CN108111128A - A kind of manufacture craft of 60 watts of miniaturization power amplifiers of Ku wave bands - Google Patents
A kind of manufacture craft of 60 watts of miniaturization power amplifiers of Ku wave bands Download PDFInfo
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- CN108111128A CN108111128A CN201711360283.0A CN201711360283A CN108111128A CN 108111128 A CN108111128 A CN 108111128A CN 201711360283 A CN201711360283 A CN 201711360283A CN 108111128 A CN108111128 A CN 108111128A
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- power amplifier
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000005245 sintering Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000012360 testing method Methods 0.000 claims abstract description 8
- 238000010330 laser marking Methods 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims abstract description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 32
- 238000004140 cleaning Methods 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 12
- 229920000742 Cotton Polymers 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
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- 210000000707 wrist Anatomy 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010068 moulding (rubber) Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000006071 cream Substances 0.000 claims 1
- 238000012797 qualification Methods 0.000 abstract description 5
- 238000002474 experimental method Methods 0.000 abstract description 4
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- 238000012216 screening Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 10
- 238000004891 communication Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 3
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- 230000005540 biological transmission Effects 0.000 description 2
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- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
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- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microwave Amplifiers (AREA)
Abstract
The present invention is suitable for microwave power amplifier technology field, provides a kind of manufacture craft of 60 watts of miniaturization power amplifiers of Ku wave bands, includes the following steps：Method includes the following steps：S1, RT/duroid6035HTC microwave circuit boards are sintered on cavity；S2, resistance and capacitance component are sintered on the RT/duroid6035HTC microwave circuit boards；S3, amplifier is sintered on cavity；S4, cavity body filter is sintered on cavity；S5, the component that sintering is completed is debugged, is tested；S6, test passes carry out cover board encapsulation, laser marking.Technological process strong operability, 60 watts of miniaturization power amplifier modules of Ku wave bands by this technique productions pass through stringent test, screening experiment and modular debugging, module requirement is fully achieved in every technical performance index, the product qualification rate of production is high, improves production efficiency and has saved production cost.
Description
Technical field
The invention belongs to environmental monitoring technology fields, provide a kind of making of 60 watts of miniaturization power amplifiers of Ku wave bands
Technique.
Background technology
60 watts of miniaturization power amplifier modules of Ku wave bands are widely used in satellite communication system, are applied especially to satellite
In the amplification of communication system uplink signal.60 watts of power amplifier modules of Ku wave bands can enhance the transmitting work(for having satellite communication system
Rate and transmission power improve the effective propagation distance of communication of satellite, expand the coverage of satellite communication system, improve satellite and lead to
Believe system communication quality.Measuring apparatus increases transmission power with 60 watts of miniaturization power amplifier modules of Ku wave bands；Active
In phased-array radar, 60 watts of miniaturization power amplifier modules of Ku wave bands are the important composition units of TR components.
It is badly in need of a kind of manufacture craft of 60 watts of miniaturization power amplifiers of Ku wave bands easy to operate, qualification rate is high at present.
The content of the invention
The present invention provides a kind of manufacture craft of 60 watts of miniaturization power amplifiers of Ku wave bands, it is desirable to provide a kind of flow behaviour
The property made is strong, the manufacture craft of the high 60 watts of miniaturization power amplifiers of Ku wave bands of product qualification rate.
The present invention is achieved in that the manufacture craft of 60 watts of miniaturization power amplifiers of Ku wave bands, the manufacture craft
Include the following steps：
S1, RT/duroid6035HTC microwave circuit boards are sintered on cavity；
S2, resistance and capacitance component are sintered on the RT/duroid6035HTC microwave circuit boards；
S3, amplifier is sintered on cavity；
S4, cavity body filter is sintered on cavity；
S5, the component that sintering is completed is debugged, is tested；
S6, test passes carry out cover board encapsulation, laser marking.
Further, include before the step S1：
S7, cavity, cover board, RT/duroid6035HTC microwave circuit boards are carried out to gas phase cleaning, the gas phase cleaning bag
Include following steps：
S71, using gas phase cleaning machine by cavity, cover board, it is clear that RT/duroid6035HTC microwave circuit boards are placed on gas phase
Hot brew (4~6) minute in the rinse bath of washing machine；
After the completion of S72, hot brew, cavity, cover board and RT/duroid6035HTC microwave circuit boards are taken out, is put into and fills
It is scrubbed in the culture dish of 50 DEG C of acetone；
S73, the baking oven that cavity, cover board, the RT/duroid6035HTC microwave circuit boards after scrub are placed on to 60 DEG C again
It is interior baking (4~6) minute, for use after naturally cooling to 20 DEG C~25 DEG C afterwards.
Further, the step S1 specifically comprises the following steps：
Step S1 specifically comprises the following steps：
S11, RT/duroid6035HTC microwave circuit boards are placed on the correspondence position of cavity；
S12, copper briquetting is added on RT/duroid6035HTC microwave circuit boards；
S13, the cavity for placing microwave circuit is placed on 255 DEG C~265 DEG C of heating platform and carries out burn-back；
S14, the cavity for sintering microwave circuit from heating platform is removed, is placed on filter paper and is cooled down, is cooled to
Copper briquetting is removed after room temperature；
S15, cleaned with the acetone cotton for being soaked with pure acetone and sintering position is cleaned.
Further, the step S2 specifically comprises the following steps：
S21, using the continuity point rubber moulding formula of dispenser on the pad of RT/duroid6035HTC microwave circuit boards spot printing
Solder(ing) paste；
S22, capacitance, resistance are placed in scribble accordingly on the pad of solder(ing) paste；
S23, the component that capacitance and resistance are placed in step S22 is placed on 225 DEG C~235 DEG C of heating platform carries out
Sintering, burned component from heating platform is removed, is placed on cooled to room temperature on filter paper；
S24, the alcohol swab for being soaked with absolute alcohol cleans sintering position.
Further, by the sintering process of step S23, when solder(ing) paste starts to melt, using microscope to position occurs
Put the capacitance of offset or tilting, resistance device sets right.
Further, the step S3 specifically comprises the following steps：
S31, antistatic wrist strap is put on；
S32, amplifier is placed in cavity correspondence position；
S33, power tube both ends pin is kept flat, and with RT/duroid6035HTC microwave circuit boards microstrip lines middle position
Contact；
S34, power tube bottom surface is fixed on cavity, the both ends pin of power tube is welded to RT/duroid6035HTC
On the middle position of microwave circuit boards microstrip line；
After the completion of S35, welding, solder joint is cleaned with the cotton for being soaked with pure acetone.
Further, the step S4 specifically comprises the following steps：
S41, antistatic wrist strap is put on；
S42, the correspondence position that cavity body filter is placed in cavity；
S43, isolator both ends pin is kept flat, and with RT/duroid6035HTC microwave circuit boards microstrip lines middle position
Contact；
S44, the bottom surface of cavity body filter is fixed on cavity, cavity body filter both ends pin is welded to RT/
On the middle position of duroid6035HTC microwave circuit boards microstrip lines；
After the completion of S45, welding, solder joint is cleaned with the acetone cotton for being soaked with pure acetone.
Further, if the bottom of the power tube is hanging, in the thin indium sheet of overhead positions cushioning of power amplifier bottom of the tube；If institute
State that the bottom of isolator is hanging, the thin indium sheet of overhead positions cushioning in isolator bottom.
Further, after step s 7, include before step S1
S8, the cavity that weld tabs is fixed on to power amplifier, specifically comprise the following steps：
S81, weld tabs is cut into consistent with RT/duroid6035HTC microwave circuit board sizes, weld tabs is fixed on cleaning
Power amplifier cavity bottom afterwards；
S82, weld tabs is flattened with idler wheel；
S83, correspondence position of the chip hole of RT/duroid6035HTC microwave circuit boards on weld tabs is cut off, and
The size of excision is consistent with the size of chip hole.
The manufacture craft of 60 watts of miniaturization power amplifier modules of Ku wave bands provided in an embodiment of the present invention, technological process behaviour
The property made is strong, and 60 watts of miniaturization power amplifier modules of Ku wave bands by this technique productions are by stringent test, screening experiment
And module requirement is fully achieved in modular debugging, every technical performance index, the product qualification rate of production is high, improves production effect
Rate and production cost is saved, and realized the multiple batches of supply of material of high-volume.
Description of the drawings
Fig. 1 is the flow chart of the manufacture craft of 60 watts of power amplifiers of Ku wave bands provided in an embodiment of the present invention；
Fig. 2 is cavity schematic diagram provided in an embodiment of the present invention；
Fig. 3 is cover plate schematic diagram provided in an embodiment of the present invention；
Fig. 4 is that the RT/duroid6035HTC microwave circuit boards of power amplifier module provided in an embodiment of the present invention are sintered
Schematic diagram；
Fig. 5 is that the resistance of power amplifier module provided in an embodiment of the present invention and capacitance are sintered schematic diagram；
Fig. 6 is that the amplifier of power amplifier module provided in an embodiment of the present invention is sintered schematic diagram；
Fig. 7 is the cavity body filter scheme of installation of power amplifier module provided in an embodiment of the present invention；
Fig. 8 is the laser marking schematic diagram of power amplifier module provided in an embodiment of the present invention.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Fig. 1 be 60 watts of power amplifiers of Ku wave bands provided in an embodiment of the present invention manufacture craft flow chart, this method
Include the following steps:
Cavity mentioned in the embodiment of the present invention is power amplifier module cavity, structure diagram such as Fig. 2 institutes
Show, cover board is power amplifier module cover board, and structure diagram is as shown in Figure 3；
S1, RT/duroid6035HTC microwave circuit boards are sintered on cavity；
In embodiments of the present invention, step S1 specifically comprises the following steps：
S11, RT/duroid6035HTC microwave circuit boards are placed on the correspondence position of power amplifier cavity, RT/
The label 1 to 7 into 7 sintered location of RT/duroid6035HTC microwave circuit boards such as Fig. 4 of duroid6035HTC microwave circuit boards 1
It is shown；
S12, pressurize copper briquetting on RT/duroid6035HTC microwave circuit boards, to ensure penetration rate and preventing from welding
RT/duroid6035HTC microwave circuit boards shift in journey, warp phenomenon, and sintering is caused to fail；
S13, the component that RT/duroid6035HTC microwave circuit boards are placed in step S12 is placed on 255 DEG C~265 DEG C
Heating platform on be sintered, in sintering process, when solder(ing) paste is started to melt, suitable pine is added in injector for medical purpose
Perfume makes sintering connect more fully.
S14, the component sintered from heating platform is removed, is placed on filter paper and is cooled down, taken after being cooled to room temperature
Lower copper briquetting.
S15, with wide mouth tweezers gripping be soaked with pure acetone acetone cotton clean to be sintered position clean, by sintering process
In remaining rosin and other spots clean up after it is for use.
S2, resistance and capacitance component are sintered on RT/duroid6035HTC microwave circuit boards；
In embodiments of the present invention, step S2 specifically comprises the following steps：
S21, using the continuity point rubber moulding formula of dispenser on the pad of RT/duroid6035HTC microwave circuit boards spot printing
Solder(ing) paste, dispenser pressure are arranged to (100~120) psi, and scolding tin paste composition is SN63CR32,179 DEG C of fusing point.
S22, capacitance, resistance are placed in scribble accordingly on the pad of solder(ing) paste, resistance device R13-R16, capacitor
Part C4-C13 riding positions are as shown in Fig. 5 power amplifier resistances container piece sintering schematic diagram.
S23, the component that capacitance and resistance are placed in step S22 is placed on 225 DEG C~235 DEG C of heating platform carries out
Burn-back removes burned component from heating platform, is placed on cooled to room temperature on filter paper；
In embodiments of the present invention, in step in the sintering process of S23, when solder(ing) paste starts to melt, using microscope
It sets right to the capacitance and resistance device that position offset or tilting occurs.
S24, it is soaked with the alcohol swab of absolute alcohol with the gripping of wide mouth tweezers sintering position is cleaned, it will be residual in sintering process
The rosin and other spots stayed is for use after cleaning up, and the component solder joint after cleaning should be mellow and full.
S3, amplifier is sintered on cavity；
In embodiments of the present invention, step S3 specifically comprises the following steps：
S31, antistatic wrist strap is put on；
S32, amplifier is placed on cavity correspondence position；
U1, U2, U3 and U4 in such as figure, U1 TIM1414-5-25, U2 FLM1314-18F, U3 and U4 are
FLM1314-30F；
S33, power tube both ends pin is kept flat, and with RT/duroid6035HTC microwave circuit boards microstrip lines middle position
Contact, if power amplifier bottom of the tube is hanging, the thin indium sheet on power amplifier bottom of the tube cushioning, power tube riding position such as Fig. 6 power amplifiers
Shown in the amplifier sintering schematic diagram of module；
S34, power tube bottom surface is fixed on cavity, the both ends pin of power tube is welded in circuit boards microstrip line
It entreats on position；
In embodiments of the present invention, using the cheese head screw of M2*4 plus bullet circle and gasket, with screwdriver by power tube into
Row is fixed, and the both ends pin of power tube is welded by 179 DEG C of welding wire.
After the completion of S35, welding, solder joint is cleaned with the cotton for being soaked with pure acetone.
S4, will be on cavity body filter knot to cavity；
In embodiments of the present invention, step S4 is specifically included：
S41, antistatic wrist strap is put on
S42, the correspondence position that cavity body filter is placed in cavity, position such as Fig. 3 power amplifiers of cavity body filter
Shown in F1 in the cavity body filter scheme of installation of module；
S43, isolator both ends pin is kept flat, and with RT/duroid6035HTC microwave circuit boards microstrip lines middle position
Contact, if isolator bottom is hanging, the thin indium sheet on the cushioning of isolator bottom, isolator riding position such as Fig. 7 power amplifiers
Shown in the cavity body filter scheme of installation of module.
S44, the bottom surface of cavity body filter is fixed on cavity, cavity body filter both ends pin is welded to RT/
On the middle position of duroid6035HTC microwave circuit boards microstrip lines；With screwdriver by the cheese head screw of M2*12 plus bullet circle and
Cavity body filter is fixed on cavity by gasket.
After the completion of S45, welding, solder joint is cleaned with the acetone cotton for being soaked with pure acetone.
S5, the component that sintering is completed is debugged, is tested；
In embodiments of the present invention, step S5 is specifically included：
S51, insulator is installed on cavity, and radio-frequency module and cavity module is welded together with lead.
S52, connect peripheral circuit and access corresponding instrument and meter, debugged and tested.
S6, test passes carry out encapsulation, the laser marking of cover board.
The concrete operation step of laser marking is：
S61, successively open equipment general supply (MAINPOWER), water pump (COOLER), He-Ne (HENE), laser (LAMP),
Computer (COMPUTER), scanning (SCANNER), laser startup/shutdown switch, acousto-optic power switch.
S62, treat that cooling-water machine temperature reaches 15 DEG C~20 DEG C of design temperature, operation software kit QLMARKING8.0；Soft
Part main interface clicks on " file " → " opening ", finds the icon file (mark content below figure 8) editted, clicks on and determines, carries
Enter icon, icon is selected to carry out mark click " feux rouges ", will be placed on from module at objective table feux rouges positioning, and cover on it
One piece of experiment sheet metal, selects arbitrary line inscribed in figure, clicks on white box before " Continuous maching " and " selection processing ", occurs
Black small arrow；
S63, click " marking ", while shake table handle and adjust height of table, until marking laser is adjusted to it
Focus point (the most sharp height point of sound)；It clicks on and cancels selection " Continuous maching " and " selection processing "；It clicks on " feux rouges ", will come from
Module rectify be placed in feux rouges mark position, adjust current knob to " 7.4 ", adjust laser frequency to 2.445KHz, point
It hits cancellation feux rouges and point " marking ", equipment starts mark process；After treating a module mark, it will remove and be put into from component
It is properly preserved in antistatic box, repeats the 6th step, compare the number figure of mark on component, mark carries out mark to remaining component successively；
After hours, electric current is first adjusted to 0, shut down computer from screen, and closing acousto-optic power switch, laser start/stops successively
It only switchs, scan (SCANNER), laser (LAMP), water pump (COOLER), He-Ne (HENE), computer (COMPUTER), equipment
General supply (MAINPOWER)；Mark is completed, mark content is with reference to Fig. 7.
In embodiments of the present invention, further included before step S1：
S7, cavity, cavity cover board, RT/duroid6035HTC microwave circuit boards are carried out to gas phase cleaning, gas phase cleaning
It is specific as follows：
S71, using vapour phase cleaning machine by cavity, cover board, it is clear that RT/duroid6035HTC microwave circuit boards are placed on vapour phase
Hot brew (4~6) minute, the model SBU250SC of gas phase cleaning machine in the rinse bath of washing machine；
S72, after hot brew is completed, cavity, cover board and RT/duroid6035HTC microwave circuit boards is taken out, are put into
It fills and is scrubbed in the culture dish of 50 DEG C of acetone, scrubbed with fur brush；
S73, the baking oven that cavity, cover board, the RT/duroid6035HTC microwave circuit boards after scrub are placed on to 60 DEG C again
It is interior baking (4~6) minute, for use after naturally cooling to 20 DEG C~25 DEG C afterwards.
In embodiments of the present invention, further included before step S1：
S8, the cavity that welding plate is fixed on to power amplifier, specifically comprise the following steps：
S81, weld tabs is cut into consistent with RT/duroid6035HTC microwave circuit board sizes, weld tabs is fixed on cleaning
Power amplifier cavity bottom afterwards；
In embodiments of the present invention, weld tabs is using 217 DEG C of weld tabs, thickness 0.05mm, using operation to progress phase
The cutting operation of pass.
S82, weld tabs is flattened with idler wheel；
S83, correspondence position of the chip hole of RT/duroid6035HTC microwave circuit boards on weld tabs is cut off, and
The size of excision is consistent with the size of chip hole.
In embodiments of the present invention, specifically included in step S6：After the completion of debugging, test, cover board is fixed on screw
On cavity, laser marking is carried out afterwards,
The manufacture craft of 60 watts of miniaturization power amplifier modules of Ku wave bands provided in an embodiment of the present invention, technological process behaviour
The property made is strong, and 60 watts of miniaturization power amplifier modules of Ku wave bands by this technique productions are by stringent test, screening experiment
And module requirement is fully achieved in modular debugging, every technical performance index, the product qualification rate of production is high, improves production effect
Rate and production cost is saved, and realized the multiple batches of supply of material of high-volume.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of production method of 60 watts of miniaturization power amplifier modules of Ku wave bands, which is characterized in that the described method includes such as
Lower step：
S1, RT/duroid6035HTC microwave circuit boards are sintered on cavity；
S2, resistance and capacitance component are sintered on the RT/duroid6035HTC microwave circuit boards；
S3, amplifier is sintered on cavity；
S4, cavity body filter is sintered on cavity；
S5, the component that sintering is completed is debugged, is tested；
S6, test passes carry out cover board encapsulation, laser marking.
2. the production method of 60 watts of miniaturization power amplifier modules of Ku wave bands as described in claim 1, which is characterized in that institute
Include before stating step S1：
S7, cavity, cover board, RT/duroid6035HTC microwave circuit boards are carried out to gas phase cleaning, the gas phase cleaning is included such as
Lower step：
S71, using gas phase cleaning machine by cavity, cover board, RT/duroid6035HTC microwave circuit boards are placed on gas phase cleaning machine
Rinse bath in hot brew 4~6 minutes；
After the completion of S72, hot brew, cavity, cover board and RT/duroid6035HTC microwave circuit boards are taken out, is put into and fills 50 DEG C
It is scrubbed in the culture dish of acetone；
S73, cavity, cover board, the RT/duroid6035HTC microwave circuit boards after scrub are put toast 4 in 60 DEG C of baking oven again
It is~6 minutes, for use after naturally cooling to 20 DEG C~25 DEG C afterwards.
3. the production method of 60 watts of miniaturization power amplifier modules of Ku wave bands as described in claim 1, which is characterized in that institute
Step S1 is stated to specifically comprise the following steps：
Step S1 specifically comprises the following steps：
S11, RT/duroid6035HTC microwave circuit boards are placed on the correspondence position of cavity；
S12, copper briquetting is added on RT/duroid6035HTC microwave circuit boards；
S13, the cavity for placing microwave circuit is placed on 255 DEG C~265 DEG C of heating platform and carries out burn-back；
S14, the cavity for sintering microwave circuit from heating platform is removed, is placed on filter paper and is cooled down, is cooled to room temperature
After remove copper briquetting；
S15, cleaned with the acetone cotton for being soaked with pure acetone and sintering position is cleaned.
4. the production method of 60 watts of miniaturization power amplifier modules of Ku wave bands as described in claim 1, which is characterized in that institute
Step S2 is stated to specifically comprise the following steps：
S21, using the continuity point rubber moulding formula of dispenser on the pad of RT/duroid6035HTC microwave circuit boards spot printing scolding tin
Cream；
S22, capacitance, resistance are placed in scribble accordingly on the pad of solder(ing) paste；
S23, the component that capacitance and resistance are placed in step S22 is placed on 225 DEG C~235 DEG C of heating platform and is burnt
Knot, burned component from heating platform is removed, is placed on cooled to room temperature on filter paper；
S24, the alcohol swab for being soaked with absolute alcohol cleans sintering position.
5. the production method of 60 watts of miniaturization power amplifier modules of Ku wave bands as claimed in claim 4, which is characterized in that
By in the sintering process of step S23, when solder(ing) paste starts to melt, using microscope to occur position offset or tilting capacitance,
Resistance device sets right.
6. the production method of 60 watts of miniaturization power amplifier modules of Ku wave bands as described in claim 1, which is characterized in that institute
Step S3 is stated to specifically comprise the following steps：
S31, antistatic wrist strap is put on；
S32, amplifier is placed in cavity correspondence position；
S33, power tube both ends pin is kept flat and is contacted with RT/duroid6035HTC microwave circuit boards microstrip lines middle position；
S34, power tube bottom surface is fixed on cavity, the both ends pin of power tube is welded to RT/duroid6035HTC microwaves
On the middle position of circuit boards microstrip line；
After the completion of S35, welding, solder joint is cleaned with the cotton for being soaked with pure acetone.
7. the production method of 60 watts of miniaturization power amplifier modules of Ku wave bands as described in claim 1, which is characterized in that institute
Step S4 is stated to specifically comprise the following steps：
S41, antistatic wrist strap is put on；
S42, the correspondence position that cavity body filter is placed in cavity；
S43, isolator both ends pin is kept flat and is contacted with RT/duroid6035HTC microwave circuit boards microstrip lines middle position；
S44, the bottom surface of cavity body filter is fixed on cavity, cavity body filter both ends pin is welded to RT/
On the middle position of duroid6035HTC microwave circuit boards microstrip lines；
After the completion of S45, welding, solder joint is cleaned with the acetone cotton for being soaked with pure acetone.
8. the production method of 60 watts of miniaturization power amplifier modules of Ku wave bands as claimed in claims 6 or 7, feature exist
In if the bottom of the power tube is hanging, in the thin indium sheet of overhead positions cushioning of power amplifier bottom of the tube；If the bottom of the isolator
Vacantly, in the thin indium sheet of overhead positions cushioning of isolator bottom.
9. the production method of 60 watts of miniaturization power amplifier modules of Ku wave bands as described in claim 1, which is characterized in that
After step S7, include before step S1
S8, weld tabs is fixed on the cavity of power amplifier, that is, be placed between circuit board and cavity, position is on cavity
With such as Fig. 4, weld tabs main function is bonding circuit in cavity, is specifically comprised the following steps as circuit board：
S81, weld tabs is cut into it is consistent with RT/duroid6035HTC microwave circuit board sizes, by weld tabs be fixed on cleaning after
Power amplifier cavity bottom；
S82, weld tabs is flattened with idler wheel；
S83, correspondence position of the chip hole of RT/duroid6035HTC microwave circuit boards on weld tabs is cut off, and cut off
Size it is consistent with the size of chip hole.
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| CN109037087A (en) * | 2018-08-07 | 2018-12-18 | 航天恒星科技有限公司 | A kind of high penetration rate sintering method of the more gradients of millimeter wave transceiving assembly high-temperature |
| CN109347450A (en) * | 2018-09-13 | 2019-02-15 | 安徽华东光电技术研究所有限公司 | A kind of processing method of Asia 20 watts of pulse power amplifiers of terahertz wave band |
| CN109451678A (en) * | 2018-12-11 | 2019-03-08 | 安徽华东光电技术研究所有限公司 | A kind of production method of KU wave band 40W power amplifier module |
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