CN108122871B - A kind of H bridge arm two-side radiation power module - Google Patents

A kind of H bridge arm two-side radiation power module Download PDF

Info

Publication number
CN108122871B
CN108122871B CN201611072535.5A CN201611072535A CN108122871B CN 108122871 B CN108122871 B CN 108122871B CN 201611072535 A CN201611072535 A CN 201611072535A CN 108122871 B CN108122871 B CN 108122871B
Authority
CN
China
Prior art keywords
liner plate
direct current
power module
group
copper bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201611072535.5A
Other languages
Chinese (zh)
Other versions
CN108122871A (en
Inventor
金肩舸
王晓元
杨进锋
李彦涌
范伟
彭凯
彭银中
王雄
漆宇
杨涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CRRC Zhuzhou Institute Co Ltd
Original Assignee
CRRC Zhuzhou Institute Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CRRC Zhuzhou Institute Co Ltd filed Critical CRRC Zhuzhou Institute Co Ltd
Priority to CN201611072535.5A priority Critical patent/CN108122871B/en
Publication of CN108122871A publication Critical patent/CN108122871A/en
Application granted granted Critical
Publication of CN108122871B publication Critical patent/CN108122871B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A kind of H bridge arm two-side radiation power module, comprising: radiator layer;Main circuit layer, it includes H bridge arm power semiconductor circuits and at least two groups liner plate, first group of liner plate and second group of liner plate are arranged in contact respectively in the first side and second side of radiator layer, and the power semiconductor chip in H bridge arm power semiconductor circuits is separately positioned on first group of liner plate and second group of liner plate;Control circuit, it includes the first control module and the second control module, first control module and the second control module are respectively distributed to the two sides of radiator layer, and are electrically connected with H bridge arm power semiconductor circuits, for controlling the working condition of H bridge arm power semiconductor circuits.Compared to existing power semiconductor; control circuit has been integrated in inside equipment by the power module; also there is no need to additionally configure control circuit at runtime in this way; so that power module can be realized the intelligentized control methods function such as driving, monitoring, protection, diagnosis, the generalization degree of equipment is improved.

Description

A kind of H bridge arm two-side radiation power module
Technical field
The present invention relates to power electronics fields, specifically, being related to a kind of H bridge arm two-side radiation power module.
Background technique
Power semiconductor is widely used in the fields such as rail traffic, industrial frequency conversion, but standard-package power semiconductor Device only has the function of switching tube, and integrated level is not high.As the unsteady flow module of one of current transformer core component, then by marking Quasi- encapsulation power semiconductor, radiator, low-inductance bus, gate driver and structural member etc. are constituted, due to by construction shape The limitation of formula, device layout and device function, power density, intelligence and it is convenient in terms of there is also many not perfect Place.
Summary of the invention
To solve the above problems, the present invention provides a kind of H bridge arm two-side radiation power module, the power module packet It includes:
Radiator layer;
Main circuit layer comprising H bridge arm power semiconductor circuits and at least two groups liner plate, wherein first group of liner plate and Two groups of liner plates are arranged in contact respectively in the first side and second side of the radiator layer, the H bridge arm power half Power semiconductor chip in conductor circuit is separately positioned on first group of liner plate and second group of liner plate;
Control circuit comprising the first control module and the second control module, first control module and the second control Module is respectively distributed to the two sides of the radiator layer, and is electrically connected with the H bridge arm power semiconductor circuits, for controlling State the working condition of H bridge arm power semiconductor circuits.
According to one embodiment of present invention, first group of liner plate and second group of liner plate separately include multiple matrix form rows The liner plate of cloth.
According to one embodiment of present invention, each power semiconductor chip correspondence is fixed at each liner plate On, and liner plate unit is formed with corresponding liner plate.
According to one embodiment of present invention, the upper bridge arm power semiconductor chip in the H bridge arm power semiconductor circuits Piece and lower bridge arm power semiconductor chip are separately positioned on first group of liner plate and second group of liner plate.
According to one embodiment of present invention, it is provided on one group of liner plate in first group of liner plate and second group of liner plate The positive copper bar of direct current and AC copper-line are provided with the negative copper bar of direct current and AC copper-line, and the direct current cupric on another group of liner plate Row is the plate of part stacked setting with the AC copper-line of the same side, and the AC copper-line of the negative copper bar of the direct current and the same side is portion Divide the plate of stacked setting.
According to one embodiment of present invention, the positive copper bar of the direct current, the negative copper bar of direct current and AC copper-line all have with The pin of the conductive layer electrical connection of liner plate, wherein
It is provided on the positive copper bar of the direct current of liner plate or the AC copper-line of same side for the same side far from liner plate AC copper-line or the positive copper bar of direct current on the avoid holes that pass through of pin, and/or, close to the negative copper bar of the direct current or phase of liner plate What the AC copper-line or the pin on the negative copper bar of direct current that same side of the confession far from liner plate is provided on ipsilateral AC copper-line passed through Avoid holes.
According to one embodiment of present invention, the first end of the radiator layer be provided with for the direct current cupric Arrange connection direct current electrical connector, the direct current negative electricity connector for connect with the direct current negative copper bar and be used for and the friendship Flow the AC power connector of copper bar connection, wherein the direct current electrical connector, direct current negative electricity connector and AC power connector It is configured to plug-in electric connection.
According to one embodiment of present invention, the power module further include:
Current sensor is arranged at the AC connector, and is electrically connected to the control circuit.
According to one embodiment of present invention, the first end of the radiator layer is provided with end housing, and the direct current Electrical connector, the direct current negative electricity connector, the AC power connector and the plug-in pipe fitting pass through the end housing.
According to one embodiment of present invention, it is respectively arranged in the first side and second side of the radiator layer First shell and second shell, wherein
The first shell and the end housing and radiator layer form the first accommodating chamber, the positive copper bar of the direct current and are located at AC copper-line in the first side of the radiator layer is located in first accommodating chamber;
The second shell and the end housing and radiator layer form the second accommodating chamber, the negative copper bar of the direct current and are located at AC copper-line in the second side of the radiator layer is located in second accommodating chamber.
According to one embodiment of present invention, insulation material is perfused in first accommodating chamber and/or the second accommodating chamber Material.
According to one embodiment of present invention, third shell is respectively arranged on the outside of the first shell and second shell Body and the 4th shell, the third shell and first shell form the third accommodating chamber for accommodating first control module, 4th shell and second shell form the 4th accommodating chamber for accommodating second control module, the first control mould Block and the electrical connection of the second control module.
According to one embodiment of present invention, first group of liner plate and second group of liner plate pass through setting in its conduction respectively Contact pin on layer is correspondingly connected with first control module and the second control module.
According to one embodiment of present invention, the power module further includes respectively by the third shell and described Four shells and the screw rod for passing through the end housing, the first end face of the end housing is extended in one end of the screw rod.
According to one embodiment of present invention, the first end face of the radiator layer is provided with coolant inlet and cooling Liquid outlet, is provided with plug-in pipe fitting in the coolant inlet and cooling liquid outlet.
According to one embodiment of present invention, the power module further include:
Temperature sensor, setting are connect on the liner plate, and with the control circuit signal.
According to one embodiment of present invention, pilot hole is provided in the first end face of the radiator layer.
Compared to existing power semiconductor, control circuit has been integrated in equipment by power module provided by the present invention Portion, so at runtime also there is no need to additionally configure control circuit so that power module can be realized driving, monitoring, The intelligentized control methods functions such as protection, diagnosis, improve the generalization degree of equipment.
Meanwhile the power module uses the water cooling method without substrate, compared to existing power module, heat dissipation It is more efficient, and volume is smaller, structure is simpler.In addition, this power module uses the connection type of quick plug-in, The dismounting for also allowing for equipment in this way is more convenient.For this power module, carry out with can be convenient according to actual needs Parallel combination.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention can be by specification, right Specifically noted structure is achieved and obtained in claim and attached drawing.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is required attached drawing in technical description to do simple introduction:
Fig. 1 is the explosive view of power module according to an embodiment of the invention;
Fig. 2 is the hierarchical diagram of power module according to an embodiment of the invention;
Fig. 3 is the electrical block diagram of H bridge arm power semiconductor circuits according to an embodiment of the invention.
Fig. 4 is the perspective view of power semiconductor modular according to an embodiment of the invention;
In the accompanying drawings, identical component uses identical appended drawing reference, and the attached drawing is not drawn according to the actual ratio.
Specific embodiment
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings and examples, how to apply to the present invention whereby Technological means solves technical problem, and the realization process for reaching technical effect can fully understand and implement.It needs to illustrate As long as not constituting conflict, each feature in each embodiment and each embodiment in the present invention can be combined with each other, It is within the scope of the present invention to be formed by technical solution.
Meanwhile in the following description, for illustrative purposes and numerous specific details are set forth, to provide to of the invention real Apply the thorough understanding of example.It will be apparent, however, to one skilled in the art, that the present invention can not have to tool here Body details or described ad hoc fashion are implemented.
For the problems of in the prior art, the present invention provides a kind of new two-side radiation power modules.Fig. 1 and Fig. 2 respectively illustrates the explosive view and hierarchical diagram of the power module in the present embodiment.
As depicted in figs. 1 and 2, in the present embodiment, power module 100 includes: radiator layer 1, main circuit layer 2 and control electricity Road.Wherein, main circuit layer 2 includes H bridge arm power semiconductor circuits and at least two groups liner plate 21.Wherein, first group of liner plate 21a is straight It connects and is arranged in the first side of radiator layer 1 in contact, second group of liner plate 21b direct contact type radiator layer is set In 1 second side.Power semiconductor chip 22 in H bridge arm power semiconductor circuits is separately positioned on first group of liner plate 21a On second group of liner plate 21b.
In the present embodiment, first group of liner plate 21a and second group of liner plate 21b separately include the liner plate that multiple matrix forms are arranged. Wherein, each power semiconductor chip correspondence is fixed on corresponding liner plate, and forms liner plate unit with corresponding liner plate.
The liner plate that power module 100 is included provided by the present embodiment is set up directly on two sides of radiator layer 1 On, in this way it is possible to prevente effectively from the substrate of the power semiconductor using standard packaging.This setup can effectively drop Thermal resistance between low-power semiconductor chip and radiator layer, to improve the radiating efficiency of entire power module.Meanwhile it is this Set-up mode can also make the structure of power module 100 more compact, facilitate the volume for reducing entire power module and again Amount.Further, since power semiconductor chip is the two sides that radiator layer 1 is arranged in, therefore can have in this way in the present embodiment Effect increase radiator layer 1 utilizes area, to help to further increase the power density of power module and reduce power mould The volume of block.
Fig. 3 shows the electrical block diagram of H bridge arm power semiconductor circuits in the present embodiment.
As shown in figure 3, H bridge arm power semiconductor circuits include the first power semiconductor chip 301, the second power semiconductor Chip 302, third power semiconductor chip 303 and the 4th power semiconductor chip 304.Wherein, in the present embodiment, it is preferable that First power semiconductor chip 301 and third power semiconductor chip 303 form the upper bridge arm of H bridge arm power semiconductor circuits simultaneously It is arranged on first group of liner plate 21a, the second power semiconductor chip 302 and the 4th power semiconductor chip 304 form H bridge arm function The lower bridge arm of rate semiconductor circuit is simultaneously arranged on second group of liner plate 21b.
It should be pointed out that in different embodiments of the invention, it is each included in H bridge arm power semiconductor circuits Power semiconductor chip can realize that the invention is not limited thereto using different chips.For example, in an implementation of the invention In example, power semiconductor chip can be realized using the igbt chip with freewheeling diode.
In order to improve the space utilization rate of radiator layer 1, in the present embodiment, the main body of radiator layer 1 is preferably rectangular It is box-like, also, first side and the setting of second side relative type motor.In the present embodiment, with the upper table of the radiator layer 1 in Fig. 1 Face is first side, and lower surface be second side for be illustrated.It should be noted that liner plate may be provided at radiator layer On 1 multiple surfaces, and the surface for being provided with the radiator layer 1 of liner plate is also not necessarily limited to relative type motor distribution.
Preferably, liner plate (including first group of liner plate 21a and second group of liner plate 21b) can be directly solid by the way of welding It is scheduled in the first side and second side of radiator layer 1.And the power semiconductor chip 22 in power semiconductor circuits can also To be arranged on corresponding liner plate by welding.This connection structure is simple, and preferably by power semiconductor chip In 22 heat transfers to radiator layer 1 generated.
It should be pointed out that in different embodiments of the invention, according to actual needs, liner plate 21 can be by different Rational method is fixed on the side of radiator layer 1, and the invention is not limited thereto.
In the present embodiment, liner plate is preferably in matrix form distribution in the first side and second side of radiator layer 1.It is this Mode enables to liner plate close-packed arrays, to optimize the structure of power module 100, facilitates the body for reducing power module 100 It accumulates and improves its power density.
In the present embodiment, each device in power semiconductor circuits is preferably attached by bonding line, certainly, In In other embodiments of the invention, each device in power semiconductor circuits can also be connected by other reasonable manners It connects, the invention is not limited thereto.
The positive copper bar 37 of direct current and AC copper-line 39, and the positive copper bar 37 of direct current are set in the first side of radiator layer 1 And the outside of first group of liner plate 21a is arranged in for AC copper-line 39 and electric energy transmits between first group of liner plate 21a.The positive copper bar of direct current 37 and AC copper-line 39 be configured to plate, the two partly overlaps in up and down direction as shown in Figure 1.Therebetween and Insulating layer (not shown) is arranged in outermost.
Similarly, the negative copper bar 38 of direct current and AC copper-line 39 are set in the second side of radiator layer 1, and direct current is negative The outside of liner plate unit 2 is arranged in copper bar 38 and AC copper-line 39 and electric energy transmits between second group of liner plate 21b.The negative copper of direct current The AC copper-line 39 of row 38 and the same side is configured to plate, and the two partly overlaps in up and down direction as shown in Figure 1, and The negative copper bar 38 of direct current is relative to AC copper-line 39 far from liner plate unit 2.Therebetween and outermost setting insulating layer is (in figure It is not shown).
It should be noted that the positive copper bar 37 of direct current and AC copper-line 39, between the negative copper bar 38 of direct current and AC copper-line 39 Structural relation can select according to the actual situation.It is, the application does not limit the positive copper bar 37 of direct current and AC copper-line 39, The opposite overlying relation of direct current negative copper bar 38 and AC copper-line 39.
In one embodiment, the positive copper bar 37 of direct current, the negative copper bar 38 of direct current and AC copper-line 39 all have pin 36, with In being connect with the conductive layer of corresponding liner plate to realizing electrical transmission.For example, the positive copper bar 37 of direct current is far from first group of liner plate 21a, and AC copper-line 39 is close to first group of liner plate 21a, it is, the positive copper bar 37 of direct current is on AC copper-line 39.In order to realize direct current The pin 36 of positive copper bar 37 can be provided with avoid holes 41 with the conductive layer contact of first group of liner plate 21a on AC copper-line 39, It is passed through with the pin 36 for the positive copper bar of direct current.
It should be pointed out that in the present embodiment, on the second side direction of radiator layer 1, the negative copper bar 38 of direct current and friendship The position of stream copper bar 39 and connection relationship and the position and connection relationship of the positive copper bar 37 of direct current and AC copper-line 39 are identical or approximate, Details are not described herein.
In the first end of radiator layer 1, direct current electrical connector 32, direct current electrical connector 32 and the positive copper bar of direct current are set 37 connections.Meanwhile 33 are connected in the first end of radiator layer 1 setting direct current negative electricity, direct current negative electricity connects 33 and the negative copper bar of direct current 38 connections.Also, the AC power connector 35 for connecting with AC copper-line 39 is additionally provided in the first end of AC copper-line 39.
In the present embodiment, direct current electrical connector 32, direct current negative electricity connector 33 and AC power connector 35 are preferably It is configured to plug-in electric connection, for quickly connecting.It is preferred that as shown in Figure 1, direct current electrical connector 32 includes The spaced elastic slice 30 of at least three relative type motors.In addition, direct current negative electricity connector 33 and AC power connector 35 similarly may be used To be set as including the spaced elastic slice 30 of at least three relative type motors.By the way that direct current electrical connector 32, direct current negative electricity are connected Connect device 33 and AC power connector 35 be configured to this plug-in connector can by power module 100 smoothly and simply with system Fast insert-pull connection.
It should be pointed out that in different embodiments of the invention, direct current electrical connector 32 and the positive copper bar 37 of direct current were both It can be integrated, or split type structure.In split type manufacturing process, can by welding, riveting or The connection types such as bolt are fixed.Similarly, direct current negative electricity connector 33 both can be integrated manufacture with the negative copper bar 38 of direct current, It can be split type structure, and fixed by connection types such as welding, riveting or bolts.AC power connector 35 with exchange copper Row 39 can be integration manufacture, or split type structure, and fixed by connection types such as welding, riveting or bolts.
It is also desirable to which, it is noted that AC power connector shown in FIG. 1 35 and AC copper-line 39 are only schematically Illustrate its arrangement mode, is not to be defined to AC power connector 35 and the specific structure and quantity of AC copper-line 39. In the present embodiment, since the circuit that main circuit layer includes is H bridge arm power semiconductor circuits, AC power connector 35 and friendship Stream copper bar 39 accordingly respectively includes two group interfaces, this two group interface corresponds respectively to two of H bridge arm power semiconductor circuits Ac output end.
In the present embodiment, radiator layer 1 is preferably by the way of water-cooling.As shown in Figure 1, in radiator layer 1 First end is provided with coolant inlet 13 and cooling liquid outlet, to be used to connect with external coolant system, to power module 100 The heat generating components heat dissipation such as power semiconductor chip.Also, plug is provided in coolant inlet 13 and cooling liquid outlet Formula pipe fitting 15.Easily this power module 100 can be connect with external coolant system by this set.In addition, This plug-in pipe fitting 15 is arranged at scattered with direct current electrical connector 32, direct current negative electricity connector 33 and AC power connector 35 The same end of hot device layer 1 can be realized by blindmate form and electrically be connect with coolant liquid, greatly improve installation convenience.
As depicted in figs. 1 and 2, in the present embodiment, the first end of radiator layer 1 is provided with end housing 70, for limiting The position of direct current electrical connector 32, direct current negative electricity connector 33, AC power connector 35 and plug-in pipe fitting 15.Specifically Ground, direct current electrical connector 32, direct current negative electricity connector 33, AC power connector 35 and plug-in pipe fitting 15 both pass through end housing 70, to electrically be connect with coolant liquid with the external world.Preferably, in the present embodiment, end housing 70 is played absolutely by insulating materials such as plastics Edge effect.
First shell 71, and first shell 71 and end housing 70 and radiator are set in the first side of radiator layer 1 Layer 1 forms the first accommodating chamber.The positive copper bar 37 of direct current, and the AC copper-line 39 in the first side of radiator layer 1 and One group of liner plate 21a is located in the first accommodating chamber.
Similarly, second shell 73 is set in the second side of radiator layer 1, and second shell 73 and end housing 70 and Radiator layer 1 forms the second accommodating chamber.The negative copper bar 38 of direct current, and the AC copper-line in the second side of radiator layer 1 39 and second group of liner plate 21b is located in the second accommodating chamber.
In the present embodiment, it is perfused with insulating materials in the first accommodating chamber and the second accommodating chamber, can also be realized in this way The reliable insulation of each device in accommodating chamber.For example, insulating materials can be silica gel, silicon rubber or epoxy material etc..Pass through this Kind setting can guarantee that stablizing for power module 100 works normally, and prolong the service life.
In one embodiment, third shell 75, third shell 75 and first shell are set in the outside of first shell 71 71 form third accommodating chamber.In the outside of second shell 73, the 4th shell 77, the 4th shell 77 and the formation of second shell 73 are set 4th accommodating chamber.Meanwhile control circuit board is provided in third accommodating chamber and the 4th accommodating chamber.Wherein, control circuit board Including the first control module (i.e. the first control panel) 6a and the second control module (i.e. the second control panel) 6b.First control module 6a It is electrically connected with first group of liner plate 21a, to realize driving, monitoring, the protection to each devices/chips on first group of liner plate 21a With diagnosis etc. intelligentized control methods.Second control module 6b is electrically connected with second group of liner plate 21b, to realize to second group of liner plate The intelligentized control methods such as driving, monitoring, protection and the diagnosis of the upper each devices/chips of 21b.
In the present embodiment, the connection between first shell 71, second shell 73, third shell 75 and the 4th shell 77 is limited The positions of other components of power module 100, and supporting role is played, meanwhile, guarantee the normal work of power module 100 Make, avoids the interference between different components.In addition, above-mentioned setting optimizes the overall structure of power module 100, make it have The advantages that integrated level is high, small in size, light-weight.
In conjunction with Fig. 4 as can be seen that in the present embodiment, exists between the first control module 6a and the second control module 6b and be electrically connected It connects, the two ordinatedly realizes the control to controlled devices/chips each in power module 100.Wherein, a control mould wherein The second end of block is provided with power interface 61, for providing low-tension supply for control module.And preferably, the first control mould The second end of block 6a is provided with optical fiber interface 62, to realize the communication of control module Yu top level control unit.
It is additionally provided with current sensor interface (not shown) in the inside of control circuit board 6, to realize control circuit The connection of plate 6 and current sensor 5.It can guarantee the normal work of control circuit by above-mentioned setting, and be conducive to signal biography It is defeated, reduce interference.In addition, above-mentioned set-up mode facilitates the optimization layout of power module 100, generalization degree is high.
It should be noted that being provided with contact pin 23 on the conductive layer of first group of liner plate 21a and second group of liner plate 21b. Contact pin 23 is each passed through first shell 71 and second shell 73 up and down and is electrically connected with corresponding control module, thus real Signal between existing control module and corresponding liner plate transmits.
In the present embodiment, in order to optimize the structure of power module 100, facilitates the setting of the components such as contact pin 23, can also set Set auxiliary liner plate 21 '.The auxiliary liner plate 21 ' is electrically connected with liner plate 21.For example, in Fig. 1, in order to optimize the laying position of contact pin 23 It sets, auxiliary liner plate 21 ' is provided in the first side and second side close to the second end face of radiator layer 1.
In the present embodiment, power module 100 also includes preferably screw rod 11.Screw rod 11 passes through third shell the 75, the 4th Shell 77 and end housing 70 simultaneously extend to except the first end face of end housing 70.
During installation power module 100, which is used to be oriented to and position for power module 100.It is installing In the process, screw rod 11 also acts the effect of cushion impact forces.In addition, the screw rod 11 is also after power module 100 is installed in place Play the role of rigid power module 100.In the present embodiment, it is respectively used to cooperate with third shell 75 and the 4th shell 77 Two screw rods being arranged are preferably provided on the diagonal line of same end face of end housing 70.
In the present embodiment, pilot hole 12 is provided in the first end face of end housing 70.Preferably, in the first end of end housing 70 Two pilot holes 12 are set on face, and are located on diagonal line.Specifically, two pilot holes 12 and two screw rods 11 are distributed in end housing On 70 four angles.In 100 installation process of power module, first with pilot hole 12 and the guide pin of extraneous system, carry out Accurate guiding and positioning, and then smoothly realize and electrically connect with the quick plug-in of coolant line.In addition, in power module After 100 are installed in place, which also acts the effect of rigid power module 100.
In order to carry out the acquisition of temperature signal, temperature sensor 8 is also provided on liner plate.It is real in difference of the invention It applies in example, the specific installation site of temperature sensor is set according to the practical heat condition of power semiconductor chip 22, control Module can be acquired by the temperature signal that contact pin generates above-mentioned temperature sensor, for driving, monitoring, protect And the intelligentized control methods such as diagnosis.
According to actual needs, current sensor 5 can also be arranged in power module 100 at AC power connector 35, this electricity Flow sensor 5 can be connect with control circuit signal.Certainly, the setting position of current sensor 5 is without being limited thereto, also can be set In other positions.For example, in other embodiments of the invention, current sensor can also control electricity in control circuit board Road plate can carry out current signal acquisition by above-mentioned current sensor, to be used to the intelligence such as drive, monitor, protect and diagnose Energyization control.
In addition, the internal power semiconductor chip 22 measured with current measurement and temperature also can be selected in power module 100, To realize the fast and accurately monitoring of chip-scale.Control circuit board is acquired above-mentioned signal by respective pins, for driving The intelligentized control methods such as dynamic, monitoring, protection and diagnosis.
It should be understood that disclosed embodiment of this invention is not limited to specific structure disclosed herein or processing step Suddenly, the equivalent substitute for these features that those of ordinary skill in the related art are understood should be extended to.It should also be understood that It is that term as used herein is used only for the purpose of describing specific embodiments, and is not intended to limit.
" one embodiment " or " embodiment " mentioned in specification means the special characteristic described in conjunction with the embodiments, structure Or characteristic is included at least one embodiment of the present invention.Therefore, the phrase " reality that specification various places throughout occurs Apply example " or " embodiment " the same embodiment might not be referred both to.
Although above-mentioned example is used to illustrate principle of the present invention in one or more application, for the technology of this field For personnel, without departing from the principles and ideas of the present invention, hence it is evident that can in form, the details of usage and implementation It is upper that various modifications may be made and does not have to make the creative labor.Therefore, the present invention is defined by the appended claims.

Claims (16)

1. a kind of H bridge arm two-side radiation power module, which is characterized in that the power module includes:
Radiator layer;
Main circuit layer comprising H bridge arm power semiconductor circuits and at least two groups liner plate, wherein first group of liner plate and second group Liner plate is arranged in contact respectively in the first side and second side of the radiator layer, the H bridge arm power semiconductor Power semiconductor chip in circuit is separately positioned on first group of liner plate and second group of liner plate;
Control circuit comprising the first control module and the second control module, first control module and the second control module The two sides of the radiator layer are respectively distributed to, and are electrically connected with the H bridge arm power semiconductor circuits, for controlling the H The working condition of bridge arm power semiconductor circuits;
It is respectively arranged with first shell and second shell in the first side and second side of the radiator layer, described Third shell and the 4th shell are respectively arranged on the outside of one shell and second shell, the third shell is formed with first shell For accommodating the third accommodating chamber of first control module, the 4th shell and second shell are formed for accommodating described the 4th accommodating chamber of two control modules, first control module and the electrical connection of the second control module.
2. power module as described in claim 1, which is characterized in that first group of liner plate and second group of liner plate separately include The liner plate of multiple matrix form arrangements.
3. power module as claimed in claim 2, which is characterized in that each corresponding fixed setting of the power semiconductor chip Liner plate unit is formed on each liner plate, and with corresponding liner plate.
4. power module as described in claim 1, which is characterized in that the upper bridge arm in the H bridge arm power semiconductor circuits Power semiconductor chip and lower bridge arm power semiconductor chip are separately positioned on first group of liner plate and second group of liner plate.
5. power module as described in any one of claims 1 to 4, which is characterized in that first group of liner plate and second group It is provided with the positive copper bar of direct current and AC copper-line on one group of liner plate in liner plate, the negative copper bar of direct current and friendship are provided on another group of liner plate Copper bar is flowed, and the positive copper bar of the direct current and the AC copper-line of the same side are the plate of part stacked setting, the negative copper of direct current The AC copper-line of row and the same side is the plate of part stacked setting.
6. power module as claimed in claim 5, which is characterized in that the positive copper bar of the direct current, the negative copper bar of direct current and exchange Copper bar all has the pin being electrically connected with the conductive layer of liner plate, wherein
The friendship for the same side far from liner plate is provided on the positive copper bar of the direct current of liner plate or the AC copper-line of same side The avoid holes that pin on stream copper bar or the positive copper bar of direct current passes through, and/or, the negative copper bar of the direct current or same side close to liner plate AC copper-line on be provided with AC copper-line or the evacuation that passes through of the pin on the negative copper bar of direct current for the same side far from liner plate Hole.
7. power module as claimed in claim 5, which is characterized in that the first end of the radiator layer be provided with for The direct current electrical connector of the positive copper bar connection of the direct current, the direct current negative electricity connector for being connect with the negative copper bar of the direct current and AC power connector for being connect with the AC copper-line, wherein the direct current electrical connector, direct current negative electricity connector and AC power connector is configured to plug-in electric connection.
8. power module as claimed in claim 7, which is characterized in that the power module further include:
Current sensor is arranged at the AC connector, and is electrically connected to the control circuit.
9. power module as claimed in claim 7, which is characterized in that the first end of the radiator layer is provided with end housing, And the direct current electrical connector, the direct current negative electricity connector, the AC power connector and the plug-in pipe fitting Across the end housing.
10. power module as claimed in claim 9, which is characterized in that the first shell and the end housing and radiator layer Form the first accommodating chamber, the positive copper bar of the direct current and the AC copper-line in the first side of the radiator layer are located at institute It states in the first accommodating chamber;
The second shell and the end housing and radiator layer form the second accommodating chamber, the negative copper bar of the direct current and are located at described AC copper-line in the second side of radiator layer is located in second accommodating chamber.
11. power module as claimed in claim 10, which is characterized in that in first accommodating chamber and/or the second accommodating chamber Inside it is perfused with insulating materials.
12. power module as claimed in claim 10, which is characterized in that first group of liner plate and second group of liner plate lead to respectively The contact pin being arranged on its conductive layer is crossed to be correspondingly connected with first control module and the second control module.
13. power module as claimed in claim 12, which is characterized in that the power module further includes respectively by described the Three shells and the 4th shell and the screw rod for passing through the end housing, the first end of the end housing is extended in one end of the screw rod Face.
14. power module as described in any one of claims 1 to 4, which is characterized in that in the first end of the radiator layer Face is provided with coolant inlet and cooling liquid outlet, and plug-in pipe is provided in the coolant inlet and cooling liquid outlet and is connect Head.
15. power module as described in any one of claims 1 to 4, which is characterized in that the power module further include:
Temperature sensor, setting are connect on the liner plate, and with the control circuit signal.
16. power module as described in any one of claims 1 to 4, which is characterized in that the first end face of the radiator layer On be provided with pilot hole.
CN201611072535.5A 2016-11-28 2016-11-28 A kind of H bridge arm two-side radiation power module Active CN108122871B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611072535.5A CN108122871B (en) 2016-11-28 2016-11-28 A kind of H bridge arm two-side radiation power module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611072535.5A CN108122871B (en) 2016-11-28 2016-11-28 A kind of H bridge arm two-side radiation power module

Publications (2)

Publication Number Publication Date
CN108122871A CN108122871A (en) 2018-06-05
CN108122871B true CN108122871B (en) 2019-11-29

Family

ID=62226184

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611072535.5A Active CN108122871B (en) 2016-11-28 2016-11-28 A kind of H bridge arm two-side radiation power module

Country Status (1)

Country Link
CN (1) CN108122871B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022223448A1 (en) * 2021-04-19 2022-10-27 Zf Friedrichshafen Ag Inverter structure of an electronics module for an electric drive of a vehicle

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109347340A (en) * 2018-11-26 2019-02-15 滨州学院 A kind of power module of high-performance and high intense

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7061775B2 (en) * 2002-01-16 2006-06-13 Rockwell Automation Technologies, Inc. Power converter having improved EMI shielding
DE102008061468A1 (en) * 2008-12-10 2010-06-17 Siemens Aktiengesellschaft Power converter module with cooled busbar
CN105578838B (en) * 2014-10-16 2018-01-05 中山大洋电机股份有限公司 A kind of electric machine controller
CN104486901B (en) * 2014-11-19 2016-03-23 株洲南车时代电气股份有限公司 Radiating insulating liner plate, package module comprising this liner plate and preparation method thereof
CN205430072U (en) * 2016-03-17 2016-08-03 中车株洲电力机车研究所有限公司 Converter power module
CN205725420U (en) * 2016-03-28 2016-11-23 上海中电罗莱电气股份有限公司 Rolling stock power model and the current transformer of rolling stock

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022223448A1 (en) * 2021-04-19 2022-10-27 Zf Friedrichshafen Ag Inverter structure of an electronics module for an electric drive of a vehicle

Also Published As

Publication number Publication date
CN108122871A (en) 2018-06-05

Similar Documents

Publication Publication Date Title
US8107241B2 (en) Electric power conversion apparatus including cooling units
CN111800986B (en) Motor controller based on discrete device
CN207098959U (en) Water cooling substrate and the integrated auxiliary power module of commutation inversion
JP2012064609A (en) Semiconductor power module and power converter
CN108122871B (en) A kind of H bridge arm two-side radiation power module
JP2023505595A (en) Cooling device for semiconductor switch elements, power inverter device, and assembly comprising power inverter device and electric machine
CN210274971U (en) Converter can quick radiating water cooling system
CN107786070B (en) Intelligent power module, motor controller and vehicle
CN108122866B (en) A kind of integrated power module
CN102548367A (en) Small passageway liquid cooling base board of power electronic integration module with double-trapezoid cross section fins
CN110165907A (en) A kind of multi-functional high-density power unit applied to vehicle-mounted energy storage type guide rail electric car
CN202476021U (en) Power electronic integration module tiny passage liquid cooling substrate with double trapezoid cross section fins
CN108122865B (en) A kind of H bridge arm power module for track vehicle
CN202888153U (en) Metal-coated ceramic substrate with radiating function
CN108123614B (en) Power module
CN109152310A (en) A kind of more circular arc microchannel heat sinks
CN108123613A (en) A kind of power module for track vehicle
CN107818961B (en) A kind of intelligent power module for track vehicle
CN217741984U (en) Combined type circuit board
WO2009104558A1 (en) Optical interconnection device
CN220274101U (en) Heat abstractor, power module, electrical power generating system, vehicle and photovoltaic system
CN203553138U (en) Superposed power module
CN220711877U (en) IGBT hydrogen production power supply unit structure
CN210630019U (en) Photovoltaic network shutdown heat abstractor
CN219019296U (en) Novel power management terminal

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant