CN107947637A - Energy collecting device based on semiconductor temperature differential generating - Google Patents
Energy collecting device based on semiconductor temperature differential generating Download PDFInfo
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- CN107947637A CN107947637A CN201710483000.5A CN201710483000A CN107947637A CN 107947637 A CN107947637 A CN 107947637A CN 201710483000 A CN201710483000 A CN 201710483000A CN 107947637 A CN107947637 A CN 107947637A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 238000003860 storage Methods 0.000 claims abstract description 48
- 230000005611 electricity Effects 0.000 claims abstract description 27
- 230000001360 synchronised effect Effects 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 6
- 238000004146 energy storage Methods 0.000 description 6
- 238000010248 power generation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005138 cryopreservation Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009510 drug design Methods 0.000 description 1
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- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
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- 230000006641 stabilisation Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/002—Generators
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Abstract
The present invention provides a kind of energy collecting device based on semiconductor temperature differential generating, including advance collection semiconductor power generator to send the energy pre-storage capacitance of electric energy, control circuit, booster circuit and the apparatus for storing electrical energy to wireless senser power supply for controlling booster circuit to run and stop.The present invention is suitable for the collection of energy that output voltage is 1-3.3V temperature difference electricity generation devices, the energy that can be exported semiconductor thermo-electric generation apparatus to high efficient and reliable after boosting to 3.3V by being stored in apparatus for storing electrical energy, so as to make it be run under the voltage of 3.3V for wireless senser power supply.
Description
Technical field
The invention belongs to semiconductor temperature differential generating field, may be directly applied to send out semiconductor temperature difference more particularly to one kind
The energy collecting device that electric piece output electric energy is collected, stores and can power to wireless senser.
Background technology
In industrial 4.0 epoch, the application field of wireless senser is more and more wider, in the scheme powered for its operation, from
The scheme of power supply has highlighted its superiority, due to the increase of network node quantitatively and reduction dimensionally, to power supply
Volume, service life and energy density require more and more stringenter, traditionally remote wireless sensors are surveyed by battery powered always
Simultaneously data, this mode reliable operation is sent wirelessly in amount data, but the probable life of battery is generally 3-5, is having
It is difficult to replace battery in a little applications, and replaces battery high cost, accordingly it is desirable to which the self-powered of sensor can be realized.
And thermo-electric generation mainly utilizes pyroelectric effect, the conversion between thermal energy and electric energy is realized by thermo-electric converting material.In nature
In manual system, temperature gradient and hot-fluid are ubiquitous, this provides condition to be converted into electric flux using thermal energy.The temperature difference is to have
The energy conversion of effect provides potential, and hot-fluid then provides power.Although the power extracted from thermal energy is very low, for nothing
Low power consuming devices as line sensor, it is practicable to be powered by thermoelectric energy collection.Meanwhile using equipment and
The temperature difference between environment, which produces electricl energy, makes wireless senser realize self-powered, the heat that can produce operational outfit in manual system
Amount efficiently uses, so as to improve energy utilization rate, improves energy resource structure, it is seen that semiconductor temperature differential generating technology is one
The new environmentally protective generation technology of kind.However, in existing semiconductor temperature differential generating controller technology and method, it is few
For the output collection of energy of 2.0V and following semiconductor temperature differential generating.
The content of the invention
The technical problem to be solved by the present invention is to provide a kind of energy collecting device based on semiconductor temperature differential generating, it is therefore an objective to
To overcome semiconductor temperature differential generating technology to be at this stage applied in wireless senser power supply, in the temperature difference by application environment, sky
Between and in by semiconductor power generation process radiating efficiency etc. generate electricity when being limited output voltage and power it is relatively low and be unfavorable for
The problem of collection of energy, by the rational design based on control circuit, with reference to the control of low input synchronous pressure-boosting converter
Characteristic, the low-voltage electric energy that semiconductor temperature differential generating piece is exported carry out boosting change using low input synchronous pressure-boosting converter
After changing, it is stored in apparatus for storing electrical energy, so as to power for the DATA REASONING and data transfer of wireless senser.
To realize that the technical solution that the object of the invention uses is a kind of such, energy based on semiconductor temperature differential generating
Collection device, including energy pre-storage capacitance C8, control circuit and booster circuit；
The both ends of the energy pre-storage capacitance C8 are connected with the output terminal of power generator；The power generator is semiconductor
Temperature difference electricity generation device.The device is generated electricity using the temperature difference between heat-producing device and environment.The energy pre-storage capacitance C8 is just
Negative polarity end connects the positive-negative polarity end of semi-conductor thermo-electric generation module output respectively, for collecting the electricity that power generator is sent in advance
Energy.
Gather energy pre-storage capacitance both end voltage size using as produce control signal trigger voltage threshold value, control circuit
Output terminal is connected with the enabled control terminal of booster circuit, for controlling the work of booster circuit and stopping.The control circuit bag
Include first order bleeder circuit, second level bleeder circuit and third level bleeder circuit；The first order bleeder circuit can including one
Adjust potentiometer R6；The second level bleeder circuit includes metal-oxide-semiconductor Q1 and resistance R7；The third level bleeder circuit includes metal-oxide-semiconductor
Q2, resistance R8 and capacitance C7；The energy pre-storage capacitance C8 is in parallel with the resistive element of adjustable potentiometer R6；The adjustable potentiometer R6
Current potential output pin draw the grid of connection metal-oxide-semiconductor Q1；The source electrode of the metal-oxide-semiconductor Q1, the negative polarity end of energy pre-storage capacitance C8 and electricity
Hinder one end common ground connection of R8；The other end connection of resistance R8 includes the drain electrode of metal-oxide-semiconductor Q2；Capacitance C7 is connected in parallel on the two of resistance R8
End；The drain electrode of the grid connection metal-oxide-semiconductor Q1 of metal-oxide-semiconductor Q2；After the drain series resistance R7 of metal-oxide-semiconductor Q1, energy pre-storage capacitance C8 is connected
Positive ends and metal-oxide-semiconductor Q2 source electrode；
The booster circuit further includes resistance R1, electricity using low input synchronous pressure-boosting converter TPS61200 as core
Hinder R2, resistance R3, resistance R4, resistance R5, capacitance C1, capacitance C2, capacitance C3, capacitance C4, capacitance C5, capacitance C6 and inductance L1 structures
Into peripheral circuit；
After the L pin serial connection inductance L1 of TPS61200, the positive ends of connection energy pre-storage capacitance C8；The VIN of TPS61200
Pin separates three tunnels, is grounded after first via series capacitance C2, the second tunnel is sequentially connected in series ground connection, the 3rd tunnel after resistance R2 and resistance R3
It is grounded after being sequentially connected in series resistance R1 and capacitance C1；The positive ends of energy pre-storage capacitance C8 are connected between resistance R1 and capacitance C1；
The PS pins connection VIN pins of TPS61200；Between the UVLO pins connection resistance R2 and resistance R3 of TPS61200；TPS61200
EN pins connection metal-oxide-semiconductor Q2 drain electrode；The PWPD pins ground connection of TPS61200；Four tunnels of VOUT extractions of TPS61200, first
FB pins are connected after the series capacitance C4 of road, the second tunnel is grounded after being sequentially connected in series resistance R4 and resistance R5, the 3rd tunnel series capacitance C5
After be grounded, be grounded after the 4th tunnel series capacitance C6, capacitance C5 and capacitance C6 are common ground connections；The PGND pins of TPS61200 connect
Ground；It is grounded after the VAUX pin serial connection capacitances C3 of TPS61200；The FB pins of TPS61200 be connected to resistance R4 and resistance R5 it
Between；The GND pin ground connection of TPS61200.
What deserves to be explained is during the collection of electric energy, semiconductor thermo-electric generation apparatus is sent out by energy pre-storage capacitance C8
The electric energy gone out is collected in advance, until the magnitude of voltage at energy pre-storage capacitance C8 both ends reaches control circuit and produces control signal condition
Trigger voltage threshold value when, the magnitude of voltage at energy pre-storage capacitance C8 both ends produces control signal after control circuit is handled, and then touches
Hair booster circuit starts and runs, and booster circuit is stored into electric energy and stores up after the low-voltage electric energy in energy pre-storage capacitance C8 is boosted
In cryopreservation device.
Compared to the prior art, the present invention adds energy pre-storage capacitance in control circuit, due to semiconductor temperature differential generating
The reason for piece itself and the limitation of external radiating device efficiency, the open-circuit voltage and short circuit current flow when under the conditions of Low Temperature Difference are equal
Very little, carrying load ability are weak, it is impossible to and start and keep booster circuit to work normally, and the temperature difference fluctuation between equipment and environment
Power generator output can be caused unstable, one super capacitor of addition can be defeated to semiconductor power generation device as energy pre-storage capacitance
The electric energy that goes out carries out advance collection, and then ensures when booster circuit starts, from energy pre-storage capacitance directly to booster circuit into
Row energy input, due to super capacitor in charging equivalent to power generator output short-circuit, carrying load ability is very strong during electric discharge, institute
Can either ensure that most energy of power generator output are collected into energy pre-storage capacitance, and can guarantee that in booster circuit
The energy of stabilization can be provided in the course of work for it；And the voltage at energy pre-storage capacitance both ends directly reacts the big of its energy storage capacity
It is small, the trigger voltage threshold value of control signal can be then produced directly using its both end voltage value as control circuit, when its both ends
When magnitude of voltage is increased to a predetermined trigger voltage value, control circuit triggering booster circuit normally starts and works, and will store up in advance
Electric energy in energy capacitance rises to 3.3V and charges for apparatus for storing electrical energy；Meanwhile as booster circuit worked after a period of time, pre- storage
The energy storage capacity of energy capacitance is reduced, and voltage reduces, and is insufficient to allow control circuit to produce the generation control signal that is triggered, and then boosting electricity
Road is stopped, and realizes the intermittent charging of circuit, is circulated according to this process, and then semiconductor thermo-electric generation apparatus is sent
Electric energy be effectively collected into apparatus for storing electrical energy.
More specifically：
Energy pre-storage capacitance is a ultracapacitor, has very big capacitance, energy pre-storage capacitance and power generator are direct
It is connected；This programme is limited and cause carrying load ability insufficient for solving power generator in Low Temperature Difference and issuing electricity output ability, no
The problem of booster circuit being triggered as normal, access ultracapacitor collect electric energy in advance, power generation dress during this
Put to energy pre-storage capacitance and charge, equivalent to power generator output short-circuit, when its both end voltage reaches an energy trigger control circuit
When producing the value of control signal, control circuit, which produces control signal and starts booster circuit, simultaneously enters normal work, pre- during this
The storage capacitor DC power supply strong equivalent to a carrying load ability, so both can guarantee that what semiconductor thermo-electric generation apparatus was sent
Most energy can be collected into energy pre-storage capacitance in advance, and can guarantee that booster circuit can be activated and remain normal
Work.
Control circuit is made of three-level bleeder circuit, and first order bleeder circuit is made of adjustable potentiometer, the output of its current potential
The grid of the metal-oxide-semiconductor for the second level bleeder circuit that end connection is made of resistance and metal-oxide-semiconductor, the source electrode connection energy pre-storage electricity of metal-oxide-semiconductor
The negative polarity end of appearance, drain the positive ends through resistance connection energy pre-storage capacitance, the 3rd be made of resistance, capacitance and metal-oxide-semiconductor
The current potential output terminal of the grid connection second level bleeder circuit of the metal-oxide-semiconductor of level bleeder circuit, the source electrode connection energy pre-storage electricity of metal-oxide-semiconductor
The positive ends of appearance, drain and the negative polarity end of energy pre-storage capacitance are connect through resistance；In order to be collected into certain energy in energy pre-storage capacitance
When produce control signal, since the magnitude of voltage at capacitance both ends directly reacts its energy storage capacity, so directly using bleeder circuit with electricity
Pressure value uses change of conducting resistance of the metal-oxide-semiconductor near cut-in voltage with gate source voltage to produce the trigger source of control signal
Change and vary widely the characteristic of rate, and first order bleeder circuit, second level bleeder circuit and third level bleeder circuit
Cascade connection so that the control signal of generation is conducive to be sent out according to semiconductor thermo-electric generation apparatus close to a jump signal
The amplitude for going out electric energy voltage adjusts the output current potential of R6 in first order bleeder circuit and produces the triggering of control signal to set manually
Voltage threshold can also reduce the bleeder circuit in metal-oxide-semiconductor turn on process to ensure that control circuit can produce control signal
The loss of generation.
Booster circuit is using low input synchronous pressure-boosting converter TPS61200 as core, by resistance R1, resistance R2, resistance
R3, resistance R4, resistance R5, capacitance C1, capacitance C2, capacitance C3, capacitance C4, capacitance C5, capacitance C6 and inductance L1 form periphery electricity
Road；In order to which boost in voltage of the energy pre-storage capacitance both ends less than 3.3V to 3.3V and is stored into apparatus for storing electrical energy, this programme
Employ low input synchronous pressure-boosting converter and semiconductor power generation device is collected into being less than in energy pre-storage capacitance in advance
The electric energy boosting of 3.3V is stored into apparatus for storing electrical energy after being 3.3V, and then the voltage magnitude in apparatus for storing electrical energy is reached pair
The requirement of wireless senser power supply.
Direct power supply of the apparatus for storing electrical energy as wireless senser, output voltage will be stablized relatively, while should have
Standby larger stored energy capacitance, and electricity collection strategy is interval used by this programme, in order not to influence apparatus for storing electrical energy
Service life, this programme is using ultracapacitor as apparatus for storing electrical energy, on the one hand, ultracapacitor has larger energy storage appearance
Amount, meets the needs of electricity collection, and the influence very little of short periodicity and interrupted charging modes to its service life；On the other hand,
Ultracapacitor allows high current charge-discharge, has stronger carrying load ability, it is thus also avoided that complicated charge-discharge circuit design,
With the progress of electricity collection process, final apparatus for storing electrical energy both end voltage increases to 3.3V, and then can be wireless senser
Power supply.
The metal-oxide-semiconductor is small-power NMOS tube, and metal-oxide-semiconductor is small-power PMOS tube, so that control circuit is relatively low
It can be worked normally under voltage.
The present invention technique effect be：
The present invention provides a kind of energy collecting device based on semiconductor temperature differential generating, is sent out suitable for 1-3.3V temperature difference
The collection of energy of electricity output voltage, can be arrived the energy of semiconductor thermo-electric generation apparatus output by boosting inverter to high efficient and reliable
It is stored in after 3.3V in apparatus for storing electrical energy, so as to make it be run under the voltage of 3.3V for wireless senser power supply.
Brief description of the drawings
Fig. 1 is micropower energy collection circuit schematic diagram.
Embodiment
With reference to embodiment, the invention will be further described, but should not be construed the above-mentioned subject area of the present invention only
It is limited to following embodiments.Without departing from the idea case in the present invention described above, according to ordinary skill knowledge and used
With means, various replacements and change are made, should all be included within the scope of the present invention.
A kind of energy collecting device based on semiconductor temperature differential generating, including by energy pre-storage capacitance, control circuit, boosting electricity
Road and apparatus for storing electrical energy, the energy pre-storage capacitance are connected with the output terminal of power generator, for collecting power generation dress in advance
Put the electric energy sent；The input terminal of control circuit is connected with energy pre-storage capacitance, for gather energy pre-storage capacitance both end voltage value with
As the trigger voltage threshold value for producing control signal, the output terminal of control circuit is connected with the enabled control terminal of booster circuit, uses
To control the work of booster circuit and stopping；The input terminal of booster circuit is connected with energy pre-storage capacitance, the output terminal of booster circuit
It is connected with apparatus for storing electrical energy, is used for the electric energy after boosting is stored in apparatus for storing electrical energy for wireless senser.
Due to radiating efficiency limited during the limitation and thermo-electric generation of semiconductor thermo-electric generation apparatus self-characteristic
Etc. reason, on the premise of using the radiating mode for being not provided with extra power supply, semiconductor thermo-electric generation apparatus can be caused
The hot and cold side temperature difference can be much smaller relative to the temperature difference between heat-producing device and environment, it is and smaller in the temperature difference or the temperature difference is unstable
Working environment under, the power that the semiconductor thermo-electric generation apparatus that is made of four block semiconductor thermoelectric generation films is sent only has milliwatt
Level, the output of the power generator being composed in series by four block semiconductor thermoelectric generation films still remain that voltage is relatively low, unstable etc. asks
Topic, is not enough to directly provide reliable and stable power supply for wireless senser, this programme is changed using low input synchronous boost
Device TPS61200, and the actual motion environment and condition of semiconductor thermo-electric generation apparatus, adding can be by 0.3V -5.5V voltage
It is transformed to the booster circuit of 3.3V so that the voltage that booster circuit is output in apparatus for storing electrical energy is 3.3V.Furthermore due to half
The internal resistance of conductor thermoelectric generation film itself is bigger, and carrying load ability is even more limited, or even cannot directly trigger boost converter
TPS61200 normally starts and works, and ultracapacitor is employed in this programme as energy pre-storage capacitance, i.e. capacitance C8 is super
Capacitor, has very big capacitance, and the positive-negative polarity end of capacitance C8 connects the positive and negative anodes of semiconductor thermo-electric generation apparatus respectively
Property end, access ultracapacitor as energy pre-storage capacitance is to be collected in advance to electric energy, is enabled in conjunction with booster circuit
The control at end, when booster circuit is run, just shifts electric energy from capacitance C8 to apparatus for storing electrical energy, you can effectively receive electric energy
Collect in apparatus for storing electrical energy；Semiconductor thermo-electric generation apparatus into capacitance C8 charging processes equivalent to output short-circuit, it is and electric
Hold C8 power supplys strong equivalent to a carrying load ability in discharge process, so both can guarantee that semiconductor thermo-electric generation apparatus was defeated
The most energy gone out can be collected into capacitance C8 in advance, and can guarantee that booster circuit can be activated and normal work
Make；Furthermore since there is capacitance both end voltage value size can directly reflect the characteristic of electric energy storage capacity, then it can gather capacitance C8
Both end voltage value, then the operating status of booster circuit is controlled after being handled by control circuit.
Control circuit is made of three-level bleeder circuit, and three-level bleeder circuit both ends and capacitance C8 output terminal simultaneously
Connection, and three-level bleeder circuit is cascade connection.In order to which control circuit can be in wider semiconductor power generation device output voltage range
Interior energy works normally, and first order bleeder circuit is individually made of resistance R6, resistance R6 one end ground connection, the cathode of a termination capacitor C8
Property end, second level bleeder circuit is made of metal-oxide-semiconductor Q1 and resistance R7, the source electrode ground connection of metal-oxide-semiconductor Q1, the one of drain electrode connecting resistance R7
End, the positive ends of another termination capacitor C8 of resistance R7, current potential output terminal and the second level partial pressure electricity of first order bleeder circuit
The grid of metal-oxide-semiconductor Q1 is connected in road, and the current potential output terminal of second level bleeder circuit is drawn from the drain electrode end of metal-oxide-semiconductor Q1, the third level
Bleeder circuit is made of metal-oxide-semiconductor Q2, resistance R8 and capacitance C7, and the source electrode of metal-oxide-semiconductor Q2 connects the positive ends of capacitance C8, drain electrode and electricity
Resistance R8 is connected, and the other end of resistance R8 ground connection, capacitance C7 and resistance R8 are in parallel, the current potential output terminal of third level bleeder circuit from
The drain electrode of metal-oxide-semiconductor Q2 is drawn, as the output control signal of control circuit, and with the enabled control of boost converter TPS61200
End is connected, and the grid of metal-oxide-semiconductor Q2 connects the current potential output terminal of second level bleeder circuit；In semiconductor thermo-electric generation apparatus to capacitance C8
During charging, capacitance C8 both end voltages rise, the voltage at three-level bleeder circuit both ends also increases.First order partial pressure electricity
The potential difference that road is exported between current potential and the source electrode of metal-oxide-semiconductor Q1 raises, when metal-oxide-semiconductor Q1 resistance values are reduced to far smaller than electricity suddenly
When hindering the resistance value of R7, the current potential output terminal of second level bleeder circuit is equivalent to ground connection；Due to second level bleeder circuit and the 3rd
The cascade connection of level bleeder circuit, the gate source voltage absolute value of metal-oxide-semiconductor Q2 also increases suddenly, and then causes the conducting of metal-oxide-semiconductor Q2
Resistance strongly reduces the resistance value of far smaller than resistance R8, and capacitance C7 starts quick charge, and the voltage at resistance R8 both ends is rapid
Increase, so the current potential output terminal current potential rise of third level bleeder circuit, i.e., control circuit produces enabled control signal immediately, rises
The enabled control terminal current potential rise of pressure converter, booster circuit are enabled, and booster circuit is using capacitance C8 as input power, by capacitance
In C8 the apparatus for storing electrical energy accessed to booster circuit output terminal is stored after the electric energy boosting of low-voltage；With booster circuit
Operation, the electric energy of capacitance C8 storages are gradually discharged, its both end voltage value gradually reduces, and metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 are turned off,
And the magnitude of voltage at capacitance C7 both ends can slowly be discharged by resistance R8, the current potential of enabled control signal also slowly reduces, until rising
Volt circuit Enable Pin obtains the forbidden energy control signal of low potential, and booster circuit is stopped, this energy collecting device then completes
One charging minor cycle, by the circulation in this cycle, the electric energy that semiconductor thermo-electric generation apparatus is sent then is stored into electric energy storage
In cryopreservation device；Again since three-level bleeder circuit is that cascade connection and the conduction resistance value of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 are electric with grid source
Before cut-in voltage is reached, conduction resistance value can be with for the variation characteristic of pressure, the i.e. voltage difference between the grid and source electrode of metal-oxide-semiconductor
The minor variations of this gate source voltage value and change violent characteristic, control circuit produce enable signal equivalent to one mutation letter
Number, be conducive to set a fixed magnitude of voltage for being used for trigger control circuit and producing control enable signal, when capacitance C8 both ends
When magnitude of voltage reaches this value, booster circuit is enabled and enters working status immediately.
Metal-oxide-semiconductor Q1 is NMOS tube, and metal-oxide-semiconductor Q2 is PMOS tube, and resistance R6 is adjustable potentiometer, it, which exports terminal potential, to lead to
Overregulate knob and adjust its size.
Booster circuit is centered on TPS61200 boost converters, by resistance R1, resistance R2, resistance R3, resistance R4, resistance
R5, capacitance C1, capacitance C2, capacitance C3, capacitance C4, capacitance C5, capacitance C6 and inductance L1 form peripheral circuit.It is directed to absolutely mostly
For number microprocessor and sensor, its supply voltage is 3.3V, according to this requirement, and according to the allusion quotation of TPS61200 peripheral circuits
Shape parameter sets the parameter of peripheral circuit so that output voltage is 3.3V when booster circuit works normally.
Direct power supply of the apparatus for storing electrical energy as wireless senser, output voltage will be stablized relatively, while make again
For electricity collection and the place of storage, to possess larger stored energy capacitance, furthermore, electricity collection process is periodic, interrupted
, this programme uses apparatus for storing electrical energy of the ultracapacitor as booster circuit output terminal, on the one hand, ultracapacitor has
Larger stored energy capacitance, meets the needs of electricity collection；On the other hand, ultracapacitor allow high current charge-discharge, have compared with
Strong carrying load ability, it is thus also avoided that complicated charge-discharge circuit design, and short periodicity and interrupted charge mode are to it
The influence very little in service life, with the progress of electricity collection process, final apparatus for storing electrical energy both end voltage increases to 3.3V, and then
It can power for wireless senser.
Claims (3)
- A kind of 1. energy collecting device based on semiconductor temperature differential generating, it is characterised in that:Including the energy pre-storage capacitance C8, control Circuit and booster circuit processed；The both ends of the energy pre-storage capacitance C8 are connected with the output terminal of power generator；The control circuit includes first order bleeder circuit, second level bleeder circuit and third level bleeder circuit；The first order Bleeder circuit includes an adjustable potentiometer R6；The second level bleeder circuit includes metal-oxide-semiconductor Q1 and resistance R7；The third level Bleeder circuit includes metal-oxide-semiconductor Q2, resistance R8 and capacitance C7；The resistive element of the energy pre-storage capacitance C8 and adjustable potentiometer R6 is simultaneously Connection；The grid of the current potential output pin connection metal-oxide-semiconductor Q1 of the adjustable potentiometer R6；Source electrode, the energy pre-storage electricity of the metal-oxide-semiconductor Q1 Hold the negative polarity end of C8 and one end common ground connection of resistance R8；The drain electrode of the other end connection metal-oxide-semiconductor Q2 of resistance R8；Capacitance C7 is simultaneously It is associated in the both ends of resistance R8；The drain electrode of the grid connection metal-oxide-semiconductor Q1 of metal-oxide-semiconductor Q2；After the drain series resistance R7 of metal-oxide-semiconductor Q1, even Connect the positive ends of energy pre-storage capacitance C8 and the source electrode of metal-oxide-semiconductor Q2.The booster circuit mainly includes low input synchronous pressure-boosting converter TPS61200, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, capacitance C1, capacitance C2, capacitance C3, capacitance C4, capacitance C5, capacitance C6 and inductance L1；After the L pin serial connection inductance L1 of TPS61200, the positive ends of connection energy pre-storage capacitance C8；The VIN pins of TPS61200 Separate three tunnels, ground connection, the 3rd tunnel be successively after ground connection, the second tunnel are sequentially connected in series resistance R2 and resistance R3 after first via series capacitance C2 It is grounded after series resistance R1 and capacitance C1；The positive ends of energy pre-storage capacitance C8 are connected between resistance R1 and capacitance C1； The PS pins connection VIN pins of TPS61200；Between the UVLO pins connection resistance R2 and resistance R3 of TPS61200；TPS61200 EN pins connection metal-oxide-semiconductor Q2 drain electrode；The PWPD pins ground connection of TPS61200；Four tunnels of VOUT extractions of TPS61200, first FB pins are connected after the series capacitance C4 of road, the second tunnel is grounded after being sequentially connected in series resistance R4 and resistance R5, the 3rd tunnel series capacitance C5 After be grounded, be grounded after the 4th tunnel series capacitance C6, capacitance C5 and capacitance C6 are common ground connections；The PGND pins of TPS61200 connect Ground；It is grounded after the VAUX pin serial connection capacitances C3 of TPS61200；The FB pins of TPS61200 be connected to resistance R4 and resistance R5 it Between；The GND pin ground connection of TPS61200.
- 2. the energy collecting device according to claim 1 or 2 based on semiconductor temperature differential generating, it is characterised in that：It is described Metal-oxide-semiconductor Q1 be the enhanced metal-oxide-semiconductor of N-channel, metal-oxide-semiconductor Q2 is P-channel enhancement type metal-oxide-semiconductor, and capacitance C8 is ultracapacitor.
- 3. the energy collecting device according to claim 1 or 2 based on semiconductor temperature differential generating, it is characterised in that：Capacitance Power input positive-negative polarity ends of the C8 as wireless senser, provided reliable and stable power supply.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108599625A (en) * | 2018-07-02 | 2018-09-28 | 浙江理工大学 | Heat preserving exterior wall surfaces externally and internally temperature difference energy collecting device |
| CN114977888A (en) * | 2021-04-23 | 2022-08-30 | 深圳市安服优智能互联科技有限公司 | Thermoelectric generation structure and temperature sensor |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005051934A (en) * | 2003-07-29 | 2005-02-24 | Toyota Motor Corp | Thermoelectric power generation system |
| JP2005117824A (en) * | 2003-10-09 | 2005-04-28 | Toyota Motor Corp | Electric storage device |
| CN101188361A (en) * | 2007-12-03 | 2008-05-28 | 中国科学院电工研究所 | An energy management system for voltage increase under 0.3V low-voltage |
| CN203984034U (en) * | 2014-06-17 | 2014-12-03 | 青岛工学院 | A kind of intelligent semi-conductor thermo-electric generation controller |
| US20150155741A1 (en) * | 2012-08-17 | 2015-06-04 | Zte Corporation | Device for Improving Endurance of Terminal and Terminal Thereof |
| CN105546759A (en) * | 2016-01-12 | 2016-05-04 | 重庆大学 | Central air-conditioning energy-saving control system and control strategy thereof |
| CN105702747A (en) * | 2016-03-24 | 2016-06-22 | 重庆中科渝芯电子有限公司 | Photovoltaic application-based VDMOS by-pass switch |
| CN105703756A (en) * | 2016-03-24 | 2016-06-22 | 重庆中科渝芯电子有限公司 | Photovoltaic-application-based NEXFET bypass switch |
| CN205508825U (en) * | 2016-01-21 | 2016-08-24 | 重庆中科渝芯电子有限公司 | Horizontal insulated -gate bipolar transistor of thin silicon layer SOI base |
| CN106483390A (en) * | 2016-11-22 | 2017-03-08 | 云南电网有限责任公司电力科学研究院 | A kind of field assembling type distribution transformer gear measuring device with electricity |
| CN207184356U (en) * | 2017-06-22 | 2018-04-03 | 重庆大学 | Energy collecting device based on semiconductor temperature differential generating |
-
2017
- 2017-06-22 CN CN201710483000.5A patent/CN107947637A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005051934A (en) * | 2003-07-29 | 2005-02-24 | Toyota Motor Corp | Thermoelectric power generation system |
| JP2005117824A (en) * | 2003-10-09 | 2005-04-28 | Toyota Motor Corp | Electric storage device |
| CN101188361A (en) * | 2007-12-03 | 2008-05-28 | 中国科学院电工研究所 | An energy management system for voltage increase under 0.3V low-voltage |
| US20150155741A1 (en) * | 2012-08-17 | 2015-06-04 | Zte Corporation | Device for Improving Endurance of Terminal and Terminal Thereof |
| CN203984034U (en) * | 2014-06-17 | 2014-12-03 | 青岛工学院 | A kind of intelligent semi-conductor thermo-electric generation controller |
| CN105546759A (en) * | 2016-01-12 | 2016-05-04 | 重庆大学 | Central air-conditioning energy-saving control system and control strategy thereof |
| CN205508825U (en) * | 2016-01-21 | 2016-08-24 | 重庆中科渝芯电子有限公司 | Horizontal insulated -gate bipolar transistor of thin silicon layer SOI base |
| CN105702747A (en) * | 2016-03-24 | 2016-06-22 | 重庆中科渝芯电子有限公司 | Photovoltaic application-based VDMOS by-pass switch |
| CN105703756A (en) * | 2016-03-24 | 2016-06-22 | 重庆中科渝芯电子有限公司 | Photovoltaic-application-based NEXFET bypass switch |
| CN106483390A (en) * | 2016-11-22 | 2017-03-08 | 云南电网有限责任公司电力科学研究院 | A kind of field assembling type distribution transformer gear measuring device with electricity |
| CN207184356U (en) * | 2017-06-22 | 2018-04-03 | 重庆大学 | Energy collecting device based on semiconductor temperature differential generating |
Non-Patent Citations (1)
| Title |
|---|
| 齐凤河;胡家旺;熊春宇;: "基于LTC3108的电焊热能收集转换装置的研究", 大庆师范学院学报, no. 03 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108599625A (en) * | 2018-07-02 | 2018-09-28 | 浙江理工大学 | Heat preserving exterior wall surfaces externally and internally temperature difference energy collecting device |
| CN108599625B (en) * | 2018-07-02 | 2023-11-14 | 浙江理工大学 | Thermal insulation external wall inner and outer surface temperature difference energy collecting device |
| CN114977888A (en) * | 2021-04-23 | 2022-08-30 | 深圳市安服优智能互联科技有限公司 | Thermoelectric generation structure and temperature sensor |
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