3 is the circuit diagram for showing increasing apparatus described in an embodiment according to the present invention；
Fig. 4 is the circuit diagram for showing the increasing apparatus described according to another embodiment of the present invention；
Fig. 5 is the circuit diagram for showing the increasing apparatus described according to another embodiment of the present invention；
Fig. 6 is the sectional view of normally on transistors described in the embodiment that shows according to the present invention；
Fig. 7 is the circuit diagram for showing the upper bridge driver of Fig. 2 described in an embodiment according to the present invention；And
Fig. 8 is the circuit diagram for showing the lower bridge driver of Fig. 2 described in an embodiment according to the present invention.
Drawing reference numeral
Bridge driving circuit on 100
101, bridge driver on 202,700
102, bridge transistor on 203
103,211,301,401,501 capacitor
104,212 unidirectional switch elements
200 suitching type circuits
201 control logics
204,800 lower bridge driver
205 lower bridge transistors
210,300,400,500 increasing apparatus
302 Schottky diodes；
402 matrixes insulation diode；
502 active diodes；
60 normally on transistors；
600 semiconductor substrates；
602 epitaxial layers；
The trap of 604 N-types；
The body region of 606 p-types；
The contact zone of 608 p-types；
The contact zone of 610 N-types；
The contact zone of 612 N-types；
614 field insulating layers；
616 gate structures；
618 gate insulation layers；
620 conductive source electrodes；
622 conductive gate electrodes；
624 conductive drain electrodes；
626 interlayer dielectric layers；
630 N+ doped regions；
632 P+ doped regions；
701 first P-type transistors；
702 first N-type transistors；
801 second P-type transistors；
802 second N-type transistors；
The upper bridge driving signal of SHD；
The upper bridge output voltage of SHO；
Bridge driving signal under SLD；
Bridge output signal under SLO；
NB bootstrapping node；
NF floating reference node；
VB bootstrap voltage mode；
VC controls voltage；
VF floating reference voltage；
VIN input voltage；
VS supplies voltage；
N1 anode tap；
N2 cathode terminal.
Specific embodiment
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, hereafter especially exemplified by a preferred embodiment, and
Cooperate institute's accompanying drawings, to be described in detail below:
Described below is preferred embodiment according to the present invention.It must be noted that the present invention provides permitted
Mostly applicable concept of the invention, disclosed specific embodiment herein, be only for explanation reach with use it is of the invention specific
Mode, without can be used to limit to the scope of the present invention.
Fig. 2 is the block diagram for showing suitching type circuit described in an embodiment according to the present invention.As shown in Fig. 2, switching
Formula circuit 200 includes control logic 201, upper bridge driver 202, upper bridge transistor 203, lower bridge driver 204, lower bridge transistor
205 and increasing apparatus 210, wherein input voltage VIN is greater than supply voltage VS.
An embodiment according to the present invention, suitching type circuit 200 are a half-bridge drive circuit (half bridge
driver)；According to another embodiment of the present invention, suitching type circuit 200 is suitching type buck converter；It is according to the present invention its
His embodiment, suitching type circuit 200 are other suitching type circuits, and wherein input voltage VIN is greater than supply voltage VS.
As shown in Fig. 2, control logic 201 receives the supply of supply voltage VS, and driven according to bridge in input signal SIN generation
The dynamic supreme bridge driver 202 of signal SHD, and lower bridge driving signal SLD is generated to lower bridge driver 204.Upper bridge driver 202
The supply of the floating reference voltage VF of the bootstrap voltage mode VB and floating reference node NF of bootstrapping node NB are received, and according to upper bridge
Driving signal SHD and generate bridge output signal SHO, to control the movement of upper bridge transistor 203.According to the present invention one is real
Example is applied, the voltage level of upper bridge output signal SHO is between above-mentioned bootstrap voltage mode VB and above-mentioned floating reference voltage VF.
Lower bridge driver 204 receives the supply of supply voltage VS, and lower bridge output is generated according to lower bridge driving signal SLD
Signal SLO, to control lower bridge transistor 205, to control the movement of lower bridge transistor 205.According to the present invention one implements
Example, when bridge driver 204 controls the conducting of lower bridge transistor 205 using lower bridge output signal SLO instantly, upper bridge driver 202
It is not turned on using bridge transistor 203 in upper bridge output signal SHO control, floating reference node NF is via lower bridge transistor 205
And it is coupled to ground terminal, so that floating reference voltage VF is 0V.Upper bridge driver 202 and lower bridge driver 204, will be in hereafter
In be described in detail.
According to another embodiment of the present invention, when bridge transistor 205 is not turned under bridge driver 204 controls instantly, upper bridge
Driver 202 controls the upper conducting of bridge transistor 203 and input voltage VIN is provided to floating reference node NF, so that ginseng of floating
It examines voltage VF and is equal to input voltage VIN.Since upper bridge transistor 203 and lower bridge transistor 205 are identical element, in order to
Bridge transistor 203 and lower bridge transistor 205 gate-to-source cross-pressure all having the same in maintenance, therefore utilize increasing apparatus 210
Bootstrap voltage mode VB is boosted into supply the sum of voltage VS and input voltage VIN.
As shown in Fig. 2, increasing apparatus 210 includes capacitor 211 and unidirectional switch elements 212.Capacitor 211 is coupled to bootstrapping
Between node NB and floating reference node NF.Unidirectional switch elements 212 be coupled to supply voltage VS and bootstrapping node NB it
Between, an embodiment according to the present invention, when bootstrap voltage mode VB is less than supply voltage VS, unidirectional switch elements 212 will supply electricity
Pressure VS is provided to bootstrapping node NB.
According to another embodiment of the present invention, when bootstrap voltage mode VB is higher than supply voltage VS, unidirectional switch elements 212 will
Supply voltage VS is isolated with bootstrapping node NB, to avoid excessively high bootstrap voltage mode VB recharge to supply voltage VS, and will be other
Circuit damage.Increasing apparatus 210 will be described in detail below.
Fig. 3 is the circuit diagram for showing increasing apparatus described in an embodiment according to the present invention.As shown in figure 3, boosting dress
Setting 300 includes capacitor 301 and Schottky diode 302, and wherein Schottky diode 302 includes anode tap N1 and cathode terminal
N2.Anode tap N1 receives supply voltage VS, and cathode terminal N2 is coupled to bootstrapping node NB.Compared with Fig. 2, unidirectional switch elements 212
Replace with Schottky diode 302.
An embodiment according to the present invention, when floating reference node NF is coupled to ground terminal, supply voltage VS is greater than certainly
Voltage VB is lifted, Schottky diode 302 is connected, so that supply voltage VS charges to capacitor 301, the voltage difference that capacitor 301 stores
To supply voltage VS.When input voltage VIN is provided to floating reference node NF via the upper bridge transistor 203 of Fig. 2, ginseng of floating
It examines node VF and is equal to input voltage VIN.Since the voltage difference that capacitor 301 stores is supply voltage VS, so that bootstrap voltage mode VB
To supply the sum of voltage VS and input voltage VIN.
In order to increase Schottky diode 302 to the forward current of capacitor 301, the metal of Schottky diode 302 and
The contact area of doped layer needs to increase, however after increasing the contact area of metal and doped layer, Schottky diode 302
Reverse current increase therewith so that when bootstrap voltage mode VB be greater than supply voltage VS when, Schottky diode 302 can not effectively every
From bootstrap voltage mode VB and supply voltage VS.Therefore, although Schottky diode 302 can be as unidirectional switch elements 212
Using, but due to the limitation of the physical characteristic of Schottky diode 302 itself, and the efficiency of Schottky diode 302 is had
It is limited.
Fig. 4 is the circuit diagram for showing the increasing apparatus described according to another embodiment of the present invention.As shown in figure 4, boosting
Device 400 includes that capacitor 401 and matrix insulate diode 402, wherein matrix insulation diode 402 include anode tap N1 and
Cathode terminal N2, wherein anode tap N1 receives supply voltage VS, and cathode terminal N2 is coupled to bootstrapping node NB.Compared with Fig. 2, unidirectionally open
It closes element 212 and replaces with matrix insulation diode 402.
Although matrix insulation diode 402 is capable of providing compared with the better isolation effect of Schottky diode 302, due to
Matrix insulation diode 402 is located on p-type matrix, when matrix insulation diode 402 is forward connected, supplies voltage
VS is provided in the forward current of capacitor 401, has the electric current of part that can be lost via p-type matrix and cause power loss.
Fig. 5 is the circuit diagram for showing the increasing apparatus described according to another embodiment of the present invention.As shown in figure 5, boosting
Device 500 include capacitor 501 and active diode 502, wherein active diode 502 be coupled to supply voltage VS and
Between bootstrapping node NB, and receive the control of control voltage VC.Compared with Fig. 2, unidirectional switch elements 212 replace with active two
Pole pipe 502.
An embodiment according to the present invention, active diode 502 are N-type or p-type depletion mode transistor.According to the present invention
Another embodiment, active diode 502 be p-type or N type junction field effect transistor.According to other embodiments of the invention,
Active diode 502 is normally opened (normally-ON) transistor invented and not yet invented at present.
Fig. 6 is the sectional view of normally on transistors described in the embodiment that shows according to the present invention.Normally on transistors 60 is
One N-type device, and the semiconductor substrate 600 including p-type and the epitaxial layer being set on this semiconductor substrate 600
(epitaxial layer)602.According to another embodiment of the present invention, normally on transistors 60 is a p-type device, is filled in this N-type
It sets to be only to illustrate and be used.In being provided with a gate structure 616 and a field insulating layer 614 on epitaxial layer 602.Gate insulation layer 618
It is to be set between gate structure 616 and field insulating layer 614.One of gate insulation layer 618 extends and covers field insulating layer 614
One.
Furthermore in the body region 606 and N-type for being respectively arranged with p-type in the epitaxial layer of the two sides of gate structure 616 602
Trap 604.The trap 604 of N-type is set within semiconductor substrate 600 and 602 the two of epitaxial layer.The contact zone 608 of p-type with it is neighbouring
The contact zone 610 of N-type together form the source region in body region 606.The contact zone 612 of N-type, which forms, to be located at
A drain region in trap 604.Furthermore in being provided with a P+ doped region 632 in trap 604 and it extends to trap towards body region 606
Except 604.Normally on transistors 60 further includes the N+ doped region 630 being stacked on P+ doped region 632.N+ doped region 630 is also set
It is placed in trap 604 and is extended to except trap 604 towards body region 606.In section Example, these N+ doped regions 630 and P+
Doped region 632 can overlap on one of body region 606 by extension, but not in contact with source area 608/610.In section Example
In, N+ doped region 630 and P+ doped region 632 may extend to except trap 604 but do not overlap on body region 606.
Furthermore normally on transistors 60 further includes electrical ties in a conductive source of p-type contact zone 608 and N-type contact zone 610
Electrode 620.One conductive drain electrode 624 is electrical ties in N-type contact zone 612.One conductive gate electrode 622 is electrical ties in grid
Pole structure 616.By the setting of interlayer dielectric layer 626 to cover conductive source electrode 620, conductive gate electrode 622 and lead
Electric drain electrode 624.
An embodiment according to the present invention, the active diode 502 of Fig. 5 are the normally on transistors 60 of Fig. 6, wherein Fig. 6
Conductive source electrode 620 be receive Fig. 5 supply voltage VS, and conductive drain electrode 624 be coupled to bootstrapping node NB, and
Conductive gate electrode 622 is to receive control voltage VC.When supplying voltage VS greater than bootstrap voltage mode VB, supply voltage VS can be certainly
It so charges to capacitor 501, and the conducting resistance of normally on transistors 60 can reduce due to controlling voltage VC and increasing, and to lead
The resistance that is powered is negligible.When bootstrap voltage mode VB be greater than supply voltage VS when, normally on transistors 60 can according to control voltage VC and
It is not turned on, and then avoids bootstrap voltage mode VB to supply voltage VS charging.
An embodiment according to the present invention does not need bias since active diode 502 is a normally on transistors
It can then be connected.In addition, can more control the forward current of active diode 502 by adjusting control voltage VC.When bootstrapping electricity
When VB being pressed to be greater than supply voltage VS, active diode 502 can be also not turned on according to control voltage VC, use isolation supply electricity
Press VS and bootstrapping node NB.
It below will be by taking active diode 502 be a N-type depletion mode transistor as an example, to the present invention will be described in detail.When
When supplying voltage VS greater than bootstrap voltage mode VB, due to the normally opened physical characteristic of N-type depletion mode transistor, when control voltage VC is 0V
When, N-type depletion mode transistor will supply voltage VS and be provided to bootstrapping node NB.As control voltage VC increases, voltage VS is supplied
Also increase therewith via the electric current that N-type depletion mode transistor flow to bootstrapping node NB.
When bootstrap voltage mode VB is greater than supply voltage VS, control voltage VC is increased so that control voltage VC subtracts supply electricity
It is less than the limit voltage of N-type depletion mode transistor after pressure VS, N-type depletion mode transistor can be not turned on, and then supply electricity is isolated
Press VS and bootstrapping node NB.
An embodiment according to the present invention, when supplying voltage VS greater than bootstrap voltage mode VB, control voltage VC is 0V to lead
Logical N-type depletion mode transistor.According to another embodiment of the present invention, when supplying voltage VS less than bootstrap voltage mode VB, control electricity
Pressing VC is supply voltage VS, so that N-type depletion mode transistor is not turned on, and supply voltage and bootstrapping node NB is isolated.
An embodiment according to the present invention, since unidirectional switch elements are depletion mode transistor and junction field effect transistor
One of pipe, therefore can be integrated into integrated circuit, and achieve the purpose that reduce production cost.Also, due to depletion type crystalline substance
The physical characteristic of body pipe and junction field effect transistor enables the designer to effectively control list using control voltage VC
To the reverse leakage current of switch element, the electricity of unidirectional switch elements can be also controlled using control voltage VC when being forward connected
Flow driving capability.
Fig. 7 is the circuit diagram for showing the upper bridge driver of Fig. 2 described in an embodiment according to the present invention.As shown in fig. 7,
Upper bridge driver 700 includes the first P-type transistor 701 and the first N-type transistor 702.The source electrode of first P-type transistor 701
End is coupled to bootstrapping node NB, and drain electrode end exports upper bridge output signal SHO, and gate terminal receives upper bridge driving signal SHD.First N
The source terminal of transistor npn npn 702 is coupled to floating reference node NF, and drain electrode end exports upper bridge output signal SHO, and gate terminal receives
Upper bridge driving signal SHD.
Fig. 8 is the circuit diagram for showing the lower bridge driver of Fig. 2 described in an embodiment according to the present invention.As shown in figure 8,
Lower bridge driver 800 includes the second P-type transistor 801 and the second N-type transistor 802.The source electrode of second P-type transistor 801
End receives supply voltage VS, and drain electrode end exports lower bridge output signal SLO, and gate terminal receives lower bridge driving signal SLD.Second N-type
The source terminal of transistor 802 is coupled to ground terminal, and drain electrode end exports lower bridge output signal SLO, and gate terminal receives lower bridge driving letter
Number SLD.
The feature of many embodiments described above makes those of ordinary skill in the art clearly understood that this
The form of specification.Those of ordinary skill in the art it will be appreciated that its using disclosure of the present invention based on
It completes the purpose for being identical to above-described embodiment and/or reaches to be identical to above-mentioned implementation to design or change other techniques and structure
The advantages of example.Those of ordinary skill in the art is not also it will be appreciated that depart from the equivalent of the spirit and scope of the present invention
Construction can be made arbitrarily to change without departing from the spirit and scope of the present invention, substitute and retouching.
Claims (16)
1. a kind of switch type converter, which is characterized in that the switch type converter includes:
Bridge driver on one receives a bootstrap voltage mode of a bootstrapping node and the floating reference electricity of a floating reference node
Pressure, and generate bridge output signal on one；
One input voltage is provided to the floating reference node according to the upper bridge output signal by bridge transistor on one；
Bridge driver once generates bridge output signal；
The floating reference node is coupled to a ground terminal according to the lower bridge output signal by bridge transistor once；
One capacitor is coupled between the bootstrapping node and the floating reference node；And
One supply voltage is provided to the bootstrapping node, wherein described in being higher than when the bootstrap voltage mode by one active diode
When supplying voltage, the supply voltage is isolated with the bootstrapping node according to a control voltage for the active diode,
Described in active diode be a normally on transistors.
2. switch type converter according to claim 1, which is characterized in that the switch type converter further includes:
One control logic receives the supply voltage, and according to bridge driving signal in input signal generation one to the upper bridge
Driver and once bridge driving signal are to the lower bridge driver.
3. switch type converter according to claim 2, which is characterized in that the upper bridge driver further includes:
One first P-type transistor, source terminal are coupled to the bootstrapping node, and drain electrode end generates the upper bridge output signal, grid
End receives the upper bridge driving signal；And
One first N-type transistor, source terminal are coupled to the floating reference node, and drain electrode end generates the upper bridge output signal,
Gate terminal receives the upper bridge driving signal.
4. switch type converter according to claim 2, which is characterized in that the lower bridge driver further includes:
One second P-type transistor, source terminal receive the supply voltage, and drain electrode end generates the lower bridge output signal, gate terminal
Receive the lower bridge driving signal；And
One second N-type transistor, source terminal are coupled to the ground terminal, and drain electrode end generates the lower bridge output signal, gate terminal
Receive the lower bridge driving signal.
5. switch type converter according to claim 1, which is characterized in that described in being coupled to when the floating reference node
When ground terminal, the normally on transistors determines that the supply voltage is forward electric to the one of the capacitor according to the control voltage
Stream, so that a voltage difference of capacitor storage, wherein when the input voltage is provided to the floating reference node, it is described
Bootstrap voltage mode is the sum of the input voltage and the voltage difference, and the normally on transistors, will more according to the control voltage
The supply voltage and bootstrapping node isolation.
6. switch type converter according to claim 1, which is characterized in that the active diode is that a N-type exhausts
Transistor npn npn.
7. switch type converter according to claim 1, which is characterized in that the active diode is that a p-type exhausts
Transistor npn npn.
8. switch type converter according to claim 1, which is characterized in that the active diode is a N type junction field
Effect transistor.
9. switch type converter according to claim 1, which is characterized in that the active diode is a p-type junction field
Effect transistor.
10. a kind of increasing apparatus, which is characterized in that the increasing apparatus includes:
One capacitor, including a first node and a second node, wherein the second node alternately receives a first voltage
An and second voltage；And
One supply voltage is provided to the first node, and controls voltage for described first according to one by one active diode
Node is isolated with the supply voltage, wherein the supply voltage is less than the second voltage, and the supply voltage is greater than institute
First voltage is stated, wherein the active diode is a normally on transistors.
11. increasing apparatus according to claim 10, which is characterized in that
When the second node receives the first voltage, the supply voltage is provided to described the by the normally on transistors
One node, to the capacitor charging, wherein
When the second node receives the second voltage, the normally on transistors is according to the control voltage by the supply
Voltage and first node isolation.
12. increasing apparatus according to claim 11, which is characterized in that when the second node receives the first voltage
When, the normally on transistors according to the control voltage, determine the supply voltage to a forward current of the capacitor so that
One voltage difference of the capacitor storage, wherein when the second node is coupled to the second voltage, the first node
Voltage is the sum of the second voltage and the voltage difference, and the normally on transistors, will be described more according to the control voltage
Voltage and first node isolation are supplied, avoids the capacitor to the supply tension discharge, wherein the voltage difference is
The supply voltage subtracts the first voltage.
13. increasing apparatus according to claim 10, which is characterized in that the active diode is a N-type depletion type
Transistor.
14. increasing apparatus according to claim 10, which is characterized in that the active diode is a p-type depletion type
Transistor.
15. increasing apparatus according to claim 10, which is characterized in that the active diode is N type junction field effect
Answer transistor.
16. increasing apparatus according to claim 10, which is characterized in that the active diode is p-type junction field effect
Answer transistor.
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| CN201510545990.1A CN106487220B (en) | 2015-08-31 | 2015-08-31 | Switch type converter and increasing apparatus |
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| CN108306489B (en) * | 2018-01-26 | 2020-04-21 | 成都芯源系统有限公司 | Drive circuit, control circuit and drive method of buck-boost switching converter |
| TWI691157B (en) * | 2018-10-22 | 2020-04-11 | 台達電子工業股份有限公司 | Power circuit and driving circuit |
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| CN1914787A (en) * | 2004-01-28 | 2007-02-14 | 株式会社瑞萨科技 | Switching power supply and semiconductor integrated circuit |
| TW200845544A (en) * | 2007-05-08 | 2008-11-16 | Richtek Technology Corp | Charging circuit for bootstrap capacitor and integrated driver circuit using same |
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|---|---|---|---|---|
| DE10001394A1 (en) * | 2000-01-14 | 2001-07-26 | Infineon Technologies Ag | Circuit for applying clocked supply voltage to load requires no auxiliary winding, discrete components; very small power losses arise in applying supply voltage - has switch connected between load and control circuit's first voltage supply connection with control connection to which drive signal is applied |
| US20080123373A1 (en) * | 2006-11-29 | 2008-05-29 | General Electric Company | Current fed power converter system including normally-on switch |
| CN101247080B (en) * | 2007-02-16 | 2011-05-11 | 立锜科技股份有限公司 | Circuit for charging bootstrap capacitor of voltage converter |
| JP5586088B2 (en) * | 2010-06-07 | 2014-09-10 | ローム株式会社 | STEP-UP DC / DC CONVERTER AND ELECTRONIC DEVICE HAVING THE SAME |
| CN102904565B (en) * | 2012-10-09 | 2014-05-28 | 长安大学 | Level shift circuit for DC-DC (Direct Current) driven ultra-low static current |
-
2015
- 2015-08-31 CN CN201510545990.1A patent/CN106487220B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1914787A (en) * | 2004-01-28 | 2007-02-14 | 株式会社瑞萨科技 | Switching power supply and semiconductor integrated circuit |
| TW200845544A (en) * | 2007-05-08 | 2008-11-16 | Richtek Technology Corp | Charging circuit for bootstrap capacitor and integrated driver circuit using same |
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| Publication number | Publication date |
|---|---|
| CN106487220A (en) | 2017-03-08 |
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