CN106487220A - Switch type converter and increasing apparatus - Google Patents
Switch type converter and increasing apparatus Download PDFInfo
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- CN106487220A CN106487220A CN201510545990.1A CN201510545990A CN106487220A CN 106487220 A CN106487220 A CN 106487220A CN 201510545990 A CN201510545990 A CN 201510545990A CN 106487220 A CN106487220 A CN 106487220A
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Abstract
A kind of switch type converter, including：Upper bridge driver, upper bridge transistor, lower bridge driver, lower bridge transistor, electric capacity and active diode.Upper bridge driver receives the bootstrapping bootstrap voltage mode of node and the floating reference voltage of floating reference node, and produces bridge output signal.Upper bridge transistor, according to upper bridge output signal, input voltage is provided to floating reference node.Lower bridge driver produces lower bridge output signal.Lower bridge transistor, according to lower bridge output signal, floating reference node is coupled to earth terminal.Electric capacity is coupled between bootstrapping node and floating reference node.Active diode will be supplied voltage and provide to bootstrapping node.When bootstrap voltage mode is higher than supply voltage, single-phase switch element, according to control voltage, will supply voltage and bootstrapping node isolation.
Description
Technical field
The invention relates to a kind of switch type converter with bootstrap voltage mode and increasing apparatus, in particular to
A kind of switch type converter by the use of Improvement type transistor as bootstrap diode and increasing apparatus.
Background technology
In the application of switch type converter, generally require the auxiliary of unidirectional switch elements and electric capacity so that upper bridge is brilliant
Body pipe can be fully on.Fig. 1 is the block chart of the upper bridge drive circuit showing a switch type converter.As Fig. 1
Shown, upper bridge drive circuit 100 includes bridge driver 101, upper bridge transistor 102, unidirectional switch elements 104
And electric capacity 103.Because input voltage VIN is more than supply voltage VS, and upper bridge transistor 102 is N-type crystal
Pipe, in order to maintain upper bridge transistor 102 constant conduction, needs using unidirectional switch elements 104 and electric capacity 103
Bootstrap voltage mode VB is promoted to input voltage VIN and supply voltage VS sum.
Additionally, unidirectional switch elements 104 are except needing to provide electric capacity 103 enough forward currents from supply voltage VS,
Unidirectional switch elements 104 are also in order to intercept the bootstrap voltage mode VB after boosting to the reverse current supplying voltage VS.Cause
This is it would be desirable to an effective percentage and can be integrated into unidirectional switch elements 104 in integrated circuit, in order to lift electricity
Road efficiency and reduction manufacturing cost.
Content of the invention
In view of this, the present invention proposes a kind of switch type converter, including：Bridge driver on one, bridge transistor on,
Bridge driver, once bridge transistor, an electric capacity and an active diode once.Above-mentioned upper bridge driver receives one
Bootstrapping one bootstrap voltage mode of node and a floating reference voltage of a floating reference node, and produce bridge output letter on
Number.Above-mentioned upper bridge transistor, according to above-mentioned upper bridge output signal, an input voltage is provided to above-mentioned floating reference node.
Above-mentioned lower bridge driver produces bridge output signal.Above-mentioned lower bridge transistor, will be upper according to above-mentioned lower bridge output signal
State floating reference node and be coupled to an earth terminal.Above-mentioned electric capacity is coupled to above-mentioned bootstrapping node and above-mentioned floating reference section
Between point.Above-mentioned active diode provides a supply voltage to above-mentioned bootstrapping node, wherein when above-mentioned bootstrap voltage mode
During higher than above-mentioned supply voltage, above-mentioned single-phase switch element according to a control voltage, by above-mentioned supply voltage with above-mentioned from
Lift node isolation.
According to one embodiment of the invention, further include a control logic.Above-mentioned control logic receives above-mentioned supply voltage,
And it is supreme to above-mentioned upper bridge driver and once bridge drive signal to produce bridge drive signal on according to an input signal
State lower bridge driver.
According to one embodiment of the invention, above-mentioned upper bridge driver further includes：One first P-type transistor and one first
N-type transistor.The source terminal of above-mentioned first P-type transistor is coupled to above-mentioned bootstrapping node, and drain electrode end produces on above-mentioned
Bridge output signal, gate terminal receives above-mentioned upper bridge drive signal.The source terminal of above-mentioned first N-type transistor is coupled to
Above-mentioned floating reference node, drain electrode end produces above-mentioned upper bridge output signal, and gate terminal receives above-mentioned upper bridge drive signal.
According to one embodiment of the invention, above-mentioned lower bridge driver further includes：One second P-type transistor and one second
N-type transistor.The source terminal of above-mentioned second P-type transistor receives above-mentioned supply voltage, and drain electrode end produces above-mentioned lower bridge
Output signal, gate terminal receives above-mentioned lower bridge drive signal.The source terminal of above-mentioned second N-type transistor is coupled to
State earth terminal, drain electrode end produces above-mentioned lower bridge output signal, gate terminal receives above-mentioned lower bridge drive signal.
According to one embodiment of the invention, wherein above-mentioned active diode is a normally on transistors, when above-mentioned floating ginseng
When examining node and being coupled to above-mentioned earth terminal, above-mentioned normally on transistors, according to above-mentioned control voltage, determines above-mentioned supply voltage
A forward current to above-mentioned electric capacity so that a voltage difference of above-mentioned electric capacity storage, wherein when above-mentioned input voltage provides
During to above-mentioned floating reference node, above-mentioned bootstrap voltage mode is above-mentioned input voltage and above-mentioned voltage difference sum, above-mentioned normal
Open transistor more according to above-mentioned control voltage, by above-mentioned supply voltage and the isolation of above-mentioned primary nodal point.
According to one embodiment of the invention, above-mentioned active diode is a N-type depletion mode transistor.
According to one embodiment of the invention, above-mentioned active diode is a p-type depletion mode transistor.
According to one embodiment of the invention, above-mentioned active diode is a N type junction field-effect transistor.
According to one embodiment of the invention, above-mentioned active diode is a p-type junction field effect transistor.
The present invention more proposes a kind of increasing apparatus, including：One electric capacity and an active diode.Above-mentioned electric capacity includes
One primary nodal point and a secondary nodal point, wherein above-mentioned secondary nodal point alternately receives a first voltage and one second electricity
Pressure.Above-mentioned active diode provides a supply voltage to above-mentioned primary nodal point, and will be above-mentioned according to a control voltage
Primary nodal point is less than above-mentioned second voltage with above-mentioned supply voltage isolation, wherein above-mentioned supply voltage, and above-mentioned supply electricity
Pressure is more than above-mentioned first voltage.
According to one embodiment of the invention, wherein above-mentioned active diode is a normally on transistors, when above-mentioned second section
When point receives above-mentioned first voltage, above-mentioned normally on transistors provides above-mentioned supply voltage to above-mentioned primary nodal point, in order to
Above-mentioned electric capacity is charged.When above-mentioned secondary nodal point receives above-mentioned second voltage, above-mentioned normally on transistors is according to above-mentioned control
Above-mentioned supply voltage and above-mentioned primary nodal point are isolated by voltage processed.
According to one embodiment of the invention, when above-mentioned secondary nodal point receives above-mentioned first voltage, above-mentioned normally on transistors
According to above-mentioned control voltage, determine above-mentioned supply voltage to a forward current of above-mentioned electric capacity so that the storage of above-mentioned electric capacity
A voltage difference, wherein when above-mentioned secondary nodal point is coupled to above-mentioned second voltage, the voltage of above-mentioned primary nodal point is upper
State second voltage and above-mentioned voltage difference sum, above-mentioned normally on transistors more according to above-mentioned control voltage, by above-mentioned supply
Voltage and the isolation of above-mentioned primary nodal point, it is to avoid above-mentioned electric capacity to above-mentioned supply tension discharge, wherein above-mentioned voltage difference is
Above-mentioned supply voltage deducts above-mentioned first voltage.
According to one embodiment of the invention, above-mentioned active diode is a N-type depletion mode transistor.
According to one embodiment of the invention, above-mentioned active diode is a p-type depletion mode transistor.
According to one embodiment of the invention, above-mentioned active diode is a N type junction field-effect transistor.
According to one embodiment of the invention, above-mentioned active diode is a p-type junction field effect transistor.
By the switch type converter of the invention described above, circuit efficiency can be lifted and reduce manufacturing cost.
Brief description
Fig. 1 is the block chart of the upper bridge drive circuit showing a switch type converter；
Fig. 2 is the block chart showing the suitching type circuit according to one embodiment of the invention；
Fig. 3 is the circuit diagram showing the increasing apparatus according to one embodiment of the invention；
Fig. 4 is the circuit diagram showing increasing apparatus described according to another embodiment of the present invention；
Fig. 5 is the circuit diagram showing increasing apparatus described according to another embodiment of the present invention；
Fig. 6 is the profile showing according to the normally on transistors described in one embodiment of the invention；
Fig. 7 is the circuit diagram of the upper bridge driver showing the Fig. 2 according to one embodiment of the invention；And
Fig. 8 is the circuit diagram of the lower bridge driver showing the Fig. 2 according to one embodiment of the invention.
Drawing reference numeral
Bridge drive circuit on 100
101st, bridge driver on 202,700
102nd, bridge transistor on 203
103rd, 211,301,401,501 electric capacity
104th, 212 unidirectional switch elements
200 suitching type circuit
201 control logics
204th, 800 times bridge drivers
205 times bridge transistors
210th, 300,400,500 increasing apparatus
302 Schottky diodes；
402 matrix insulation diodes；
502 active diodes；
60 normally on transistors；
600 semiconductor substrates；
602 epitaxial layers；
The trap of 604 N-types；
The body region of 606 p-types；
The contact area of 608 p-types；
The contact area of 610 N-types；
The contact area of 612 N-types；
614 field insulating layers；
616 grid structures；
618 gate insulation layers；
620 conductive source electrodes；
622 conductive gate electrode；
624 conductive drain electrodes；
626 interlayer dielectric layers；
630 N+ doped regions；
632 P+ doped regions；
701 first P-type transistor；
702 first N-type transistor；
801 second P-type transistor；
802 second N-type transistor；
SHD upper bridge drive signal；
SHO upper bridge output voltage；
Bridge drive signal under SLD；
Bridge output signal under SLO；
NB bootstrapping node；
NF floating reference node；
VB bootstrap voltage mode；
VC control voltage；
VF floating reference voltage；
VIN input voltage；
VS supplies voltage；
N1 anode tap；
N2 cathode terminal.
Specific embodiment
For enabling the above objects, features and advantages of the present invention to become apparent, hereafter especially exemplified by a preferred embodiment,
And coordinate institute's accompanying drawings, to be described in detail below：
Described below is according to preferred embodiment of the present invention.Must be it is noted that the invention provides being permitted
How applicable inventive concept, the specific embodiment disclosed by here, be only for illustrating to reach with the present invention's
Ad hoc fashion, and unavailable to limit to the scope of the present invention.
Fig. 2 is the block chart showing the suitching type circuit according to one embodiment of the invention.As shown in Fig. 2 cutting
Change formula circuit 200 include control logic 201, upper bridge driver 202, upper bridge transistor 203, lower bridge driver 204,
Lower bridge transistor 205 and increasing apparatus 210, wherein input voltage VIN are greater than supplying voltage VS.
According to one embodiment of the invention, suitching type circuit 200 is a half-bridge drive circuit (halfbridge driver)；
According to another embodiment of the present invention, suitching type circuit 200 is suitching type step-down controller；According to the present invention other
Embodiment, suitching type circuit 200 is other suitching type circuit, and wherein input voltage VIN is greater than supplying voltage VS.
As shown in Fig. 2 control logic 201 receives the supply of supply voltage VS, and produced according to input signal SIN
The supreme bridge driver 202 of upper bridge drive signal SHD, and produce lower bridge drive signal SLD to lower bridge driver
204.Upper bridge driver 202 receives the floating of the bootstrap voltage mode VB and floating reference node NF of bootstrapping node NB
The supply of reference voltage VF, and upper bridge output signal SHO is produced according to upper bridge drive signal SHD, in order to control
The action of bridge transistor 203 in system.According to one embodiment of the invention, the voltage level of upper bridge output signal SHO
It is between above-mentioned bootstrap voltage mode VB and above-mentioned floating reference voltage VF.
Lower bridge driver 204 receives the supply of supply voltage VS, and is produced down according to lower bridge drive signal SLD
Bridge output signal SLO, in order to control lower bridge transistor 205, in order to control the action of lower bridge transistor 205.According to
One embodiment of the invention, instantly bridge driver 204 control lower bridge transistor 205 using lower bridge output signal SLO
During conducting, upper bridge driver 202 is not turned on using bridge transistor 203 in upper bridge output signal SHO control, floats
Reference mode NF is to be coupled to earth terminal via lower bridge transistor 205 so that floating reference voltage VF is 0V.
Upper bridge driver 202 and lower bridge driver 204, will be described in detail below.
According to another embodiment of the present invention, when bridge driver 204 controls lower bridge transistor 205 to be not turned on instantly, on
Bridge driver 202 controls upper bridge transistor 203 to turn on and provide input voltage VIN to floating reference node NF,
Floating reference voltage VF is made to be equal to input voltage VIN.Due to upper bridge transistor 203 and lower bridge transistor 205
For identical element, in order to maintain upper bridge transistor 203 all to have identical gate-to-source with lower bridge transistor 205
Bootstrap voltage mode VB is boosted to supply voltage VS and input voltage VIN hence with increasing apparatus 210 by cross-pressure
Sum.
As shown in Fig. 2 increasing apparatus 210 include electric capacity 211 and unidirectional switch elements 212.Electric capacity 211 couples
Between bootstrapping node NB and floating reference node NF.Unidirectional switch elements 212 are coupled to supply voltage VS
And between bootstrapping node NB, according to one embodiment of the invention, when bootstrap voltage mode VB is less than supply voltage VS
When, unidirectional switch elements 212 will be supplied voltage VS and be provided to bootstrapping node NB.
According to another embodiment of the present invention, when bootstrap voltage mode VB is higher than supply voltage VS, single-phase switch element
212 will supply voltage VS and bootstrapping node NB isolation, to avoid too high bootstrap voltage mode VB recharge to supplying electricity
Pressure VS, and by other circuit damage.Increasing apparatus 210 will describe in detail below.
Fig. 3 is the circuit diagram showing the increasing apparatus according to one embodiment of the invention.As shown in figure 3, boosting
Device 300 includes electric capacity 301 and Schottky diode 302, and wherein Schottky diode 302 includes anode tap
N1 and cathode terminal N2.Anode tap N1 receives supply voltage VS, and cathode terminal N2 is coupled to bootstrapping node NB.
Compared with Fig. 2, unidirectional switch elements 212 replace with Schottky diode 302.
According to one embodiment of the invention, when floating reference node NF is coupled to earth terminal, voltage VS is big for supply
In bootstrap voltage mode VB, Schottky diode 302 turns on and so that supplying voltage VS, electric capacity 301 is charged, electric capacity
The voltage difference of 301 storages is supply voltage VS.When input voltage VIN provides via the upper bridge transistor 203 of Fig. 2
During to floating reference node NF, floating reference node VF is equal to input voltage VIN.Because electric capacity 301 stores
Voltage difference be supply voltage VS so that bootstrap voltage mode VB is supply voltage VS and input voltage VIN sum.
In order to increase the forward current to electric capacity 301 for the Schottky diode 302, the metal of Schottky diode 302 with
And the contact area of doped layer needs to increase, but after increased metal and the contact area of doped layer, Schottky two
The reverse current of pole pipe 302 increase therewith so that when bootstrap voltage mode VB be more than supply voltage VS when, Schottky two
Pole pipe 302 cannot be effectively isolated bootstrap voltage mode VB and supply voltage VS.Therefore, although Schottky diode 302
Can as the application of unidirectional switch elements 212, but the restriction due to Schottky diode 302 physical characteristics itself,
And the efficiency of Schottky diode 302 has been limited.
Fig. 4 is the circuit diagram showing increasing apparatus described according to another embodiment of the present invention.As shown in figure 4, rising
Pressure device 400 includes electric capacity 401 and matrix insulation diode 402, and wherein matrix insulation diode 402 includes sun
Extreme N1 and cathode terminal N2, wherein anode tap N1 receive supply voltage VS, and cathode terminal N2 is coupled to bootstrapping
Node NB.Compared with Fig. 2, unidirectional switch elements 212 replace with matrix insulation diode 402.
Although matrix insulation diode 402 can be provided compared with the more preferable isolation effect of Schottky diode 302, by
It is on p-type matrix in matrix insulation diode 402, when matrix insulation diode 402 forward turns on,
Supply voltage VS is provided to the forward current of electric capacity 401, and the electric current having part can run off via p-type matrix and make
Success rate is lost.
Fig. 5 is the circuit diagram showing increasing apparatus described according to another embodiment of the present invention.As shown in figure 5, rising
Pressure device 500 includes electric capacity 501 and active diode 502, and wherein active diode 502 is coupled to supply
Between voltage VS and bootstrapping node NB, and receive the control of control voltage VC.Compared with Fig. 2, unidirectional open
Close element 212 and replace with active diode 502.
According to one embodiment of the invention, active diode 502 is N-type or p-type depletion mode transistor.According to
Another embodiment of the present invention, active diode 502 is p-type or N type junction field-effect transistor.According to this
Bright other embodiment, active diode 502 be invented at present and not yet invention normally opened
(normally-ON) transistor.
Fig. 6 is the profile showing according to the normally on transistors described in one embodiment of the invention.Normally on transistors 60
For a N-type device, and include the semiconductor substrate 600 of p-type and being arranged on this semiconductor substrate 600
Epitaxial layer (epitaxial layer) 602.According to another embodiment of the present invention, normally on transistors 60 is a p-type device,
In this N-type device only in order to purposes of discussion.One grid structure 616 and an insulation are provided with epitaxial layer 602
Layer 614.Gate insulation layer 618 is disposed between grid structure 616 and field insulating layer 614.Gate insulation layer 618
One extending and covering field insulating layer 614.
Furthermore, it is respectively arranged with body region 606 and the N of p-type in the epitaxial layer 602 of the both sides of grid structure 616
The trap 604 of type.The trap 604 of N-type is disposed within semiconductor substrate 600 and both epitaxial layers 602.P-type
Contact area 608 together form the source region in body region 606 with the contact area 610 of neighbouring N-type.N
The contact area 612 of type defines the drain region in trap 604.Furthermore, it is provided with a P+ in trap 604 and mix
Miscellaneous area 632 and outside it extends to trap 604 towards body region 606.Normally on transistors 60 further includes and is stacked in P+ and mixes
A N+ doped region 630 in miscellaneous area 632.N+ doped region 630 is also arranged in trap 604 and towards body region 606
Extend to outside trap 604.In section Example, this little N+ doped region 630 can be through prolonging with P+ doped region 632
Stretch and overlap on one of body region 606, but not in contact with source area 608/610.In section Example, N+ adulterates
Outside area 630 and P+ doped region 632 may extend to trap 604 but do not overlap on body region 606.
Furthermore, normally on transistors 60 further includes electrical ties and leads with the one of N-type contact area 610 in p-type contact area 608
Electric source electrode 620.One conductive drain electrode 624 is electrical ties in N-type contact area 612.One conductive gate electrode
622 is electrical ties in grid structure 616.By the setting of interlayer dielectric layer 626 cover conductive source electrode 620,
Conductive gate electrode 622 and conductive drain electrode 624.
According to one embodiment of the invention, the active diode 502 of Fig. 5 is the normally on transistors 60 of Fig. 6, its
The conductive source electrode 620 of middle Fig. 6 is the supply voltage VS receiving Fig. 5, and conductive drain electrode 624 is coupled to
Bootstrapping node NB, and conductive gate electrode 622 is in order to receive control voltage VC.When supply voltage VS is more than certainly
When lifting voltage VB, supply voltage VS can charge to electric capacity 501 naturally, and the conducting of normally on transistors 60
Resistance can reduce because control voltage VC increases, and makes conducting resistance negligible.When bootstrap voltage mode VB is big
When supplying voltage VS, normally on transistors 60 can be not turned on according to control voltage VC, and then avoids bootstrapping electricity
Pressure VB charges to supply voltage VS.
According to one embodiment of the invention, because active diode 502 is a normally on transistors, therefore do not need partially
Pressure then can turn on.Additionally, more the forward current of active diode 502 can be controlled by adjusting control voltage VC.
When bootstrap voltage mode VB is more than supply voltage VS, active diode 502 also can according to control voltage VC not
Conducting, uses isolation supply voltage VS and bootstrapping node NB.
To be below as a example a N-type depletion mode transistor by active diode 502, in order to describe the present invention in detail.
When supplying voltage VS more than bootstrap voltage mode VB, due to the normally opened physical characteristics of N-type depletion mode transistor, work as control
When voltage VC processed is 0V, N-type depletion mode transistor will be supplied voltage VS and provide to bootstrapping node NB.With control
Voltage VC processed increases, supply voltage VS via N-type depletion mode transistor flow to the electric current of bootstrapping node NB also with
Increase.
When bootstrap voltage mode VB is more than supply voltage VS, control voltage VC is increased control voltage VC is subtracted
It is less than the limit voltage of N-type depletion mode transistor, you can be not turned on N-type depletion type crystal after going to supply voltage VS
Pipe, and then isolate supply voltage VS and bootstrapping node NB.
According to one embodiment of the invention, when supplying voltage VS more than bootstrap voltage mode VB, control voltage VC is
0V is to turn on N-type depletion mode transistor.According to another embodiment of the present invention, when supply voltage VS is less than bootstrapping
During voltage VB, control voltage VC is to supply voltage VS so that N-type depletion mode transistor is not turned on, and isolates
Supply voltage and bootstrapping node NB.
According to one embodiment of the invention, because unidirectional switch elements are depletion mode transistor and junction field effect transistor
One of pipe, therefore, it is possible to be integrated in integrated circuit, and reduces the purpose of production cost.And, due to consumption
The physical characteristics of most transistor npn npn and junction field effect transistor are so that designer can be using control voltage VC
Effectively control the reverse leakage current of unidirectional switch elements it is also possible to control using control voltage VC when forward turning on
The current driving ability of unidirectional switch elements processed.
Fig. 7 is the circuit diagram of the upper bridge driver showing the Fig. 2 according to one embodiment of the invention.As Fig. 7
Shown, upper bridge driver 700 includes the first P-type transistor 701 and the first N-type transistor 702.First P
The source terminal of transistor npn npn 701 is coupled to bootstrapping node NB, the upper bridge output signal SHO of drain electrode end output, gate terminal
Bridge drive signal SHD in reception.The source terminal of the first N-type transistor 702 is coupled to floating reference node NF, leakage
Extreme output above bridge output signal SHO, gate terminal receives upper bridge drive signal SHD.
Fig. 8 is the circuit diagram of the lower bridge driver showing the Fig. 2 according to one embodiment of the invention.As Fig. 8
Shown, lower bridge driver 800 includes the second P-type transistor 801 and the second N-type transistor 802.2nd P
The source terminal of transistor npn npn 801 receives supply voltage VS, the lower bridge output signal SLO of drain electrode end output, and grid terminates
Accept bridge drive signal SLD.The source terminal of the second N-type transistor 802 is coupled to earth terminal, under drain electrode end output
Bridge output signal SLO, gate terminal receives lower bridge drive signal SLD.
The feature of many embodiments described above, makes those of ordinary skill in the art clearly understood that this
The form of description.Those of ordinary skill in the art is it will be appreciated that its available disclosure of the present invention is
Basis completes to be same as the purpose of above-described embodiment and/or reach and is same as to design or change other techniques and structure
The advantage of above-described embodiment.Those of ordinary skill in the art is also it will be appreciated that spirit without departing from the present invention
Can arbitrarily change without departing from the spirit and scope of the present invention, substitute and retouching with the equivalent constructions of scope.
Claims (16)
1. a kind of switch type converter is it is characterised in that described switch type converter includes：
Bridge driver on one, receives bootstrapping one bootstrap voltage mode of node and a floating reference of a floating reference node
Voltage, and produce bridge output signal on；
Bridge transistor on one, according to described upper bridge output signal, an input voltage is provided to described floating reference node；
Bridge driver once, produces bridge output signal；
Bridge transistor once, according to described lower bridge output signal, described floating reference node is coupled to an earth terminal；
One electric capacity, is coupled between described bootstrapping node and described floating reference node；And
One active diode, a supply voltage is provided to described bootstrapping node, wherein when described bootstrap voltage mode is higher than
During described supply voltage, described single-phase switch element, according to a control voltage, described supply voltage and described bootstrapping is saved
Point isolation.
2. switch type converter according to claim 1 is it is characterised in that described switch type converter more wraps
Include：
One control logic, receives described supply voltage, and it is extremely described to produce bridge drive signal on according to an input signal
Upper bridge driver and once bridge drive signal are to described lower bridge driver.
3. switch type converter according to claim 2 is it is characterised in that described upper bridge driver further includes：
One first P-type transistor, source terminal is coupled to described bootstrapping node, and drain electrode end produces described upper bridge output signal,
Gate terminal receives described upper bridge drive signal；And
One first N-type transistor, source terminal is coupled to described floating reference node, and it is defeated that drain electrode end produces described upper bridge
Go out signal, gate terminal receives described upper bridge drive signal.
4. switch type converter according to claim 2 is it is characterised in that described lower bridge driver further includes：
One second P-type transistor, source terminal receives described supply voltage, and drain electrode end produces described lower bridge output signal,
Gate terminal receives described lower bridge drive signal；And
One second N-type transistor, source terminal is coupled to described earth terminal, and drain electrode end produces described lower bridge output signal,
Gate terminal receives described lower bridge drive signal.
5. switch type converter according to claim 1 is it is characterised in that described active diode is one
Normally on transistors, wherein when described floating reference node is coupled to described earth terminal, described normally on transistors is according to institute
State control voltage, determine described supply voltage to a forward current of described electric capacity so that an electricity of described electric capacity storage
Pressure reduction, wherein when described input voltage is provided to described floating reference node, described bootstrap voltage mode is described input electricity
Pressure and described voltage difference sum, described normally on transistors more according to described control voltage, by described supply voltage and
Described primary nodal point isolation.
6. switch type converter according to claim 1 is it is characterised in that described active diode is one
N-type depletion mode transistor.
7. switch type converter according to claim 1 is it is characterised in that described active diode is one
P-type depletion mode transistor.
8. switch type converter according to claim 1 is it is characterised in that described active diode is one
N type junction field-effect transistor.
9. switch type converter according to claim 1 is it is characterised in that described active diode is one
P-type junction field effect transistor.
10. a kind of increasing apparatus are it is characterised in that described increasing apparatus include：
One electric capacity, including a primary nodal point and a secondary nodal point, wherein said secondary nodal point alternately receives one first
Voltage and a second voltage；And
One active diode, a supply voltage is provided to described primary nodal point, and will be described according to a control voltage
Primary nodal point is less than described second voltage with described supply voltage isolation, wherein said supply voltage, and described supply electricity
Pressure is more than described first voltage.
11. increasing apparatus according to claim 10 are it is characterised in that described active diode is normal for one
Open transistor, wherein
When described secondary nodal point receives described first voltage, described normally on transistors provides described supply voltage to institute
State primary nodal point, in order to charge to described electric capacity, wherein
When described secondary nodal point receives described second voltage, described normally on transistors will be described according to described control voltage
Supply voltage and the isolation of described primary nodal point.
12. increasing apparatus according to claim 11 are described in it is characterised in that receive when described secondary nodal point
During first voltage, described normally on transistors, according to described control voltage, determines described supply voltage to described electric capacity one
Forward current so that described electric capacity storage a voltage difference, wherein when described secondary nodal point is coupled to described second voltage
When, the voltage of described primary nodal point is described second voltage and described voltage difference sum, described normally on transistors more root
According to described control voltage, by described supply voltage and the isolation of described primary nodal point, it is to avoid described electric capacity is to described supply
Tension discharge, wherein said voltage difference is that described supply voltage deducts described first voltage.
13. increasing apparatus according to claim 10 are it is characterised in that described active diode is a N
Type depletion mode transistor.
14. increasing apparatus according to claim 10 are it is characterised in that described active diode is a P
Type depletion mode transistor.
15. increasing apparatus according to claim 10 are it is characterised in that described active diode is a N
Type junction field effect transistor.
16. increasing apparatus according to claim 10 are it is characterised in that described active diode is a P
Type junction field effect transistor.
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| CN201510545990.1A CN106487220B (en) | 2015-08-31 | 2015-08-31 | Switch type converter and increasing apparatus |
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| CN201510545990.1A CN106487220B (en) | 2015-08-31 | 2015-08-31 | Switch type converter and increasing apparatus |
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| CN106487220B CN106487220B (en) | 2019-05-21 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108306489A (en) * | 2018-01-26 | 2018-07-20 | 成都芯源系统有限公司 | Drive circuit, control circuit and drive method of buck-boost switching converter |
| CN111082786A (en) * | 2018-10-22 | 2020-04-28 | 台达电子工业股份有限公司 | Power circuit and drive circuit |
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| CN202150796U (en) * | 2010-06-07 | 2012-02-22 | 罗姆股份有限公司 | Boost DC/DC converter and electronic equipment having the converter |
| CN102904565A (en) * | 2012-10-09 | 2013-01-30 | 长安大学 | Level shift circuit for DC-DC (Direct Current) driven ultra-low static current |
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| WO2001052396A2 (en) * | 2000-01-14 | 2001-07-19 | Infineon Technologies Ag | Circuit arrangement for applying a supply voltage to a load |
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| CN101232241A (en) * | 2006-11-29 | 2008-07-30 | 通用电气公司 | Current fed power converter system including normally open switch |
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| TW200845544A (en) * | 2007-05-08 | 2008-11-16 | Richtek Technology Corp | Charging circuit for bootstrap capacitor and integrated driver circuit using same |
| CN202150796U (en) * | 2010-06-07 | 2012-02-22 | 罗姆股份有限公司 | Boost DC/DC converter and electronic equipment having the converter |
| CN102904565A (en) * | 2012-10-09 | 2013-01-30 | 长安大学 | Level shift circuit for DC-DC (Direct Current) driven ultra-low static current |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108306489A (en) * | 2018-01-26 | 2018-07-20 | 成都芯源系统有限公司 | Drive circuit, control circuit and drive method of buck-boost switching converter |
| CN108306489B (en) * | 2018-01-26 | 2020-04-21 | 成都芯源系统有限公司 | Drive circuit, control circuit and drive method of buck-boost switching converter |
| CN111082786A (en) * | 2018-10-22 | 2020-04-28 | 台达电子工业股份有限公司 | Power circuit and drive circuit |
| CN111082786B (en) * | 2018-10-22 | 2024-03-29 | 碇基半导体股份有限公司 | Power circuit and driving circuit |
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| Publication number | Publication date |
|---|---|
| CN106487220B (en) | 2019-05-21 |
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