CN202476021U - Power electronic integration module tiny passage liquid cooling substrate with double trapezoid cross section fins - Google Patents

Power electronic integration module tiny passage liquid cooling substrate with double trapezoid cross section fins Download PDF

Info

Publication number
CN202476021U
CN202476021U CN2012200385354U CN201220038535U CN202476021U CN 202476021 U CN202476021 U CN 202476021U CN 2012200385354 U CN2012200385354 U CN 2012200385354U CN 201220038535 U CN201220038535 U CN 201220038535U CN 202476021 U CN202476021 U CN 202476021U
Authority
CN
China
Prior art keywords
fin
section
liquid cooling
heat conduction
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2012200385354U
Other languages
Chinese (zh)
Inventor
李现明
韩旭
赵怀杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong University
Original Assignee
Shandong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong University filed Critical Shandong University
Priority to CN2012200385354U priority Critical patent/CN202476021U/en
Application granted granted Critical
Publication of CN202476021U publication Critical patent/CN202476021U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The utility model discloses a power electronic integration module tiny passage liquid cooling substrate with double trapezoid cross section fins. The power electronic integration module tiny passage liquid cooling substrate with the double trapezoid cross section fins is high in heat exchange efficiency, little in pressure loss, good in temperature uniformity of a device under the same power consumption, not prone to block and easy to wash after blocking. Meanwhile, the power electronic integration module tiny passage liquid cooling substrate with the double trapezoid cross section fins is simple in structure, good in stability and low in cost and the fins are not easy to deform. The power electronic integration module tiny passage liquid cooling substrate with the double trapezoid cross section fins comprises two heat conduction insulation boards with the upper lateral faces and the lower lateral faces all applied with copper, liquid cooling passages which are clamped in the middle of the two heat conduction insulation boards and a heat conduction material fill area or a non heat conduction material fill area. The liquid cooling passages are cavities with double trapezoid cross section fin arrays, the gaps between the fins form a micro passage network, power electronic device groups are distributed at the heat conduction insulation board areas corresponded to the liquid cooling passages in a centralized mode and the microelectronic device groups are distributed at the heat conduction insulation board areas corresponded to the heat conduction fill area or the non heat conduction fill area.

Description

The electronic power integrated module minim channel liquid cooling substrate that contains double trapezoid cross section fin
Technical field
The utility model relates to power electronic technology, relates in particular to the integrated technology of device for high-power power electronic, is specially the electronic power integrated module minim channel liquid cooling substrate that contains double trapezoid cross section fin of high-power electric and electronic integration module.
Background technology
Power electronic technology is that electric power, electronics, control intersect the subject that forms, and the contradiction between the complexity of power electronic equipment and the popularity of its application is more and more sharp-pointed, has become the bottleneck of utilization of power technological progress.Integrated circuit is encapsulated in integrated chip inside with topmost difficult point in the Electronic Design and most workload, greatly reduces Design of device, manufacturing and maintenance difficulties.Take history as a mirror; Power electronic technology also need be by " integrated " thought; Solve at integration module the technological difficulties problem and the main design work of aspects such as the components and parts that run in the power electronic equipment design process, circuit, control, electromagnetism, material, heat transfer inner; So that simplify the design of application system, make it become the strong instrument that the engineer that is engaged in different industries, possesses basic skills can control [1]
The core of power electronics integrated technology be the development various electronic power integrated modules (Integrated Power Electronics Module, IPEM).The IPEM of conceptization is modules of a three-dimensional structure, and it has very high power density and good electric property, integrated passive components such as main circuit, driving and control circuit, transducer and magnetic cell.Simultaneously, such module can be by automated manufacturing and production, its cost thereby reduction greatly.But to realize that under present technical conditions so fully-integrated electric power electronic module is unusual difficulty, so academia is divided into two kinds of active IPEM and passive IPEM with IPEM, studies respectively.Active IPEM mainly realizes the integrated of parts such as power device, Drive and Control Circuit and transducer; Passive IPEM mainly realizes the integrated of passive components such as magnetic cell, capacitor.Active IPEM can be divided into the monolithic integration module again and mix integration module.The monolithic integration module refers to adopt the processing method of semiconductor integrated circuit that the power device in the Power Electronic Circuit, driving, control and protective circuit are produced on the same silicon chip, has embodied the notion of monolithic system (SOC).The integrated level of this integration mode is the highest; Be fit in enormous quantities, automated manufacturing; Can reduce cost very effectively; Reduce volume and weight, but the manufacturing process difference of the main circuit component of high pressure, big electric current and other low pressure, little current circuit element is bigger, also has high pressure isolating problem, heat transfer problem etc. in addition.Therefore, the integrated difficulty of monolithic is very big.Mix integration module and adopt the technological means that encapsulates, a plurality of silicon chips that comprise power device, driving, protection and control circuit are respectively enclosed in the same module, formation has partial or complete function and relatively independent unit.This integrated approach can solve problems such as combination and the high voltage isolation between the circuit of different process preferably, has higher integrated level, also can reduce volume and weight more effectively, is the integrated main flow mode of power electronics [2] [3]But remaining at distributed constant, electromagnetic compatibility, high efficiency and heat radiation etc. at present, this mixing integrated approach has more highly difficult technical problem.
Integrated is the topmost developing direction of power electronic technology.No matter no matter is active IPEM or passive IPEM, be monolithic integration module or mixing integration module also, and they all are used for handling energy, and its power consumption is higher than the integrated circuit that is used for information processing far away.KP500 type thyristor, when its on-state average current be 500A, when the angle of flow is 120 electrical degrees, dissipation power can reach 1200W.Generally be that 2,4 or 6 power devices are integrated into a module.After integrated, the bulk density of power loss sharply strengthens, and the heating, the problem of temperature rise that are caused by power consumption are outstanding unusually, and this is directly connected to the reliability service of module.Many performance parameters of electronic device raise with temperature and worsen, and for example the reverse current of PN junction raises with temperature and presses the index law increase, and the turn-off time of bipolar devices raises with temperature and prolongs, and breakover voltage can raise with temperature and reduce., the power consumption of semiconductor device will cause thermally labile and thermal breakdown when surpassing its critical value.For power semiconductor chip, maximum permissible temperature can reach 150 ℃; Driving, protective circuit are made up of various integrated circuits, and commercial integrated circuit allowable temperature is 70 ℃, and the industrial integrated circuit allowable temperature is 85 ℃.Because power circuit is very near apart from Drive Protecting Circuit in integrated IPEM, power circuit will directly have influence on the operate as normal of Drive Protecting Circuit to the heat transfer of Drive Protecting Circuit.If power circuit does not reach the Drive Protecting Circuit of prescribing a time limit on its working temperature as yet and just reached its working temperature upper limit, the working temperature upper limit of just necessary power-limiting circuit guarantees that all devices all are no more than the working temperature upper limit of himself.Thermal control is one of all kinds of electronic power integrated modules general character key technology that all must face.
For discrete power electronic device, the type of cooling commonly used have the cooling of free convection cooling, forced air, recirculated water cooling, flowing water cooling, recycle oil cooling, oil but, heat-pipe radiator cooling etc.China's utility application 200910075814.0 has provided a kind of two-side water cooling substrate that is used for current transformator power module; China's granted patent 200710035082.3 has provided a kind of method of improving large power heat pipe radiator and heater element contact heat resistance; China utility application 201010258174.X has provided a kind of power module assembly with stagger arrangement coolant channel.
Relevant scholar has launched actively, has in depth studied the thermal control problem in the power electronics integrated technology both at home and abroad.Surplus Xiao Ling, Ceng Xiangjun etc. provided a kind of hybrid package electronic power integrated module concrete design and primary study power circuit to the Drive Protecting Circuit influence of conducting heat [4]This module mainly is made up of power circuit and Drive Protecting Circuit.Power circuit be welded on apply the copper ceramic wafer (Direct Bonded Copper, DBC) on, DBC is welded on the copper base again.Cover the thick silicon gel of 4.8mm on the power circuit, (Printed Circuit Board PCB) carries Drive Protecting Circuit on the silicon gel, directly to place a printed circuit board.Plastic capsule in addition around the module.The radiator of the heat major part that power circuit produces through being installed in the copper base bottom sheds with the mode of free convection and radiation, and another fraction sheds through the upper surface of PCB.Adopt finite element analysis software to set up correct thermal model for the hybrid package electronic power integrated module; Under different power circuit caloric value and different copper base bottom surface radiating condition, according to the maximum temperature on measurable power device of this model and the Drive Protecting Circuit PCB.Author's analysis result explanation; Power device is 0.45 ℃/W to the thermal resistance between the interior copper base bottom surface of module; Drive Protecting Circuit PCB is influenced significantly by the heat transfer of power circuit, under the situation of Natural Heat Convection, when the temperature of power device reaches 85 ℃ of left and right sides; The last maximum temperature of PCB is near 70 ℃, and this moment, the caloric value of power device was 45W.Bear is founded the state and waits to the large power power electronic appliance heat radiation cooling down of high heat flux load; Small-sized gravity type flat heat pipe evaporator to have micro-channel augmentation of heat transfer face is a research object; The nano-fluid of forming with water-copper oxide nanometer particle is a working medium, under different operating pressures and different nano-fluid concentration, the The Performance for Boiling Heat Transfer and the critical heat flux of flat-plate heat pipe evaporator has been carried out experimental study [5]Timothy J etc. has provided a kind of technical scheme of utilizing hot pipe technique that IPEM is cooled off [6]T.Tilford, Seung-Yo Lee etc. utilize Finite Element Method to analyze to the thermal stress of active, passive IPEM and to the influence of module performance respectively [7] [8]Dustin A etc. utilizes outside observable temperature to estimate electric power electronic module power device junction temperature, through power device switching frequency and current controlling the power device junction temperature is implemented ACTIVE CONTROL [9]Scholars such as C.M.Johnson, Przemyslaw R, Skandakumaran P have also carried out quantitative analysis and design to IPEM liquid cools scheme [10] [11]
The liquid cools scheme belongs to active heat sink; In time the heat that device produces is taken away from heat sink through certain high heat conductance medium (like deionized water, liquid nitrogen etc.); Make heat sink being operated in as much as possible under the inferior hot saturation condition; To keep heat sink surface temperature approximately constant, its thermal resistance is much smaller than passive heat sink thermal resistance.The performance of liquid cooling system depends on that the physical dimension, cooling fluid of heat dissipation channel in factors such as the surface area of the flow velocity of passage, heat radiation wing, cooling wind speed, optimize the heat dispersion that above factor can improve system.Because narrow passage and low relatively flow velocity forms turbulent flow, microchannel heat sink has high heat dispersion than common radiator.The thermal resistance of general active heat sink approximately is dozens or even hundreds of/one of passive heat sink thermal resistance, and the micro-channel heat sink thermal resistance is the 1/50-1/200 of passive heat sink thermal resistance, therefore receives the extensive concern of Chinese scholars.Shao Baodong etc. are based on the thermal resistance network model, have set up the Model for Multi-Objective Optimization of microflute cooling heat sink with thermal resistance and pressure drop as target function, adopt the SQP method that the physical dimension of microflute has been carried out optimal design.For the cooling length and width is chip heat sink of 100W for 6mm, power consumption respectively, optimizes back microflute width and highly is respectively 120 μ m and 815 μ m, and corresponding entire thermal resistance is 0.413K/W.Adopt computational fluid dynamics (CFD) method to carry out numerical simulation to the microflute cooling heat sink after optimizing.The result of analog result and thermal resistance network model prediction coincide finely [12]Curamik electronics, inc. discloses a kind of liquid cooling DBC microchannel board structure [13], the cooler that adopts AIN pottery and MCA to combine, the thermal resistance<0.03K/W of itself and chip, heat dissipation capacity can reach 2kW/inch 2Many scholars such as J.Li further investigate design, characteristic, emulation, experiment, measurement, the optimization of micro-channel heat sink [14]-[26]
China's utility application 201010589169.7 has provided a kind of power electronic substrate of direct substrate cooling; China's utility application 201110045932.4 has provided a kind of power module substrate and manufacturing approach thereof, has carried this substrate and the power model of radiator; China's utility application 201010285379.7 has provided a kind of method that is used to make circuit substrate assembly and power model; China's utility application 201110085813.1 has provided high-power substrate of a kind of wiring board and radiator high effective integration and preparation method thereof.
The microchannel heat sink of rectangularl runner structure has better heat radiating effect, but directly uses it for the substrate of electronic power integrated module, has following two technical problems.One of which, long, straight, narrow rectangle minim channel blocks easily; Its two, just because of its good effect of heat exchange, so fluid exists than big-difference in the inlet and the temperature in exit.This will cause each power electronic device different because of its geometric position of living in, and temperature rise exists than big difference, poor temperature uniformity.Under the identical power consumption prerequisite, be arranged in the temperature rise that power electronic device temperature rise near the fluid intake place is lower than near the power electronic device exit.Generally speaking, substrate and module are produced respectively, for substrate production person, the distribution of power electronic device on substrate be at random, uncertain.Substrate production person must guarantee that the temperature rise of all devices all is lower than permissible value on the substrate under the even heat load prerequisite of supposition.This just certainly will force substrate production person to confirm the heat load that substrate is allowed by the temperature rise of temperature rise highest point that is fluid outlet power electronic device.So, then be arranged in all the other regional power electronic device temperature rises of substrate and have big nargin.Near the cooling medium inlet, the power electronic device margin of temperature rise is big more more.This nargin is unnecessary, but it is a cost to increase the flowpath pressure loss.
List of references:
[1] Wang Zhaoan, Yang Xu, Wang Xiaobao. the present situation of power electronics integrated technology and developing direction [J]. power electronic technology, 2003 (5), 90-94
[2] Gu Yilei, Tang Jianxin, Lv Zhengyu, money illumination. some new approaches [J] of power electronic system integrated technology development. power electronic technology, 2005 (6), 141-144
[3] Hu Lei, He Xiangning. disperse autonomous control [J] based on bionic power electronic system. Proceedings of the CSEE, 2005 (17), 21-26
[4] surplus Xiao Ling, Ceng Xiangjun, Yang Xu, Feng Quanke. the heat transfer research [J] in the hybrid package electronic power integrated module. XI AN JIAOTONG UNIVERSITY Subject Index, 2004 (3), 258-261
[5] bear is founded the state, Liu Zhenhua. nano-fluid The Performance for Boiling Heat Transfer [J] on the flat-plate heat pipe micro-channel heat-transfer area. and Proceedings of the CSEE, 2005 (23), 105-109
[6]Timothy?J.Martens,Gregory?F.Nellis.Double-Sided?IPEM?Cooling?Using?Miniature?Heat?Pipes,IEEE?TRANSACTIONS?ON?COMPONENTS?AND?PACKAGING?TECHNOLOGIES,VOL.28,NO.4,2005,852-861
[7]T.Tilford,H.Lu?and?C.Bailey.Thermo-mechanical?Modelling?of?Power?Electronics?Module?Structures,2006?Electronics?Packaging?Technology?Conference.p214-219
[8]Seung-Yo?Lee,Willem?Gerhardus?Odendaal,Jacobus?Daniel?van?Wyk.Thermo-Mechanical?Stress?Analysis?for?an?Integrated?Passive?Resonant?Module,IEEE?TRANSACTIONS?ON?INDUSTRY?APPLICATIONS,VOL.40,NO.1,2004,p94-102
[9]Dustin?A.Murdock,Jose?E.Ramos?Torres.Active?Thermal?Control?of?Power?Electronic?Modules,IEEE?TRANSACTIONS?ON?INDUSTRY?APPLICATIONS,VOL.42,NO.2,2006,p552-558
[10]C.M.Johnson,C.Buttay.Compact?Double-Side?Liquid-Impingement-Cooled?Integrated?Power?Electronic?Module,Proceedings?of?the?19th?International?Symposium?on?Power?Semiconductor?Devices?&?ICs?May?27-30,2007?Jeju,Korea,p53-56
[11]Przemyslaw?R.Kaczorowski.Multi-Objective?Design?of?Liquid?Cooled?Power?Electronic?Modules?for?Transient?Operation,19th?IEEE?SEMI-THERM?Symposium,215-222
[12] Shao Baodong, Sun Zhaowei, Wang Lifeng. the application [J] of thermal resistance network model in microflute cooling heat sink optimal design. Jilin University's journal (engineering version), 2007 (6), 1263-1267
[13] ancestor's morning sunlight. the cooling technology of modern power electronic [J]. Semiconductor Converting Technology and electric traction, 2007 (4), 6-12
[14]Skandakumaran?P,Ortega?A,Jamal-Eddine?T,etal.Multi-Layered?SiC?microchanne?heat?sinks-modeling?and?experiment[C],2004?Inter?Society?Conference?on?Thermal?Phenomena
[15]J.Li?a,G.P.Peterson.3-Dimensional?numerical?optimization?of?silicon-based?high?performance?parallel?microchannel?heat?sink?with?liquid?flow,International?Journal?of?Heat?and?Mass?Transfer?50(2007)2895-2904
[16]Re′mi?Revellin,John?R.Thome.A?theoretical?model?for?the?prediction?of?the?critical?heat?flux?in?heated?microchannels,International?Journal?of?Heat?and?Mass?Transfer?51(2008)1216-1225
[17]K.Vafai*,A.-R.A.Khaled.Analysis?of?flexible?microchannel?heat?sink?systems,International?Journal?of?Heat?and?Mass?Transfer?48(2005)1739-1746
[18]Devdatta?P.Kulkarni*,Debendra?K.Das.Analytical?and?numerical?studies?on?microscale?heat?sinks?for?electronic?applications,Applied?Thermal?Engineering?25(2005)2432-2449
[19]Dong-Kwon?Kim,Sung?Jin?Kim.Averaging?approach?for?microchannel?heat?sinks?subject?to?the?uniform?wall?temperature?condition,International?Journal?of?Heat?and?Mass?Transfer?49(2006)695-706
[20]Y.S.Muzychka.Constructal?design?of?forced?convection?cooled?microchannel?heat?sinks?and?heat?exchangers,International?Journal?of?Heat?and?Mass?Transfer?48(2005)3119-3127
[21]Zhigang?Li,Xiulan?Huai.Effects?of?thermal?property?variations?on?the?liquid?flow?and?heat?transfer?in?microchannel?heat?sinks,Applied?Thermal?Engineering?27(2007)2803-2814
[22]H.Abbassi.Entropy?generation?analysis?in?a?uniformly?heated?microchannel?heat?sink,Energy?32(2007)1932-1947
[23]Chien-Hsin?Chen.Forced?convection?heat?transfer?in?microchannel?heat?sinks,International?Journal?of?Heat?and?Mass?Transfer?50(2007)2182-2189
[24]Vishal?Singhal,Suresh?V.Garimella.Induction?electrohydrodynamics?micropump?for?high?heat?flux?cooling,Sensors?and?Actuators?A?134(2007)650-659
[25]Leszek?Wojtan,Re′mi?Revellin,John?R.Thome.Investigation?of?saturated?critical?heat?flux?in?a?single?uniformly?heated?microchannel,Experimental?Thermal?and?Fluid?Science?30(2006)765-774
[26]Tailian?Chen,Suresh?V.Garimella.Measurements?and?high-speed?visualizations?of?flow?boiling?of?a?dielectric?fluid?in?a?silicon?microchannel?heat?sink,International?Journal?of?Multiphase?Flow?32(2006)957-971。
The utility model content
The purpose of the utility model provides a kind of electronic power integrated module minim channel liquid cooling substrate that contains double trapezoid cross section fin exactly for addressing the above problem, even its heat exchange efficiency is high, temperature homogeneity is good, also flushing easily after difficult the obstruction.
For realizing above-mentioned purpose, the utility model adopts following technical scheme:
A kind of electronic power integrated module minim channel liquid cooling substrate that contains double trapezoid cross section fin, it comprise two up and down the side all apply the heat conductive insulating plate of copper, by these two heat conductive insulating plate holders in fill area that the liquid cooling channel of centre and Heat Conduction Material or non-Heat Conduction Material form.Said liquid cooling channel is the cavity that has double trapezoid cross section fin array, and the slit between fin constitutes the minim channel network; The heat conductive insulating plate zone corresponding, centralized arrangement power electronic device crowd with said liquid cooling channel; In the heat conductive insulating plate zone corresponding with said Heat Conduction Material or non-Heat Conduction Material fill area, that is power electronic device crowd's adjacent area, centralized arrangement microelectronic component crowd.
Said cavity forms the upper and lower, left and right wall by Heat Conduction Material, constitutes the closed channel of forward and backward opening, at upper wall, the lower wall symmetric arrangement double trapezoid cross section fin array of this passage.Said double trapezoid cross section implication is following: suppose that when being parallel to the said fin of cross section intercepting of two heat conduction copper clad plates, gained upper wall fin cross section or lower wall fin cross section are isosceles trapezoid; Suppose that with perpendicular to the said fin of cross section intercepting of fluid flow direction the time, gained upper wall fin cross section and lower wall fin cross section are all isosceles trapezoid; Suppose with perpendicular to two heat conduction copper clad plates, be parallel to the said fin of cross section intercepting of fluid flow direction, gained upper wall fin cross section, lower wall fin cross section are all rectangle.
Fin is arranged on corresponding upper wall and the lower wall, upper wall and lower wall respectively with corresponding in copper-clad be welded as a whole, self is relative in the fin end of upper wall and lower wall, but leaves the slit each other.Define said fin and be of a size of at fluid flow direction that rib is long, vertical two heat conduction copper clad plate directions are of a size of the rib height, be that rib is thick that then rib is long by confirming with the principle of substrate liquid cooling channel equal in length with the line of the rib cross section hypotenuse mid point of vertical fluid flow direction; At the fluid intake place, said fin rib is thick to be selected in 1/25 to 1/15 scope of rib height; At fluid outlet, rib is thick to be selected in 1/20 to 1/10 scope of rib height; The porch rib is thick be the exit rib thick 50% to 75%.
The utility model is for alleviating existing aforementioned two technical problems of the small runner of rectangle; Improve the power electronic device Distribution of temperature rise uniformity, reduce the possibility that minim channel blocks; Based on the thermal conduction study basic principle; Designed a kind of might as well being referred to as " double trapezoid cross section fin array " structure, this fin array has formed the structure of " double trapezoid cross-sectional passage array ".
Improve heat convection efficient, must catch two basic points.One of which must be derived heat from thermal source fast; Its two, must be delivered to the heat of deriving in the fluid fast.The former not only requires the good heat conductivity of material, and requires this Heat Conduction Material will have enough volumes, quality; The latter not only requires the performance of fluid itself will be suitable for heat convection, and requires to have enough contacts area, enough relative velocities between fluid and the solid.
For electronic power integrated module minim channel liquid cooling substrate; If adopt rectangle fin, rectangularl runner; Then along with the carrying out of Convective Heat Transfer, as far as each fin, depart from cavity upper wall or lower wall more, near the central cross-section of housing depth direction; Its heat conduction amount of bearing is more little, objectively no longer need with the such many Heat Conduction Materials in fin bottom.Reduce the use amount of Heat Conduction Material, just mean and reduced fluid through the caused pressure loss of liquid cooling substrate.For this reason, the said electronic power integrated module minim channel of the utility model liquid cooling substrate does not adopt the described rectangle fin of many documents, is trapezoidal fin then adopt to look along fluid flow direction.That is one of the utility model design fin characteristic is: suppose that gained fin cross section is an isosceles trapezoidal structure to do arbitrary cross section perpendicular to deposited copper ceramic wafer and fluid flow direction.
For electronic power integrated module minim channel liquid cooling substrate; Because to be arranged in temperature rise sign substrate heat dispersion near the power electronic device of fluid issuing position; Be arranged in temperature rise near the power electronic device of entrance area and exist bigger, the unnecessary nargin of allowing, objectively allow to reduce fin material usage near the fluid intake place.Reduce the fin material usage, meaning can increase the runner effective area, reduces the pressure loss, reduces the possibility that conduit blocks.Near fluid intake, then allow the fin material usage few more more.For this reason, two of the utility model design fin characteristic is: suppose to do arbitrary cross section to be parallel to deposited copper ceramic wafer, gained fin cross section is an isosceles trapezoidal structure.
By above-mentioned design, the vertical fluid flow direction is appointed and is made cross section in process fluid flow, and then the centre flow area is bigger on short transverse, and this helps reducing the substrate pressure loss; Near fluid issuing, runner is narrow more, flow velocity is high more more, and convection transfer rate is also just high more, and this can remedy the negative effect that fluid temperature (F.T.) raises and brought, and helps improving the temperature homogeneity of the power electronic device at diverse location place on the liquid cooling substrate; Simultaneously, because streamwise, runner more and more narrow, flow velocity are increasingly high, can form vertical whirlpool at the left and right wall of fin, help the raising of convection transfer rate; Because more near fluid intake, passage is wide more, in case block, can be temporarily that fluid flow direction is reverse, the flush fluid passage.At this moment, fluid is from slot inflow, wide mouthful of outflow, and developing result is better.Also can be in the substrate use, according to concrete needs, the timing controlled fluid oppositely flows in short-term, the flush fluid passage.
Wire-cut Electrical Discharge Machining, spark-erosion sinking processing are to utilize the pulse feature sparkover between tool-electrode and the piece pole to produce high temperature, workpiece material fusing and vaporization are processed; It is advantageous that and do not have macroscopical active force in the processing; And can process the electric conducting material of high rigidity, the processing yardstick can be as small as 30 microns, and machining accuracy is high; Surface roughness can reach micron order, and it does not need the three dimensional mask version.Above-mentioned minim channel structural design can be fit to select the fine electric spark wire cutting method to process; Also can make shaped electrode with electric spark wire cutting method earlier, process with the electric spark manufacturing process then.
The utility model with the beneficial effect that the rectangle minim channel is compared is: heat exchange efficiency is high during the equal pressure loss; The pressure loss is little during equal heat exchange efficiency; Device temperature good uniformity under the equal power consumption; Be difficult for blocking; Even block also than being easier to flushing; Simple in structure, fin is not yielding, good stability; Can not cause the obvious increase of cost.
Description of drawings
Fig. 1 is the structural representation of the utility model;
Fig. 2 is to make arbitrary cross section perpendicular to deposited copper ceramic wafer and fluid flow direction, the cross section of the single fin of gained;
Fig. 2 a is for doing arbitrary cross section, the cross section of the single fin of gained to be parallel to deposited copper ceramic wafer;
Fig. 2 b is the end view of single fin;
Fig. 3 is to do arbitrary cross section perpendicular to deposited copper ceramic wafer and fluid flow direction, fin plate portion fin cross section under the gained;
Fig. 3 a is for doing arbitrary cross section, fin plate portion fin cross section under the gained to be parallel to deposited copper ceramic wafer and fluid flow direction;
Fig. 3 b is the end view of following fin plate portion fin;
After Fig. 4 was last fin plate, fin plate, Zuo Bi, right wall synthesize the fluid passage down, the master of part fin looked sketch map;
Fig. 4 a is the schematic top plan view of Fig. 4;
Fig. 4 b is the schematic side view of Fig. 4.
Wherein, 1. power electronic device crowd, 2. microelectronic component crowd, 3. outer copper-clad, 4. in copper-clad, 5. heat conductive insulating layer, 6. cavity, 7. minim channel, 8. fin, 9. fill area.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Among Fig. 1; The minim channel liquid cooling substrate of the described electronic power integrated module of the utility model is a sandwich structure; It has two heat conductive insulating layers 5, and said two heat conductive insulating layer 5 upper and lower sides have outer copper-clad 3 and interior copper-clad 4 respectively, and heat conductive insulating layer 5 is a ceramic wafer.Heat conductive insulating layer 5 applies the copper ceramic wafer with its interior copper-clad 4, outer copper-clad 3 general designations, is called for short DBC.
Comprise by the formed forward and backward both ends open of Heat Conduction Material the cavity 6 of upper and lower, left and right wall sealing between two deposited copper ceramic wafer DBC.Cavity 6 is as the flow channel of cooling liquid, and it comprises fin 8 formed fin arrays with special construction, and this fin array has formed in cavity 6 by what numerous minim channels 7 were formed has a special construction channel array.The outer copper-clad 3 of two deposited copper ceramic wafer DBC is used to weld the required a plurality of electronic devices of formation electronic power integrated module.But when arranging these electronic devices, treat power electronic device that is used for energy control and the microelectronic component that power electronic device is driven, protects, measures, controls with a certain discrimination, because the power consumption of the two has essential distinction.The power electronic device power consumption is high, and microelectronic component is low in energy consumption.With respect to power electronic device, the power consumption almost of microelectronic component can be ignored.On the outer copper-clad 3 of two blocks of DBC plates, longshore current body flow direction centralized arrangement power electronic device crowd 1 is arranged in microelectronic component crowd 2 one or both sides of corresponding power electronic device simultaneously.The geometric position is symmetrical in vertical direction in the power electronic device crowd 1 shared copper-clad zone of following DBC plate the power electronic device crowd 1 of last DBC plate with by centralized arrangement by centralized arrangement.Only between upper and lower power electronic device crowd 1 shared zone, arrange liquid cooling channel, promptly cavity 6.So, can under the identical prerequisite of fluid passageway width, fluid path length be dwindled about 50%.Accordingly, the pressure loss of passage has also reduced about 50%.Fill area 9 Heat Conduction Materials capable of using between the microelectronic component crowd 2 or non-Heat Conduction Material are filled.Fluid directly cools off the power electronic device crowd 1 of high power consumption, cools off the microelectronic component crowd 2 of low-power consumption indirectly through the conduction of heat of DBC.
Comprehensive above-mentioned two characteristics, single fin 8 sketch mapes that the utility model designed are shown in accompanying drawing 2, Fig. 2 a, Fig. 2 b.
The fin array with double trapezoid cross section of the said electronic power integrated module minim channel of the utility model liquid cooling substrate is shown in accompanying drawing 3, Fig. 3 a, Fig. 3 b.3 in accompanying drawing shows and is arranged in cavity 6 lower walls in the accompanying drawing 1, is used to cool off the part fin 8 of DBC plate down.In fact; On the upper and lower wall of accompanying drawing 1 cavity 6, all be distributed with the fin 8 shown in several accompanying drawings 2, and it is identical to be arranged in fin 8 geometries, geometric parameter, the fin quantity of upper and lower wall; The upper and lower wall of cavity 6 constitutes upper and lower symmetrical structure together with the fin of arranging above that 8.Spacing between each fin 8 forms the fluid passage.
All fins 8 height, length are identical; More approaching outlet, fin 8 is thick more.Passage upper wall, lower wall and corresponding interior copper-clad 3 are welded as a whole.Each fin 8 position but leaves the slit between its end against each other, and promptly the height h of each fin 8 is slightly less than 50% of channel height.
Middle part, fin 8 trapezoid cross section thickness with perpendicular to the DBC plate is that rib is thick, and then fluid intake place rib is thick selects in 1/25 to 1/15 scope of rib height; The exit rib is thick to be selected in 1/20 to 1/10 scope of rib height.The porch rib is thick be the exit rib thick 50% to 75%.
A specific embodiment that obtains by above-mentioned execution mode is:
Power electronic device crowd 1 is all 10mm * 100mm with microelectronic component crowd 2 shared region geometry sizes, and corresponding base plan is of a size of 20mm * 100mm; The DBC plate covers copper layer thickness 0.2mm, covers copper layer solder thickness 0.1mm, and DBC plate Al2O3 heat conductive insulating layer thickness is 0.4mm; Fin plate bottom thickness is 0.3mm; The weld layer thickness that DBC covers between copper layer and the fin plate is 0.1mm, and the minim channel height is 2.8mm, and width is 10mm; Account for the half the of substrate 20mm width, its second half microelectronic component is set.Formed whole base plate overall dimension is 20mm * 100mm * 5.6mm.Upper and lower fin plate symmetry respectively is provided with 49 fins 8, and each fin 8 is identical.Each fin 8 longshore current body flow direction length is 100mm; Fin is an isosceles trapezoid on the cross section of vertical fluid flow direction that is the cross section parallel with fluid intake, and trapezoidal height is 1.35mm, and these trapezoidal two ends, porch are respectively 0.09mm, 0.07mm, and these trapezoidal two ends, exit are respectively 0.12mm, 0.1mm; It is the small conduit of two-sided isosceles trapezoid equally that above-mentioned 49 two-sided trapezoidal fins 8 constitute 50 respectively at upper and lower two fin plates; Every long 100mm of conduit, high 1.35mm; Two ends of porch conduit, be respectively 0.11mm, 0.13mm, and two ends of exit conduit are respectively 0.08mm, 0.1mm.Each fin 8 of upper wall each fin 8 and lower wall does not contact, and has the slit of 0.1mm between fin 8 tops, and beneficial effect will be brought into play in this slit when conduit blocks and is not able to do in time back flush.Fluid passage Zuo Bi, right wall thickness are 0.5mm.Result of the test shows; In the even power consumption of power electronic device upper and lower each 900W in zone; The even power consumption of upper and lower each 10W in microelectronics zone, when 40 ℃ of cooling fluid flow 0.02L/s, inlet temperature, outlet temperature is 51.5 ℃; The power electronic device mean temperature is that 137 ℃, minimum temperature are that 135 ℃, maximum temperature are 142.5 ℃, and 66.3 ℃ of microelectronic component mean temperatures, minimum temperature are 70.5 ℃ of 65.5 ℃, maximum temperature; Inlet, outlet pressure reduction are 23KPa.
With the corresponding contrast test of above-mentioned specific embodiment be, only change the fin shape, change above-mentioned double trapezoid cross section fin into the rectangle fin.Fin length direction point midway vertical fluid flow direction is done the cross section in above-mentioned double trapezoid cross section; This isosceles trapezoid cross section waist thickness is 0.095mm; Getting its approximation 0.1mm is rectangle fin thickness; The rectangular fin leaf length, highly, quantity etc. is all consistent with above-mentioned double trapezoid cross section fin, forms the rectangularl runner substrate.Comparative test result is: the power electronic device mean temperature is that 139 ℃, 109 ℃ of minimum temperatures, maximum temperature are 151 ℃, and 71.5 ℃ of microelectronic component mean body temperatures, minimum temperature are 80.5 ℃ of 60 ℃, high fever, and inlet, outlet pressure reduction are 22KPa.
Contrast above-mentioned result of the test, double trapezoid cross section fin particularly all is superior to the rectangle fin aspect the device temperature rise uniformity in the heat exchange effect, and same coolant flow downforce loss does not have obviously to be increased.When with the highest device temperature rise calibration substrate performance, then double trapezoid cross section fin obviously is superior to the rectangle fin.And double trapezoid cross section fin is difficult for stopping up than the rectangle fin, even also be convenient to back flush after stopping up.

Claims (4)

1. electronic power integrated module minim channel liquid cooling substrate that contains double trapezoid cross section fin; It comprises two up and down the side all apply the heat conductive insulating plate of copper, by liquid cooling channel and Heat Conduction Material or the non-Heat Conduction Material fill area of these two heat conductive insulating plate holders in the centre; It is characterized in that; Said liquid cooling channel is the cavity that has double trapezoid cross section fin array, and the slit between fin constitutes minim channel; The heat conductive insulating plate zone corresponding, centralized arrangement power electronic device crowd with said liquid cooling channel; At power electronic device crowd's adjacent area, that is the pairing heat conductive insulating plate of said Heat Conduction Material or non-Heat Conduction Material fill area zone, centralized arrangement microelectronic component crowd.
2. the electronic power integrated module minim channel liquid cooling substrate that contains double trapezoid cross section fin as claimed in claim 1; It is characterized in that; Said cavity forms the upper and lower, left and right wall by Heat Conduction Material, constitutes closed channel, at upper wall, the lower wall symmetric arrangement double trapezoid cross section fin array of this passage; When being parallel to the said fin of cross section intercepting of two heat conduction copper clad plates, gained fin cross section is an isosceles trapezoid; With perpendicular to the said fin of cross section intercepting of fluid flow direction the time, gained fin cross section is an isosceles trapezoid; With perpendicular to two heat conduction copper clad plates, when being parallel to the said fin of cross section intercepting of fluid flow direction, gained fin cross section is a rectangle.
3. the electronic power integrated module minim channel liquid cooling substrate that contains double trapezoid cross section fin as claimed in claim 2; It is characterized in that; Said cavity upper wall and lower wall are respectively with last heat conductive insulating plate, down the interior copper-clad of heat conductive insulating plate is welded as a whole; Fin is arranged on corresponding upper wall and lower wall, and self is relative in the upper end of the lower end of upper wall fin and lower wall fin, but leaves the slit each other.
4. the electronic power integrated module minim channel liquid cooling substrate that contains double trapezoid cross section fin as claimed in claim 3; It is characterized in that it is that rib is thick that said fin is of a size of rib line long, that be of a size of the rib cross section hypotenuse mid point of rib height, vertical fluid flow direction with heat conduction copper clad plate vertical direction at fluid flow direction; Rib length equals substrate liquid cooling channel length; Said fin is selected in thick 1/25 to 1/15 scope at the rib height of fluid intake place rib, and the exit rib is thick to be selected in 1/20 to 1/10 scope of rib height; The porch rib is thick be the exit rib thick 50% to 75%.
CN2012200385354U 2012-02-07 2012-02-07 Power electronic integration module tiny passage liquid cooling substrate with double trapezoid cross section fins Expired - Lifetime CN202476021U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012200385354U CN202476021U (en) 2012-02-07 2012-02-07 Power electronic integration module tiny passage liquid cooling substrate with double trapezoid cross section fins

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012200385354U CN202476021U (en) 2012-02-07 2012-02-07 Power electronic integration module tiny passage liquid cooling substrate with double trapezoid cross section fins

Publications (1)

Publication Number Publication Date
CN202476021U true CN202476021U (en) 2012-10-03

Family

ID=46924139

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012200385354U Expired - Lifetime CN202476021U (en) 2012-02-07 2012-02-07 Power electronic integration module tiny passage liquid cooling substrate with double trapezoid cross section fins

Country Status (1)

Country Link
CN (1) CN202476021U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102548367A (en) * 2012-02-07 2012-07-04 山东大学 Small passageway liquid cooling base board of power electronic integration module with double-trapezoid cross section fins
CN106785190A (en) * 2016-11-29 2017-05-31 重庆云天化瀚恩新材料开发有限公司 Conductive structure for electrokinetic cell radiating and preparation method thereof
WO2018000848A1 (en) * 2016-06-29 2018-01-04 华为技术有限公司 Circuit board for communication device and heat dissipation method, communication device
CN113224893A (en) * 2020-01-21 2021-08-06 上海电力大学 Optimization method for cooling water channel of vehicle-mounted permanent magnet synchronous motor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102548367A (en) * 2012-02-07 2012-07-04 山东大学 Small passageway liquid cooling base board of power electronic integration module with double-trapezoid cross section fins
CN102548367B (en) * 2012-02-07 2014-07-02 山东大学 Small passageway liquid cooling base board of power electronic integration module with double-trapezoid cross section fins
WO2018000848A1 (en) * 2016-06-29 2018-01-04 华为技术有限公司 Circuit board for communication device and heat dissipation method, communication device
CN106785190A (en) * 2016-11-29 2017-05-31 重庆云天化瀚恩新材料开发有限公司 Conductive structure for electrokinetic cell radiating and preparation method thereof
CN106785190B (en) * 2016-11-29 2019-03-08 重庆云天化瀚恩新材料开发有限公司 Conductive structure and preparation method thereof for power battery heat dissipation
CN113224893A (en) * 2020-01-21 2021-08-06 上海电力大学 Optimization method for cooling water channel of vehicle-mounted permanent magnet synchronous motor
CN113224893B (en) * 2020-01-21 2023-03-28 上海电力大学 Optimization method for cooling water channel of vehicle-mounted permanent magnet synchronous motor

Similar Documents

Publication Publication Date Title
CN102548367B (en) Small passageway liquid cooling base board of power electronic integration module with double-trapezoid cross section fins
CN104465562A (en) Chain type staggered micro-channel structure
CN110164835A (en) A kind of manifold-type labyrinth microchannel minitype radiator
CN202476021U (en) Power electronic integration module tiny passage liquid cooling substrate with double trapezoid cross section fins
CN104051952A (en) Internal micro-channel heat sink
van Erp et al. A manifold microchannel heat sink for ultra-high power density liquid-cooled converters
Liu et al. Direct liquid cooling For IGBT power module
Ali et al. Thermo-fluid characteristics of microchannel heat sink with multi-configuration NACA 2412 hydrofoil ribs
Xiang et al. High-performance thermal management system for high-power LEDs based on double-nozzle spray cooling
CN102655129B (en) Miniature-channel liquid cooling substrate of integrated power electronics module with the moire fringe effect
Al-Hinaai et al. A novel packaging with direct dielectric liquid cooling for high voltage power electronics
Lad et al. High power density thermal management of discrete semiconductor packages enabled by additively manufactured hybrid polymer-metal coolers
Deng et al. Numerical and experimental study on cooling high power chips of data centers using double-side cooling module based on mini-channel heat sink
Vladimirova et al. Drift region integrated microchannels for direct cooling of power electronic devices: Advantages and limitations
CN202534643U (en) IPEM micro-channle liquid cooling substrate having Moire fringe effect
Chen et al. Direct liquid cooling of a stacked multichip module
CN109152310A (en) A kind of more circular arc microchannel heat sinks
Yuruker et al. A vertically enhanced manifold microchannel system for thermal management of power electronics
Han et al. Thermal analysis of microfluidic cooling in processing-in-3D-stacked memory
CN114664768A (en) Fin and rib plate combined type micro-channel radiator
Cong et al. Investigation on the heat dissipation of high heat flux chip array by fractal microchannel networks
CN113446883A (en) Double-fluid loop staggered wave type micro-channel radiator based on elastic turbulence
Li et al. Multi-Parameters Optimization for Diamond Microchannel Heat Sink
CN209497788U (en) A kind of more circular arc microchannel heat sinks
Hu et al. Numerical simulation and optimization of heat dissipation structure for high power insulated gate bipolar transistor (IGBT)

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
AV01 Patent right actively abandoned

Granted publication date: 20121003

Effective date of abandoning: 20140702

RGAV Abandon patent right to avoid regrant