CN105703756A - Photovoltaic-application-based NEXFET bypass switch - Google Patents
Photovoltaic-application-based NEXFET bypass switch Download PDFInfo
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- CN105703756A CN105703756A CN201610171548.1A CN201610171548A CN105703756A CN 105703756 A CN105703756 A CN 105703756A CN 201610171548 A CN201610171548 A CN 201610171548A CN 105703756 A CN105703756 A CN 105703756A
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- 239000003990 capacitor Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 2
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 230000001413 cellular effect Effects 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 7
- 230000024241 parasitism Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Semiconductor Integrated Circuits (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
Disclosed in the invention is a photovoltaic-application-based NEXFET bypass switch formed by an N-channel NEXFET having an ultra-low conduction drop, a drive control module, and a capacitor. The NEXFET serves as a core part. A C+ terminal of the drive control module is connected with a positive terminal of the capacitor, a G terminal is connected with a grid electrode of the NEXFET, a D- terminal is connected an anode of the NEXFET, and a D+ terminal is connected with a cathode of the NEXFET. The circuit has a bypass switch capacity. The basic working principle of the bypass switch is similar to that of a Schottky diode; the capacitor and the drive control module are used for realizing drive controlling of the NEXFET; and a power NEXFET device is used as a bypass switch of a photovoltaic battery cell. When a hotspot occurs in the photovoltaic battery cell, a current flows through the bypass switch without any blocking; and the bypass switch does not work under the normal situation. According to the invention, the bypass diode has the ultra low conduction drop; the reverse leakage current and the power consumption are extremely low; the temperature characteristic is better; the service life is prolonged; and characteristics are stable.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to semiconductor device and manufacturing process, especially design a kind of NEXFET by-pass switch based on photovoltaic application。
Background technology
Along with the extensive use of solar energy, the solar energy related industry such as photovoltaic cell quickly grows。Wherein photovoltaic panel is made up of a series of photovoltaic cell cellular exactly。At optimum conditions, all same irradiation of all of cell and act on same levels of current。But, some battery cellulars there may be partial phantom or fuzzy under normal operation。Comparing these shade cellulars restriction electric current to produce with complete irradiation cellular, in extreme situations, these cellulars are completely obscured, and electric current is blocked。Shade cellular is just as a load in this case, and the electric current that irradiation cellular produces causes that overvoltage produces, and its value fully achieves breakdown threshold。This phenomenon is referred to as one " focus ", can cause the overheated of shade cellular, and in some cases, even permanent damage causes electric leakage。In order to prevent the appearance of focus, therefore, bypass diode is connected in parallel in cellular, it is possible to solve this situation well, such as Fig. 1。Provided by the present invention is exactly a kind of by-pass switch based on photovoltaic application。
Summary of the invention
The present invention proposes a kind of extremely low forward conduction voltage drop that has, less reverse leakage current, less power consumption, the NEXFET by-pass switch of longer life-span and more stable characteristic。
For achieving the above object, the invention provides a circuit structure being made up of the NEXFET of 1 N-channel, a drive control module and an electric capacity C1, electric capacity C1 and drive circuit and control the gate-drive of NEXFET, this circuit has the effect of by-pass switch。Described structure fabrication, on one block of n-type monocrystal silicon, both can be fully integrated together circuit, it is also possible to realizes individually connecting。NEXFET as core, a parasitic diode in parallel between its anode with negative electrode；The C+ termination capacitor C1 anode of described drive control module, C-termination capacitor C1 negative terminal, G connects NEXFET grid level, and D-connects NEXFET anode, and D+ connects NEXFET cathode, constitutes the whole circuit structure of the present invention, referring specifically to Fig. 3。
The most important part of the present invention is that the feature of the NEXFET utilizing circuit driven to control is to replace Schottky diode to realize by-pass switch。NEXFET is possible not only to quality factor (Qg*Ron) improving more than twice compared with trench-MOS, the diode of its parasitism can also by the breakdown voltage of the drain-source pressure drop clamper of LDMOS to diode, and avalanche breakdown event would not occur in such LDMOS。
The operation principle of the present invention is: its operation principle is similar to Schottky diode, by-pass switch as photovoltaic cell cellular, when there is focus in photovoltaic cell cellular, electric current will flow through without blocking through by-pass switch, and when Everything is fine for photovoltaic cell, by-pass switch will not work, and is off state。When electric current flows through by-pass switch, first NEXFET is off state, electric current flows through the diode of parasitism, agitator is started working, electric charge pump is coordinated parasitic diode pressure boosting to be charged to electric capacity, be charged to comparator preset high value time complete charging, the pressure drop of this stage by-pass switch is about the pressure drop of a general-purpose diode。After the electric capacity charging stage completes, driving module is started working, the enable signal of comparator output turns off electric charge pump, electric charge on electric capacity reaches, until voltage on electric capacity C1, the low level value that comparator is preset for driving NEXFET, NEXFET conducting forms low impedance path, and the electric current overwhelming majority flows through NEXFET。The pressure drop of this stage by-pass switch is about the conduction voltage drop of NEXFET, and owing to the dutycycle of charging stage is little, average conduction voltage drop is very low。
Described drive control module includes single-chip processor CMP, driver, electric charge pump and agitator OSC；Described agitator OSC is constituted current reference to described electric capacity C1 charging by two PMOS, two NMOS and a resistance, can work at lower voltages；Described electric charge pump is made up of several charge of the electron series connections of pumps, charge of the electron pump circuit inside configuration contains two electric capacity C2 and C3, the negative terminal of two electric capacity C2 and C3 connects two anti-phase oscillator signals respectively, two electric capacity of height according to LO signal level are alternately accomplished two work process respectively: 1, electric capacity C2 and C3 negativing ending grounding, electric capacity C2 and C3 anode charge to input voltage vin；2, electric capacity C2 and C3 negative terminal connect high level, and owing to electric capacity C2 and C3 two ends pressure reduction are constant, electric capacity C2 and C3 anode voltage pump rise export, and are risen by relatively low body diode input voltage pump and charge to external capacitor C1。
Oscillator circuit structure in described driving module makes under the low input that this agitator can be operated in 0.6V, and frequency of oscillation is affected less by supply voltage。Agitator is by being constituted current reference charged to electric capacity by 2 PMOS and 2 NMOS and 1 resistance, when electric capacity charges to certain potentials, sluggishness phase inverter starts output low level, charging current is reduced and discharge tube starts electric discharge, voltage on electric capacity starts to reduce, process is started to charge up, it is achieved vibration after being discharged to electronegative potential。
The manufacture method of further NEXFET by-pass switch: mainly include silicon chip and prepare-P type outer layer growth active area photoetching n+ and deeply tie diffusion n-district injection grid oxide layer growth polycrystal etching p-type and inject p+ type and inject that n+ type injects contact hole etching Metal deposition, prepared by etching alloy passivation anneal processing steps。The gate medium of described NEXFET is selected from SiO2、Si3N4、Al2O3、La2O3、HfO2Or ZrO2One of which medium in high K medium。Described NEXFET by-pass switch can adopt the semi-conducting materials such as body silicon, carborundum, GaAs, indium phosphide and germanium silicon, and one of them makes。
Advantages of the present invention: NEXFET is possible not only to quality factor (Qg*Ron) improve more than twice compared with trench-MOS, the diode of its parasitism can also by the breakdown voltage of the drain-source pressure drop clamper of LDMOS to diode, would not there is avalanche breakdown event in such LDMOS, make it have extremely low conduction voltage drop, less reverse leakage current, less power consumption, better temperature characterisitic, longer life-span and more stable characteristic。Its performance is far superior to the by-pass switch of the now schottky diode array of current domestic use。
Accompanying drawing explanation
Fig. 1 is the photovoltaic application of the NEXFET by-pass switch of the present invention；
Fig. 2 is the NEXFET basic structure of the present invention；
Fig. 3 is the connection figure of the NEXFET by-pass switch of the present invention；
The NEXFET that Fig. 4 is the present invention drives module principle figure；
Fig. 5 is the application principle figure of the present invention；
Fig. 6 is the circuit diagram of the electric charge pump of the present invention；
Fig. 7 is the circuit diagram of the agitator of the present invention。
Detailed description of the invention
Below in conjunction with drawings and Examples, the invention will be further described, but should not be construed the above-mentioned subject area of the present invention and be only limitted to following embodiment。Without departing from the idea case in the present invention described above, according to ordinary skill knowledge and customary means, make various replacement and change, all should include in protection scope of the present invention。
Below by technique, technical scheme is described in further detail。
The invention provides a circuit structure being made up of the NEXFET of 1 N-channel, a drive control module and an electric capacity, electric capacity and drive circuit and control the gate-drive of NEXFET, this circuit has the effect of by-pass switch。Described structure fabrication, on one block of n-type monocrystal silicon, both can be fully integrated together circuit, it is also possible to realizing individually connecting, circuit connects referring to Fig. 3。NEXFET as core, a diode in parallel between its anode with negative electrode；The C+ termination capacitor anode of described drive control module, C-termination capacitor negative terminal, G terminates NEXFET grid level, and D-terminates NEXFET anode, and D+ terminates NEXFET cathode, constitutes the whole circuit structure of the present invention。
In described circuit, the NEXFET element of N-channel is prepared P type outer layer growth active area photoetching n+ mainly through n+ silicon chip and is deeply tied diffusion n-district injection grid oxide layer growth polycrystal etching p-type and inject p+ type and inject n+ type and inject the processing step such as contact hole etching Metal deposition, etching alloy passivation annealing and prepare。The NEXFET component structure of the N-channel after preparing is referring to Fig. 2。
In the present embodiment, the NEXFET element gate medium of N-channel is preferably SiO2High K medium, NEXFET by-pass switch preferably employs body silicon。In embodiment, all electronic devices are preferably integrated on same silicon chip by each electronic device of NEXFET by-pass switch, referring specifically to Fig. 3。
Described drive control module internal circuit configuration is referring to Fig. 4, including single-chip processor CMP, driver, electric charge pump and agitator OSC。Described agitator OSC is constituted current reference to described electric capacity C1 charging by two PMOS, two NMOS and a resistance, can work at lower voltages。Described electric charge pump is made up of several charge of the electron series connections of pumps, charge of the electron pump circuit structure is as shown in Figure 6: it is internal containing electric capacity C2 and electric capacity C3, two electric capacity negative terminals connect two anti-phase oscillator signals respectively, two electric capacity of height according to LO signal level are alternately accomplished two work process respectively: 1, electric capacity C2 and electric capacity C3 negativing ending grounding, electric capacity C2 and electric capacity C3 anode charge to input voltage vin；2, electric capacity C2 and electric capacity C3 negative terminal connect high level, and owing to electric capacity two ends pressure reduction is constant, electric capacity C2 and electric capacity C3 anode voltage pump rise export, and are risen by relatively low body diode input voltage pump and charge to external capacitor C1。
As shown in Figure 5, by-pass switch as photovoltaic cell cellular, when there is focus in photovoltaic cell cellular, electric current will flow through without blocking through by-pass switch, and when Everything is fine for photovoltaic cell, by-pass switch will not work, being off state, when by-pass switch adopts schottky diode array, its conduction voltage drop is at least on 200mV, leakage current is very big, pressure also relatively small。When adopting the by-pass switch of the present invention, when electric current flows through by-pass switch, first NEXFET is off state, electric current flows through diode, agitator is started working, coordinate electric charge pump by diode pressure boosting to electric capacity charge, be charged to comparator preset high value time complete charging, the pressure drop of this stage by-pass switch is about the pressure drop of a general-purpose diode。After the electric capacity charging stage completes, driving module is started working, the enable signal of comparator output turns off electric charge pump, electric charge on electric capacity reaches, until voltage on electric capacity, the low level value that comparator is preset for driving NEXFET, NEXFET conducting forms low impedance path, and the electric current overwhelming majority flows through NEXFET。The pressure drop of this stage by-pass switch is about the conduction voltage drop of NEXFET, and owing to the dutycycle of charging stage is little, average conduction voltage drop is extremely low, and emulation draws when current capacity is 8A, and conduction voltage drop can be accomplished less than 60mV, leakage current two orders of magnitude of decline。And NEXFET is possible not only to improve quality factor (Qg*Ron) compared with trench-MOS more than twice, the diode of its parasitism can also by the breakdown voltage of the drain-source pressure drop clamper of LDMOS to diode, and avalanche breakdown event would not occur in such LDMOS。It is greatly improved chip stability and life-span。
Oscillator circuit structure in described driving module is as it is shown in fig. 7, this agitator can be operated under the low input of 0.6V, and frequency of oscillation is affected less by supply voltage。Agitator is by being constituted current reference charged to electric capacity C1 by 2 PMOS and 2 NMOS and 1 resistance, when electric capacity C1 charges to certain potentials, sluggishness phase inverter starts output low level, charging current is reduced and discharge tube starts electric discharge, voltage on electric capacity C1 starts to reduce, process is started to charge up, it is achieved vibration after being discharged to electronegative potential。
It should be noted that the central inventive point of the present invention is in that the by-pass switch with NEXFET composition, the preparation technology of the present invention has multiple change, both its additional circuits can be integrated in inside chip piece, and can individually connect again。The preparation method provided in the present invention is only a kind of approach realizing this circuit structure; the present invention can not list ownership Preparation Method one by one also without necessity; but skilled artisan would appreciate that various structures made on the basis of the present invention or technologic change, all within the scope of the present patent application protection。
Claims (4)
1. the NEXFET by-pass switch based on photovoltaic application, it is characterised in that: what include 1 N-channel has the NEXFET of ultralow conduction voltage drop, a drive control module and an electric capacity C1；Described NEXFET is core, the C+ termination capacitor C1 anode of described drive control module, C-termination capacitor C1 negative terminal, and G terminates NEXFET grid level, and D-terminates NEXFET anode, and D+ terminates NEXFET cathode。
2. a kind of NEXFET by-pass switch based on photovoltaic application according to claim 1, it is characterised in that: described drive control module includes single-chip processor CMP, driver, electric charge pump and agitator OSC；Described electric charge pump is made up of the charge of the electron pump of some series connection, and charge of the electron pump circuit inside configuration includes two electric capacity C2 and electric capacity C3, and wherein electric capacity C2 and electric capacity C3 negative terminal connect two anti-phase oscillator signals respectively。
3. a kind of NEXFET by-pass switch based on photovoltaic application according to claim 1, it is characterized in that: each electronic device of the NEXFET of NEXFET by-pass switch, drive control module and electric capacity can be discrete device, can also be that all electronic devices of NEXFET, drive control module and electric capacity are integrated into on a piece of silicon chip, or the independent device of NEXFET, drive control module and electric capacity are integrated on one chip。
4. a kind of NEXFET by-pass switch based on photovoltaic application according to claim 1, it is characterised in that: the manufacture method of described NEXFET by-pass switch；Mainly include silicon chip to prepare P type outer layer growth active area photoetching n+ and deeply tie diffusion n-district injection grid oxide layer growth polycrystal etching p-type and inject p+ type and inject that n+ type injects contact hole etching Metal deposition, prepared by etching alloy passivation anneal processing steps；The gate medium of described NEXFET is selected from SiO2、Si3N4、Al2O3、La2O3、HfO2Or ZrO2One of which medium in high K medium；Described NEXFET by-pass switch can adopt any material in the semi-conducting materials such as body silicon, carborundum, GaAs, indium phosphide and germanium silicon to be made。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610171548.1A CN105703756B (en) | 2016-03-24 | 2016-03-24 | A kind of NEXFET by-pass switch based on photovoltaic application |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610171548.1A CN105703756B (en) | 2016-03-24 | 2016-03-24 | A kind of NEXFET by-pass switch based on photovoltaic application |
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| Publication Number | Publication Date |
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| CN105703756A true CN105703756A (en) | 2016-06-22 |
| CN105703756B CN105703756B (en) | 2019-04-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947637A (en) * | 2017-06-22 | 2018-04-20 | 重庆大学 | Energy collecting device based on semiconductor temperature differential generating |
| CN111565022A (en) * | 2020-07-15 | 2020-08-21 | 上海南麟电子股份有限公司 | Multi-stage series power generation unit group and bypass protection circuit thereof |
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| US20070186969A1 (en) * | 2006-02-14 | 2007-08-16 | Diehl Ako Stiftung & Co. Kg | Photovoltaic system having a solar module |
| CN103208916A (en) * | 2012-01-11 | 2013-07-17 | 太阳能安吉科技有限公司 | Photovoltaic Module |
| CN103227588A (en) * | 2012-01-30 | 2013-07-31 | 太阳能安吉科技有限公司 | Photovoltaic panel circuitry |
| CN103904616A (en) * | 2014-04-15 | 2014-07-02 | 南京安珈源电子有限公司 | Hot spot current protective device of photovoltaic module |
| CN104025406A (en) * | 2011-12-19 | 2014-09-03 | Sma太阳能技术股份公司 | Circuit arrangement for suppressing an arc occurring over a contact gap of a switching member |
-
2016
- 2016-03-24 CN CN201610171548.1A patent/CN105703756B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070186969A1 (en) * | 2006-02-14 | 2007-08-16 | Diehl Ako Stiftung & Co. Kg | Photovoltaic system having a solar module |
| CN104025406A (en) * | 2011-12-19 | 2014-09-03 | Sma太阳能技术股份公司 | Circuit arrangement for suppressing an arc occurring over a contact gap of a switching member |
| CN103208916A (en) * | 2012-01-11 | 2013-07-17 | 太阳能安吉科技有限公司 | Photovoltaic Module |
| CN103227588A (en) * | 2012-01-30 | 2013-07-31 | 太阳能安吉科技有限公司 | Photovoltaic panel circuitry |
| CN103904616A (en) * | 2014-04-15 | 2014-07-02 | 南京安珈源电子有限公司 | Hot spot current protective device of photovoltaic module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947637A (en) * | 2017-06-22 | 2018-04-20 | 重庆大学 | Energy collecting device based on semiconductor temperature differential generating |
| CN111565022A (en) * | 2020-07-15 | 2020-08-21 | 上海南麟电子股份有限公司 | Multi-stage series power generation unit group and bypass protection circuit thereof |
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| Publication number | Publication date |
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| CN105703756B (en) | 2019-04-12 |
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