CN102548367B - Small passageway liquid cooling base board of power electronic integration module with double-trapezoid cross section fins - Google Patents
Small passageway liquid cooling base board of power electronic integration module with double-trapezoid cross section fins Download PDFInfo
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Abstract
The invention discloses a small passageway liquid cooling base board of a power electronic integration module with double-trapezoid cross section fins. The small passageway liquid cooling base board of the power electronic integration module with the double-trapezoid cross section fins comprises two heat conduction insulating boards, a liquid cooling passageway and a heat conduction material or non-heat conduction material filling area, wherein the upper side surfaces and the lower side surfaces of the two heat conduction insulating boards are coated with copper, the liquid cooling passageway is clamped between the two heat conduction insulating boards and is a cavity which is provided with a double-trapezoid cross section fin array, and a small passageway network is formed by clearances between the fins; and the area of the heat conduction insulating board corresponding to the liquid cooling passageway is concentratedly provided with a power electronic device group, and the area of the heat conduction insulating board corresponding to the heat conduction material or non-heat conduction material filling area is provided with micro electronic device group. The small passageway liquid cooling base board of the power electronic integration module with the double-trapezoid cross section fins disclosed by the invention has the advantages that the heat exchange efficiency is high, the pressure loss is small, the temperature uniformity of a device is good under the same power, the blocking is not easy to occur, the cleaning is easy after the blocking, the structure is simple, the fins are not easy to deform, the stability is good, and the cost is low.
Description
Technical field
The present invention relates to power electronic technology, relate in particular to the integrated technology of device for high-power power electronic, be specially the electronic power integrated module minim channel liquid cooling base containing double trapezoid cross section fin of high-power electric and electronic integration module.
Background technology
Power electronic technology is that electric power, electronics, control intersect the subject forming, and the contradiction between the complexity of power electronic equipment and the popularity of its application is more and more sharp-pointed, has become the bottleneck of utilization of power technological progress.Topmost difficult point in Electronic Design and most workload are encapsulated in integrated chip inside by integrated circuit, greatly reduces design, manufacture and the maintenance difficulties of device.Take history as a mirror, power electronic technology also need to be by " integrated " thought, the technological difficulties problem of the aspects such as the components and parts that run in power electronic equipment design process, circuit, control, electromagnetism, material, heat transfer and main design work are solved in integration module inside, to simplify the design of application system, the powerful that the engineer who become and be engaged in different industries, possesses basic skills can control
[1].
The core of power electronics integrated technology is the various electronic power integrated modules of development (Integrated Power Electronics Module, IPEM).The IPEM of conceptization is modules of a three-dimensional structure, and it has very high power density and good electric property, the integrated passive components such as main circuit, driving and control circuit, transducer and magnetic cell.Meanwhile, such module can be by automated manufacturing and production, its cost thereby greatly reduction.But it is very difficult will realizing so fully-integrated electric power electronic module under current technical conditions, so IPEM is divided into two kinds of active IPEM and passive IPEM by academia, study respectively.Active IPEM mainly realizes the integrated of power device, Drive and Control Circuit and sensor parts; Passive IPEM mainly realizes the integrated of the passive component such as magnetic cell, capacitor.Active IPEM can be divided into monolithic integration module again and mix integration module.Monolithic integration module, the processing method that refers to adopt semiconductor integrated circuit on same silicon chip, has embodied the concept of monolithic system (SOC) by the power device in Power Electronic Circuit, driving, control and protection circuit production.The integrated level of this integration mode is the highest, be applicable in enormous quantities, automated manufacturing, can very effectively reduce costs, reduce volume and weight, but the manufacturing process difference of the main circuit component of high pressure, large electric current and other low pressure, little current circuit element is larger, also has in addition high pressure isolating problem, heat transfer problem etc.Therefore, the integrated difficulty of monolithic is very large.Mix integration module and adopt the technological means encapsulating, the multiple silicon chips that comprise respectively power device, driving, protection and control circuit are enclosed in same module, form and there is partial or complete function and relatively independent unit.This integrated approach can solve the problem such as combination and high-voltage isolating between the circuit of different process preferably, has higher integrated level, also can more effectively reduce volume and weight, is the integrated main way of power electronics
[2] [3].But remaining at present at distributed constant, electromagnetic compatibility, high efficiency and heat radiation etc., this mixing integrated approach there is more highly difficult technical problem.
Integrated is the topmost developing direction of power electronic technology.No matter be active IPEM or passive IPEM, be no matter also monolithic integration module or mix integration module, they are all used for processing energy, and its power consumption is far away higher than the integrated circuit for information processing.KP500 type thyristor, when its on-state average current is 500A, the angle of flow while being 120 electrical degree, dissipation power can reach 1200W.Generally that 2,4 or 6 power devices are integrated into a module.After integrated, the bulk density of power loss sharply strengthens, and the heating, the problem of temperature rise that are caused by power consumption are extremely outstanding, and this is directly connected to the reliability service of module.Many performance parameters of electronic device raise and worsen with temperature, and the reverse current of for example PN junction raises and presses exponential law increase with temperature, and the turn-off time of bipolar devices raises and extends with temperature, and breakover voltage can raise and reduce with temperature.In the time that exceeding its critical value, the power consumption of semiconductor device will cause thermally labile and thermal breakdown.For power semiconductor chip, maximum permissible temperature can reach 150 DEG C; Driving, protective circuit are made up of various integrated circuits, and commercial integrated circuit allowable temperature is 70 DEG C, and industrial integrated circuit allowable temperature is 85 DEG C.Because power circuit in integrated IPEM is very near apart from Drive Protecting Circuit, power circuit will directly have influence on the normal work of Drive Protecting Circuit to the heat transfer of Drive Protecting Circuit.Prescribe a time limit Drive Protecting Circuit with regard to having reached its working temperature upper limit if power circuit not yet reaches in its working temperature, with regard to the working temperature upper limit of necessary power-limiting circuit, ensure that all devices are all no more than the working temperature upper limit of himself.Thermal control is one of all kinds of electronic power integrated modules Key Common Technologies that all must face.
For discrete power electronic device, the conventional type of cooling has that free convection is cooling, forced air is cooling, circulating water, flowing water is cooling, recycle oil is cooling, oil but, heat-pipe radiator is cooling etc.Chinese invention patent application 200910075814.0 has provided a kind of two-side water cooling substrate for current transformator power module; China's granted patent 200710035082.3 has provided a kind of method of improving large power heat pipe radiator and heater element contact heat resistance; Chinese invention patent application 201010258174.X has provided a kind of power module assembly with stagger arrangement coolant channel.
Both at home and abroad about scholar has launched actively, has in depth studied the thermal control problem in power electronics integrated technology.Remaining Xiao Ling, Zeng Xiangjun etc. provided a kind of specific design of hybrid integrated power electronic module primary study power circuit to Drive Protecting Circuit Heat Transfer Influence
[4].This module is mainly made up of power circuit and Drive Protecting Circuit.Power circuit is welded on and applies copper ceramic wafer (Direct Bonded Copper, DBC) above, and DBC is welded on again on copper base.On power circuit, cover the silicon gel that 4.8mm is thick, on silicon gel, directly place a printed circuit board (Printed Circuit Board, PCB) and carry Drive Protecting Circuit.Module surrounding is plastic capsule in addition.The heat major part that power circuit produces sheds in the mode of free convection and radiation by the radiator that is arranged on copper base bottom, and another fraction sheds by the upper surface of PCB.Adopting finite element analysis software is that hybrid integrated power electronic module has been set up correct thermal model; under different power circuit caloric values and different copper base bottom surface radiating condition, according to the maximum temperature on the measurable power device of this model and Drive Protecting Circuit PCB.Author's analysis result explanation; power device is 0.45 DEG C/W to the thermal resistance between the interior copper base of module bottom surface; Drive Protecting Circuit PCB is subject to the Heat Transfer Influence of power circuit remarkable; the in the situation that of Natural Heat Convection; when the temperature of power device reaches 85 DEG C of left and right; maximum temperature on PCB has approached 70 DEG C, and now the caloric value of power device is 45W.Bear is founded the state and waits for the lower large power power electronic appliance cooling of high heat flux load, taking the small-sized gravity type flat heat pipe evaporator with micro-channel augmentation of heat transfer face as research object, the nano-fluid forming taking water-copper oxide nanometer particle is as working medium, and the Performance for Boiling Heat Transfer and critical heat flux to flat-plate heat pipe evaporator under different operating pressures and different nano-fluid concentration have been carried out experimental study
[5].Timothy J etc. has provided a kind of hot pipe technique that utilizes IPEM has been carried out to cooling technical scheme
[6].T.Tilford, Seung-Yo Lee philosophy utilize the thermal stress of Finite Element Method on active, passive IPEM and the impact of module performance are analyzed
[7] [8].Dustin A etc. utilizes outside observable temperature to estimate electric power electronic module power device junction temperature, by the control of power device switching frequency and operating current, power device junction temperature is implemented to ACTIVE CONTROL
[9].The scholars such as C.M.Johnson, Przemyslaw R, Skandakumaran P have also carried out quantitative analysis and design to IPEM liquid cools scheme
[10] [11].
Liquid cools scheme belongs to active heat sink, the heat in time device being produced by certain high heat conductance medium (as deionized water, liquid nitrogen etc.) is taken away from heat sink, make heat sink being operated in as much as possible under sub-hot saturation condition, to maintain heat sink surface temperature approximately constant, its thermal resistance is much smaller than passive heat sink thermal resistance.The performance of liquid cooling system depends on that the physical dimension, cooling fluid of heat dissipation channel are in the flow velocity of passage, the factor such as surface area, cooling wind speed of radiating fin, optimizes above factor and can improve the heat dispersion of system.Because narrow passage forms turbulent flow with relative low flow velocity, microchannel heat sink has high heat dispersion than common radiator.The thermal resistance of general active heat sink be approximately passive heat sink thermal resistance dozens or even hundreds of/mono-, and micro-channel heat sink thermal resistance is the 1/50-1/200 of passive heat sink thermal resistance, is therefore subject to the extensive concern of Chinese scholars.Shao Baodong etc. are based on thermal resistance network model, have set up the Model for Multi-Objective Optimization of microchannel cooling heat sink using thermal resistance and pressure drop as target function, adopt sequential quadratic programming method to be optimized design to the physical dimension of microflute.Each heat sink for 6mm, the power consumption chip that is 100W for cooling length and width, width of mini longitudinal channels and be highly respectively 120 μ m and 815 μ m after optimizing, corresponding entire thermal resistance is 0.413K/W.Adopt computational fluid dynamics (CFD) method to carry out numerical simulation to the microchannel cooling heat sink after optimizing.The result of analog result and thermal resistance network model prediction is coincide finely
[12].Curamik electronics, inc. discloses a kind of liquid cooling DBC microchannel board structure
[13], the cooler that adopts AIN pottery and Micro Channel Architecture to combine, the thermal resistance < 0.03K/W of itself and chip, heat dissipation capacity can reach 2kW/inch
2.Design, characteristic, emulation, experiment, measurement, the optimization of many scholars such as J.Li to micro-channel heat sink conducts in-depth research
[14]-[26].
Chinese invention patent application 201010589169.7 has provided the cooling power electronics substrate of a kind of direct substrate; Chinese invention patent application 201110045932.4 has provided a kind of power module substrate and manufacture method thereof, has carried this substrate and the power model of radiator; Chinese invention patent application 201010285379.7 has provided a kind of method for the manufacture of circuit substrate assembly and power model; Chinese invention patent application 201110085813.1 has provided high-power base of a kind of wiring board and radiator high effective integration and preparation method thereof.
The microchannel heat sink of rectangularl runner structure has good radiating effect, but directly uses it for the substrate of electronic power integrated module, has following two technical problems.One, long, straight, narrow rectangle minim channel easily blocks; Its two, just because of its good effect of heat exchange, so fluid exists larger difference in the temperature in entrance and exit.This will cause each power electronic device because of its geometric position of living in difference, and temperature rise exists bigger difference, poor temperature uniformity.Under identical power consumption prerequisite, be arranged in the power electronic device temperature rise that approaches fluid intake place lower than near the temperature rise of power electronic device exit.Generally speaking, substrate and module are produced respectively, and for substrate production person, the distribution of power electronic device on substrate is random, uncertain.Substrate production person must ensure that on substrate, the temperature rise of all devices is all lower than permissible value under the even heat load prerequisite of supposition.This just certainly will force substrate production person to determine by the temperature rise of temperature rise highest point that is fluid outlet power electronic device the heat load that substrate is allowed.There is larger nargin in the power electronic device temperature rise that so, is arranged in all the other regions of substrate.More approach cooling medium entrance, power electronic device margin of temperature rise is larger.This nargin is unnecessary, but it loses as cost to increase flowpath pressure.
List of references:
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[2] Gu Yilei, Tang Jianxin, Lv Zhengyu, money illumination. some new approaches [J] of power electronic system integrated technology development. power electronic technology, 2005 (6), 141-144
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[4] remaining Xiao Ling, Zeng Xiangjun, Yang Xu, Feng Quanke. the heat transfer research [J] in hybrid integrated power electronic module. XI AN JIAOTONG UNIVERSITY Subject Index, 2004 (3), 258-261
[5] bear is founded the state, Liu Zhenhua. Boiling Heat Transfer Characteristics of Nanofluids on Flat Heat Pipe Evaporator With Micro-grooved Surface [J]. and Proceedings of the CSEE, 2005 (23), 105-109
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Summary of the invention
Object of the present invention, exactly for addressing the above problem, provides a kind of electronic power integrated module minim channel liquid cooling base containing double trapezoid cross section fin, even if its heat exchange efficiency is high, temperature homogeneity good, also easily flushing after difficult the obstruction.
For achieving the above object, the present invention adopts following technical scheme:
Containing an electronic power integrated module minim channel liquid cooling base for double trapezoid cross section fin, it comprises all heat conductive insulating plate, the liquid cooling channel being clipped in the middle by these two blocks of heat conductive insulating plates and the Heat Conduction Material of deposited copper or fill areas of non-Heat Conduction Material formation of two upper and lower sides.Described liquid cooling channel is the cavity with double trapezoid cross section fin array, and the gap between fin forms minim channel network; The heat conductive insulating plate region corresponding with described liquid cooling channel, centralized arrangement power electronic device group; In the heat conductive insulating plate region corresponding with described Heat Conduction Material or non-Heat Conduction Material fill area, that is power electronic device group's adjacent area, centralized arrangement microelectronic component group.
Described cavity forms upper and lower, left and right wall by Heat Conduction Material, forms the closed channel of forward and backward opening, is arranged symmetrically with double trapezoid cross section fin array at upper wall, the lower wall of this passage.Described double trapezoid cross section implication is as follows: when the cross section of supposing to be parallel to two heat conduction copper clad plates intercepts described fin, gained upper wall fin cross section or lower wall fin cross section are isosceles trapezoid; Suppose that when intercepting described fin perpendicular to the cross section of fluid flow direction, gained upper wall fin cross section and lower wall fin cross section are all isosceles trapezoid; Suppose to intercept described fin perpendicular to two heat conduction copper clad plates, the cross section that is parallel to fluid flow direction, gained upper wall fin cross section, lower wall fin cross section are all rectangle.
Fin is arranged on corresponding upper wall and lower wall, upper wall and lower wall respectively with corresponding in copper-clad be welded as a whole, self is relative in the fin end of upper wall and lower wall, but leaves each other gap.Define that described fin is of a size of at fluid flow direction that rib is long, vertical two heat conduction copper clad plate directions be of a size of rib high, taking the line of the rib cross section hypotenuse mid point of vertical fluid flow direction as rib thick, rib is long by determining with substrate liquid cooling channel principle equal in length; At fluid intake place, described fin rib is thick to be selected in 1/25 to 1/25 scope of rib height; At fluid outlet, rib is thick to be selected in 1/20 to 1/10 scope of rib height; Lei Houwei exit, porch rib thick 50% to 75%.
The present invention is for alleviating existing aforementioned two technical problems of rectangle microchannel, improve power electronic device Distribution of temperature rise uniformity, reduce the possibility that minim channel blocks, based on thermal conduction study general principle, designed one and might as well be referred to as " double trapezoid cross section fin array " structure, this fin array has formed the structure of " double trapezoid cross-sectional passage array ".
Improve heat convection efficiency, must catch two basic points.One, must derive heat from thermal source fast; Its two, must derive heat be delivered to fast in fluid.The former, not only require the good heat conductivity of material, and require this Heat Conduction Material will have enough volumes, quality; The latter, not only requires the performance of fluid itself will be suitable for heat convection, and requires between fluid and solid, to have enough contacts area, enough relative velocities.
For electronic power integrated module minim channel liquid cooling base, if adopt rectangle fin, rectangularl runner, along with the carrying out of Convective Heat Transfer, for each fin, more depart from cavity upper wall or lower wall, approach the central cross-section of housing depth direction, its heat conduction amount of bearing is less, objectively no longer needs the Heat Conduction Material many like that with fin bottom.Reduce the use amount of Heat Conduction Material, just mean and reduced fluid through the caused pressure loss of liquid cooling base.For this reason, electronic power integrated module minim channel liquid cooling base of the present invention does not adopt the rectangle fin described in many documents, looks as trapezoidal fin along fluid flow direction then adopt.That is the present invention designs one of fin feature and is: suppose to do arbitrary cross section perpendicular to deposited copper ceramic wafer and fluid flow direction, gained fin cross section is isosceles trapezoidal structure.
For electronic power integrated module minim channel liquid cooling base, because the temperature rise to be arranged in the power electronic device that approaches fluid issuing position characterizes substrate heat dispersion, the temperature rise that is arranged in the power electronic device that approaches entrance area exists larger, unnecessary allows nargin, objectively allows to reduce the fin material usage that approaches fluid intake place.Reduce fin material usage, meaning can increase runner effective area, reduces the pressure loss, reduces the possibility that conduit blocks.More approach fluid intake, allow fin material usage fewer.For this reason, the present invention designs two of fin feature and is: suppose to be parallel to deposited copper ceramic wafer and do arbitrary cross section, gained fin cross section is isosceles trapezoidal structure.
By above-mentioned design, in process fluid flow, vertical fluid flow direction is appointed and is made cross section, and in short transverse, centre flow area is larger, and this is conducive to reduce the substrate pressure loss; More approach fluid issuing, runner is narrower, flow velocity is higher, and convection transfer rate is also just higher, and this can make up the fluid temperature (F.T.) negative effect bringing that raises, and is conducive to improve the temperature homogeneity of the power electronic device at diverse location place on liquid cooling base; Meanwhile, due to streamwise, runner is more and more narrow, flow velocity is more and more higher, can form longitudinal whirlpool at the left and right wall of fin, is conducive to the raising of convection transfer rate; Owing to more approaching fluid intake, passage is wider, once block, can be temporarily that fluid flow direction is reverse, flush fluid passage.Now, fluid is from slot inflow, wide mouthful of outflow, and developing result is better.Also can be in substrate use procedure, according to specific needs, timing controlled fluid oppositely flows in short-term, flush fluid passage.
Wire-cut Electrical Discharge Machining, spark-erosion sinking processing are to utilize the pulse feature sparkover between tool-electrode and piece pole to produce high temperature, workpiece material fusing and vaporization are processed, it is advantageous that and in processing, there is no macroscopical active force, and electric conducting material that can processing high-hardness, processing yardstick can be as small as 30 microns, machining accuracy is high, surface roughness can reach micron order, and it does not need three dimensional mask version.Above-mentioned minim channel structural design can be applicable to selecting fine electric spark wire cutting method to process; Also can first make shaped electrode with electric spark wire cutting method, then process with electric spark manufacturing process.
The beneficial effect of the present invention compared with rectangle minim channel is: when the equal pressure loss, heat exchange efficiency is high; When equal heat exchange efficiency, the pressure loss is little; Device temperature good uniformity under equal power consumption; Be difficult for blocking; Rinse than being easier to even if block also; Simple in structure, fin is not yielding, good stability; Can not cause the obvious increase of cost.
Brief description of the drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is to make arbitrary cross section perpendicular to deposited copper ceramic wafer and fluid flow direction, the cross section of the single fin of gained;
Fig. 2 a is for doing arbitrary cross section, the cross section of the single fin of gained to be parallel to deposited copper ceramic wafer;
Fig. 2 b is the end view of single fin;
Fig. 3 is to do arbitrary cross section perpendicular to deposited copper ceramic wafer and fluid flow direction, fin plate portion fin cross section under gained;
Fig. 3 a is for doing arbitrary cross section, fin plate portion fin cross section under gained to be parallel to deposited copper ceramic wafer and fluid flow direction;
Fig. 3 b is the end view of lower fin plate portion fin;
After Fig. 4 is upper fin plate, lower fin plate, Zuo Bi, the synthetic fluid passage of right wall, the master of part fin looks schematic diagram;
Fig. 4 a is the schematic top plan view of Fig. 4;
Fig. 4 b is the schematic side view of Fig. 4.
Wherein, 1. power electronic device group, 2. microelectronic component group, 3. outer copper-clad, 4. interior copper-clad, 5. heat conductive insulating layer, 6. cavity, 7. minim channel, 8. fin, 9. fill area.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention will be further described.
In Fig. 1, the minim channel liquid cooling base of electronic power integrated module of the present invention is sandwich structure, and it has two heat conductive insulating layers 5, and described two heat conductive insulating layer 5 upper and lower sides have respectively outer copper-clad 3 and interior copper-clad 4, and heat conductive insulating layer 5 is ceramic wafer.Heat conductive insulating layer 5 is referred to as and is applied copper ceramic wafer with its interior copper-clad 4, outer copper-clad 3, is called for short DBC.
Between two deposited copper ceramic wafer DBC, comprise the forward and backward both ends open being formed by Heat Conduction Material, the cavity 6 of upper and lower, left and right wall sealing.Cavity 6 is as the flow channel of cooling liquid, and it comprises the fin array with special construction that fin 8 forms, this fin array in cavity 6, formed formed by numerous minim channels 7 there is special construction channel array.The outer copper-clad 3 of two deposited copper ceramic wafer DBC forms the required multiple electronic devices of electronic power integrated module for welding.But in the time arranging these electronic devices, treat the microelectronic component that drives, protects, measures, controls for the power electronic device of energy control with to power electronic device with a certain discrimination, because the power consumption of the two has essential distinction.Power electronic device power consumption is high, and microelectronic component is low in energy consumption.With respect to power electronic device, the power consumption of microelectronic component is almost negligible.On the outer copper-clad 3 of two blocks of DBC plates, along fluid flow direction centralized arrangement power electronic device group 1, microelectronic component group 2 is arranged in to the one or both sides of corresponding power electronic device simultaneously.The power electronic device group 1 who is concentrated arranged at upper DBC plate and the shared copper-clad of the power electronic device group 1 region geometric position symmetry being in vertical direction concentrated arranged at lower DBC plate.Only between the shared region of upper and lower power electronic device group 1, arrange liquid cooling channel, i.e. cavity 6.So, can, under the identical prerequisite of fluid passageway width, fluid path length be dwindled to approximately 50%.Accordingly, the pressure loss of passage has also reduced approximately 50%.Fill area 9 between microelectronic component group 2 can utilize Heat Conduction Material or non-Heat Conduction Material to fill.Fluid is the power electronic device group 1 of cooling high power consumption directly, the microelectronic component group 2 of the indirect cooling low-power consumption of conduction of heat by DBC.
Comprehensive above-mentioned two features, designed single fin 8 schematic diagrames of the present invention are as shown in accompanying drawing 2, Fig. 2 a, Fig. 2 b.
The fin array with double trapezoid cross section of electronic power integrated module minim channel liquid cooling base of the present invention, as shown in accompanying drawing 3, Fig. 3 a, Fig. 3 b.3, accompanying drawing shows and is arranged in cavity 6 lower walls in accompanying drawing 1, part fin 8 for cooling lower DBC plate.In fact, on the upper and lower wall of accompanying drawing 1 cavity 6, be all distributed with the fin 8 shown in several accompanying drawings 2, and it is identical to be arranged in fin 8 geometries, geometric parameter, the fin quantity of upper and lower wall, the upper and lower wall of cavity 6, together with fin disposed thereon 8, forms upper and lower symmetrical structure.Spacing between each fin 8 forms fluid passage.
All fins 8 height, length are identical; Approach outlet, fin 8 is thicker.Passage upper wall, lower wall and corresponding interior copper-clad 3 are welded as a whole.Each fin 8 positions toward each other, but leave gap between its end, and the height h of each fin 8 is slightly less than 50% of channel height.
Taking fin 8 middle part, the trapezoid cross section thickness perpendicular to DBC plate as rib thick, fluid intake place rib is thick selects in 1/25 to 1/15 scope of rib height; Exit rib is thick to be selected in 1/20 to 1/10 scope of rib height.Lei Houwei exit, porch rib thick 50% to 75%.
The specific embodiment obtaining by above-mentioned execution mode is:
The shared region geometry size of power electronic device group 1 and microelectronic component group 2 is all 10mm × 100mm, and corresponding base plan is of a size of 20mm × 100mm; DBC plate covers copper layer thickness 0.2mm, covers copper layer solder thickness 0.1mm, DBC plate Al
2o
3heat conductive insulating layer thickness is 0.4mm, and fin plate bottom thickness is 0.3mm, and the weld layer thickness that DBC covers between copper layer and fin plate is 0.1mm, minim channel height is 2.8mm, width is 10mm, accounts for the half of substrate 20mm width, its second half microelectronic component is set.The whole contour substrate forming is of a size of 20mm × 100mm × 5.6mm.Upper and lower fin plate symmetry, respectively arranges 49 fins 8, and each fin 8 is identical.Each fin 8 is 100mm along fluid flow direction length; Fin is isosceles trapezoid on the cross section of vertical fluid flow direction that is the cross section parallel with fluid intake, and trapezoidal height is 1.35mm, and these trapezoidal two ends, porch are respectively 0.09mm, 0.07mm, and these trapezoidal two ends, exit are respectively 0.12mm, 0.1mm; It is the microchannel of two-sided isosceles trapezoid equally that above-mentioned 49 two-sided ladder-shaped fins 8 form respectively 50 at upper and lower two fin plates, every the long 100mm of conduit, high 1.35mm, two ends of porch conduit, are respectively 0.11mm, 0.13mm, and two ends of exit conduit are respectively 0.08mm, 0.1mm.The each fin 8 of upper wall does not contact with the each fin 8 of lower wall, has the gap of 0.1mm between fin 8 tops, and beneficial effect will be brought into play in this gap in the time that conduit blocks and is not able to do in time back flush.Fluid passage Zuo Bi, right wall thickness are 0.5mm.Result of the test shows, the even power consumption of upper and lower each 900W in power electronic device region, the even power consumption of the upper and lower each 10W in microelectronics region, when 40 DEG C of cooling fluid flow 0.02L/s, inlet temperature, outlet temperature is 51.5 DEG C, power electronic device mean temperature is that 137 DEG C, minimum temperature are that 135 DEG C, maximum temperature are 142.5 DEG C, and 66.3 DEG C of microelectronic component mean temperatures, minimum temperature are 70.5 DEG C of 65.5 DEG C, maximum temperature; Entrance, outlet pressure reduction are 23KPa.
A contrast test corresponding with above-mentioned specific embodiment be, only changes fin shape, changes above-mentioned double trapezoid cross section fin into rectangle fin.In above-mentioned double trapezoid cross section, fin length direction point midway vertical fluid flow direction is done cross section, this isosceles trapezoid cross section waist thickness is 0.095mm, getting its approximation 0.1mm is rectangle fin thickness, rectangular fin sheet length, highly, quantity etc. is all consistent with above-mentioned double trapezoid cross section fin, forms rectangularl runner substrate.Comparative test result is: power electronic device mean temperature is that 139 DEG C, 109 DEG C of minimum temperatures, maximum temperature are 151 DEG C, and 71.5 DEG C of microelectronic component mean body temperatures, minimum temperature are 80.5 DEG C of 60 DEG C, high fever, and entrance, outlet pressure reduction are 22KPa.
Contrast above-mentioned result of the test, double trapezoid cross section fin is particularly all better than rectangle fin aspect device temperature rise uniformity at heat transfer effect, and same coolant flow downforce loss is without obviously increasing.When with the highest device temperature rise calibration substrate performance, double trapezoid cross section fin is obviously better than rectangle fin.And double trapezoid cross section fin, compared with rectangle fin, is difficult for stopping up, even be also convenient to back flush after stopping up.
Claims (3)
1. the electronic power integrated module minim channel liquid cooling base containing double trapezoid cross section fin, it comprises all heat conductive insulating plate, the liquid cooling channel being clipped in the middle by these two blocks of heat conductive insulating plates and Heat Conduction Material or non-Heat Conduction Material fill areas of deposited copper of two upper and lower sides, it is characterized in that, described liquid cooling channel is the cavity with double trapezoid cross section fin array, and the gap between fin forms minim channel; The heat conductive insulating plate region corresponding with described liquid cooling channel, centralized arrangement power electronic device group; At power electronic device group's adjacent area, that is the corresponding heat conductive insulating plate of described Heat Conduction Material or non-Heat Conduction Material fill area region, centralized arrangement microelectronic component group;
Described cavity forms upper and lower, left and right wall by Heat Conduction Material, form closed channel, be arranged symmetrically with double trapezoid cross section fin array at upper wall, the lower wall of this passage, in the time intercepting described fin with the cross section that is parallel to two heat conduction copper clad plates, gained fin cross section is isosceles trapezoid; When intercepting described fin perpendicular to the cross section of fluid flow direction, gained fin cross section is isosceles trapezoid; When intercepting described fin perpendicular to two heat conduction copper clad plates and the cross section that is parallel to fluid flow direction, gained fin cross section is rectangle.
2. the electronic power integrated module minim channel liquid cooling base containing double trapezoid cross section fin as claimed in claim 1, it is characterized in that, described cavity upper wall and lower wall are welded as a whole with the interior copper-clad of upper heat conductive insulating plate, lower heat conductive insulating plate respectively, fin is arranged on corresponding upper wall and lower wall, self is relative in the upper end of the lower end of upper wall fin and lower wall fin, but leaves each other gap.
3. the electronic power integrated module minim channel liquid cooling base containing double trapezoid cross section fin as claimed in claim 2, it is characterized in that, described fin fluid flow direction be of a size of rib long, be of a size of with heat conduction copper clad plate vertical direction that rib is high, the line of the rib cross section hypotenuse mid point of vertical fluid flow direction is that rib is thick; Rib length equals substrate liquid cooling channel length; Described fin is selected in thick 1/25 to 1/15 scope at rib height of fluid intake place rib, and exit rib is thick to be selected in 1/20 to 1/10 scope of rib height; Lei Houwei exit, porch rib thick 50% to 75%.
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| CN104768356B (en) * | 2015-04-27 | 2017-06-06 | 中国电子科技集团公司第三十八研究所 | A kind of water cooling hardened structure of application 3D printing technique |
| US9781867B2 (en) * | 2016-02-19 | 2017-10-03 | Ford Global Technologies, Llc | Power module assembly for a vehicle power inverter |
| CN106061199B (en) * | 2016-06-13 | 2018-09-28 | 东南大学 | A kind of small type heat exchanger of flow boiling |
| CN109346444B (en) * | 2018-08-29 | 2020-05-05 | 杭州电子科技大学 | Micro radiator with trapezoidal ridge rib array |
| CN114245583B (en) * | 2021-12-17 | 2023-04-11 | 华进半导体封装先导技术研发中心有限公司 | Flow channel structure for chip cooling and manufacturing method thereof |
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| CN201655785U (en) * | 2010-04-15 | 2010-11-24 | 华中科技大学 | Micro-channel heat sink for electronic packaging device |
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